JPH03278409A - Laminated thin soft magnetic film - Google Patents
Laminated thin soft magnetic filmInfo
- Publication number
- JPH03278409A JPH03278409A JP20892290A JP20892290A JPH03278409A JP H03278409 A JPH03278409 A JP H03278409A JP 20892290 A JP20892290 A JP 20892290A JP 20892290 A JP20892290 A JP 20892290A JP H03278409 A JPH03278409 A JP H03278409A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- laminated
- transition metal
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 115
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 26
- 229910018125 Al-Si Inorganic materials 0.000 claims abstract description 7
- 229910018520 Al—Si Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 29
- 150000003624 transition metals Chemical class 0.000 claims description 29
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims description 23
- 229910000889 permalloy Inorganic materials 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910018523 Al—S Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 35
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 230000035699 permeability Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000011162 core material Substances 0.000 description 8
- 238000003475 lamination Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000017227 ADan amyloidosis Diseases 0.000 description 1
- 201000000194 ITM2B-related cerebral amyloid angiopathy 2 Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Abstract
Description
本発明は高密度磁気記録用磁気へ・ンドのコアに用いる
積層軟磁性薄膜に関する。The present invention relates to a laminated soft magnetic thin film used in the core of a magnetic head for high-density magnetic recording.
ビデオテープレコーダ、ディジタルオーデイオデ・ンキ
、フロ・ンビーディスクドライブｆＦＤＤ）ハードディ
スクドライブ（ＨＤＤ）のような磁気記録機器は年々記
録密度が向上しており、高密度記録に対応した磁気ヘッ
ドが求められている。高密度記録用の磁気ヘッドには、
従来より飽和磁束密度Ｂｓおよび実効透磁率μが高く、
抗磁力Ｈｃが低いコアが必要である。
これら磁気記録機器の磁気ヘッドには従来フェライトな
どの軟磁性コア材が用いられてきたが、軟磁性フェライ
トを用いた従来の磁気ヘッドでは高保磁力の媒体に対応
しきれないため、フェライトよりも飽和磁束音度が高い
Ｆｅ−Ａｌ−Ｓｉ系のセンダスト合金等が用いられるよ
うになった。
しかしＦｅ−Ａ１．−Ｓｉ系合金には電気抵抗が低いと
いう合金特有の一般的性質がある。このためＦｅ−Ａｌ
５１系合金のみで磁気回路をバルク状に構成した磁気ヘ
ッドに高密度記録に必要な高周波磁場を加えた場合、磁
場がコア内部へ充分浸透せずに表層に集中し、渦電流が
発生する。その結果磁束伝達が不充分となり実効透磁率
μが低下してしまう。
実効透磁率μの低下防止には渦電流を抑制することが必
要で、渦電流の回路を遮断するには、薄膜の磁性材料と
絶縁層とを交互に積層すれば良い。これは種々の変圧器
などに用いられている一般的な方法である。渦電流を有
効に遮断するには、各磁性薄膜層の厚さが高周波スキン
デプスδより薄いことが必要である。スキンデプスδは
、（ω＝角周波数、μ：透磁率、ρ＝電気抵抗）で表わ
されるため、より高い周波数に対応するには絶縁層間の
各磁性薄膜層の厚みを薄くすることが求められる。また
、ヘッドコア磁気回路としては、その磁気抵抗を抑える
ことが必要である。そのためには、ヘッドのトラック幅
で規制された総膜厚（コア全体の厚さ）に対する磁性層
が占める割合を大きくし、絶縁層を薄くしなければなら
ない。即ち、各磁性層をより薄くして積層し、積層回数
をより多くとることで高周波特性を改善することが可能
になる。
ところがＦｅ−Ａｌ−Ｓｉ系合金を、積層ヘッドに用い
られるセラミックス基板、結晶化ガラス基板や絶縁層に
用いるＳｉＯ□等の表面に成膜する場合、膜厚が３〜４
μｍ以上にならないと結晶配向が不充分で結晶粒が成長
せず、良好な磁気特性が得られないという問題がある。
Ｆｅ−Ａｌ−Ｓｉ系合金を３〜４ｕｍ以上にすると積層
回数が限られるため、高周波特性の改善は充分とは言え
ない。The recording density of magnetic recording devices such as video tape recorders, digital audio disc drives (FDDs), hard disk drives (HDDs) is increasing year by year, and magnetic heads that support high-density recording are required. ing. Magnetic heads for high-density recording include
The saturation magnetic flux density Bs and effective magnetic permeability μ are higher than before,
A core with low coercive force Hc is required. Soft magnetic core materials such as ferrite have traditionally been used in the magnetic heads of these magnetic recording devices, but conventional magnetic heads using soft magnetic ferrite cannot cope with high coercive force media, so they are more saturated than ferrite. Fe-Al-Si-based sendust alloys and the like, which have high magnetic flux sonicity, have come to be used. However, Fe-A1. -Si-based alloys have a general property unique to alloys, that is, they have low electrical resistance. Therefore, Fe-Al
When a high-frequency magnetic field necessary for high-density recording is applied to a magnetic head with a bulk magnetic circuit made of only 51-series alloy, the magnetic field does not penetrate sufficiently into the core and concentrates on the surface layer, generating eddy currents. As a result, magnetic flux transmission becomes insufficient and the effective magnetic permeability μ decreases. To prevent a decrease in the effective magnetic permeability μ, it is necessary to suppress eddy currents, and to interrupt the eddy current circuit, thin films of magnetic material and insulating layers may be alternately laminated. This is a general method used in various transformers. In order to effectively block eddy currents, the thickness of each magnetic thin film layer needs to be thinner than the high frequency skin depth δ. The skin depth δ is expressed as (ω = angular frequency, μ: magnetic permeability, ρ = electrical resistance), so in order to support higher frequencies, it is necessary to reduce the thickness of each magnetic thin film layer between the insulating layers. . Furthermore, it is necessary to suppress the magnetic resistance of the head core magnetic circuit. To achieve this, it is necessary to increase the ratio of the magnetic layer to the total film thickness (thickness of the entire core) regulated by the track width of the head, and to make the insulating layer thinner. That is, by making each magnetic layer thinner and laminating them, and increasing the number of laminations, it is possible to improve the high frequency characteristics. However, when a Fe-Al-Si alloy is formed on the surface of a ceramic substrate used in a lamination head, a crystallized glass substrate, or an SiO□ used for an insulating layer, the film thickness is 3 to 4 mm.
If the thickness is less than μm, there is a problem that crystal orientation is insufficient and crystal grains do not grow, making it impossible to obtain good magnetic properties. When the thickness of the Fe-Al-Si based alloy is 3 to 4 um or more, the number of laminations is limited, so the improvement in high frequency characteristics cannot be said to be sufficient.
本発明は上記の課題を解決するためなされたもので、磁
気特性が良好で、抗磁力や高周波帯域における実効透磁
率μが優れた磁気へ・ンドコア材料としての積層軟磁性
薄膜を提供することを目的とする。The present invention has been made to solve the above problems, and aims to provide a laminated soft magnetic thin film as a magnetic core material that has good magnetic properties and excellent coercive force and effective permeability μ in a high frequency band. purpose.
本発明者らは前記の目的を達成するために鋭意研究を重
ねた結果、基板上に下地として例えばＦｅ、 Ｎｉ、
Ｃｏ、 Ｃｒやパーマロイ系合金のような遷移金属薄膜
を数ｎｍ〜数十ｎｍ成膜した後、その表面にＦｅ−Ａｌ
−Ｓｉ系合金膜を成膜すると結晶配向が促進され、Ｆｅ
−Ａｌ−Ｓｉ系合金の膜厚が１〜２ＬＩＩ１１と薄い場
合でも優れた磁気特性が得られることを見出し、本発明
を完成するに至った６
即ち本発明の第１発明である積層軟磁性薄膜は、実施例
に対応する第１図に示すように、複数の軟磁性層２が薄
膜絶縁層３を介して積層され。
その軟磁性層２は複数層の軟磁性薄膜４・５で構成され
ている。軟磁性薄膜４・５のうち少なくとも隣合う軟磁
性薄膜の組成が異なっている。
第２発明の積層軟磁性薄膜は、複数の軟磁性層２が薄膜
絶縁層３を介して積層され、その軟磁性層２が遷移金属
薄膜４とその表面に成膜されたＦｅ−Ａｌ−Ｓｉ系合金
薄膜５とで構成されている。
第３発明の積層軟磁性薄膜は、第２図に示すように複数
の軟磁性層２が薄膜絶縁層３を介して積層され、その軟
磁性層２は、第１の遷移金属薄膜４、Ｆｅ−Ａｌ−Ｓｉ
系合金薄膜５および第２の遷移金属薄膜４ａがこの順に
積層された３層構造である。
Ｆｅ−Ａｌ−Ｓｉ系合金薄膜５の膜厚と遷移金属薄膜４
の膜厚との比率は１ ： ０．００１〜０１の範囲が望
ましい。遷移金属薄膜４の膜厚は数ｎｍ〜１１００ｎ程
度に設定しておく。遷移金属薄膜４の比率が０．００１
より小さくなると高い飽和磁束密度、低い抗磁力および
高い実効透磁率μが得られない。また０１より大きくな
ると遷移金属の特性が強くあられれ、実効透磁率μが低
下して抗磁力が大きくなる。
遷移金属薄膜４には、例えばＦｅ、 Ｎｉ、 Ｃｏ、
Ｃｒ、Ｍｎ、 Ｒｕ、 Ｖ、 Ｔｉ、 Ｚｒ、 Ｎｂ
、 Ｍｏ、 Ｒｈ、 Ｐｄ、 Ａｇから選ばれる元素を
単独で用いたり、これらの元素を種または複数種含む合
金を使用する。なかでも純度９７％以上のＦｅ、 Ｎｉ
、Ｇｏ、 Ｃｒやパーマロイ系合金が好適である。パー
マロイ系合金は、Ｎｉが７５〜８５重量％、Ｆｅが１５
〜２５重量％のものであり、Ｍｏを８重量％まで添加し
ても良い。
Ｆｅ−Ａｌ−Ｓｉ系合金薄膜５の主成分Ｆｅ、 Ａ１ｊ
５よびＳｌは、良好な磁気特性を得るためにＡｌが２〜
８重皿％、Ｓｌが６〜１２重量％、残りがＦｅであるこ
とが望ましい。特性改善のため、Ｆｅ−Ａｌ−Ｓｉ系合
金に例えばＣｒ、Ｎｂ、 Ｎｉ、 Ｒｕ、 Ｃｏ、Ｔｉ
、 Ｃｕ、Ｇａ、Ｇｅ、 Ｐｄから選ばれる少なくとも
１の成分を５％以下加えても良い。
薄膜絶縁層３には例えばＳｉＯ□、Ａ１□ｏ３．Ｓｉｓ
Ｎ４、Ｔａ２’ｓのような非磁性の絶縁体が使用可能で
ある。その厚さは電気的絶縁が確保される限り薄い方が
好ましい。
この積層軟磁性薄膜は、基板１上に遷移金属薄膜４を成
膜し、その上に直接Ｆｅ−Ａｌ−Ｓｉ系合金薄膜５、薄
膜絶縁層３を積層して形成される。第３発明の積層軟磁
性薄膜の場合はＦｅ−Ａｌ−Ｓｉ系合金薄膜５と薄膜絶
縁層３との間にさらに遷移金属薄膜４ａを成膜しておく
。
Ｆｅ−Ａｌ−Ｓｉ系合金薄膜、遷移金属薄膜および薄膜
絶縁層３の成膜には種々のスパッタ法や蒸着法を用いる
。The inventors of the present invention have conducted extensive research to achieve the above object, and as a result, we have found that, for example, Fe, Ni,
After forming a thin film of a transition metal such as Co, Cr or permalloy alloy to a thickness of several nanometers to several tens of nanometers, Fe-Al is deposited on the surface.
- When a Si-based alloy film is formed, crystal orientation is promoted, and Fe
- It was discovered that excellent magnetic properties can be obtained even when the film thickness of the Al-Si alloy is as thin as 1 to 2 LII11, and the present invention was completed6 That is, the laminated soft magnetic thin film which is the first invention of the present invention As shown in FIG. 1 corresponding to the embodiment, a plurality of soft magnetic layers 2 are laminated with a thin film insulating layer 3 interposed therebetween. The soft magnetic layer 2 is composed of a plurality of layers of soft magnetic thin films 4 and 5. At least adjacent soft magnetic thin films 4 and 5 have different compositions. In the laminated soft magnetic thin film of the second invention, a plurality of soft magnetic layers 2 are laminated with a thin film insulating layer 3 interposed therebetween, and the soft magnetic layer 2 is composed of a transition metal thin film 4 and a Fe-Al-Si film formed on the surface thereof. The alloy thin film 5 is made up of a thin film 5. In the laminated soft magnetic thin film of the third invention, as shown in FIG. -Al-Si
It has a three-layer structure in which the alloy thin film 5 and the second transition metal thin film 4a are laminated in this order. Thickness of Fe-Al-Si alloy thin film 5 and transition metal thin film 4
The ratio between the film thickness and the film thickness is preferably in the range of 1:0.001 to 0.01. The thickness of the transition metal thin film 4 is set to about several nm to 1100 nm. The ratio of transition metal thin film 4 is 0.001
If it is smaller, high saturation magnetic flux density, low coercive force, and high effective magnetic permeability μ cannot be obtained. When the value is larger than 01, the characteristics of the transition metal become stronger, the effective magnetic permeability μ decreases, and the coercive force increases. The transition metal thin film 4 includes, for example, Fe, Ni, Co,
Cr, Mn, Ru, V, Ti, Zr, Nb
, Mo, Rh, Pd, and Ag may be used alone, or an alloy containing one or more of these elements may be used. Among them, Fe, Ni with a purity of 97% or more
, Go, Cr and permalloy alloys are suitable. Permalloy alloy contains 75-85% by weight of Ni and 15% by weight of Fe.
~25% by weight, and up to 8% by weight of Mo may be added. Main component Fe of Fe-Al-Si alloy thin film 5, A1j
5 and Sl have Al in the range of 2 to 2 to obtain good magnetic properties.
It is preferable that the weight is 8% by weight, 6 to 12% by weight of Sl, and the balance is Fe. For example, Cr, Nb, Ni, Ru, Co, Ti is added to the Fe-Al-Si alloy to improve its properties.
, Cu, Ga, Ge, and Pd may be added in an amount of 5% or less. The thin film insulating layer 3 includes, for example, SiO□, A1□o3. Sis
Non-magnetic insulators such as N4, Ta2's can be used. The thinner the thickness is, the better, as long as electrical insulation is ensured. This laminated soft magnetic thin film is formed by forming a transition metal thin film 4 on a substrate 1, and directly laminating an Fe--Al--Si alloy thin film 5 and a thin film insulating layer 3 thereon. In the case of the laminated soft magnetic thin film of the third invention, a transition metal thin film 4a is further formed between the Fe--Al--Si alloy thin film 5 and the thin film insulating layer 3. Various sputtering methods and vapor deposition methods are used to form the Fe-Al-Si alloy thin film, the transition metal thin film, and the thin film insulating layer 3.
本発明の積層軟磁性薄膜は、遷移金属薄膜４の表面にＦ
ｅ−Ａｌ−Ｓｉ系合金薄膜５を積層させることによって
Ｆｅ−Ａｌ−Ｓｉ系合金の膜厚が１〜２ｕｍ以下と薄い
場合でも結晶粒が成長するため、充分に抑制された抗磁
力や高周波帯域におＧづる良好な実効透磁率が確保され
る。The laminated soft magnetic thin film of the present invention has F on the surface of the transition metal thin film 4.
By laminating the e-Al-Si alloy thin film 5, crystal grains grow even when the film thickness of the Fe-Al-Si alloy is as thin as 1 to 2 um or less, resulting in sufficiently suppressed coercive force and high frequency band. Good effective magnetic permeability is ensured.
以下、本発明の詳細な説明する。
第１図に本発明を適用する積層軟磁性薄膜の一実施例の
側面図を示す。この積層軟磁性薄膜は、基板ｌの表面に
遷移金属薄膜４、Ｆｅ−Ａｌ−Ｓｉ系合金薄Ｉｔ！ ５
および薄膜絶縁層３をこの順に繰返して積層したもので
ある。基板１は熱膨張係数がＦｅ−Ａｌ５１系合金に近
い結晶化ガラスを光学研磨したものである。Ｆｅ−Ａｌ
−Ｓｉ系合金薄膜５の組成はＦｅが８５重量％、Ａ１が
５．４重量％、Ｓｉが ９．６重量％になっている。
薄膜絶縁層３はＳｉＯ□を用いている。
以下は本発明の具体的な実験例である。
先ず遷移金属としてＦｅを用いる例を説明する。
実施例１
３個のターゲラ］−が取り付は可能なマグネトロン型高
周波スパッタ装置に、ターゲットとして純度９９９％の
Ｆｅ、 Ｆｅ−Ａｔ−Ｓｉ系合金および５１０２のター
ゲットを取り付ける。基板ｌに純Ｆｅｌ膜４を２０ｎｍ
、 Ｆｅ−Ａｌ−Ｓｉ系合金薄膜５を０．８１１ｍ、そ
して５１０２の薄膜絶縁層３を０．２μｍの順で真空を
破らずに連続して成膜し、この操作を２０回繰返して総
膜厚２０μｍの積層軟磁性薄膜を成膜する。各物質の成
膜は、膜中に応力が発生しないように夫々最適のスパッ
タ放電条件を選んで行なう。成膜終了後、この積層薄膜
試料に真空中で６００℃、１時間の熱処理を施すと積層
軟磁性薄膜が得られる。
比較例１
純Ｆｅ薄膜を設けず、基板ｌに３．８＋ｏｎのＦｅ−Ａ
ｌ−Ｓｉ系合金膜を直接成膜し、その表面にＳｉＯ□の
薄膜絶縁層を０．２ ｕｍ成膜するにの操作を５回繰返
して総膜厚を２０１１ｍとした積層軟磁性薄膜を作成し
た。
成膜条件、熱処理条件等は実施例１と同一である。
比較例２
Ｆｅ−Ａｌ−Ｓｉ系合金のみで厚さ２０μｍの単層薄膜
を作成した。成膜条件、熱処理条件等は実施例１と同一
である。
実施例１、比較例１および比較例２で作成した各磁性薄
膜の高周波実効透磁率μを８の字コイル法で測定した。
測定結果を第３図に示す。なお、同図では高周波域にお
ける磁気特性の比較を容易にするために、０．５１）ｌ
ｚにおける透磁率の値で規格化したものである。 ０．
５ＭＨｚにおける各磁性薄膜の実効透磁率μは、実施例
１、比較例１．比較例２の順に夫々２８００．２４００
．２５００であった。
第３図から明らかなように、Ｆｅ−Ａｌ−Ｓｉ系合金薄
膜の下地としてわずか２（ｌｎｍ厚の純Ｆｅ薄膜を成膜
し、Ｆｅ−Ａｌ−Ｓｉ系合金膜の一層の膜厚を薄くして
積層回数を多くすることにより、高周波領域における実
効透磁率μが大きく改善されていることがわかる。
次に、遷移金属としてパーマロイ系合金を用いた例を説
明する。
実施例２
実施例１で使用したマグネトロン型高周波スパッタ装置
のＦｅターゲットを、Ｎｉが７５〜８５重量％、Ｆｅが
１５〜２５重量％からなるパーマロイ系合金ターゲット
に替え、成膜な行なう。基板１にパーマロイ系合金薄膜
４を５ ｎｍ、 Ｆｅ−Ａ１Ｓｉ系合金薄膜５を５．０
ｇｍ、そしてＳｉＯｚの薄膜絶縁層３を０．２１＋ｍの
順に真空を破らずに連続して成膜し、この操作を４回繰
返して総膜厚２０．８ａｍの積層軟磁性薄膜を成膜する
。各物質の成膜は、膜中に応力が発生しないように夫々
最適のスパック放電条件を選ぶ。
成膜終了後、この積層薄膜試料に真空中で６００℃、１
時間の熱処理を施し、積層軟磁性薄膜を得た。
比較例３
パーマロイ系合金薄膜４を設けず、基板１に５．０μｍ
のＦｅ−Ａｌ−Ｓｉ系合金膜を直接成膜し、その表面に
３１０２の薄膜絶縁層を０．３１１ｍ成膜する。この操
作を４回繰返して総膜厚が２１．２１Ｉｍの積層軟磁性
薄膜を作成した。成膜条件、熱処理条件等は実施例２と
同一である。
比較例４
Ｆｅ−Ａｌ−Ｓｉ系合金のみで厚さ２０１℃ｍの単層薄
膜を作成した。成膜条件、熱処理条件等は実施例２と同
一である。
実施例２、比較例３８よび比較例４で作成した各磁性薄
膜の飽和磁束密度Ｂｓと抗磁力Ｈｃとを、振動試料型磁
力計を用いて測定した。第４図に測定結果を示す。
第４図の結果より、Ｆｅ−Ａｌ−Ｓｉ系合金薄膜の下地
としてわず°か５ｎｍ厚のパーマロイ系合金薄膜を成膜
し、Ｆｅ−Ａｌ−Ｓｉ系合金膜の一層の膜厚を薄くして
積層回数を多くすることにより抗磁力Ｈｃが太き（改善
されていることがわかる。
また、遷移金属としでＦｅのかわりにＮｉやＧｏ、 Ｃ
ｒを用い、実施例１と同様にして積層軟磁性薄膜を作成
したところ、得られた積層軟磁性薄膜は実施例１や実施
例２と同等の優れた磁気特性を有していた。
なお、第２図は別の積層軟磁性薄膜の実施例である。こ
れは第１図を用いて説明した積層軟磁性薄膜の軟磁性層
２を、第１の遷移金属薄膜４、Ｆｅ−Ａｌ−Ｓｉ系合金
薄膜５および第２の遷移金属薄膜４ａをこの順に積層し
て３層構造にしたものである。遷移金属薄膜４・４ａに
はＦｅ、 Ｎｉ、Ｃｏ、 Ｃｒやパーマロイ系合金を使
用している。このように軟磁性層２を３層構造にすると
、前述した遷移金属薄膜の効果をさらに強化することが
出来る。
【発明の効果］
以上詳細に説明したように、本発明の積層軟磁性薄膜は
、従来のＦｅ−Ａｌ−Ｓｉ系合金薄膜とＳｉＯ□膜を交
互に成膜した積層膜に比べて実効透磁率や抗磁力が改善
されており、優れた磁気特性を有している。そのため、
高密度記録用磁気へ・ンドのコア材として最適である。The present invention will be explained in detail below. FIG. 1 shows a side view of an embodiment of a laminated soft magnetic thin film to which the present invention is applied. This laminated soft magnetic thin film includes a transition metal thin film 4 on the surface of a substrate l, and a Fe-Al-Si alloy thin It! 5
and thin film insulating layer 3 are repeatedly laminated in this order. The substrate 1 is optically polished crystallized glass having a coefficient of thermal expansion close to that of Fe-Al51 alloy. Fe-Al
The composition of the -Si-based alloy thin film 5 is 85% by weight of Fe, 5.4% by weight of A1, and 9.6% by weight of Si. The thin film insulating layer 3 uses SiO□. The following are specific experimental examples of the present invention. First, an example using Fe as the transition metal will be explained. Example 1 A target of 999% pure Fe, Fe-At-Si alloy, and 5102 was attached to a magnetron-type high-frequency sputtering device to which three targeters could be attached. 20 nm pure Fel film 4 on substrate l
, Fe-Al-Si alloy thin film 5 of 0.811 m and 5102 thin film insulating layer 3 of 0.2 μm were successively formed without breaking the vacuum, and this operation was repeated 20 times to form a total film. A laminated soft magnetic thin film with a thickness of 20 μm is formed. Films of each substance are formed by selecting optimal sputter discharge conditions for each material so as not to generate stress in the film. After the film formation is completed, this laminated thin film sample is heat treated in vacuum at 600° C. for 1 hour to obtain a laminated soft magnetic thin film. Comparative Example 1 No pure Fe thin film was provided, and 3.8+on Fe-A was used on the substrate l.
The operation of directly depositing an l-Si alloy film and depositing a thin insulating layer of SiO□ with a thickness of 0.2 um on its surface was repeated five times to create a laminated soft magnetic thin film with a total film thickness of 2011 m. did. The film forming conditions, heat treatment conditions, etc. are the same as in Example 1. Comparative Example 2 A single-layer thin film with a thickness of 20 μm was created using only a Fe-Al-Si alloy. The film forming conditions, heat treatment conditions, etc. are the same as in Example 1. The high-frequency effective magnetic permeability μ of each of the magnetic thin films prepared in Example 1, Comparative Example 1, and Comparative Example 2 was measured using the figure-eight coil method. The measurement results are shown in Figure 3. In addition, in the same figure, in order to facilitate comparison of magnetic properties in the high frequency range, 0.51) l
It is normalized by the value of magnetic permeability at z. 0.
The effective magnetic permeability μ of each magnetic thin film at 5 MHz is as follows: Example 1, Comparative Example 1. 2800.2400 respectively in the order of comparative example 2
．． It was 2500. As is clear from Fig. 3, a pure Fe thin film with a thickness of only 2 (lnm) was formed as the base of the Fe-Al-Si alloy thin film, and the thickness of one layer of the Fe-Al-Si alloy film was reduced. It can be seen that by increasing the number of laminations, the effective magnetic permeability μ in the high frequency region is greatly improved.Next, an example using a permalloy alloy as the transition metal will be explained.Example 2 In Example 1 The Fe target of the magnetron-type high-frequency sputtering device used was replaced with a permalloy alloy target consisting of 75 to 85% by weight of Ni and 15 to 25% by weight of Fe, and film formation was performed. 5 nm, Fe-A1Si alloy thin film 5 5.0
gm, and SiOz thin film insulating layers 3 of 0.21+m are successively formed in the order of 0.21+m without breaking the vacuum, and this operation is repeated four times to form a laminated soft magnetic thin film with a total thickness of 20.8 am. For film formation of each substance, the optimum spuck discharge conditions are selected so as not to generate stress in the film. After film formation, this laminated thin film sample was heated at 600°C for 1 hour in a vacuum.
A laminated soft magnetic thin film was obtained by heat treatment for several hours. Comparative Example 3 Permalloy alloy thin film 4 was not provided, and the substrate 1 had a thickness of 5.0 μm.
A Fe-Al-Si alloy film is directly formed, and a thin insulating layer 3102 is formed to a thickness of 0.311 m on the surface thereof. This operation was repeated four times to create a laminated soft magnetic thin film with a total film thickness of 21.21 Im. The film forming conditions, heat treatment conditions, etc. are the same as in Example 2. Comparative Example 4 A single-layer thin film with a thickness of 201° C.m was created using only a Fe-Al-Si alloy. The film forming conditions, heat treatment conditions, etc. are the same as in Example 2. The saturation magnetic flux density Bs and coercive force Hc of each of the magnetic thin films prepared in Example 2, Comparative Example 38, and Comparative Example 4 were measured using a vibrating sample magnetometer. Figure 4 shows the measurement results. From the results shown in Figure 4, it is possible to form a permalloy alloy thin film with a thickness of only 5 nm as the base of the Fe-Al-Si alloy thin film, and to reduce the thickness of one layer of the Fe-Al-Si alloy film. It can be seen that by increasing the number of laminations, the coercive force Hc becomes thicker (improved).Also, in place of Fe as a transition metal, Ni, Go, C
When a laminated soft magnetic thin film was prepared using r in the same manner as in Example 1, the obtained laminated soft magnetic thin film had excellent magnetic properties equivalent to those of Examples 1 and 2. Note that FIG. 2 shows an example of another laminated soft magnetic thin film. This is done by laminating the soft magnetic layer 2 of the laminated soft magnetic thin film explained using FIG. It has a three-layer structure. Fe, Ni, Co, Cr, and permalloy alloys are used for the transition metal thin films 4 and 4a. When the soft magnetic layer 2 has a three-layer structure in this way, the effect of the transition metal thin film described above can be further enhanced. Effects of the Invention As explained in detail above, the laminated soft magnetic thin film of the present invention has a lower effective magnetic permeability than the conventional laminated film in which Fe-Al-Si alloy thin films and SiO□ films are alternately formed. It has improved magnetic properties and coercive force. Therefore,
It is ideal as a core material for magnetic heads for high-density recording.
第１図および第２図は本発明の積層軟磁性薄膜の実施例
を示す側面図、第３図および第４図は積層軟磁性薄膜の
磁気特性を示す図である１・・・基板 ２・・
・軟磁性層３・・・薄膜絶縁層 ４・４ａ・・・遷移
金属薄膜５ ＝−Ｆｅ−Ａｌ−Ｓｉ系合金薄膜1 and 2 are side views showing examples of the laminated soft magnetic thin film of the present invention, and FIGS. 3 and 4 are diagrams showing the magnetic properties of the laminated soft magnetic thin film. 1...Substrate 2.・
- Soft magnetic layer 3... Thin film insulating layer 4, 4a... Transition metal thin film 5 = -Fe-Al-Si alloy thin film
Claims (11)
記軟磁性層が複数層の軟磁性薄膜で構成されており、該
軟磁性薄膜のうち少なくとも隣合う軟磁性薄膜の組成が
異なることを特徴とする積層軟磁性薄膜。1. A plurality of soft magnetic layers are laminated with a thin film insulating layer interposed therebetween, the soft magnetic layer is composed of a plurality of soft magnetic thin films, and at least adjacent soft magnetic thin films among the soft magnetic thin films have different compositions. Features a laminated soft magnetic thin film.
記軟磁性層が遷移金属薄膜とその表面に成膜されたＦｅ
−Ａｌ−Ｓｉ系合金薄膜とで構成されていることを特徴
とする積層軟磁性薄膜。2. A plurality of soft magnetic layers are laminated with thin film insulating layers interposed therebetween, and the soft magnetic layer includes a transition metal thin film and an Fe layer formed on the surface of the transition metal thin film.
- A laminated soft magnetic thin film comprising: - an Al-Si alloy thin film.
記軟磁性層は第１の遷移金属薄膜、Ｆｅ−Ａｌ−Ｓｉ系
合金薄膜および第２の遷移金属薄膜がこの順に積層され
た３層構造であることを特徴とする積層軟磁性薄膜。3. A plurality of soft magnetic layers are laminated with thin film insulating layers interposed therebetween, and the soft magnetic layer is a three-layer structure in which a first transition metal thin film, an Fe-Al-Si alloy thin film, and a second transition metal thin film are laminated in this order. A laminated soft magnetic thin film characterized by its structure.
系合金薄膜の膜厚と遷移金属薄膜の膜厚との比率が１：
０．００１〜０．１であることを特徴とする積層軟磁性
薄膜。4. Fe-Al-Si according to claim 2 or 3
The ratio of the thickness of the alloy thin film to the thickness of the transition metal thin film is 1:
A laminated soft magnetic thin film characterized in that the magnetic flux is 0.001 to 0.1.
度９７％以上のＦｅであることを特徴とする積層軟磁性
薄膜。5. A laminated soft magnetic thin film, wherein the transition metal thin film according to claim 2 or 3 is Fe with a purity of 97% or more.
度９７％以上のＮｉであることを特徴とする積層軟磁性
薄膜。6. A laminated soft magnetic thin film, wherein the transition metal thin film according to claim 2 or 3 is Ni with a purity of 97% or more.
度９７％以上のＣｏであることを特徴とする積層軟磁性
薄膜。7. A laminated soft magnetic thin film, wherein the transition metal thin film according to claim 2 or 3 is Co with a purity of 97% or more.
度９７％以上のＣｒであることを特徴とする積層軟磁性
薄膜。8. The laminated soft magnetic thin film according to claim 2 or 3, wherein the transition metal thin film is Cr with a purity of 97% or more.
Ｎｉが７５〜８５重量％、Ｆｅが１５〜２５重量％およ
び８重量％以下のＭｏからなるパーマロイ系合金である
ことを特徴とする積層軟磁性薄膜。9. The transition metal thin film according to claim 2 or 3,
A laminated soft magnetic thin film characterized in that it is a permalloy alloy consisting of 75 to 85% by weight of Ni, 15 to 25% by weight of Fe, and 8% by weight or less of Mo.
ｉ系合金薄膜の主成分Ｆｅ、ＡｌおよびＳｉは、Ａｌが
２〜８重量％、Ｓｉが６〜１２重量％、残りがＦｅであ
ることを特徴とする積層軟磁性薄膜。10. Fe-Al-S according to claim 2 or 3
A laminated soft magnetic thin film characterized in that the main components Fe, Al and Si of the i-based alloy thin film are 2 to 8% by weight of Al, 6 to 12% by weight of Si, and the remainder Fe.
ｉ系合金にＣｒ、Ｎｂ、Ｎｉ、Ｒｕ、Ｃｏ、Ｔｉ、Ｃｕ
、Ｇａ、Ｇｅ、Ｐｄから選ばれる少なくとも１の成分が
５％以下含まれていることを特徴とする積層軟磁性薄膜
。11. Fe-Al-S according to claim 2 or 3
i-based alloys include Cr, Nb, Ni, Ru, Co, Ti, Cu
, Ga, Ge, and Pd in an amount of 5% or less.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7221990 | 1990-03-23 | ||
| JP2-72219 | 1990-03-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03278409A true JPH03278409A (en) | 1991-12-10 |
Family
ID=13482919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20892290A Pending JPH03278409A (en) | 1990-03-23 | 1990-08-06 | Laminated thin soft magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03278409A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022751A (en) * | 2016-10-31 | 2018-05-11 | 北京北方华创微电子装备有限公司 | Deposition process, thin magnetic film lamination and the micro-inductor device of thin magnetic film lamination |
-
1990
- 1990-08-06 JP JP20892290A patent/JPH03278409A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022751A (en) * | 2016-10-31 | 2018-05-11 | 北京北方华创微电子装备有限公司 | Deposition process, thin magnetic film lamination and the micro-inductor device of thin magnetic film lamination |
| JP2020501341A (en) * | 2016-10-31 | 2020-01-16 | 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． | Deposition method of magnetic thin film laminated structure, magnetic thin film laminated structure, and micro inductance device |
| US11699541B2 (en) | 2016-10-31 | 2023-07-11 | Beijing Naura Microelectronics Equipment Co., Ltd. | Magnetic thin film laminated structure deposition method |
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