JPH03263307A - Laminated layer soft magnetic thin film - Google Patents
Laminated layer soft magnetic thin filmInfo
- Publication number
- JPH03263307A JPH03263307A JP20892190A JP20892190A JPH03263307A JP H03263307 A JPH03263307 A JP H03263307A JP 20892190 A JP20892190 A JP 20892190A JP 20892190 A JP20892190 A JP 20892190A JP H03263307 A JPH03263307 A JP H03263307A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- transition metal
- soft magnetic
- coercive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 124
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 56
- 239000000956 alloy Substances 0.000 claims abstract description 56
- 229910000702 sendust Inorganic materials 0.000 claims abstract description 42
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 41
- 150000003624 transition metals Chemical class 0.000 claims abstract description 41
- 230000004907 flux Effects 0.000 claims abstract description 33
- 230000035699 permeability Effects 0.000 claims abstract description 33
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 229910000889 permalloy Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 13
- 239000011162 core material Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910001017 Alperm Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Abstract
Description
本発明は磁気へラドコアの材料に適した積層軟磁性薄膜
に関するものである。The present invention relates to a laminated soft magnetic thin film suitable as a material for a magnetic helad core.
ビデオテープレコーダーや磁気ディスク装置は年々記録
密度が向上しており、高密度記録に対応した磁気ヘッド
が強く求められている。
高密度記録用の磁気ヘッドには、従来より飽和磁束密度
Ｂｓおよび実効透磁率μが高く、かつ抗磁力Ｈｃが低い
素材からなるコアが必要である。
高密度記録用磁気ヘッドのコア材には、例えばパーマロ
イ系合金やアルパーム合金、また、Ｆｅ−Ａｌ−Ｓｉ三
元系を母体とするセンダスト系合金がある。中てもセン
ゲスト系合金は、組成を調整することによって磁歪定数
および結晶磁気異方性定数をゼロにすることができ、極
めて優れた軟磁気特性を有している。しか’ｂＦｅの含
有率が比較的高いため、Ｆｅの大きな磁気モーメントを
反映して飽和磁束密度も高い。
しかし、このセンダスト系合金は機械加工が難しく、バ
ルク材から磁気ヘッドを製造するにはコストダウンが難
しいという欠点がある。近年ではスパッタ法などの薄膜
形成技術を用いて成膜したものが高密度記録用磁気へラ
ドコア材として用いられているが、薄膜化したセンダス
ト合金は磁歪定数、結晶磁気異方性定数を共にゼロにす
ることが困難で、バルク材はどの軟磁気特性を実現する
までには至っていない。
高密度記録磁気ヘッド用コア材としての特性を満たすに
は、抗磁力Ｈｅを小さくしてヒステリシス損失やノイズ
を低減し、実効透磁率μを大きくして再生出力を確保す
ることが必要だが、薄膜化したセンダスト合金において
は抗磁力Ｈｃが０．３〜０．５工ルステツド程度であり
、周波数Ｉ ＭＨｚにおける実効透磁率Ｕが１０００〜
３０００程度である。また、その膜厚がｌ〜２＋＋ｍ以
下のときは結晶成長が充分でなく軟磁気特性の劣化が見
られる。
しかし、このセンタスト系合金は基本的に優れた軟磁気
特性を有しているため、磁気ディスク用に使用されつつ
ある薄膜ヘッドや、フェライトヘッドのギャップ近傍の
みに高飽和磁束密度の金属を配したメタルインギャップ
ヘッドなどへの応用が望まれている。The recording density of video tape recorders and magnetic disk devices is improving year by year, and there is a strong demand for magnetic heads that can handle high-density recording. A magnetic head for high-density recording requires a core made of a material that has a higher saturation magnetic flux density Bs and an effective magnetic permeability μ and a lower coercive force Hc than before. Core materials for high-density recording magnetic heads include, for example, permalloy alloys, alperm alloys, and sendust alloys having a Fe-Al-Si ternary system as a matrix. Among these, Sengest alloys can have a magnetostriction constant and a magnetocrystalline anisotropy constant of zero by adjusting their composition, and have extremely excellent soft magnetic properties. However, since the content of 'bFe is relatively high, the saturation magnetic flux density is also high, reflecting the large magnetic moment of Fe. However, this sendust alloy is difficult to machine, and it is difficult to reduce costs when manufacturing magnetic heads from bulk materials. In recent years, films formed using thin film formation techniques such as sputtering have been used as magnetic herad core materials for high-density recording, but the thinned Sendust alloy has both a magnetostriction constant and a magnetocrystalline anisotropy constant of zero. However, bulk materials have not yet achieved any soft magnetic properties. In order to satisfy the characteristics as a core material for high-density recording magnetic heads, it is necessary to reduce the coercive force He to reduce hysteresis loss and noise, and to increase the effective magnetic permeability μ to ensure reproduction output. In the developed Sendust alloy, the coercive force Hc is about 0.3 to 0.5 degrees, and the effective magnetic permeability U at the frequency I MHz is about 1000 to 1000.
It is about 3000. Further, when the film thickness is less than 1 to 2++ m, crystal growth is insufficient and deterioration of soft magnetic properties is observed. However, since this Centast alloy basically has excellent soft magnetic properties, it is necessary to place metal with high saturation magnetic flux density only in the vicinity of the gap of thin film heads and ferrite heads that are being used for magnetic disks. Application to metal-in-gap heads, etc. is desired.
本発明は上述の点に鑑みてＦｅ−Ａｌ−３ｉ系合金（セ
ンダスト系合金〕の高い飽和磁束密度を保有し、なおか
つ従来よりも低い抗磁力、高い実効透磁率を有する積層
軟磁性薄膜、更にはその膜厚が１〜２＋＋ｍ以下と薄く
てち充分に高い飽和磁束密度、低い抗磁力、高い実効透
磁率を有する積層軟磁性薄膜を提供することを目的とす
る。In view of the above-mentioned points, the present invention provides a laminated soft magnetic thin film that has a high saturation magnetic flux density of Fe-Al-3i alloy (sendust alloy), and also has lower coercive force and higher effective magnetic permeability than conventional ones. The object of the present invention is to provide a laminated soft magnetic thin film having a thin film thickness of 1 to 2++ m or less and having sufficiently high saturation magnetic flux density, low coercive force, and high effective magnetic permeability.
前記の課題を解決するためになされた本発明の積層軟磁
性薄膜を、実施例に対応する第１図を用いて説明する。
同図に示すように本発明の第１発明である積層軟磁性薄
膜は、基板ｌ上に成膜された遷移金属薄膜層２上に主成
分がＦｅ、 ＡｌおよびＳｉであるセンダスト系合金の
薄膜層３が積層されている。
また、第２発明の積層軟磁性薄膜は、基板１上に成膜さ
れた遷移金属薄膜層２上に主成分がＦｅ、ＡｌおよびＳ
ｉであるセンダスト系合金の薄膜層３が積層され、飽和
磁束密度が１００００ガウス以上、抗磁力が０．５エル
ステッド以下で、周波数Ｉ ＭＨｚにおける実効透磁率
が１０００以上である。
センダスト系合金薄膜層３の膜厚と遷移金属薄膜層２の
膜厚との比率は、前者が１に対して後者が０．００１〜
０１であることが望ましい。遷移金属薄膜層２の比率が
０．００１より小さくなると、高い飽和磁束密度、低い
抗磁力および高い透磁率は得られ難い。また ０．１よ
り大きくなると遷移金属の特性が強くあられれ、実効透
磁率が低下し、抗磁力が大きくなる。
遷移金属薄膜層２は、例えば純度９７％以上のＦｅ、
Ｎｉ、 Ｇｏ、 Ｃｒや、パーマロイ系合金を使用する
。パーマロイ系合金はＮｉが７５〜８５重量％、Ｆｅが
１５〜２５重量％であり、Ｍｏを８重量％まで添加して
も良い。
センダスト系合金の主成分Ｆｅ、 ＡｌおよびＳｉは、
Ａｌが２〜８重量％、Ｓｉが６〜１２重量％および残量
がＦｅである。この組成範囲からはずれると磁歪定数お
よび結晶磁気異方性の値が増大し、抗磁力が大きくなり
、高い実効透磁率μが確保できなくなる。
積層軟磁性薄膜の特性改善のため、Ｆｅ−Ａｌ−３ｉ系
のセンダスト系合金に例えばＣｒ、 Ｎｂ、Ｎｉ、Ｒｕ
、Ｇｏ、Ｔｉ、 Ｃｕ、 Ｇａ、 Ｇｅ、 Ｐｄから選
ばれる少なくともｌの成分を５％以下加えても良い。
この積層軟磁性薄膜は、基板１上に遷移金属薄膜層２を
形成し、その上に直接センダスト系合金薄膜層３を積層
して製造される。遷移金属薄膜層２およびセンダスト系
合金薄膜層３の形成には、例えばスパッタ法を用いる。The laminated soft magnetic thin film of the present invention, which has been made to solve the above problems, will be explained with reference to FIG. 1, which corresponds to an embodiment. As shown in the figure, the laminated soft magnetic thin film which is the first invention of the present invention is a thin film of a sendust alloy whose main components are Fe, Al and Si on a transition metal thin film layer 2 formed on a substrate l. Layer 3 is laminated. Further, in the laminated soft magnetic thin film of the second invention, the main components are Fe, Al and S on the transition metal thin film layer 2 formed on the substrate 1.
A thin film layer 3 of a Sendust-based alloy i is laminated, and has a saturation magnetic flux density of 10,000 Gauss or more, a coercive force of 0.5 Oe or less, and an effective magnetic permeability at a frequency of I MHz of 1,000 or more. The ratio between the thickness of the sendust alloy thin film layer 3 and the thickness of the transition metal thin film layer 2 is 1 for the former and 0.001 for the latter.
01 is desirable. When the ratio of the transition metal thin film layer 2 is smaller than 0.001, it is difficult to obtain high saturation magnetic flux density, low coercive force, and high magnetic permeability. Moreover, when it is larger than 0.1, the characteristics of the transition metal become strong, the effective magnetic permeability decreases, and the coercive force increases. The transition metal thin film layer 2 is made of, for example, Fe with a purity of 97% or more,
Use Ni, Go, Cr, or permalloy alloy. The permalloy alloy contains 75 to 85% by weight of Ni, 15 to 25% by weight of Fe, and may contain up to 8% by weight of Mo. The main components of sendust alloys are Fe, Al and Si.
Al is 2 to 8% by weight, Si is 6 to 12% by weight, and the balance is Fe. When the composition deviates from this range, the values of the magnetostriction constant and magnetocrystalline anisotropy increase, the coercive force increases, and a high effective magnetic permeability μ cannot be ensured. In order to improve the characteristics of the laminated soft magnetic thin film, for example, Cr, Nb, Ni, Ru, etc. are added to the Fe-Al-3i-based sendust alloy.
, Go, Ti, Cu, Ga, Ge, and Pd in an amount of 5% or less. This laminated soft magnetic thin film is manufactured by forming a transition metal thin film layer 2 on a substrate 1 and directly laminating a sendust alloy thin film layer 3 thereon. For example, a sputtering method is used to form the transition metal thin film layer 2 and the sendust alloy thin film layer 3.
本発明の積層軟磁性薄膜は、遷移金属薄膜層２とセンダ
スト系合金薄膜層３とを前述のように積層することによ
り、センダスト系合金の膜厚が１〜２μｍ以下と薄い場
合でも結晶が充分に成長するため、高い飽和磁束密度、
低い抗磁力および高い実効透磁率が得られている。
この積層軟磁性薄膜は、例えば飽和磁束密度が１０００
０ガウス以上、抗磁力が０．５エルステッド以下で、周
波数Ｉ ＭＨｚにおける実効透磁率が１５００以上の磁
気特性が得られ、高密度記録用の磁気ヘッドコア材料と
して適している。By laminating the transition metal thin film layer 2 and the sendust alloy thin film layer 3 as described above, the laminated soft magnetic thin film of the present invention has sufficient crystallization even when the film thickness of the sendust alloy is as thin as 1 to 2 μm or less. High saturation magnetic flux density,
Low coercive force and high effective permeability are obtained. This laminated soft magnetic thin film has a saturation magnetic flux density of 1000, for example.
It has magnetic properties of 0 Gauss or more, a coercive force of 0.5 Oe or less, and an effective magnetic permeability of 1500 or more at a frequency of I MHz, and is suitable as a magnetic head core material for high-density recording.
以下、本発明の詳細な説明する。
第１図に本発明を適用する積層軟磁性薄膜の一実施例を
示す。この積層軟磁性薄膜は、基板１の表面に遷移金属
薄膜層２と、Ｆｅ−Ａｌ−Ｓｉ三元系のセンダスト系合
金薄膜層３とを順次積層したものである。センダスト系
合金薄膜層３の組成はＦｅが８５重量％、Ａ１が５．４
重量％、Ｓｉが９．６重量％になっている。
本発明の実験例は以下の通りである。
実施例１（遷移金属としてＦｅを用いた例）表面を光学
研磨した１０ｍｍＸ ＩＤｍｍＸ ｌ ｍｍサイズの結
晶化ガラス基板ｌの表面に、高周波マグネトロンスパッ
タ装置を用いて純度９９．９％のＦｅ薄膜層２を成膜し
、続いてその表面に厚さ１１１ｍのセンダスト系合金薄
膜層３を成膜して積層軟磁性薄膜を作成する。Ｆｅ薄膜
層２の厚さは１．５．１Ｏ１５０，１００，５００，１
１０００ｎに設定した。スパッタ条件は、ＲＦ電力８０
０ｗ、アルゴンガス圧カー、 ２Ｘ１０−２Ｔｏｒｒで
ある。
得られた積層軟磁性薄膜に真空中で６００Ｔ：、１時間
の熱処理を施した後、振動試料型磁力計を用いて飽和磁
束密度Ｂｓおよび抗磁力Ｈｃを測定した。実効透磁率μ
は８の字コイル法で測定した。
第２図にＦｅ薄膜層２が１ｏｎｎ＋、センダスト系合金
薄膜層３がｌｌＩｍである積層軟磁性薄膜のＢ−Ｈ曲線
を示す。同図に示したＦｅ薄膜層１０ｎｍのときの磁気
特性は、Ｂｓ＝１２０００ガウス、Ｈｃ＝０．０５エル
スデツド、μ＝ ５００Ｏｆｆ＝１ＭＨｚ）である。
第３図にＦｅ薄膜層２の厚さを変化させた積層軟磁性薄
膜の飽和磁束密度Ｂｓを、第４図に抗磁力Ｈｃおよび実
効透磁率μを示す。これらの図よりＦｅ薄膜層２の膜厚
が１〜１１００ｎ、即ちセンダスト系合金薄膜層３の膜
厚を１とした場合、Ｆｅ薄膜層２の膜厚が０．００１〜
０．１の範囲に設定してあれば、飽和磁束密度Ｂｓ、抗
磁力Ｈｅともに良好な値が得られることがわかる。
次に前記と同じ成膜方法を用い、Ｆｅ薄膜層２を２０ｎ
ｍと一定にし、センダスト系合金薄膜層３の膜厚を０．
１．０．２．０．５、１．５．１０ｇｍと変化させて、
積層磁性合金膜を作成した。同様の熱処理を行なった後
、飽和磁束密度Ｂｓ、抗磁力Ｈｅおよび実効透磁率μの
測定を行なった。第５図にセンダスト系合金薄膜３の厚
さを変化させた積層軟磁性薄膜の飽和磁束密度Ｂｓ、第
６図に抗磁力Ｈｃおよび実効透磁率μを示す。これらの
図よりセンダスト系合金薄膜層３の膜厚が０．２〜ｌＯ
μｍ、即ちセンダスト系合金薄膜層３の膜厚を１とした
場合、Ｆｅ薄膜層２の膜厚が０．００２〜０．１の範囲
に設定してあれば、飽和磁束密度Ｂｓ、抗磁力Ｈｃおよ
び実効透磁率Ｕとも０
に良好なことがわかる。なかでも、センタスト系合金薄
膜層３の膜厚を１μｍに設定したときの磁気特性は、Ｂ
ｓ＝ １２０００ガウス、Ｈｃ＝０．０５エルステッド
、μ＝５００Ｏｆｆ・ＩＭｏｚ）と良好な値が得られた
。
参考のため、Ｆｅ薄膜層２を設けずに基板１へ直接セン
タスト系合金を１１１ｍ成膜し、その磁気特性を洞定し
た。第１６図にＢ −８曲線を示す。この試料の飽和磁
束密度Ｂｓ、抗磁力Ｈｃおよび実効透磁率Ｈの測定値を
第３図および第４図に示す。
実施例２〔遷移金属としてＮｉを用いた例）表面を光学
研磨した５ ｍｍＸ ｌＯｍｍＸ ｌ ｍｍサイズの結
晶化ガラス基板１の表面に、高周波マグネトロンスパッ
タ装置を用いて純度９９９％のＮｉ薄膜層２を成膜し、
続いてその表面に厚さＩＩＩｍのセンダスト系合金薄膜
層３を成膜して積層軟磁性薄膜を作成する。遷移金属薄
膜層２の厚さは１．５．１０．３０、１００ｒ＋ｍに設
定した。スパッタ条件はＲＦ電力６００Ｗ、アルゴンガ
ス圧力１．０ＸｌＯ−２Ｔｏｒｒである。
得られた積層軟磁性薄膜に実施例１と同様の熱処理を施
した後、飽和磁束密度Ｂｓ、抗磁力Ｈｃおよ１
び実効透磁率μを洞定した。
第７図にＮｉ薄膜層２の厚さを変化させた積層軟磁性薄
膜の飽和磁束密度Ｂｓを、第８図に抗磁力Ｈｃおよび実
効透磁率μを示す。これらの図より、遷移金属薄膜層２
の膜厚が１〜５０ｎｍ、即ちセンダスト系合金薄膜層３
の膜厚を１とした場合、遷移金属薄膜層２の膜厚が０．
００１〜０．０５の範囲に設定してあれば、飽和磁束密
度Ｂｓ、抗磁力Ｈｃともに良好な値が得られることがわ
かる。
実施例３（遷移金属としてＣｏを用いた例）遷移金属と
して純度９９．７％のＧｏを用いて実施例２と同様にし
て積層軟磁性薄膜を作成し、飽和磁束密度Ｂｓ、抗磁力
Ｈｃおよび実効透磁率１１を測定した。
第９図にＣｏ薄膜層２の厚さを変化させた積層軟磁性薄
膜の飽和ｍ束密度Ｂｓを、第１０図に抗磁力Ｈｃおよび
実効透磁率μを示す。これらの図より、遷移金属薄膜層
２の膜厚が１〜５０ｎｍ、即ちセンダスト系合金薄膜層
３の膜厚を１とした場合、遷移金属薄膜層２の膜厚が０
．００１〜０．０５の範囲に設定 ２
してあれば、飽和磁束密度Ｂｓ、抗磁力Ｈｅともに良好
な値が得られることがわかる。
実施例４ （ｉＪ：移金属としてＣｒを用いた例）遷移
金属として純度９９．９％のＣｒを用いて実施例２と同
様にして積層軟磁性薄膜を作成し、飽和磁束密度Ｂｓ、
抗磁力Ｈｃオよび実効透磁率μを測定した。
第１１図にＣｒ薄膜層２の厚さを変化させた積層軟磁性
薄膜の飽和磁束密度Ｂｓを、第１２図に抗磁力Ｈｃおよ
び実効透磁率μを示す。これらの図より、遷移金属薄膜
層２の膜厚がｌ〜１１００ｎ、即ちセンダスト系合金薄
膜層３の膜厚を１とした場合、遷移金属薄膜層２の膜厚
が０．０［ｌｌ−０，１の範囲に設定してあれば、飽和
磁束密度Ｂｓ、抗磁力Ｈｃともに良好な値が得られるこ
とがわかる。
参考のため、実施例２〜４と同一の条件で基板１へ厚さ
１１Ｉｍのセンダスト系合金薄膜層３を直接成膜し、磁
気特性を測定した。飽和磁束密度Ｂｓを第７図、第９図
および第１１図に示す。また、抗磁力Ｈｃと実効透磁率
μとを第８図、第１０図およ３
び第１２図に示す。
実施例５（遷移金属としてパーマロイ系合金を用いた例
）
表面を光学研磨した５ ｍｍＸ ｌｏｍｍＸ １ ｍｍ
サイズの結晶化ガラス基板１の表面に、高周波マグネト
ロンスパッタ装置を用いてパーマロイ系合金薄膜層２を
成膜し、続いてその表面に厚さｌＩＩｍのセンダスト系
合金薄膜層３を成膜して積層軟磁性薄膜を作成する。薄
膜層２の厚さは５．１０．３０．１１００ｎに設定した
。パーマロイ系合金の組成はＮ１が８１重量％、Ｆｅが
１９重量％である。スパッタ条件および熱処理条件は実
施例２と同一である。
第１３図にパーマロイ系合金薄膜層２の厚さを変化させ
た積層軟磁性薄膜の飽和磁束密度Ｂｓを、第１４図に抗
磁力Ｈｅおよび実効透磁率μを示す。
これらの図より、遷移金属薄膜層２の膜厚が５〜１１０
０ｎ、即ちセンダスト系合金薄膜層３の膜厚を１とした
場合、遷移金属薄膜層２の膜厚が０．００５〜０．１の
範囲に設定してあれば、飽和磁束密度Ｂｓ、抗磁力Ｈｃ
ともに良好な値が得られることがわか４
る。
参考のため、実施例２〜４と同一の条件で基板１へ厚さ
ｌｐｍのセンダスト系合金薄膜層３のみを直接成膜し、
その磁気特性を測定した。飽和磁束密度Ｂｓ、抗磁力Ｈ
ｅおよび実効透磁率μを第１３図および第１４図に示す
。また、そのＢ−８曲線は第１６図と略同じであった。
第１５図は実施例１〜５をまとめたもので、各実施例に
おいて遷移金属薄膜層２の厚みを変えて作成した磁性薄
膜のうち、抗磁力Ｈｃの最低値同士を比較した図である
。同図によればＦｅが最も良好な値を示しているが、Ｎ
ｉ、 Ｃｏ、 Ｃｒおよびパーマロイの何れにも、下地
層による顕著な抗磁力抑制効果が見られる。
これらの結果より、基板１とセンダスト系合金３との間
にわずか１７ｎｍ〜数十ｎｍの遷移金属薄膜層２を設け
るだけで磁気特性が大きく改善されることがわかる。特
に抗磁力Ｈｃと実効透磁率μにおいて顕著である。The present invention will be explained in detail below. FIG. 1 shows an embodiment of a laminated soft magnetic thin film to which the present invention is applied. This laminated soft magnetic thin film is obtained by sequentially laminating a transition metal thin film layer 2 and a Fe-Al-Si ternary sendust alloy thin film layer 3 on the surface of a substrate 1. The composition of the sendust alloy thin film layer 3 is 85% by weight of Fe and 5.4% of A1.
% by weight, Si is 9.6% by weight. Experimental examples of the present invention are as follows. Example 1 (Example using Fe as the transition metal) A Fe thin film layer 2 with a purity of 99.9% was formed on the surface of a crystallized glass substrate l with a size of 10 mm x ID mm x 1 mm, the surface of which was optically polished, using a high frequency magnetron sputtering device. , and then a sendust alloy thin film layer 3 having a thickness of 111 m is formed on the surface thereof to create a laminated soft magnetic thin film. The thickness of the Fe thin film layer 2 is 1.5.1O150,100,500,1
It was set to 1000n. Sputtering conditions are RF power 80
0W, argon gas pressure car, 2X10-2 Torr. The obtained laminated soft magnetic thin film was heat treated in vacuum at 600 T for 1 hour, and then the saturation magnetic flux density Bs and coercive force Hc were measured using a vibrating sample magnetometer. Effective permeability μ
was measured using the figure-eight coil method. FIG. 2 shows a B-H curve of a laminated soft magnetic thin film in which the Fe thin film layer 2 is 1onn+ and the Sendust alloy thin film layer 3 is llIm. The magnetic properties when the Fe thin film layer is 10 nm shown in the same figure are Bs=12000 Gauss, Hc=0.05 elsde, μ=500 Off=1 MHz). FIG. 3 shows the saturation magnetic flux density Bs of laminated soft magnetic thin films with varying thicknesses of the Fe thin film layer 2, and FIG. 4 shows the coercive force Hc and effective magnetic permeability μ. These figures show that when the thickness of the Fe thin film layer 2 is 1 to 1100 nm, that is, the thickness of the sendust alloy thin film layer 3 is 1, the thickness of the Fe thin film layer 2 is 0.001 to 1100 nm.
It can be seen that if the value is set within the range of 0.1, good values can be obtained for both the saturation magnetic flux density Bs and the coercive force He. Next, using the same film forming method as above, a Fe thin film layer 2 of 20nm was formed.
m and the thickness of the sendust alloy thin film layer 3 to be 0.
Change it to 1.0.2.0.5, 1.5.10gm,
A laminated magnetic alloy film was created. After similar heat treatment, the saturation magnetic flux density Bs, coercive force He, and effective magnetic permeability μ were measured. FIG. 5 shows the saturation magnetic flux density Bs of laminated soft magnetic thin films with varying thicknesses of the sendust alloy thin film 3, and FIG. 6 shows the coercive force Hc and effective magnetic permeability μ. From these figures, the thickness of the sendust alloy thin film layer 3 is 0.2 to 1O.
μm, that is, the film thickness of the sendust alloy thin film layer 3 is set to 1, and if the film thickness of the Fe thin film layer 2 is set in the range of 0.002 to 0.1, the saturation magnetic flux density Bs, coercive force Hc It can be seen that both the effective magnetic permeability and the effective magnetic permeability U are 0. Among them, the magnetic properties when the thickness of the centast alloy thin film layer 3 is set to 1 μm are B
Good values were obtained: s=12000 Gauss, Hc=0.05 Oersted, μ=500Off・IMoz). For reference, 111 m of centast alloy was directly formed on the substrate 1 without providing the Fe thin film layer 2, and its magnetic properties were determined. FIG. 16 shows the B-8 curve. Measured values of the saturation magnetic flux density Bs, coercive force Hc, and effective magnetic permeability H of this sample are shown in FIGS. 3 and 4. Example 2 [Example using Ni as the transition metal] A Ni thin film layer 2 with a purity of 999% is formed on the surface of a crystallized glass substrate 1 with a size of 5 mm x 10 mm x 1 mm, the surface of which has been optically polished, using a high frequency magnetron sputtering device. Form a film,
Subsequently, a sendust alloy thin film layer 3 having a thickness of IIIm is formed on the surface to form a laminated soft magnetic thin film. The thickness of the transition metal thin film layer 2 was set to 1.5.10.30, 100r+m. The sputtering conditions were RF power of 600 W and argon gas pressure of 1.0XlO-2 Torr. After the obtained laminated soft magnetic thin film was subjected to the same heat treatment as in Example 1, the saturation magnetic flux density Bs, coercive force Hc and 1, and effective magnetic permeability μ were determined. FIG. 7 shows the saturation magnetic flux density Bs of laminated soft magnetic thin films with varying thicknesses of the Ni thin film layer 2, and FIG. 8 shows the coercive force Hc and effective magnetic permeability μ. From these figures, the transition metal thin film layer 2
The film thickness is 1 to 50 nm, that is, the sendust alloy thin film layer 3
When the film thickness of the transition metal thin film layer 2 is 1, the film thickness of the transition metal thin film layer 2 is 0.
It can be seen that good values can be obtained for both the saturation magnetic flux density Bs and the coercive force Hc if the value is set in the range of 001 to 0.05. Example 3 (Example using Co as the transition metal) A laminated soft magnetic thin film was prepared in the same manner as in Example 2 using Go with a purity of 99.7% as the transition metal, and the saturation magnetic flux density Bs, coercive force Hc, and Effective magnetic permeability 11 was measured. FIG. 9 shows the saturation m-flux density Bs of laminated soft magnetic thin films with varying thicknesses of the Co thin film layer 2, and FIG. 10 shows the coercive force Hc and effective magnetic permeability μ. From these figures, when the thickness of the transition metal thin film layer 2 is 1 to 50 nm, that is, the thickness of the sendust alloy thin film layer 3 is 1, the thickness of the transition metal thin film layer 2 is 0.
．． It can be seen that good values can be obtained for both the saturation magnetic flux density Bs and the coercive force He if it is set in the range of 001 to 0.05. Example 4 (iJ: Example using Cr as the transition metal) A laminated soft magnetic thin film was prepared in the same manner as in Example 2 using 99.9% pure Cr as the transition metal, and the saturation magnetic flux density Bs,
The coercive force Hc and the effective magnetic permeability μ were measured. FIG. 11 shows the saturation magnetic flux density Bs of laminated soft magnetic thin films with varying thicknesses of the Cr thin film layer 2, and FIG. 12 shows the coercive force Hc and effective magnetic permeability μ. From these figures, when the thickness of the transition metal thin film layer 2 is l to 1100n, that is, the thickness of the sendust alloy thin film layer 3 is 1, the thickness of the transition metal thin film layer 2 is 0.0 [ll-0 , 1, good values can be obtained for both the saturation magnetic flux density Bs and the coercive force Hc. For reference, a sendust alloy thin film layer 3 having a thickness of 11 Im was directly formed on the substrate 1 under the same conditions as Examples 2 to 4, and the magnetic properties were measured. The saturation magnetic flux density Bs is shown in FIGS. 7, 9, and 11. Further, the coercive force Hc and the effective magnetic permeability μ are shown in FIGS. 8, 10, 3, and 12. Example 5 (example using permalloy alloy as the transition metal) The surface was optically polished to 5 mm x lomm x 1 mm.
A permalloy alloy thin film layer 2 is formed on the surface of a crystallized glass substrate 1 of the same size using a high frequency magnetron sputtering device, and then a sendust alloy thin film layer 3 of a thickness lIIm is formed and laminated on the surface. Create a soft magnetic thin film. The thickness of the thin film layer 2 was set to 5.10.30.1100 nm. The composition of the permalloy alloy is 81% by weight of N1 and 19% by weight of Fe. The sputtering conditions and heat treatment conditions are the same as in Example 2. FIG. 13 shows the saturation magnetic flux density Bs of the laminated soft magnetic thin film in which the thickness of the permalloy alloy thin film layer 2 is changed, and FIG. 14 shows the coercive force He and effective magnetic permeability μ. From these figures, the thickness of the transition metal thin film layer 2 is 5 to 110 mm.
0n, that is, the thickness of the sendust alloy thin film layer 3 is 1, and if the thickness of the transition metal thin film layer 2 is set in the range of 0.005 to 0.1, the saturation magnetic flux density Bs and coercive force Hc
It can be seen that good values can be obtained in both cases4. For reference, only the sendust alloy thin film layer 3 with a thickness of lpm was directly deposited on the substrate 1 under the same conditions as in Examples 2 to 4.
Its magnetic properties were measured. Saturation magnetic flux density Bs, coercive force H
e and effective magnetic permeability μ are shown in FIGS. 13 and 14. Moreover, the B-8 curve was approximately the same as that in FIG. FIG. 15 summarizes Examples 1 to 5, and is a diagram comparing the lowest values of coercive force Hc among magnetic thin films created by changing the thickness of the transition metal thin film layer 2 in each example. According to the figure, Fe shows the best value, but N
A remarkable coercive force suppressing effect by the underlayer is seen in all of i, Co, Cr, and permalloy. These results show that the magnetic properties can be greatly improved by simply providing the transition metal thin film layer 2 with a thickness of only 17 nm to several tens of nm between the substrate 1 and the Sendust alloy 3. This is particularly noticeable in the coercive force Hc and the effective magnetic permeability μ.
以上詳細に説明したように本発明の積層軟磁性薄膜は、
飽和磁束密度および実効透磁率が高く、抗磁力が低いと
いう優れた軟磁気特性を有している。その磁気特性は膜
厚が１〜２ＩＩｍ以下と極めて薄い場合でも確保される
。従って、この積層軟磁性薄膜は高密度記録用磁気ヘッ
ドのコア材に最適である。As explained in detail above, the laminated soft magnetic thin film of the present invention is
It has excellent soft magnetic properties such as high saturation magnetic flux density, high effective magnetic permeability, and low coercive force. The magnetic properties are ensured even when the film thickness is extremely thin, such as 1 to 2 II m or less. Therefore, this laminated soft magnetic thin film is most suitable for the core material of a magnetic head for high-density recording.
第１図は本発明を適用する積層軟磁性薄膜の断面図、第
２図〜第１５図は本発明の積層軟磁性薄膜の実施例の磁
気特性を示す図、第１６図は従来の磁性薄膜の磁気特性
を示す図である。
１・・・基板 ２−・・遷移金属薄膜層３・
・・センダスト系合金薄膜層FIG. 1 is a cross-sectional view of a laminated soft magnetic thin film to which the present invention is applied, FIGS. 2 to 15 are diagrams showing magnetic properties of examples of the laminated soft magnetic thin film of the present invention, and FIG. 16 is a conventional magnetic thin film. FIG. 1... Substrate 2-... Transition metal thin film layer 3.
...Sendust alloy thin film layer
Claims (10)
であるセンダスト系合金の薄膜層が積層されていること
を特徴とする積層軟磁性薄膜。1. The main components are Fe, Al and Si on the transition metal thin film layer.
A laminated soft magnetic thin film characterized by laminating thin film layers of a sendust alloy.
であるセンダスト系合金の薄膜層が積層され、飽和磁束
密度が１００００ガウス以上、抗磁力が０．５エルステ
ッド以下で、周波数１ＭＨｚにおける実効透磁率が１０
００以上であることを特徴とする積層軟磁性薄膜。2. The main components are Fe, Al and Si on the transition metal thin film layer.
Thin film layers of Sendust alloy are laminated, and the saturation magnetic flux density is 10,000 Gauss or more, the coercive force is 0.5 Oe or less, and the effective magnetic permeability at a frequency of 1 MHz is 10.
00 or more.
層の膜厚との比率が１：０．００１〜０．１であること
を特徴とする特許請求の範囲第１項または第２項記載の
積層軟磁性薄膜。3. Claim 1 or 2, wherein the ratio of the thickness of the sendust alloy thin film layer to the thickness of the transition metal thin film layer is 1:0.001 to 0.1. Laminated soft magnetic thin film.
特徴とする特許請求の範囲第１項または第２項記載の積
層軟磁性薄膜。4. 3. The laminated soft magnetic thin film according to claim 1, wherein the transition metal is Fe with a purity of 97% or more.
特徴とする特許請求の範囲第１項または第２項記載の積
層軟磁性薄膜。5. 3. The laminated soft magnetic thin film according to claim 1, wherein the transition metal is Ni with a purity of 97% or more.
特徴とする特許請求の範囲第１項または第２項記載の積
層軟磁性薄膜。6. 3. The laminated soft magnetic thin film according to claim 1, wherein the transition metal is Co with a purity of 97% or more.
特徴とする特許請求の範囲第１項または第２項記載の積
層軟磁性薄膜。7. 3. The laminated soft magnetic thin film according to claim 1, wherein the transition metal is Cr with a purity of 97% or more.
１５〜２５重量％および８重量％以下のＭｏからなるパ
ーマロイ系合金であることを特徴とする特許請求の範囲
第１項または第２項記載の積層軟磁性薄膜。8. Claim 1 or 2, wherein the transition metal is a permalloy alloy consisting of 75 to 85% by weight of Ni, 15 to 25% by weight of Fe, and 8% by weight or less of Mo. The laminated soft magnetic thin film described above.
ｉは、それぞれＡｌが２〜８重量％、Ｓｉが６〜１２重
量％、残量がＦｅであることを特徴とする特許請求の範
囲第１項または第２項記載の積層軟磁性薄膜。9. The main components of the sendust alloy are Fe, Al and S.
3. The laminated soft magnetic thin film according to claim 1, wherein i is 2 to 8% by weight of Al, 6 to 12% by weight of Si, and the remaining amount is Fe.
スト系合金にＣｒ、Ｎｂ、Ｎｉ、Ｒｕ、Ｃｏ、Ｔｉ、Ｃ
ｕ、Ｇａ、Ｇｅ、Ｐｄから選ばれる少なくとも１の成分
が５％以下含まれていることを特徴とする特許請求の範
囲第１項または第２項記載の積層軟磁性薄膜。10. The sendust alloy whose main components are Fe, Al and Si include Cr, Nb, Ni, Ru, Co, Ti, and C.
3. The laminated soft magnetic thin film according to claim 1 or 2, wherein the laminated soft magnetic thin film contains 5% or less of at least one component selected from U, Ga, Ge, and Pd.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3365490 | 1990-02-16 | ||
| JP2-33654 | 1990-02-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03263307A true JPH03263307A (en) | 1991-11-22 |
Family
ID=12392438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20892190A Pending JPH03263307A (en) | 1990-02-16 | 1990-08-06 | Laminated layer soft magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03263307A (en) |
-
1990
- 1990-08-06 JP JP20892190A patent/JPH03263307A/en active Pending
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