JP2555359Y2 - Semiconductor device manufacturing equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to an ion implantation apparatus for implanting impurities into a semiconductor wafer.

[0002]

2. Description of the Related Art A conventional ion implantation apparatus has an ion source section 1 for generating ions, an acceleration section for extracting and accelerating the generated ions, and a mass spectrometer section 3 for removing unnecessary ions as shown in FIG. The semiconductor wafer 5 is fixed, and has a wafer holder 4 for measuring an ion implantation amount based on a received ion current amount, and a beam line 8 for performing various operations for accurately implanting an ion beam into the semiconductor wafer. . The secondary electron pressing electrode 6, which is a component in the beam line 8 directly exposed to the ion beam 7, has an electrode surface 9a that has not been mirror-finished, and thus has many small irregularities.

[0003]

In this conventional ion implantation apparatus, since the surface of the component directly exposed to the ion beam is not mirror-finished, there are many irregularities on the surface, and the reactant generated by the ion beam on the surface of the component. However, there was a problem that the particles easily adhered. In addition, the ion beam collides with the adhering substance, so that the adhering substance is liable to be sputtered. Further, since the component itself has many irregularities, it is easily sputtered by the ion beam, and the surface of the semiconductor wafer is contaminated by the sputtered substance. was there.

[0004]

In the apparatus for manufacturing a semiconductor device according to the present invention, parts in a beam line which are directly exposed to an ion beam during ion implantation of a wafer are mirror-finished.

[0005]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a configuration diagram of an embodiment of the present invention. After the ions generated in the ion source unit 1 are accelerated by the acceleration unit 2, only necessary ions pass through the mass analysis unit 3, undergo various operations by the beam line 8, and are implanted into the semiconductor wafer 5. The wafer holder 4 serves to fix the wafer and measure the amount of ion implantation as an integrated value of the ion current. The electrode 6 for holding down the secondary electrons in the beam line includes the semiconductor wafer 5 and the wafer holder 4.
The secondary electrons generated when the ion beam 7 collides with the target are suppressed to suppress the fluctuation of the measured injection amount due to the secondary electron jumping out.

At this time, the secondary electron pressing electrode 6 is directly exposed to the ion beam. However, in the case of the present invention, since the electrode surface 9 is mirror-finished, the reactant by the ion beam hardly adheres. In addition, the secondary electron pressing electrode 6 itself is not easily sputtered by the ion beam, and contamination of the semiconductor wafer by the sputtered substance is minimized.

[0007]

As described above, in the semiconductor manufacturing apparatus of the present invention, since the surface of the component in the beam line that is directly exposed to the ion beam is mirror-finished, the reactant adhering to the component surface and the component itself are removed. This has the effect that contamination of the semiconductor wafer surface due to sputtering can be reduced to 1/2 to 1/3.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

FIG. 2 is a configuration diagram of a conventional ion implantation apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ion source part 2 Acceleration part 3 Mass analysis part 4 Wafer holder 5 Semiconductor wafer 6 Electrode for suppressing secondary electrons 7 Ion beam 8 Beam line 9 Mirror-finished electrode surface 9a Electrode surface which is not mirror-finished

Claims (1)

(57) [Scope of request for utility model registration] 1. A semiconductor device manufacturing apparatus for implanting impurities into a semiconductor wafer by ion implantation, wherein components in a beam line directly exposed to an ion beam at the time of ion implantation are mirror-finished. Manufacturing equipment.