JPH0438517Y2 - - Google Patents

Info

Publication number
JPH0438517Y2
JPH0438517Y2 JP1982034401U JP3440182U JPH0438517Y2 JP H0438517 Y2 JPH0438517 Y2 JP H0438517Y2 JP 1982034401 U JP1982034401 U JP 1982034401U JP 3440182 U JP3440182 U JP 3440182U JP H0438517 Y2 JPH0438517 Y2 JP H0438517Y2
Authority
JP
Japan
Prior art keywords
epitaxial
solution
carbon boat
growth
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982034401U
Other languages
English (en)
Japanese (ja)
Other versions
JPS58138330U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3440182U priority Critical patent/JPS58138330U/ja
Publication of JPS58138330U publication Critical patent/JPS58138330U/ja
Application granted granted Critical
Publication of JPH0438517Y2 publication Critical patent/JPH0438517Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3440182U 1982-03-11 1982-03-11 液相エピタキシヤル成長装置 Granted JPS58138330U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3440182U JPS58138330U (ja) 1982-03-11 1982-03-11 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3440182U JPS58138330U (ja) 1982-03-11 1982-03-11 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS58138330U JPS58138330U (ja) 1983-09-17
JPH0438517Y2 true JPH0438517Y2 (en, 2012) 1992-09-09

Family

ID=30045884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3440182U Granted JPS58138330U (ja) 1982-03-11 1982-03-11 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS58138330U (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961531U (ja) * 1982-10-19 1984-04-23 三洋電機株式会社 液相エピタキシヤル成長装置
JPH0517878Y2 (en, 2012) * 1985-05-13 1993-05-13

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792598A (en) * 1980-11-26 1982-06-09 Fujitsu Ltd Unit for liquid-phase epitaxial growth

Also Published As

Publication number Publication date
JPS58138330U (ja) 1983-09-17

Similar Documents

Publication Publication Date Title
JPH0438517Y2 (en, 2012)
JPH0445238Y2 (en, 2012)
JPS63186775U (en, 2012)
JPH0543109Y2 (en, 2012)
DE2334811C2 (de) Verfahren zur Herstellung von CdCr tief 2 Se tief 4 Einkristallen
JPH0523583Y2 (en, 2012)
JPS63167175U (en, 2012)
JPS61108131A (ja) 結晶成長方法
JPS58110491A (ja) 液相エピタキシヤル成長法
JP2507709Y2 (ja) 液相結晶成長装置
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JP3515858B2 (ja) 液相エピタキシャル成長用ボート
JPH04735U (en, 2012)
JPS5895815A (ja) 積層構造を有する半導体装置の製造方法
JPS6123010Y2 (en, 2012)
JPS61220422A (ja) 液相成長装置及びそれを用いた液相成長方法
JPH0247435B2 (ja) Gaasekisoepitakisharuseichoho
JPS599912A (ja) 液相結晶成長法
JPS61280613A (ja) 液相エピタキシヤル成長方法
JPH0165867U (en, 2012)
JPH0281425A (ja) 結晶成長方法
JPS5710922A (en) Sliding type liquid phase epitaxial growth device
JPS6311596A (ja) 多元化合物半導体の二相融液法による液相エピタキシヤル成長法
JPH04321593A (ja) 液相エピタキシャル成長方法
JPH0763058B2 (ja) メルトのベ−キング方法および液相エピタキシヤル成長法