JPH0444691B2 - - Google Patents
Info
- Publication number
- JPH0444691B2 JPH0444691B2 JP57209687A JP20968782A JPH0444691B2 JP H0444691 B2 JPH0444691 B2 JP H0444691B2 JP 57209687 A JP57209687 A JP 57209687A JP 20968782 A JP20968782 A JP 20968782A JP H0444691 B2 JPH0444691 B2 JP H0444691B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- catalyst layer
- sensitive body
- gas sensitive
- catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003054 catalyst Substances 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910000510 noble metal Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 36
- 230000035945 sensitivity Effects 0.000 description 10
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018879 Pt—Pd Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- -1 Zno Substances 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Description
〔発明の技術分野〕
本発明はガス検出素子の改良に関する。
〔発明の技術的背景とその問題点〕
従来、主に大気中の還元性ガスの検出には
SnO2,Zno,Fe2O3などのn型半導体に属する金
属酸化物半導体を主構成部材とするガス検知素子
が用いられている。こうしたガス検知素子の金属
酸化物半導体は還元性ガスが接触すると、正イオ
ン吸着がなされるため、その電気伝導度が増大
し、抵抗値が低下する。また、酸化性ガスが接触
すると、負イオン吸着がなされるため、逆に金属
酸化物半導体の電気伝導度が低下し、抵抗値は増
大する。しかしながら、一般的には金属酸化物半
導体のみでは感度が低く、ガス検知素子として必
ずしも充分満足するものではなかつた。
このようなことから、最近、金属酸化物半導体
にPt,Pd等の貴金属触媒を添加したり、該半導
体以上に貴金属をAl2O3等の担体で担持した触媒
層を被覆したりすることによつて、感度の向上化
を図ることが試みられている。しかしながら、こ
れらのガス検知素子は耐湿性の点で問題があつ
た。特に、90%以上の高湿中においては、低抵抗
化現象が生じたり、或いは長期間高湿中に曝すと
ガス感度特性が著しく劣化したりする場合があ
る。高湿度下での使用において問題があつた。
〔発明の目的〕
本発明は高感度性はもとより、耐湿性の優れた
ガス検知素子を提供することを目的とするもので
ある。
〔発明の概要〕
本発明は一対の対向電極及びヒータを設けた絶
縁基板又は絶縁管上に金属酸化物半導体からなる
ガス感応体を設け、この表面にPt,Pd,Rh,Ir,
Ruから選ばれた少なくとも1種以上の貴金属を
含むAl2O3,SiO2,ZrO2から選ばれた少なくとも
1種以上の絶縁材料からなる第1触媒層を設け、
更にこの第1触媒層上にAgを含む同絶縁材料か
らなる第2触媒層を設けることによつて、前記第
1触媒層によりガス感度が向上され、かつ前記第
2触媒層中のAgによる水分との反応により、水
分がその下の第1触媒層に拡散するのを阻止し、
ひいては高感度性を保持しつつ耐湿性の向上化が
なされたガス検知素子を得ることを骨子とする。
上記第1触媒中の貴金属の含有量は0.05〜40wt
%の範囲にすることが望ましい。この理由は貴金
属の含有量が0.05wt%未満にすると、十分な感度
向上が期待できず、かといつてその含有量が40wt
%を越えると、素子の感度向上に寄与しないう
え、初期の経時変化が大きくなる。
上記第2触媒中のAg含有量は0.05〜20wt%にす
ることが望ましい。この理由はAgの含有量を
0.05wt%未満にすると、耐湿効果が十分達成され
ず、かといつてその量が20wt%を越えると、添加
効果が現れず、むしろガス感度が減少する。
また、上記ガス感応体の厚さは0.2μm〜1μm、
各触媒層の厚さは10〜50μm程度にすることが望
ましい。
〔発明の実施例〕
次に、本発明の実施例を図面を参照して説明す
る。
実施例 1
まず、オクチル酸スズを所定量秤量し、n−ブ
タノールに溶解して10wt%のオクチル酸スズ溶液
を調製した。つづいて、この溶液を第1図に示す
如く一対の対向電極11,12を形成した絶縁管2
の外周面に塗布し、空気中で約30分間乾燥した
後、約120℃で30分間乾燥してn−ブタノールを
蒸発させた。ひきつづき、400〜700℃で30分間焼
成してSnO2薄膜からなる厚さ0.5μmの筒状ガス
感応体3を作製した。この場合、急熱急冷が好ま
しい。また、膜厚を制御するためには塗布、焼成
の工程を1〜4回繰り返すことが望ましい。
次いで、塩化白金酸水溶液にAl2O3粉末を所定
量加えて充分に混合した後、1〜2時間減圧乾燥
し、更に約100℃で充分に乾燥した。つづいて、
この乾燥物を粉体化し、石英ルツボ等を用いて
400〜800℃で焼成してPtを1wt%含む触媒を調製
した。ひきつづき、この触媒を前記ガス感応体3
の外周面に塗布し、約300〜400℃で焼成して厚さ
20μmの筒状第1触媒層4を作製した。
次いで、硝酸銀水溶液にAl2O3粉末を所定量加
えて充分混合した後、上記触媒と同様な手順によ
りAgを10wt%含む触媒を調製した。つづいて、
この触媒を前記第1触媒層4に塗布した後、約
300〜400℃で焼成して厚さ30μmの筒状第2触媒
層5を作製して素子本体6を造つた(同第1図図
示)。
次いで、6本の端子7…が貫通支持された絶縁
板8上に第1図図示の素子本体6を載置し、該本
体6の絶縁管2内にヒータコイル9を挿通させ、
該コイル9の両端を前記端子7…のうちの2本に
夫々接続した。つづいて、前記素子本体6の一対
の対向電極11,12に夫々2本のリード線10…
を接続し、それらの他端を残りの端子7…に接続
してガス検知素子を組立てた(第2図図示)。
実施例 2〜12
第1触媒層としてPd,Rh,Ir,Pt−Pd,Pd−
Rh,Ir−Pt,Pt−Pd−Rh,Pd−Rh−Ir,Ir−
Pt−Pd,Pt−Pd−Rh−Irを夫々1wt%含むAl2O3
からなるものを用いた以外、実施例1と同様な工
程により11種のガス検知素子を組立てた。
しかして、前記実施例1〜12のガス検知素子に
ついてCOガス200ppm中での初期抵抗値及び40
℃,90%RHの同COガス中で1000時間放置後の
抵抗値を調べた。その結果を下記第1表に示す。
なお、参照例として第1触媒層のみからなるガス
検知素子の初期抵抗値及び40℃,90%RH中で
1000時間放置後の抵抗値を下記第1表に併記し
た。
[Technical Field of the Invention] The present invention relates to improvements in gas detection elements. [Technical background of the invention and its problems] Conventionally, mainly for detecting reducing gases in the atmosphere,
BACKGROUND OF THE INVENTION Gas detection elements whose main constituents are metal oxide semiconductors belonging to n-type semiconductors such as SnO 2 , Zno, and Fe 2 O 3 are used. When the metal oxide semiconductor of such a gas sensing element comes into contact with a reducing gas, positive ions are adsorbed, so its electrical conductivity increases and its resistance value decreases. Further, when an oxidizing gas comes into contact with the metal oxide semiconductor, negative ions are adsorbed, so that the electrical conductivity of the metal oxide semiconductor decreases and the resistance value increases. However, metal oxide semiconductors alone generally have low sensitivity and are not always fully satisfactory as gas detection elements. For these reasons, recently, efforts have been made to add noble metal catalysts such as Pt and Pd to metal oxide semiconductors, and to cover the semiconductors with catalyst layers that support noble metals on carriers such as Al 2 O 3 . Therefore, attempts have been made to improve the sensitivity. However, these gas sensing elements have had problems in terms of moisture resistance. In particular, in high humidity of 90% or more, a phenomenon of low resistance may occur, or if exposed to high humidity for a long period of time, gas sensitivity characteristics may deteriorate significantly. There were problems when using it under high humidity. [Object of the Invention] It is an object of the present invention to provide a gas sensing element that has not only high sensitivity but also excellent moisture resistance. [Summary of the invention] The present invention provides a gas sensitive body made of a metal oxide semiconductor on an insulating substrate or an insulating tube provided with a pair of opposing electrodes and a heater, and on the surface of the gas sensitive body, Pt, Pd, Rh, Ir,
providing a first catalyst layer made of at least one insulating material selected from Al 2 O 3 , SiO 2 , ZrO 2 containing at least one noble metal selected from Ru;
Further, by providing a second catalyst layer made of the same insulating material containing Ag on the first catalyst layer, gas sensitivity is improved by the first catalyst layer, and moisture due to Ag in the second catalyst layer is improved. The reaction with the catalyst prevents moisture from diffusing into the first catalyst layer below,
The goal is to obtain a gas sensing element that has improved moisture resistance while maintaining high sensitivity. The content of noble metal in the first catalyst is 0.05 to 40 wt.
It is desirable to set it in the range of %. The reason for this is that if the precious metal content is less than 0.05 wt %, sufficient sensitivity improvement cannot be expected;
If it exceeds %, it does not contribute to improving the sensitivity of the element, and the initial change over time increases. The Ag content in the second catalyst is preferably 0.05 to 20 wt %. The reason for this is that the Ag content
If the amount is less than 0.05 wt %, the moisture resistance effect will not be sufficiently achieved, while if the amount exceeds 20 wt %, the added effect will not be apparent and the gas sensitivity will rather decrease. In addition, the thickness of the above gas sensitive body is 0.2 μm to 1 μm,
The thickness of each catalyst layer is preferably about 10 to 50 μm. [Embodiments of the Invention] Next, embodiments of the present invention will be described with reference to the drawings. Example 1 First, a predetermined amount of tin octylate was weighed and dissolved in n-butanol to prepare a 10 wt % tin octylate solution. Next, this solution was applied to an insulating tube 2 in which a pair of opposing electrodes 1 1 and 1 2 were formed as shown in FIG.
It was applied to the outer circumferential surface of the container, dried in air for about 30 minutes, and then dried at about 120° C. for 30 minutes to evaporate the n-butanol. Subsequently, it was fired at 400 to 700°C for 30 minutes to produce a 0.5 μm thick cylindrical gas sensitive body 3 made of a SnO 2 thin film. In this case, rapid heating and cooling is preferred. Further, in order to control the film thickness, it is desirable to repeat the coating and baking steps 1 to 4 times. Next, a predetermined amount of Al 2 O 3 powder was added to the chloroplatinic acid aqueous solution and thoroughly mixed, followed by drying under reduced pressure for 1 to 2 hours, and then thoroughly drying at about 100°C. Continuing,
This dried material is powdered and used in a quartz crucible etc.
A catalyst containing 1 wt % Pt was prepared by calcining at 400-800°C. Subsequently, this catalyst is added to the gas sensitive body 3.
Coat it on the outer circumferential surface of the
A 20 μm cylindrical first catalyst layer 4 was produced. Next, a predetermined amount of Al 2 O 3 powder was added to the silver nitrate aqueous solution and thoroughly mixed, and then a catalyst containing 10 wt % Ag was prepared in the same manner as the above catalyst. Continuing,
After applying this catalyst to the first catalyst layer 4, approximately
A cylindrical second catalyst layer 5 having a thickness of 30 μm was prepared by firing at 300 to 400° C., and an element body 6 was manufactured (as shown in FIG. 1). Next, the element main body 6 shown in FIG. 1 is placed on the insulating plate 8 through which the six terminals 7 are supported, and the heater coil 9 is inserted into the insulating tube 2 of the main body 6 .
Both ends of the coil 9 were connected to two of the terminals 7, respectively. Next, two lead wires 10 are connected to the pair of opposing electrodes 1 1 and 1 2 of the element body 6 , respectively.
and connected their other ends to the remaining terminals 7... to assemble the gas detection element (as shown in Figure 2). Examples 2 to 12 Pd, Rh, Ir, Pt-Pd, Pd- as the first catalyst layer
Rh, Ir−Pt, Pt−Pd−Rh, Pd−Rh−Ir, Ir−
Al 2 O 3 containing 1 wt % each of Pt-Pd and Pt-Pd-Rh-Ir
Eleven types of gas sensing elements were assembled using the same steps as in Example 1, except that the elements consisting of the following were used. Therefore, for the gas detection elements of Examples 1 to 12, the initial resistance value in 200 ppm CO gas and 40
The resistance value was examined after being left in the same CO gas at 90% RH for 1000 hours. The results are shown in Table 1 below.
In addition, as a reference example, the initial resistance value of a gas detection element consisting only of the first catalyst layer and the temperature at 40℃ and 90%RH
The resistance values after being left for 1000 hours are also listed in Table 1 below.
【表】【table】
【表】
上記第1表から明らかな如く、本発明のガス検
知素子は高湿下で長期間放置後においても初期抵
抗値とほとんど変わらず、優れた耐湿性を有する
ことがわかる。
実施例 13〜24
実施例1と同様なガス感応体を一対の電極を有
する7L×4W×0.3tmmのAl2O3基板上に設け、この
ガス感応体上に実施例1〜12と同組成の第1触媒
層をスパツタ法により形成し、更に第1触媒層上
にAgを1wt%含むAl2O3からなる第2触媒層をス
パツタ法により設け、更に前記Al2O2基板の裏面
にヒータを形成して12種のガス検知素子を組立て
た。
しかして、前期実施例13〜24のガス検知素子に
ついてCOガス200ppm中での初期抵抗値及び40
℃,90%RHの同COガス中で1000時間放置後の
抵抗値を調べた。その結果を下記第2表に示す。
なお、参照例として実施例13〜24の第1触媒層の
みをスパツタ法により形成したガス検知素子を同
第2表に併記した。[Table] As is clear from Table 1 above, the gas sensing element of the present invention has excellent moisture resistance, with almost no change in resistance from the initial resistance even after being left in high humidity for a long period of time. Examples 13 to 24 A gas sensitive body similar to that of Example 1 was provided on a 7 L × 4 W × 0.3 t mm Al 2 O 3 substrate having a pair of electrodes, and Examples 1 to 12 were placed on this gas sensitive body. A first catalyst layer having the same composition as that of Al 2 O 2 is formed by a sputtering method, and a second catalyst layer made of Al 2 O 3 containing 1 wt % of Ag is provided on the first catalyst layer by a sputtering method . Twelve types of gas detection elements were assembled by forming heaters on the back side of the substrate. Therefore, for the gas detection elements of Examples 13 to 24, the initial resistance value and 40
The resistance value was examined after being left in the same CO gas at 90% RH for 1000 hours. The results are shown in Table 2 below.
As reference examples, gas sensing elements of Examples 13 to 24 in which only the first catalyst layer was formed by sputtering are also listed in Table 2.
【表】【table】
以上詳述した如く、本発明によれば高感度性と
耐湿性とを備えた長期間安定したガス検出を行な
うことができるガス検知素子を提供できる。
As described in detail above, according to the present invention, it is possible to provide a gas detection element that has high sensitivity and moisture resistance and can perform stable gas detection over a long period of time.
第1図はガス検知素子に用いられる素子本体を
示す断面図、第2図は本発明の一実施例を示すガ
ス検知素子の斜視図である。
11,12……対向電極、2……絶縁管、3……
ガス感応体、4……第1触媒層、5……第2触媒
層、6……素子本体、8……絶縁板、9……ヒー
タコイル。
FIG. 1 is a sectional view showing an element body used in a gas sensing element, and FIG. 2 is a perspective view of a gas sensing element showing an embodiment of the present invention. 1 1 , 1 2 ... Counter electrode, 2 ... Insulation tube, 3 ...
Gas sensitive body, 4...first catalyst layer, 5...second catalyst layer, 6 ...element body, 8...insulating plate, 9...heater coil.
Claims (1)
る金属酸化物半導体からなるガス感応体、該ガス
感応体の抵抗を検出するための一対の電極、及び
該ガス感応体を主に加熱するヒータを設け、かつ
前記ガス感応体上に触媒層を設けた構造のガス検
出素子においてPt,Pd,Rh,Ir,Ruから選ばれ
た少なくとも1種以上の貴金属を含むAl2O3,
SiO2,ZrO2から選ばれた少なくとも1種以上の
絶縁材料からなる第1触媒層を前記ガス感応体上
に設け、更に該第1触媒層上にAgを含むAl2O3,
SiO2,ZrO2から選ばれた少なくとも1種以上の
絶縁材料からなる第2触媒層を設けたことを特徴
とするガス検知素子。1. A gas sensitive body made of a metal oxide semiconductor whose resistance value changes when it comes into contact with gas on an insulating substrate, a pair of electrodes for detecting the resistance of the gas sensitive body, and a gas sensitive body that mainly heats the gas sensitive body. Al 2 O 3 containing at least one noble metal selected from Pt, Pd, Rh, Ir, and Ru in a gas detection element having a structure in which a heater is provided and a catalyst layer is provided on the gas sensitive body;
A first catalyst layer made of at least one insulating material selected from SiO 2 , ZrO 2 is provided on the gas sensitive body, and Al 2 O 3 containing Ag,
A gas sensing element comprising a second catalyst layer made of at least one insulating material selected from SiO 2 and ZrO 2 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20968782A JPS5999343A (en) | 1982-11-30 | 1982-11-30 | Gas detecting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20968782A JPS5999343A (en) | 1982-11-30 | 1982-11-30 | Gas detecting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5999343A JPS5999343A (en) | 1984-06-08 |
JPH0444691B2 true JPH0444691B2 (en) | 1992-07-22 |
Family
ID=16576957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20968782A Granted JPS5999343A (en) | 1982-11-30 | 1982-11-30 | Gas detecting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5999343A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2980290B2 (en) * | 1991-03-08 | 1999-11-22 | フィガロ技研株式会社 | Gas detection method and gas sensor used therefor |
JP3091776B2 (en) * | 1991-08-07 | 2000-09-25 | 大阪瓦斯株式会社 | Gas sensor |
JPH09269306A (en) * | 1996-04-02 | 1997-10-14 | New Cosmos Electric Corp | Heat ray type semiconductor gas detection element and gas detector |
JPH11142356A (en) * | 1997-11-07 | 1999-05-28 | Fis Kk | Semiconductor gas sensor |
JP7057629B2 (en) * | 2016-09-21 | 2022-04-20 | 大阪瓦斯株式会社 | Gas sensor and gas detector |
JP6925146B2 (en) * | 2016-09-21 | 2021-08-25 | 大阪瓦斯株式会社 | Gas sensor and gas detector |
JP7038472B2 (en) * | 2016-09-21 | 2022-03-18 | 大阪瓦斯株式会社 | Gas sensor and gas detector |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134697A (en) * | 1978-04-12 | 1979-10-19 | Toshiba Corp | Gas sensitive element |
JPS5578236A (en) * | 1978-12-08 | 1980-06-12 | Matsushita Electric Works Ltd | Gas detection element |
JPS5594153A (en) * | 1979-01-11 | 1980-07-17 | Fuigaro Giken Kk | Methane gas detector |
-
1982
- 1982-11-30 JP JP20968782A patent/JPS5999343A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134697A (en) * | 1978-04-12 | 1979-10-19 | Toshiba Corp | Gas sensitive element |
JPS5578236A (en) * | 1978-12-08 | 1980-06-12 | Matsushita Electric Works Ltd | Gas detection element |
JPS5594153A (en) * | 1979-01-11 | 1980-07-17 | Fuigaro Giken Kk | Methane gas detector |
Also Published As
Publication number | Publication date |
---|---|
JPS5999343A (en) | 1984-06-08 |
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