JPH0458225A - Transparent conductive film and production thereof - Google Patents
Transparent conductive film and production thereofInfo
- Publication number
- JPH0458225A JPH0458225A JP17050390A JP17050390A JPH0458225A JP H0458225 A JPH0458225 A JP H0458225A JP 17050390 A JP17050390 A JP 17050390A JP 17050390 A JP17050390 A JP 17050390A JP H0458225 A JPH0458225 A JP H0458225A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ito
- transparent conductive
- conductive film
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 13
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 abstract description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 9
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical group [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は透明導電膜およびその製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent conductive film and a method for manufacturing the same.
従来より液晶表示体、エレクトロルミネッセンス、太陽
電池などの電極材料として透明導電膜が利用されており
、この透明導電膜には金、銀、鋼、白金、パラジウム、
アルミニウムなどの金属薄膜と酸化第二スズ、酸化イン
ジウム、酸化亜鉛などの酸化物半導体がある。Transparent conductive films have traditionally been used as electrode materials for liquid crystal displays, electroluminescence, solar cells, etc., and these transparent conductive films include gold, silver, steel, platinum, palladium,
There are metal thin films such as aluminum and oxide semiconductors such as stannic oxide, indium oxide, and zinc oxide.
金属薄膜は低い基板温度で容易に低抵抗の膜を作製する
ことができるが、高い透過率を得るためには膜厚を非常
に薄くしなければならず機械的強度が劣るという欠点を
持っている。一方酸化物半導体は優わた透光性と膜強度
を有しており導電性も良いことから実用的であり広く応
用されている。Metal thin films can be easily fabricated with low resistance at low substrate temperatures, but in order to obtain high transmittance, the film must be extremely thin, which has the disadvantage of poor mechanical strength. There is. On the other hand, oxide semiconductors have excellent light transmittance, film strength, and good conductivity, so they are practical and widely applied.
中でもＩＴＯ膜は電気抵抗が低く透明電極などとして最
も広く使われている。 通常ＩＴＯ膜は、成膜された後
に、塩酸と水の混合液等のエツチング液によって目的に
あった形状にエツチング加工されて使用される。Among them, ITO films have low electrical resistance and are most widely used as transparent electrodes. Usually, after the ITO film is formed, it is etched into a desired shape using an etching solution such as a mixture of hydrochloric acid and water.
しかしながら、ガラス基板上にＩＴＯ膜をスパッタ法に
よって作製した場合、ミクロ的に酸化スズ成分が基板面
に付着し、前記のエツチング液で工Ｔｏ膜をエツチング
しても酸化スズは剥離されず基板上に残るため、きれい
なエツチング加工ができない場合がある。そうした場合
液晶表示体などの透明電極として使った時には電極間の
ショートを起こしてしまうという問題がある。そこで本
発明の目的は、このような剥離部の酸化スズ残りを発生
させない透明導電膜を提供することにある。However, when an ITO film is fabricated on a glass substrate by sputtering, the tin oxide component microscopically adheres to the substrate surface, and even if the ITO film is etched with the above-mentioned etching solution, the tin oxide is not peeled off and remains on the substrate. Because the etching remains on the surface, it may not be possible to perform a clean etching process. In such a case, when used as a transparent electrode for a liquid crystal display or the like, there is a problem in that a short circuit occurs between the electrodes. Therefore, an object of the present invention is to provide a transparent conductive film that does not generate such tin oxide residue at the peeled portion.
本発明の透明導電膜は、基板上に第１層として酸化イン
ジウム層が形成された後、第２層としてＩＴＯ層が形成
された積層構造を持つことを特徴としている。また、本
発明の透明導電膜の製造方法は、基板上に透明導電膜を
形成する際、第１層として酸化インジウム層を、第２層
としＩＴＯ層を順次設けることを特徴としている。The transparent conductive film of the present invention is characterized by having a laminated structure in which an indium oxide layer is formed as a first layer on a substrate, and then an ITO layer is formed as a second layer. Further, the method for producing a transparent conductive film of the present invention is characterized in that when forming a transparent conductive film on a substrate, an indium oxide layer is provided as a first layer, and an ITO layer is provided as a second layer.
真空チャンバー内を５Ｘ１０−’Ｔｏｒｒの圧力まで排
気した後、酸素の圧力が４Ｘ１０−’Ｔｏｒｒ、アルゴ
ンと酸素の圧力の和が５Ｘ１０−３Ｔ。After evacuating the inside of the vacuum chamber to a pressure of 5X10-'Torr, the pressure of oxygen was 4X10-'Torr, and the sum of the pressures of argon and oxygen was 5X10-3T.
ｒｒになるようにガスを導入し、３００°Ｃに加熱した
ガラス基板上にＤＣマグネトロンスパッタ法で第１層の
酸化インジウム層を２００オンダストローム、第２層の
ＩＴｏ層を１０００オングストローム順次形成し実施例
とした。また、比較例として実施例と同様な手順でＩＴ
Ｏ膜を１０００オングストローム作製した。A gas was introduced so that rr was introduced, and a first layer of indium oxide layer of 200 angstroms and a second layer of ITo layer of 1000 angstroms were sequentially formed by DC magnetron sputtering on a glass substrate heated to 300°C. As an example. In addition, as a comparative example, IT
An O film with a thickness of 1000 angstroms was fabricated.
これらの膜を塩酸と硝酸と水の混合液で、ＩＴＯ線の幅
が１００オングストローム、線と線の間隔が４０オング
ストロームのストライブ状にエツチング加工した。その
結果、比較例の方は線と線の間、すなわち膜が剥離され
ていなければならない部分に、酸化スズが点状に残って
おりガラス面が汚れていた。それと比較して本実施例は
線間に酸化スズが残る事なくきれいにエツチングされて
いる。These films were etched using a mixture of hydrochloric acid, nitric acid, and water to form stripes with ITO lines each having a width of 100 angstroms and an interval between lines of 40 angstroms. As a result, in the comparative example, dots of tin oxide remained between the lines, that is, in areas where the film should have been peeled off, and the glass surface was dirty. In comparison, in this example, the etching is done cleanly without any tin oxide remaining between the lines.
以上述べたように、本発明の透明導電膜は基板上に第１
層として酸化インジウム層が形成された後、第２層とし
てＩＴｏ層が形成された積層構造を持つので、ＩＴＯ膜
をエツチング加工する際酸化スズが剥離部に残るという
問題がなくなった。As described above, the transparent conductive film of the present invention is applied to the first layer on the substrate.
Since it has a laminated structure in which an indium oxide layer is formed as a layer and then an ITo layer is formed as a second layer, there is no problem that tin oxide remains in the peeled part when etching the ITO film.
したがって、本発明の透明導電膜を用いることによって
液晶表示体などの透明電極間のショートをなくすことが
でき、生産性・品質の向上といった効果を有する。なお
本発明の透明導電膜は真空蒸着法、ＲＦスパッタリング
法、イオンブレーティング法、イオンビームスパッタ法
、ＣＶＤ法など様々な手法により成膜可能でありその応
用分野も各種表示デバイス、太陽電池、撮像素子などの
透明電極や発熱膜、帯電防止膜、熱線反射膜、選択透過
膜など広い分野で応用可能である。また、本発明の透明
導電膜の製造方法は、基板上に透明導電膜を形成する際
、第１層として酸化インジウム層を、第２層としてＩＴ
Ｏ層を順次設けたのでエツチング加工性が優れた透明導
電膜を得ることができる。Therefore, by using the transparent conductive film of the present invention, it is possible to eliminate short circuits between transparent electrodes of a liquid crystal display, etc., and this has the effect of improving productivity and quality. The transparent conductive film of the present invention can be formed by various methods such as vacuum evaporation, RF sputtering, ion blating, ion beam sputtering, and CVD, and its application fields include various display devices, solar cells, and imaging. It can be applied in a wide range of fields, including transparent electrodes for devices, heat-generating films, antistatic films, heat ray reflective films, and selective transmission films. Further, in the method for manufacturing a transparent conductive film of the present invention, when forming a transparent conductive film on a substrate, an indium oxide layer is formed as a first layer and an IT layer is formed as a second layer.
Since the O layers are sequentially provided, a transparent conductive film with excellent etching processability can be obtained.
以 上 出願人 セイコーエプソン株式会社 代理人弁理士 鈴木喜三部（他１名）that's all Applicant: Seiko Epson Corporation Representative Patent Attorney Kizobe Suzuki (1 other person)
Claims (1)
れた後、第２層としてスズがドーピングされた酸化イン
ジウム（ＩＴＯ）層が形成された積層構造を持つことを
特徴とする透明導電膜。（２）基板上に透明導電膜を形
成する際、第１層として酸化インジウム層を、第２層と
してＩＴＯ層を順次設けたことを特徴とする透明導電膜
の製造方法。(1) A transparent conductive film characterized by having a laminated structure in which an indium oxide layer is formed as a first layer on a substrate, and then a tin-doped indium oxide (ITO) layer is formed as a second layer. . (2) A method for manufacturing a transparent conductive film, characterized in that, when forming the transparent conductive film on a substrate, an indium oxide layer is provided as a first layer and an ITO layer is provided as a second layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17050390A JPH0458225A (en) | 1990-06-28 | 1990-06-28 | Transparent conductive film and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17050390A JPH0458225A (en) | 1990-06-28 | 1990-06-28 | Transparent conductive film and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0458225A true JPH0458225A (en) | 1992-02-25 |
Family
ID=15906169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17050390A Pending JPH0458225A (en) | 1990-06-28 | 1990-06-28 | Transparent conductive film and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0458225A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100859148B1 (en) * | 2007-03-23 | 2008-09-19 | 희성금속 주식회사 | High flatness transparent conductive thin films and its manufacturing method |
-
1990
- 1990-06-28 JP JP17050390A patent/JPH0458225A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100859148B1 (en) * | 2007-03-23 | 2008-09-19 | 희성금속 주식회사 | High flatness transparent conductive thin films and its manufacturing method |
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