JPH0458689B2 - - Google Patents
Info
- Publication number
- JPH0458689B2 JPH0458689B2 JP18616882A JP18616882A JPH0458689B2 JP H0458689 B2 JPH0458689 B2 JP H0458689B2 JP 18616882 A JP18616882 A JP 18616882A JP 18616882 A JP18616882 A JP 18616882A JP H0458689 B2 JPH0458689 B2 JP H0458689B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- polarizability
- mol
- molar
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000010287 polarization Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18616882A JPS5975632A (ja) | 1982-10-25 | 1982-10-25 | 非晶質又は結晶質の低分極性薄膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18616882A JPS5975632A (ja) | 1982-10-25 | 1982-10-25 | 非晶質又は結晶質の低分極性薄膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5975632A JPS5975632A (ja) | 1984-04-28 |
| JPH0458689B2 true JPH0458689B2 (enrdf_load_stackoverflow) | 1992-09-18 |
Family
ID=16183577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18616882A Granted JPS5975632A (ja) | 1982-10-25 | 1982-10-25 | 非晶質又は結晶質の低分極性薄膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975632A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245137A (ja) * | 1984-05-21 | 1985-12-04 | Toshiba Corp | 半導体デバイス |
-
1982
- 1982-10-25 JP JP18616882A patent/JPS5975632A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5975632A (ja) | 1984-04-28 |
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