JPH046179A - Joined body of ceramics substrate and copper plate - Google Patents
Joined body of ceramics substrate and copper plateInfo
- Publication number
- JPH046179A JPH046179A JP2106351A JP10635190A JPH046179A JP H046179 A JPH046179 A JP H046179A JP 2106351 A JP2106351 A JP 2106351A JP 10635190 A JP10635190 A JP 10635190A JP H046179 A JPH046179 A JP H046179A
- Authority
- JP
- Japan
- Prior art keywords
- copper plate
- ceramic substrate
- groove
- joined body
- joined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 59
- 239000010949 copper Substances 0.000 title claims abstract description 59
- 239000000919 ceramic Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000010304 firing Methods 0.000 claims description 9
- 239000011800 void material Substances 0.000 claims description 7
- 238000005304 joining Methods 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 18
- 229910000831 Steel Inorganic materials 0.000 description 8
- 239000010959 steel Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- DWKNOLCXIFYNFV-HSZRJFAPSA-N 2-[[(2r)-1-[1-[(4-chloro-3-methylphenyl)methyl]piperidin-4-yl]-5-oxopyrrolidine-2-carbonyl]amino]-n,n,6-trimethylpyridine-4-carboxamide Chemical compound CN(C)C(=O)C1=CC(C)=NC(NC(=O)[C@@H]2N(C(=O)CC2)C2CCN(CC=3C=C(C)C(Cl)=CC=3)CC2)=C1 DWKNOLCXIFYNFV-HSZRJFAPSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミックス基板と銅板との接合体に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a joined body of a ceramic substrate and a copper plate.
従来、セラミックス回路基板は、パワートランジスタモ
ジュールや高周波電子機器等に広く使用されるようにな
って来ており、ここで使用される基板回路は主に銅板が
使用されている。セラミックス基板と銅板との接合方法
に糧々提案されており、例えば、特開昭５２−３７９１
４号公報及び同６０−１５５５８０号公報等に記載され
ている接合体は、不活性ガス雰囲気中で銅の融点１０８
３℃より低い温度で、平滑なセラミックス基板と銅板と
を直接接合するものである。このような方法では、加熱
時、セラミックス基板、あるいは銅板から発生するガス
が、セラミックス基板と銅板との接合面に封止され、そ
のため、銅板の一部にフクレが屡々生じ、製品の歩留が
低下していた。Conventionally, ceramic circuit boards have come to be widely used in power transistor modules, high frequency electronic devices, etc., and the board circuits used here are mainly made of copper plates. Many proposals have been made for bonding methods between ceramic substrates and copper plates, such as Japanese Patent Laid-Open No. 52-3791
The bonded bodies described in Publication No. 4 and Publication No. 60-155580 have a melting point of copper of 108 in an inert gas atmosphere.
A smooth ceramic substrate and a copper plate are directly bonded at a temperature lower than 3°C. In this method, gas generated from the ceramic substrate or copper plate during heating is sealed in the bonding surface between the ceramic substrate and the copper plate, which often causes blisters on some parts of the copper plate, reducing the product yield. It was declining.
このような問題点に対し、様々な対策が試行されて米、
例えば、ＵＳＦ４４０９２７８号公報、特開昭６２−７
２５７６号公報及び％開昭６２−２８８１７７号公報等
がある。 ここで、ＵＳＰ４４０９２７８号公報及び特
開昭６２−７２５７６号公報は、セラミックス基板と金
属板が接合する面一こ溝が形成されているセラミックス
−金属接合体であり、この接合体の製造時加熱により発
生するガスによるフクレは生じないが、溝部に空隙が残
ってし丈い、以後、パターン成形時に行なわれるエツチ
ング工程で、エツチング液が溝から浸入するため、実用
的に問題があった。また、特開昭６２−２８８１７７号
公報は、圧縮力によって溝を有する金属板による接合体
が提案されているが、これは接合面の接合強度が均一で
なく、また銅板表面に凸凹が生じ−るため、後工程番こ
おけるチップ搭載歩留が低下したり、ワイヤーボンデン
グ不良を生じる等、実用的に問題があった。Various countermeasures have been tried to address these problems, and
For example, USF4409278, JP 62-7
No. 2576 and %Kokai No. 62-288177. Here, USP 4409278 and JP 62-72576 disclose a ceramic-metal bonded body in which a groove is formed on the same surface where a ceramic substrate and a metal plate are bonded. Although no blistering occurs due to the generated gas, voids remain in the grooves, which poses a practical problem because the etching solution enters through the grooves during the subsequent etching process performed during pattern formation. Furthermore, Japanese Patent Application Laid-Open No. 62-288177 proposes a bonded body using metal plates having grooves formed by compressive force, but the bonding strength of the bonded surfaces is not uniform, and unevenness occurs on the surface of the copper plates. As a result, there are practical problems such as a decrease in chip mounting yield during post-processing and wire bonding defects.
本発明の目的は、従来技術が有していた前述の問題点を
解決しようとするものであり、従来全く知られていなか
った新規なセラミックス基板と銅板との接合体を提供す
るものである。An object of the present invention is to solve the above-mentioned problems that the prior art had, and to provide a new joined body of a ceramic substrate and a copper plate, which has been completely unknown heretofore.
本発明は、前述の問題点を解決すべくなされたものであ
り、銅板と接合する面に溝状物を有しているセラミック
ス基板と銅板とを素材とし、焼成後、前記溝状物が実質
的に閉塞されていることを特徴とするセラミックス基板
と銅板との接合体を提供するものである。The present invention has been made to solve the above-mentioned problems, and is made of a ceramic substrate and a copper plate that have grooves on the surface to be bonded to the copper plate, and after firing, the grooves are substantially removed. The present invention provides a joined body of a ceramic substrate and a copper plate, which is characterized in that the ceramic substrate and the copper plate are closed.
不発明番こよれば、製造時の加熱番こより、発生するガ
スによるフクレは全く見られＹ、Ｋ ＜ １．；るばか
りですく、電子部品として使用された際のヒートサイク
ルによる接合強度の劣化も著しく改善され、実用的に極
めて有用なセラミックス基と銅板との接合体を得ること
ができるのである。以下本発明の構成要因について説明
する。According to the inventive point, no blisters were observed due to the gas generated during the heating process during manufacturing.Y, K < 1. In addition, deterioration in bonding strength due to heat cycles when used as an electronic component is significantly improved, making it possible to obtain a bonded body of a ceramic base and a copper plate that is extremely useful for practical purposes. The constituent factors of the present invention will be explained below.
本発明でいう銅板２とは、特に制限されるべきものでは
す＜、いづれの銅板も使用でき、例えば、無酸素鋼ある
いは散票を３０〜３０００ｐｐｍ。The copper plate 2 referred to in the present invention is not particularly limited. Any copper plate can be used, for example, oxygen-free steel or powder with a concentration of 30 to 3000 ppm.
好ましくは１００〜７００ｐｐｍ含有するタフピッチ電
解銅板である。鋼板の板厚は特に規定されるべきもので
はなく、いづれの板厚でも良いが、好ましくは０．０５
〜０．４０％、さらに好ましくは０．２〜０．３ ％で
あり、セラミックス基板１と接合される面は平滑であっ
ても、ざらζこ微少な凸凹を形成していても良い。Preferably, it is a tough pitch electrolytic copper plate containing 100 to 700 ppm. The thickness of the steel plate is not particularly specified and may be any thickness, but preferably 0.05
~0.40%, more preferably 0.2~0.3%, and the surface to be bonded to the ceramic substrate 1 may be smooth or may have slight irregularities.
またセラミックス基板１とは、いづれのセラミックスに
よる基板でも使用され、例えば、醗化物系セラミックス
として、アルミナ、醒化ベリリウム等があり、非醗化物
系セラミックスとしては、窒化アルミニウム、窒化ケイ
素及び炭化ケイ素等があり、中でもアルミナ及び窒化ア
ルミニウムが好ましく、％にアルミナが好適ζこ使用さ
れる。セラミックス基板の板厚は特に制限されるもので
はないが、例えば０．３〜１．２％、好ましくは０．５
〜０．８Ｘである。さらにセラミックス基板１には溝状
物３が形成されており、これによって、セラミックス基
板と銅板とから発生するガスを逸散せしめることができ
るのである。溝状物の形状は特に規定すべきものではな
く、いづれの形状でも良いが、例えば、その断面形状が
円弧状、四角状及び三角状等で、中でも円弧状が好適で
ある。溝状物は互いに平行であっても、放射状もしくは
ランダムに形成されていても良いが、平行−こ形成され
ていることが好ましい。また溝状物の寸法は、使用する
セラミックス基板と銅板の材質、焼成雰囲気等により、
適宜決定されるべきものであり、特に溝状物の深度が犬
となると、焼成後空隙が残ってしまい、また小となると
、焼成時ガスの逸散が不完全となるため、慎重に決定さ
れるべきものであるが、一般的には１〜５０μ、好まし
くは３〜２０μ、特に４〜９μ、巾は１〜５００μ、打
抜しくは５０〜２００β、さら４こピッチは０．５〜１
０％、好ましくは１〜５〜、竹に１〜３へが好ましい。Furthermore, the ceramic substrate 1 can be any substrate made of ceramics. For example, examples of fluoride-based ceramics include alumina and aluminized beryllium, and examples of non-fluoride-based ceramics include aluminum nitride, silicon nitride, silicon carbide, etc. Among them, alumina and aluminum nitride are preferred, and alumina is preferably used. The thickness of the ceramic substrate is not particularly limited, but is, for example, 0.3 to 1.2%, preferably 0.5%.
~0.8X. Furthermore, a groove-like member 3 is formed in the ceramic substrate 1, which allows gas generated from the ceramic substrate and the copper plate to dissipate. The shape of the groove-shaped object is not particularly limited and may be any shape, but for example, the cross-sectional shape may be arcuate, square, or triangular, with arcuate shapes being preferred. The grooves may be parallel to each other or may be formed radially or randomly, but it is preferable that the grooves be formed parallel to each other. In addition, the dimensions of the grooves will vary depending on the materials of the ceramic substrate and copper plate used, the firing atmosphere, etc.
This should be determined appropriately. In particular, if the depth of the groove is too large, voids will remain after firing, and if it is too small, the gas dissipation during firing will be incomplete, so it must be determined carefully. Generally 1 to 50μ, preferably 3 to 20μ, especially 4 to 9μ, width 1 to 500μ, punching 50 to 200β, and pitch of 4 squares 0.5 to 1
0%, preferably from 1 to 5, preferably from 1 to 3 for bamboo.
さらに、銅板２とセラミックス基板１との接合方法は、
従来採用されている例えば、直接接合方法及び活性金属
方法等いづれかの方法を使用できる。直接接合方法とし
ては、例えば接合雰囲気は無酸素銅板を使用した際は、
１０〜１１，０００ ｐｐｍ程度の微量の酸素の存在下
、タフピッチ電解銅板のような酸素含有−を使用した場
合は、非酸化性雰囲気下、９００〜１０８３℃、好まし
くは１０６３〜１０８０℃で加熱し、加熱保持時間は概
ね１０秒〜１０分である。この接合条件により、前記セ
ラミックス基板１に形成された溝３１こより、セラミッ
クス基板１と銅板２とから発生するガスは逸散され、焼
成後、セラミックス基板１と鋼板２との界面に残留する
ことは無く、製品収率は著しく向上するのである。さら
ζこ、焼成時において、セラミックス基板１と銅板２と
の界面に生じたソルダーが、徐々にセラミックス基板１
に形成された溝状物３に流れ込むことにより、溝は次第
正こ閉塞され、加熱終了時には実質的に閉塞され、銅板
とセラミックス基板との界面部は密着された状態となる
。また、活性金属方法とは、例えばセラミックス基板と
銅板との界面に、主に（ＡｇＣｕ−Ｔｉ）系等の活性金
属により接合するものである。Furthermore, the method of joining the copper plate 2 and the ceramic substrate 1 is as follows.
Any conventionally employed method, such as a direct bonding method or an active metal method, can be used. For direct bonding methods, for example, when oxygen-free copper plates are used as the bonding atmosphere,
In the presence of a trace amount of oxygen of about 10 to 11,000 ppm, if an oxygen-containing material such as a tough pitch electrolytic copper plate is used, it should be heated at 900 to 1083°C, preferably 1063 to 1080°C, in a non-oxidizing atmosphere. The heating holding time is approximately 10 seconds to 10 minutes. Due to these bonding conditions, gas generated from the ceramic substrate 1 and the copper plate 2 is dissipated through the groove 31 formed in the ceramic substrate 1, and does not remain at the interface between the ceramic substrate 1 and the steel plate 2 after firing. The product yield is significantly improved. Furthermore, during firing, the solder generated at the interface between the ceramic substrate 1 and the copper plate 2 gradually spreads to the ceramic substrate 1.
By flowing into the groove-shaped material 3 formed in the groove, the groove is gradually closed, and when heating is completed, the groove is substantially closed, and the interface between the copper plate and the ceramic substrate is brought into close contact. Moreover, the active metal method is a method in which, for example, an active metal such as an (AgCu-Ti) system is used to join the interface between a ceramic substrate and a copper plate.
このようにして得られた接合体は、電子部品として使用
された際の温度差の大きな変化の繰返しくヒートサイク
ル）に対しても、その接合強度は低下することなく、長
期間に亘って使用することができるが、さらに、鋼板２
のセラミックス基板ｌとの接合界面の端部のうち、少；
くとも一部ｊこ空隙構造４を有する接合体とすることで
、さらに耐ヒートサイクル性能が向上するのである。空
隙４の形式方法は特に規定されるものではないが、例え
ば、物理的に切削して形成する方法、また過酸化水素、
塩化第２鉄水溶液及び過硫醗アンモン等鋼を化学的に腐
蝕させて形成する方法等により得られる。第４図（１）
〜（３）に示したように、接合体を平面的に見た場合の
空隙部４は０．００５〜２ｔ、好ましくは０．０１〜１
九、また第３図に示したように、接合体を断面的に見た
場合の空隙深度は０．５〜２０μ、好ましくは１〜１０
μである。前記空隙を付与する工程（ま特に制限はなく
、例えば前記接合体を調製する工程後でも、また接合体
の銅板をエツチング加工した後でも、いづれでも良い。The bonded body obtained in this way can be used for a long period of time without decreasing its bonding strength even when subjected to repeated heat cycles with large temperature differences when used as an electronic component. However, in addition, steel plate 2
Of the edges of the bonding interface with the ceramic substrate l, a small portion;
By forming a bonded body having at least a portion of the void structure 4, the heat cycle resistance performance is further improved. The form of the void 4 is not particularly defined, but for example, it may be formed by physically cutting, or by hydrogen peroxide,
It can be obtained by chemically corroding steel using an aqueous ferric chloride solution and ammonium persulfate. Figure 4 (1)
~ (3) As shown in (3), the void portion 4 when the joined body is viewed from above has a thickness of 0.005 to 2 t, preferably 0.01 to 1 t.
9. Also, as shown in Fig. 3, the void depth when the joined body is viewed cross-sectionally is 0.5 to 20μ, preferably 1 to 10μ.
μ. The step of providing the voids (well, there are no particular restrictions; for example, the process may be performed either after the step of preparing the bonded body or after etching the copper plate of the bonded body).
このようにして得られたセラミックス基板と鋼板との接
合体は、生産性が優れ、また製品としてもと一トサイク
ルＩこ対しても、著しく強靭であるという実用的に極め
て有用な接合体であり、業界に寄与する所犬である。The thus obtained joined body of the ceramic substrate and the steel plate is a practically extremely useful joined body that has excellent productivity and is extremely strong as a product even after one cycle. It is a house dog that contributes to the industry.
以下実施例によりさらに具体的ｔこ説明するが、本発明
は、実施例１こ限定されるべきものではないことは言う
までもない。The present invention will be explained in more detail with reference to Examples below, but it goes without saying that the present invention should not be limited to Example 1.
実施例−１
アルミナグリーンシート（アルミナ９６チ、厚さ０．６
３５）に２１間隔で、平行な深さ１８μの円弧状の溝を
形成し、焼成後５０１角になる様に裁断し、しかる後に
焼結して、溝間隔１．８鬼、深さ７〜９μのアルミナ焼
結体を得た。（焼結体黒焼結体厖１の溝の形成されてい
る面にタフピッチ電解銅板（５０１角、厚さＯ−３ｎＸ
、）を予め窒素ガス雰囲気ζこ調整されたトンネル式電
熱焼成炉に入れ、加熱スピード５０℃／分で昇温加熱し
、最高加熱温度１０７３℃で３分間保持し、その後冷却
して接合体（接合体２戦１）を得た。Example-1 Alumina green sheet (alumina 96 cm, thickness 0.6
35), form parallel arc-shaped grooves with a depth of 18μ at 21 intervals, cut them into 501 squares after firing, and then sinter them to form grooves with a groove interval of 1.8 mm and a depth of 7~ A 9μ alumina sintered body was obtained. (Tough pitch electrolytic copper plate (501 square, thickness O-3n
, ) was placed in a tunnel-type electric firing furnace in which a nitrogen gas atmosphere was adjusted in advance, heated at a heating speed of 50°C/min, held at a maximum heating temperature of 1073°C for 3 minutes, and then cooled to form a bonded body ( Two zygotes (1) were obtained.
次いで、接合体亮１の銅表面を研磨し、パターニング用
レジストを印刷し、熱硬化後、塩化第二銅水溶液に浸漬
エツチングし、苛性ソーダ水浴液によりレジストを剥離
し、パターンを形成した接合体（接合体席１１）を得、
さらに、接合体魔１１の銅板部を過硫酸アンモニウム水
溶液に製錬させ、空隙部（巾１０〜２０μ、深さ１μ）
を有する接合体（接合体！、１１１）を得た。Next, the copper surface of the bonded body Ryo 1 was polished, a patterning resist was printed, and after heat curing, it was etched by immersion in a cupric chloride aqueous solution, and the resist was peeled off with a caustic soda bath solution to form a patterned bonded body ( The zygote seat 11) is obtained,
Furthermore, the copper plate part of the zygote demon 11 was smelted into an ammonium persulfate aqueous solution, and the voids (width 10 to 20 μm, depth 1 μm)
A zygote (zygote!, 111) having the following was obtained.
実施例−２
実施例−１で調製した焼結体盃１の溝の形成されている
面には、活性金属粉（Ａｇ−Ｃｕ−Ｔｉ ；７１．５−
２７．５−１ ）混合ペーストを３０μの厚さでパター
ン印刷して（他の面には一面に印刷して、各々の面に）
、無酸素銅板（５０へ角、厚さ０３１）を載置し、Ｉ
Ｋ９／ ｃｒ！加圧条件下１０’Ｔｏｒｒの真空中、８
５０℃で１０分間加熱し、その後冷却して接合体（接合
体点２）を得た。Example-2 Active metal powder (Ag-Cu-Ti; 71.5-
27.5-1) Print the mixed paste in a pattern with a thickness of 30μ (on each side, print on the other side)
, place an oxygen-free copper plate (50 square, thickness 031),
K9/cr! In a vacuum of 10'Torr under pressurized conditions, 8
It was heated at 50° C. for 10 minutes and then cooled to obtain a joined body (joined body point 2).
次いで、接合体点２を実施例−１と同様にして、エツチ
ング処理して、パターンを形成した接合体（接合偉人２
１）ケ得た。Next, the bonded body point 2 was etched in the same manner as in Example 1 to form a patterned bonded body (bonded great figure 2).
1) Got it.
比較例−１
実施例−１１こおいて、溝Ｙ［しないアルミナグリーン
シートを使用した以外、実施例−１と同じ方法により焼
結体（焼結偉人２）を得、また、銅板との接合体（接合
体＆、３）とパターンを有する接合体（接合体＆３１）
をそれぞれ得た。Comparative Example-1 A sintered body (Sintered Iijin 2) was obtained by the same method as in Example-1 except that an alumina green sheet without groove Y was used in Example-11. Body (zygote &, 3) and zygote with pattern (zygote & 31)
were obtained respectively.
比較例−２
実施例−２において、溝を肩しないアルミナグリーンシ
ートを使用した以外、実施例−２と同じ方法により焼結
体（焼結偉人２）を得、また銅板との接合体（接合体＆
４）とパターンを有する接合体（接合体嶌４１）をそれ
ぞれ得た。Comparative Example 2 In Example 2, a sintered body (Sintered Iijin 2) was obtained by the same method as in Example 2, except that an alumina green sheet without grooves was used, and a bonded body with a copper plate (bonded body) was obtained. body&
4) and a zygote having a pattern (zygote 41) were obtained.
比較例−３特開昭６２−２８８１７７の実施例比較例−
１において、銅板のアルミナ基板と接合する面に、巾１
００μ、深さ３０μで断面がほぼ三角形で、間隔が２九
の溝を金型の圧縮力により形成したタフピッチ電解銅板
を使用した以外、比較例−１と同じ方法により、接合体
（接合体点５）とパターンを有する接合体（接合体颯５
１）をそれぞれ得た。Comparative example-3 Comparative example of the embodiment of JP-A-62-288177-
1, a width of 1
A bonded body (bonded body point 5) and a zygote with a pattern (zygote 5)
1) were obtained.
比較例−４特開昭６２−７２５７６の実施例比較例−１
において、銅板のアルミナ基板と接合下る面に、巾０．
３鬼、深さＯ−１％で、断面がほぼ四角形で間隔が１Ｏ
Ｎとなるような溝を有するタフピッチ電解銅板を使用し
た以外、比較例−１と同じ方法により、接合体（接合体
＆６）とパターンを有する接合体（接合体尤６１）をそ
れぞれ得た。Comparative Example-4 Example of JP-A-62-72576 Comparative Example-1
In this process, a width of 0.0 mm is applied to the surface of the copper plate that will be bonded to the alumina substrate.
3 demons, depth O-1%, cross section is almost square, interval is 10
A joined body (joined body &6) and a joined body having a pattern (joined body 61) were obtained by the same method as in Comparative Example 1 except that a tough pitch electrolytic copper plate having grooves such as N was used.
次に、接合体／に１〜６の製品化収率及び接合体の外観
を表−１に、得られた接合体、尤１１〜６１及び１１１
の鋼面の表面粗度及び耐ヒートサイクル性の測定結果を
表−２番こそれぞれ示した。Next, Table 1 shows the commercialization yields and appearance of the zygotes 1 to 6, and the obtained conjugates, 11 to 61 and 111.
Table 2 shows the measurement results of the surface roughness and heat cycle resistance of the steel surface.
表−１
表−２
を記、製品化収率は、各接合体１００枚調査して、ＩＸ
グ以上のフクレがあるものは不良品とした。Table-1 Table-2 is shown, and the product yield is determined by investigating 100 sheets of each zygote.
Items with blisters of more than 100 g were considered defective.
（へ）製品化収率
接合体の工、チノダによるバターｙ形成工程における収
率。(f) Production yield Yield in the processing of the zygote and the butter y formation process by Chinoda.
耐ヒートナイタル
接合体を２５’０ｘ１０分−４１２６’０Ｘ３０分→２
５°０ｘ１０分→−４０’０ｘ３０分を１ナイクルとし
て加熱し、３０．５０及び１００サイクルの耐久試験を
行（・、それぞれ接合体１０枚を使用し、タラワタの発
生枚数を示した。Heat resistant bonded body 25'0 x 10 minutes - 4126'0 x 30 minutes → 2
Durability tests were conducted for 30.50 and 100 cycles by heating at 5°0 x 10 minutes → -40'0 x 30 minutes (10 sheets were used for each bond, and the number of sheets with cod seed generation was shown.
表面粗ｆ ： 接合体の鋼表面の粗度をｆ−７コム表面
粗変計で制定し表−１〜２より明らかなとおり、本発明
による接合体は、フクレ等の不良品の発生も全く見られ
ず、製品化収率も良好で、パターン形成工程に２いても
、高率良くパターン形成ができ、また、その耐ヒートサ
イクル性も極めて良好であり、さらに表面が平滑である
ため、後工程におけるチップ搭載歩留やワイヤーポーデ
ィング性も極めて良好であった。Surface roughness f: The roughness of the steel surface of the joined body was established using an f-7 com surface roughness meter. As is clear from Tables 1 and 2, the joined body according to the present invention has no occurrence of defects such as blisters. The product yield is good, and even if there are two steps in the pattern formation process, the pattern can be formed at a high rate, and its heat cycle resistance is also extremely good. The chip mounting yield and wire podding performance in the process were also extremely good.
第１〜４図は、本発明によるセラミックス基板と銅板と
の接合体の一例を示した概略図であり、第１図はセラミ
ックス基板及び銅板の素材、第２図は接合体、第３図は
空隙構造を有する接合体の断面図であり、第４図は空隙
構造を有する接合体の平面図である。
ここで、１はセラミックス基板、２は銅板、３は溝状物
及び４は空隙部をそれぞれ示している。1 to 4 are schematic diagrams showing an example of a bonded body of a ceramic substrate and a copper plate according to the present invention. FIG. 4 is a sectional view of a bonded body having a void structure, and FIG. 4 is a plan view of the bonded body having a void structure. Here, 1 is a ceramic substrate, 2 is a copper plate, 3 is a groove, and 4 is a gap.
Claims (1)
ス基板と銅板とを素材とし、焼成後、前記溝状物が実質
的に閉塞されていることを特徴とするセラミックス基板
と銅板との接合体。 ２、該セラミックスが、アルミナである特許請求の範囲
第１項記載のセラミックス基板と銅板との接合体。 ３、該銅板がタフピッチ電解銅板である特許請求の範囲
第１項記載のセラミックス基板と銅板との接合体。 ４、該銅板が無酸素銅板である特許請求の範囲第１項記
載のセラミックス基板と銅板との接合体。 ５、該溝状物の溝の深さが１〜５０μ、巾が１〜５００
μ、ピッチが０．５〜１０ｍ／ｍである特許請求の範囲
第１項記載のセラミックス基板と銅板との接合体。 ６、該銅板のセラミックス基板との接合界面端部のうち
、少なくとも一部に空隙構造を有する特許請求の範囲第
１〜５項いづれか記載のセラミックス基板と銅板との接
合体。[Claims] 1. The material is made of a ceramic substrate and a copper plate that have grooves on the surface to be bonded to the copper plate, and the grooves are substantially closed after firing. A bonded body of a ceramic substrate and a copper plate. 2. A joined body of a ceramic substrate and a copper plate according to claim 1, wherein the ceramic is alumina. 3. A joined body of a ceramic substrate and a copper plate according to claim 1, wherein the copper plate is a tough pitch electrolytic copper plate. 4. A joined body of a ceramic substrate and a copper plate according to claim 1, wherein the copper plate is an oxygen-free copper plate. 5. The depth of the groove of the groove-like material is 1 to 50μ, and the width is 1 to 500μ.
The joined body of a ceramic substrate and a copper plate according to claim 1, wherein the pitch is 0.5 to 10 m/m. 6. A joined body of a ceramic substrate and a copper plate according to any one of claims 1 to 5, which has a void structure in at least a part of the end portion of the bonding interface between the copper plate and the ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2106351A JPH046179A (en) | 1990-04-24 | 1990-04-24 | Joined body of ceramics substrate and copper plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2106351A JPH046179A (en) | 1990-04-24 | 1990-04-24 | Joined body of ceramics substrate and copper plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH046179A true JPH046179A (en) | 1992-01-10 |
Family
ID=14431368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2106351A Pending JPH046179A (en) | 1990-04-24 | 1990-04-24 | Joined body of ceramics substrate and copper plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH046179A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4112587A1 (en) * | 2021-06-29 | 2023-01-04 | Heraeus Deutschland GmbH & Co. KG | Method for producing a metal-ceramic substrate though rapid heating |
| CN116496098A (en) * | 2022-01-18 | 2023-07-28 | 上海富乐华半导体科技有限公司 | Ceramic substrate with metal coated on both sides and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387163U (en) * | 1986-11-27 | 1988-06-07 | ||
| JPH01103458U (en) * | 1987-12-28 | 1989-07-12 | ||
| JPH01273749A (en) * | 1988-04-25 | 1989-11-01 | Tokai Rika Co Ltd | Webbing supporting device with variable supporting height |
-
1990
- 1990-04-24 JP JP2106351A patent/JPH046179A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387163U (en) * | 1986-11-27 | 1988-06-07 | ||
| JPH01103458U (en) * | 1987-12-28 | 1989-07-12 | ||
| JPH01273749A (en) * | 1988-04-25 | 1989-11-01 | Tokai Rika Co Ltd | Webbing supporting device with variable supporting height |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4112587A1 (en) * | 2021-06-29 | 2023-01-04 | Heraeus Deutschland GmbH & Co. KG | Method for producing a metal-ceramic substrate though rapid heating |
| JP2023007425A (en) * | 2021-06-29 | 2023-01-18 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Method of manufacturing metal ceramic base material |
| CN116496098A (en) * | 2022-01-18 | 2023-07-28 | 上海富乐华半导体科技有限公司 | Ceramic substrate with metal coated on both sides and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1453089B1 (en) | Semiconductor substrates of high reliability | |
| US7207105B2 (en) | Method for producing an integral ceramic circuit board | |
| KR102151824B1 (en) | Electronic part mounting substrate and method for producing same | |
| EP3048640A1 (en) | Electronic-component-equipped substrate and method for producing same | |
| EP0219254B1 (en) | Joined ceramic-metal composite | |
| JPH01161892A (en) | Ceramics circuit board and its manufacture | |
| JP2004296619A (en) | Circuit board, manufacturing method and power module using the same | |
| JP3863067B2 (en) | Method for producing metal-ceramic bonded body | |
| JPH046179A (en) | Joined body of ceramics substrate and copper plate | |
| JP3419620B2 (en) | Method for manufacturing ceramic circuit board having metal circuit | |
| JP2005129625A (en) | Circuit board with slit and manufacturing method therefor | |
| JP3635379B2 (en) | Metal-ceramic composite substrate | |
| JPH0897554A (en) | Manufacture of ceramic wiring board | |
| JP2001144224A (en) | Metal-ceramic composite substrate | |
| JP3859280B2 (en) | Method for manufacturing aluminum-ceramic composite substrate | |
| JP3708143B2 (en) | Manufacturing method of ceramic wiring board | |
| CN110582166B (en) | Ceramic plate processing method combining DBC and DPC and ceramic substrate | |
| JPH07142858A (en) | Manufacture of ceramic wiring board | |
| JP3219545B2 (en) | Method for manufacturing aluminum oxide substrate having copper circuit | |
| JPH1087385A (en) | Metal-ceramic composite substrate and its production | |
| JPH01201085A (en) | Production of copper-clad ceramic substrate for electronic part | |
| JP2000031609A (en) | Circuit board | |
| JP3830263B2 (en) | substrate | |
| JPH1160343A (en) | Production of joined body | |
| JP3687250B2 (en) | Manufacturing method of holding jig for metal-ceramic composite member and coating agent for holding jig |