JPH0436580B2 - - Google Patents

Info

Publication number
JPH0436580B2
JPH0436580B2 JP60018257A JP1825785A JPH0436580B2 JP H0436580 B2 JPH0436580 B2 JP H0436580B2 JP 60018257 A JP60018257 A JP 60018257A JP 1825785 A JP1825785 A JP 1825785A JP H0436580 B2 JPH0436580 B2 JP H0436580B2
Authority
JP
Japan
Prior art keywords
light
photoconductive element
photoelectric conversion
bias
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60018257A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61177774A (ja
Inventor
Noboru Yoshigami
Kosuke Ikeda
Yoichi Harada
Mikihiko Nishitani
Takahiro Nishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60018257A priority Critical patent/JPS61177774A/ja
Publication of JPS61177774A publication Critical patent/JPS61177774A/ja
Publication of JPH0436580B2 publication Critical patent/JPH0436580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP60018257A 1985-02-01 1985-02-01 光電変換装置 Granted JPS61177774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60018257A JPS61177774A (ja) 1985-02-01 1985-02-01 光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60018257A JPS61177774A (ja) 1985-02-01 1985-02-01 光電変換装置

Publications (2)

Publication Number Publication Date
JPS61177774A JPS61177774A (ja) 1986-08-09
JPH0436580B2 true JPH0436580B2 (enrdf_load_stackoverflow) 1992-06-16

Family

ID=11966627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60018257A Granted JPS61177774A (ja) 1985-02-01 1985-02-01 光電変換装置

Country Status (1)

Country Link
JP (1) JPS61177774A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5162902B2 (ja) * 2007-01-09 2013-03-13 オムロン株式会社 光電センサの受光ユニットおよび光電センサの投光ユニット

Also Published As

Publication number Publication date
JPS61177774A (ja) 1986-08-09

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