JPH0451568A - Color solid-state image sensing element and its manufacture - Google Patents

Abstract

PURPOSE:To enhance a resolution property by a method wherein color filters in which adjacent peripheral edges of the individual filters are surrounded by partition layers composed of organic silicon material layers containing a light-absorbing agent are formed inside the same plane on a flattening layer. CONSTITUTION:A transparent flattening layer 103 in which at least the surface is constituted of an organic silicon material is formed on a semiconductor substrate 100 on which photodetection parts 101 used to execute a photoelectric conversion operation in advance, scanning parts 102 used to take out an electric signal generated at the photodetection parts and a passivation film used to protect said photodetection parts and said scanning parts have been formed. Individual color filters 108 to 111 are formed in positions corresponding to the photodetection parts 102 inside the same plane via partition walls 106a' constituted of an organic silicon material 106a containing a light-absorbing material. A transparent protective film 106 is formed on the color filters; in addition, convex microlenses 112'' are formed in positions corresponding to the photodetection parts on the transparent protective film 106. Thereby, it is possible to ensure a high sensitivity and a high-resolution property without an irregularity in spectroscopic sensitivity and without a color blur.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a color solid-state image sensor and a method for manufacturing the same;
In particular, the present invention relates to the structure of a color filter, the structure of a microlens, a method of manufacturing them, and a method of opening a bonding pad portion.

[Conventional technology]

A color filter is placed on a solid-state imaging device such as a CCD or MID, which has a light receiving part that performs photoelectric conversion and a scanning part that extracts the electrical signals generated in the light receiving part, which is covered with a passivation film on a semiconductor substrate. As a method of forming, for example, Proceedings of the 2nd Photofabrication Technology Symposium, pp. 23-27 (1987)
As described in , the method shown below is common.

That is, the uneven substrate surface for the light receiving part and the scanning part is made of polyglycidyl methacrylate (hereinafter referred to as PGMA).
Thermosetting and positive type Dae such as
After applying and flattening a transparent material that also serves as a pUV resist, a film of a photosensitive dyeable material is formed by adding ammonium dichromate or the like to protein such as gelatin as a photosensitizer. Next, after forming a pattern of the dyeable material at a desired position by exposure and development, it is dyed with the first color dye, and then a protective film such as PGMA is applied to the first color filter to prevent color mixing. to cover. In this method, the above steps are repeated for a desired number of colors to form a three-color color filter.

In addition, this type of filter formation method in which the filters are stacked on the surface of the solid-state image sensor substrate as described above is usually called an on-wafer color filter manufacturing method, but in this method, bonding pads forming external electrodes are The department is
Because it is covered with a flattening layer or protective layer such as PGMA,
Each time a flattening layer or protective layer is formed, do you expose and develop it?
Alternatively, by exposing and developing at the final stage, the laminated film on the bonding pad portion is etched away and selectively opened.

In addition, as related to such on-wafer type color filters and their manufacturing methods, for example, the Journal of the Television Society, Vol. 37, No. 7, p. 553 (198
3) and Toshiba Review, Volume 43, No. 7, No. 548
Page (1988).

[Problem to be solved by the invention]

However, the structure of the conventional color filter and its manufacturing method have the following problems.

In other words, the composition of natural proteins such as gelatin and photosensitizers such as ammonium dichromate used as the photosensitive dyeable material layer causes swelling, which deforms the filter layer, resulting in low resolution and high resolution. It is difficult to

In addition, since the filter layer and the protective layer covering its surface form a pair and form a laminated structure with a large number of layers corresponding to the number of filter colors, each filter layer is not aligned on the same plane, resulting in a step difference. Light scatters between adjacent filters, creating color fringing and reducing resolution.

Therefore, an object of the present invention is to solve the above-mentioned conventional problems, and the first object is to provide a color filter that is formed with high resolution in the same plane on a flattened substrate. A second object of the present invention is to provide a color solid-state image sensor and a method for manufacturing the same.

[Means to solve the problem]

In order to achieve the above-mentioned first objective, first, the structure of a color solid-state image sensor was made as follows.

Typical examples are explained using drawings as shown in Figure 1 (
e) and FIG. 2(c) show the main cross sections, and FIG. 3 shows the plan view of FIG. 1(e). A transparent flattening layer 103 whose at least the upper surface is made of an organic silicon material is provided on the semiconductor substrate 100 on which a passivation film is formed to protect the scanning section 102 for extracting signals and the light receiving section and the scanning section. Each of the color filters 108 to 111 is disposed in the same plane on the flattening layer 103 at a position corresponding to the light receiving part 102 via a partition wall 106a' made of an organic silicon material layer 106a containing a light absorbing agent. There is. Then, a transparent protective film 106 was formed on the color filter, and a convex microlens 1121 was further formed on the transparent protective film at a position corresponding to the light receiving section.

To describe the means for achieving the above object in more detail, the first object of the present invention is to (1) provide a light receiving section that performs photoelectric conversion, a scanning section that extracts an electrical signal generated in the light receiving section, and a scanning section that connects the light receiving section with the scanning section. A transparent planarization layer, at least the upper surface of which is made of an organic silicon material, is disposed on a semiconductor substrate on which a passivation film is formed to protect the scanning section, and a region of the planarization layer located above the scanning section is provided with a light-absorbing layer. A partition wall layer made of an organic silicon material layer containing a light absorbing agent is provided, a color filter layer is provided in a region located on the light receiving part, and each adjacent filter periphery is made of an organic silicon material layer containing a light absorbing agent. A color solid-state imaging device comprising a color filter surrounded by a partition layer in the same plane on the flattening layer, and (2) a partition layer made of an organic silicon material layer containing the light absorbing agent and a color Also, by the color solid-state imaging device according to (1) above, wherein a protective film made of a transparent material is disposed on the layer having the filter layer.

(3), by the color solid-state imaging device according to (2) above, in which convex microlenses are disposed on each of the color filter layers via a protective film made of a transparent material, and (4), In the color solid-state imaging device according to (1) above, the transparent flattening layer is made of an organic silicon material layer, and (5) the transparent flattening layer is made of an organic silicon material layer on a base made of an organic polymer material layer. Also, by the color solid-state imaging device according to the above (1), which is composed of a composite layer in which material layers are laminated.

(6) The color solid-state image sensor according to (2) above, wherein the protective film made of the transparent material is made of an organic silicon material layer, and (7) the convex microlens is made of an organic silicon material layer or This is achieved by the color solid-state imaging device described in (3) above, which is made of a polymeric material.

Here, the materials constituting the color solid-state image sensor of the present invention will be explained.

First, the above (1), (4), (5), and (6) organic silicon material layers are partially hydrolyzed alkoxysilane oligomers, thermally crosslinkable polyorganosilsesquioxane,
It is preferable that the layer is composed of a material layer containing at least one material selected from polyorganosilsesquioxane and polyorganosilsesquioxane as a main component. ), also the product name H8G (manufactured by Hitachi Chemical), and the product name TS consisting of thermally crosslinkable polyorganosilsesquioxane.
IR-205 (manufactured by Toshi Dow Corning Silicone)
, trade name TS consisting of polyorganosilsesquioxane
IR-105 (manufactured by Toshi Dow Corning Silicone)
etc.

The partition layer made of an organic silicon material layer containing a light absorbing agent as described in (1) above may be one in which the organic silicon material contains a light absorbing agent capable of absorbing at least light of a wavelength that is sensitive to the light receiving part. As the light absorbing agent, for example, pigments such as carbon black and aniline black, and other dyes may be used, and black colors are preferable. Although a small amount of the light absorbing agent has a certain effect, it is preferably 1 to 20% based on the organosilicon resin material. Examples of the above-mentioned carbon black include Dispe, a trade name manufactured by Dainippon Ink and Chemicals.
rse Black 5DP-928, Denka Black (trade name manufactured by Denki Kagaku Kogyo Co., Ltd.), and aniline black such as Diamond Bla, a trade name of Sansui pigment layer.
ck, Tokyo Shikizai product name No. 25upper Bla
Examples include ck.

The organic polymer material layer described in (5) above is transparent,
Any organic polymer material layer with excellent heat resistance, adhesion, planarization ability, etc. may be used, such as transparent polyimide made by curing a polyimide precursor with end-capped molecular ends by heating, etc., or deep UV resist material. etc.

Examples of the organosilicon material described in (7) above include resist materials having an alkali-soluble organosilicon resin as a matrix resin. As such alkali-soluble organosilicon resin, for example, the following structural formula (I
) [where n is a positive integer, m is a positive integer including zero, and n / (n + m) is 0.4-1.03 etc. .

Furthermore, as a resist material using the above formula (1) as a matrix resin, α represented by the formula (1) and the following formula (II)
- diazoacetoacetate [wherein R1 is a residue of a polyhydric alcohol, for example, a residue of a fatty acid polyhydric alcohol such as cholic acid alkyl ester, pentaerythritol, etc.] or a composition of formula (1) and 0-naphthoquinone diazide represented by the following formula (m) [however, R
2 is a polyhydroxybenzophenone residue, for example, 2
, 3,4-trihydroxybenzophenone and 2.3.4
．． 4'-Tetrahydroxybenzophenone residues, etc.] and the like.

The compositions of formula (1) and formula (II) shown here are 1
For example, in JP-A-1-80944, formula (I)
A composition of formula (m) is already known from Japanese Patent Application Laid-open No. 159141/1983.

Examples of the organic polymer material layer described in (7) above include a resist material layer using an alkali-soluble organic polymer material as a matrix resin.

Examples of such alkali-soluble organic polymer materials include polymers containing hydroxystyrene, polymers containing acrylic acid, polymers containing methacrylic acid, and polymers containing alcoholic decomposition products of maleic anhydride.

The material of the color filter used here may be any dyeable material and is not limited to a specific substance.

Well-known photosensitive dyeable materials can be used, such as compositions of natural proteins and ammonium dichromate, compositions of synthetic water-soluble resins and ammonium dichromate, compositions of synthetic water-soluble resins and azide compounds, etc. can. However, the dyeable material of the color solid-state imaging device of the present invention does not essentially require photosensitivity.

Among the above second objects, the first manufacturing method whose main purpose is to manufacture a color filter includes (9) a light receiving section that performs photoelectric conversion, a scanning section that extracts the electric signal generated in the light receiving section, and the A step of forming a transparent planarization layer, at least the upper surface of which is made of an organic silicon material, on a semiconductor substrate on which a passivation film for protecting a light receiving section and a scanning section has been formed in advance, and a step of forming a transparent planarization layer on the planarization layer. a step of forming a dyeable material layer; a step of forming an organosilicon resist on the dyeable material layer, and forming a pattern of resist remaining at a position corresponding to the light-receiving area by exposure and development; , selectively etching the dyeable material with oxygen-containing gas plasma using the organosilicon resist pattern as a mask to form a pattern of the dyeable material layer remaining at a position corresponding to the light-receiving area; a step of peeling off a silicon-based resist pattern; a step of forming an organic silicon material layer on the dyeable material layer pattern; and a step of forming an organic resist on the organic silicon material layer, followed by exposure and development. forming a resist cutout pattern at a predetermined position of the dyeable material layer pattern; and etching the organic silicon material layer using the resist pattern as a mask to selectively remove the predetermined dyeable material layer pattern. a step of exposing the resist pattern, a step of peeling off the resist pattern, a step of dyeing the predetermined dyeable material layer pattern whose surface is exposed with a predetermined first color, and a step of dyeing the dyeable material layer pattern with a predetermined first color. A series of steps from forming an organic silicon material layer on top to dyeing a predetermined dyeable material layer pattern with the first color are repeated multiple times depending on the number of colors constituting the color filter. This is achieved by a method of manufacturing a color solid-state image sensor, which comprises the steps of: forming color filters of a predetermined number of colors in the same plane.

A second manufacturing method for manufacturing the color solid-state image sensor described in (1) above includes (10) a light receiving section that performs photoelectric conversion, a scanning section that extracts an electrical signal generated in the light receiving section, and the light receiving section; A step of forming a transparent flattening layer, at least the upper surface of which is made of an organic silicon material, on a semiconductor substrate on which a passivation film has been previously formed to protect the scanning section; a step of forming an organosilicon-based resist on the dyeable material layer, and forming a pattern of remaining resist at a position corresponding to the light-receiving area by exposure and development; a step of selectively etching the dyeable material with oxygen-containing gas plasma using a silicon-based resist pattern as a mask to form a residual pattern of the dyeable material layer at a position corresponding to the light-receiving area; a step of peeling off the pattern, a step of forming an organic silicon material layer containing a light absorbing agent over the entire surface of the substrate including the dyeable material layer pattern, and forming an organic resist onto the organic silicon material layer. , a step of forming a punched resist pattern at a predetermined dyeable material layer pattern by exposure and development, and etching the organic silicon material layer containing the light absorbing agent using the resist pattern as a mask to form the predetermined dyeable material layer. a step of selectively exposing the surface of the dyeable material layer pattern; a step of peeling off the resist pattern;
A predetermined dyeable material layer pattern is dyed with a first color from a step of dyeing with a different color and a step of forming an organic silicon material layer containing a light absorbing agent on the dyeable material layer pattern. A method for manufacturing a color solid-state image sensor, comprising the steps of repeating a series of steps up to the step multiple times according to the number of colors constituting the color filter, and forming color filters of a predetermined number of colors in the same plane. By and also (
11) Following the final manufacturing step in the method for manufacturing a color solid-state image sensor described in (9) or (10) above,
This is achieved by the method for manufacturing a color solid-state image sensor described in (2) above, which includes the addition of a step of forming an organic silicon material layer as a transparent protective film.

Next, the method for manufacturing the first color solid-state image sensing device of the present invention, whose main purpose is to manufacture this color filter, will be explained in more detail with reference to FIG.

5(a) on a semiconductor substrate 100 on which a light receiving section 101 that performs photoelectric conversion, a scanning section 102 that extracts an electric signal generated in the light receiving section, and a passivation film that protects the light receiving section and the scanning section are formed. As shown in the figure, a transparent flattening layer 103 whose upper surface is made of an organosilicon material, a dyeable material 104 on the flattening layer 103, and an organosilicon resist on the dyeable material. A resist pattern 105' is formed at a position corresponding to the light receiving section 101 by exposure and development. Thereafter, as shown in FIG. 5(b), the dyeable material 104 is selectively etched with oxygen-containing gas plasma using the organosilicon resist pattern 105' as a mask, and the stainable material 104 is etched at a position corresponding to the light receiving part 101. A pattern 104' is formed leaving the dyeable material 104, and then the organosilicon resist pattern ios' is peeled off. Thereafter, as shown in FIG. 5(c), an organic silicon material 106 is applied on the pattern 104' of the dyeable material, and then the organic silicon material 106 is further applied on the pattern 104' of the dyeable material.
An organic resist 107 is formed on the organic resist 107, and a cut-out pattern 107' of the resist is formed at the position of a desired dyeable material pattern by exposure and development. Thereafter, as shown in FIG. 5(d), the organic silicon material 10 whose surface is selectively exposed using this resist pattern 107'' as a mask.
6 is etched with fluorine-based plasma or a fluorine-based etchant to selectively expose the underlying dyeable material pattern 104', and then this resist pattern 107' is peeled off. Subsequently, the pattern of the exposed surface of the dyeable material is dyed with a predetermined filter color.

A series of steps from the organic silicon material film formation step shown in FIG. 5(c) to the dyeing step shown in FIG. 5(d) described above are repeated a number of times (multiple times) corresponding to the number of colors constituting the filter. , color filters 108, 109, 1 with a predetermined number of colors
A color solid-state image sensing device in which 10 and 111 were formed in the same plane was obtained.

Thereafter, as shown in FIG. 5(e), a color solid-state imaging device was obtained in which an organic silicon material layer 106 was formed as a transparent protective film.

Next, the method for manufacturing the second color solid-state imaging device for obtaining the color solid-state imaging device of the above (1) of the present invention will be explained in more detail with reference to FIGS. 1 and 3.

On a semiconductor substrate 100 on which a light receiving section 101 that performs photoelectric conversion, a scanning section 102 that extracts an electric signal generated in the light receiving section, and a passivation film that protects the light receiving section and the scanning section are formed, as shown in FIG. As shown in the figure, a transparent flattening layer 103 whose upper surface is made of an organosilicon material, a dyeable material 104 on the flattening layer 103, and an organosilicon resist on the dyeable material. A resist pattern 105' is formed at a position corresponding to 1 inch of the light receiving area by exposure and development. Thereafter, as shown in FIG. 1(b), the dyeable material 104 is selectively etched with oxygen-containing gas plasma using the organosilicon resist pattern 105'' as a mask.
Leave dyeable material 104 at the position corresponding to 01 Pattern 1
04' is formed, and then the organosilicon resist pattern 105' is peeled off. Note that the steps up to now are the same as the fifth step explained in the first method for manufacturing a color solid-state image sensor.
This is the same process as in Figures (a) to (b).

Thereafter, as shown in FIG. 1(c), an organic silicon material 1 containing a light absorbing agent is placed on the pattern 104' of the dyeable material.
Further, an organic resist 107 is formed on the organic silicon material 106a, and a cut-out pattern 107' of the resist is formed at the position of a desired pattern of the dyeable material by exposure and development. Thereafter, as shown in FIG. 1(d), the surface of the organic silicon material 106a is selectively exposed using this resist pattern 107' as a mask.
After selectively exposing the underlying dyeable material pattern 104' by etching with fluorine-based plasma or fluorine-based etchant, this resist pattern 107' is peeled off. Subsequently, the pattern of the exposed surface of the dyeable material is dyed with a predetermined filter color.

The series of steps from the above-mentioned film formation process of the organic silicon material containing the light absorbing agent shown in FIG. 1(c) to the dyeing process shown in FIG. times), the color filter 108 of a predetermined number of colors is
, 109, 110, and 111 were each surrounded by a partition layer 106a' composed of an organic silicon material layer 106a containing a light absorbing agent, and a color solid-state image sensor was obtained in which the layers were formed in the same plane. In addition, FIG. 3 shows a plan view of FIG. 1(e), and each color filter 108, 109, 110,
It can be seen that 111 is surrounded by the partition layer 106a'.

Thereafter, as shown in FIG. 1(a), a color solid-state image sensing device was obtained in which an organic silicon material layer 106 was formed as a transparent protective film. Next, among the second purposes above, the manufacturing method whose main purpose is to manufacture microlenses is as follows: (12) After the step of forming the transparent protective film described in (11) above, a deep UV resist is formed. The above (3) is formed by adding a step of forming a residual pattern of resist at a position corresponding to the light-receiving area by exposure and development, and a step of heating the residual pattern of resist to form a convex microlens. ) According to the method for manufacturing a color solid-state image sensor described in (13), after the step of forming the transparent protective film described in (11) above, a UV resist is formed, and the exposure and
The above (3) is formed by adding a step of forming a residual pattern of the resist at a position corresponding to the light-receiving area by development, and a step of exposing the entire surface of the resist pattern to light and then heating it to form a convex microlens. This is achieved by the method for manufacturing a color solid-state image sensor described in ). In the lens manufacturing process, in the manufacturing method (12) above, only the remaining pattern of the resist is heated, but in the manufacturing method (13), the remaining pattern of the resist is heated after the entire surface is exposed. This whole surface exposure improves the light absorption characteristics of the UV resist. In other words, DeepUV
In the case of a resist, the absorption of wavelengths of 400 nm or more is small, whereas in the case of a UV resist, the absorption is so large that it cannot be ignored, and full-surface exposure is required to reduce this light absorption characteristic.

Furthermore, regarding the specific manufacturing method of this microlens,
This will be explained using FIG. 2. As shown in FIG. 2(a), on the transparent protective film 106,
A Dsep UV resist 112 is formed. Next, the second
As shown in FIG. 3B, by exposure and development, a residual resist pattern 112' is formed at a position corresponding to the light-receiving area. Further, as shown in FIG. 2C, the remaining pattern 112' of the resist was heated to form a convex microlens 112M.

On the other hand, it was also possible to manufacture microlenses by the first-order method.

As shown in FIG. 2(a), on the transparent protective film 106,
A UV resist 112 is formed. After that, Fig. 2(b)
As shown in FIG. 3, a resist remaining pattern 112' is formed at a position corresponding to the light-receiving area by exposure and development, and then the entire resist remaining pattern 112' is exposed to light. Furthermore, as shown in FIG. 2(c), the resist pattern 112' is heated to form a convex microlens 112.
1 was formed.

Finally, among the above second objects, the manufacturing method whose main purpose is to open the bonding pad portion is (14), in which the transparent planarization layer is formed on the bonding pad portion formed in advance on the solid-state image sensor substrate. A step of forming an organic resist on a laminated film consisting of a flattening layer and a transparent protective layer that are sequentially laminated in a transparent protective film forming step after the forming step and a color filter forming step; A step of forming a predetermined organic resist pattern by exposing through a predetermined mask pattern for exposure from the substrate and developing it, and dry etching the laminated film using the organic resist pattern as a mask to form a bonding pad portion. According to the method for manufacturing a color solid-state image sensor described in 9 or 10 above, which includes the step of exposing and opening, (15) dry etching the laminated film including the transparent flattening layer and the transparent protective layer on the bonding pad portion. In the step of exposing the bonding pad portion provided on the solid-state image sensor substrate by opening the bonding pad portion provided on the solid-state image sensor substrate, in the case where the laminated film is formed of an organic silicon-based material, the organic polymer is In the case where the bonding pad is made of a material, the method for manufacturing a color solid-state image sensor according to the above (14), which comprises a bonding pad processing step including a step of dry etching using oxygen-containing gas plasma, also (16),
A predetermined organic resist pattern is formed by forming an organic resist film on the transparent flattening layer laminated on the bonding pad portion disposed on the solid-state image sensor substrate, exposing it to light through a predetermined mask, and developing it. a step of dry etching the transparent planarization layer using the organic resist pattern as a mask to open the bonding pad portion, and a step of leaving the organic resist as a surface protective layer of the color filter. This is achieved by the method for manufacturing a color solid-state image sensor described in (14) above, which includes a bonding pad portion processing step.

The method of opening the bonding pad portion will be explained in more detail with reference to FIG.

As shown in FIG. 4(a), the bonding pad 113
A transparent flattening layer 103 and a transparent protective film 106 are laminated thereon. In the case of the color solid-state imaging device described in (7) above, in which the microlens 1121 is made of an organic silicon material layer, first, an organic resist 114 is formed on the entire surface, and is exposed and developed to form the organic resist on the bonding pad 113. A punching pattern 114' is formed. Thereafter, as shown in FIG. 3(b), the organic silicon material 106 on the bonding pad 113 is etched using fluorine-based plasma using the resist pattern 114' as a mask. As a result, the protective film 106 made of organic silicon material
Furthermore, when the flattening layer 103 is entirely made of an organic silicon material, the flattening layer 103 is also formed by coating an organic silicon material on a base made of an organic polymer material. Even in a two-layer stack, the organosilicon material on the top surface is removed. Next, as shown in Figure 4 (C),
Organic polymer material exposed on the surface by oxygen-containing plasma (
By simultaneously etching the organic resist batten 114' (or the organic polymer material layer remaining as the base of the organic resist batten 114' and the planarizing layer 103), the bonding pad 113 portion could be opened.

On the other hand, in the case of the color solid-state image sensor described in (7) above, in which the microlens 112g is made of an organic polymer material layer,
First, after forming an organic resist 114 on the entire surface, a cutout (turn 114') of this organic resist is formed on the bonding pad portion 113 by exposure and development. Thereafter, a pattern 114' of the resist is formed. The transparent protective film 106 on the bonding pad is etched using fluorine-based plasma using a mask. If the planarization layer 103 is made of only an organic silicon material, the planarization layer 103 is also etched, so the organic resist film 114 is then etched. All you have to do is peel it off.

Even when the flattening layer 103 is composed of a laminate of an organic polymer material and an organic silicon material, the organic silicon material on the top surface is removed, and the organic polymer on the bonding pad exposed to the surface is then exposed to oxygen-containing plasma. Etching the material,
Thereafter, by peeling off the organic resist batten 114', the bonding pad portion could be opened.

However, in this case, it was necessary to form the organic resist film 114 thick so that the microlens 112t would not be etched.

Specific examples of these materials are as described above, and in particular, as organosilicon resists that are important for this manufacturing method, resist materials whose matrix resin is the alkali-soluble organosilicon resin used in the microlens material, etc. can be mentioned.

[Effect]

In the color solid-state image sensing device and method for manufacturing the same of the present invention, an organic silicon material having excellent transparency and flattening ability is used for the flattening layer. As a result, the film thickness difference between the color filters was reduced, and variations in spectral sensitivity, scattering of incident light, and color fringing were eliminated.

The use of an organic silicon material for the flattening layer also serves as a stopper layer for dry etching of the color filter by oxygen plasma, as will be described later. However, depending on the material, it is difficult to form a thick organosilicon material, so the roles of the planarizing layer and the etching stopper layer are separated, and the planarizing layer is made of an organic polymer material, and the etching stopper layer is made of an organic polymer material. It was also possible to use silicon materials. For such an organic polymer material, five molecular ends are end-capped, the symmetry of the polymer backbone is lowered to improve flattening ability, and the polymer backbone is made non-conjugated to improve transparency. , a melt-flattened transparent polyimide made by curing a polyimide precursor was particularly good.

Furthermore, in the color solid-state image sensor and the manufacturing method thereof of the present invention, the photosensitive dyeable material is not patterned by photolithography, but the dyeable material is patterned by oxygen plasma using an organosilicon resist pattern as a mask. Dry processing essentially eliminates the need for photosensitivity in the dyeable material. Also, there is no swelling during patterning.

Furthermore, by using the organosilicon thread Deep UV resist, fog due to reflected light from the substrate was eliminated, and the resolution of the dyeable material pattern was extremely high.

In addition, by forming a pattern of dyeable material on the same plane on the flattening layer and repeating partial dyeing using the pattern of organic silicon material as a mask, color filters of multiple colors were formed on the same plane. This eliminates the need for a multilayer structure of filters and protective layers, which eliminates the scattering of incident light and the occurrence of one-color bleeding. In particular, when repeating selective dyeing of dyeable material patterns using the organic silicon material pattern as a mask, if the organic silicon material pattern containing a light absorber is used as a mask, the filter patterns after dyeing will be adjacent to each other. A pattern of the organic silicon material containing the light absorbing agent remains as a partition wall around each filter, and this partition wall constitutes a black matrix. Therefore, this partition wall absorbs and blocks the scattered light passing through the adjacent filter or the obliquely incident light, so the high sensitivity of the color filter is not lost (no color blurring), and a high-definition color solid-state image sensor can be realized. is possible.

Note that the organosilicon resist is not particularly limited in view of its role, but in consideration of removability, a positive resist is preferable, and an alkaline development method is more preferable.

Here, compositions of formula (I) and formula (II), and compositions of formula (I)
) and the composition of formula (III) demonstrated its usefulness.

Next, in the color solid-state image sensor and the method for manufacturing the same according to the present invention, since the white clay microlens is formed on the top layer, the apparent aperture ratio is increased and the amount of effective light is increased, resulting in improved sensitivity. Here, general-purpose UV and deep UV resists can be used as the microlens material, but in the case of an alkaline development type resist that uses an alkali-soluble resin as the matrix resin, care must be taken regarding heat resistance reliability regarding transmittance. The organosilicon matrix resin is one of formula (I), and the organic polymer matrix resin is a polymer containing hydroxystyrene, preferably a polymer containing hydroxystyrene and made alkali-soluble by reducing the hydroxystyrene component. Polymers are preferred. After patterning, these resists can be made into white clay microlenses using heat flow. However, in the case of UV resists, bleaching (to reduce the absorption of light with a wavelength of 400 nm or more) by exposing the entire surface to light is required before baking. )is necessary.

Furthermore, it has become possible to open the bonding pad portion all at once by dry etching at the final stage. At that time, since organic polymer material and organic silicon material are laminated on the bonding pad,
It is necessary to replace the plasma gas once. That is, when etching an organic silicon material layer, it is sufficient to use a plasma gas containing fluorine, and when etching an organic polymer material layer, it is sufficient to use a plasma gas containing oxygen.

As a result of the above, it has become possible to manufacture a color solid-state imaging device with high sensitivity, high resolution, and little variation in spectral sensitivity through a simple process.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

Embodiment 1 First, as shown in FIG. 5(a), a light receiving section 101 and a scanning section 102 are coated with a semiconductor substrate 100 covered with a passivation film, and are coated with Dow Corning silicone as an organic silicon material. TSIR-205 (trade name) was coated to a thickness of 1 μm and beta-baked at 150° C. for 30 minutes to form a flattening layer 103.
And so. After that, Nippon Kayaku Layer (trade name: CFR633L1) was applied to a thickness of 0.8 μm, and baked at 90°C for 30 minutes.
A dyeable material layer 104 is used as a filter material. Subsequently, a composition of formula (I) and formula (I[I) (trade name RU-1600P manufactured by Hitachi Chemical Co., Ltd.) was applied to a thickness of 1 μm,
Bake at 90°C for 30 minutes to form organosilicon resist 10.
A film of 0.66W was then exposed through a predetermined mask (not shown) so as to form a remaining pattern of the resist 105 at a position corresponding to the light-receiving area 101.
A resist mask pattern 105' was formed by developing and rinsing with a t% M e 4N OH aqueous solution.

Next, as shown in FIG. 5(b), using the resist mask pattern 105' as a mask, the stainable material layer 104 is selectively etched with plasma of Q2 gas containing 10% CF4, and then the resist mask pattern 105' is used as a mask. After exposing the entire surface of the pattern 105', a developer was placed on the substrate, and the substrate was oscillated and rotated at high speed to peel off the resist mask pattern 105' to form a dyeable material layer pattern 104'.

Subsequently, as shown in FIG. 5(c), on this dyeable material layer pattern 104', an organic silicon material 106, which is a partial dyeing mask material, is coated with the product name TSIR manufactured by Toshi Dow Corning Silicone. -205 was applied to a thickness of 1 μm,
After baking at 150℃ for 30 minutes,
FPR-800 was applied to a thickness of 1 μm and baked at 90° C. for 30 minutes to form a positive resist layer 107. Next, exposure is carried out through a predetermined mask (not shown) so as to form a cut-out pattern 107' of the positive resist layer 107 at a desired position of the dyeable material layer pattern 104';2.
It was developed with a 38wt% Me4NOH aqueous solution and rinsed to form a resist pattern 107'.

Thereafter, as shown in FIG. 5(d), the organic silicon material 106 is selectively etched using CF4 gas plasma to expose the surface of the predetermined dyeable material layer pattern 104', and then the resist is etched. After exposing the entire surface of the pattern 107', a developer is placed on the substrate and shaken.

The resist pattern 107' was peeled off by high speed rotation.

Next, the dyeable material reservoir pattern 104' was selectively dyed with a desired first color dye. The following solution was used as a staining solution: 6 cyanide cyanin 6B (trade name of Nippon Kayaku Co., Ltd., KayanolCyanin).
e 6 B) Yellow: Milling Yellow 0 (Product name of Nippon Kayaku layer, Kayanol Milli
ng Y yellow O) Green: Acid cyanine green G (product name of Nippon Kayaku layer, Kaya
nolCyanine Green G) Magenta: Acid Cyanine 5R (Product name of Nippon Kayaku layer, Kayanol Millin
g 5 R) Furthermore, each process from the film formation process of TSIR-205 shown in FIG. 5(c) to the dyeing process shown in FIG. 5(d) is performed using the remaining dyeable materials. The same process is performed for the layer pattern 104' to form the second color, third color, and fourth color, respectively.
Perform color dyeing.

Finally, TSIR-20 is used as the transparent protective film 106.
5 was formed into a 1 μm thick film, and
Filter patterns 108 and 109 as shown in figure (e)
．． A solid-state image sensor in which color filters 109 and 110 were formed in the same plane was obtained.

Example 2゜This example does not follow each step of the above-mentioned Example 1, but the fifth
The organic silicon material layer (T S I
R-205) In the film forming process of 106, this organic silicon material containing a light absorbing agent was used to produce a color solid having a black matrix type color filter as shown in the plan view of Fig. 3. 1 shows an example of an image sensor and a method for manufacturing the same.

The explanation below will be based on FIGS. 1 and 3.
@The contents of (a) to (b) are as shown in Fig. 5 (a) to (b) of Example 1.
Since it is the same as b), the explanation will be omitted, and the explanation will start from FIG. 1(c).

First, as shown in FIG. 1(c), a substrate 10 on which a dyeable material layer pattern 104' has been formed in the step of FIG. 1(b) is prepared.
0, an organic silicon material 10 serving as a partial dyeing mask material
As 6a, TSIR-205 manufactured by Toshi Dow Corning Silicone was applied to a thickness of 1 μm and heated at 150°C for 3
Bake for 0 minutes.

However, this organic silicon material (resin) 106a contains 1 to 20 wt of carbon black fine powder as a light absorbing agent.
% dispersion and inclusion. After this, Tokyo Ohka Layer's product name 0FPR-800 was applied as a mask material to a thickness of 1-90 mm.
℃ for 30 minutes, and a positive resist layer 107 was formed. Next, the punched pattern 10 of this positive resist layer 107 is formed at the position of the desired dyeable material layer pattern 104'.
The resist pattern 107 is exposed through a predetermined mask (not shown) so as to form a resist pattern 107, developed with Z, 38 wt% Me, NOH aqueous solution, and rinsed.
' was formed.

Thereafter, as shown in FIG. 1 (1), the organic silicon material 106a is selectively etched with CF4 gas plasma to expose the surface of the predetermined dyeable material layer pattern 104', and then, After exposing the entire surface of the resist pattern 107', a developer is placed on the substrate and shaken.

The resist pattern 107' was peeled off by high speed rotation.

The dyeable material layer pattern 104' was then selectively dyed with a desired first color dye. The following solution was used as the staining solution.

Cyanazidcyanin 6B
e 6 B) Yellow: Milling Yellow 0 (Product name of Nippon Kayaku layer, Kayanol Milling
Yellow O) Green: Acid Cyanine Green G (Nippon Kayaku layer product name, Kayanol)
Cyanine Green G) Magenta:
Acid Cyanine 5R (Product name of Nippon Kayaku layer, Kayanol Millin)
g 5 R) Furthermore, each process from the TSIR-205 film forming process shown in FIG. 1(C) to the dyeing process shown in FIG. 1(d) is performed using the remaining dyeable materials. The same process is performed for the layer pattern 104' to form the second color, third color, and fourth color, respectively.
Perform color dyeing.

Finally, TSIR-20 is used as the transparent protective film 106.
5 was formed into a 1 μm thick film, and
Filter pattern log, 10 as shown in figure (e)
9. A solid-state imaging device was obtained in which color filters composed of 109 and 110 were formed in the same plane. The organic silicon material 106a' that remains when the selective dyeing of the dyeable material layer pattern 104' is completed using the organic silicon material 106a as a mask is actively applied to the area between each adjacent filter. It is left as a partition wall to form a black matrix. This situation is shown in a plan view in FIG.

Each filter is made of this remaining organic silicon material 106a.
' are arranged in the black matrix pattern as partition walls, so the scattered light and reflected light from adjacent filters are absorbed by the partition walls, significantly improving the resolution of the filter, which is better than the configuration of Example 1. is also significantly better. Also,! The lil manufacturing method is almost the same as in Example 1, without increasing the number of steps, as shown in Fig. 1(c).
In the process, it is only necessary to incorporate a light absorbing agent into the organic silicon material (resin) 106a, which serves as a mask when selectively dyeing the dyeable material layer pattern 1o4, which will eventually become a filter, and is excellent in this respect as well. .

Although carbon black was used as the light absorbing agent in this example, other organic silicon materials (resins) of this type may also be used.
Needless to say, it is possible to use a colored substance (pigment) that can be dispersed in 6a, or to dye an organosilicon resin with a dye, as long as it has the function of absorbing light.

Example 3゜On the semiconductor substrate 100 in which the light receiving section 101 and the scanning section 102 are covered with a passivation film in advance, one layer of Tokyo Ohka Layer (trade name: OCD) is used as an organic silicon material constituting a flattening layer.
It was applied to a thickness of μm and baked at 350° C. for 30 minutes to form a flattening layer 103. Thereafter, a color solid-state image sensor was obtained in the same manner as in Examples 1 and 2.

Example 4: On the semiconductor substrate 100 on which the light receiving section 101 and the scanning section 102 are covered in advance with a passivation film, H8G (trade name, manufactured by Hitachi Chemical Co., Ltd.) is used as an organic silicon material constituting a flattening layer.
was applied to a thickness of 0.8 μm and baked at 350° C. for 30 minutes to form a flattening layer 103. Thereafter, a color solid-state image sensor was obtained in the same manner as in Examples 1 and 2.

Example 5 A polyimide precursor represented by the following formula (rV) was applied as a base organic polymer material constituting a planarization layer on a semiconductor substrate 100 on which a light receiving section 101 and a scanning section 102 were covered with a passivation film in advance. Coated to a thickness of 2.2 μm, heated at 200°C for 30 minutes, then heated for 30 minutes.
Bake at 0℃ for 30 minutes. Next, TSIR-205 (trade name, manufactured by Toshi Dow Corning Silicone) was applied to a thickness of 0.2 μm as an organic silicon material constituting the upper layer of the planarization layer, and baked at 150° C. for 30 minutes to form a 2M film. A flattening layer 103 was used. Thereafter, a color solid-state image sensor was obtained in the same manner as in Examples 1 and 2.

Example 6゜A Tokyo Ohka layer (trade name: 0EB) is placed on the semiconductor substrate 100, on which the light receiving section 101 and the scanning section 102 are covered with a passivation film in advance, as the base organic polymer material constituting the planarization layer.
Apply R-100 to a thickness of 1 μm and beta at 200'C for 130 minutes. Next, as the organic silicon material constituting the upper layer of the flattening layer, Toshi Dow Corning Silicone (trade name: T) was used.
SIR-205 was applied to a thickness of 0.2 μm and heated at 150°C for 3
A planarization layer 103 consisting of a two-layer film was obtained by baking for 0 minutes.

Thereafter, a color solid-state image sensor was obtained in the same manner as in Examples 1 and 2.

Example 7゜In place of TSIR-205 used as the organosilicon material 106 in Examples 1 and 2, OC (trade name of Tokyo Ohka Layer) was used.
D was applied to a thickness of 1 μm and baked at 200° C. for 30 minutes to obtain a color solid-state image sensor in the same manner as in Examples 1 and 2.

Example 8 Instead of TSIR-205 used as the organic silicon material 106 in Examples 1 and 2, H8G (trade name, manufactured by Hitachi Chemical Co., Ltd.) was applied to a thickness of 0.8 μm, and heated at 200° C. for 30 minutes.
After baking for 0 minutes, a color solid-state image sensor was obtained in the same manner as in Examples 1 and 2.

Example 9゜TSI used as organosilicon material 106 in Example 5
Instead of R-205, a color solid-state imaging device was obtained in the same manner as in Example 5 by applying OCD, a trade name of Tokyo Ohka Kaiyo Co., Ltd., to a thickness of 1 μm and baking at 200° C. for 30 minutes.

Example 10゜TSI used as organosilicon material 106 in Example 5
Instead of R-205, use the product name H8G manufactured by Hitachi Chemical Co., Ltd.
A color solid-state image sensing device was obtained in the same manner as in Example 5 by applying the coating to a thickness of 0.8 μm using the following method and baking at 200° C. for 30 minutes.

Examples 11 to 18 below illustrate a color solid-state image sensor in which microlenses are formed on a color filter and a method for manufacturing the same.

Embodiment 11 FIG. 2 shows a process diagram for forming microlenses on a color filter through a transparent protective film, and will be described below with reference to the drawings.

As shown in FIG. 2(a), on the elements obtained in Examples 1 and 2, the formula (1) and formula (■) (herein, methyl cholate-tris (α - diazoacetoacetate) was applied to a thickness of 2.5 μm, baked at 90°C for 30 minutes, and formed into organic silicon thread Deep.
A UV resist 112 was formed. Next, Fig. 2(b)
As shown in FIG. 2, exposure was carried out through a predetermined mask to form a resist remaining pattern 112' at a position corresponding to the light receiving part 101 (not shown), and 0.045N (HOCH2
CH, ), developed with NOH aqueous solution and rinsed to form a resist pattern 112' as a microlens constituent material.
was formed. Subsequently, the resist pattern 112' was baked at 160° C. for 10 minutes to form convex microlenses 112r as shown in FIG. 2(c).

Example 12 As shown in FIG. 2(a), the compositions of the formulas (I) and (m) (Hitachi Chemical Co., Ltd.) were applied as microlens constituent materials on the elements obtained in Examples 1 and 2. Product name: RU-1
600P) was applied to a thickness of 2.5 pm, and the organic silicon-based UV resist 112 was formed by beta-coating at 90° C. for 30 minutes. 1. As shown in FIG. 2(b), the light receiving section 10
exposed through a predetermined mask so as to form a resist remaining pattern 112' at a position corresponding to 1 (not shown);
It was developed and rinsed with a 0.66 wt% M e 4N OH aqueous solution to form a resist pattern 112' as a microlens constituent material. Thereafter, the entire surface of this resist pattern 112' was exposed to light for bleaching. In other words, this entire surface exposure is performed in order to remove unnecessary absorption (wavelength of 400 nm or more) by the lens.

Subsequently, the above resist pattern 112' was heated to 160°C.
By baking for 10 minutes, a convex microlens 112M as shown in FIG. 2(c) was formed.

Example 13゜ On the device obtained in Example 5, in the same manner as in Example 11,
A microlens 112r was formed.

Example 14゜ On the device obtained in Example 5, in the same manner as in Example 12,
A microlens 1121 was formed.

Example 15 As shown in FIG. 2(a), RU-200ON (trade name, manufactured by Hitachi Chemical Co., Ltd.) was applied to a thickness of 2.5 μm as a microlens constituent material on the elements obtained in Examples 1 and 2. death,
It was baked at 90° C. for 30 minutes to form an organic deep UV resist 112.

Next, as shown in FIG. 2(b), a remaining pattern 11 of this resist is formed at a position corresponding to the light receiving part 101 (not shown).
The resist pattern 112' was exposed to light through a predetermined mask to form a microlens, developed with a special developer, and rinsed to form a resist pattern 112' that would become a microlens. Subsequently, the resist pattern 112' was baked at 160° C. for 10 minutes to form convex microlenses 1121 as shown in FIG. 2(c).

Example 16 As shown in FIG. 2(a), on the elements obtained in Examples 1 and 2, SMA resin (trade name, manufactured by Kawasaki Kaisha, Ltd.) and 0-naphthoquinone diazide were added as microlens constituent materials. The composition was applied to a thickness of 2.5 μm and baked at 90° C. for 30 minutes to form an organic UV resist 112. Then 1. As shown in FIG. 2(b), exposure was carried out through a predetermined mask to form a resist remaining pattern 112' at a position corresponding to the light-receiving part 101 (not shown).
It was developed and rinsed with a t% M e 4N OH aqueous solution to form a resist pattern 112' that would become a microlens. Thereafter, the entire surface of this resist pattern 112' was exposed to light for bleaching. Subsequently, the resist pattern 112'' was baked at 160° C. for 10 minutes.
A convex microlens 112 as shown in FIG. 2(C)
I was formed.

Example 17゜ On the element obtained in Example 5, in the same manner as in Example 15,
A microlens 112r was formed.

Example 18゜On the device obtained in Example 5, in the same manner as in Example 16,
A microlens 112M was formed.

Examples 19 to 22 below describe a solid-state image sensor substrate 100 on which bonding pads serving as external extraction electrodes are formed.
This relates to the opening of the bonding pad when a color filter is formed thereon or a microlens is further formed thereon, and will be explained using the process diagram shown in FIG. 4.

Example 19 As shown in FIG. 4(a), 0FPR-800 manufactured by Tokyo Ohka Co., Ltd. was applied to a thickness of 3 μm on the device obtained in Example 11, and baked at 90° C. for 30 minutes. , an organic resist film 114 was formed. After that, the bonding pad 113
A punched pattern 11 of this organic resist film 114 is formed on the top of the organic resist film 114.
4' was exposed through a predetermined mask (not shown), developed with a 2.38 wt% M e 4N 0H aqueous solution, and rinsed to form a resist pattern 114'.

Subsequently, as shown in FIG. 4(b), using this resist pattern 114' as a mask, the organic silicon material 106 on the bonding pad 113 is removed using CF4 gas plasma.
and 103 were selectively etched.

Next, as shown in FIG. 4(Q), the resist pattern 114' was etched away using O2 gas plasma to expose and open the bonding pad portion 113.

Example 20 As shown in FIG. 4(a), on the device obtained in Example 13, 0FPR-800 manufactured by Tokyo Ohka Co., Ltd. was applied to a thickness of 2 μm and baked at 90° C. for 30 minutes. , an organic resist film 114 was formed. Thereafter, as shown in FIG. 4(b), a punched pattern 1 is formed on the bonding pad portion 113.
14' through a predetermined mask;
．． A resist pattern 114' was formed by developing and rinsing with a 38wt% M e 4N OH aqueous solution. Subsequently, the organosilicon protective film 106 on the bonding pad 113 and the organosilicon material layer on the top surface of the planarization layer 103 were successively etched away using CF4 gas plasma.

Next, as shown in FIG. 4(c), the resist pattern 114' and the lower organic material layer portion of the planarization layer 103 are simultaneously etched away using O2 gas plasma containing 10% CF4, and the bonding pads are etched away. The portion 113 was exposed and opened.

Example 21 As shown in FIG. 4(a), on the device obtained in Example 15, 0FPR-800 manufactured by Tokyo Ohka Co., Ltd. was applied to a thickness of 3 μm, and baked at 90° C. for 30 minutes. .

An organic resist film 114 was formed.

Thereafter, as shown in FIG. 4(b), exposure was performed through a predetermined mask to form a punching pattern 114' on the bonding pad portion 113, and 2.38wt%M
e 4N OH aqueous solution was developed and rinsed to form a resist pattern 114'.

Subsequently, as shown in FIG. 4(c), the organic silicon material 106 on the bonding pad is heated using CF4 gas plasma.
103 is continuously etched, and finally, the organic resist pattern 114' is peeled off to form the bonding pad portion 1.
13 was exposed and opened.

Example 22 As shown in FIG. 4(a), on the device obtained in Example 17, 0FPR-800 manufactured by Tokyo Ohka Co., Ltd. was coated to a thickness of 2 μm and incubated at +90° C. for 30 minutes. , an organic resist film 114 was formed.

Thereafter, as shown in FIG. 4(b), exposure was performed through a predetermined mask to form a punching pattern 114' on the bonding pad portion 113, and 2.38 wt% M e
A resist pattern 114' was formed by developing with a 4N OH aqueous solution and rinsing.

Subsequently, as shown in FIG. 4(c), the organosilicon protective film 106 on the bonding pad 113 and the organosilicon material portion on the top surface of the planarization layer 103 were successively etched away using CF4 gas plasma. Next, a part of the resist pattern 114' and the lower organic material part of the planarization layer 103 are etched away using plasma of 02 gas containing 10% CF, and finally, the organic resist pattern remaining from the previous etching process is removed. 114' was peeled off to expose and open the bonding pad portion 113.

〔Effect of the invention〕

As described above, according to the present invention, it has become possible to manufacture a color solid-state image sensor with high sensitivity and high resolution without variations in spectral sensitivity or color bleeding through simple steps. The effect is particularly remarkable in a color solid-state image pickup device in which filters each surrounded by a black matrix made of an organic silicon material layer containing a light absorbing agent are disposed.

The color solid-state image sensor equipped with a filter made of this improved black matrix does not require any particular increase in the number of steps, and can be used as an organic mask material for selectively dyeing the filter. This can be easily achieved simply by incorporating a light absorbing agent into the silicon material layer.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a solid-state image sensor equipped with a black matrix type color filter according to an embodiment of the present invention and its manufacturing process, and FIG. 2 is a color solid-state image sensor according to the present invention further equipped with a microlens. FIG. 3 is a cross-sectional view of the peripheral part of a microlens showing the image sensor and its manufacturing process, FIG. 3 is a plan view showing the filter surface of FIG. 1, and FIG. FIG. 5 is a cross-sectional view showing an example of the processing steps, and FIG. 5 is a device cross-sectional view showing the manufacturing process of a filter in a color solid-state image sensor according to another embodiment of the present invention. Explanation of symbols 100...Solid-state image sensor substrate, 101...Light receiving section, 102...Scanning section. 103... Flattening layer, 104'... Dyeable material pattern, 105'... Organosilicon based resist pattern, 106... Organosilicon material layer, 106a... Organosilicon material containing light absorber layer, 106
a'...Filter partition wall (black matrix), 10
7゛...Organic resist pattern. 108.109.110.111...Color filter, 112...Microlens material layer, 112゛...Microlens material layer pattern, 112
I... Micro lens, 113... Bonding pad,

Claims (1)

[Claims] 1. At least a semiconductor substrate on which a light-receiving section that performs photoelectric conversion, a scanning section that extracts electrical signals generated in the light-receiving section, and a passivation film that protects the light-receiving section and the scanning section are formed. A transparent flattening layer whose upper surface is made of an organic silicon material is disposed, a partition layer made of an organic silicon material layer containing a light absorber is provided on a region of the flattening layer located above the scanning section, and A color filter layer is disposed in a region located on the flattening layer, and the color filters each having a peripheral edge surrounded by a partition layer made of an organic silicon material layer containing a light absorbing agent are placed on the same plane on the flattening layer. A color solid-state image sensor equipped inside. 2. The color solid-state image sensor according to claim 1, wherein a protective film made of a transparent material is disposed on a layer having a partition layer made of an organic silicon material layer containing the light absorbing agent and a color filter layer. . 3. The color solid-state imaging device according to claim 2, wherein convex microlenses are disposed on each of the color filter layers via a protective film made of a transparent material. 4. The color solid-state image sensor 5 according to claim 1, wherein the transparent flattening layer comprises an organic silicon material layer, wherein the transparent flattening layer comprises an organic silicon material layer laminated on a base comprising an organic polymer material layer. 2. The color solid-state image sensing device according to claim 1, comprising a composite layer. 6. The color solid-state imaging device according to claim 2, wherein the protective film made of the transparent material is made of an organic silicon material layer. 7. The color solid-state imaging device according to claim 3, wherein the convex microlens is made of an organic silicon material or an organic polymer material. 8. Claim 1, wherein the organic silicon material layer has at least one selected from partially hydrolyzed alkoxysilane oligomers, thermally crosslinkable polyorganosilsesquioxanes, and polyorganosilsesquioxanes as a main component. ,4,
5. The color solid-state image sensor according to items 5 and 6. 9. The color solid-state imaging device according to claim 5, wherein the organic polymer material layer is a transparent polyimide layer formed by curing a polyimide precursor whose molecular terminals are end-capped. 10. The color solid-state imaging device according to claim 7, wherein the organic silicon material layer constituting the microlens is a resist material layer having an alkali-soluble organic silicon resin as a matrix resin. 11. The above alkali-soluble organosilicon resin is an alkali-soluble polyorganosilsesquioxane represented by the following structural formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) [However, n is A positive integer, m is a positive integer including zero,
Claim 10: n/(n+m) is 0.4 to 1.0]
The color solid-state imaging device described. 12. The color solid-state imaging device according to claim 7, wherein the organic polymer material layer constituting the microlens is a resist material layer having an alkali-soluble organic polymer material as a matrix resin. 13. A claim in which the alkali-soluble organic polymer material is at least one selected from a polymer containing hydroxystyrene, a polymer containing acrylic acid, a polymer containing methacrylic acid, and a polymer containing an alcoholic decomposition product of maleic anhydride. 13. The color solid-state image sensor according to item 12. 14. At least the upper surface of the semiconductor substrate is made of organic silicon on a semiconductor substrate on which a light receiving section that performs photoelectric conversion, a scanning section that extracts the electric signal generated in the light receiving section, and a passivation film that protects the light receiving section and the scanning section are formed in advance. a step of forming a transparent flattening layer made of material; a step of forming a dyeable material layer on the flattening layer; and a step of forming an organosilicon resist on the dyeable material layer. a step of forming a residual pattern of resist at a position corresponding to the light-receiving area by exposure and development; and selectively etching the dyeable material with gas plasma containing oxygen using the organosilicon resist pattern as a mask; a step of forming a residual pattern of a dyeable material layer at a position corresponding to the light receiving area, a step of peeling off the pattern of the organosilicon resist, and a step of forming an organosilicon material layer on the pattern of the dyeable material layer. A film forming process, forming an organic resist film on the organic silicon material layer, and exposing and
a step of forming a resist cutout pattern at a predetermined dyeable material layer pattern by development; and a step of etching the organic silicon material layer using the resist pattern as a mask to selectively remove the predetermined dyeable material layer pattern. a step of peeling off the resist pattern; a step of dyeing the predetermined dyeable material layer pattern whose surface is exposed with a predetermined first color; and a step of dyeing the dyeable material layer pattern with a predetermined first color. A series of steps from forming an organic silicon material layer on top to dyeing a predetermined dyeable material layer pattern with the first color are repeated multiple times depending on the number of colors constituting the color filter. 1. A method of manufacturing a color solid-state image sensor, comprising the steps of: forming color filters of a predetermined number of colors in the same plane. 15. At least the upper surface of the semiconductor substrate is formed of organic silicon on a semiconductor substrate on which a light receiving section that performs photoelectric conversion, a scanning section that extracts the electric signal generated in the light receiving section, and a passivation film that protects the light receiving section and the scanning section are formed in advance. a step of forming a transparent flattening layer made of material; a step of forming a dyeable material layer on the flattening layer; and a step of forming an organosilicon resist on the dyeable material layer. a step of forming a residual pattern of resist at a position corresponding to the light-receiving area by exposure and development; and selectively etching the dyeable material with gas plasma containing oxygen using the organosilicon resist pattern as a mask; A step of forming a remaining pattern of the dyeable material layer at a position corresponding to the light receiving area, a step of peeling off the pattern of the organosilicon resist, and a step of applying a light absorbing agent to the entire surface of the substrate including the top of the dyeable material layer pattern. a process of forming an organic silicon material layer containing the organic silicon material layer, and a process of forming an organic resist on the organic silicon material layer, and forming a cutout pattern of the resist at a predetermined dyeable material layer pattern position by exposure and development. a step of selectively exposing a predetermined surface of the dyeable material layer pattern by etching the organic silicon material layer containing the light absorbing agent using the resist pattern as a mask;
a step of peeling off the resist pattern, a step of dyeing the predetermined dyeable material layer pattern whose surface is exposed with a predetermined first color, and a step of applying a light absorbing agent on the dyeable material layer pattern. Repeating a series of steps from the step of forming an organic silicon material layer including the step to the step of dyeing a predetermined dyeable material layer pattern with a first color a plurality of times in accordance with the number of colors constituting the color filter, 2. The method of manufacturing a color solid-state image sensor according to claim 1, further comprising the step of forming color filters of a predetermined number of colors in the same plane. 16. The color solid-state imaging device according to claim 2, further comprising the step of forming an organic silicon material layer as a transparent protective film following the final manufacturing step in the method for manufacturing a color solid-state imaging device according to claim 14 or 15. Method of manufacturing elements. 17. Following the final manufacturing step in the method for manufacturing a color solid-state image sensor according to claim 16, a step of forming a deep UV resist, exposing and developing it to form a residual pattern of the resist at a position corresponding to the light-receiving area; 4. The method of manufacturing a color solid-state image sensor according to claim 3, further comprising the step of heating the remaining resist pattern to form convex microlenses. 18. Subsequent to the final manufacturing step in the method for manufacturing a color solid-state image sensor according to claim 16, forming a UV resist film, exposing and developing it to form a residual pattern of the resist at a position corresponding to the light-receiving area; 4. The method of manufacturing a color solid-state image sensor according to claim 3, further comprising the step of exposing the remaining resist pattern to light over the entire surface and then heating it to form convex microlenses. 19. From the flattening layer and transparent protective layer that are sequentially laminated on the bonding pad portion previously formed on the solid-state image sensor substrate in the transparent flattening layer forming step and the transparent protective film forming step after the color filter forming step. forming a film of an organic resist on the laminated film, and forming a predetermined organic resist pattern by exposing through a predetermined mask pattern to expose the bonding pad portion from the laminated film and developing it. 16. The method of manufacturing a color solid-state image sensor according to claim 14, further comprising dry etching the laminated film using the organic resist pattern as a mask to expose and open a bonding pad portion. 20. In the step of dry etching the laminated film including the transparent flattening layer and the transparent protective layer on the bonding pad portion to expose the bonding pad portion provided on the solid-state image sensor substrate, A bonding pad section that includes a process of dry etching using a gas plasma containing fluorine when the film is formed of an organic silicon-based material, or using a gas plasma containing oxygen when the film is formed of an organic polymer material. 20. The method of manufacturing a color solid-state image sensor according to claim 19, comprising a processing step. 21. An organic resist is formed on the transparent flattening layer laminated on the bonding pad portion disposed on the solid-state image sensor substrate, exposed through a prescribed mask, and developed to form a prescribed organic resist. a step of forming a resist pattern; a step of dry etching the transparent planarization layer using the organic resist pattern as a mask to open it and expose a bonding pad portion; and a step of leaving the organic resist as a surface protective layer of the color filter. 20. The method of manufacturing a color solid-state image sensor according to claim 19, further comprising a bonding pad portion processing step.