JPH0453839B2 - - Google Patents
Info
- Publication number
- JPH0453839B2 JPH0453839B2 JP62137985A JP13798587A JPH0453839B2 JP H0453839 B2 JPH0453839 B2 JP H0453839B2 JP 62137985 A JP62137985 A JP 62137985A JP 13798587 A JP13798587 A JP 13798587A JP H0453839 B2 JPH0453839 B2 JP H0453839B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon
- raw material
- quartz crucible
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000002109 crystal growth method Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13798587A JPS63303894A (ja) | 1987-06-01 | 1987-06-01 | シリコン単結晶育成方法 |
| CA000568083A CA1305909C (en) | 1987-06-01 | 1988-05-30 | Apparatus and process for growing crystals of semiconductor materials |
| EP88108790A EP0293865B1 (de) | 1987-06-01 | 1988-06-01 | Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien |
| US07/201,018 US4936949A (en) | 1987-06-01 | 1988-06-01 | Czochraski process for growing crystals using double wall crucible |
| DE8888108790T DE3878990T2 (de) | 1987-06-01 | 1988-06-01 | Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. |
| US07/527,887 US5009862A (en) | 1987-06-01 | 1990-05-23 | Apparatus and process for growing crystals of semiconductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13798587A JPS63303894A (ja) | 1987-06-01 | 1987-06-01 | シリコン単結晶育成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63303894A JPS63303894A (ja) | 1988-12-12 |
| JPH0453839B2 true JPH0453839B2 (de) | 1992-08-27 |
Family
ID=15211362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13798587A Granted JPS63303894A (ja) | 1987-06-01 | 1987-06-01 | シリコン単結晶育成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63303894A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02107587A (ja) * | 1988-10-13 | 1990-04-19 | Mitsubishi Metal Corp | 半導体単結晶育成装置 |
| TW430699B (en) * | 1995-12-27 | 2001-04-21 | Mitsubishi Material Silicon Co | Single crystal pulling apparatus |
| TW503265B (en) * | 1995-12-28 | 2002-09-21 | Mitsubishi Material Silicon | Single crystal pulling apparatus |
| JP3533416B2 (ja) * | 1996-02-06 | 2004-05-31 | 三菱住友シリコン株式会社 | 単結晶引上装置 |
| JP3482979B2 (ja) * | 1996-04-09 | 2004-01-06 | 三菱住友シリコン株式会社 | 単結晶引上装置におけるヒーター電極溶損防止装置 |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP2015527295A (ja) * | 2012-09-10 | 2015-09-17 | ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ | 連続チョクラルスキー法及び装置 |
| CN112210820A (zh) * | 2020-09-10 | 2021-01-12 | 徐州鑫晶半导体科技有限公司 | 晶体生产工艺 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58204895A (ja) * | 1982-05-25 | 1983-11-29 | Nippon Telegr & Teleph Corp <Ntt> | 結晶引上げ方法および装置 |
| JPS61261288A (ja) * | 1985-05-14 | 1986-11-19 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
-
1987
- 1987-06-01 JP JP13798587A patent/JPS63303894A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58204895A (ja) * | 1982-05-25 | 1983-11-29 | Nippon Telegr & Teleph Corp <Ntt> | 結晶引上げ方法および装置 |
| JPS61261288A (ja) * | 1985-05-14 | 1986-11-19 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63303894A (ja) | 1988-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070827 Year of fee payment: 15 |