JPH0436450B2 - - Google Patents

Info

Publication number
JPH0436450B2
JPH0436450B2 JP57167280A JP16728082A JPH0436450B2 JP H0436450 B2 JPH0436450 B2 JP H0436450B2 JP 57167280 A JP57167280 A JP 57167280A JP 16728082 A JP16728082 A JP 16728082A JP H0436450 B2 JPH0436450 B2 JP H0436450B2
Authority
JP
Japan
Prior art keywords
reactive gas
plasma
pair
reaction vessel
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57167280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956725A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57167280A priority Critical patent/JPS5956725A/ja
Priority to US06/533,941 priority patent/US4582720A/en
Publication of JPS5956725A publication Critical patent/JPS5956725A/ja
Priority to US06/828,908 priority patent/US4642243A/en
Priority to US06/828,790 priority patent/US4640845A/en
Priority to US07/127,602 priority patent/US4832981A/en
Publication of JPH0436450B2 publication Critical patent/JPH0436450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP57167280A 1982-09-20 1982-09-25 プラズマｃｖｄ装置 Granted JPS5956725A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57167280A JPS5956725A (ja) 1982-09-25 1982-09-25 プラズマｃｖｄ装置
US06/533,941 US4582720A (en) 1982-09-20 1983-09-20 Method and apparatus for forming non-single-crystal layer
US06/828,908 US4642243A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US06/828,790 US4640845A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US07/127,602 US4832981A (en) 1982-09-20 1987-11-30 Method and apparatus for forming non-single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167280A JPS5956725A (ja) 1982-09-25 1982-09-25 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS5956725A JPS5956725A (ja) 1984-04-02
JPH0436450B2 true JPH0436450B2 (enExample) 1992-06-16

Family

ID=15846814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57167280A Granted JPS5956725A (ja) 1982-09-20 1982-09-25 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS5956725A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field

Also Published As

Publication number Publication date
JPS5956725A (ja) 1984-04-02

Similar Documents

Publication Publication Date Title
KR100297284B1 (ko) 처리장치및드라이크리닝방법
US4796562A (en) Rapid thermal cvd apparatus
US7494545B2 (en) Epitaxial deposition process and apparatus
CN110622283B (zh) 减少或消除钨膜中缺陷的方法
JPH036224B2 (enExample)
TW202117931A (zh) 間隙填充沉積製程
TWI866744B (zh) 大面積/晶圓級cmos相容製程的二維材料插層摻雜，包括摻雜合成石墨烯的摻雜工具、製程與方法
JPH03287770A (ja) 枚葉式常圧ｃｖｄ装置
US10714388B2 (en) Method and apparatus for depositing cobalt in a feature
JP2016516293A (ja) 基板処理装置
KR20120063484A (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치용 가스 공급 기구
JP2616760B2 (ja) プラズマ気相反応装置
US20230094012A1 (en) Rf pulsing assisted low-k film deposition with high mechanical strength
CN104934348A (zh) 用于处理衬底的设备
US20030175426A1 (en) Heat treatment apparatus and method for processing substrates
JPH0436451B2 (enExample)
JPS6062113A (ja) プラズマｃｖｄ装置
JPS61232612A (ja) 気相反応装置
JP2648684B2 (ja) プラズマ気相反応装置
JP2649331B2 (ja) プラズマ処理方法
JPH0236058B2 (enExample)
JPS5956725A (ja) プラズマｃｖｄ装置
JP2670561B2 (ja) プラズマ気相反応による被膜形成方法
JPH0732127B2 (ja) プラズマ気相反応装置
JP2649330B2 (ja) プラズマ処理方法