JPH0442816B2 - - Google Patents

Info

Publication number
JPH0442816B2
JPH0442816B2 JP59271952A JP27195284A JPH0442816B2 JP H0442816 B2 JPH0442816 B2 JP H0442816B2 JP 59271952 A JP59271952 A JP 59271952A JP 27195284 A JP27195284 A JP 27195284A JP H0442816 B2 JPH0442816 B2 JP H0442816B2
Authority
JP
Japan
Prior art keywords
light
illuminance
correction plate
light source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59271952A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61150331A (ja
Inventor
Ryoichi Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP59271952A priority Critical patent/JPS61150331A/ja
Publication of JPS61150331A publication Critical patent/JPS61150331A/ja
Publication of JPH0442816B2 publication Critical patent/JPH0442816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59271952A 1984-12-25 1984-12-25 露光装置用照度補正板の製造方法 Granted JPS61150331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59271952A JPS61150331A (ja) 1984-12-25 1984-12-25 露光装置用照度補正板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59271952A JPS61150331A (ja) 1984-12-25 1984-12-25 露光装置用照度補正板の製造方法

Publications (2)

Publication Number Publication Date
JPS61150331A JPS61150331A (ja) 1986-07-09
JPH0442816B2 true JPH0442816B2 (https=) 1992-07-14

Family

ID=17507096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59271952A Granted JPS61150331A (ja) 1984-12-25 1984-12-25 露光装置用照度補正板の製造方法

Country Status (1)

Country Link
JP (1) JPS61150331A (https=)

Also Published As

Publication number Publication date
JPS61150331A (ja) 1986-07-09

Similar Documents

Publication Publication Date Title
US6534242B2 (en) Multiple exposure device formation
EP0293643B1 (en) Lithographic process having improved image quality
US5523193A (en) Method and apparatus for patterning and imaging member
US5245470A (en) Polarizing exposure apparatus using a polarizer and method for fabrication of a polarizing mask by using a polarizing exposure apparatus
EP0713142A2 (en) Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
CA2116805C (en) Mask and method for manufacturing the same
US5935736A (en) Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
US5503959A (en) Lithographic technique for patterning a semiconductor device
EP0921418B2 (en) Diffractive optical element and optical system having the same
JPH1041223A (ja) 露光方法および露光装置
US6303276B1 (en) Method and apparatus for making optical master surface diffusers suitable for producing large format optical components
TW200525305A (en) Apparatus for and method of forming optical images and process for manufacturing a device using this method
US5764342A (en) Method and system for controlling the relative size of images formed in light-sensitive media
US6150058A (en) Method of making attenuating phase-shifting mask using different exposure doses
EP0938031B1 (en) A process for integrated circuit device fabrication using a variable transmission aperture
US7006295B2 (en) Illumination system and method for efficiently illuminating a pattern generator
JPH03252659A (ja) フォトマスク及びその製造方法
JPH10254122A (ja) 露光用フォトマスク
JPH0442816B2 (https=)
JPS61150330A (ja) 露光装置用照度補正板
JP2001296646A (ja) フォトマスク、フォトマスクの製造方法、露光方法及び露光装置
JP2503696B2 (ja) 投影露光装置
JPH10275769A (ja) 露光方法
US6440614B1 (en) Mask and method of manufacturing semiconductor device
KR0146399B1 (ko) 반도체 패턴 형성 방법