JP3419620B2 - Method for manufacturing ceramic circuit board having metal circuit - Google Patents
Method for manufacturing ceramic circuit board having metal circuitInfo
- Publication number
- JP3419620B2 JP3419620B2 JP04514596A JP4514596A JP3419620B2 JP 3419620 B2 JP3419620 B2 JP 3419620B2 JP 04514596 A JP04514596 A JP 04514596A JP 4514596 A JP4514596 A JP 4514596A JP 3419620 B2 JP3419620 B2 JP 3419620B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit board
- substrate
- circuit
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属回路を有するセラ
ミックス回路基板の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a ceramic circuit board having a metal circuit.
【0002】[0002]
【従来の技術】近年、ロボットやモーター等の産業機器
の高性能化に伴い、大電力・高能率インバーター等大電
力モジュールの変遷が進んでおり、半導体素子から発生
する熱も増加の一途をたどっている。この熱を効率よく
放散させるため、大電力モジュール基板では従来より様
々な方法が取られてきた。特に最近、良好な熱伝導を有
するセラミックス基板が利用できるようになったため、
基板上に銅板等の金属板を接合し、回路を形成後、その
ままあるいはメッキ等の処理を施してから半導体素子を
実装する構造も採用されつつある。2. Description of the Related Art In recent years, with the high performance of industrial equipment such as robots and motors, the transition of high power and high efficiency inverters and other high power modules has progressed, and the heat generated from semiconductor elements has also continued to increase. ing. In order to efficiently dissipate this heat, various methods have been conventionally used for high power module substrates. Especially recently, since ceramic substrates with good heat conduction have become available,
A structure in which a metal plate such as a copper plate is joined to a substrate, a circuit is formed, and then a semiconductor element is mounted as it is or after being subjected to a treatment such as plating is being adopted.
【0003】このようなモジュールは、当初、簡単な工
作機械に使用されてきたが、ここ数年、溶接機、電車の
駆動部、電気自動車に使用されるようになり、より厳し
い環境条件たとえば電流密度を上げるための回路銅厚の
増加や熱衝撃等に対する耐久性の向上と、更なる小型化
が要求されるようになってきた。この要求に対応可能な
セラミックス基板は、現時点では窒化アルミニウム基板
のみである。Such a module was originally used for a simple machine tool, but has been used for a welding machine, a drive part of an electric train, and an electric vehicle in the past few years. There has been a demand for an increase in circuit copper thickness in order to increase the density, improvement in durability against thermal shock, and further miniaturization. At present, the only ceramic substrate that can meet this requirement is an aluminum nitride substrate.
【0004】金属とセラミックスを接合する方法には種
々あるが、銅板と窒化アルミニウム基板との接合には、
両者間に活性金属を含むろう材を介在させ、加熱処理し
て接合体とする活性金属ろう付け法(例えば特開昭60-1
77634 号公報)や、表面が酸化処理された窒化アルミニ
ウム基板と銅板を銅の融点以下でCu−Oの共晶温度以
上で加熱接合するDBC法(例えば特開昭56-163093 号
公報)等がある。There are various methods for joining a metal and a ceramic, but for joining a copper plate and an aluminum nitride substrate,
An active metal brazing method in which a brazing material containing an active metal is interposed between the two and heat-treated to form a joined body (see, for example, JP-A-60-1
77634) or a DBC method (for example, Japanese Patent Laid-Open No. 56-163093) in which an aluminum nitride substrate whose surface is oxidized and a copper plate are heated and bonded at a temperature lower than the melting point of copper and higher than the eutectic temperature of Cu-O. is there.
【0005】活性金属ろう付け法は、DBC法に比べて
以下の利点がある。
(1)接合体を得るための処理温度が低いので、窒化ア
ルミニウム基板と銅板の熱膨張差によって生じる残留応
力が小さい。
(2)ろう材が延性金属であるので、ヒートショックや
ヒートサイクルに対する耐久性が大である。The active metal brazing method has the following advantages over the DBC method. (1) Since the processing temperature for obtaining the bonded body is low, the residual stress caused by the difference in thermal expansion between the aluminum nitride substrate and the copper plate is small. (2) Since the brazing material is a ductile metal, it is highly durable against heat shock and heat cycles.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、活性金
属ろう付け法は、ろう材の融点近傍にまで温度を上げて
接合するので接合体に応力が残留し、近年のヒートショ
ックやヒートサイクルに対する耐久性の要求を満たし得
ず、更なる改良が待たれていた。However, in the active metal brazing method, since the temperature is raised to near the melting point of the brazing material and the joining is performed, stress remains in the joined body, and durability against recent heat shock and heat cycles is present. It was not possible to meet the requirements of the above, and further improvement was awaited.
【0007】本発明の目的は、上記に鑑み、ヒートショ
ックやヒートサイクルに対する耐久性を更に改善した金
属回路を有するセラミックス回路基板の製造方法を提供
することにある。In view of the above, an object of the present invention is to provide a method for manufacturing a ceramics circuit board having a metal circuit with further improved durability against heat shock and heat cycle.
【0008】[0008]
【課題を解決するための手段】すなわち、本発明は以下
を要旨とするものである。
(請求項1)セラミックス基板と金属板との接合体、該
接合体の金属をエッチングして金属回路を形成させた接
合体、及び/又はセラミックス基板と金属回路パターン
との接合体を−20℃以下の雰囲気に接触させる、うね
り矯正工程を含むことを特徴とする金属回路を有するセ
ラミックス回路基板の製造方法。
(請求項2)セラミックス基板が厚み0.3〜0.8m
mの窒化アルミニウム基板、窒化珪素基板又はアルミナ
基板であり、金属が厚み0.3mm以上の銅であること
を特徴とする請求項1記載の金属回路を有するセラミッ
クス回路基板の製造方法。
(請求項3)セラミックス基板が窒化アルミニウム基板
であり、それを大気中で酸化処理を行い表面にアルミナ
を含む酸化表面が形成させてなるものであることを特徴
とする請求項2記載の金属回路を有するセラミックス回
路基板の製造方法。
(請求項4)接合体が活性金属ろう付け法によって接合
されたものであることを特徴とする請求項2記載の金属
回路を有するセラミックス回路基板の製造方法。
(請求項5)接合体が活性金属ろう付け法によって接合
されたものであることを特徴とする請求項3記載の金属
回路を有するセラミックス回路基板の製造方法。
(請求項6)接合体を真空パックし、それを温度−20
〜−80℃のメタノール・ドライアイスと接触させるこ
とを特徴とする請求項1、2、3、4又は5記載の金属
回路を有するセラミックス回路基板の製造方法。That is, the present invention is summarized as follows. (Claim 1) A bonded body of a ceramic substrate and a metal plate, a bonded body in which a metal of the bonded body is etched to form a metal circuit, and / or a bonded body of a ceramic substrate and a metal circuit pattern are -20 ° C. A method for manufacturing a ceramics circuit board having a metal circuit, comprising the step of contacting the following atmosphere with a waviness correction step. (Claim 2) The ceramic substrate has a thickness of 0.3 to 0.8 m.
2. The method for manufacturing a ceramics circuit board having a metal circuit according to claim 1, wherein the ceramic circuit board has a thickness of 0.3 mm or more, and is an aluminum nitride substrate, a silicon nitride substrate, or an alumina substrate having a thickness of 0.3 mm. (Claim 3) The metal circuit according to claim 2, wherein the ceramics substrate is an aluminum nitride substrate, which is oxidized in the atmosphere to form an oxidized surface containing alumina on the surface. A method for manufacturing a ceramics circuit board having the following. (Claim 4) The method for producing a ceramics circuit board having a metal circuit according to claim 2, wherein the joined body is joined by an active metal brazing method. (Claim 5) The method for producing a ceramics circuit board having a metal circuit according to claim 3, wherein the bonded body is bonded by an active metal brazing method. (Claim 6) The joined body is vacuum-packed and the temperature is set to -20.
The method for producing a ceramics circuit board having a metal circuit according to claim 1, 2, 3, 4, or 5, wherein the method is brought into contact with methanol / dry ice at -80 ° C.
【0009】[0009]
【発明の実施の形態】以下、さらに詳しく本発明につい
て説明する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below.
【0010】本発明は、セラミックスと金属板、金属回
路との接合体においては、熱膨張差で生じる残留応力が
温度に対してヒステリシスを持つ原理を利用したもので
ある。すなわち、図1は、横軸に温度、縦軸に金属回路
面のセラミックス基板にかかる応力を示したものである
が、この図で示されるように、金属板とセラミックスの
接合が終了した時点における残留応力がaであったとす
ると、それを−20℃以下に冷凍すると銅板は塑性変形
してbの位置へ応力が移動し、次いでそれを室温に戻す
とcの位置へ移動し、残留応力aが残留応力cまでに減
少することになる。その結果、回路基板の強度とヒート
ショックやヒートサイクルに対する耐久性が向上するこ
とになる。The present invention utilizes the principle that the residual stress caused by the difference in thermal expansion has a hysteresis with respect to temperature in a bonded body of ceramics, a metal plate and a metal circuit. That is, FIG. 1 shows the temperature on the horizontal axis and the stress applied to the ceramic substrate on the metal circuit surface on the vertical axis. As shown in FIG. 1, the stress at the time when the joining of the metal plate and the ceramic is completed. Assuming that the residual stress is a, if it is frozen to -20 ° C or lower, the copper plate is plastically deformed and the stress moves to the position of b, and when it is returned to room temperature, it moves to the position of c and the residual stress a. Will decrease to the residual stress c. As a result, the strength of the circuit board and the durability against heat shock and heat cycle are improved.
【0011】本発明は、セラミックス基板に金属板を接
合し、その接合体の金属をエッチングして金属回路を形
成させるか、又はあらかじめ金属板から金属回路パター
ンを加工しそれをセラミックス基板に接合して金属回路
を形成させ、金属回路を有するセラミックス回路基板を
製造するものであるが、本発明のうねり矯正工程は、金
属板とセラミックス基板とが接合された段階、該接合体
の金属をエッチングして金属回路を形成させた段階、及
び/又はセラミックス基板と金属回路パターンとが接合
された段階で行われる。望ましくは、最終製品に近い段
階で行うことである。According to the present invention, a metal plate is bonded to a ceramic substrate and the metal of the bonded body is etched to form a metal circuit, or a metal circuit pattern is previously processed from the metal plate and bonded to the ceramic substrate. A ceramic circuit board having a metal circuit is manufactured by forming a metal circuit with a metal circuit, and the undulation correction process of the present invention involves etching the metal of the bonded body at the stage when the metal plate and the ceramic substrate are bonded. This is performed at the stage where the metal circuit is formed by forming the metal circuit pattern and / or at the stage where the ceramic substrate and the metal circuit pattern are joined. Desirably, it is performed at a stage close to the final product.
【0012】うねり矯正工程における処理温度は、−2
0℃以下好ましくは−40〜−80℃であることを要
し、−20℃よりも高温では残留応力の低減効果は小さ
い。処理温度が−80℃よりも低すぎると冷却時の熱応
力が大きすぎて接合体に損傷を与える恐れがある。The processing temperature in the undulation correcting process is -2.
It is necessary to be 0 ° C. or lower, preferably −40 to −80 ° C., and the effect of reducing residual stress is small at a temperature higher than −20 ° C. If the treatment temperature is lower than −80 ° C., the thermal stress at the time of cooling is too large and the bonded body may be damaged.
【0013】−20℃以下に処理する方法としては、フ
ッ素系等の冷媒や、液体窒素、液体水素等の液化ガスを
用いた冷凍装置、あるいはメタノール・ドライアイス浴
に投入する方法が採用される。As a method of treating at -20 ° C. or lower, a method of introducing into a refrigerating apparatus using a refrigerant such as fluorine, a liquefied gas such as liquid nitrogen or liquid hydrogen, or a methanol / dry ice bath is adopted. .
【0014】本発明で使用されるセラミックス基板とし
ては、アルミナ、窒化珪素、窒化アルミニウム等があげ
られ、その厚みとしては、厚すぎると熱抵抗が大きくな
り、薄すぎると耐久性がなくなるので、0.3〜0.8
mm程度であることが好ましい。Examples of the ceramic substrate used in the present invention include alumina, silicon nitride, aluminum nitride and the like. If the thickness is too thick, the thermal resistance becomes large, and if it is too thin, the durability is lost. .3 to 0.8
It is preferably about mm.
【0015】セラミックス基板の表面性状は重要であ
り、微少な欠陥や窪み等は金属板との接触面積に大きな
影響を与えるため平滑であることが望ましく、それには
ホーニングや機械加工等の処理が施されているものが望
ましい。本発明においては、熱伝導率の高い窒化アルミ
ニウム基板が望ましく、特に、大気中、温度1100℃
程度で酸化処理を行い表面にアルミナを含む酸化表面を
形成させた窒化アルミニウム基板が望ましい。The surface texture of the ceramic substrate is important, and minute defects and dents have a great influence on the contact area with the metal plate, so that it is desirable that the surface is smooth, and it is subjected to treatments such as honing and machining. It is desirable that it is. In the present invention, an aluminum nitride substrate having a high thermal conductivity is desirable, and particularly in the atmosphere, the temperature is 1100 ° C.
An aluminum nitride substrate on which an oxidized surface containing alumina is formed by performing an oxidation treatment to some extent is desirable.
【0016】金属回路の材質としては、銅、アルミニウ
ム、タングステン、モリブデン等が使用されるが、銅が
一般的である。金属回路の厚みとしては、近年、電流密
度が増加していく傾向から0.3mmよりも厚い方が好
ましい。本発明においては、セラミックス基板の表面に
金属回路が、またその裏面には金属放熱板が形成された
構造の回路基板であってもよい。その金属放熱板の材質
についても上記したものが使用され、またその厚みは
0.2mm以下であることが好ましい。Copper, aluminum, tungsten, molybdenum and the like are used as the material of the metal circuit, but copper is generally used. The thickness of the metal circuit is preferably thicker than 0.3 mm because the current density tends to increase in recent years. In the present invention, the circuit board may have a structure in which a metal circuit is formed on the front surface of the ceramic substrate and a metal radiator plate is formed on the back surface thereof. As the material of the metal heat dissipation plate, the above-mentioned materials are used, and the thickness thereof is preferably 0.2 mm or less.
【0017】セラミックス基板の一方の面に金属回路、
他方の面に金属放熱板を形成する方法としては、セラミ
ック基板と金属板との接合体をエッチングする方法、金
属板から打ち抜かれた金属回路及び/又は金属放熱板の
パターンをセラミックス基板に接合する方法等によって
行うことができ、これらの際における金属板又は金属回
路パターンとセラミックス基板との接合方法としては、
活性金属ろう付け法やDBC法、Mo−Mn法、硫化銅
法、銅メタライズ法等が採用される。On one surface of the ceramic substrate, a metal circuit,
As a method of forming a metal heat sink on the other surface, a method of etching a bonded body of a ceramic substrate and a metal plate, a metal circuit punched from the metal plate and / or a pattern of the metal heat sink is bonded to the ceramic substrate. Can be performed by a method or the like, and as a method for joining the metal plate or the metal circuit pattern and the ceramics substrate in these cases,
An active metal brazing method, a DBC method, a Mo-Mn method, a copper sulfide method, a copper metallizing method or the like is adopted.
【0018】活性金属ろう付け法におけるろう材の金属
成分は、銀及び/又は銅を主成分とし、溶融時のセラミ
ックス基板との濡れ性を確保するために活性金属を副成
分とする。この活性金属成分は、セラミックス基板と反
応して酸化物や窒化物を生成させ、それらの生成物がろ
う材とセラミックス基板との結合を強固なものにする。
活性金属の具体例をあげれば、チタン、ジルコニウム、
ハフニウム、ニオブ、タンタル、バナジウムやこれらの
化合物である。これらの比率の一例は、銀69〜95重
量部と銅5〜31重量部の合計量100重量部あたり活
性金属1〜7重量部である。接合温度は、820〜86
0℃が好ましい。The metal component of the brazing filler metal in the active metal brazing method contains silver and / or copper as a main component, and the active metal as a sub component for ensuring wettability with the ceramic substrate during melting. This active metal component reacts with the ceramic substrate to generate oxides and nitrides, and these products strengthen the bond between the brazing material and the ceramic substrate.
Specific examples of the active metal include titanium, zirconium,
Hafnium, niobium, tantalum, vanadium and their compounds. An example of these ratios is 1 to 7 parts by weight of active metal per 100 parts by weight of the total amount of 69 to 95 parts by weight of silver and 5 to 31 parts by weight of copper. Bonding temperature is 820-86
0 ° C is preferred.
【0019】[0019]
【実施例】以下、本発明を実施例と比較例をあげて具体
的に説明する。EXAMPLES The present invention will be specifically described below with reference to Examples and Comparative Examples.
【0020】実施例1
窒化アルミニウム粉末96重量部、イットリア粉末4重
量部、オレイン酸2重量部を振動ミルにて予備混合した
後、エチルセルロース8重量部、グリセリントリオレー
ト3重量部及び水12重量部を配合しミキサーで混合し
た。この混合物を成型速度1.0m/分、成型圧力55
〜70kg/cm2 で押出成型を行い、遠赤外線にて1
20℃、5分間乾燥した後、480℃で10時間空気中
にて脱脂し、次いで温度1950℃×30分の条件で焼
成を行った。得られた焼結体の表面をホーニング処理し
て窒化アルミニウム基板とした。Example 1 96 parts by weight of aluminum nitride powder, 4 parts by weight of yttria powder and 2 parts by weight of oleic acid were premixed in a vibration mill, and then 8 parts by weight of ethyl cellulose, 3 parts by weight of glycerin trioleate and 12 parts by weight of water. Were mixed and mixed with a mixer. This mixture is molded at a molding speed of 1.0 m / min and a molding pressure of 55.
Extrusion molding at ~ 70kg / cm 2 and 1 in far infrared
After drying at 20 ° C. for 5 minutes, degreasing was performed in air at 480 ° C. for 10 hours, and then firing was performed at a temperature of 1950 ° C. for 30 minutes. The surface of the obtained sintered body was subjected to honing treatment to obtain an aluminum nitride substrate.
【0021】銀粉末90重量部、銅粉末10重量部、ジ
ルコニウム粉末3重量部、チタン粉末3重量部、テルピ
ネオール15重量部及びポリイソブチルメタアクリレー
トのトルエン溶液を固形分で5重量部加えてよく混練
し、ろう材ペーストを調整した。このろう材ペーストを
上記で製造された窒化アルミニウム基板(60mm×3
6mm×0.65mm)の回路面(表面)にスクリーン
印刷によってパターン率=0.20のL字型パターンに
塗布し、放熱面側(裏面)には全面塗布した。その際の
塗布量(乾燥後)は9mg/cm2とした。90 parts by weight of silver powder, 10 parts by weight of copper powder, 3 parts by weight of zirconium powder, 3 parts by weight of titanium powder, 15 parts by weight of terpineol and 5 parts by weight of a toluene solution of polyisobutylmethacrylate are added in a solid content and kneaded well. Then, the brazing paste was adjusted. This brazing filler metal paste was applied to the aluminum nitride substrate (60 mm × 3
A 6 mm × 0.65 mm) circuit surface (front surface) was applied by screen printing to form an L-shaped pattern with a pattern ratio of 0.20, and the entire surface of the heat dissipation surface (back surface) was applied. The coating amount (after drying) at that time was 9 mg / cm 2 .
【0022】次に、表面には60mm×36mm×0.
3mmの厚みをもつ銅板を、また裏面には60mm×3
6mm×0.15mmの厚みを持つ銅板を接触配置して
から、真空度1×10-5Torr以下の真空下、温度8
40℃で30分加熱した後、2℃/分の降温速度で冷却
して窒化アルミニウム基板と銅板の接合体を製造した。Next, on the surface, 60 mm × 36 mm × 0.
A copper plate with a thickness of 3 mm and a back surface of 60 mm x 3
After placing a copper plate having a thickness of 6 mm × 0.15 mm in contact with the copper plate, the temperature is set to 8 at a vacuum degree of 1 × 10 -5 Torr or less.
After heating at 40 ° C. for 30 minutes, it was cooled at a temperature decreasing rate of 2 ° C./minute to manufacture a joined body of an aluminum nitride substrate and a copper plate.
【0023】次いで、この接合体の銅板上にUV硬化タ
イプのエッチングレジストをスクリーン印刷で塗布後、
塩化第2銅溶液を用いてエッチング処理を行って銅板不
要部分を溶解除去し、さらにエッチングレジストを5%
苛性ソーダ溶液で剥離した。このエッチング処理後の接
合体には、銅回路パターン間に残留不要ろう材や活性金
属成分と窒化アルミニウム基板との反応物があるので、
それを温度60℃、10%フッ化アンモニウム溶液に1
0分間浸漬して除去した。Next, a UV curing type etching resist is applied by screen printing on the copper plate of this joined body,
An etching process is performed using a cupric chloride solution to dissolve and remove unnecessary portions of the copper plate, and further remove the etching resist by 5%.
It was peeled off with a caustic soda solution. In the bonded body after this etching treatment, since there is a residual unnecessary brazing material between the copper circuit patterns and a reaction product of the active metal component and the aluminum nitride substrate,
1 at a temperature of 60 ℃, 10% ammonium fluoride solution
It was removed by immersing it for 0 minutes.
【0024】次いでこれを真空パックし、−70℃のメ
タノール・ドライアイスに1時間浸漬してうねり矯正を
行った。Then, this was vacuum-packed and immersed in methanol / dry ice at -70 ° C. for 1 hour to correct the undulation.
【0025】このようにして製造された金属回路を有す
るセラミックス基板について、放熱側(裏面)から押し
た場合の3点曲げ強度を、スパン30mm、クロスヘッ
ドスピード0.5mm/分の条件にて測定した。また、
気中、−40℃×30分保持後、25℃×10分間放
置、更に125℃×30分保持後、25℃×10分間放
置を1サイクルとした耐ヒートサイクル試験を行い、放
熱銅板又は銅回路が剥離開始したヒートサイクル回数を
測定した。その結果を表1に示す。With respect to the ceramic substrate having a metal circuit manufactured in this manner, the three-point bending strength when pressed from the heat radiation side (back surface) was measured under the conditions of a span of 30 mm and a crosshead speed of 0.5 mm / min. did. Also,
In the air, after holding -40 ° C x 30 minutes, leaving it at 25 ° C x 10 minutes, holding it at 125 ° C x 30 minutes, and letting it stand at 25 ° C x 10 minutes as a cycle, a heat cycle resistance test was conducted. The number of heat cycles when the circuit started peeling was measured. The results are shown in Table 1.
【0026】比較例1
うねり矯正を行わなかったこと以外は、実施例1と同様
にして金属回路を有するセラミックス基板を製造し、評
価した。Comparative Example 1 A ceramic substrate having a metal circuit was manufactured and evaluated in the same manner as in Example 1 except that the waviness was not corrected.
【0027】[0027]
【表1】 [Table 1]
【0028】[0028]
【発明の効果】本発明によれば、ヒートサイクルに対す
る耐久性を一段と向上させた金属回路を有するセラミッ
クス回路基板を製造することができる。According to the present invention, it is possible to manufacture a ceramics circuit board having a metal circuit with further improved durability against heat cycles.
【図1】ヒステリシスの原理を説明するための図であ
る。FIG. 1 is a diagram for explaining the principle of hysteresis.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−170374(JP,A) 特開 昭63−254031(JP,A) 特開 昭61−225047(JP,A) 特開 平6−164081(JP,A) 特開 平3−250688(JP,A) (58)調査した分野(Int.Cl.7,DB名) H05K 3/10 - 3/38 C04B 37/00 - 37/04 ─────────────────────────────────────────────────── --- Continuation of the front page (56) Reference JP-A-4-170374 (JP, A) JP-A-63-254031 (JP, A) JP-A-61-225047 (JP, A) JP-A-6- 164081 (JP, A) JP-A-3-250688 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H05K 3/10-3/38 C04B 37/00-37/04
Claims (6)
該接合体の金属をエッチングして金属回路を形成させた
接合体、及び/又はセラミックス基板と金属回路パター
ンとの接合体を−20℃以下の雰囲気に接触させる、う
ねり矯正工程を含むことを特徴とする金属回路を有する
セラミックス回路基板の製造方法。1. A bonded body of a ceramic substrate and a metal plate,
A undulation correcting step of contacting the bonded body in which the metal of the bonded body is etched to form a metal circuit and / or the bonded body of the ceramic substrate and the metal circuit pattern to an atmosphere of −20 ° C. or lower. And a method for manufacturing a ceramics circuit board having a metal circuit.
mmの窒化アルミニウム基板、窒化珪素基板又はアルミ
ナ基板であり、金属が厚み0.3mm以上の銅であるこ
とを特徴とする請求項1記載の金属回路を有するセラミ
ックス回路基板の製造方法。2. The ceramic substrate has a thickness of 0.3 to 0.8.
2. The method for producing a ceramic circuit board having a metal circuit according to claim 1, wherein the method is an aluminum nitride substrate, a silicon nitride substrate, or an alumina substrate having a thickness of 0.3 mm, and the metal is copper having a thickness of 0.3 mm or more.
板であり、それを大気中で酸化処理を行い表面にアルミ
ナを含む酸化表面が形成させてなるものであることを特
徴とする請求項2記載の金属回路を有するセラミックス
回路基板の製造方法。3. The metal circuit according to claim 2, wherein the ceramics substrate is an aluminum nitride substrate, which is oxidized in the atmosphere to form an oxidized surface containing alumina on the surface. A method for manufacturing a ceramics circuit board having the following.
合されたものであることを特徴とする請求項2記載の金
属回路を有するセラミックス回路基板の製造方法。4. The method for manufacturing a ceramics circuit board having a metal circuit according to claim 2, wherein the joined body is joined by an active metal brazing method.
合されたものであることを特徴とする請求項3記載の金
属回路を有するセラミックス回路基板の製造方法。5. The method for manufacturing a ceramics circuit board having a metal circuit according to claim 3, wherein the joined body is joined by an active metal brazing method.
0〜−80℃のメタノール・ドライアイスと接触させる
ことを特徴とする請求項1、2、3、4又は5記載の金
属回路を有するセラミックス回路基板の製造方法。6. The joined body is vacuum-packed and the temperature is set to −2.
The method for producing a ceramics circuit board having a metal circuit according to claim 1, wherein the method is brought into contact with methanol / dry ice at 0 to -80 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04514596A JP3419620B2 (en) | 1996-03-01 | 1996-03-01 | Method for manufacturing ceramic circuit board having metal circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04514596A JP3419620B2 (en) | 1996-03-01 | 1996-03-01 | Method for manufacturing ceramic circuit board having metal circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09246691A JPH09246691A (en) | 1997-09-19 |
JP3419620B2 true JP3419620B2 (en) | 2003-06-23 |
Family
ID=12711121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04514596A Expired - Fee Related JP3419620B2 (en) | 1996-03-01 | 1996-03-01 | Method for manufacturing ceramic circuit board having metal circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3419620B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014003133A (en) * | 2012-06-18 | 2014-01-09 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module |
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---|---|---|---|---|
JP5678684B2 (en) * | 2011-01-24 | 2015-03-04 | 三菱マテリアル株式会社 | Power module substrate manufacturing method |
JP5786569B2 (en) * | 2011-09-05 | 2015-09-30 | 三菱マテリアル株式会社 | Power module substrate manufacturing method |
JP5966512B2 (en) * | 2012-03-29 | 2016-08-10 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
JP5987418B2 (en) * | 2012-03-30 | 2016-09-07 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
JP5853923B2 (en) * | 2012-09-28 | 2016-02-09 | 三菱マテリアル株式会社 | Power module substrate manufacturing method |
-
1996
- 1996-03-01 JP JP04514596A patent/JP3419620B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014003133A (en) * | 2012-06-18 | 2014-01-09 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module |
Also Published As
Publication number | Publication date |
---|---|
JPH09246691A (en) | 1997-09-19 |
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