JPH04360518A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPH04360518A JPH04360518A JP3136655A JP13665591A JPH04360518A JP H04360518 A JPH04360518 A JP H04360518A JP 3136655 A JP3136655 A JP 3136655A JP 13665591 A JP13665591 A JP 13665591A JP H04360518 A JPH04360518 A JP H04360518A
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- amorphous silicon
- layer
- photovoltaic device
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 20
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、多結晶の光起電力装置
の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a polycrystalline photovoltaic device.
【０００２】0002
【従来の技術】ガラス、ステンレス等の基板上に非晶質
半導体、例えば、非晶質シリコン層を形成してなる光起
電力装置は、その製造が簡単で安価である反面、光電変
換効率が低いという問題があった。[Prior Art] A photovoltaic device formed by forming an amorphous semiconductor, such as an amorphous silicon layer, on a substrate made of glass, stainless steel, etc. is easy and inexpensive to manufacture, but has low photoelectric conversion efficiency. The problem was that it was low.
【０００３】そこで、基板上に形成した非晶質シリコン
層に対し、アニールまたはエネルギービーム照射等によ
る熱処理を施すことにより、非晶質シリコン層を結晶化
させて光起電力装置を製造することが成されている。[0003] Therefore, it is possible to produce a photovoltaic device by crystallizing the amorphous silicon layer by subjecting the amorphous silicon layer formed on the substrate to heat treatment such as annealing or energy beam irradiation. has been completed.
【０００４】斯る非晶質シリコン層の結晶化の方法とし
ては、特開平１−４６２７８号公報に示されているよう
に、碁盤目状に金属導電層を形成した絶縁基板上に非晶
質シリコン層を形成し、この非晶質シリコン層を熱処理
して結晶化する方法がある。As a method for crystallizing such an amorphous silicon layer, as shown in Japanese Unexamined Patent Publication No. 1-46278, an amorphous silicon layer is formed on an insulating substrate on which a metal conductive layer is formed in a checkerboard pattern. There is a method in which a silicon layer is formed and this amorphous silicon layer is crystallized by heat treatment.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記方
法によれば、絶縁基板上に形成された金属導電層によっ
て基板上に不所望な凹凸が生じ、この上に形成され、後
に結晶化される非晶質半導体層を均一な膜厚で形成する
のが困難であった。[Problems to be Solved by the Invention] However, according to the above method, the metal conductive layer formed on the insulating substrate causes undesired unevenness on the substrate, and the non-conductive layer formed on the substrate and later crystallized. It has been difficult to form a crystalline semiconductor layer with a uniform thickness.
【０００６】また、上述の方法において、十分に高品質
な多結晶シリコンを形成するには、至っていない。Furthermore, the above-mentioned methods have not yet been able to form polycrystalline silicon of sufficiently high quality.
【０００７】そこで、本発明は、結晶化される非晶質シ
リコン層の形成表面に、不所望な凹凸が発生するのを防
止すると共に、高品質の多結晶シリコンを備えた光起電
力装置を製造するものである。Therefore, the present invention aims to prevent the formation of undesirable irregularities on the surface of an amorphous silicon layer to be crystallized, and to provide a photovoltaic device equipped with high quality polycrystalline silicon. It is manufactured.
【０００８】[0008]
【課題を解決するための手段】本発明の光起電力装置の
製造方法は、基板上に非晶質シリコン層を形成する工程
と、この非晶質シリコン層上に窒化シリコンまたは酸化
シリコンを分散配置した後、上記非晶質シリコン層を熱
処理して結晶化させる工程と、を備えたことを特徴とす
る。[Means for Solving the Problems] The method for manufacturing a photovoltaic device of the present invention includes a step of forming an amorphous silicon layer on a substrate, and dispersing silicon nitride or silicon oxide on the amorphous silicon layer. The method is characterized by comprising the step of heat-treating the amorphous silicon layer to crystallize it after the amorphous silicon layer is placed.
【０００９】[0009]
【作用】本発明によれば、非晶質シリコン層上に形成さ
れた窒化シリコンまたは酸化シリコンが、非晶質シリコ
ン層の結晶化に際して結晶核として作用し、結晶粒径が
適宜に制御された多結晶シリコンが形成される。[Operation] According to the present invention, silicon nitride or silicon oxide formed on the amorphous silicon layer acts as a crystal nucleus during crystallization of the amorphous silicon layer, and the crystal grain size is appropriately controlled. Polycrystalline silicon is formed.
【００１０】0010
【実施例】図１は、本発明製造方法の第１実施例を工程
順に示す断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a cross-sectional view showing a first embodiment of the manufacturing method of the present invention in order of steps.
【００１１】まず、図１（Ａ）に示す工程において、ス
テンレス等の金属板からなる基板１上に、非晶質シリコ
ン２を形成する。この非晶質シリコン層２は、周知のプ
ラズマＣＶＤ法、熱ＣＶＤ法またはスパッタリング法を
用い、リン（Ｐ）（またはボロン（Ｂ））等の不純物を
若干ドープしてｎ−型（またはｐ−型）にした状態で形
成する。なお、基板１としては、金属板に限らず、ガラ
ス等の透明板の表面に、酸化インジウム錫（ＩＴＯ）、
酸化錫（ＳｎＯ２）、酸化亜鉛（ＺｎＯ）等の透明電極
層を形成したものを用いてもよい。First, in a step shown in FIG. 1A, amorphous silicon 2 is formed on a substrate 1 made of a metal plate such as stainless steel. This amorphous silicon layer 2 is formed by slightly doping an impurity such as phosphorus (P) (or boron (B)) using a well-known plasma CVD method, thermal CVD method, or sputtering method to form an n-type (or p-type) Form it in a mold). Note that the substrate 1 is not limited to a metal plate, but can also be made of indium tin oxide (ITO), etc. on the surface of a transparent plate such as glass.
A transparent electrode layer formed of tin oxide (SnO2), zinc oxide (ZnO), or the like may be used.
【００１２】その後、非晶質シリコン層２上に、後工程
の非晶質シリコン層２の熱処理による結晶化工程におい
て、結晶核となる窒化シリコン３を分散配置するべく、
島状または線状に形成する。この窒化シリコン３は、周
知のプラズマＣＶＤ法等により、一旦非晶質シリコン層
２上の略全面に形成した後、フォトリソグラフ法を用い
て、島状または線状にパターニングして形成する。ここ
で、窒化シリコン３の径（または線幅）及び配置間隔と
しては、０．０１μｍ以下では粒径が小さすぎて、後の
非晶質シリコン層２の熱処理における結晶化工程におい
て、大きな結晶粒径が得られず、一方、１０μｍ以上で
は、窒化シリコン３以外の部分に結晶核が形成されてし
まい、これまた、大きな結晶粒径が得られなくなる。従
って、窒化シリコン３の径（または線幅）及び配置間隔
は、０．０１〜１０μｍが好ましい。[0012] Thereafter, silicon nitride 3 is dispersed on the amorphous silicon layer 2 to serve as crystal nuclei in a subsequent crystallization process by heat treatment of the amorphous silicon layer 2.
Form into islands or lines. This silicon nitride 3 is once formed on substantially the entire surface of the amorphous silicon layer 2 by a well-known plasma CVD method or the like, and then patterned into an island shape or a line shape using a photolithography method. Here, as for the diameter (or line width) and arrangement interval of silicon nitride 3, if the grain size is 0.01 μm or less, the grain size is too small, and large crystal grains will be On the other hand, if it is 10 μm or more, crystal nuclei will be formed in areas other than the silicon nitride 3, and a large crystal grain size will also not be obtained. Therefore, the diameter (or line width) and arrangement interval of silicon nitride 3 are preferably 0.01 to 10 μm.
【００１３】次に、図１（Ｂ）に示す工程において、非
晶質シリコン層２を５００〜７００℃の温度でアニール
するか、または非晶質シリコン層２表面にレーザビーム
、電子ビーム等のエネルギービームを照射することによ
り、非晶質シリコン層２を熱処理し、非晶質シリコン層
２の結晶化を行い、ｎ−型（またはｐ−型）の多結晶シ
リコン層４を形成する。斯る多結晶シリコン層４は、非
晶質シリコン層２の結晶化が、非晶質シリコン層２と窒
化シリコン３との界面に生じる結晶核を中心として、非
晶質シリコン層２の内部に進んでいくことによって形成
される。即ち、上記界面を成長核として、大きな粒径の
結晶粒を有する多結晶シリコン層４が形成される。Next, in the step shown in FIG. 1B, the amorphous silicon layer 2 is annealed at a temperature of 500 to 700° C., or the surface of the amorphous silicon layer 2 is exposed to a laser beam, an electron beam, etc. By irradiating the energy beam, the amorphous silicon layer 2 is heat-treated to crystallize the amorphous silicon layer 2 and form an n-type (or p-type) polycrystalline silicon layer 4. Such a polycrystalline silicon layer 4 is formed by crystallization of the amorphous silicon layer 2, with crystal nuclei generated at the interface between the amorphous silicon layer 2 and silicon nitride 3 being centered inside the amorphous silicon layer 2. It is formed by progress. That is, a polycrystalline silicon layer 4 having large crystal grains is formed using the interface as a growth nucleus.
【００１４】最後に、図１（Ｃ）に示す工程において、
結晶化された多結晶シリコン層４の表面に、ｐ＋型（ま
たはｎ＋型）の非晶質シリコン層５を形成する。なお、
非晶質シリコン層５に代えて、微結晶または多結晶のシ
リコン層を形成してもよい。その後、非晶質シリコン層
５上にＩＴＯ、ＳｎＯ２、ＺｎＯ等の透明電極層６を形
成する。但し、基板１が、上述の如く、透明板表面にＩ
ＴＯ、ＳｎＯ２、ＺｎＯを形成したものであれば、透明
電極層６に代えて、アルミニウム（Ａｌ）、銀（Ａｇ）
等の金属電極層を形成する。Finally, in the step shown in FIG. 1(C),
A p+ type (or n+ type) amorphous silicon layer 5 is formed on the surface of the crystallized polycrystalline silicon layer 4. In addition,
Instead of the amorphous silicon layer 5, a microcrystalline or polycrystalline silicon layer may be formed. Thereafter, a transparent electrode layer 6 made of ITO, SnO2, ZnO, etc. is formed on the amorphous silicon layer 5. However, as mentioned above, if the substrate 1 is
If TO, SnO2, or ZnO is formed, aluminum (Al) or silver (Ag) can be used instead of the transparent electrode layer 6.
Form a metal electrode layer such as
【００１５】以上の工程により、光起電力装置が完成す
る。[0015] Through the above steps, a photovoltaic device is completed.
【００１６】ところで、上述の工程において、非晶質シ
リコン層２上に形成された窒化シリコン３は、非晶質シ
リコン層２を好適に結晶化するためのものであり、多結
晶シリコン層４を形成した後は、全くの不要物であり、
更に、図１（Ｃ）に示す非晶質シリコン層５及び透明電
極層６の形成表面である多結晶シリコン層４の表面に不
所望な凹凸を生じさせる。By the way, in the above process, the silicon nitride 3 formed on the amorphous silicon layer 2 is for suitably crystallizing the amorphous silicon layer 2, and the polycrystalline silicon layer 4 is After forming, it is completely unnecessary,
Furthermore, undesired unevenness is caused on the surface of the polycrystalline silicon layer 4, which is the surface on which the amorphous silicon layer 5 and transparent electrode layer 6 shown in FIG. 1(C) are formed.
【００１７】そこで、非晶質シリコン層２の多結晶化（
即ち、多結晶シリコン層４の形成）後に、窒化シリコン
３を除去するのが好ましい。斯る窒化シリコン３の除去
によって、不所望な凹凸がなくなり、非晶質シリコン層
５及び透明電極層６の形成が容易となる。Therefore, polycrystalization of the amorphous silicon layer 2 (
That is, it is preferable to remove the silicon nitride 3 after forming the polycrystalline silicon layer 4. By removing silicon nitride 3 in this way, undesired unevenness is eliminated and formation of amorphous silicon layer 5 and transparent electrode layer 6 becomes easier.
【００１８】一方、図２は本発明の製造方法の第２実施
例を工程順に示す断面図である。On the other hand, FIG. 2 is a cross-sectional view showing a second embodiment of the manufacturing method of the present invention in the order of steps.
【００１９】図２（Ａ）に示す工程において、図１（Ａ
）に示す工程と同様にして、ガラス等の透明板表面に、
ＩＴＯ、ＳｎＯ２、ＺｎＯ等の透明電極層を形成した透
明な基板１１上に、ｎ−型の非晶質シリコン層１２と、
島状または線状の窒化シリコン１３とを形成する。In the process shown in FIG. 2(A), FIG.
) on the surface of a transparent plate such as glass,
On a transparent substrate 11 on which a transparent electrode layer of ITO, SnO2, ZnO, etc. is formed, an n-type amorphous silicon layer 12,
An island-like or linear silicon nitride 13 is formed.
【００２０】次に、図２（Ｂ）に示す工程において、非
晶質シリコン層１２上に、Ａｌ電極層１４を形成する。Next, in a step shown in FIG. 2B, an Al electrode layer 14 is formed on the amorphous silicon layer 12.
【００２１】最後に、図２（Ｃ）に示す工程において、
非晶質シリコン層１２を５００〜７００℃の温度でアニ
ールするか、またはＡｌ電極層１４上にレーザビーム、
電子ビーム等のエネルギービームを照射して、非晶質シ
リコン層１２を熱処理することにより、非晶質シリコン
層１２の結晶化を行い、ｎ−型（またはｐ−型）の多結
晶シリコン層１５を形成する。斯る多結晶シリコン層１
５は、非晶質シリコン層１２の結晶化が、非晶質シリコ
ン層１２と窒化シリコン１３との界面に生じる結晶核を
中心として、非晶質シリコン層１２の内部に進んでいく
ことによって形成される。Finally, in the step shown in FIG. 2(C),
The amorphous silicon layer 12 is annealed at a temperature of 500 to 700°C, or a laser beam is applied onto the Al electrode layer 14.
By irradiating the amorphous silicon layer 12 with an energy beam such as an electron beam and heat-treating the amorphous silicon layer 12, the amorphous silicon layer 12 is crystallized, and an n-type (or p-type) polycrystalline silicon layer 15 is formed. form. Such polycrystalline silicon layer 1
5 is formed by crystallization of the amorphous silicon layer 12 progressing into the inside of the amorphous silicon layer 12 centering on crystal nuclei generated at the interface between the amorphous silicon layer 12 and silicon nitride 13. be done.
【００２２】この結晶化時に、Ａｌ電極層１４中のＡｌ
が多結晶シリコン層１５内に拡散し、多結晶シリコン層
１５の表面領域に、ｐ型の多結晶シリコン層１６が自動
的に形成される。During this crystallization, Al in the Al electrode layer 14
diffuses into the polycrystalline silicon layer 15, and a p-type polycrystalline silicon layer 16 is automatically formed in the surface region of the polycrystalline silicon layer 15.
【００２３】こうして、ｐｎ接合を備えた多結晶シリコ
ンからなる光起電力装置が製造される。In this way, a photovoltaic device made of polycrystalline silicon and having a pn junction is manufactured.
【００２４】なお、以上の２つの実施例においては、窒
化シリコン３、１３を用いた場合について説明したが、
窒化シリコンに代えて酸化シリコンを用いることができ
、この場合も上述と全く同様にして、光起電力装置が製
造される。In the above two embodiments, the case where silicon nitride 3 and silicon nitride 13 were used was explained.
Silicon oxide can be used instead of silicon nitride, and the photovoltaic device is manufactured in exactly the same manner as described above.
【００２５】[0025]
【発明の効果】本発明によれば、基板上に非晶質シリコ
ン層を形成する工程と、この非晶質シリコン層上に窒化
シリコンまたは酸化シリコンを分散配置した後、上記非
晶質シリコン層を熱処理して結晶化させる工程と、を備
えているので、後に結晶化される非晶質シリコン層の形
成表面に、不所望な凹凸が生じることがなく、更に、高
品質の多結晶シリコン層を形成することができる。According to the present invention, after forming an amorphous silicon layer on a substrate and dispersing silicon nitride or silicon oxide on the amorphous silicon layer, Since the process includes a step of heat-treating and crystallizing the amorphous silicon layer, there is no undesirable unevenness on the surface of the amorphous silicon layer that will be crystallized later, and a high-quality polycrystalline silicon layer can be formed. can be formed.
【図１】本発明の製造方法の第１実施例を工程順に示す
断面図である。FIG. 1 is a cross-sectional view showing a first embodiment of the manufacturing method of the present invention in order of steps.
【図２】本発明の製造方法の第２実施例を工程順に示す
断面図である。FIG. 2 is a cross-sectional view showing a second embodiment of the manufacturing method of the present invention in order of steps.
Claims (3)
工程と、この非晶質シリコン層上に窒化シリコンまたは
酸化シリコンを分散配置した後、上記非晶質シリコン層
を熱処理して結晶化させる工程と、を備えたことを特徴
とする光起電力装置の製造方法。1. A step of forming an amorphous silicon layer on a substrate, dispersing silicon nitride or silicon oxide on the amorphous silicon layer, and then heat-treating the amorphous silicon layer to crystallize it. A method for manufacturing a photovoltaic device, comprising the steps of:
後に、上記窒化シリコンまたは酸化シリコンを除去する
工程を備えたことを特徴とする請求項１記載の光起電力
装置の製造方法。2. The method of manufacturing a photovoltaic device according to claim 1, further comprising the step of removing the silicon nitride or silicon oxide after the step of crystallizing the amorphous silicon layer.
前に、上記非晶質シリコン層上にＡｌ電極層を形成する
工程を備えたことを特徴とする請求項１記載の光起電力
装置の製造方法。3. The photovoltaic device according to claim 1, further comprising the step of forming an Al electrode layer on the amorphous silicon layer before the step of crystallizing the amorphous silicon layer. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136655A JPH04360518A (en) | 1991-06-07 | 1991-06-07 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136655A JPH04360518A (en) | 1991-06-07 | 1991-06-07 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04360518A true JPH04360518A (en) | 1992-12-14 |
Family
ID=15180408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3136655A Pending JPH04360518A (en) | 1991-06-07 | 1991-06-07 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04360518A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7075002B1 (en) | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
| JP2016531426A (en) * | 2013-07-24 | 2016-10-06 | リラス ゲーエムベーハーＬｉｌａｓ Ｇｍｂｈ | Method for producing solar cells, in particular silicon thin film solar cells |
-
1991
- 1991-06-07 JP JP3136655A patent/JPH04360518A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7075002B1 (en) | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
| JP2016531426A (en) * | 2013-07-24 | 2016-10-06 | リラス ゲーエムベーハーＬｉｌａｓ Ｇｍｂｈ | Method for producing solar cells, in particular silicon thin film solar cells |
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