CN105027286A - Solid-state imaging device, production method therefor, and electronic device - Google Patents
Solid-state imaging device, production method therefor, and electronic device Download PDFInfo
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- CN105027286A CN105027286A CN201480012222.3A CN201480012222A CN105027286A CN 105027286 A CN105027286 A CN 105027286A CN 201480012222 A CN201480012222 A CN 201480012222A CN 105027286 A CN105027286 A CN 105027286A
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- 238000003384 imaging method Methods 0.000 title abstract description 10
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- 238000000034 method Methods 0.000 claims description 45
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- 238000005516 engineering process Methods 0.000 abstract description 41
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Abstract
The present technology relates to a solid-state imaging device that makes it possible to reduce unevenness in the application of an organic material, a production method for the solid-state imaging device, and an electronic device. The solid-state imaging device is provided with an effective pixel area in which effective pixels are arranged on a substrate, a wiring area around the effective pixel area in which an electrode or wiring is provided, a peripheral area that is more to the outside than the wiring area, and a film that is formed on the substrate. With regard to the film, the cross-sectional height of the effective pixel area is lower than the cross-sectional height of the wiring area, and the cross-sectional height of the peripheral area and at least part of the wiring area-side of an intermediate area that is sandwiched between the effective pixel area and the wiring area is configured to have a height that is between the cross-sectional height of the effective pixel area and the cross-sectional height of the wiring area. The present technology can be applied, for example, to a back-illuminated CMOS image sensor.
Description
Technical field
This technology relates to solid state image pickup device, the method manufacturing solid state image pickup device and electronic equipment.More specifically, this technology relates to a kind of solid state image pickup device, the method manufacturing solid state image pickup device and the electronic equipment that can reduce the uneven coating of organic material.
Background technology
In recent years, propose the rear surface irradiation type solid state image pickup device with three-dimensional structure, the light receiving surface that the circuit substrate being wherein formed with drive circuit is thereon formed with the semiconductor substrate of the pixel comprising photoelectric conversion unit from it attaches on opposite face (see, such as, patent documentation 1).This solid state image pickup device with three-dimensional structure comprises the connecting electrode for semiconductor substrate and circuit substrate being electrically connected together.
Fig. 1 illustrates the conventional sectional drawing with the configuration example of the rear surface irradiation type solid state image pickup device of three-dimensional structure.
In FIG, circuit substrate 11 and semiconductor substrate 12 fit together, and are electrically connected together by connecting electrode 13.In addition, dielectric film 14 is formed in the light receiving surface side (upside in Fig. 1) of semiconductor substrate 12.
In the solid state image pickup device shown in Fig. 1, dielectric film 14 is formed as making the height of the cross section of the pixel region being provided with multiple pixel (hereinafter referred to as " depth of section ") and as being provided with the height of cross section of neighboring area in outside in distribution region of connecting electrode 13 lower than the height of the cross section in distribution region.Like this, by reducing the profile of pixel region, sensitivity characteristic or colour mixture characteristic can improve.In addition, by reducing the profile of neighboring area, the constraint in the circuit layout in neighboring area or the configuration of alignment mark can relax, and the stress on substrate can reduce.
Citing document list
Patent documentation
Patent documentation 1:JP 2011-96851A
Summary of the invention
Technical problem
But, when the organic materials such as such as colour filter (CF) material are applied to the solid state image pickup device shown in Fig. 1, due to the difference in height between neighboring area and distribution area or the difference in height between distribution region and pixel region, the uneven coating of organic material may be there is.
Because this situation, complete this technology, to reduce the uneven coating of organic material.
The solution of problem
According to the first aspect of this technology, provide a kind of solid state image pickup device, comprising: the effective pixel area in substrate, valid pixel is configured in described effective pixel area; Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region; The neighboring area of described distribution areas outside; The film formed on the substrate.The depth of section of described film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are being sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
The stage portion of described film in described zone line can than the center of the width of described zone line closer to described effective pixel area.
The stage portion of described film in described zone line can than the center of the width of described zone line closer to described distribution region.
The flat shape of the stage portion of described film in described zone line, the stage portion between described zone line and described distribution region and/or the stage portion between described distribution region and described neighboring area can have in rounded shapes or at least one bight of inclined plane shape.
On the membrane with the adjacent domain of described distribution region adjacent, described distribution region can be formed with the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region.
Described height adjustment element can be formed in described adjacent domain in described neighboring area and/or described zone line.
When the flat shape in described distribution region has at least one gap, described height adjustment element can be formed to connect described gap.
Described height adjustment element can make the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
The flat shape of described height adjustment element can have in rounded shapes or at least one bight of inclined plane shape.
The recess that depth of section is less than the depth of section of described effective pixel area can be formed in having in the region of same cross-sectional height with described effective pixel area in described zone line of described film.
The recess that depth of section is identical with described effective pixel area can be formed in having in the region of same cross-sectional height with described neighboring area in described zone line of described film.
Can also be included in the photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel.The depth of section of described film in described effective pixel area can be less than the depth of section of described photomask.
According to the first aspect of this technology, provide a kind of method manufacturing solid state image pickup device, described solid state image pickup device comprises the effective pixel area in substrate, valid pixel is configured in described effective pixel area, distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region, the neighboring area of described distribution areas outside, the film formed on the substrate, said method comprising the steps of: make the depth of section of described film in described effective pixel area be less than the depth of section of described film in described distribution region, and make the depth of section of described film in described neighboring area and described film be sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
According to the first aspect of this technology, provide a kind of electronic equipment, comprise: solid state image pickup device, comprise the effective pixel area in substrate, valid pixel is configured in described effective pixel area, distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region, the neighboring area of described distribution areas outside, the film formed on the substrate, the depth of section of wherein said film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are at least between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region what be sandwiched in the zone line between described effective pixel area and described distribution region closer to the depth of section in the part in described distribution region, with the signal processing circuit of the output signal that process exports from described solid state image pickup device.
According to the first aspect of this technology, the depth of section of described film in described effective pixel area formed on the substrate is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are being sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
According to the second aspect of this technology, provide a kind of solid state image pickup device, comprising: the effective pixel area in substrate, valid pixel is configured in described effective pixel area; Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region; The neighboring area of described distribution areas outside; The film formed on the substrate.The depth of section of described film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region.On the membrane with the adjacent domain of described distribution region adjacent, be formed with the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region.
Described height adjustment element can be formed in described adjacent domain in described neighboring area and/or described effective pixel area.
When the flat shape in described distribution region has at least one gap, described height adjustment element can be formed to connect described gap.
Described height adjustment element can make the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
The flat shape of described height adjustment element can have in rounded shapes or at least one bight of inclined plane shape.
The recess that depth of section is less than the depth of section of described effective pixel area can be formed in the zone line being sandwiched between described effective pixel area and described distribution region of described film.
Can also be included in the photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel.The depth of section of described film in described effective pixel area can be less than the depth of section of described photomask.
According to the second aspect of this technology, provide a kind of method manufacturing solid state image pickup device, described solid state image pickup device comprises the effective pixel area in substrate, valid pixel is configured in described effective pixel area, distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region, the neighboring area of described distribution areas outside, the film formed on the substrate, said method comprising the steps of: make the depth of section of described film in described effective pixel area and described neighboring area be less than the depth of section of described film in described distribution region, form the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region on the membrane with the adjacent domain of described distribution region adjacent.
According to the second aspect of this technology, provide a kind of electronic equipment, comprise: solid state image pickup device, comprise the effective pixel area in substrate, valid pixel is configured in described effective pixel area, distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region, the neighboring area of described distribution areas outside, the film formed on the substrate, the depth of section of wherein said film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region, wherein, on the membrane with the adjacent domain of described distribution region adjacent, be formed with the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region, with the signal processing circuit of the output signal that process exports from described solid state image pickup device.
According to the second aspect of this technology, the depth of section of the described film formed on the substrate in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region.On the membrane with the adjacent domain of described distribution region adjacent, be formed with the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region.
The beneficial effect of the invention
According to first and second aspects of this technology, the uneven coating of organic material can be reduced.
Accompanying drawing explanation
Fig. 1 is the sectional view of the configuration example that conventional solid state image pickup device is shown.
Fig. 2 is the plane graph of the configuration example of the solid state image pickup device that this technology first embodiment is shown.
Fig. 3 is the sectional view of the configuration example of the solid state image pickup device that this technology first embodiment is shown.
Fig. 4 is the flow chart that the process manufacturing solid state image pickup device is described.
Fig. 5 is the sectional view of the manufacturing step that solid state image pickup device is shown.
Fig. 6 is the plane graph of the variation that solid state image pickup device is shown.
Fig. 7 is the plane graph of the variation that solid state image pickup device is shown.
Fig. 8 is the plane graph of the variation that solid state image pickup device is shown.
Fig. 9 is the sectional view of the configuration example of the solid state image pickup device that this technology second embodiment is shown.
Figure 10 is the figure of the example that the organic element formed in the adjacent domain in distribution region is shown.
Figure 11 is the figure of the example that the organic element formed in the adjacent domain in distribution region is shown.
Figure 12 is the figure of the example that the organic element formed in the adjacent domain in distribution region is shown.
Figure 13 is the figure of the example that the organic element formed in the adjacent domain in distribution region is shown.
Figure 14 is the figure of the example that the organic element formed in the adjacent domain in distribution region is shown.
Figure 15 is the flow chart that the process manufacturing solid state image pickup device is described.
Figure 16 is the sectional view of the variation that solid state image pickup device is shown.
Figure 17 is the sectional view of the variation that solid state image pickup device is shown.
Figure 18 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 19 is the sectional view of the variation that solid state image pickup device is shown.
Figure 20 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 21 is the figure of the shape in bight for illustration of organic element.
Figure 22 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 23 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 24 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 25 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 26 is the figure of the example that the organic element formed in distribution region and adjacent domain is shown.
Figure 27 is the plane graph of the variation that solid state image pickup device is shown.
Figure 28 is the sectional view of the configuration example of the solid state image pickup device that this technology the 3rd embodiment is shown.
Figure 29 is the figure of the example that the recess formed in zone line is shown.
Figure 30 is the figure of the example that the recess formed in zone line is shown.
Figure 31 is the sectional view of the variation that solid state image pickup device is shown.
Figure 32 is the sectional view of the variation that solid state image pickup device is shown.
Figure 33 is the figure of the example that the recess formed in zone line is shown.
Figure 34 is the figure of the example that the recess formed in zone line is shown.
Figure 35 is the sectional view of the configuration example of the solid state image pickup device that this technology the 4th embodiment is shown.
Figure 36 is the sectional view of the detailed configuration example that solid state image pickup device is shown.
Figure 37 is the sectional view of the variation that solid state image pickup device is shown.
Figure 38 is the sectional view of the variation that solid state image pickup device is shown.
Figure 39 is the sectional view of the variation that solid state image pickup device is shown.
Figure 40 is the sectional view of the configuration example of the solid state image pickup device that this technology the 5th embodiment is shown.
Figure 41 is the plane graph of another configuration example that the solid state image pickup device that this technology is suitable for is shown.
Figure 42 is the calcspar of the configuration example of the electronic equipment that this technology the 6th embodiment is shown.
Embodiment
The embodiment of this technology is described below with reference to accompanying drawings.Note that and will be described in the following order.
1. the first embodiment (formation of multiple depth of section)
2. the second embodiment (formation of height adjustment element)
3. the 3rd embodiment (formation of recess)
4. the 4th embodiment (reduction of insulator film thickness)
5. the 5th embodiment (above irradiation type solid state image pickup device)
6. the 6th embodiment (electronic equipment)
<1. the first embodiment >
(configuration example of solid state image pickup device)
Fig. 2 is the plane graph of the configuration example of the solid state image pickup device that this technology first embodiment is shown.
The solid state image pickup device 20 of Fig. 2 is rear surface irradiation type complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor with three-dimensional structure, it comprise the sensor base plate 21 that it is formed with multiple pixel and on the top that circuit substrate is placed on sensor base plate 21 time fit to circuit substrate (not shown) on sensor base plate 21.Note that solid state image pickup device 20 can be irradiation type cmos image sensor or charge coupled device (CCD) imageing sensor above.
A surface of sensor base plate 21 is light receiving surfaces.In light receiving surface, be provided with wherein for obtain catch image valid pixel with the effective pixel area 31 of rectangular two-dimensional arrangement.Each valid pixel has the image element circuit comprising photoelectric conversion unit, charge accumulation unit, multiple transistor, capacitor etc.A part for image element circuit is arranged on the front surface of the opposite side of the light receiving surface as sensor base plate.Note that multiple pixel can share a part for image element circuit.
In addition, around effective pixel area 31, comprise the distribution region 32 of the connecting electrode being provided with and sensor base plate 21 and circuit substrate being electrically connected together and the distribution be connected with connecting electrode at sensor base plate 21, be also included in the neighboring area 33 outside distribution region 32.In the present embodiment, distribution region 32 is formed as the rectangular shape surrounding rectangle effective pixel area 31 separately.
Note that in sensor base plate 21, the black pixel of the optics for obtaining black level (OPB pixel) is arranged in the zone line 34 be sandwiched between effective pixel area 31 and distribution region 32.In addition, the stage portion 34a as the border between different cross section height is arranged in zone line 34.
(sectional view of solid state image pickup device)
Fig. 3 is the sectional view of the solid state image pickup device 20 of the line A-A ' illustrated along Fig. 2.Under note that the state that the solid state image pickup device 20 of Fig. 3 is in manufacture process, particularly, under the state before coating colour filter (CF).
The solid state image pickup device 20 of Fig. 3 comprises sensor base plate 21, fit to the circuit substrate 41 of the opposite face of the light receiving surface of sensor base plate 21, the through hole 42 as connecting electrode that sensor base plate 21 and circuit substrate 41 is electrically connected together and the distribution (not shown) be connected with through hole 42.
Sensor base plate 21 is included in effective pixel area 31 with the valid pixel of rectangular two-dimensional arrangement and the OPB pixel in zone line 34.
Circuit substrate 41 comprises the drive circuit for driving each pixel be arranged on sensor base plate 21.The image element circuit that drive circuit is comprised by through hole 42 and each pixel be arranged on sensor base plate 21 is connected.
In addition, in effective pixel area 31 and zone line 34, on sensor base plate 21, such as photomask 43 is formed by tungsten (W).Photomask 43 has the multiple opening 43a in the region of the photoelectric conversion unit of each valid pixel of the formation being arranged on effective pixel area 31, to cover the light between neighborhood pixels.The peripheral circuit 44 comprising electrode pad and distribution is arranged on sensor base plate 21 in neighboring area 33.
In addition, on the sensitive surface side of sensor base plate 21 by such as silica (SiO
2) form dielectric film 45, through hole 42, photomask 43 and peripheral circuit 44 are embedded in dielectric film 45.
Dielectric film 45 is the thickest in distribution region 32, neighboring area 33 and zone line 34 than stage portion 34a closer to the region in distribution region 32 in second thick, zone line than stage portion 34a closer to the region of effective pixel area 31 and effective pixel area 31 in the thinnest.Particularly, in the solid state image pickup device 20 of Fig. 3, the depth of section of dielectric film 45 in effective pixel area 31 is less than the depth of section of dielectric film 45 in distribution region 32, and dielectric film 45 to be in closer to the depth of section in the region in distribution region 32 than stage portion 34a between the depth of section of dielectric film 45 in effective pixel area 31 and the depth of section of dielectric film 45 in distribution region 32 at neighboring area 33 and zone line 34.
According to said structure, difference in height between neighboring area 33 and distribution region 32 reduces, and arrange multiple step between distribution region 32 and effective pixel area 31, therefore, the fluid pressure occurred at step place when the coating of the organic materials such as such as CF material reduces.This can reduce uneven coating, and therefore, the organic material of coating can have uniform thickness.
Please note, stage portion 34a is arranged in zone line 34 in the position of (that is, between the end closer to distribution region 32 of effective pixel area 31 and the end closer to effective pixel area 31 in distribution region 32) between the width of zone line 34.Here, reduce in the uneven coating of organic material and catch between the uneven frame of image or the reduction of shade and there is trade-off relationship, and this relation depends on the position of stage portion 34a in zone line 34.
Particularly, if the stage portion 34a in zone line 34 than the center of the width of zone line 34 closer to effective pixel area 31, so the uneven coating of organic material reduces further.On the other hand, if the stage portion 34a in zone line 34 than the center of the width of zone line 34 closer to distribution region 32, so uneven frame or shade reduce further.
(manufacturing the process of solid state image pickup device)
Then, the process manufacturing solid state image pickup device 20 is described with reference to Fig. 4 and Fig. 5.Fig. 4 is the flow chart for illustration of the process manufacturing solid camera head 20.Fig. 5 is the sectional drawing of solid state image pickup device 20 in the step manufactured.
Note that in the following description, until through hole 42, photomask 43 and peripheral circuit 44 being formed in the process of the sensitive surface side of sensor base plate 21 by usually carrying out, therefore, no longer will being described, process is subsequently described.
Particularly, in step s 11, as shown in Figure 5A, the light receiving surface side of sensor base plate 21 forms dielectric film 45, through hole 42, photomask 43 and peripheral circuit 44 are embedded in dielectric film 45.
In step s 12, as shown in Figure 5 B, in distribution region 32, Resist patterns 61 is formed.
In step s 13, Resist patterns 61 is used to carry out etch processes as mask.Consequently, as shown in Figure 5 C, in the region (that is, effective pixel area 31, neighboring area 33 and zone line 34) outside the region forming Resist patterns 61, dielectric film 45 is etched.
In step S14, as shown in Figure 5 D, in distribution region 32, Resist patterns 62 is formed.
In step S15, Resist patterns 62 is used to carry out etch processes as mask.Consequently, as shown in fig. 5e, in the region (that is, a part for effective pixel area 31 and zone line 34) outside the region forming Resist patterns 62, dielectric film 45 is etched.
In step s 16, dielectric film 45 is coated with green CF material.In addition, in step S17, be coated with red CF material, in step S18, be coated with blue CF material.
Thereafter, in step S19, for lens in each valid pixel formation sheet of effective pixel area 31, and the process manufacturing solid state image pickup device 20 terminates.
Here, in the process above, suppose to form different depth of sections by etching dielectric film 45 in different regions.Selectively, different depth of sections can be formed by being etched in planarization film, diaphragm etc. that sensor base plate 21 is formed.
According to above-mentioned process, difference in height between neighboring area 33 and distribution region 32 reduces, and arrange multiple step between distribution region 32 and effective pixel area 31, therefore, the fluid pressure occurred at step place when the coating of the organic materials such as such as CF material reduces.This can reduce uneven coating, and therefore, the organic material of coating can have uniform thickness.
Note that in the process above, suppose to use Resist patterns 61 or Resist patterns 62 to have rectangular planar shape as the region of mask etching.Selectively, etching can be carried out making the bight of rectangle have rounded shapes.
Such as, if use Resist patterns 62 to have rounded shapes as the bight of the rectangular area of mask etching, so in zone line 34, the bight of the flat shape of stage portion 34a has rounded shapes, as shown in Figure 6.
In addition, if use Resist patterns 61 to have rounded shapes as the inside angle part (closer to effective pixel area 31) of the rectangular area of mask etching, the bight of the flat shape of the stage portion so between distribution region 32 and zone line 34 has rounded shapes, as shown in Figure 7.
In addition, if use Resist patterns 61 to have rounded shapes as the outer corners (closer to neighboring area 33) of the rectangular area of mask etching, the bight of the flat shape of the stage portion so between distribution region 32 and neighboring area 33 has rounded shapes, as shown in Figure 8.Note that the bight of the flat shape of the stage portion between distribution region 32 and neighboring area 33 can have rounded shapes by cutting bight.
Like this, have rounded shapes by the bight of the flat shape making stage portion, the organic material in flowing and shock bight can flow swimmingly, and therefore, uneven coating can reduce further.
Note that the process making a part for the flat shape of stage portion have rounded shapes by etching can be carried out all stage portion illustrated with reference to Fig. 6 ~ Fig. 8, or can carry out any one stage portion.
In addition, not all bights (corner) in rectangular step portion all need to have rounded shapes.Any one bight of predetermined stage portion can have rounded shapes, and this depends on the direction of coating CF material.
<2. the second embodiment >
(configuration example of solid state image pickup device)
Fig. 9 is the sectional view of the configuration example of the solid state image pickup device that this technology second embodiment is shown.
Note that, in the sectional view of Fig. 9, the part identical with the sectional view of Fig. 3 is represented with identical Reference numeral by identical title, and will no longer illustrate unless necessary.
In the solid state image pickup device 100 shown in Fig. 9, same with the solid state image pickup device of Fig. 1, dielectric film 45 is identical with the depth of section of dielectric film 45 in effective pixel area 31 with the depth of section in zone line 34 in neighboring area 33.In addition, in the region (hereinafter referred to as adjacent domain) contiguous with distribution region 32, organic element 101a and 101b as the height adjustment element for making the depth of section of adjacent domain roughly the same with the depth of section in distribution region 32 is formed.
Particularly, as shown in Figure 10, organic element 101a and 101b is formed in the adjacent domain of neighboring area 33 and zone line 34, to increase the width in the extension distribution region 32 with convex shape section.Organic element 101a with 101b is identical with dielectric film 45 such as by silica (SiO
2) formed.
Like this, by increasing the width with the distribution region 32 of convex shape section, the uneven coating when the coating of organic material can reduce, and therefore, the organic material of coating can have uniform thickness.
Note that as shown in figure 11, organic element 101a and 101b that the bight of the flat shape in distribution region 32 is formed can have rounded shapes.Rounded shapes can have the curvature of such as more than 500 μm.This makes to flow and the organic material clashing into bight flows swimmingly, and therefore, uneven coating can reduce further.
Although organic element 101a and 101b has the bight in rounded shapes in fig. 11, any one in organic element 101a and 101b can have the bight in rounded shapes.
In addition, as shown in figure 12, when the flat shape in distribution region 32 has gap (discontinuous part) in its part (bight in Figure 12), organic element 102 can be formed as adjacent domain to connect this gap.
Like this, by the gap of the flat shape in connection wiring region 32, the upset that the fluid occurred in gap flows be lowered when the coating of the organic materials such as such as CF material, therefore, uneven coating can reduce further.
Note that as shown in figure 13, the organic element 102 formed in the gap of the flat shape in distribution region 32 can be formed as having rounded shapes.Rounded shapes can have the curvature of such as more than 500 μm.This makes to flow and the organic material clashing into bight flows swimmingly, and therefore, uneven coating can reduce further.
Although the bight, inner side and outer side of organic element 102 all has rounded shapes in fig. 13, any one of the bight, inner side and outer side of organic element 102 can have rounded shapes.
Note that the formation shown in Figure 12 or Figure 13 can combine with the formation of Figure 10 or Figure 11, to increase the width in distribution region 32.
In addition, as shown in figure 14, the organic element 103 of point-like can be formed to fill the gap of the flat shape in distribution region 32.In this case, such as, each point has the diameter of more than 2 μm, and is spaced apart more than 5 μm between each point.Note that shape is a little not limited to circle, can be rectangle, triangle etc.
Note that in the above-described configuration, the difference between the depth of section and the depth of section of adjacent domain in distribution region 32 is wished in the scope of ± 400 μm.
(manufacturing the process of solid state image pickup device)
Then, the flow chart with reference to Figure 15 illustrates the process manufacturing solid state image pickup device 100.
Note that the process of the step S11 of the flow chart of the step S31 of the flow chart of Figure 15 and the process of S34 ~ S37 and Fig. 4 and S16 ~ S19 is similar, therefore, be no longer described.
Particularly, in step s 32, in distribution region 32 and adjacent domain, Resist patterns is formed.
Thereafter, in step S33, use the Resist patterns formed to carry out etch processes as mask.Here, dielectric film 45 is etched, make the depth of section in final effective pixel area 31 identical with the depth of section in zone line 34 with the neighboring area 33 beyond adjacent domain.
According to above-mentioned process, organic element is formed in the adjacent domain in distribution region 32, and like this, as mentioned above, the uneven coating when the coating of the organic materials such as such as CF material can reduce, and therefore, the organic material of coating has uniform thickness.
Note that the organic element formed in the adjacent domain in distribution region 32 can be formed by such as green CF material.In this case, in the step S32 of the flow chart of Figure 15, Resist patterns is only formed in distribution region, and before green CF material coating in step S34, organic element uses green CF material to be formed in the adjacent domain in distribution region 32.
In addition, as shown in figure 16, in the solid state image pickup device 20 of the first embodiment, organic element 101a and 101b can be formed in the adjacent domain (neighboring area 33 and zone line 34) in distribution region 32, although or not shown, organic element can be formed in the gap of the flat shape in distribution region 32.The uneven coating of organic material can be reduced so further.
In addition, as shown in figure 17, as height adjustment element, organic element 111 can be formed, make the depth of section in adjacent domain roughly the same with the depth of section in distribution region 32, and in addition, make the depth of section at least comprised in the region in distribution region 32 be greater than depth of section in adjacent domain.Particularly, the solid camera head 100 of Figure 17 be the protuberance (organic element) making the depth of section at least comprised in the region in distribution region 32 be greater than the depth of section in adjacent domain in the solid state image pickup device 100 of Fig. 9 be arranged on comprise distribution region 32 region on.
Please note, in the solid state image pickup device 100 of Figure 17, depth of section in adjacent domain can be roughly the same with the depth of section in distribution region 32, or depth of section in distribution region 32 (depth of section that note that in adjacent domain can be less than the depth of section in the region comprising distribution region 32) can be more than or equal to.
Like this, by arranging multiple step between neighboring area 33 and distribution region 32 and between distribution region 32 and effective pixel area 31, uneven coating can reduce.
Note that identical with Figure 11, as shown in figure 18, organic element 111 can be formed as having the bight in rounded shapes.This makes the organic material in the bight of flowing and clashing into organic element 111 flow swimmingly, and therefore, uneven coating can reduce further.
Although the bight, inner side and outer side of organic element 111 all has rounded shapes in figure 18, any one of the bight, inner side and outer side of organic element 111 can have rounded shapes.
Note that organic element 111 is formed as follows when organic element 111 is such as formed by the material identical with dielectric film 45.Form dielectric film 45 in the step S31 of the flow chart of Figure 15 after, in the region (region that depth of section is maximum) comprising distribution region 32, form Resist patterns, carry out etch processes, and carry out process and the subsequent treatment of step S32.
In addition, as shown in figure 19, in the solid state image pickup device 20 of the first embodiment, organic element 111 can be formed.Consequently, between distribution region 32 and effective pixel area 31, arrange multiple step, therefore, the uneven coating of organic material can reduce further.
In addition, in the formation shown in Figure 19, as shown in figure 20, organic element 111 can be formed as having the bight in rounded shapes.This makes the organic material in the bight of flowing and clashing into organic element 111 flow swimmingly, and therefore, uneven coating can reduce further.
Although the bight, inner side and outer side of organic element 111 all has rounded shapes in fig. 20, any one of the bight, inner side and outer side of organic element 111 can have rounded shapes.
In addition, in above-mentioned situation, not all bights (corner) of organic element all need to have rounded shapes.Any one bight of organic element can have rounded shapes, and this depends on the direction of coating CF material.
In above-mentioned situation, the bight of organic element has rounded shapes, to reduce uneven coating.But, if there is constraint for the configuration of alignment mark or distribution, the bight of organic element so can not be made to have the rounded shapes that curvature reduces uneven coating effectively.
Such as, as shown in the left side of Figure 21, when organic element 111 is formed under the constraint of the configuration of distribution region 32 and alignment mark (not shown), as mentioned above, if the bight of organic element 111 has the rounded shapes of such as curvature more than 500 μm, so organic element 111 is not formed on the region 32a as the part in distribution region 32.
Note that if organic element is formed by such as green CF material, so organic element is used as the antireflection film reducing solar flare or ghost image.In order to improve the function as antireflection film, it is desirable to form the organic element with area large as far as possible.But if organic element has the bight in rounded shapes, so area reduces greatly.
Therefore, in the following description, be used as antireflection film even if exist for the constraint of the configuration of alignment mark, distribution etc. or organic element, the example of useful organic element is also described.Note that as organic element, illustrate the organic element 111 shown in Figure 17.
(variation of organic element)
First, as shown in figure 22, organic element 111 can be formed as having the bight being chamfered and having inclined plane shape.In fig. 22, from top view, the bight of organic element 111 along with the both sides forming bight with 45 ° of crossing straight cuts, two bights newly formed have the angle of 135 °.The length of chamfered portion is such as less than 200 μm.This makes to flow and the organic material clashing into bight flows swimmingly, and therefore, uneven coating can reduce further.
Note that from top view, the angle (slope) of the straight line that the bight of organic element 111 is cut along it is not limited to 45 °.In addition, can cut sth. askew further in the bight newly formed by cutting sth. askew.By repeatedly cutting sth. askew, the shape in bight can close to rounded shapes.
In addition, as shown in figure 23, from top view, the bight of organic element 111 can be cut along zigzag line, and this zigzag line extends along with the both sides forming bight with 45 ° of crossing straight lines.This zigzag line is the wavy zigzag line of triangle that the pole short lines (such as, the straight line of less than 10 μm) of direction alternately change (such as, 90 °) at a predetermined angle repeats.In this case, from macroscopic observation, the bight of organic element 111 is bights of along straight line cutting sth. askew identical with the example of Figure 22.
Note that so the bight of organic element 111 identically with the example of Figure 17 can have rounded shapes from macroscopic observation if the bight of organic element 111 extends along its zigzag line cut along the arc-shaped curve with predetermined curvature.
In addition, as shown in figure 24, from top view, the bight of organic element 111 can along with the both sides forming bight with 45 ° of crossing straight cuts, a part for this straight line is curve.Selectively, as shown in figure 25, from top view, the bight of organic element 111 can along with the both sides forming bight with 45 ° of crossing straight cuts, a part for this straight line is zigzag line.
In addition, as shown in the left side of Figure 21, have in the organic element 111 in zigzag manner bight under for the constraint of alignment mark, as shown in figure 26, bight can be chamfered, and makes each bight bending to form waveform shape.
Note that above-mentioned variation is not limited to the organic element 111 shown in Figure 17, go for the organic element 102 shown in organic element 101a and 101b, Figure 13 shown in Fig. 9 and Figure 16 and the organic element shown in Figure 19 111.
In addition, in the first embodiment, the bight (Fig. 8) of the flat shape of the bight (Fig. 6) of the flat shape of the stage portion 34a in zone line 34, the bight (Fig. 7) of flat shape of stage portion between distribution region 32 and zone line 34 and the stage portion between distribution region 32 and neighboring area 33 has rounded shapes.Selectively, at least one in the bight of the flat shape of these stage portion can have the inclined plane shape illustrated with reference to Figure 22 ~ Figure 26.
The bight of the flat shape of such as, stage portion particularly, as shown in figure 27, between distribution region 32 and neighboring area 33 can be mitered into inclined plane shape.
This makes to flow and the organic material clashing into the bight in stage portion flows swimmingly, and therefore, uneven coating can reduce further.
<3. the 3rd embodiment >
(configuration example of solid state image pickup device)
Figure 28 is the sectional view of the configuration example of the solid state image pickup device that this technology the 3rd embodiment is shown.
Note that, in the sectional view of Figure 28, the part identical with the sectional view of Fig. 3 is represented with identical Reference numeral by identical title, and will no longer illustrate unless necessary.
In the solid state image pickup device 130 shown in Figure 28, the recess 131 that depth of section is less than effective pixel area 31 is formed in having in the region of same cross-sectional height with effective pixel area 31 in zone line 34 of dielectric film 45.
Particularly, as shown in figure 29, recess 131 is formed in zone line 34, and the limit along the rectangle effective pixel area 31 of separating extends.
Like this, by arranging recess 131 in zone line 34, when being coated with the organic materials such as such as CF material, the inclination of the organic material occurred due to the fluid kept in the zone line 34 near stage portion 34a can become smooth, therefore, the organic material of coating can have uniform thickness.
Especially, at fluid by the adjacent corner of the flat shape of stage portion 34a easily kept, as shown in figure 29, recess 131 can have large rectangle bight.Selectively, as shown in figure 30, the inner side in the bight of recess 131 can have rounded shapes.
Note that recess 131 is formed in the step S15 of the flow chart of Fig. 4 as follows.Etch dielectric film 45 in effective pixel area 31 and the region as a part for zone line 34 after, form Resist patterns in the region beyond recess 131, and again carry out etch processes.
In addition, as shown in figure 31, recess 131 can be formed in the solid state image pickup device 100 of the second embodiment.
In addition, as the solid state image pickup device 150 shown in Figure 32, the recess 151 that depth of section is identical with effective pixel area 31 can be formed in the region identical with neighboring area 33 at zone line 34 middle section height of dielectric film 45.
In addition, in this case, identical with Figure 29, as shown in figure 33, recess 151 is formed in zone line 34, and the limit along the rectangle effective pixel area 31 (stage portion 34a) of separating extends.
Like this, by arranging recess 151 in zone line 34, when being coated with the organic materials such as such as CF material, the inclination of the organic material occurred due to the fluid kept in the zone line 34 near the stage portion between distribution region 32 and zone line 34 can become smooth, therefore, the organic material of coating can have uniform thickness.
Especially, at fluid by the adjacent corner of the flat shape of stage portion 34a easily kept, as shown in figure 33, recess 151 can have large rectangle bight.Selectively, as shown in figure 34, the inner side in the bight of recess 151 can have rounded shapes.
Note that recess 151 is formed in the step S15 of the flow chart of Fig. 4 as follows.In effective pixel area 31 and the region as a part for zone line 34, etch dielectric film 45, and in addition, etch recess 151.
Note that in the solid state image pickup device of above-mentioned the present embodiment, at least one bight of the flat shape of the stage portion in each region can have rounded shapes or inclined plane shape.In addition, in the solid state image pickup device of the present embodiment, as in the solid state image pickup device of the second embodiment, can organic element be set, and at least one bight of organic element can have rounded shapes or inclined plane shape.
<4. the 4th embodiment >
(configuration example of solid state image pickup device)
Figure 35 is the sectional view of the configuration example of the solid state image pickup device that this technology the 4th embodiment is shown.
Note that, in the sectional view of Figure 35, the part identical with the sectional view of Fig. 3 is represented with identical Reference numeral by identical title, and will no longer illustrate unless necessary.
In the solid state image pickup device 160 shown in Figure 35, same with the solid state image pickup device of Fig. 1, the depth of section of dielectric film 45 in effective pixel area 31 is less than the depth of section of dielectric film 45 in distribution region 32, and dielectric film 45 to be in closer to the depth of section in the region in distribution region 32 than stage portion 34a between the depth of section of dielectric film 45 in effective pixel area 31 and the depth of section of dielectric film 45 in distribution region 32 at neighboring area 33 and zone line 34.In addition, the depth of section of dielectric film 45 in effective pixel area 31 is less than the depth of section of the photomask 43 of the opening 43a of the photoelectric conversion unit had corresponding to each valid pixel.
Figure 36 is for the figure of the cross section of the solid state image pickup device by the first embodiment compared with the cross section of the solid state image pickup device of the present embodiment.
In the solid state image pickup device of the present embodiment shown in the solid state image pickup device of the first embodiment shown in Figure 36 A and Figure 36 B; except the formation of Fig. 1 and Figure 35; antireflection film 161 is formed between sensor base plate 21 and photomask 43, and transparent protective film 162 is formed in effective pixel area 31 and zone line 34 on dielectric film 45.
In addition, in Figure 36 A and Figure 36 B, on photoelectric conversion unit 163, colour filter 164 and sheet, lens 165 are arranged for each valid pixel.
Here, compared with the solid state image pickup device of the first embodiment shown in Figure 36 A, in the solid state image pickup device of the present embodiment shown in Figure 36 B, in effective pixel area 31, the thickness of dielectric film 45 is less, therefore, the sensitivity of each valid pixel can improve.In addition, the distance between photoelectric conversion unit 163 and colour filter 164 can reduce, and therefore, can improve to the patience of colour mixture.
Note that the dielectric film 45 of the present embodiment is formed as follows.In the step S13 of the flow chart of Fig. 4, add man-hour when etching (dry ecthing) to dielectric film 45, when photomask 43 expose the terminal be detected as endpoint detector (EPD), etching and processing terminates.
Consequently, can thickness under absorbent insulation film 45 change or when photomask 43 expose the terminal be not detected as EPD time the change of etching and processing, therefore, different with wafer and the solid state image pickup device of change can be manufactured.
Note that and replace the formation shown in Figure 36 B, the solid state image pickup device of the present embodiment such as can have the formation that wherein dielectric film 45 is as shown in figure 37 formed as covering the photomask 43 exposed due to etching and processing.
In addition, the solid state image pickup device of the present embodiment can have formation or the wherein inchoate formation of transparent protective film 162 as shown in fig. 38b that wherein transparent protective film 162 is as shown in fig. 38 a formed as the dielectric film 45 covering through hole 42 (distribution region 32) top.When transparent protective film 162 is not formed, colour filter 164 uses adhesion promoter to be formed on dielectric film 45.
In addition, as shown in figure 39, in the solid state image pickup device 100 of the second embodiment, the depth of section of dielectric film 45 in effective pixel area 31 and zone line 34 can be less than the depth of section of photomask 43.Note that in this case, as shown in figure 39, the depth of section of neighboring area 33 can be identical with the depth of section of zone line 34 with effective pixel area 31, or can be greater than the depth of section of effective pixel area 31 and zone line 34.
In addition, the solid state image pickup device of the present embodiment goes for the solid state image pickup device of the second to the 4th embodiment.
Although be illustrated the formation that this technology is applicable to rear surface irradiation type cmos image sensor in the above description, this technology goes for such as the solid state image pickup device such as irradiation type cmos image sensor or ccd image sensor above.
<5. the 5th embodiment >
(configuration example of solid state image pickup device)
Figure 40 is the sectional view of the configuration example of the solid state image pickup device that this technology the 5th embodiment is shown.
Note that the solid state image pickup device 170 of hypothesis shown in Figure 40 has the plane being similar to the solid state image pickup device 20 shown in Fig. 2 and form.
Solid state image pickup device 170 is configured to so-called irradiation type cmos image sensor above.The transparent protective film 173 that the solid state image pickup device 170 of Figure 40 comprises sensor base plate 171, is formed in the dielectric film 172 on the light receiving surface of sensor base plate 171 and is formed on dielectric film 172.
Sensor base plate 171 is included in effective pixel area 31 for the photoelectric conversion unit 174 of the valid pixel of rectangular two-dimensional arrangement.In addition, in effective pixel area 31, on colour filter 175 and sheet, lens 176 are formed on transparent protective film 173 for each valid pixel.
In addition, dielectric film 172 is also included in the copper wiring 177 in effective pixel area 31 and distribution region 32 and the Al distribution 178 in distribution region 32.
Dielectric film 172 is the thickest in distribution region 32, zone line 34 than stage portion 34a closer to the region in distribution region 32 in second thick, zone line 34 than stage portion 34a closer to the region of effective pixel area 31 and effective pixel area 31 in the thinnest.Particularly, in the solid state image pickup device 170 of Figure 40, the depth of section of dielectric film 172 in effective pixel area 31 is less than the depth of section of dielectric film 172 in distribution region 32, dielectric film 172 to be in closer to the depth of section in the region in distribution region 32 than stage portion 34a between the depth of section of dielectric film 172 in effective pixel area 31 and the depth of section of dielectric film 172 in distribution region 32 at zone line 34.
Consequently, between distribution region 32 and effective pixel area 31, arrange multiple step, therefore, when the coating of the organic materials such as such as CF material, uneven coating can reduce, and the organic material of coating can have uniform thickness.
Note that the solid state image pickup device of the above-mentioned first to the 5th embodiment is also applicable to the such distribution region 32 of wherein solid state image pickup device 20 as shown in Figure 2 and is arranged on the formation that the formation in the outside of effective pixel area 31 and distribution region 32 that wherein solid state image pickup device 180 is as shown in figure 41 such are arranged on the inner side of effective pixel area 31.
Note that this technology is not limited to be adapted to detect and incide device and the solid state image pickup device of catching the distribution of the amount of the visible ray of image, be also applicable to the solid state image pickup device of the distribution of the amount of catching the infrared light, X ray, particle etc. that incide device.
In addition, this technology is not limited to the unit picture element in behavior unit sequential scanning pixel region to read the solid state image pickup device of picture element signal from each unit pixel.This technology is also applicable to select arbitrary pixel in units of pixel and in units of pixel, reads the X-Y addressing type solid state image pickup device of signal from the pixel selected.Note that solid state image pickup device can be formed as one single chip, or can be the form of the module with imaging function, wherein pixel cell and signal processing unit or optical system and solid state image pickup device be packaged together.
In addition, this technology is not limited to be applicable to solid state image pickup device, is also applicable to imaging device.Here, imaging device refers to that such as the camera system such as Digital Still Camera, digital camera or such as mobile phone etc. have the electronic equipment of imaging function.Note that the pattern of the module that imaging device can also refer to comprise in electronic equipment, that is, camera model.
<6. the 6th embodiment >
(configuration example of electronic equipment)
Here, the configuration example of the electronic equipment of this technology the 6th embodiment is described with reference to Figure 42.
Electronic equipment 200 shown in Figure 42 comprises solid state image pickup device 201, optical lens 202, shutter device 203, drive circuit 204 and the signal processing circuit 205 that this technology is suitable for.Figure 42 illustrates that the solid state image pickup device 20 of above-mentioned technology first embodiment is provided as the embodiment (Digital Still Camera) of the situation of solid state image pickup device 201 in the electronic device.
Optical lens 202 makes to be focused on the imaging surface of solid state image pickup device 201 from writing the image light of body (incident light).Consequently, signal charge accumulates the scheduled time in solid state image pickup device 201.Shutter device 203 controls light irradiation time relative to solid state image pickup device 201 and shading time.
Drive circuit 204 is provided for the drive singal controlling the Signal transmissions operation of solid state image pickup device 201 and the shutter operation of shutter device 203.Solid state image pickup device 201 carries out Signal transmissions according to the drive singal (timing signal) supplied from drive circuit 204.Signal processing circuit 205 carries out various signal transacting to the signal exported from solid state image pickup device 201.The video signal having carried out signal transacting is stored in the storage mediums such as such as memory, or outputs to monitor.
In the electronic equipment 200 of the present embodiment, in solid state image pickup device 201, uneven coating can reduce, and consequently, picture quality is improved.
Note that the embodiment of this technology is not limited to above-mentioned embodiment, various change can be carried out in the scope not deviating from this technology or spirit.
In addition, this technology also can be formed as follows.
(1) solid state image pickup device, comprising:
Effective pixel area in substrate, valid pixel is configured in described effective pixel area;
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region;
The neighboring area of described distribution areas outside; With
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are being sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
(2) solid state image pickup device as described in (1),
The stage portion of wherein said film in described zone line than the center of the width of described zone line closer to described effective pixel area.
(3) solid state image pickup device as described in (1),
The stage portion of wherein said film in described zone line than the center of the width of described zone line closer to described distribution region.
(4) solid state image pickup device according to any one of (1) ~ (3),
The flat shape of the stage portion of wherein said film in described zone line, the stage portion between described zone line and described distribution region and/or the stage portion between described distribution region and described neighboring area has in rounded shapes or at least one bight of inclined plane shape.
(5) solid state image pickup device as described in (1),
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with.
(6) solid state image pickup device as described in (5),
Wherein said height adjustment element is formed in described adjacent domain in described neighboring area and/or described zone line.
(7) solid state image pickup device as described in (5) or (6),
Wherein when the flat shape in described distribution region has at least one gap, described height adjustment element is formed to connect described gap.
(8) solid state image pickup device as described in (5),
Wherein said height adjustment element makes the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
(9) solid state image pickup device according to any one of (5) ~ (8),
The flat shape of wherein said height adjustment element has in rounded shapes or at least one bight of inclined plane shape.
(10) solid state image pickup device according to any one of (1) ~ (8),
The recess that wherein depth of section is less than the depth of section of described effective pixel area is formed in having in the region of same cross-sectional height with described effective pixel area in described zone line of described film.
(11) solid state image pickup device as described in (1),
The recess that wherein depth of section is identical with described effective pixel area is formed in having in the region of same cross-sectional height with described neighboring area in described zone line of described film.
(12) solid state image pickup device according to any one of (1) ~ (10), also comprises:
Photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described photomask.
(13) manufacture a method for solid state image pickup device, described solid state image pickup device comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
Said method comprising the steps of:
Make the depth of section of described film in described effective pixel area be less than the depth of section of described film in described distribution region, and make the depth of section of described film in described neighboring area and described film be sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
(14) electronic equipment, comprising:
Solid state image pickup device, comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are at least between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region what be sandwiched in the zone line between described effective pixel area and described distribution region closer to the depth of section in the part in described distribution region; With
Process the signal processing circuit of the output signal exported from described solid state image pickup device.
(15) solid state image pickup device, comprising:
Effective pixel area in substrate, valid pixel is configured in described effective pixel area;
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region;
The neighboring area of described distribution areas outside; With
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region, and
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with.
(16) solid state image pickup device as described in (15),
Wherein said height adjustment element is formed in described adjacent domain in described neighboring area and/or described effective pixel area.
(17) solid state image pickup device as described in (15),
Wherein when the flat shape in described distribution region has at least one gap, described height adjustment element is formed to connect described gap.
(18) solid state image pickup device as described in (15),
Wherein said height adjustment element makes the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
(19) solid state image pickup device according to any one of (15) ~ (18),
The flat shape of wherein said height adjustment element has in rounded shapes or at least one bight of inclined plane shape.
(20) solid state image pickup device as described in (15),
The recess that wherein depth of section is less than the depth of section of described effective pixel area is formed in the zone line being sandwiched between described effective pixel area and described distribution region of described film.
(21) solid state image pickup device according to any one of (15) ~ (19), also comprises:
Photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described photomask.
(22) manufacture a method for solid state image pickup device, described solid state image pickup device comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
Said method comprising the steps of:
The depth of section of described film in described effective pixel area and described neighboring area is made to be less than the depth of section of described film in described distribution region; With
Form the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region on the membrane with the adjacent domain of described distribution region adjacent.
(23) electronic equipment, comprising:
Solid state image pickup device, comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region, and
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with; With
Process the signal processing circuit of the output signal exported from described solid state image pickup device.
Reference numerals list
20 solid state image pickup devices
21 sensor base plates
31 effective pixel area
32 distribution regions
33 neighboring areas
34 zone lines
34a stage portion
42 through holes
45 dielectric films
100 solid state image pickup devices
101a, 101b, 102,103,111 organic elements
130 solid state image pickup devices
131 recesses
150 solid state image pickup devices
151 recesses
160 solid state image pickup devices
170 solid state image pickup devices
180 solid state image pickup devices
Claims (23)
1. a solid state image pickup device, comprising:
Effective pixel area in substrate, valid pixel is configured in described effective pixel area;
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region;
The neighboring area of described distribution areas outside; With
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are being sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
2. solid state image pickup device as claimed in claim 1,
The stage portion of wherein said film in described zone line than the center of the width of described zone line closer to described effective pixel area.
3. solid state image pickup device as claimed in claim 1,
The stage portion of wherein said film in described zone line than the center of the width of described zone line closer to described distribution region.
4. solid state image pickup device as claimed in claim 1,
The flat shape of the stage portion of wherein said film in described zone line, the stage portion between described zone line and described distribution region and/or the stage portion between described distribution region and described neighboring area has in rounded shapes or at least one bight of inclined plane shape.
5. solid state image pickup device as claimed in claim 1,
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with.
6. solid state image pickup device as claimed in claim 5,
Wherein said height adjustment element is formed in described adjacent domain in described neighboring area and/or described zone line.
7. solid state image pickup device as claimed in claim 5,
Wherein when the flat shape in described distribution region has at least one gap, described height adjustment element is formed to connect described gap.
8. solid state image pickup device as claimed in claim 5,
Wherein said height adjustment element makes the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
9. solid state image pickup device as claimed in claim 5,
The flat shape of wherein said height adjustment element has in rounded shapes or at least one bight of inclined plane shape.
10. solid state image pickup device as claimed in claim 1,
The recess that wherein depth of section is less than the depth of section of described effective pixel area is formed in having in the region of same cross-sectional height with described effective pixel area in described zone line of described film.
11. solid state image pickup devices as claimed in claim 1,
The recess that wherein depth of section is identical with described effective pixel area is formed in having in the region of same cross-sectional height with described neighboring area in described zone line of described film.
12. solid state image pickup devices as claimed in claim 1, also comprise:
Photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described photomask.
13. 1 kinds of methods manufacturing solid state image pickup device, described solid state image pickup device comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
Said method comprising the steps of:
Make the depth of section of described film in described effective pixel area be less than the depth of section of described film in described distribution region, and make the depth of section of described film in described neighboring area and described film be sandwiched at least being in closer to the depth of section in the part in described distribution region between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region of the zone line between described effective pixel area and described distribution region.
14. 1 kinds of electronic equipments, comprising:
Solid state image pickup device, comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described film in described distribution region, and the depth of section of described film in described neighboring area and described film are at least between the depth of section of described film in described effective pixel area and the depth of section of described film in described distribution region what be sandwiched in the zone line between described effective pixel area and described distribution region closer to the depth of section in the part in described distribution region; With
Process the signal processing circuit of the output signal exported from described solid state image pickup device.
15. 1 kinds of solid state image pickup devices, comprising:
Effective pixel area in substrate, valid pixel is configured in described effective pixel area;
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region;
The neighboring area of described distribution areas outside; With
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region, and
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with.
16. solid state image pickup devices as claimed in claim 15,
Wherein said height adjustment element is formed in described adjacent domain in described neighboring area and/or described effective pixel area.
17. solid state image pickup devices as claimed in claim 15,
Wherein when the flat shape in described distribution region has at least one gap, described height adjustment element is formed to connect described gap.
18. solid state image pickup devices as claimed in claim 15,
Wherein said height adjustment element makes the depth of section of described adjacent domain roughly the same with the depth of section in described distribution region or be more than or equal to the depth of section in described distribution region, and the depth of section making to comprise the region at least described distribution region is greater than the depth of section of described adjacent domain.
19. solid state image pickup devices as claimed in claim 15,
The flat shape of wherein said height adjustment element has in rounded shapes or at least one bight of inclined plane shape.
20. solid state image pickup devices as claimed in claim 15,
The recess that wherein depth of section is less than the depth of section of described effective pixel area is formed in the zone line being sandwiched between described effective pixel area and described distribution region of described film.
21. solid state image pickup devices as claimed in claim 15, also comprise:
Photomask in described effective pixel area, described photomask has the opening of the photoelectric conversion unit corresponding to described each valid pixel,
The depth of section of wherein said film in described effective pixel area is less than the depth of section of described photomask.
22. 1 kinds of methods manufacturing solid state image pickup device, described solid state image pickup device comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
Said method comprising the steps of:
The depth of section of described film in described effective pixel area and described neighboring area is made to be less than the depth of section of described film in described distribution region; With
Form the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region on the membrane with the adjacent domain of described distribution region adjacent.
23. 1 kinds of electronic equipments, comprising:
Solid state image pickup device, comprises
Effective pixel area in substrate, valid pixel is configured in described effective pixel area,
Distribution region around described effective pixel area, electrode or distribution are arranged in described distribution region,
The neighboring area of described distribution areas outside, and
The film formed on the substrate,
The depth of section of wherein said film in described effective pixel area and described neighboring area is less than the depth of section of described film in described distribution region, and
Wherein, on the membrane with the adjacent domain of described distribution region adjacent, the height adjustment element making described adjacent domain have the depth of section roughly the same with described distribution region is formed with; With
Process the signal processing circuit of the output signal exported from described solid state image pickup device.
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| CN201810472907.6A CN108550597B (en) | 2013-03-25 | 2014-03-12 | Imaging device and electronic apparatus |
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| JP2013-062018 | 2013-03-25 | ||
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| JP2013-221094 | 2013-10-24 | ||
| PCT/JP2014/056522 WO2014156657A1 (en) | 2013-03-25 | 2014-03-12 | Solid-state imaging device, production method therefor, and electronic device |
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| CN201810472907.6A Division CN108550597B (en) | 2013-03-25 | 2014-03-12 | Imaging device and electronic apparatus |
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| JP2016012628A (en) | 2014-06-27 | 2016-01-21 | ソニー株式会社 | Solid-state image pick-up device and electronic apparatus |
| CN104867951B (en) * | 2015-04-23 | 2018-05-04 | 豪威科技(上海)有限公司 | A kind of backside-illuminated sensor chip and its manufacture method |
| JP2017183387A (en) | 2016-03-29 | 2017-10-05 | ソニー株式会社 | Circuit board, semiconductor device, imaging device, solid-state imaging element, and method of manufacturing solid-state imaging element, and electronic equipment |
| US11082649B2 (en) * | 2017-06-02 | 2021-08-03 | Sony Semiconductor Solutions Corporation | Solid-state imaging device with pixels having an in-pixel capacitance |
| TW202038456A (en) | 2018-10-26 | 2020-10-16 | 日商索尼半導體解決方案公司 | Solid-state image pickup element, solid-state image pickup element package, and electronic device |
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- 2014-03-12 WO PCT/JP2014/056522 patent/WO2014156657A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| US20160301885A1 (en) | 2016-10-13 |
| WO2014156657A1 (en) | 2014-10-02 |
| TW201444069A (en) | 2014-11-16 |
| CN108550597B (en) | 2022-12-16 |
| US20180167572A1 (en) | 2018-06-14 |
| US9912890B2 (en) | 2018-03-06 |
| CN105027286B (en) | 2018-08-28 |
| US10812746B2 (en) | 2020-10-20 |
| CN108550597A (en) | 2018-09-18 |
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