JPH0444433B2 - - Google Patents

Info

Publication number
JPH0444433B2
JPH0444433B2 JP59016859A JP1685984A JPH0444433B2 JP H0444433 B2 JPH0444433 B2 JP H0444433B2 JP 59016859 A JP59016859 A JP 59016859A JP 1685984 A JP1685984 A JP 1685984A JP H0444433 B2 JPH0444433 B2 JP H0444433B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion region
regions
light
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59016859A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60160673A (ja
Inventor
Toshiaki Yokoo
Takashi Shibuya
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59016859A priority Critical patent/JPS60160673A/ja
Publication of JPS60160673A publication Critical patent/JPS60160673A/ja
Publication of JPH0444433B2 publication Critical patent/JPH0444433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59016859A 1984-01-31 1984-01-31 光起電力装置 Granted JPS60160673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016859A JPS60160673A (ja) 1984-01-31 1984-01-31 光起電力装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016859A JPS60160673A (ja) 1984-01-31 1984-01-31 光起電力装置

Publications (2)

Publication Number Publication Date
JPS60160673A JPS60160673A (ja) 1985-08-22
JPH0444433B2 true JPH0444433B2 (OSRAM) 1992-07-21

Family

ID=11927939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016859A Granted JPS60160673A (ja) 1984-01-31 1984-01-31 光起電力装置

Country Status (1)

Country Link
JP (1) JPS60160673A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS64348U (OSRAM) * 1987-06-19 1989-01-05
EP2375455B1 (en) 2010-04-09 2019-01-09 Saint-Augustin Canada Electric Inc. Voltage matched multijunction solar cell
CN102956650A (zh) * 2011-08-26 2013-03-06 刘莹 一种新型叠层薄膜太阳能电池

Also Published As

Publication number Publication date
JPS60160673A (ja) 1985-08-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term