JPH0450732A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPH0450732A JPH0450732A JP15974590A JP15974590A JPH0450732A JP H0450732 A JPH0450732 A JP H0450732A JP 15974590 A JP15974590 A JP 15974590A JP 15974590 A JP15974590 A JP 15974590A JP H0450732 A JPH0450732 A JP H0450732A
- Authority
- JP
- Japan
- Prior art keywords
- film
- field effect
- pyroelectric
- effect transistor
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 16
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- XKUKSGPZAADMRA-UHFFFAOYSA-N glycyl-glycyl-glycine Natural products NCC(=O)NCC(=O)NCC(O)=O XKUKSGPZAADMRA-UHFFFAOYSA-N 0.000 claims description 4
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 claims description 4
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical group OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000010287 polarization Effects 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 229910052714 tellurium Inorganic materials 0.000 abstract description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、赤外分光装置における小型で使い易い赤外光
検知器及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a small and easy-to-use infrared photodetector in an infrared spectrometer and a method for manufacturing the same.
従来、電界効果トランジスタを利用する赤外光検知器に
関しては、ジャパニーズ・ジャーナル・オブ アプライ
ド・フィジックス２０ （１９８１年）第３１５頁から
第３２０頁において論じられている。Conventionally, infrared photodetectors using field effect transistors have been discussed in Japanese Journal of Applied Physics 20 (1981), pages 315 to 320.
上記従来技術は、焦電体膜にチタン酸鉛を用いていたた
めに感度が低いという問題があった。また、焦電体膜が
電界効果トランジスタのゲート絶縁膜上に直接に形成さ
れていたため、赤外光照射による温度変化のため、電界
効果トランジスタの特性が変化するという点について配
慮がされておらず、焦電体から生ずる信号と電界効果ト
ランジスタの温度変化による信号とを区別することが困
難であるという問題があった。The above-mentioned conventional technology had a problem of low sensitivity because lead titanate was used for the pyroelectric film. Furthermore, since the pyroelectric film was formed directly on the gate insulating film of the field effect transistor, no consideration was given to the fact that the characteristics of the field effect transistor would change due to temperature changes caused by infrared light irradiation. However, there has been a problem in that it is difficult to distinguish between signals generated from the pyroelectric material and signals caused by temperature changes in the field effect transistor.
本発明は高感度の赤外光検知器を提供することを目的と
している。さらに本発明は、電界効果トランジスタの温
度特性に依存せず、焦電体で生ずる信号を高Ｓ／Ｎ比で
検出する赤外光検知器を提供することを目的とする。The present invention aims to provide a highly sensitive infrared photodetector. A further object of the present invention is to provide an infrared photodetector that detects signals generated in a pyroelectric material with a high S/N ratio without depending on the temperature characteristics of a field effect transistor.
上記目的を達成するために、焦電体膜にトリグリシンサ
ルファイド（ＴＧＳ）又は水銀−力トミウムーテルル（
ＭＴＣ）を用いたものである。In order to achieve the above objective, the pyroelectric film was coated with triglycine sulfide (TGS) or mercury-tomium tellurium (
MTC).
また、上記他の目的を達成するためには、焦電体膜を電
界効果トランジスタから分離して形成し、導電体膜で焦
電体膜と電界効果トランジスタを接続したものである。In addition, in order to achieve the other objects mentioned above, the pyroelectric film is formed separately from the field effect transistor, and the pyroelectric film and the field effect transistor are connected by a conductive film.
さらに、焦電体膜と電界効果トランジスタの熱交換を最
小にするために、焦電体膜と電界効果トランジスタの間
のシリコン、ガリウムヒ素などの基板材料を除去したも
のである。Further, in order to minimize heat exchange between the pyroelectric film and the field effect transistor, the substrate material such as silicon or gallium arsenide between the pyroelectric film and the field effect transistor is removed.
焦電体膜上に形成されている第２の導電体電極に赤外光
が照射されると、第２の導電体膜の温度が上昇し、従っ
て焦電体膜の温度が上昇する。焦電体膜の温度が上昇す
ると焦電効果により焦電体膜で分極電荷が変化する。こ
の分極電荷の変化を電界効果トランジスタで検出すると
いう原理である。焦電体膜にＴＧＳ又はＭＣＴを用いる
と小さな温度変化で大きな分極電荷変化を得ることがで
きるので、高感度な赤外光検知器を提供することができ
る。When the second conductive electrode formed on the pyroelectric film is irradiated with infrared light, the temperature of the second conductive film increases, and therefore the temperature of the pyroelectric film increases. When the temperature of the pyroelectric film increases, the polarization charge changes in the pyroelectric film due to the pyroelectric effect. The principle is that this change in polarization charge is detected using a field effect transistor. If TGS or MCT is used for the pyroelectric film, a large polarization charge change can be obtained with a small temperature change, so a highly sensitive infrared photodetector can be provided.
また、焦電体膜と電界効果トランジスタを分離すると、
電界効果トランジスタには赤外光が照射されないので、
電界効果トランジスタの温度変化を低く抑えることがで
き、温度変化による出力の変化、即ちノイズを低減でき
る。焦電体膜と電界効果トランジスタの間のシリコン、
ガリウムヒ素等の基板を除去すると、焦電体膜と電界効
果トランジスタとの間の熱交換を低減でき、従って高い
Ｓ／Ｎ比の信号が得られる。Also, if the pyroelectric film and the field effect transistor are separated,
Since field effect transistors are not irradiated with infrared light,
Temperature changes in the field effect transistor can be suppressed to a low level, and output changes due to temperature changes, that is, noise can be reduced. silicon between the pyroelectric film and the field effect transistor,
Removing the substrate, such as gallium arsenide, can reduce heat exchange between the pyroelectric film and the field effect transistor, thus providing a signal with a high signal-to-noise ratio.
以下、本発明を実施例に基づき説明する。 Hereinafter, the present invention will be explained based on examples.
第１図は本発明の第１の実施例断面図である。FIG. 1 is a sectional view of a first embodiment of the present invention.
シリコン基板１にソース２．ドレイン３を設け、シリコ
ン表面に５ｉＯｚ膜４，５ｉａＮ＋膜５を形成し、該５
ｉｓＮ４膜上に直接に焦電体膜６を積層したものである
。該焦電体膜上のソースとドレインの間に第２の導電体
膜７を設けた。第２の導電体膜は電界効果トランジスタ
のゲート電極となると同時に、赤外光吸収膜としても機
能する。Source 2 on silicon substrate 1. A drain 3 is provided, and a 5iOz film 4 and a 5iaN+ film 5 are formed on the silicon surface.
A pyroelectric film 6 is laminated directly on the isN4 film. A second conductive film 7 was provided between the source and drain on the pyroelectric film. The second conductor film serves as the gate electrode of the field effect transistor and also functions as an infrared light absorbing film.
第２図は本発明の第２の実施例断面図である。FIG. 2 is a sectional view of a second embodiment of the present invention.
本発明の第１の実施例において、Ｓｉ３Ｎ４膜５と焦電
体膜６の間に第１の導電体電極８を設けた。In the first embodiment of the present invention, a first conductive electrode 8 was provided between the Si3N4 film 5 and the pyroelectric film 6.
本実施例では、第１の導電体電極８が電界効果トランジ
スタのゲート電極となり、第２の導電体電極７が赤外吸
収電極として機能する。In this embodiment, the first conductor electrode 8 functions as a gate electrode of a field effect transistor, and the second conductor electrode 7 functions as an infrared absorbing electrode.
第３図は本発明の第３の実施例断面図である。FIG. 3 is a sectional view of a third embodiment of the present invention.
第２の実施例において、焦電体膜６を電界効果トランジ
スタのゲート部と分離して形成したものである。そして
第１の導電体膜８により焦電体膜と電界効果トランジス
タを接続した。この構造により、電界効果トランジスタ
部を赤外光に露出しなくても赤外光の検出が可能なため
、温度変化による電界効果トランジスタの出力変化を低
減することができ、高Ｓ／Ｎ比の信号が得られる。In the second embodiment, the pyroelectric film 6 is formed separately from the gate portion of the field effect transistor. Then, the pyroelectric film and the field effect transistor were connected by the first conductive film 8. With this structure, infrared light can be detected without exposing the field effect transistor section to infrared light, so it is possible to reduce changes in the output of the field effect transistor due to temperature changes, and achieve a high S/N ratio. I get a signal.
第４図は本発明の第４の実施例断面図である。FIG. 4 is a sectional view of a fourth embodiment of the present invention.
第３の実施例において、焦電体膜６が形成されたシリコ
ン基板１０とソース２及びドレイン３が形成されたシリ
コン基板１１とを溝９により分離し、リコン基板１０と
１１をＳコ０２膜４，５ｉａＮ４膜５及び第１の導電体
膜８で接続している。この構造では、赤外光照射により
シリコン基板１ｏが得た熱が、シリコン基板１１に伝わ
るのを防ぎ、電界効果トランジスタの出力電圧を安定化
させ、より高いＳ／Ｎ比の信号を得ることができる。In the third embodiment, a silicon substrate 10 on which a pyroelectric film 6 is formed and a silicon substrate 11 on which a source 2 and a drain 3 are formed are separated by a groove 9, and silicon substrates 10 and 11 are separated by an Sco02 film. They are connected by a 4,5iaN4 film 5 and a first conductor film 8. This structure prevents the heat obtained by the silicon substrate 1o by infrared light irradiation from being transmitted to the silicon substrate 11, stabilizes the output voltage of the field effect transistor, and obtains a signal with a higher S/N ratio. can.
第１の実施例を用いて赤外光に対する応答を測定した。The response to infrared light was measured using the first example.
焦電体膜にはトリグリシンサルファイド（ＴＧＳ）を用
い、高周波スパッタリングにより３０００人の厚さに積
層した。また第２の導電体膜には白金黒を用い１０μｍ
の厚さに形成した。Triglycine sulfide (TGS) was used for the pyroelectric film, and was laminated to a thickness of 3,000 layers by high-frequency sputtering. In addition, the second conductor film is made of platinum black and has a thickness of 10 μm.
It was formed to a thickness of .
この光検知器を第５図に示す回路に接続し、赤外光を断
続的に本発明の光検知器に照射してその応答を記録した
。第５図の測定回路は、定電流源１２により本発明の光
検知器１３のソース２とドレイン３の間の電圧を一定に
保ち、定電流源１４によりトレイン電流を一定とし、定
電圧源１５によりゲート電圧を一定とし、電電体膜で生
ずる電位変化をそのまま出力端子１６に出力する回路で
ある。This photodetector was connected to the circuit shown in FIG. 5, and the photodetector of the present invention was intermittently irradiated with infrared light and its response was recorded. The measurement circuit of FIG. 5 maintains the voltage between the source 2 and drain 3 of the photodetector 13 of the present invention constant by a constant current source 12, keeps the train current constant by a constant current source 14, and maintains the voltage between the source 2 and drain 3 of the photodetector 13 of the present invention constant by a constant current source 14, and constant voltage source 15. This is a circuit that keeps the gate voltage constant and outputs potential changes occurring in the electrically conductive film to the output terminal 16 as they are.
第６図は本発明の光検知器の１０μｍの波長の赤外光に
対する応答を示したものである。応答曲線のＡは本発明
の検知器、Ｂはチタン酸鉛を焦電体としたときの応答で
ある。また図中、ａ、ｂは、赤外光のＯＮ、ＯＦＦを示
している。図より、本発明の光検知器はチタン酸鉛を用
いるものより高感度であることがわかる。FIG. 6 shows the response of the photodetector of the present invention to infrared light having a wavelength of 10 μm. In the response curve, A is the response of the detector of the present invention, and B is the response when lead titanate is used as the pyroelectric material. Further, in the figure, a and b indicate ON and OFF of infrared light. The figure shows that the photodetector of the present invention has higher sensitivity than one using lead titanate.
以上に示したように本発明により、高感度で、高Ｓ／Ｎ
比の赤外光検知器を提供することができる。As shown above, the present invention provides high sensitivity and high S/N
Infrared light detectors with a high ratio can be provided.
本発明の光検知器はトリグリシンサルファイド（ＴＧＳ
）又は水銀−カドミウム−テルル（ＭＣＴ）を焦電体材
料として用いているので、高感度に赤外光を検出できる
。The photodetector of the present invention uses triglycine sulfide (TGS).
) or mercury-cadmium-tellurium (MCT) as the pyroelectric material, infrared light can be detected with high sensitivity.
また、焦電体膜と電界効果トランジスタを分離して形成
しているので、温度変化による電界効果トランジスタの
出力変化を小さく抑えることができ、高いＳ／Ｎ比で焦
電効果に基づく信号を検出することができる。In addition, since the pyroelectric film and the field effect transistor are formed separately, changes in the output of the field effect transistor due to temperature changes can be suppressed to a small level, and signals based on the pyroelectric effect can be detected with a high S/N ratio. can do.
第１図、第２図、第３図、第４図、第５図はそれぞれ、
本発明の第１．第２．第３．第４．第５の実施例を示す
図、第６図は本発明の効果を示した図である。
１・・・シリコン基板、２・・・ソース、３・・・ドレ
イン、４・・・５ｉＯｚ膜、５・・・５ｉａｌ’Ｌａ膜
、６・・・焦電体膜、７・・・第２の導電体電極、８・
・・第１の導電体電極、９・・・溝、１０・・・シリコ
ン基板、１１・・・シリコン基板、１２・・・定電流源
、１３・・・光検知器、１４・・・定電流源、１５・・
・定電圧源、１６・・・出力端子。
第７図
−２：Figures 1, 2, 3, 4 and 5 are respectively
The first aspect of the present invention. Second. Third. 4th. FIG. 6, which is a diagram showing the fifth embodiment, is a diagram showing the effects of the present invention. DESCRIPTION OF SYMBOLS 1...Silicon substrate, 2...Source, 3...Drain, 4...5iOz film, 5...5ial'La film, 6...Pyroelectric film, 7...Second conductor electrode, 8.
...First conductor electrode, 9...Groove, 10...Silicon substrate, 11...Silicon substrate, 12...Constant current source, 13...Photodetector, 14...Constant Current source, 15...
- Constant voltage source, 16...output terminal. Figure 7-2:
Claims (1)
＿２膜又はＳｉＯ＿２膜とＳｉ＿３Ｎ＿４膜から成るゲ
ート絶縁膜上に、直接に又は第１の導電体電極を介して
焦電体膜を積層し、該焦電体膜上に第２の導電体電極を
設けたことを特徴とする光検知器。 ２、該焦電体膜はトリグリシンサルファイド（ＴＧＳ）
、水銀−カドミウム−テルル（Ｈｇ−Ｃｄ−Ｔｅ，ＭＴ
Ｃ）であることを特徴とする請求項第１項記載の光検知
器。 ３、第２の導電体電極はアルミニウム、金、白金、シリ
コン白金黒、金黒などの導電体であることを特徴とする
請求項第１項記載の光検知器。 ４、第１の導電体電極はアルミニウム、シリコン、金、
白金等から成ることを特徴とする請求項第１項記載の光
検知器。 ５、電界効果トランジスタは、単結晶シリコン、アモル
ファスシリコン、ガリウムヒ素を材料として製作される
ことを特徴とする請求項第１項記載の光検知器。 ６、焦電体膜は、第１の導電体膜を設ける場合は必ずし
も電界効果トランジスタのチャネル上に形成する必要は
なく、第１の導電体膜が電界効果トランジスタのゲート
電極と配線導体と兼ね焦電体膜と電界効果トランジスタ
とが第１の導電体膜を介して接続されていることを特徴
とする請求項第１項記載の光検知器。 ７、焦電体膜と電界効果トランジスタの間のシリコン又
はアモルファスシリコン又はガリウムヒ素を除去したこ
とを特徴とする請求項第１項又は第６項記載の光検知器
。[Claims] 1. In an insulated gate field effect transistor, SiO
A pyroelectric film is laminated directly or via a first conductive electrode on a gate insulating film consisting of a _2 film or a SiO_2 film and a Si_3N_4 film, and a second conductive electrode is placed on the pyroelectric film. A photodetector characterized in that: 2. The pyroelectric film is triglycine sulfide (TGS)
, mercury-cadmium-tellurium (Hg-Cd-Te, MT
The photodetector according to claim 1, characterized in that C). 3. The photodetector according to claim 1, wherein the second conductor electrode is a conductor such as aluminum, gold, platinum, silicon platinum black, or gold black. 4. The first conductive electrode is aluminum, silicon, gold,
The photodetector according to claim 1, characterized in that it is made of platinum or the like. 5. The photodetector according to claim 1, wherein the field effect transistor is made of single crystal silicon, amorphous silicon, or gallium arsenide. 6. The pyroelectric film does not necessarily need to be formed on the channel of the field effect transistor when the first conductor film is provided, and the first conductor film also serves as the gate electrode and wiring conductor of the field effect transistor. 2. The photodetector according to claim 1, wherein the pyroelectric film and the field effect transistor are connected via a first conductive film. 7. The photodetector according to claim 1 or 6, wherein silicon, amorphous silicon, or gallium arsenide between the pyroelectric film and the field effect transistor is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15974590A JPH0450732A (en) | 1990-06-20 | 1990-06-20 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15974590A JPH0450732A (en) | 1990-06-20 | 1990-06-20 | Photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0450732A true JPH0450732A (en) | 1992-02-19 |
Family
ID=15700347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15974590A Pending JPH0450732A (en) | 1990-06-20 | 1990-06-20 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0450732A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015108545A (en) * | 2013-12-04 | 2015-06-11 | ソニー株式会社 | Infrared ray detector and detection method thereof, and electronic apparatus |
| CN109786498A (en) * | 2018-12-10 | 2019-05-21 | 华南理工大学 | A kind of infrared detector cell and preparation method thereof based on two-dimensional semiconductor material |
-
1990
- 1990-06-20 JP JP15974590A patent/JPH0450732A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015108545A (en) * | 2013-12-04 | 2015-06-11 | ソニー株式会社 | Infrared ray detector and detection method thereof, and electronic apparatus |
| CN109786498A (en) * | 2018-12-10 | 2019-05-21 | 华南理工大学 | A kind of infrared detector cell and preparation method thereof based on two-dimensional semiconductor material |
| CN109786498B (en) * | 2018-12-10 | 2021-04-06 | 华南理工大学 | Infrared detection element based on two-dimensional semiconductor material and preparation method thereof |
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