JPH0448072A - Backing plate for sputtering target - Google Patents
Backing plate for sputtering targetInfo
- Publication number
- JPH0448072A JPH0448072A JP15400890A JP15400890A JPH0448072A JP H0448072 A JPH0448072 A JP H0448072A JP 15400890 A JP15400890 A JP 15400890A JP 15400890 A JP15400890 A JP 15400890A JP H0448072 A JPH0448072 A JP H0448072A
- Authority
- JP
- Japan
- Prior art keywords
- backing plate
- alloy
- thermal conductivity
- sputtering target
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 238000003483 aging Methods 0.000 claims description 5
- 239000010949 copper Substances 0.000 abstract description 11
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 239000000956 alloy Substances 0.000 abstract description 10
- 229910017813 Cu—Cr Inorganic materials 0.000 abstract description 7
- 239000010935 stainless steel Substances 0.000 abstract description 7
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005291 magnetic effect Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 229910000906 Bronze Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000010974 bronze Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高強度と高熱伝導性とを併せ持つＣｒ−Ｃｕ系
合金を用いたスパッタリングターゲットのバッキングプ
レートに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a backing plate for a sputtering target using a Cr--Cu alloy having both high strength and high thermal conductivity.
一般に、プレーナーマグネトロンスパッタ装置において
は、ターゲットを保持、冷却する目的で１通常、ターゲ
ット背面にボンディングされたバッキングプレートが用
いられる。現在、バッキングプレートとしては、主に銅
、リン青銅、ステンレス鋼が用いられている。Generally, in a planar magnetron sputtering apparatus, a backing plate bonded to the back surface of the target is usually used for the purpose of holding and cooling the target. Currently, backing plates are mainly made of copper, phosphor bronze, and stainless steel.
一般に、バッキングプレートの具備すべき条件として次
の３点が特に重要である。すなわち、（１）高強度・・
・バッキングプレートのターゲツト面はチャンバー内に
あり、真空に引かれ、また背面は冷媒の圧力がかかるた
め、バッキングプレートには３〜５ｋｇｆ／ｃｄ程度の
差圧がかかる。この差圧によるバンキングプレートの反
りが大きくなるとセラミックス系ターゲットにおいては
割れを生じる原因となる。従って、バッキングプレート
には反りが十分小さくなるだけの強度が要求される。Generally, the following three points are particularly important as conditions that a backing plate must meet. In other words, (1) high strength...
- The target surface of the backing plate is inside the chamber and is evacuated, and the back surface is under pressure from the refrigerant, so a differential pressure of about 3 to 5 kgf/cd is applied to the backing plate. If the warping of the banking plate due to this differential pressure becomes large, it will cause cracks in the ceramic target. Therefore, the backing plate is required to have sufficient strength to minimize warping.
（２）高熱伝導性・・・スパッタ時、ターゲット表面は
高温のプラズマでたたかれるため、ターゲットの温度は
上昇する。この時、バッキングプレートの熱伝導性が低
く、冷却が不充分だとターゲットの表面とバッキングプ
レートの間の熱勾配が大きくなり、ボンディング面での
剥離やターゲット割れの原因となる。従って、バッキン
グプレートには高い熱伝導性が要求される。(2) High thermal conductivity: During sputtering, the target surface is hit with high-temperature plasma, so the temperature of the target increases. At this time, if the backing plate has low thermal conductivity and cooling is insufficient, a thermal gradient between the target surface and the backing plate will increase, causing peeling at the bonding surface and cracking of the target. Therefore, the backing plate is required to have high thermal conductivity.
（３）強磁性でないこと・・・プレーナーマグネトロン
スパッタ装置はバッキングプレート後方に置かれた磁石
より発生する磁力線でプラズマをターゲット表面に拘束
してスパッタレートを上げることを特徴とする。従って
、磁石より発生する磁力線がターゲット表面に十分に漏
洩するようバッキングプレートの材質は強磁性でないこ
とが必要である。(3) Not ferromagnetic: Planar magnetron sputtering equipment is characterized by increasing the sputtering rate by constraining plasma to the target surface using magnetic lines of force generated by a magnet placed behind the backing plate. Therefore, the material of the backing plate must not be ferromagnetic so that the lines of magnetic force generated by the magnet can sufficiently leak to the target surface.
しかしながら、従来のバッキングプレー１−の材質は上
記した（１）〜（３）の条件を完全に満足するものでは
ない。すなわち、銅は熱伝導性は良好であるが、機械的
強度が低く、２００℃程度から焼なまりが起こり、機械
的強度が極端に低下するため、リサイクル使用に不適で
ある。ステンレス鋼は機械的強度は高いが、熱伝導性が
良くない。リン青銅は機械的強度、熱伝導性共に銅とス
テンレス鋼の間にあるが、その値は十分でない。However, the material of the conventional backing play 1- does not completely satisfy the conditions (1) to (3) above. That is, although copper has good thermal conductivity, it has low mechanical strength, and annealing occurs at about 200° C., resulting in an extremely low mechanical strength, making it unsuitable for recycling. Stainless steel has high mechanical strength but poor thermal conductivity. Although phosphor bronze has mechanical strength and thermal conductivity that are between those of copper and stainless steel, these values are not sufficient.
本発明は銅に近い熱伝導性を有し、ステンレス鋼に近い
機械的強度を有するスパッタリングターゲットのバッキ
ングプレートを提供することを目的とするものである。An object of the present invention is to provide a backing plate for a sputtering target that has thermal conductivity close to that of copper and mechanical strength close to that of stainless steel.
上記課題を達成するため１本発明者らは析出硬化型銅合
金に着目し、経済性および安全性を考慮してＣｕ−Ｃｒ
系合金を選択して種々検討した結果、本発明をなすに至
った。In order to achieve the above object, the present inventors focused on a precipitation hardening copper alloy, and in consideration of economic efficiency and safety, developed a Cu-Cr alloy.
As a result of selecting a series alloy and conducting various studies, the present invention was completed.
すなわち、本発明はＣｒを０．２〜１．５％含有し、残
部がＣｕおよび不可避不純物よりなるＣｕ−Ｃｒ系合金
を用いたスパッタリングターゲットのバッキングプレー
トおよびこの合金を溶体化処理後、時効硬化されてなる
スパッタリングターゲットのバッキングプレートである
。That is, the present invention provides a backing plate for a sputtering target using a Cu-Cr alloy containing 0.2 to 1.5% Cr, with the remainder consisting of Cu and unavoidable impurities, and a backing plate for a sputtering target that uses a Cu-Cr alloy containing 0.2 to 1.5% Cr, and an age hardening method for this alloy after solution treatment. This is a backing plate for a sputtering target.
一般に、ＣｒのＣｕへの固溶限は１０７６．６℃におけ
る０、７３％が最大である。従って、この近辺のＣｒを
溶体化した後、時効硬化させたものが硬化性が大きい。Generally, the maximum solid solubility limit of Cr in Cu is 0.73% at 1076.6°C. Therefore, after solutionizing Cr in this area, the material that is age-hardened has a high hardenability.
本発明におけるＣｒ含量もこの点を考慮し、０．２〜１
．５％とする。Ｃｒ量が０．２％未満では時効硬化処理
を施しても引張強度が３５ｋｇｆ ／ ｍｍ２よりも小
さくなり、またＣｒ量が１．５％を超えると時効硬化処
理を施しても熱伝導率が０．２ｃａ１／ｃＩ！ｌ−８・
℃以下となり、機械的強度および熱伝導率を共に満足さ
せるという本発明の意図から外れてしまう。Considering this point, the Cr content in the present invention is 0.2 to 1
．． 5%. If the Cr content is less than 0.2%, the tensile strength will be less than 35 kgf/mm2 even after age hardening treatment, and if the Cr content exceeds 1.5%, the thermal conductivity will be 0 even after age hardening treatment. .2ca1/cI! l-8・
℃ or lower, which deviates from the intention of the present invention, which is to satisfy both mechanical strength and thermal conductivity.
本発明における熱処理、すなわち時効硬化処理は通常、
次のようにして行う。The heat treatment in the present invention, that is, the age hardening treatment is usually
Do it as follows.
溶体化処理 ９００℃程度より急冷（冷間加工
圧延、加工率５０％以上）時効
４５０〜５００℃で３０分以上（通常１〜３時間
）
冷間加工 加工率数ｌＯ％→所定寸法上記熱
処理において、溶体化処理後の冷間加工は行わない場合
もある。これら加工および時効の条件は求められる物性
によって変えることは当然である。Solution treatment: Rapid cooling from about 900℃ (cold working, rolling, working rate of 50% or more), aging
Cold working at 450 to 500° C. for 30 minutes or more (usually 1 to 3 hours) Working rate several 10%→predetermined dimension In the above heat treatment, cold working after solution treatment may not be performed. It goes without saying that these processing and aging conditions will vary depending on the desired physical properties.
以下に実施例を示す。Examples are shown below.
本発明で使用するＣｕ−Ｃｒ系合金はＣｒ０．８５％、
残部Ｃｕからなるクロム銅であって、９００℃から水冷
する溶体化処理後、６０％圧延からなる冷間加工を施し
、次いで４５０℃×３時間の時効処理を施したものの物
性を、銅（無酸素銅）、リン青銅（８％リン青銅）、ス
テンレスｎ４（ＳＵ Ｓ ３０４）の従来公知のバッキ
ングプレート材料の物性と比較した。その結果を第１表
に示す。The Cu-Cr alloy used in the present invention has 0.85% Cr,
The physical properties of chromium copper, the balance of which is Cu, were solution treated by water cooling from 900°C, cold worked by 60% rolling, and then aged at 450°C for 3 hours. The physical properties of conventional backing plate materials such as oxygen copper), phosphor bronze (8% phosphor bronze), and stainless steel N4 (SU S 304) were compared. The results are shown in Table 1.
第］−表より、本発明に係るクロム銅は無酸素銅の８０
％の熱伝導率を有しながらステンレス鋼と同程度の引張
強さを示すことがわかる。また、本発明のクロム銅はＣ
ｒ ： ０．２〜１．５％の組成範囲において１時効析
出させることにより３５ｋｇｆ／Ｃｍ”以上の引張強さ
を実現させることができる。[No.]-Table, the chromium copper according to the present invention is 80% of the oxygen-free copper.
It can be seen that it exhibits a tensile strength comparable to that of stainless steel while having a thermal conductivity of 1.5%. Further, the chromium copper of the present invention is C
r: A tensile strength of 35 kgf/Cm'' or more can be achieved by one aging precipitation in a composition range of 0.2 to 1.5%.
次に、上記の各材料を用いてバッキングプレートを製作
し、実際にスパッタを行った。その結果を第２表に示す
、なお、第２表中、○印は正常にスパッタが行われたも
の、Ｘ印はターゲットに割れが発生したものを示す。Next, a backing plate was manufactured using each of the above materials, and sputtering was actually performed. The results are shown in Table 2. In Table 2, ◯ marks indicate that sputtering was performed normally, and X marks indicate that cracks occurred in the target.
とができる。また、今後、ターゲットおよびバッキング
プレートが大型化されるに当り、バッキングプレートを
薄く軽くできることは、ハンドリングの点からも有利で
ある。I can do it. Furthermore, as targets and backing plates become larger in the future, being able to make the backing plate thinner and lighter is advantageous from the viewpoint of handling.
以上のようにＣｕ−Ｃｒ系合金を用いることにより、高
強度と高熱伝導率を併せ持ったバッキングプレートを製
作することができる。By using the Cu-Cr alloy as described above, a backing plate that has both high strength and high thermal conductivity can be manufactured.
Claims (2)
不可避不純物よりなるスパッタリングターゲットのバッ
キングプレート。1. A backing plate for a sputtering target containing 0.2 to 1.5% Cr, with the remainder consisting of Cu and unavoidable impurities.
バッキングプレート。2. The backing plate according to claim 1, which is subjected to age hardening after solution treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15400890A JPH0448072A (en) | 1990-06-14 | 1990-06-14 | Backing plate for sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15400890A JPH0448072A (en) | 1990-06-14 | 1990-06-14 | Backing plate for sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448072A true JPH0448072A (en) | 1992-02-18 |
Family
ID=15574895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15400890A Pending JPH0448072A (en) | 1990-06-14 | 1990-06-14 | Backing plate for sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448072A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001000899A1 (en) * | 1997-10-27 | 2001-01-04 | Japan Energy Corporation | Sputtering target backing plate and sputtering target/backing plate assembly |
| WO2003106733A1 (en) * | 2002-06-14 | 2003-12-24 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
| WO2011062002A1 (en) * | 2009-11-20 | 2011-05-26 | Jx日鉱日石金属株式会社 | (sputtering target)-(bucking plate) joint body, and process for production thereof |
| US20130220805A1 (en) * | 2010-10-27 | 2013-08-29 | Jx Nippon Mining & Metals Corporation | Sputtering Target-Backing Plate Assembly and Method for Producing Same |
-
1990
- 1990-06-14 JP JP15400890A patent/JPH0448072A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001000899A1 (en) * | 1997-10-27 | 2001-01-04 | Japan Energy Corporation | Sputtering target backing plate and sputtering target/backing plate assembly |
| WO2003106733A1 (en) * | 2002-06-14 | 2003-12-24 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
| WO2011062002A1 (en) * | 2009-11-20 | 2011-05-26 | Jx日鉱日石金属株式会社 | (sputtering target)-(bucking plate) joint body, and process for production thereof |
| JP5175976B2 (en) * | 2009-11-20 | 2013-04-03 | Ｊｘ日鉱日石金属株式会社 | Sputtering target-backing plate assembly and manufacturing method thereof |
| US9062371B2 (en) | 2009-11-20 | 2015-06-23 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly, and its production method |
| US20130220805A1 (en) * | 2010-10-27 | 2013-08-29 | Jx Nippon Mining & Metals Corporation | Sputtering Target-Backing Plate Assembly and Method for Producing Same |
| US10006117B2 (en) * | 2010-10-27 | 2018-06-26 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly and method for producing same |
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