JPH0437066A - Light source integrated type image sensor - Google Patents
Light source integrated type image sensorInfo
- Publication number
- JPH0437066A JPH0437066A JP2141299A JP14129990A JPH0437066A JP H0437066 A JPH0437066 A JP H0437066A JP 2141299 A JP2141299 A JP 2141299A JP 14129990 A JP14129990 A JP 14129990A JP H0437066 A JPH0437066 A JP H0437066A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- image sensor
- emitting element
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 239000002184 metal Substances 0.000 abstract description 18
- 125000006850 spacer group Chemical group 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Facsimile Scanning Arrangements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はファクシミリやイメージスキャナ等に用いられ
る画像読取装置に係り、特に装置の小型化を図るために
発光素子とイメージセンサとを一体化した光源一体型イ
メージセンサに関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to an image reading device used in facsimiles, image scanners, etc., and in particular, in order to reduce the size of the device, a light emitting element and an image sensor are integrated. The present invention relates to an image sensor integrated with a light source.
（従来の技術）
近年、画像読取装置の小型化を図るために、蛍光灯の代
わりにエレクトロルミネッセンス（ＥＬ発光）素子など
の固体光源を使用し、発光素子と受光素子とを一体化し
て形成された光源一体型イメージセンサが提案されてい
る。(Prior Art) In recent years, in order to miniaturize image reading devices, solid-state light sources such as electroluminescent (EL light emitting) elements are used instead of fluorescent lamps, and the light emitting elements and light receiving elements are integrated. An image sensor with an integrated light source has been proposed.
この種の画像読取装置では、例えば第７図及び第８図に
示すように、ＥＬ発光素子１０と、多数の受光素子３０
をライン状に配設したイメージセンサ２０とを接着剤４
０を介して接合して構成されている。This type of image reading device includes an EL light emitting element 10 and a large number of light receiving elements 30, as shown in FIGS. 7 and 8, for example.
An image sensor 20 arranged in a line and an adhesive 4
They are connected via 0.
ＥＬ発光素子１０は、厚さ５０〜数１００μｍの透明の
ガラス等から成る透明基板１１上に透明電極１２．誘電
体層１３９発光層１４．誘電体層１５、金属電極１６を
順次積層して形成されている。The EL light-emitting element 10 has a transparent electrode 12 . Dielectric layer 139 Light emitting layer 14. It is formed by sequentially laminating a dielectric layer 15 and a metal electrode 16.
透明電極１２は、ｒＴＯ，Ｉｎ２Ｏ，、ＳｎＯ３等を０
．１μｍの膜厚に着膜して帯状に形成されている。誘電
体層１３は、ＳｉＮｘ、ＳｉＯ。The transparent electrode 12 contains 0 rTO, In2O, SnO3, etc.
．． The film is deposited to a thickness of 1 μm and is formed into a band shape. The dielectric layer 13 is made of SiNx or SiO.
等をスパッタやＣＶＤ法により着膜し、前記透明電極１
２を覆い隠すように帯状に形成されている。etc. by sputtering or CVD method to form the transparent electrode 1.
It is formed into a band shape so as to cover the 2nd part.
発光層１４は、誘電体層１３上にＺｎＳ：Ｍｎ。The light emitting layer 14 is made of ZnS:Mn on the dielectric layer 13.
ＺｎＳ：ＴｂＦ、等をＥＢ無蒸着スパッタ法により着膜
して帯状に形成されている。誘電体層１５は、前記誘電
体層１３と同様に、ＳｉＮｘ、５ｉＯ１等をスパッタや
ＣＶＤ法により着膜し、前記発光層１４及び前記誘電体
層１３を覆うように帯状に形成されている。金属電極１
６は、アルミニウム等の不透明な金属をスパッタや蒸着
法により着膜して帯状に形成されている。金属電極１６
には、受光素子３０上に対向するように方形状の開口部
１７が形成されている。この開口部１７は、金属電極１
６をフォトリソ法によりエツチングして形成する。A film of ZnS:TbF, etc. is deposited by an EB non-evaporation sputtering method to form a strip. Like the dielectric layer 13, the dielectric layer 15 is formed by depositing SiNx, 5iO1, etc. by sputtering or CVD, and is formed into a band shape so as to cover the light emitting layer 14 and the dielectric layer 13. Metal electrode 1
6 is formed into a band shape by depositing an opaque metal such as aluminum by sputtering or vapor deposition. Metal electrode 16
A rectangular opening 17 is formed so as to face above the light receiving element 30 . This opening 17 is connected to the metal electrode 1
6 is formed by etching by photolithography.
イメージセンサ２０は、絶縁基板２１上にドツト分離型
に形成した多数の個別電極２２．光電変換層２３．共通
電極２４を順次積層し、多数の受光素子３０をライン状
に配設している。The image sensor 20 includes a large number of individual electrodes 22. formed in a dot-separated manner on an insulating substrate 21. Photoelectric conversion layer 23. Common electrodes 24 are sequentially laminated, and a large number of light receiving elements 30 are arranged in a line.
個別電極２２は、クロム（Ｃｒ）の着膜を行ないフォト
リソ法によりエツチングしてクロムパターンを形成して
いる。光電変換層２３は、アモルファスシリコン（ａ−
８ｔ）をプラズマＣＶＤ法により着膜し、前記個別電極
２２を覆うような帯状に形成されている。共通電極２４
は、酸化インジウム・スズＣＩＴＯ）をスパッタ法によ
り着膜し、前記個別電極２２を覆うような帯状に形成さ
れている。光電変換層２３を個別電極２２と共通電極２
４とで挾んだ部分がサンドイッチ構造の各受光素子３０
を構成している。The individual electrodes 22 are formed by depositing a chromium (Cr) film and etching it by photolithography to form a chromium pattern. The photoelectric conversion layer 23 is made of amorphous silicon (a-
8t) is deposited as a film by plasma CVD method, and is formed into a band shape so as to cover the individual electrodes 22. Common electrode 24
A film of indium tin oxide (CITO) is deposited by a sputtering method, and is formed into a band shape so as to cover the individual electrodes 22 . The photoelectric conversion layer 23 is connected to the individual electrode 22 and the common electrode 2.
The portion sandwiched between 4 and 4 is each light receiving element 30 having a sandwich structure.
It consists of
以上の構成により、ＥＬ発光素子１０の透明電極１２と
金属電極１６のコネクタ端子０−０′間に交流電圧を印
加すると、電極間に挟まれた発光層１４から光が放射さ
れ、透明基板１１上に配置された原稿面５０で反射し、
反射光６０が前記開口部１７を透過して各受光素子３０
に入射する。With the above configuration, when an AC voltage is applied between the transparent electrode 12 of the EL light emitting element 10 and the connector terminals 0-0' of the metal electrode 16, light is emitted from the light emitting layer 14 sandwiched between the electrodes, and the transparent substrate 11 reflected by the original surface 50 placed above,
The reflected light 60 passes through the opening 17 and reaches each light receiving element 30.
incident on .
各受光素子３０ては光の入射量に応じて電荷が発生し、
この電荷による電位変化をＩＣチップ（図示せず）によ
り時系列的に抽出するようになっている。Charge is generated in each light receiving element 30 according to the amount of incident light,
Potential changes due to this charge are extracted in time series by an IC chip (not shown).
（発明が解決しようとする課題）
上記構造によると、ＥＬ発光素子を発光させる交流電源
を供給するためのコネクタ端子Ｏ−０′は透明基板１１
側に形成されている。透明基板１１は発光層１４に対し
て原稿面５０側に位置しているので、透明基板１１を厚
くすると光路長が長くなり発光光の利用効率が悪化する
ので薄くする必要がある。しかしながら、透明基板１１
を薄くすると外部配線に接続されるコネクタ端子として
十分な強度を確保することができないという問題点があ
った。(Problem to be Solved by the Invention) According to the above structure, the connector terminal O-0' for supplying AC power for causing the EL light emitting element to emit light is connected to the transparent substrate 11.
formed on the side. Since the transparent substrate 11 is located on the side of the document surface 50 with respect to the light-emitting layer 14, if the transparent substrate 11 is made thicker, the optical path length becomes longer and the utilization efficiency of the emitted light deteriorates, so it is necessary to make it thinner. However, the transparent substrate 11
If it is made thinner, there is a problem in that it is not possible to ensure sufficient strength as a connector terminal connected to external wiring.
本発明は上記実情に鑑みてなされたもので、発光素子と
受光素子とを一体化した画像読取装置において、ＥＬ発
光素子の電源供給のためのコネクタ端子の強度を十分確
保することができる構造を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides a structure that can ensure sufficient strength of the connector terminal for supplying power to the EL light emitting element in an image reading device that integrates a light emitting element and a light receiving element. The purpose is to provide.
（課題を解決するための手段）
上記従来例の問題点を解決するため本発明は、発光層を
２つの電極で挾んで透明基板上に形成したＥＬ発光素子
と、多数の受光素子を絶縁基板上に配置したイメージセ
ンサとを具備し、前記ＥＬ発光素子とイメージセンサと
を対向して構成される光源一体型イメージセンサにおい
て、次の構成を特徴としている。(Means for Solving the Problems) In order to solve the problems of the conventional example described above, the present invention provides an EL light emitting element formed on a transparent substrate with a light emitting layer sandwiched between two electrodes, and a large number of light receiving elements formed on an insulating substrate. A light source-integrated image sensor is provided with an image sensor disposed above, and is configured such that the EL light emitting element and the image sensor face each other, and is characterized by the following configuration.
ＥＬ発光素子の２つの電極にそれぞれ引き出し部を形成
する。A lead-out portion is formed in each of the two electrodes of the EL light emitting element.
ＥＬ発光素子の２つの電極間に交流電圧を印加するため
の電源供給配線を前記絶縁基板上に形成する。A power supply wiring for applying an alternating voltage between two electrodes of the EL light emitting element is formed on the insulating substrate.
この電源供給配線と前記各引き出し部とを導電性接着剤
を介して電気的に接続する。This power supply wiring and each of the lead-out portions are electrically connected via a conductive adhesive.
（作用）
本発明によれば、ＥＬ発光素子の電極の引き出し部を導
電性接着剤を介して電源供給配線に接続するように構成
するので、電源供給配線を絶縁基板上に形成することに
より電源供給配線のコネクタ端子を絶縁基板側に形成す
ることができる。(Function) According to the present invention, since the lead-out portion of the electrode of the EL light emitting element is configured to be connected to the power supply wiring via the conductive adhesive, the power supply wiring is formed on the insulating substrate. The connector terminal of the supply wiring can be formed on the insulating substrate side.
（実施例）
本発明の一実施例について図面を参照しながら説明する
。(Example) An example of the present invention will be described with reference to the drawings.
第１図及び第２図は実施例に係る光源一体型イメージセ
ンサの断面説明図及び平面説明図であり、第３図及び第
４図はＥＬ発光素子及びイメージセンサ単体の平面説明
図である。図中、第７図及び第８図と同様の構成をとる
部分については同一符号を付している。FIGS. 1 and 2 are a cross-sectional view and a plan view of an image sensor integrated with a light source according to an embodiment, and FIGS. 3 and 4 are plan views of an EL light emitting element and an image sensor alone. In the figure, parts having the same configuration as in FIGS. 7 and 8 are designated by the same reference numerals.
本実施例の光源一体型イメージセンサは、ＥＬ発光素子
１０と、イメージセンサ２０とが相対向するように接着
剤４０を介して接合して構成されている。The light source integrated image sensor of this embodiment is constructed by bonding an EL light emitting element 10 and an image sensor 20 with an adhesive 40 so as to face each other.
透明基板１１上に帯状に積層され、ＥＬ発光素子１０の
構成要素となる透明電極１２及び金属電極１６には、第
３図に示すように、その両端部において互いに重なり合
わないように、引き出し部１２ａ、１２ａ、１６ｇ、１
６ａを形成している。As shown in FIG. 3, the transparent electrode 12 and the metal electrode 16, which are laminated in a strip shape on the transparent substrate 11 and are the constituent elements of the EL light emitting device 10, have lead-out portions at both ends so that they do not overlap each other. 12a, 12a, 16g, 1
6a.
絶縁基板２１上には、アレイ状に配置した受光素子３０
が配設されるとともに、受光素子３０の個別電極から引
き出し電極２２ａが引き出され、その端部はボンディン
グワイヤ（図示せず）を介してＩＣチップ２５にそれぞ
れ接続されている。On the insulating substrate 21, light receiving elements 30 are arranged in an array.
At the same time, lead-out electrodes 22a are drawn out from the individual electrodes of the light-receiving element 30, and their ends are respectively connected to the IC chip 25 via bonding wires (not shown).
ＩＣチップ２５の灰受光素子３０側の絶縁基板２１には
、ＩＣチップ２５を駆動するための信号を供給する制御
配線２６か絶縁層（図示せず）を介した多層配線構造に
より形成されている。また、この制御配線２６に外部よ
り信号を供給するためのコネクタ部２７を前記絶縁基板
２１上の中央部分側部に設けている。On the insulating substrate 21 on the gray light receiving element 30 side of the IC chip 25, a control wiring 26 for supplying signals for driving the IC chip 25 is formed with a multilayer wiring structure via an insulating layer (not shown). . Further, a connector section 27 for supplying signals to the control wiring 26 from the outside is provided on the side of the central portion of the insulating substrate 21.
そして、前記受光素子３０．ＩＣチップ２５及び制御配
線２６の外側に、受光素子アレイの両端部側から引き出
し電極２２ａ及び制御配線２６に沿って、前記金属電極
１６に接続されるべき低電圧側配線７１．７２を形成し
ている。更に低電圧側配線７１．７２の外側に、低電圧
側配線７１゜７２に沿って透明電極１２に接続されるべ
き高電圧側配線７３．７４を形成している。低電圧側配
線７１．７２の端子０′及び高電圧側配線７３゜７４の
端子０はコネクタ部２７近傍に位置させるとともに、他
端側には、前記透明電極１２の引き出し部１２ａ、１２
ａに対応するように、バッド７３ａ、７４ｇを形成し、
金属電極１６の引き出し部１６ａ、１６ａに対応するよ
うに、バッド７１、ａ、７２ａを形成している。そして
、端子Ｏ−０′に外部より交流電圧が供給される。本実
施例ではシート抵抗による電圧降下の影響を少なくする
ため、透明電極１２及び金属電極１６の両端から電圧が
供給されるように透明電極１２及び金属電極１６の両端
側に引き出し部１２ａ、１６ａを形成している。The light receiving element 30. Low voltage side wirings 71 and 72 to be connected to the metal electrode 16 are formed outside the IC chip 25 and the control wiring 26 from both ends of the light receiving element array along the extraction electrode 22a and the control wiring 26. There is. Furthermore, high voltage side wirings 73 and 74 to be connected to the transparent electrode 12 are formed along the low voltage side wirings 71 and 72 on the outside of the low voltage side wirings 71 and 72. The terminals 0' of the low-voltage side wiring 71, 72 and the terminals 0 of the high-voltage side wiring 73, 74 are located near the connector part 27, and the other end side has the lead-out parts 12a, 12 of the transparent electrode 12.
Form the pads 73a and 74g to correspond to a,
Buds 71, a, 72a are formed to correspond to the lead-out portions 16a, 16a of the metal electrode 16. Then, an AC voltage is supplied to the terminal O-0' from the outside. In this embodiment, in order to reduce the influence of voltage drop due to sheet resistance, lead portions 12a and 16a are provided at both ends of the transparent electrode 12 and metal electrode 16 so that voltage is supplied from both ends of the transparent electrode 12 and metal electrode 16. is forming.
ＥＬ発光素子１０とイメージセンサ２０とは、各受光素
子３０と、ＥＬ発光素子１０の開口部１７との位置が合
うように絶縁性の接着剤４０を介して接合する。この接
着剤４０には、数１０ ｔｔ ｍの直径の球状の透明ス
ペーサ４１が混入されており、透明基板１１と絶縁基板
２１との間隔が一定となるように接合できるようになっ
ている。また、前記引き出し部１６ａ、１６ａ、１２ａ
、１２ａとバッド７１ａ、７２ａ、７３ａ、７４ｇとは
、銀系の球状のスペーサ８１を含んだ導電性接着剤８０
を介してそれぞれ電気的に接続するように構成している
。The EL light emitting element 10 and the image sensor 20 are bonded via an insulating adhesive 40 such that each light receiving element 30 and the opening 17 of the EL light emitting element 10 are aligned. This adhesive 40 contains a spherical transparent spacer 41 with a diameter of several tens of ttm, so that the transparent substrate 11 and the insulating substrate 21 can be bonded so that the distance between them is constant. Further, the drawer portions 16a, 16a, 12a
, 12a and the pads 71a, 72a, 73a, 74g are conductive adhesives 80 containing silver-based spherical spacers 81.
They are configured to be electrically connected to each other via.
１つのＩＣチップ２５によって駆動される受光素子３０
（６４若しくは１２８ビツト）の等価回路を示すと第
５図のようになり、金属電極１６の端子０′は受光素子
３０の接地線９０に、透明電極１２の端子ＯはＥＬ駆動
電源９１に接続されている。Light receiving element 30 driven by one IC chip 25
(64 or 128 bits) is shown in FIG. 5, where the terminal 0' of the metal electrode 16 is connected to the ground line 90 of the light receiving element 30, and the terminal O of the transparent electrode 12 is connected to the EL drive power source 91. has been done.
透明電極１２と金属電極１６との間（端子Ｏと端子０′
間）に±２００Ｖの両極性パルスを印加させると、透明
電極１２と金属電極１６とで挟まれた発光層１４から光
が発光する（第８図参照）。Between the transparent electrode 12 and the metal electrode 16 (terminal O and terminal 0'
When a bipolar pulse of ±200 V is applied between the two electrodes (between 1 and 2), light is emitted from the light emitting layer 14 sandwiched between the transparent electrode 12 and the metal electrode 16 (see FIG. 8).
発光層１４から放射した光は、透明基板１１上に配置さ
れた原稿面５０を照射し、原稿の濃淡に応じた反射光６
０が開口部１７から受光素子３０上に入射する。一つの
受光素子に着目すると、受光素子３０．（第５図）に流
れる光電流により発生した電荷が個別電極２２の配線容
量を等価的に表したコンデンサＣ５に一時的に蓄積され
、ボルテージフォロワー型増幅器Ａ、の入力線の電圧が
変化する。この電圧をシフトレジスタＲにより順次開閉
されるアナログスイッチＳ、より順次出力線Ｔ ｏｕｔ
へ抽出させて時系列信号とする。信号検出後、ボルテー
ジフォロワー型増幅器Ａ、の入力線はスイッチに１によ
り接地されて残留電荷を放出し、電荷のリセットを行な
う。The light emitted from the light emitting layer 14 illuminates the document surface 50 placed on the transparent substrate 11, and reflects light 6 according to the density of the document.
0 enters the light receiving element 30 from the opening 17. Focusing on one light receiving element, light receiving element 30. Charges generated by the photocurrent flowing in (FIG. 5) are temporarily accumulated in the capacitor C5, which equivalently represents the wiring capacitance of the individual electrode 22, and the voltage of the input line of the voltage follower type amplifier A changes. This voltage is transferred to an analog switch S which is sequentially opened and closed by a shift register R, and then to an output line T out.
It is extracted as a time-series signal. After the signal is detected, the input line of the voltage follower type amplifier A is grounded by a switch 1 to discharge the residual charge and reset the charge.
以上の動作が繰り返し行われて、アナログスイッチＳ、
、 Ｓ、 、 −・−８ｎ （ｎは６４または１２８
）の開閉によって光電変換信号が出力線Ｔ ｏｕｔに順
次時系列的に抽出され、原稿の１ラインの画像信号を得
る。The above operations are repeated, and the analog switch S,
, S, , -・-8n (n is 64 or 128
), the photoelectric conversion signals are sequentially extracted to the output line T out in a time-series manner to obtain an image signal for one line of the document.
本実施例によれば、ＥＬ発光素子に電源を供給するため
の低電圧側配線７１．７２及び高電圧側配線７３．７４
を絶縁基板２１上に形成することにより電源供給配線の
コネクタ端子０，０′を厚さに制限のない絶縁基板２１
側に形成でき、コネクタ端子の強度を十分に確保するこ
とができるまた本実施例によれば、イメージセンサの受
光素子の引き出し配線２２ａ群を取り囲むように、ＥＬ
発光素子１０の電源供給のための低電圧側配線７１．７
２を配置し、その外側に高電圧側配線７３．７４を配置
し、前記低電圧側配線７１，７２は接地されているので
、上述したように各受光素子３０の信号を読み取る際、
ＥＬ発光素子を駆動するための高電圧信号により両端側
の受光素子３０が影響を受けることを少なくしている。According to this embodiment, the low voltage side wiring 71.72 and the high voltage side wiring 73.74 for supplying power to the EL light emitting element.
By forming the connector terminals 0 and 0' of the power supply wiring on the insulating substrate 21, the thickness of the connector terminals 0 and 0' is not limited.
In addition, according to this embodiment, an EL layer can be formed on the side of the connector terminal to ensure sufficient strength of the connector terminal.
Low voltage side wiring 71.7 for power supply to the light emitting element 10
2 is placed, high voltage side wirings 73 and 74 are placed on the outside thereof, and the low voltage side wirings 71 and 72 are grounded, so when reading the signal of each light receiving element 30 as described above,
The light receiving elements 30 on both ends are less affected by the high voltage signal for driving the EL light emitting element.
従って、両端側の受光素子３０において、受光素子３０
から抽出される電気信号に高電圧信号印加によるノイズ
を与えず、画像情報を正確に読み取ることができ、Ｓ／
Ｎ比の向上を図ることができる。Therefore, in the light receiving elements 30 on both end sides, the light receiving elements 30
The image information can be read accurately without adding noise due to the application of high voltage signals to the electrical signals extracted from the S/
It is possible to improve the N ratio.
第４図は本発明の他の実施例を示すもので、第２図と同
一構成をとる部分については同一符号を付している。FIG. 4 shows another embodiment of the present invention, in which parts having the same configuration as in FIG. 2 are given the same reference numerals.
本実施例では金属電極１６の両端にそれぞれ引き出し部
１６ａ、１６ｂを設け、この引き出し部１５ａ、１６ｂ
間に透明電極１２の引き出し部１２ａが位置している。In this embodiment, lead-out portions 16a and 16b are provided at both ends of the metal electrode 16, respectively, and the lead-out portions 15a and 16b are
A drawn-out portion 12a of the transparent electrode 12 is located in between.
そして、絶縁基板２１上のは、高電圧側配線７３．７４
に沿ってその外側に低電圧側配線７５．７６を形成する
。低電圧側配線７５．７６の端子０′はコネクタ部２７
近傍に位置させるとともに、他端側には、金属電極１６
の引き出し部１６ｂ、１６ｂに対応するように、バッド
７５ａ、７６ａを形成している。そして、端子Ｏ−０′
に外部より交流電圧が供給される。And, on the insulating substrate 21, high voltage side wiring 73.74
Low-voltage side wiring 75 and 76 are formed along and outside of it. Terminal 0' of low voltage side wiring 75, 76 is connected to connector part 27
A metal electrode 16 is located nearby and on the other end side.
Buds 75a and 76a are formed to correspond to the pull-out portions 16b and 16b. And terminal O-0'
AC voltage is supplied from outside.
本実施例によれば、ＥＬ発光素子の電源供給のための高
電圧側配線７３．７４を、それぞれ低電圧側配線７１．
７５及び７２．７６で挾むように構成したので、第２図
の実施例に加えて、イメージセンサに近接して配置され
る他の電子部品や信号配線等にＥＬ発光素子を駆動する
ための高電圧信号の影響を及はさないという効果がある
。According to this embodiment, the high voltage side wirings 73 and 74 for power supply to the EL light emitting elements are connected to the low voltage side wirings 71 and 74, respectively.
75, 72, and 76, in addition to the embodiment shown in FIG. This has the effect of not affecting the signal.
（発明の効果）
上述したように本発明によれば、ＥＬ発光素子の電極の
引き出し部を導電性接着剤を介して電源供給配線に接続
するように構成するので、電源供給配線を絶縁基板上に
形成することにより電源供給配線のコネクタ端子を絶縁
基板側に形成でき、コネクタ端子の強度を十分に確保す
ることができる。(Effects of the Invention) As described above, according to the present invention, the lead portion of the electrode of the EL light emitting element is configured to be connected to the power supply wiring through the conductive adhesive, so that the power supply wiring is connected to the insulating substrate. By forming the connector terminals, the connector terminals of the power supply wiring can be formed on the insulating substrate side, and the strength of the connector terminals can be ensured sufficiently.
第１図は本発明の光源一体型イメージセンサの断面説明
図、第２図は同上の平面説明図、第３図はＥＬ発光素子
の平面説明図、第４図はイメージセンサの平面説明図、
第５図は光源一体型イメージセンサの簡易等価回路図、
第６図は光源一体型イメージセンサの他の実施例を示す
平面説明図、第７図は従来の光源一体型イメージセンサ
の一部平面説明図、第８図は第７図の■−■′断面説明
図である。
０・・・・・・ＥＬ発光素子
１・・・・・・透明基板
２・・・・・・透明電極
４・・・・・・発光層
６・・・・・・金属電極
７・・・・・・開口部
０・・・・・・イメージセンサ
０・・・・・・受光素子
０・・・・・・接着剤
１２ａ、１６ａ、１６ｂ・・・・・・引き出し部７１．
７２・・・・・・低電圧側配線
７３．７４・・・・・・高電圧側配線
８０・・・・・・導電性接着剤
第５FIG. 1 is a cross-sectional explanatory diagram of a light source integrated image sensor of the present invention, FIG. 2 is a plan explanatory diagram of the same as above, FIG. 3 is a plane explanatory diagram of an EL light emitting element, and FIG. 4 is a plan explanatory diagram of the image sensor.
Figure 5 is a simplified equivalent circuit diagram of an image sensor with integrated light source.
FIG. 6 is an explanatory plan view showing another embodiment of the image sensor with integrated light source, FIG. 7 is an explanatory plan view of a part of the conventional image sensor with integrated light source, and FIG. It is a cross-sectional explanatory view. 0...EL light emitting element 1...Transparent substrate 2...Transparent electrode 4...Light emitting layer 6...Metal electrode 7... . . . Opening 0 . . . Image sensor 0 . . . Light receiving element 0 . . . Adhesives 12a, 16a, 16b .
72...Low voltage side wiring 73.74...High voltage side wiring 80...Conductive adhesive No. 5
Claims (1)
Ｌ発光素子と、多数の受光素子を絶縁基板上に配置した
イメージセンサとを具備し、前記ＥＬ発光素子とイメー
ジセンサとを対向して構成される光源一体型イメージセ
ンサにおいて、 前記ＥＬ発光素子の２つの電極にそれぞれ引き出し部を
形成し、 ＥＬ発光素子の２つの電極間に交流電圧を印加するため
の電源供給配線を前記絶縁基板上に形成し、 該電源供給配線と前記各引き出し部とを導電性接着剤を
介して電気的に接続することを特徴とする光源一体型イ
メージセンサ。[Claims] E formed on a transparent substrate with a light emitting layer sandwiched between two electrodes.
A light source integrated image sensor comprising an L light emitting element and an image sensor having a large number of light receiving elements disposed on an insulating substrate, the EL light emitting element and the image sensor facing each other; A lead-out portion is formed on each of the two electrodes, a power supply wiring for applying an alternating current voltage between the two electrodes of the EL light emitting element is formed on the insulating substrate, and the power supply wiring and each of the lead-out portions are connected to each other. An image sensor with an integrated light source that is electrically connected via a conductive adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141299A JPH0437066A (en) | 1990-06-01 | 1990-06-01 | Light source integrated type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141299A JPH0437066A (en) | 1990-06-01 | 1990-06-01 | Light source integrated type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0437066A true JPH0437066A (en) | 1992-02-07 |
Family
ID=15288655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2141299A Pending JPH0437066A (en) | 1990-06-01 | 1990-06-01 | Light source integrated type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0437066A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007226A1 (en) * | 2000-07-18 | 2002-01-24 | Nippon Sheet Glass Co., Ltd. | Photodetector array |
| JP2004260798A (en) * | 2003-02-07 | 2004-09-16 | Matsushita Electric Ind Co Ltd | Information reading element and information reading device using the same |
-
1990
- 1990-06-01 JP JP2141299A patent/JPH0437066A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007226A1 (en) * | 2000-07-18 | 2002-01-24 | Nippon Sheet Glass Co., Ltd. | Photodetector array |
| US6828541B2 (en) | 2000-07-18 | 2004-12-07 | Nippon Sheet Glass Co., Ltd. | Light receiving element array having isolated pin photodiodes |
| JP2004260798A (en) * | 2003-02-07 | 2004-09-16 | Matsushita Electric Ind Co Ltd | Information reading element and information reading device using the same |
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