JPH04363854A - Ion processing device - Google Patents
Ion processing deviceInfo
- Publication number
- JPH04363854A JPH04363854A JP3166378A JP16637891A JPH04363854A JP H04363854 A JPH04363854 A JP H04363854A JP 3166378 A JP3166378 A JP 3166378A JP 16637891 A JP16637891 A JP 16637891A JP H04363854 A JPH04363854 A JP H04363854A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- cover
- sample holder
- ion
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、真空中で試料保持具
に保持された試料にイオンビームを照射して当該試料を
処理するイオン処理装置に関し、特に、試料保持具のス
パッタリングによる試料への不純物の混入を防止する手
段に関する。[Field of Industrial Application] The present invention relates to an ion processing apparatus for processing a sample held in a sample holder in vacuum by irradiating the sample with an ion beam, and in particular for processing the sample by sputtering the sample holder. This invention relates to means for preventing contamination of impurities.
【０００２】0002
【従来の技術】この種のイオン処理装置としては、イオ
ン注入装置、イオン注入と真空蒸着とを併用するイオン
蒸着薄膜形成装置、イオンビームエッチング装置等があ
る。以下においてはイオン注入装置を例に説明する。2. Description of the Related Art Ion processing apparatuses of this type include ion implantation apparatuses, ion vapor deposition thin film forming apparatuses that use both ion implantation and vacuum deposition, and ion beam etching apparatuses. In the following, an ion implantation device will be explained as an example.
【０００３】図３は、従来のイオン注入装置の試料保持
具の一例を示す概略図である。この試料保持具１は、真
空容器（図示せず）内において、例えばウエハ等からな
る試料２を、試料保持台１１に載せ、試料押さえ１２に
よって押え、これを保持しするようにしたものである。
そして図示しないイオン源からイオンビーム３を照射し
、当該試料２を処理、例えばイオン注入するようにして
いる。なお、１３は冷媒路である。FIG. 3 is a schematic diagram showing an example of a sample holder of a conventional ion implanter. This sample holder 1 is configured such that a sample 2 made of, for example, a wafer is placed on a sample holder 11 and held by a sample holder 12 in a vacuum container (not shown). . Then, an ion beam 3 is irradiated from an ion source (not shown), and the sample 2 is processed, for example, ions are implanted. Note that 13 is a refrigerant path.
【０００４】0004
【発明が解決しようとする課題】イオン処理装置等にお
いては通常、試料２の全面に均一にイオンビーム３を注
入するため、試料２よりも広い領域にイオンビーム３を
照射する。従って、イオンビーム３は、試料２が保持さ
れた部分以外の試料押さえ１２にも照射される。このた
め、当該イオンビーム３によって試料２のレジストが飛
散して試料押さえ１２を汚損したり、試料押さえ１２の
表面がスパッタされたりすることとなる。[Problems to be Solved by the Invention] Generally, in an ion processing apparatus or the like, in order to uniformly implant the ion beam 3 over the entire surface of the sample 2, a wider area than the sample 2 is irradiated with the ion beam 3. Therefore, the ion beam 3 is also applied to the sample holder 12 other than the portion where the sample 2 is held. For this reason, the resist of the sample 2 is scattered by the ion beam 3, staining the sample holder 12, or sputtering the surface of the sample holder 12.
【０００５】この場合、試料押さえ１２の材質は、例え
ばアルミニュウム合金であり、試料２のそれは、シリコ
ンであるため、試料２の成分原子と異なるスパッタ原子
であるアルミニュウム合金や上述のレジスト等が不純物
として試料２に混入するといった不都合があった。In this case, the material of the sample holder 12 is, for example, an aluminum alloy, and that of the sample 2 is silicon, so that the aluminum alloy, which is sputtered atoms different from the component atoms of the sample 2, the above-mentioned resist, etc. may be impurities. There was an inconvenience that it mixed into sample 2.
【０００６】そこでこの発明は、イオンビームが試料押
さえをスパッタすることによる試料への不純物の混入が
生じない試料保持具を備えたイオン処理装置を提供する
ことを主たる目的とする。Accordingly, the main object of the present invention is to provide an ion processing apparatus equipped with a sample holder that does not cause impurities to be mixed into the sample due to sputtering of the ion beam onto the sample holder.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
、この発明のイオン処理装置は、前述したような試料押
さえの少なくともイオンビームが照射される側に着脱可
能にカバーを設けると共に、このカバーの表面を試料と
同系の材質から成る保護材で覆ったことを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the ion processing apparatus of the present invention is provided with a removable cover at least on the side of the sample holder that is irradiated with the ion beam as described above, and this cover. The surface of the specimen is covered with a protective material made of a material similar to that of the specimen.
【０００８】[0008]
【作用】上記構成によれば、試料押さえの表面は、カバ
ーによって覆われているので、少なくとも試料押さえそ
のものがスパッタされるのが防止される。その際、カバ
ーの表面を覆う保護材がスパッタされるが、そのスパッ
タ原子は、試料の構成原子と同系のものであるため、こ
れが試料に混入しても不都合はない。[Function] According to the above structure, the surface of the sample holder is covered with the cover, so that at least the sample holder itself is prevented from being sputtered. At this time, the protective material covering the surface of the cover is sputtered, but since the sputtered atoms are of the same type as the constituent atoms of the sample, there is no problem even if the sputtered atoms are mixed into the sample.
【０００９】また、試料押えからカバーを取り外すこと
が出来るので、カバーの汚れ落しが簡単に実施できる。Furthermore, since the cover can be removed from the sample holder, it is easy to clean the cover.
【００１０】0010
【実施例】図１は、この発明の一実施例に係るイオン注
入装置の試料保持具の概略断面図である。図２は、カバ
ーの一例を示す斜視図である。図３の従来例と同一また
は相当する部分には同一符号を付し、以下においては当
該従来例との相違点を主に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic cross-sectional view of a sample holder of an ion implantation apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of the cover. The same reference numerals are given to the same or corresponding parts as in the conventional example shown in FIG. 3, and the differences from the conventional example will be mainly explained below.
【００１１】この実施例においては、前述したような試
料押さえ１２のイオンビームが照射される側に、例えば
アルミニュム合金等の薄板をプレスにより一体成形され
たカバー４が、着脱可能に設けられている。図示例では
、このカバー４の側面の４箇所に爪部４１が形成されて
おり、この爪部４１が前記試料押さえ１２の側面に形成
された溝１４にはまり合うことにより、着脱可能に構成
されている。このカバー４の試料押さえ１２への取り付
けに際しては、これに限られず、ネジ、ボルト等を用い
てカバー４を試料押さえ１２に螺着することにより、着
脱可能に構成しても良いのは勿論である。In this embodiment, a cover 4 integrally formed by pressing a thin plate of aluminum alloy or the like is removably provided on the side of the sample holder 12 as described above that is irradiated with the ion beam. . In the illustrated example, claw portions 41 are formed at four locations on the side surface of the cover 4, and by fitting the claw portions 41 into grooves 14 formed on the side surface of the sample holder 12, the cover 4 is configured to be detachable. ing. The attachment of the cover 4 to the sample holder 12 is not limited to this, and it goes without saying that the cover 4 may be configured to be detachable by screwing the cover 4 onto the sample holder 12 using screws, bolts, etc. be.
【００１２】カバー４の表面は、試料２と同系（同じも
のを含む）の材質から成る保護材５で覆っている。保護
材５は、例えばＳｉ系の試料２にイオン注入する場合に
は、試料１２と同じＳｉ系のものを真空蒸着やスパッタ
リング蒸着等によりコーティングする。より具体的には
、試料２としてＳｉにイオン注入する場合には、Ｓｉ、
ＳｉＯ２、ｐｏｌｙ−Ｓｉ等とする。The surface of the cover 4 is covered with a protective material 5 made of a material similar to (including the same material as) the sample 2. For example, when ion-implanting the Si-based sample 2, the protective material 5 is coated with the same Si-based material as the sample 12 by vacuum evaporation, sputtering evaporation, or the like. More specifically, when implanting ions into Si as sample 2, Si,
SiO2, poly-Si, etc.
【００１３】上記実施例によれば、試料２のイオン注入
に際し、試料２と同系の材質からなる保護材５で覆われ
たカバー４によって、試料押えさ１２がイオンビーム３
によつてスパッタされるのが防止される。従って、試料
押さえ１２の成分原子が試料２に不純物として混入する
ようなことが防止される。もっともその際、イオンビー
ム３は保護材５をスパッタして例えばＳｉ原子を叩き出
すけれども、このようなスパッタ原子は試料２の構成原
子と同系のものであるため、これが試料２に混入しても
何等不都合はない、それゆえ、イオン注入後の試料２と
しては、コンタミネーションの非常に少ない良質のもの
が得られる。According to the above embodiment, when ion-implanting the sample 2, the cover 4 covered with the protective material 5 made of the same material as the sample 2 allows the sample holder 12 to hold the ion beam 3.
sputtering is prevented. Therefore, the component atoms of the sample holder 12 are prevented from being mixed into the sample 2 as impurities. However, at that time, the ion beam 3 sputters the protective material 5 and knocks out, for example, Si atoms, but since these sputtered atoms are of the same type as the constituent atoms of the sample 2, even if they get mixed into the sample 2. There are no inconveniences; therefore, the sample 2 after ion implantation can be of good quality with very little contamination.
【００１４】さらに、カバー４がイオン注入によりレジ
スト等の飛散で汚損された場合には、これのみを取り外
し、汚れを落とすか、新たなものと取り替えれば良く、
その保守時間が短縮できる。Furthermore, if the cover 4 is soiled by scattering resist or the like due to ion implantation, it is sufficient to remove only this and clean it or replace it with a new one.
The maintenance time can be shortened.
【００１５】なお、保護材５は、必ずしも試料押さえ１
２に設けられたカバー４の全域を覆わなくても試料の２
の少なくとも周囲のみを覆っても良く、そのような場合
でも上述のような試料２に対する不純物混入防止効果は
大きい。Note that the protective material 5 does not necessarily cover the sample holder 1.
2 of the sample even if the entire area of the cover 4 provided on the sample 2 is not covered.
It may be possible to cover at least only the periphery of the sample 2, and even in such a case, the effect of preventing impurities from being mixed into the sample 2 as described above is large.
【００１６】また上記実施例では、イオン注入装置につ
いて詳述したが、この発明はこれに限定されるものでは
なく、前述したようなイオン処理装置に適用できるのは
勿論である。Further, in the above embodiment, the ion implantation apparatus was described in detail, but the present invention is not limited thereto, and can of course be applied to the ion processing apparatus as described above.
【００１７】[0017]
【発明の効果】以上のようにこの発明によれば、イオン
ビームが試料押さえをスパッタすることによる試料への
不純物の混入を防止することができる外、カバーがイオ
ン注入によりレジスト等の飛散で汚損された場合には、
これのみを取り外し、汚れを落とすか、新たなものと取
り替えれば良く、短時間の内に保守作業を完了すること
ができる。As described above, according to the present invention, in addition to being able to prevent impurities from being mixed into the sample due to the ion beam sputtering the sample holder, the cover can also be prevented from becoming contaminated due to scattering of resist, etc. due to ion implantation. If the
Maintenance work can be completed in a short period of time by removing only this part, cleaning it, or replacing it with a new one.
【図１】 この発明の一実施例に係るイオン注入装置
の試料保持具の部分断面図である。FIG. 1 is a partial cross-sectional view of a sample holder of an ion implantation apparatus according to an embodiment of the present invention.
【図２】 図１のカバーの一例を示す斜視図である。FIG. 2 is a perspective view showing an example of the cover of FIG. 1.
【図３】 従来のイオン注入装置の試料保持具の一例
を示す部分断面図である。FIG. 3 is a partial cross-sectional view showing an example of a sample holder of a conventional ion implantation device.
１ 試料保持具 １１ 試料保持台 １２ 試料押さえ ２ 試料 ３ イオンビーム ４ カバー ５ 保護材 1 Sample holder 11 Sample holding stand 12 Sample holder 2 Sample 3 Ion beam 4 Cover 5 Protective material
Claims (1)
せられた試料を押さえる試料押さえとからなる試料保持
具を備え、真空中で前記試料にイオンビームを照射して
当該試料を処理するイオン処理装置において、前記試料
押さえの少なくともイオンビームが照射される側に着脱
可能にカバーを設けると共に、このカバーの表面を試料
と同系の材質から成る保護材で覆ったことを特徴とする
イオン処理装置。Claim 1: A sample holder comprising a sample holder and a sample holder for holding down a sample placed on the sample holder, and processes the sample by irradiating the sample with an ion beam in a vacuum. An ion processing apparatus characterized in that a removable cover is provided on at least the side of the sample holder that is irradiated with the ion beam, and the surface of the cover is covered with a protective material made of a material similar to that of the sample. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3166378A JPH04363854A (en) | 1991-06-10 | 1991-06-10 | Ion processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3166378A JPH04363854A (en) | 1991-06-10 | 1991-06-10 | Ion processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04363854A true JPH04363854A (en) | 1992-12-16 |
Family
ID=15830309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3166378A Pending JPH04363854A (en) | 1991-06-10 | 1991-06-10 | Ion processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04363854A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995006953A1 (en) * | 1993-08-20 | 1995-03-09 | Tadahiro Ohmi | Ion implanter |
| JP2002329677A (en) * | 2001-04-27 | 2002-11-15 | Semiconductor Energy Lab Co Ltd | Doping system |
| JP2011198738A (en) * | 2010-02-23 | 2011-10-06 | Nissin Ion Equipment Co Ltd | Magnet for ion beam irradiation apparatus equipped with protective member that covers plurality of magnetic field concentrating members |
| JP2014063763A (en) * | 2010-02-23 | 2014-04-10 | Nissin Ion Equipment Co Ltd | Magnet for ion beam irradiation device including protective member for covering a plurality of magnetic field concentration member |
-
1991
- 1991-06-10 JP JP3166378A patent/JPH04363854A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995006953A1 (en) * | 1993-08-20 | 1995-03-09 | Tadahiro Ohmi | Ion implanter |
| JP2002329677A (en) * | 2001-04-27 | 2002-11-15 | Semiconductor Energy Lab Co Ltd | Doping system |
| JP2011198738A (en) * | 2010-02-23 | 2011-10-06 | Nissin Ion Equipment Co Ltd | Magnet for ion beam irradiation apparatus equipped with protective member that covers plurality of magnetic field concentrating members |
| JP2014063763A (en) * | 2010-02-23 | 2014-04-10 | Nissin Ion Equipment Co Ltd | Magnet for ion beam irradiation device including protective member for covering a plurality of magnetic field concentration member |
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