JPH0456447B2 - - Google Patents
Info
- Publication number
- JPH0456447B2 JPH0456447B2 JP57172022A JP17202282A JPH0456447B2 JP H0456447 B2 JPH0456447 B2 JP H0456447B2 JP 57172022 A JP57172022 A JP 57172022A JP 17202282 A JP17202282 A JP 17202282A JP H0456447 B2 JPH0456447 B2 JP H0456447B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- etching
- reaction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000010574 gas phase reaction Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
産業上の技術分野
本発明は、薄膜を形成しても基板表面の平坦性
を維持したい場合に適用して好ましい薄膜形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film forming method that is preferably applied when it is desired to maintain the flatness of a substrate surface even after forming a thin film.
従来技術と問題点
一般に、半導体装置を製造する際、薄膜の形成
は極めて重要な技術である。Prior Art and Problems Generally, when manufacturing semiconductor devices, forming thin films is an extremely important technique.
その薄膜としては、金属、絶縁膜、半導体膜等
があり、それ等は種々の技法、例えば、真空蒸着
法、スパツタ法、気相成長法等を利用して作製さ
れてきた。 Such thin films include metals, insulating films, semiconductor films, etc., and these have been produced using various techniques such as vacuum evaporation, sputtering, and vapor phase growth.
然し乍ら、半導体集積回路装置に於いて、素子
の高密化が進むにつれて装置表面の凹凸が激しく
なり、その上に所望の精密なパターンを形成する
ことが困難になつたり、薄膜の不連続を生じたり
している。 However, in semiconductor integrated circuit devices, as the density of elements increases, the surface of the device becomes more uneven, making it difficult to form a desired precise pattern thereon, and causing discontinuities in the thin film. are doing.
これを解決する為、基板表面にシリコンを含む
液体をスピン・コート法にて一様に塗布して平坦
にする技術も開発されたが、前記液体のような無
機材料を使用した場合には、清浄な薄膜を形成す
ることは困難である。また、気相成長法に依つて
成長させた薄膜を方向性があるエツチング液にて
一部エツチングして除去し、この操作を繰り返す
ことに依り表面の凹凸を緩和して平坦化すること
も行なわれているが、操作が複雑で実用的ではな
い。更にまた、スパツタ法を用いた薄膜形成の過
程で、イオン衝撃に依る物理的なエツチング作用
を利用し、或程度の平坦化を図ることができるの
も知られているが、操作に特殊な条件を必要とす
るので実施することは困難である。 To solve this problem, a technique has been developed to uniformly apply a liquid containing silicon to the substrate surface using a spin coating method to flatten it, but when an inorganic material such as the liquid is used, It is difficult to form a clean thin film. In addition, a thin film grown by vapor phase growth is partially etched using a directional etching solution, and this process is repeated to soften and flatten the surface. However, it is complicated to operate and is not practical. Furthermore, it is known that in the process of forming a thin film using the sputtering method, it is possible to achieve a certain level of planarization by utilizing the physical etching effect caused by ion bombardment, but this method requires special operating conditions. It is difficult to implement as it requires
発明の目的
本発明は、基板表面の凹凸を緩和し、平坦な表
面状態を得ることができる薄膜形成方法を提供す
るもので、半導体装置を製造する際に用いて好適
である。OBJECTS OF THE INVENTION The present invention provides a thin film forming method that can reduce unevenness on a substrate surface and obtain a flat surface state, and is suitable for use in manufacturing semiconductor devices.
発明の構成
本発明では、気相反応に依り薄膜を成長するガ
ス系と、成長する該薄膜をエツチングすることが
可能なガス系との混合ガス雰囲気に基板を配置
し、光を照射して薄膜成長反応とエツチング反応
とを同時に進行させるものである。Structure of the Invention In the present invention, a substrate is placed in a mixed gas atmosphere of a gas system that grows a thin film through a gas phase reaction and a gas system that is capable of etching the growing thin film, and the thin film is etched by irradiating the substrate with light. The growth reaction and the etching reaction proceed simultaneously.
薄膜の成長は、熱エネルギの供給を受けて進行
するので、本質的には基板の凹凸に沿う成長をす
ることになるが、エツチング作用は光の直進性に
依り方向性を持つたものとなり、従つて、それ等
が組み合うことに依り、基板に於ける凹凸の段差
部では、谷部分の膜のエツチング量より膜の成長
量の方が大になり、結果的に段差を解消するよう
な形で膜が残ることになる。 Thin film growth progresses in response to the supply of thermal energy, so it essentially grows along the irregularities of the substrate, but the etching action is directional due to the straightness of the light. Therefore, due to the combination of these factors, the amount of film growth at the uneven step portions of the substrate is greater than the amount of film etching at the valley portions, resulting in a shape that eliminates the step portions. A film will remain.
因に、方向性があるエツチング方法としては、
従来、リアクテイブ・イオン・エツチングなどの
方法があるが、それに依るエツチングでは雰囲気
の圧力を10-1〔Torr〕以下にしなければならず、
この状態に於ける薄膜の成長は難しいので実用的
ではない。 Incidentally, as a directional etching method,
Conventionally, there are methods such as reactive ion etching, but in order to perform etching using this method, the pressure of the atmosphere must be kept below 10 -1 [Torr].
Growing a thin film under this condition is difficult and therefore not practical.
本発明では、基本的に雰囲気圧力依存性がない
から、薄膜を充分に高い速度で成長させ得る条件
を設定できる。 In the present invention, since there is basically no dependence on atmospheric pressure, conditions can be set that allow the thin film to grow at a sufficiently high rate.
発明の実施例
第１図は本発明を実施する装置の一実施例を表
わすものである。Embodiment of the Invention FIG. 1 represents an embodiment of an apparatus for carrying out the present invention.
図に於いて、１は反応室、２は基板支持台、３
は基板、４は基板３を一定温度に加熱する為のヒ
ータ、５は光透過窓、６はガス送入管、７はガス
排出管、８はガス系、９は光をそれぞれ示してい
る。 In the figure, 1 is a reaction chamber, 2 is a substrate support stand, and 3 is a reaction chamber.
4 indicates a substrate, 4 a heater for heating the substrate 3 to a constant temperature, 5 a light transmission window, 6 a gas inlet pipe, 7 a gas discharge pipe, 8 a gas system, and 9 a light.
次に、この装置を使用して二酸化シリコン膜を
成長させる場合について説明する。 Next, the case of growing a silicon dioxide film using this apparatus will be described.
二酸化シリコン膜を成長するには、ガス系８と
して、モノシラン（SiH4）、酸素（O2）、四フツ
化炭素（CF4）の混合ガスを用いる。 To grow a silicon dioxide film, a mixed gas of monosilane (SiH 4 ), oxygen (O 2 ), and carbon tetrafluoride (CF 4 ) is used as the gas system 8 .
基板３は400〔℃〕の温度に保持することが必要
である。 It is necessary to maintain the substrate 3 at a temperature of 400 [° C.].
この状態で、反応室１内に前記混合ガスを導入
すると、
SiO4＋2O2→SiO2＋2Si2O
の反応に依つて、基板３上には二酸化シリコン
（SiO2）膜が成長する。 When the mixed gas is introduced into the reaction chamber 1 in this state, a silicon dioxide (SiO 2 ) film grows on the substrate 3 due to the reaction of SiO 4 +2O 2 →SiO 2 +2Si 2 O.
これを第２図及び第３図を参照しつつ具体的に
説明する。 This will be explained in detail with reference to FIGS. 2 and 3.
第２図は前記したように単純に二酸化シリコン
膜を成長させた場合を示していて、基板３上に被
膜１０が形成されているものとし、その上に二酸
化シリコン膜１１を形成してある。 FIG. 2 shows the case where a silicon dioxide film is simply grown as described above, and it is assumed that a film 10 is formed on the substrate 3, and a silicon dioxide film 11 is formed on the film 10.
この場合は、被膜１０に依る段差があるので、
これに忠実に沿うか、或いは、所謂オーバ・ハン
グするように二酸化シリコン膜１１が形成される
ものである。 In this case, since there is a step due to the coating 10,
The silicon dioxide film 11 is formed either faithfully along this line or so-called overhanging it.
しかし、第１図に見られるように、成長時に光
９を照射することに依り、混合ガス中のCF4が励
起状態になり、二酸化シリコン膜と接触するとそ
れをエツチングすることになる。尚、この光のフ
オトン・エネルギはCF4のＣ−Ｆ結合を解離する
のに充分な値であることが望ましい。本実施例で
は、水銀ランプから発生する波長2000〜2400〔Å〕
の光を利用してCF4を励起している。 However, as seen in FIG. 1, by irradiating the light 9 during growth, CF 4 in the mixed gas becomes excited, and when it comes into contact with the silicon dioxide film, it will be etched. Note that the photon energy of this light is preferably a value sufficient to dissociate the C--F bond of CF4 . In this example, the wavelength emitted from the mercury lamp is 2000 to 2400 [Å].
CF 4 is excited using the light of
第３図は光を照射して二酸化シリコン膜１２を
成長させた状態を表わしている。 FIG. 3 shows the state in which the silicon dioxide film 12 is grown by irradiating light.
二酸化シリコン膜１２のエツチングは基板３に
垂直な方向からなされているので段差部に於ける
膜厚の低下が少なくなり、段差はかなり緩和され
ている。 Since the silicon dioxide film 12 is etched in a direction perpendicular to the substrate 3, the decrease in film thickness at the step portion is reduced, and the step is considerably relaxed.
発明の効果
本発明に依れば、半導体装置を製造する際に於
ける薄膜形成工程で、基板が配置された反応室に
気相反応に依り薄膜を形成するガス系及び該薄膜
をエツチングすることが可能なガス系の混合ガス
を導入し、前記基板に光を照射した状態で薄膜成
長反応とエツチング反応の両方同時に行なうこと
に依り、段差が少ない薄膜を形成することができ
るので、基板表面は平坦になり、精密なパターン
を容易に形成することができ、配線の切断も生じ
ないから高集積化された半導体装置を製造する場
合に有効である。Effects of the Invention According to the present invention, in a thin film forming process in manufacturing a semiconductor device, a gas system for forming a thin film by a gas phase reaction in a reaction chamber in which a substrate is placed, and etching the thin film. By introducing a mixed gas capable of irradiating the substrate with light and performing both the thin film growth reaction and the etching reaction simultaneously, it is possible to form a thin film with few steps, so that the substrate surface is It is effective in manufacturing highly integrated semiconductor devices because it becomes flat, allows easy formation of precise patterns, and does not cause wiring to be cut.
第１図は本発明を実施する装置の一実施例を表
わす要部説明図、第２図及び第３図は本発明一実
施例を説明するための工程要所に於ける半導体装
置の要部切断側面図である。
図に於いて、１は反応室、２は基板支持台、３
は基板、４は基板３を一定温度に加熱する為のヒ
ータ、５は光透過窓、６はガス送入管、７はガス
排出管、８はガス系、９は光である。
FIG. 1 is an explanatory view of the main parts of an embodiment of a device for carrying out the present invention, and FIGS. 2 and 3 are main parts of a semiconductor device at key points in the process for explaining an embodiment of the present invention. FIG. In the figure, 1 is a reaction chamber, 2 is a substrate support stand, and 3 is a reaction chamber.
4 is a substrate, 4 is a heater for heating the substrate 3 to a constant temperature, 5 is a light transmission window, 6 is a gas supply pipe, 7 is a gas discharge pipe, 8 is a gas system, and 9 is a light.
Claims (1)
気相反応に依り薄膜を形成するガス系及び該薄膜
をエツチングすることが可能なガス系の混合ガス
を導入し、前記基板主面に略垂直な方向から光を
照射した状態で薄膜成長反応とエツチング反応の
両方を同時に行なつて前記段差が低減された薄膜
を成長させることを特徴とする薄膜形成方法。1. A mixed gas of a gas system that forms a thin film through a gas phase reaction and a gas system that is capable of etching the thin film is introduced into a reaction chamber in which a substrate with steps on the surface is placed, and approximately the main surface of the substrate is etched. A method for forming a thin film, which comprises growing a thin film with reduced steps by simultaneously performing both a thin film growth reaction and an etching reaction while irradiated with light from a vertical direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17202282A JPS5961124A (en) | 1982-09-30 | 1982-09-30 | Method for formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17202282A JPS5961124A (en) | 1982-09-30 | 1982-09-30 | Method for formation of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961124A JPS5961124A (en) | 1984-04-07 |
| JPH0456447B2 true JPH0456447B2 (en) | 1992-09-08 |
Family
ID=15934066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17202282A Granted JPS5961124A (en) | 1982-09-30 | 1982-09-30 | Method for formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961124A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682616B2 (en) * | 1984-10-11 | 1994-10-19 | キヤノン株式会社 | Deposited film formation method |
| WO1987000346A1 (en) * | 1985-07-02 | 1987-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a thin film |
| EP0241317B1 (en) * | 1986-04-11 | 1993-03-10 | Canon Kabushiki Kaisha | Process for forming deposited film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130369A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 |
-
1982
- 1982-09-30 JP JP17202282A patent/JPS5961124A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130369A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961124A (en) | 1984-04-07 |
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