JPH04369888A - Semiconductor laser module - Google Patents

Semiconductor laser module

Info

Publication number
JPH04369888A
JPH04369888A JP14717291A JP14717291A JPH04369888A JP H04369888 A JPH04369888 A JP H04369888A JP 14717291 A JP14717291 A JP 14717291A JP 14717291 A JP14717291 A JP 14717291A JP H04369888 A JPH04369888 A JP H04369888A
Authority
JP
Japan
Prior art keywords
semiconductor laser
light
transmission
laser module
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14717291A
Other languages
Japanese (ja)
Inventor
Yasushi Matsui
松井 康
Masato Ishino
正人 石野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14717291A priority Critical patent/JPH04369888A/en
Publication of JPH04369888A publication Critical patent/JPH04369888A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a semiconductor laser module which is stable in transmission characteristics even if light is reflected at the joint surface of a fiber connector. CONSTITUTION:Directly modulated light 12 emitted from a semiconductor laser 1 is concentrated by an optical lens 2 and possessed of single polarization characteristics retaining its plane of polarization. Light 13 passing through an optical isolator 3 is rotated in plane of polarization by arm angle of 45 deg. but has single polarization characteristics. Then, light, 14 passing through a depolarization plate 4 is random-polarized. Even if random-polarized transmission light is multiply reflected, it hardly interferes with each other, so that a semiconductor laser module of this design excellent in transmission characteristics can be realized.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、光ファイバ通信に必要
な高性能な半導体レーザモジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high performance semiconductor laser module necessary for optical fiber communication.

【0002】0002

【従来の技術】半導体レーザモジュールとしては、大き
く分けて、図2のレセプタクル型のものと、図3のピッ
グテール型のものがある。以下それぞれの構成と機能に
ついて簡単に説明する。図2において、21は半導体レ
ーザチップ、22はセルフォックレンズ、23は集束ビ
ーム光、24はレーザマウント、25はモニタホトダイ
オード、26はパッケージ、またレーザ光を取り出すた
めのものとして27は光ファイバコネクタプラグ、28
はフェルール、29は伝送用光ファイバである。このよ
うに構成されたレセプタクル型モジュールには、レーザ
光取り出し用光ファイバコネクタプラグ27としてFC
型のものが一般に使われている。
2. Description of the Related Art Semiconductor laser modules can be roughly divided into a receptacle type as shown in FIG. 2 and a pigtail type as shown in FIG. The configuration and functions of each will be briefly explained below. In FIG. 2, 21 is a semiconductor laser chip, 22 is a SELFOC lens, 23 is a focused beam, 24 is a laser mount, 25 is a monitor photodiode, 26 is a package, and 27 is an optical fiber connector for extracting the laser beam. Plug, 28
is a ferrule, and 29 is a transmission optical fiber. The receptacle type module configured in this way has an FC as an optical fiber connector plug 27 for extracting laser light.
Types are commonly used.

【0003】次に図3において、31は半導体レーザチ
ップ、32はレンズ、33は集束ビーム光、34はモニ
タホトダイオード、35はサーミスタ、36はペルチェ
クーラ、37はパッケージ、38はフェルール、39は
出力用光ファイバ、40は光ファイバコネクタプラグで
ある。このタイプのモジュールは図2のレセプタクル型
のものに比べ温度制御機能が内蔵され、さらには光アイ
ソレータ等も内蔵されるようになってきている。さらに
は出力用光ファイバとしては、その光出力端に様々なコ
ネクタが用いられている。なかでもスーパーPCといわ
れるコネクタは非常に接続損が小さく、反射減衰量が−
40dB程度のものが実用化されている。
Next, in FIG. 3, 31 is a semiconductor laser chip, 32 is a lens, 33 is a focused beam, 34 is a monitor photodiode, 35 is a thermistor, 36 is a Peltier cooler, 37 is a package, 38 is a ferrule, and 39 is an output. 40 is an optical fiber connector plug. Compared to the receptacle type module shown in FIG. 2, this type of module has a built-in temperature control function, and is also increasingly equipped with an optical isolator and the like. Furthermore, various connectors are used at the optical output end of the output optical fiber. Among them, the connector called Super PC has extremely low connection loss and return loss of -
One with a level of about 40 dB has been put into practical use.

【0004】0004

【発明が解決しようとする課題】しかしながら、レセプ
タクル型では光ファイバコネクタプラグ27のフェルー
ル28先端がFC研磨のコネクタが用いられているため
、フェルール28端面からレーザへの戻り光が発生する
。デジタル伝送等ノイズレベルがそれほど伝送特性に影
響しないようなシステムでは十分使用が可能であるが、
アナログ伝送のようにノイズレベルが伝送性能を決定す
るようなシステムには適用できない。この戻り光の影響
を回避するためにフェルール28の先端を斜めに加工す
ることによりフェルール28端面からの戻り光は防ぐこ
とは出来る。このような斜めの系では、結合光軸を一直
線にすると結合効率が劣化し、これを回避するために結
合光軸を斜めにすると、光の入射角が着脱のたびに微妙
に変化するためトラッキングエラーが大きくなる。
However, since the receptacle type connector uses a connector in which the tip of the ferrule 28 of the optical fiber connector plug 27 is FC polished, light returns to the laser from the end surface of the ferrule 28. Although it can be used satisfactorily in systems where the noise level does not significantly affect transmission characteristics, such as digital transmission,
It cannot be applied to systems such as analog transmission where the noise level determines transmission performance. In order to avoid the influence of this returning light, returning light from the end face of the ferrule 28 can be prevented by processing the tip of the ferrule 28 obliquely. In such an oblique system, if the coupling optical axis is made in a straight line, the coupling efficiency will deteriorate.To avoid this, if the coupling optical axis is made oblique, the incident angle of the light will change slightly each time it is attached and detached, making tracking difficult. The error becomes larger.

【0005】一方、ピッグテール型のものは、集束ビー
ム光33とフェルール38間の結合部は組立時に固定す
るためトラッキングエラーはなく、またパッケージ37
内のフェルール38の端面から半導体レーザチップ31
への戻り光に関しても、フェルール38の先端を斜めに
研磨により抑圧することができる。しかしながらファイ
バ先端の光ファイバコネクタプラグ40は、近年高性能
なものが開発されているが、このコネクタ接合面におけ
る反射は完全に無くなっているわけではない。特にアナ
ログ伝送システムにおける経験では、この光ファイバコ
ネクタプラグ40の微妙な調整具合によりしばしば伝送
特性において支障が出ることが確認されている。すなわ
ち、アナログ伝送では、光の強度の絶対値そのものが情
報となっているため、非常に小さな反射率であっても、
伝送歪として現れる。たとえば単純な場合の例として、
伝送路に2つの反射点が存在し、反射点間の距離をL、
伝送路の屈折率をnとすると、この伝送路の透過率は、
干渉効果により伝播する光の波長によって図4のように
周期的に変化する。ここで、この周期TはT=c/2n
Lなる式で表わされる。ここでcは光速である。例とし
てL=1mとすると、約100MHzの周期で透過率が
変化する。一方、レーザは伝送情報に応じた電流で変調
されているため、強度変化と同時に、数100MHz/
mA(波長1.3ミクロンの場合)の割合で波長も変化
しているため伝送信号強度は正確に伝わらない。特にア
ナログ伝送系においては、これらの多重反射の影響が直
接伝送歪特性に現れ、実用上大きな障害となっている。
On the other hand, in the pigtail type, the coupling part between the focused beam 33 and the ferrule 38 is fixed during assembly, so there is no tracking error, and the package 37
Semiconductor laser chip 31 from the end face of ferrule 38 inside
The return light can also be suppressed by obliquely polishing the tip of the ferrule 38. However, although high-performance optical fiber connector plugs 40 at the fiber tips have been developed in recent years, reflections at the connector joint surface have not been completely eliminated. In particular, experience with analog transmission systems has confirmed that delicate adjustments of the optical fiber connector plug 40 often cause problems in transmission characteristics. In other words, in analog transmission, the absolute value of the light intensity itself is the information, so even if the reflectance is very small,
Appears as transmission distortion. For example, in a simple case,
There are two reflection points on the transmission path, and the distance between the reflection points is L,
If the refractive index of the transmission line is n, the transmittance of this transmission line is
It changes periodically as shown in FIG. 4 depending on the wavelength of the propagating light due to the interference effect. Here, this period T is T=c/2n
It is expressed by the formula L. Here c is the speed of light. As an example, if L=1 m, the transmittance changes at a period of about 100 MHz. On the other hand, since the laser is modulated with a current according to the transmitted information, the intensity changes at the same time as several hundred MHz/
Since the wavelength also changes at a rate of mA (in the case of a wavelength of 1.3 microns), the transmission signal strength is not transmitted accurately. Particularly in analog transmission systems, the effects of these multiple reflections directly appear on the transmission distortion characteristics, which poses a major practical obstacle.

【0006】本発明はこのような点に鑑み、上記ファイ
バコネクタあるいは伝送路等において反射点があっても
安定した伝送特性が得られる半導体レーザモジュールを
提供することを目的とするものである。
In view of these points, it is an object of the present invention to provide a semiconductor laser module that can obtain stable transmission characteristics even if there are reflection points in the fiber connector or transmission path.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に本発明は、レーザ光出力用ファイバと半導体レーザの
間の光路上に偏光解消板を配置するものである。また、
その偏光解消板と半導体レーザの間の光路上に光アイソ
レータを配置するものである。
[Means for Solving the Problems] In order to achieve the above object, the present invention disposes a depolarizing plate on the optical path between the laser light output fiber and the semiconductor laser. Also,
An optical isolator is placed on the optical path between the depolarizing plate and the semiconductor laser.

【0008】[0008]

【作用】上記構成により、半導体レーザから出射直後は
単一偏光特性を有する光が偏光解消板を通過することに
よりランダム偏光となり、これにより伝送系内に多重反
射を生じるような反射点が存在しても、多重反射した光
どうしが干渉し合う確率が激減し、その結果、伝送系に
おける透過率の波長依存性が極端に抑圧されるため安定
した低歪な伝送特性を得ることが可能となる。
[Operation] With the above configuration, immediately after being emitted from the semiconductor laser, light having a single polarization characteristic becomes randomly polarized light by passing through the depolarizing plate, and as a result, there are reflection points in the transmission system that cause multiple reflections. However, the probability that multiple reflected lights will interfere with each other is drastically reduced, and as a result, the wavelength dependence of transmittance in the transmission system is extremely suppressed, making it possible to obtain stable, low-distortion transmission characteristics. .

【0009】[0009]

【実施例】図1は本発明の一実施例における半導体レー
ザモジュールの構成図を示す。図1において、1は半導
体レーザ、2は光学レンズ、3は光アイソレータ、4は
偏光解消板、5はモニター用ホトディテクタ、6はサー
ミスタ、7はペルチェクーラ、8はパッケージ、9はフ
ェルール、10はファイバ、11は光コネクタプラグで
ある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a configuration diagram of a semiconductor laser module according to an embodiment of the present invention. In FIG. 1, 1 is a semiconductor laser, 2 is an optical lens, 3 is an optical isolator, 4 is a depolarizing plate, 5 is a monitor photodetector, 6 is a thermistor, 7 is a Peltier cooler, 8 is a package, 9 is a ferrule, 10 is a fiber, and 11 is an optical connector plug.

【0010】以上のように構成されたレーザモジュール
において、以下その動作を説明する。直接変調された半
導体レーザ1から出射した光は光学レンズ2で集光され
るが、その時の光12は単一偏光特性を有しかつ偏波面
も保存されている。光アイソレータ3を経た光13は偏
波面は45度回転するが同じく単一偏光特性を有する。 次に偏光解消板4を通過した光14はランダム偏光とな
る。ここで偏光解消板4の機能を簡単に説明すると、偏
光解消板4を構成する材料は、偏波面を回転させる機能
を持ち、その回転角は光が通過する光路長により変化す
る。ここでこの偏光解消板4の厚さは空間的に変化して
いるため透過光はランダム偏光となる。このように偏光
解消板を通過した光14はランダム偏光となり、フェル
ール9に結合される。
The operation of the laser module constructed as described above will be explained below. The light emitted from the directly modulated semiconductor laser 1 is focused by the optical lens 2, but the light 12 at that time has a single polarization characteristic and the plane of polarization is also preserved. Although the plane of polarization of the light 13 passing through the optical isolator 3 is rotated by 45 degrees, it also has single polarization characteristics. Next, the light 14 that passes through the depolarization plate 4 becomes randomly polarized light. Here, to briefly explain the function of the depolarizing plate 4, the material forming the depolarizing plate 4 has a function of rotating the plane of polarization, and the rotation angle changes depending on the optical path length through which the light passes. Here, since the thickness of this depolarization plate 4 varies spatially, the transmitted light becomes randomly polarized light. The light 14 that has passed through the depolarizing plate in this manner becomes randomly polarized light and is coupled to the ferrule 9.

【0011】発明が解決しようとする課題の項で述べた
ように、ファイバ内を伝幡する光が単一偏光すなわち直
線偏光の場合、その伝送路内に複数の反射点が存在する
と多重反射が起こり、干渉効果により透過率が波長によ
り変動し伝送歪の原因となるが、本実施例のようにラン
ダム偏光の場合には多重反射が発生しても、干渉は殆ど
起きないため、歪の少ない良好な伝送特性が実現できる
As stated in the section on the problem to be solved by the invention, when the light propagating in the fiber is single polarized light, that is, linearly polarized light, multiple reflections occur if there are multiple reflection points in the transmission path. However, in the case of randomly polarized light as in this example, even if multiple reflections occur, almost no interference occurs, so there is little distortion. Good transmission characteristics can be achieved.

【0012】なお、本実施例では光学レンズ2が1枚の
場合について述べたが、2枚のレンズ系であっても偏光
解消板4の配置場所は、光アイソレータ3通過後であれ
ば特に限定するものではない。
[0012] In this embodiment, the case where there is only one optical lens 2 has been described, but even in a two-lens system, the location of the depolarizing plate 4 is particularly limited as long as it passes through the optical isolator 3. It's not something you do.

【0013】以上のようにこの実施例によれば、半導体
レーザモジュール結合光学系の中に偏光解消板4を配置
することにより、伝送歪特性を大幅に改善することが出
来る。
As described above, according to this embodiment, by arranging the depolarization plate 4 in the semiconductor laser module coupling optical system, the transmission distortion characteristics can be greatly improved.

【0014】[0014]

【発明の効果】以上のように本発明は、レーザ光出力用
ファイバと半導体レーザの間の光路上に偏光解消板を配
置する構成、またその偏光解消板と半導体レーザの間の
光路上に光アイソレータを配置する構成よりなるので、
伝送路内に複数の反射点がある場合でも、その多重反射
による透過光の変動は著しく抑圧され、アナログ伝送系
における歪特性を改善した半導体レーザモジュールを提
供できる。
As described above, the present invention provides a structure in which a depolarizing plate is disposed on the optical path between a laser light output fiber and a semiconductor laser, and a structure in which a depolarizing plate is disposed on the optical path between the depolarizing plate and the semiconductor laser. Since it consists of a configuration in which isolators are placed,
Even when there are multiple reflection points in the transmission path, fluctuations in transmitted light due to multiple reflections are significantly suppressed, making it possible to provide a semiconductor laser module with improved distortion characteristics in an analog transmission system.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例における半導体レーザモジュ
ールの構成図
FIG. 1 is a configuration diagram of a semiconductor laser module in an embodiment of the present invention.

【図2】従来の半導体レーザモジュールの構成図[Figure 2] Configuration diagram of a conventional semiconductor laser module

【図3
】従来の半導体レーザモジュールの構成図
[Figure 3
] Configuration diagram of a conventional semiconductor laser module

【図4】図2
,図3における光の波長の変化に対する伝送路の透過率
の関係を示す図
[Figure 4] Figure 2
, a diagram showing the relationship between the transmittance of the transmission line and the change in the wavelength of light in Figure 3.

【符号の説明】[Explanation of symbols]

1  半導体レーザ 2  光学レンズ 3  光アイソレータ 4  偏光解消板 5  モニター用ホトディテクタ 6  サーミスタ 7  ペルチェクーラ 8  パッケージ 9  フェルール 10  ファイバ 11  光コネクタプラグ 1 Semiconductor laser 2 Optical lens 3 Optical isolator 4 Depolarizing plate 5 Photodetector for monitor 6 Thermistor 7. Pertier coola 8 Package 9 Ferrule 10 Fiber 11 Optical connector plug

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】半導体レーザ,光学レンズおよびレーザ光
出力用ファイバを少なくとも有する半導体レーザモジュ
ールにおいて、前記レーザ光出力用ファイバと前記半導
体レーザの間の光路上に偏光解消板を配置したことを特
徴とする半導体レーザモジュール。
1. A semiconductor laser module having at least a semiconductor laser, an optical lens, and a laser light output fiber, characterized in that a depolarizing plate is disposed on an optical path between the laser light output fiber and the semiconductor laser. semiconductor laser module.
【請求項2】偏光解消板と半導体レーザの間の光路上に
光アイソレータを配置したことを特徴とする請求項1記
載の半導体レーザモジュール。
2. The semiconductor laser module according to claim 1, further comprising an optical isolator disposed on the optical path between the depolarizing plate and the semiconductor laser.
JP14717291A 1991-06-19 1991-06-19 Semiconductor laser module Pending JPH04369888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14717291A JPH04369888A (en) 1991-06-19 1991-06-19 Semiconductor laser module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14717291A JPH04369888A (en) 1991-06-19 1991-06-19 Semiconductor laser module

Publications (1)

Publication Number Publication Date
JPH04369888A true JPH04369888A (en) 1992-12-22

Family

ID=15424213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14717291A Pending JPH04369888A (en) 1991-06-19 1991-06-19 Semiconductor laser module

Country Status (1)

Country Link
JP (1) JPH04369888A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692082A (en) * 1995-03-17 1997-11-25 Fujitsu Limited Laser diode module and depolarizer
JPH10126002A (en) * 1996-10-23 1998-05-15 Matsushita Electron Corp Optical transmission module
WO1998034146A1 (en) * 1997-02-03 1998-08-06 Integrated Optical Components Limited Optical component assemblies
WO1998034145A1 (en) * 1997-02-03 1998-08-06 Integrated Optical Components Limited Optical component assemblies
WO2003005509A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co.,Ltd Semiconductor laser module, light amplifier and method of producing semiconductor laser module
WO2003005507A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co.,Ltd Semiconductor laser module and production method therefor, and light amplifier
WO2003005508A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co., Ltd Semiconductor laser module, optical amplifier, and method for manufacturing semiconductor laser module
US6765935B2 (en) 2000-12-15 2004-07-20 The Furukawa Electric Co., Ltd. Semiconductor laser module, manufacturing method thereof and optical amplifier
US6782028B2 (en) 2000-12-15 2004-08-24 The Furukawa Electric Co., Ltd. Semiconductor laser device for use in a semiconductor laser module and an optical amplifier
US7085440B2 (en) 2001-07-02 2006-08-01 The Furukawa Electric Co., Ltd Semiconductor laser module and optical amplifier
US7245643B2 (en) 2001-07-02 2007-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser module and method of manufacturing the same
US7408867B2 (en) 2002-04-04 2008-08-05 The Furukawa Electric Co., Ltd. Method of aligning an optical fiber, method of manufacturing a semiconductor laser module, and semiconductor laser module

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692082A (en) * 1995-03-17 1997-11-25 Fujitsu Limited Laser diode module and depolarizer
JPH10126002A (en) * 1996-10-23 1998-05-15 Matsushita Electron Corp Optical transmission module
WO1998034146A1 (en) * 1997-02-03 1998-08-06 Integrated Optical Components Limited Optical component assemblies
WO1998034145A1 (en) * 1997-02-03 1998-08-06 Integrated Optical Components Limited Optical component assemblies
US6782028B2 (en) 2000-12-15 2004-08-24 The Furukawa Electric Co., Ltd. Semiconductor laser device for use in a semiconductor laser module and an optical amplifier
US6765935B2 (en) 2000-12-15 2004-07-20 The Furukawa Electric Co., Ltd. Semiconductor laser module, manufacturing method thereof and optical amplifier
WO2003005508A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co., Ltd Semiconductor laser module, optical amplifier, and method for manufacturing semiconductor laser module
WO2003005507A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co.,Ltd Semiconductor laser module and production method therefor, and light amplifier
WO2003005509A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co.,Ltd Semiconductor laser module, light amplifier and method of producing semiconductor laser module
US7085440B2 (en) 2001-07-02 2006-08-01 The Furukawa Electric Co., Ltd Semiconductor laser module and optical amplifier
US7245643B2 (en) 2001-07-02 2007-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser module and method of manufacturing the same
US7259905B2 (en) 2001-07-02 2007-08-21 The Furukawa Electric Co., Ltd. Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module
US7529021B2 (en) * 2001-07-02 2009-05-05 The Furukawa Electric Co., Ltd. Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module
US7408867B2 (en) 2002-04-04 2008-08-05 The Furukawa Electric Co., Ltd. Method of aligning an optical fiber, method of manufacturing a semiconductor laser module, and semiconductor laser module

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