JPH0460025B2 - - Google Patents
Info
- Publication number
- JPH0460025B2 JPH0460025B2 JP58251886A JP25188683A JPH0460025B2 JP H0460025 B2 JPH0460025 B2 JP H0460025B2 JP 58251886 A JP58251886 A JP 58251886A JP 25188683 A JP25188683 A JP 25188683A JP H0460025 B2 JPH0460025 B2 JP H0460025B2
- Authority
- JP
- Japan
- Prior art keywords
- glaze layer
- layer
- heating resistor
- thermal head
- glaze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33505—Constructional details
- B41J2/33535—Substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3355—Structure of thermal heads characterised by materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33555—Structure of thermal heads characterised by type
- B41J2/3357—Surface type resistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3359—Manufacturing processes
Description
本発明は、熱伝導性基材と発熱抵抗体との間に
多気泡ガラスよりなるグレーズ層を介してなるサ
ーマルヘツドに関する。
この種サーマルヘツドの一例を第１図に示す。
参照符号１はアルミナセラミツクスなどよりなる
熱伝導性基材、２は多気泡ガラスよりなるグレー
ズ層、４はタンタルナイトライドやチタンシリサ
イドなどよりなる発熱抵抗体、５は金、アルミニ
ウムなどよりなる電極、６はシリコンオキサイド
やタンタルオキサイドなどよりなる保護層であ
る。ここで、グレーズ層２を有する基材１表面の
全面に別途薄層状グレーズ層を形成したり、グレ
ーズ層２を図示の如き、所謂、部分グレーズとす
るのではなく、基材１表面を全て覆う全面グレー
ズとして形成したり、電極５や保護層６を被物質
あるいは複層に形成したりなどすることもある。
さて、グレーズ層２を多気泡ガラスとするの
は、無気泡であるり熱応答性が良好になるからで
ある。即ち、無気泡体に比べると多気泡体は見掛
けの熱伝導率が小さく、熱し易く冷め易いので、
電極５への通電、切電による発熱抵抗体４の昇
温、降温が速やかになる。従つて、感熱リボンを
通じての転写や感熱紙への印字性能が良好化され
ることになる。
しかし、グレーズ層２を多気泡ガラスとした場
合、上記長所を有する反面、一つの問題がある。
例えば数10μmといつた適宜長さとされるグレ
ーズ層２はガラスペーストを600℃、700℃といつ
た相当の高温で焼成して得られるが、発熱抵抗体
４の抵抗値の経時変化を大きくしないためには、
発熱抵抗体４の形成に際して、その結晶形成温度
以上にする必要があり、従つて、発熱抵抗体４の
形成にもかなりの高温過程が要されることにな
る。つまり、形成されたグレーズ層２が高温下に
おかれる訳で、その結果、グレーズ層２の表面に
凹凸ができるなど不要な形状変化を生じてしまう
ことがある。パターニングの歩止りの低下、発熱
抵抗体４に設定される抵抗値のバラツキ増大化、
保護層６のクラツク発生、あるいは転写時の不要
な線引き現象の発生など、上記グレーズ層２の不
要な形状変化がもたらす悪影響は極めて大きい。
従つて、サーマルヘツドの長寿命化を目的とし
て、結晶形成温度が500℃あるいはそれ以上と比
較的高い、チタン、タンタル、タングステンなど
の高融点金属のシリサイドを発熱抵抗体４の材質
として選択する場合には上記問題の解決は殊に重
要となつてくる。
本発明は上述したところに鑑みなされたもので
あり、熱伝導性基材と発熱抵抗体との間に多気泡
ガラスよりなるグレーズ層を介してなるサーマル
ヘツドにおいて、前記多気泡ガラスよりなるグレ
ーズ層と前記発熱抵抗体との間に層厚１〜10μm
の絶縁性物質層を介在させたことを特徴とするサ
ーマルヘツドを要旨とする。
以下、添付第２図に示す実施例に基づいて説明
すると、第２図における第１図との相違は、グレ
ーズ層２と発熱抵抗体４との間に介在される絶縁
性物質層３の存在にある。この絶縁性物質層３
は、少くとも発熱抵抗体４のグレーズ層２上に位
置する部分に対して形成されるものであるが、ス
パツタリングなどによつてグレーズ層２の全表面
を覆うよう形成するのが簡単でよい。また、材質
的には絶縁性を有するならば格別限定されること
なく、例えば、シリコンオキサイド、アルミナ、
シリコンナイトライド、タンタルオキサイド、シ
リコンカーバイド、高抵抗シリコンなどを挙げる
ことができるが、耐熱衝撃性が高く熱伝導率の小
さいものがよく、SiO2などのシリコンオキサイ
ドはその代表的なものである。
そして、層厚は１〜10μmである。1μm未満の
場合は絶縁性物質層３の存在効果が実質的に現わ
れず、また、10μmをこえた場合はグレーズ層２
を多気泡体とした価値、即ち、熱応答性の良さが
失われてしまう。更に好ましくは２〜4μm程度と
するのが良い。
尚、上記点に付随して、グレーズ層２が有する
気泡のグレーズ層２全体に占める体積割合は約20
〜30％程度とするのがよい。本来、グレーズ層２
が有する気泡は微小、かつ、体積割合が大なもの
ほど熱応答性にとつては都合が良く、また、本発
明は体積割合に格別の依存性を有さないものでも
あるが、あまりに気泡の占める割合が大きくなる
と、グレーズ層２の強度が低下することになる
し、上記程度の割合で十分に多気泡体としての効
果を発揮するからである。
以上述べたように、本発明のサーマルヘツドは
多気泡ガラスよりなるグレーズ層２と発熱抵抗体
４との間に層厚１〜10μmの絶縁性物質層を介在
させることにより、歩止りの向上、発熱抵抗体４
の抵抗値のバラツキ減小化などに効果を発揮する
ばかりでなく、グレーズ層２が多気泡体であるこ
とによつて奏せられる熱応答性の良好さを十分に
発揮させることができ、真に高品質、長寿命のサ
ーマルヘツド足ることができるものである。以
下、一例として、アルミナセラミツクス製基材１
にガラスペーストをスクリーン印刷し700℃で焼
成して約0.1〜5μmの気泡が約20％ランダムに存
在する厚さ約60μmのグレーズ層２を形成し、シ
リコンオキサイドよりなる絶縁性物質層３をその
上から最高温度400℃のスパツタリング法により
層厚を変えて形成し、これらの上にチタンシリサ
イドよりなる発熱抵抗体４を最高温度550℃のス
パツタリング法によつて形成し、更にその上から
アルミ合金よりなる電極５と窒素を添加したシリ
コンよりなる厚さ約5μmの保護層６を順次形成し
て得たものについて２×10-3秒の周期で５×10-4
秒の0.65Wの電力印加による転写テスト結果を表
−１に示す。
The present invention relates to a thermal head in which a glaze layer made of multicellular glass is interposed between a thermally conductive base material and a heating resistor. An example of this type of thermal head is shown in FIG.
Reference numeral 1 is a thermally conductive base material made of alumina ceramics or the like, 2 is a glaze layer made of multicellular glass, 4 is a heating resistor made of tantalum nitride, titanium silicide, etc., 5 is an electrode made of gold, aluminum, etc. 6 is a protective layer made of silicon oxide, tantalum oxide, or the like. Here, instead of forming a separate thin glaze layer on the entire surface of the base material 1 having the glaze layer 2 or making the glaze layer 2 a so-called partial glaze as shown in the figure, the entire surface of the base material 1 is covered. It may be formed as a glaze over the entire surface, or the electrode 5 and the protective layer 6 may be formed as a covering material or as a multilayer. Now, the reason why the glaze layer 2 is made of multi-celled glass is that it is bubble-free and has good thermal response. In other words, compared to non-cellular materials, multi-cellular materials have a lower apparent thermal conductivity and are easier to heat up and cool down.
The temperature of the heating resistor 4 increases and decreases quickly due to energization and disconnection of the electrode 5. Therefore, the transfer performance through the thermal ribbon and the printing performance on thermal paper are improved. However, when the glaze layer 2 is made of multicellular glass, although it has the above advantages, there is one problem. For example, the glaze layer 2, which has an appropriate length of several tens of micrometers, is obtained by firing glass paste at a considerably high temperature such as 600°C or 700°C, but it does not cause a large change in the resistance value of the heating resistor 4 over time. In order to
When forming the heating resistor 4, it is necessary to maintain the temperature at or above the crystal formation temperature thereof, and therefore, the formation of the heating resistor 4 also requires a considerably high temperature process. That is, the formed glaze layer 2 is exposed to high temperatures, which may result in unnecessary changes in shape such as unevenness on the surface of the glaze layer 2. Decreased patterning yield, increased variation in resistance values set for the heating resistor 4,
Unnecessary changes in the shape of the glaze layer 2 have extremely large adverse effects, such as the occurrence of cracks in the protective layer 6 or the occurrence of unnecessary line-drawing phenomena during transfer.
Therefore, for the purpose of extending the life of the thermal head, when selecting silicide of a high-melting point metal such as titanium, tantalum, or tungsten, which has a relatively high crystal formation temperature of 500°C or higher, as the material for the heating resistor 4. Solving the above problems becomes especially important. The present invention has been made in view of the above, and provides a thermal head in which a glaze layer made of multi-cell glass is interposed between a thermally conductive base material and a heating resistor. and the heating resistor with a layer thickness of 1 to 10 μm.
The gist of the invention is a thermal head characterized by having an insulating material layer interposed therebetween. The following explanation will be given based on the embodiment shown in the attached FIG. 2. The difference between FIG. 2 and FIG. It is in. This insulating material layer 3
is formed on at least the portion of the heating resistor 4 located on the glaze layer 2, but it is easier to form it so as to cover the entire surface of the glaze layer 2 by sputtering or the like. In addition, the material is not particularly limited as long as it has insulating properties, such as silicon oxide, alumina,
Examples include silicon nitride, tantalum oxide, silicon carbide, and high-resistance silicon, but those with high thermal shock resistance and low thermal conductivity are preferred, and silicon oxide such as SiO 2 is a typical example. The layer thickness is 1 to 10 μm. When the thickness is less than 1 μm, the effect of the presence of the insulating material layer 3 does not appear substantially, and when it exceeds 10 μm, the glaze layer 2
The value of making it a multicellular material, that is, the good thermal responsiveness, is lost. More preferably, the thickness is about 2 to 4 μm. Incidentally, in conjunction with the above point, the volume ratio of the air bubbles in the glaze layer 2 to the entire glaze layer 2 is approximately 20
It is best to keep it at around 30%. Originally, glaze layer 2
The smaller the bubbles and the larger the volume ratio, the better the thermal response.Also, although the present invention does not have a particular dependence on the volume ratio, This is because when the proportion increases, the strength of the glaze layer 2 decreases, and the above-mentioned proportion sufficiently exhibits the effect as a multicellular material. As described above, the thermal head of the present invention improves yield by interposing an insulating material layer with a thickness of 1 to 10 μm between the glaze layer 2 made of multicellular glass and the heating resistor 4. Heat generating resistor 4
Not only is it effective in reducing variations in the resistance value of What you need is a high quality, long life thermal head. Below, as an example, alumina ceramics base material 1
A glass paste is screen printed on the glass paste and baked at 700℃ to form a glaze layer 2 with a thickness of about 60 μm in which about 20% of air bubbles of about 0.1 to 5 μm exist randomly. A heating resistor 4 made of titanium silicide is formed on top by a sputtering method at a maximum temperature of 400°C with varying thickness, and then a heating resistor 4 made of titanium silicide is formed by a sputtering method at a maximum temperature of 550°C. 5 × 10 -4 at a period of 2 × 10 -3 seconds, obtained by sequentially forming an electrode 5 made of silicon and a protective layer 6 of approximately 5 μm thick made of nitrogen-doped silicon.
Table 1 shows the results of the transfer test by applying a power of 0.65W for a second.
【表】【table】
第１図は本発明に係るサーマルヘツドの一例を
示す要部断面図、第２図は本発明の一実施例を示
す要部断面図である。
１…熱伝導性基材、２…グレーズ層、３…絶縁
性物質層、４…発熱抵抗体、５…電極、６…保護
層。
FIG. 1 is a sectional view of a main part showing an example of a thermal head according to the present invention, and FIG. 2 is a sectional view of a main part showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Heat conductive base material, 2... Glaze layer, 3... Insulating material layer, 4... Heat generating resistor, 5... Electrode, 6... Protective layer.
Claims (1)
ラスよりなるグレーズ層を介してなるサーマルヘ
ツドにおいて、前記多気泡ガラスよりなるグレー
ズ層と前記発熱抵抗体との間に層厚１〜10μmの
絶縁性物質層を介在させたことを特徴とするサー
マルヘツド。1 In a thermal head formed by interposing a glaze layer made of multi-celled glass between a thermally conductive base material and a heat generating resistor, a layer thickness of 1 to 1 is provided between the glaze layer made of multi-celled glass and the heat generating resistor. A thermal head characterized by having a 10μm insulating material layer interposed therebetween.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58251886A JPS60141569A (en) | 1983-12-28 | 1983-12-28 | Thermal head |
| US06/686,245 US4612433A (en) | 1983-12-28 | 1984-12-26 | Thermal head and manufacturing method thereof |
| DE19843447581 DE3447581A1 (en) | 1983-12-28 | 1984-12-28 | THERMAL PRINTER AND METHOD FOR THE PRODUCTION THEREOF |
| GB08432697A GB2151989B (en) | 1983-12-28 | 1984-12-28 | Thermal printing head |
| FR8420020A FR2557506B1 (en) | 1983-12-28 | 1984-12-28 | THERMAL HEAD AND MANUFACTURING METHOD THEREOF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58251886A JPS60141569A (en) | 1983-12-28 | 1983-12-28 | Thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60141569A JPS60141569A (en) | 1985-07-26 |
| JPH0460025B2 true JPH0460025B2 (en) | 1992-09-24 |
Family
ID=17229406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58251886A Granted JPS60141569A (en) | 1983-12-28 | 1983-12-28 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60141569A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3074625B2 (en) * | 1989-10-14 | 2000-08-07 | ローム株式会社 | Thermal print head and method of manufacturing the same |
| JP6154338B2 (en) * | 2014-02-25 | 2017-06-28 | 京セラ株式会社 | Thermal head and thermal printer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455449A (en) * | 1977-10-13 | 1979-05-02 | Canon Inc | Thermal head for thermal recorder |
| JPS5859864A (en) * | 1981-10-07 | 1983-04-09 | Seiko Epson Corp | Thermal head |
| JPS5874370A (en) * | 1981-10-29 | 1983-05-04 | Seiko Instr & Electronics Ltd | Thermal head |
-
1983
- 1983-12-28 JP JP58251886A patent/JPS60141569A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455449A (en) * | 1977-10-13 | 1979-05-02 | Canon Inc | Thermal head for thermal recorder |
| JPS5859864A (en) * | 1981-10-07 | 1983-04-09 | Seiko Epson Corp | Thermal head |
| JPS5874370A (en) * | 1981-10-29 | 1983-05-04 | Seiko Instr & Electronics Ltd | Thermal head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60141569A (en) | 1985-07-26 |
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