JPH05299625A - Solid-state image sensing element and manufacture thereof - Google Patents

Abstract

PURPOSE:To remove a stepped section in an element surface by forming an antireflection film only in the recessed section of a substrate. CONSTITUTION:Since the greater part of projection sections formed in a peripheral section region are formed as a wiring 5 composed of Al, etc., and a bonding pad 3, antireflection films 7 may be shaped onto these wiring and bonding pad for removing the stepped section in a surface. The surface of a solid-state image sensing element is spin-coated with a casein photosensitizing solution, and the photosensitizing solution is cured, thus forming a casein photosensitive film 19. The casein photosensitive film 19 is applied in thickness thinner than the film thickness of the Al wiring 5 by approximately ten percentage in consideration of expansion. The casein photosensitive film 19 is patterned. An approximately 5-10mum space is left previously between the end of the pattern of the Al wiring 5 and the end of the pattern of the casein photosensitive film 19. Lastly, the casein photosensitive film 19 is immersed in a dyeing liquid, and dyed. Accordingly, the casein photosensitive film 19 is dyed while being expanded and changed into the antireflection film 7, thus flattening the surface of the element.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor and a method for manufacturing the same, and more particularly to a solid-state image sensor having an antireflection film formed on the surface of a semiconductor substrate on which a photoelectric conversion element is mounted and a method for manufacturing the same. is there.

[0002]

2. Description of the Related Art FIG. 4 is a schematic view showing the structure of a conventional solid-state image pickup device having an antireflection film formed on the surface thereof, and FIG. 4 (a) is a plan view of the device as seen from above. 4 (b)
FIG. 4 is a lateral cross-sectional view of a light receiving region. Further, FIG. 4C is a lateral cross-sectional view of a region other than the light receiving region, that is, a peripheral region of the substrate, and shows a cross section AB of FIG. 4A. In FIG. 4A, the internal structures of the antireflection film 7, the protective film 8 and the light receiving region 6 are omitted.
In FIG. 4, reference numeral 1 denotes a semiconductor substrate on which a photoelectric conversion element is mounted, and a light receiving region 6 in which the photoelectric conversion unit 10 and the transfer unit 12 are formed, and a region in which the light receiving region 6 is not formed (hereinafter referred to as a peripheral region). (Referred to as a partial region 20). Reference numeral 2 denotes a peripheral circuit portion that is formed in a mixed manner in the peripheral region 20, and includes, for example, a circuit necessary for the operation of the solid-state imaging device such as a signal amplifier circuit, a test pattern required in a wafer manufacturing process, and the like. It is composed of various patterns.
3 is a bonding pad, 5 is an Al wiring for connecting the bonding pad 3 and the peripheral circuit section 2 to the inside of the chip, and 4 is a three-dimensional wiring section formed by a plurality of Al wirings 5 crossing each other.

A protective film 8 is formed so as to cover the surface of the solid-state image pickup device so as to protect the solid-state image pickup device. For example, an unnecessary portion such as the bonding pad 3 is opened. Reference numeral 7 is an antireflection film formed on the protective film 8, and unnecessary portions are opened. Reference numeral 9 denotes a thick insulating film formed on the semiconductor substrate 1 in the peripheral region 20,
Reference numeral 14 is a thin insulating film formed on the semiconductor substrate 1 in the light receiving region 6, 10 is a photoelectric conversion unit for converting light incident on the light receiving region 6 into an electric signal, and 11 is a separation unit for separating each pixel region. , 12 are transfer units, through which the photoelectric conversion signals converted into electric signals by the photoelectric conversion unit 10 are transferred. Reference numeral 15 is a polysilicon gate formed to face the transfer portion 12 with a thin insulating film 14 interposed therebetween. Reference numeral 13 is a light-shielding film formed of a metal such as Al or its alloy so as to cover the polysilicon gate 15.

As shown in the above figure, in the light receiving region 6, the photoelectric conversion portion 10, the separation portion 11 and the transfer portion 1 are provided in the semiconductor substrate 1.
2, a polysilicon gate 15 and a light shielding film 13 are formed on the substrate 1 with a thin insulating film 14 interposed therebetween. In the peripheral region 20, the Al wiring 5 and the bonding pad 3 are formed on the semiconductor substrate 1 with the thick insulating film 9 interposed therebetween.
Has been formed. Furthermore, a protective film 8 is formed on these surfaces.
Are formed by opening holes at required portions as necessary, and an antireflection film 7 is formed on the protective film 8 by opening unnecessary portions.

Next, the operation will be described. The light incident on the element is converted into an electric signal by the photoelectric conversion unit 10 in the light receiving region 6 and read out through the transfer unit 12. Peripheral area 2
At 0, there is the bonding pad 3 and the Al wiring 5 that connects the bonding pad 3 and the inside of the chip. Therefore, the drive signal and the output signal of the polysilicon gate 15 on the transfer unit 12 are bonded to these bonding pads 3. It is designed to communicate with the outside through the wire.

Here, the light-shielding film 13 formed on the polysilicon gate 15 is necessary for suppressing a false signal called smear which occurs when light enters the transfer section 12. A metal such as Al or an alloy thereof is usually used for the light shielding film 13, and a high light shielding effect is obtained. On the other hand, however, since the light-shielding film 13 is made of metal, light is reflected on the surface of the light-shielding film 13, and various problems caused by this are caused, for example, by directly mounting a color filter on the solid-state image sensor by photolithography. When forming, the pattern of the layer to be dyed that is the source of the color filter becomes rough due to the reflection of light, or the error with the design dimension of the photomask expands, or after attaching the element to the camera, When a high-brightness subject is imaged by the camera, problems such as halation that causes blurring of the captured image occur. To prevent and solve these problems,
An antireflection film 7 is provided on the element surface to prevent light reflection on the surface of the light shielding film 13.

Next, a method of forming the antireflection film 7 will be described. Although various materials and forming methods for the antireflection film 7 can be considered, generally, those obtained by a manufacturing method such as photolithography similar to the direct-attaching type color filter are often used. Specifically, for example, a dyeable photosensitive aqueous solution such as gelatin and casein to which dichromic acid is added is applied onto the surface of the solid-state image pickup device (on the semiconductor substrate 1 on which the protective film 8 is formed). After forming a material layer to be dyed and patterning the material layer to be dyed by a photoengraving method to form a predetermined pattern, the substrate on which the pattern is formed is immersed in a dyeing solution adjusted to a predetermined condition. The pattern is dyed in black or the like and used as the antireflection film 7. The thickness of the antireflection film 7 is 1 μm.
Around m is commonly used.

[0008]

Since the conventional solid-state image pickup device and its manufacturing method are configured as described above,
As shown in Figs. 4 (b) and 4 (c), there is a step on the substrate surface,
After forming the antireflection film 7, when forming a color filter layer formed on the element surface, or a microlens layer formed on the upper surface thereof, etc., a material used in the forming step may be spin-coated on the substrate surface. , The unevenness of streak-like coating caused by the step on the surface of the substrate, especially the convex portion causes the FPN on the camera to which the solid-state imaging device is attached.
Since (fixed pattern noise) is generated, there is a problem that quality performance is deteriorated.

FIG. 5 is a diagram for explaining the problems in the conventional solid-state image pickup device and the manufacturing method thereof, in which 17 is a semiconductor wafer and 16 is the semiconductor wafer 17.
It is a chip formed on the top. As shown in FIG. 5, streak-shaped coating unevenness caused by a step on the substrate surface causes light-receiving region 6 to appear.
Alternatively, if it exists in the peripheral area 20, it causes FPN (fixed pattern noise) due to uneven sensitivity at the time of imaging, which is a serious problem. Here, a method for solving the problem of uneven coating in the light receiving region 6 has already been disclosed in Japanese Patent Application No. 3-27.
No. 2577, and in this case, before the step of dyeing the material layer to be dyed in the above-mentioned conventional example, it is transparent to visible light and is not dyed with a dye, and the flatness of the base is good. A dye-resisting material layer is formed by applying a material on the material-to-be-dyed layer and curing it, and subsequently, the dye-resisting material layer is patterned so that the dye-resisting material layer remains only in the recesses on the surface of the substrate. By immersing the dye in a dyeing solution, the dye-proof material layer is removed, and only the exposed portion of the material layer to be dyed is dyed, whereby the antireflection film 7 is obtained. As described above, in the light receiving region 6, the antireflection film 7 is formed by embedding the transparent resin layer (resisting material layer) in the recess.
And the flatness of the substrate surface is realized.

However, even if the substrate surface is flattened only in the light receiving region 6, the coating unevenness due to the step in the peripheral region 20 cannot be prevented, and the sensitivity unevenness at the time of image pickup also occurs. FIG. 6 is a diagram for explaining problems in the conventional solid-state image pickup device and the manufacturing method thereof. In the figure, the same reference numerals as those in FIG.
A transparent resin film 8 is given as an example of a layer formed on the antireflection film 7 in a later step. In the peripheral region 20, the antireflection film 7 is usually not formed on the bonding pad 3. Therefore, as shown in FIG. 6, after forming the antireflection film 7, a transparent resin film 18 is formed on the surface of the element. However, in the area of the bonding pad 3, uneven coating caused by the bonding pad 3 can be suppressed. However, since the antireflection film 7 is formed on the convex portion caused by the other Al wiring 5 and the like, and the antireflection film 7 reflects the shape of the convex portion of the base, after all, the transparent resin is formed after that. Membrane 18
There was a problem that coating unevenness could not be prevented when forming the film.

The present invention has been made to solve the above-mentioned problems. By improving the method of forming an antireflection film, the step difference on the element surface can be reduced, and the element surface can be formed in the subsequent steps. When spin-coating the material of the layer to be formed on top, it is intended to obtain a solid-state imaging device capable of preventing coating unevenness and preventing the yield decrease due to the coating unevenness. It is an object of the present invention to provide a manufacturing method suitable for this solid-state imaging device.

[0012]

A solid-state image pickup device according to the present invention comprises a charge transfer device having a metallic light-shielding layer formed thereon and a photoelectric conversion device, and a protective film and a photoelectric conversion device formed on a predetermined region of the surface thereof. A solid-state imaging device having a protective film formed in a predetermined region on a semiconductor substrate, which includes a light receiving region having a first antireflection film formed thereon and a peripheral region having a peripheral circuit and a bonding pad. The second antireflection film is formed on the protective film in the peripheral region and has a second antireflection film made of an organic compound that is dyed black, and has an opening portion in a convex portion caused by the peripheral circuit and the bonding pad.

Also, in the method for manufacturing a solid-state image pickup device according to the present invention, a photosensitive organic compound solution is applied to the surface of the device in the peripheral region consisting of the peripheral circuit and the bonding pad to form a photosensitive organic compound film. Then, after patterning the photosensitive organic compound film using a mask having a pattern such that the peripheral circuit and the area of the bonding pad are opened, the patterned photosensitive organic compound film is dipped in a dyeing solution for dyeing. To do.

Further, in the method for manufacturing a solid-state image pickup device according to the present invention, an organic compound solution is applied onto the device surface in the peripheral region to form an organic compound film, and the peripheral circuit and the region of the bonding pad are opened. The organic compound film is patterned by photolithography and etching using a mask having such a pattern, and then the patterned organic compound film is immersed in a dyeing solution for dyeing.

[0015]

Since the solid-state image pickup device according to the present invention has the structure in which the antireflection film is formed only in the concave portion on the substrate, there is almost no step on the device surface, and therefore, the layer formed in the subsequent step has uneven coating. It can be formed without causing the occurrence of deterioration of sensitivity and a decrease in yield due to the uneven coating.

In the method of manufacturing a solid-state image pickup device according to the present invention, the antireflection film 7 is not formed in a region which becomes a convex portion such as an Al wiring and a bonding pad, that is, the antireflection film 7 is formed only in the concave portion. Since it is formed, the substrate can be planarized at the same time when the antireflection film is formed,
Further, the flattening can be performed without using complicated steps and shortening the steps, and prevent uneven coating when the material of the layer formed in a later step is applied to the surface of the substrate. FP caused by uneven coating
It is possible to inexpensively obtain a high-performance solid-state imaging device in which N is greatly reduced.

[0017]

EXAMPLES Example 1. Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of a solid-state image sensor according to the first embodiment of the present invention.
The same reference numerals as those in FIG. 4 indicate the same or corresponding portions. 1 (a) is a plan view of the device viewed from above, and FIG. 1 (b) is a plan view of FIG.
(a) is a schematic lateral cross-sectional view of the peripheral region 20 showing an AB cross section, and FIG. 1 (c) is an enlarged plan view showing an enlarged region surrounded by c in FIG. 1 (a). is there. Further, in FIG. 1A, the internal structures of the antireflection film 7, the protective film 8 and the light receiving region 6 are omitted.

Most of the protrusions formed in the peripheral region 20 are the wiring 5 and the bonding pad 3 made of Al or the like.
The antireflection film 7 may not be formed on these. In this embodiment, as shown in FIG. 1 (c), the antireflection film 7 is not formed in a region that becomes a convex portion such as the Al wiring 5 and the bonding pad 3, that is, the antireflection film 7 is formed only in the concave portion. 7 are formed to prevent the surface step difference as shown in FIG. 1 (b).

FIG. 3 is a sectional view for explaining the structure of the solid-state image pickup device according to the first embodiment of the present invention.
The same reference numerals as those in FIG. 6 indicate the same or corresponding parts. Figure 1 above
When the transparent resin film 18 is formed by spin coating on the element having the structure shown in FIG. 3, it can be formed with almost no surface step difference as compared with the element structure shown in FIG. 6, as shown in FIG. Therefore, for example, even when applying the material of the layer to be formed in a subsequent step to form a color filter or a microlens, it is possible to prevent uneven application, so that it is possible to maintain good sensitivity during imaging. it can.

Next, a method of manufacturing the solid-state image sensor according to this embodiment will be described. Incidentally, here, the antireflection film 7
A case where photosensitive casein is used as the material will be described as an example. FIG. 2 is a sectional view showing a process flow of a method of manufacturing a solid-state image sensor according to the first embodiment of the present invention.
In the figure, the same reference numerals as those in FIG. 1 or 4 indicate the same or corresponding parts. In FIG. 2, reference numeral 19 denotes a casein photosensitive film which is a material layer to be dyed, which is patterned, dyed with a dyeing solution, and expanded to form the antireflection film 7.

First, a casein photosensitive solution is spin-coated on the surface of the solid-state image pickup device and then cured to form a casein photosensitive film 19 as shown in FIG. 2 (a). At this time, a method of directly applying a casein photosensitive liquid to the device surface as described above is generally used. However, in order to improve the adhesion of casein to the substrate, an organic transparent resin is applied to the device surface before applying casein. There is also a method in which a casein photosensitive solution is applied after it is applied in a thickness of about 0.5 μm in advance.

The casein photosensitizing solution used here is a casein aqueous solution containing 10 to 15% by weight of dichromate added to the casein in an amount of about 10 to 15% by weight so as to have photosensitivity. Is. Further, the casein photosensitive film 19 is immersed in the dyeing solution in the subsequent step, but it expands during the dyeing step as a characteristic of casein, and in particular, it expands about 10% in the vertical direction. At the time of application, it is desirable that the film thickness is about 10% thinner than the film thickness of the Al wiring 5 in consideration of the expansion. For example, if the film thickness of the Al wiring 5 is 7,000 Å, it is ideal that the casein photosensitive solution is applied so that the film thickness of the casein photosensitive film 19 becomes 6000 to 6500 Å.
However, in practice, the convex portions are more likely to cause uneven coating than the concave portions, and therefore it is often preferable to apply the coating slightly thicker.

Next, the casein photosensitive film 19 is patterned by using a photolithography technique. The patterning at this time is performed in consideration of the expansion at the time of dyeing in order to prevent the casein photosensitive film 19, that is, the antireflection film 7 from being raised at the end portion on the convex portion due to the expansion at the subsequent dyeing step. However, since the expansion in the horizontal direction is slower than that in the vertical direction, the distance between the edge of the pattern of the Al wiring 5 and the edge of the pattern of the casein photosensitive film 19 is 5 to 10 μm.
It is enough to leave it open about m.

Finally, the casein photosensitive film 19 is dipped in a dyeing solution for dyeing. As the dye used at this time, a black dye is preferable from the viewpoint of antireflection effect. Also,
The dyeing conditions are not constant depending on the dye used,
Generally, dye concentration is 0.5-1g / l, pH is 3.0-
4.5, temperature 50 to 80 ° C., dyeing time 5 to 20 minutes. As a result, the casein photosensitive film 19 is dyed and swelled to become the antireflection film 7 as shown in FIG. 2 (c).

As described above, in the above-described embodiment, the antireflection film 7 is not formed on the convex portion of the element surface. Therefore, the element surface can be planarized simultaneously with the formation of the antireflection film 7. This makes it possible to obtain the device easily without using complicated steps and by shortening the steps. Further, the layer formed in the subsequent step can also be formed without causing coating unevenness, and it is possible to prevent a decrease in sensitivity due to the coating unevenness.

Example 2. In the first embodiment, the antireflection film 7 was formed using photosensitive casein in order to simplify the step of patterning the material layer to be dyed. However, in the fine processing of the antireflection film 7, However, photosensitivity is not always necessary. For example, in the case of using non-photosensitive casein, after forming the casein film on the element surface, a general photoresist is applied on the upper surface, and this is used as a method of photoengraving. Then, the casein film is patterned by a method such as etching using the resist as a mask, and the dyeing process is finally performed, so that the same as the first embodiment is obtained.

Example 3. Furthermore, in the above-mentioned first and second embodiments, when an organic transparent resin is used to improve the adhesion of the casein film to the substrate 1, a dye of black or other required color is dispersed in this resin. There is also a method to use. First, an organic transparent resin film having a dye dispersed therein is formed on the surface of the device, and then a casein film is formed on the resin film. Then, if the resin film and the casein film are patterned, the same effects as those of the first and second embodiments can be obtained. Also in this example, it is irrelevant whether the organic transparent resin and the casein film have photosensitivity. Needless to say, the step of dyeing is omitted in the manufacturing method of this embodiment.

In the first to third embodiments,
Although the case where casein is used as the material of the antireflection film 7 is shown, it is a material that can be dyed with a dye such as gelatin or polyvinyl alcohol and can be made into a thin film.
Any material can be used as long as it can be cured by an appropriate method such as UV irradiation.

The dye used is not limited to black, and other colors such as red and yellow can be used depending on the purpose. This is mainly selected according to the usage of the solid-state image sensor.

[0030]

As described above, according to the solid-state image pickup device of the present invention, since the antireflection film is formed only in the concave portion on the substrate, there is almost no step on the device surface.
Therefore, a layer formed in a subsequent step can be formed without causing coating unevenness, and there is an effect that it is possible to prevent a decrease in sensitivity and a reduction in yield due to the coating unevenness.

Further, according to the method of manufacturing a solid-state image pickup device according to the present invention, the antireflection film 7 is not formed in a region which becomes a convex portion such as an Al wiring and a bonding pad, that is, only in the concave portion. Since the antireflection film 7 is formed, the substrate can be planarized at the same time when the antireflection film is formed. Further, the planarization can be performed without using complicated steps and with shortening the steps. In addition, since it is possible to prevent uneven coating when the material of the layer formed in the subsequent step is applied to the surface of the substrate, it is possible to obtain a high-performance solid-state imaging device in which FPN caused by uneven coating is significantly reduced. There is an effect that can be obtained.

[Brief description of drawings]

FIG. 1 is a top view, a sectional view, and a partially enlarged view showing the structure of a solid-state image sensor according to a first embodiment of the present invention.

FIG. 2 is a process flow cross-sectional view for explaining the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention.

FIG. 3 is a sectional view for explaining the structure of the solid-state image sensor according to the first embodiment of the present invention.

4A and 4B are a top view and a cross-sectional view showing a structure of a conventional solid-state imaging device.

FIG. 5 is a diagram for explaining a problem of a conventional solid-state imaging device.

FIG. 6 is a diagram for explaining a problem of a conventional solid-state image sensor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Peripheral circuit part 3 Bonding pad 4 Three-dimensional wiring part 5 Al wiring 6 Light receiving area 7 Antireflection film 8 Protective film 9 Thick insulating film 10 Photoelectric conversion part 11 Separation part 12 Transfer part 13 Light-shielding film 14 Thin insulating film 15 Poly Silicon gate 16 Chip 17 Semiconductor wafer 18 Transparent resin film 19 Casein photosensitive film 20 Peripheral area

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[Procedure amendment]

[Submission date] July 21, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Claim 2

[Correction method] Change

[Correction content]

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] Claim 3

[Correction method] Change

[Correction content]

[Procedure 3]

[Document name to be amended] Statement

[Name of item to be corrected] Claim 10

[Correction method] Change

[Correction content]

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction content]

Most of the protrusions formed in the peripheral region 20 are the wiring 5 and the bonding pad 3 made of Al or the like.
The antireflection film 7 may not be formed on these. In this embodiment, so as not to form the anti-reflection film 7 is in a region to be a convex portion such as Al wiring 5 and the bonding pads 3, as shown in FIG. 1 (c), i.e., preventing reflection only in the recess The film 7 is formed so that the surface step is prevented as shown in FIG. 1 (b).

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction content]

Example 2. In the first embodiment, the antireflection film 7 was formed using photosensitive casein in order to simplify the step of patterning the material layer to be dyed. However, in the fine processing of the antireflection film 7, However, photosensitivity is not always necessary. For example, in the case of using non-photosensitive casein, after forming the casein film on the element surface, a general photoresist is applied on the upper surface, and this is used as a method of photoengraving. Then, the casein film is patterned by a method such as etching using the resist as a mask , cured by an appropriate means, and finally dyed to obtain a product similar to that of the first embodiment. can get.

Claims (10)

[Claims] 1. A light-receiving region comprising a charge-transfer element and a photoelectric conversion element on which a metallic light-shielding layer is formed, and a protective film and a first antireflection film are formed on a predetermined region of the surface thereof. In a solid-state imaging device in which a protective film is formed in a predetermined region on a semiconductor substrate composed of a peripheral region including a peripheral circuit and a bonding pad, an opening is formed in a convex portion caused by the peripheral circuit and the bonding pad. And formed on the protective film in the peripheral region,
A solid-state image pickup device comprising a second antireflection film made of an organic compound dyed black. 2. A light-receiving region having a metallic light-shielding layer composed of a charge transfer element and a photoelectric conversion element formed thereon, and a protective film and a first antireflection film formed on a predetermined region of the surface thereof. And a peripheral region including a peripheral circuit and a bonding pad, a method for manufacturing a solid-state imaging device in which a protective film is formed in a predetermined region on a semiconductor substrate. The first step of applying the organic compound solution to form a photosensitive organic compound film, and the photosensitive organic compound film using a mask having a pattern in which the peripheral circuit and bonding pad regions are opened. And a third step of immersing the patterned photosensitive organic compound film in a dyeing solution for dyeing. 3. A light-receiving region comprising a charge transfer element and a photoelectric conversion element on which a metallic light-shielding layer is formed, and a protective film and a first antireflection film are formed on a predetermined region of the surface thereof. And a method for manufacturing a solid-state imaging device in which a protective film is formed in a predetermined region on a semiconductor substrate composed of a peripheral region including a peripheral circuit and a bonding pad. A first step of applying a solution to form an organic compound film; and a step of patterning the organic compound film by photolithography and etching using a mask having a pattern in which the peripheral circuit and bonding pad regions are opened. 2. A method for manufacturing a solid-state imaging device, comprising: the step 2; and a third step of immersing the patterned organic compound film in a dyeing solution for dyeing. 4. The solid-state imaging device according to claim 1, wherein a transparent resin film is inserted under the second antireflection film. 5. The method for manufacturing a solid-state imaging device according to claim 2, wherein before the first step, a transparent resin film is formed on the element surface of the peripheral region, and the second step is performed. Among them, the method for manufacturing a solid-state imaging device, characterized in that the transparent resin film is patterned together with the organic compound film. 6. The solid-state image pickup device according to claim 4, wherein the second antireflection film is not dyed, and a dye is dispersed in the transparent resin film. 7. A light-receiving region comprising a charge transfer element and a photoelectric conversion element on which a metallic light-shielding layer is formed, and a protective film and a first antireflection film formed on a predetermined region of the surface thereof. And a peripheral region including a peripheral circuit and a bonding pad, a method for manufacturing a solid-state imaging device in which a protective film is formed in a predetermined region on a semiconductor substrate. Forming a photosensitive transparent resin film having a dye dispersed therein, and then applying a photosensitive organic compound solution on the transparent resin film to form a photosensitive organic compound film; And a second step of patterning the transparent resin film and the organic compound film by using a mask having a pattern in which a circuit and a region of a bonding pad are opened. 8. A light-receiving region comprising a charge transfer element and a photoelectric conversion element on which a metallic light-shielding layer is formed, and a protective film and a first antireflection film formed on a predetermined region of the surface thereof. And a peripheral region including a peripheral circuit and a bonding pad, a method for manufacturing a solid-state imaging device in which a protective film is formed in a predetermined region on a semiconductor substrate. After forming a transparent resin film in which a dye is dispersed in, a first step of forming an organic compound film by applying an organic compound solution on the transparent resin film, and opening the peripheral circuit and bonding pad regions. And a second step of patterning the transparent resin film and the organic compound film by photolithography and etching using a mask having such a pattern as described above. . 9. The solid-state image sensor according to claim 1, wherein the second antireflection film is any one of casein, polyvinyl alcohol, and gelatin. .. 10. The method for manufacturing a solid-state imaging device according to claim 2, wherein the second antireflection film is casein, polyvinyl alcohol, or gelatin. A method of manufacturing a solid-state image sensor, comprising: