JPH0437039B2 - - Google Patents

Info

Publication number
JPH0437039B2
JPH0437039B2 JP235884A JP235884A JPH0437039B2 JP H0437039 B2 JPH0437039 B2 JP H0437039B2 JP 235884 A JP235884 A JP 235884A JP 235884 A JP235884 A JP 235884A JP H0437039 B2 JPH0437039 B2 JP H0437039B2
Authority
JP
Japan
Prior art keywords
plane
seed crystal
crystal
seed
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP235884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145989A (ja
Inventor
Toshihiko Ibuka
Tooru Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Polytec Co, Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Polytec Co
Priority to JP235884A priority Critical patent/JPS60145989A/ja
Publication of JPS60145989A publication Critical patent/JPS60145989A/ja
Publication of JPH0437039B2 publication Critical patent/JPH0437039B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP235884A 1984-01-10 1984-01-10 種結晶 Granted JPS60145989A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP235884A JPS60145989A (ja) 1984-01-10 1984-01-10 種結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP235884A JPS60145989A (ja) 1984-01-10 1984-01-10 種結晶

Publications (2)

Publication Number Publication Date
JPS60145989A JPS60145989A (ja) 1985-08-01
JPH0437039B2 true JPH0437039B2 (de) 1992-06-18

Family

ID=11527039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP235884A Granted JPS60145989A (ja) 1984-01-10 1984-01-10 種結晶

Country Status (1)

Country Link
JP (1) JPS60145989A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2617870B1 (fr) * 1987-07-09 1989-10-27 Labo Electronique Physique Procede de realisation de plaquettes-substrats orientees, a partir de lingots massifs semi-conducteurs du groupe iii-v
JP4154731B2 (ja) * 2004-04-27 2008-09-24 信越半導体株式会社 発光素子の製造方法及び発光素子

Also Published As

Publication number Publication date
JPS60145989A (ja) 1985-08-01

Similar Documents

Publication Publication Date Title
EP0967036A3 (de) Gerichtet erstarrtes Gussteil und Herstellungsverfahren
JPH0437039B2 (de)
JPS6034027Y2 (ja) シ−ドホルダ−
Zemskov Special features of solidification of alloyed single crystals of indium antimonide in zero gravity conditions
JP2940779B2 (ja) 単結晶の製造方法
KR890002975A (ko) 방향성 기판 제조방법
JP3980136B2 (ja) 単結晶製造装置及び単結晶製造方法
JPS59174594A (ja) 種結晶保持装置
JPS57129899A (en) Manufacture of single crystal of 3-5 group compound semiconductor
Teter et al. Anisotropic magnetostriction in Tb sub (0. 27) Dy sub (0. 73) Fe sub (1. 95).
Daunay et al. Application of Etch Patterns to the Study of Twinning in ZnSe Single Crystals
Ma et al. Growth habits of alexandrite crystal.
Jin et al. Anisotropic growth of LiNbO3 crystal as revealed by high temperature in situ observation
JP2985022B2 (ja) 磁気光学素子及び光アイソレータ
Budimir Synthesis of BISCO monocrystal (2212) and measurements of some transport properties
JP3135355B2 (ja) 化合物半導体単結晶の製造方法及び製造装置
JPH09295887A (ja) 結晶の育成方法及び育成用ルツボ
JPH0380184A (ja) 結晶育成方法
JPS629333Y2 (de)
KR100198241B1 (ko) Litao3 단결정의 정방위 결정방법
JP2023180323A (ja) パレット
JPS62119191A (ja) 半導体結晶製造方法
Patel et al. Gel growth of lead sulfate single crystals
JP3009790B2 (ja) 種子水晶の保持装置
Lu Silicon bicrystal growth

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term