JPH04355922A - Polyimide hardening device - Google Patents
Polyimide hardening deviceInfo
- Publication number
- JPH04355922A JPH04355922A JP5271391A JP5271391A JPH04355922A JP H04355922 A JPH04355922 A JP H04355922A JP 5271391 A JP5271391 A JP 5271391A JP 5271391 A JP5271391 A JP 5271391A JP H04355922 A JPH04355922 A JP H04355922A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- exhaust
- heating furnace
- pipe
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004642 Polyimide Substances 0.000 title claims description 40
- 229920001721 polyimide Polymers 0.000 title claims description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 58
- 239000007789 gas Substances 0.000 claims abstract description 52
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000012159 carrier gas Substances 0.000 claims abstract description 15
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、基板上のポリイミドを
加熱して硬化させるポリイミド硬化装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide curing apparatus for heating and curing polyimide on a substrate.
【0002】0002
【従来の技術】近年、半導体素子の最終保護膜或いは液
晶の配向膜として有機物である感光性ポリイミドが多用
されつつある。その理由は、感光性ポリイミドは、従来
のポリイミドに比べて基板上のパターン形成がフォトレ
ジストと同様の方法で形成できるので、パターン形成工
程が簡素化できるためである。2. Description of the Related Art In recent years, photosensitive polyimide, which is an organic material, has been increasingly used as a final protective film for semiconductor devices or as an alignment film for liquid crystals. The reason for this is that compared to conventional polyimide, photosensitive polyimide can form a pattern on a substrate in the same manner as photoresist, so the pattern formation process can be simplified.
【0003】この場合、基板上にパターン形成された感
光性ポリイミドを加熱して硬化させる装置として、従来
から図2に示すようなポリイミド硬化装置が用いられて
きた。In this case, a polyimide curing apparatus as shown in FIG. 2 has conventionally been used as an apparatus for heating and curing the photosensitive polyimide patterned on the substrate.
【0004】このポリイミド硬化装置は、基板上のポリ
イミドを加熱して硬化させるためメインヒータ4を備え
た加熱炉本体1と、加熱炉本体1内に収納されポリイミ
ドが塗布された基板を保持する棚状のボード治具5と、
ボード治具5を保持するボード支持部材17と、加熱炉
本体1の内部で開口しキャリアガスを炉内に導入するた
めのガス導入管16と、加熱炉本体1の下部に開口し炉
内で発生した反応生成ガスをキャリアガスと共に炉外へ
排出するため、加熱炉本体1の下部の排気口3から炉外
上方へ延びる主排気管13とを備えている。This polyimide curing apparatus includes a heating furnace main body 1 equipped with a main heater 4 for heating and curing polyimide on a substrate, and a shelf housed in the heating furnace main body 1 for holding a substrate coated with polyimide. a shaped board jig 5;
A board support member 17 that holds the board jig 5, a gas introduction pipe 16 that opens inside the heating furnace main body 1 and introduces carrier gas into the furnace, and a gas introduction pipe 16 that opens at the bottom of the heating furnace main body 1 and introduces the carrier gas into the furnace. In order to discharge the generated reaction gas together with the carrier gas to the outside of the furnace, a main exhaust pipe 13 is provided which extends from the exhaust port 3 at the lower part of the heating furnace main body 1 to the outside of the furnace and upwardly.
【0005】[0005]
【発明が解決しようとする課題】しかるに、前記構造の
ポリイミド硬化装置においては、ポリイミドが硬化する
際に発生する反応生成ガス(アウトガス)が、加熱炉本
体1の内部における温度の低い部分つまり加熱炉本体1
の下部15、加熱炉本体1の下端開口部10近傍及びガ
ス導入管16の下部に付着するため、数回のバッチ処理
毎に、加熱炉本体1、ガス導入管16、ボード治具5及
びボード支持部材17を洗浄しなければならないという
問題があった。[Problems to be Solved by the Invention] However, in the polyimide curing apparatus having the above structure, the reaction product gas (outgas) generated when polyimide is cured is absorbed into the lower temperature part of the heating furnace body 1, that is, the heating furnace. Main body 1
15, the vicinity of the lower end opening 10 of the heating furnace body 1, and the lower part of the gas introduction pipe 16. There was a problem in that the support member 17 had to be cleaned.
【0006】また、反応生成ガスの加熱炉本体1への付
着量と半導体基板におけるポリイミド開口部への付着量
には相関関係があり、加熱炉本体1への付着量が多くな
るにつれて半導体基板におけるポリイミド開口部への付
着量も多くなるという傾向がある。このため、例えば、
図3に示すように、所定の工程を完了した半導体基板1
8上に最終保護膜として感光性ポリイミド19を使用す
る場合、ポリイミド開口部となる半導体基板18上に形
成されたアルミニウムよりなるボンディングパッド20
の表面にポリイミドの反応生成ガスが付着するという問
題がある。このため、その後の組立工程におけるワイヤ
ボンディング時に、ボンディングワイヤとボンディング
パッド間の合金形成が付着物21により阻害されてボン
ディング不良が発生するという問題があった。[0006] Furthermore, there is a correlation between the amount of reaction product gas adhering to the heating furnace body 1 and the amount adhering to the polyimide opening in the semiconductor substrate. There is also a tendency for the amount of adhesion to polyimide openings to increase. For this reason, for example,
As shown in FIG. 3, a semiconductor substrate 1 that has undergone a predetermined process
When a photosensitive polyimide 19 is used as a final protective film on the semiconductor substrate 18, a bonding pad 20 made of aluminum is formed on the semiconductor substrate 18, which becomes the polyimide opening.
There is a problem that reaction product gas of polyimide adheres to the surface of the polyimide. Therefore, during wire bonding in the subsequent assembly process, there was a problem in that the deposits 21 inhibited alloy formation between the bonding wire and the bonding pad, resulting in defective bonding.
【0007】また、ポリイミドを硬化させる際に発生す
る反応生成ガスを主排気管13に排出する場合、該主排
気管13に反応生成ガスが付着し、長期の使用によって
主排気管13がつまるという問題があった。Furthermore, when the reaction product gas generated when curing polyimide is discharged into the main exhaust pipe 13, the reaction product gas adheres to the main exhaust pipe 13 and the main exhaust pipe 13 becomes clogged after long-term use. There was a problem.
【0008】さらに、通常、共通の主排気管13には前
記ポリイミド硬化装置を初めとする複数の装置の排気口
が接続されるが、各装置の稼働状態によって排気圧にば
らつきが発生するため、ポリイミド硬化装置からの反応
生成ガスの排出状態もばらつくことになる。このため、
前述の加熱炉本体1における炉内付着量がばらつきメン
テナンス頻度を一定に管理できなくなるという問題、及
び半導体基板におけるポリイミド開口部への付着量がば
らつき、再現性が不安定な状態で前述のワイヤーボンデ
ィング不良が発生するという問題があった。Further, normally, the exhaust ports of a plurality of devices including the polyimide curing device are connected to the common main exhaust pipe 13, but since the exhaust pressure varies depending on the operating state of each device, The state of discharge of reaction product gas from the polyimide curing device also varies. For this reason,
The above-mentioned problem is that the amount of adhesion inside the heating furnace body 1 varies, making it impossible to maintain a constant maintenance frequency, and the amount of adhesion to the polyimide opening in the semiconductor substrate varies, making the reproducibility unstable. There was a problem that defects occurred.
【0009】本発明は前記問題点を一挙に解決し、加熱
炉本体、ガス導入管及びボード保持具等に対する洗浄回
数を低減することができると共に、基板に対する反応生
成ガスの再付着を減少させることができ、さらに排気系
におけるクリーニング頻度を略一定にできるようにする
ことを目的とする。[0009] The present invention solves the above-mentioned problems at once, and can reduce the number of times the heating furnace main body, gas introduction pipe, board holder, etc. are cleaned, and also reduce re-adhesion of reaction product gas to the substrate. The purpose of this invention is to make it possible to maintain a substantially constant cleaning frequency in the exhaust system.
【0010】0010
【課題を解決するための手段】前記の目的を達成するた
め、本発明に係るポリイミド硬化装置を、基板上のポリ
イミドを加熱して硬化させるための加熱炉本体と、該加
熱炉本体の上部に開口しキャリアガスを炉内に導入する
ための導入口と、前記加熱炉本体の下部に開口し炉内で
発生した反応生成ガスを前記キャリアガスと共に炉外へ
排出するための排気口と、該排気口から炉外方向へ延び
る排気管と、該排気管の途中部に設けられ該排気管を流
通する反応生成ガスを液化して排出するためのトラップ
と、前記加熱炉本体の下部を加熱して炉内下部を保温す
る炉内下部保温手段と、前記排気管における前記トラッ
プよりも上流側を加熱して管内を保温する管内保温手段
と、前記排気管における前記トラップよりも下流側に設
けられ排気圧を略一定に保つ圧力調整手段とを備えてい
る構成とするものである。[Means for Solving the Problems] In order to achieve the above object, a polyimide curing apparatus according to the present invention is provided with a heating furnace main body for heating and curing polyimide on a substrate, and an upper part of the heating furnace main body. an inlet opening to introduce carrier gas into the furnace; an exhaust port opening at the bottom of the heating furnace body to discharge reaction product gas generated in the furnace to the outside of the furnace together with the carrier gas; An exhaust pipe extending from the exhaust port to the outside of the furnace, a trap provided in the middle of the exhaust pipe for liquefying and discharging the reaction product gas flowing through the exhaust pipe, and a trap for heating the lower part of the heating furnace main body. an in-furnace lower part heat-retaining means for keeping the lower part of the furnace warm by heating the inside of the pipe by heating an upstream side of the trap in the exhaust pipe to keep the inside of the pipe warm; The exhaust gas is configured to include a pressure adjusting means for keeping the exhaust pressure substantially constant.
【0011】[0011]
【作用】上記の構成により、キャリアガスを炉内に導入
するための導入口を加熱炉本体の上部で開口するよう設
けたため、キャリアガスを炉内に導入するためのガス導
入管を加熱炉本体の内部に設ける必要がないので、ポリ
イミドの硬化時に発生する反応生成ガスが前記ガス導入
管に付着するという問題がない。[Operation] With the above configuration, the introduction port for introducing the carrier gas into the furnace is provided to open at the top of the heating furnace body, so the gas introduction pipe for introducing the carrier gas into the furnace is connected to the heating furnace body. Since there is no need to provide the gas inlet tube inside the tube, there is no problem of reaction product gas generated during curing of polyimide adhering to the gas introduction tube.
【0012】また、排気口から炉外方向へ延びる排気管
の途中部に反応生成ガスを液化して排出するためのトラ
ップと、加熱炉本体の下部を加熱して炉内下部を保温す
る炉内下部保温手段と、排気管におけるトラップよりも
上流部を加熱して管内を保温する管内保温手段とを設け
たため、前述の反応生成ガスは、加熱炉本体の下部、排
気口近傍部及び排気管におけるトラップよりも上流部で
液化することなくトラップに到達し、該トラップで一気
に液化される。[0012] Furthermore, a trap for liquefying and discharging the reaction product gas is provided in the middle of the exhaust pipe extending from the exhaust port toward the outside of the furnace, and a trap inside the furnace for heating the lower part of the heating furnace body and keeping the lower part of the furnace warm. Since the lower part heat insulating means and the in-pipe heat insulating means heat the upstream part of the exhaust pipe than the trap to keep the inside of the pipe warm, the above-mentioned reaction product gas is absorbed into the lower part of the heating furnace main body, near the exhaust port, and in the exhaust pipe. It reaches the trap without being liquefied upstream of the trap, and is liquefied at once in the trap.
【0013】さらに、排気管におけるトラップよりも下
流側に排気圧を略一定に保つ圧力調整手段を設けたため
、排気圧が略一定になり反応生成ガスの排出状態にバラ
ツキが生じなくなるので、排気系における反応生成ガス
の付着量が略一定になる。Furthermore, since a pressure regulating means for keeping the exhaust pressure substantially constant is provided downstream of the trap in the exhaust pipe, the exhaust pressure becomes substantially constant and there is no variation in the discharge state of the reaction product gas, so the exhaust system The amount of reaction product gas attached becomes approximately constant.
【0014】[0014]
【実施例】以下、本発明の一実施例を図面に基づき説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【0015】図1は本発明の一実施例に係るポリイミド
硬化装置の断面構造を示し、同図において、1は石英チ
ューブよりなる縦型の加熱炉本体であって、該加熱炉本
体1の上部及び下部を除く炉壁の外周にはメインヒータ
4が設けられている。加熱炉本体1の内部には棚状のボ
ード治具5がボード支持部材17によって保持されてお
り、該ボード治具5の棚には、パターン形成されイミド
化していない感光ポリイミドを有する半導体基板6が各
々セットされている。FIG. 1 shows a cross-sectional structure of a polyimide curing apparatus according to an embodiment of the present invention. In the figure, 1 is a vertical heating furnace body made of a quartz tube, and the upper part of the heating furnace body 1 is a vertical heating furnace body made of a quartz tube. A main heater 4 is provided on the outer periphery of the furnace wall except for the lower part. Inside the heating furnace body 1, a shelf-shaped board jig 5 is held by a board support member 17. On the shelf of the board jig 5, a semiconductor substrate 6 having a patterned and non-imidized photosensitive polyimide is mounted. are set respectively.
【0016】本実施例の特徴として、加熱炉本体1の半
球状の上壁部の中央には、キャリアガス例えばN2 ガ
スを炉内に導入するためのガス導入口2が設けられてい
ると共に、加熱炉本体1の周壁の下端部には、炉内で発
生した反応生成ガスを前記キャリアガスと共に炉外へ排
出するための排気口3が設けられており、該排気口3に
は水平方向に延びる横向き排気管9の一端が取り付けら
れている。横向き排気管9の他端には上下方向に延びる
水冷トラップ11の上部が連設されており、該水冷トラ
ップ11の下部には連通管22の一端が接続されている
。
そして連通管22の他端には、排気圧を略一定に保つ圧
力調整手段としてのオートダンパー14を介して、上下
方向に延びる主排気管13が接続されている。As a feature of this embodiment, a gas inlet 2 is provided in the center of the hemispherical upper wall of the heating furnace body 1 for introducing a carrier gas, for example, N2 gas into the furnace. An exhaust port 3 is provided at the lower end of the peripheral wall of the heating furnace body 1 for discharging the reaction product gas generated in the furnace to the outside of the furnace together with the carrier gas. One end of an extending horizontal exhaust pipe 9 is attached. An upper part of a water-cooled trap 11 extending in the vertical direction is connected to the other end of the horizontal exhaust pipe 9, and one end of a communication pipe 22 is connected to the lower part of the water-cooled trap 11. A main exhaust pipe 13 extending in the vertical direction is connected to the other end of the communication pipe 22 via an auto damper 14 that serves as a pressure adjustment means for keeping the exhaust pressure substantially constant.
【0017】さらに、本実施例の特徴として、メインヒ
ータ4の下側には、加熱炉本体1の下部を加熱して炉内
下部の温度を一定に保つ炉内下部保温手段としての第1
サブヒータ12Aが設けられていると共に、横向き排気
管9の外周には、排気管におけるトラップよりも上流部
を加熱して管内の温度を一定に保つ管内保温手段として
の第2サブヒータ12Bが設けられている。Furthermore, as a feature of this embodiment, a first heater is provided below the main heater 4 as a lower part of the furnace heat insulating means to heat the lower part of the heating furnace body 1 and keep the temperature of the lower part of the furnace constant.
A sub-heater 12A is provided, and a second sub-heater 12B is provided on the outer periphery of the horizontal exhaust pipe 9 as an internal heat-insulating means for heating the upstream portion of the exhaust pipe from the trap to keep the temperature inside the pipe constant. There is.
【0018】前記構造のポリイミド硬化装置において、
メインヒータ4に通電すると、加熱炉本体1の内部は約
400℃に昇温された後、約400℃に保持される。こ
れにより半導体基板6上のポリイミドのイミド化と感光
基の離脱化が行われ、これに伴って反応生成ガス(アウ
トガス)7が発生する。この反応生成ガス7は、ガス導
入口2から導入されるキャリアガス8と共に排気口3か
ら横向き排気管9を通って放出される。[0018] In the polyimide curing apparatus having the above structure,
When the main heater 4 is energized, the temperature inside the heating furnace body 1 is raised to about 400°C, and then maintained at about 400°C. As a result, polyimide on the semiconductor substrate 6 is imidized and photosensitive groups are removed, and a reaction product gas (outgas) 7 is generated accordingly. This reaction product gas 7 is discharged from the exhaust port 3 through the horizontal exhaust pipe 9 together with the carrier gas 8 introduced from the gas inlet 2 .
【0019】従来構造のポリイミド硬化装置では、均熱
領域からはずれた位置特に排気口3近傍においては、反
応生成ガス7の温度が下がり、反応生成ガス7が液化し
て加熱炉本体1の下端開口部10、排気口3の近傍部及
び横向き排気管9の内面に付着するという問題があった
が、本実施例では、第1及び第2サブヒータ12A,1
2Bが設けられているために、反応生成ガス7は加熱炉
本体1の下部及び横向き排気管9の内部で液化すること
なく、水冷トラップ11に到達する。そして、水冷トラ
ップ11で一気に冷却されて該水冷トラップ11の内壁
に付着する。In the polyimide curing apparatus of the conventional structure, the temperature of the reaction product gas 7 decreases at a location away from the soaking area, particularly near the exhaust port 3, and the reaction product gas 7 liquefies, opening the lower end of the heating furnace body 1. However, in this embodiment, the first and second sub-heaters 12A, 1
2B, the reaction product gas 7 reaches the water-cooled trap 11 without being liquefied in the lower part of the heating furnace main body 1 and inside the horizontal exhaust pipe 9. Then, it is cooled all at once by the water-cooled trap 11 and adheres to the inner wall of the water-cooled trap 11.
【0020】また、本実施例では、連通管22と主排気
管13との間にオートダンパー14が介設されているた
め、反応生成ガスの排出状態にバラツキが生じず、排気
系における付着量が略一定になるので、排気系のクリー
ニング頻度を略一定にすることができる。Furthermore, in this embodiment, since the auto damper 14 is interposed between the communication pipe 22 and the main exhaust pipe 13, there is no variation in the discharge state of the reaction product gas, and the amount of adhesion in the exhaust system is reduced. Since this becomes approximately constant, the cleaning frequency of the exhaust system can be kept approximately constant.
【0021】さらに、ガス導入口2を加熱炉本体1の上
壁部に設けたため、従来のように、加熱炉本体1の内部
にガス導入管を配設する必要がないので、ガス導入管の
外壁に反応生成ガスが付着するという問題は生じない。Furthermore, since the gas inlet 2 is provided on the upper wall of the heating furnace main body 1, there is no need to arrange a gas inlet pipe inside the heating furnace main body 1 as in the conventional case. There is no problem of reaction product gas adhering to the outer wall.
【0022】[0022]
【発明の効果】以上説明したように、本発明に係るポリ
イミド硬化装置によると、キャリアガスを炉内に導入す
るための導入口を加熱炉本体の上部で開口せしめたため
、ガス導入管を加熱炉本体内に設ける必要がないので、
反応生成ガスがガス導入管に付着するという問題を解消
することができる。また、反応生成ガスを液化して排出
するためのトラップと、加熱炉本体の下部を加熱して炉
内下部を保温する炉内下部保温手段と、排気管における
トラップよりも上流側を加熱して管内を保温する管内保
温手段とを設けたため、反応生成ガスは、加熱炉本体の
下部、排気口近傍部及び排気管におけるトラップよりも
上流側に付着し難くなる。As explained above, according to the polyimide curing apparatus according to the present invention, the introduction port for introducing the carrier gas into the furnace is opened at the upper part of the heating furnace main body, so that the gas introduction pipe is connected to the heating furnace. There is no need to install it inside the main body, so
It is possible to eliminate the problem of reaction product gas adhering to the gas introduction pipe. In addition, there is a trap for liquefying and discharging the reaction product gas, a means for heating the lower part of the furnace body to keep the lower part of the furnace warm, and a part of the exhaust pipe upstream of the trap that heats the lower part of the furnace. Since the tube heat insulating means for keeping the inside of the tube warm is provided, the reaction product gas is less likely to adhere to the lower part of the heating furnace main body, the vicinity of the exhaust port, and the upstream side of the trap in the exhaust pipe.
【0023】このため、本発明によると、従来の装置に
比べて、加熱炉本体及びボード保持具等に対する洗浄回
数を低減することができると共に、基板に対する反応生
成ガスの再付着を減少させることができ高品質なポリイ
ミドパターンを形成することが可能になる。Therefore, according to the present invention, compared to conventional apparatuses, it is possible to reduce the number of times the heating furnace main body, board holder, etc. are cleaned, and it is also possible to reduce re-adhesion of reaction product gas to the substrate. This makes it possible to form high-quality polyimide patterns.
【0024】さらに、本発明によると、排気管における
トラップよりも下流側に排気圧を略一定に保つ圧力調整
手段を設けたため、反応生成ガスの排出状態にバラツキ
が生じなくなり、排気系における反応生成ガスの付着量
が略一定になるので、排気系におけるクリーニング頻度
を一定にすることができる。Furthermore, according to the present invention, since the pressure adjusting means for keeping the exhaust pressure substantially constant is provided downstream of the trap in the exhaust pipe, there is no variation in the discharge state of the reaction product gas, and the reaction product in the exhaust system is Since the amount of gas attached is approximately constant, the frequency of cleaning in the exhaust system can be kept constant.
【図1】本発明の一実施例に係るポリイミド硬化装置の
構成を示す断面図である。FIG. 1 is a sectional view showing the configuration of a polyimide curing device according to an embodiment of the present invention.
【図2】従来のポリイミド硬化装置の構成を示す断面図
である。FIG. 2 is a sectional view showing the configuration of a conventional polyimide curing device.
【図3】感光性ポリイミドが保護膜としてパターニング
されたボンディングパッドを有する半導体基板に反応生
成ガスが付着した状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state in which a reaction product gas is attached to a semiconductor substrate having a bonding pad patterned with photosensitive polyimide as a protective film.
1…加熱炉本体
2…ガス導入口(導入口)
3…排気口
4…メインヒータ
5…ボード治具
6…感光性ポリイミド付き基板
7…反応生成ガス
8…キャリアガス
9…横向き排気管
10…下端開口部
11…水冷トラップ(トラップ)
12A…第1サブヒータ(炉内下部保温手段)12B…
第2サブヒータ(管内保温手段)13…主排気管
14…オートダンパー(圧力調整手段)15…加熱炉本
体の下部
16…ガス導入管
17…ボード支持部材
18…半導体基板
19…感光性ポリイミド
20…ボンディングパッド
21…付着物1...Heating furnace body 2...Gas inlet (inlet) 3...Exhaust port 4...Main heater 5...Board jig 6...Substrate with photosensitive polyimide 7...Reaction product gas 8...Carrier gas 9...Horizontal exhaust pipe 10... Lower end opening 11...water-cooled trap (trap) 12A...first sub-heater (furnace lower heat retention means) 12B...
Second sub-heater (pipe heat retention means) 13...Main exhaust pipe 14...Auto damper (pressure adjustment means) 15...Lower part of heating furnace main body 16...Gas introduction pipe 17...Board support member 18...Semiconductor substrate 19...Photosensitive polyimide 20... Bonding pad 21...attached matter
Claims (1)
せるための加熱炉本体と、該加熱炉本体の上部に開口し
キャリアガスを炉内に導入するための導入口と、前記加
熱炉本体の下部に開口し炉内で発生した反応生成ガスを
前記キャリアガスと共に炉外へ排出するための排気口と
、該排気口から炉外方向へ延びる排気管と、該排気管の
途中部に設けられ該排気管を流通する反応生成ガスを液
化して排出するためのトラップと、前記加熱炉本体の下
部を加熱して炉内下部を保温する炉内下部保温手段と、
前記排気管における前記トラップよりも上流側を加熱し
て管内を保温する管内保温手段と、前記排気管における
前記トラップよりも下流側に設けられ排気圧を略一定に
保つ圧力調整手段とを備えていることを特徴とするポリ
イミド硬化装置。1. A heating furnace body for heating and curing polyimide on a substrate; an inlet opening at the top of the heating furnace body for introducing a carrier gas into the furnace; an exhaust port that opens at the bottom and discharges the reaction product gas generated in the furnace together with the carrier gas to the outside of the furnace; an exhaust pipe that extends from the exhaust port toward the outside of the furnace; and an exhaust pipe that is provided in the middle of the exhaust pipe. a trap for liquefying and discharging the reaction product gas flowing through the exhaust pipe; a lower part of the furnace heating means for heating the lower part of the heating furnace body to keep the lower part of the furnace warm;
In-pipe heat retention means for heating an area upstream of the trap in the exhaust pipe to keep the inside of the pipe warm; and pressure adjustment means provided downstream of the trap in the exhaust pipe for keeping the exhaust pressure substantially constant. A polyimide curing device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3052713A JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3052713A JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04355922A true JPH04355922A (en) | 1992-12-09 |
JP2996524B2 JP2996524B2 (en) | 2000-01-11 |
Family
ID=12922548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3052713A Expired - Fee Related JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2996524B2 (en) |
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US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
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JP2020532106A (en) * | 2017-08-18 | 2020-11-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Annealing chamber under high pressure and high temperature |
US10920315B2 (en) | 2014-03-06 | 2021-02-16 | Applied Materials, Inc. | Plasma foreline thermal reactor system |
US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
US11361978B2 (en) | 2018-07-25 | 2022-06-14 | Applied Materials, Inc. | Gas delivery module |
US11527421B2 (en) | 2017-11-11 | 2022-12-13 | Micromaterials, LLC | Gas delivery system for high pressure processing chamber |
US11581183B2 (en) | 2018-05-08 | 2023-02-14 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US11610773B2 (en) | 2017-11-17 | 2023-03-21 | Applied Materials, Inc. | Condenser system for high pressure processing system |
US11694912B2 (en) | 2017-08-18 | 2023-07-04 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US11705337B2 (en) | 2017-05-25 | 2023-07-18 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US11749555B2 (en) | 2018-12-07 | 2023-09-05 | Applied Materials, Inc. | Semiconductor processing system |
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-
1991
- 1991-03-18 JP JP3052713A patent/JP2996524B2/en not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
JP2008108983A (en) * | 2006-10-26 | 2008-05-08 | Nuflare Technology Inc | Vapor phase growth apparatus and vapor phase growth method |
US10920315B2 (en) | 2014-03-06 | 2021-02-16 | Applied Materials, Inc. | Plasma foreline thermal reactor system |
US11705337B2 (en) | 2017-05-25 | 2023-07-18 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US11694912B2 (en) | 2017-08-18 | 2023-07-04 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP2020532106A (en) * | 2017-08-18 | 2020-11-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Annealing chamber under high pressure and high temperature |
US11462417B2 (en) | 2017-08-18 | 2022-10-04 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US11469113B2 (en) | 2017-08-18 | 2022-10-11 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
US11527421B2 (en) | 2017-11-11 | 2022-12-13 | Micromaterials, LLC | Gas delivery system for high pressure processing chamber |
US11756803B2 (en) | 2017-11-11 | 2023-09-12 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US11610773B2 (en) | 2017-11-17 | 2023-03-21 | Applied Materials, Inc. | Condenser system for high pressure processing system |
US11881411B2 (en) | 2018-03-09 | 2024-01-23 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
US11581183B2 (en) | 2018-05-08 | 2023-02-14 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US11361978B2 (en) | 2018-07-25 | 2022-06-14 | Applied Materials, Inc. | Gas delivery module |
US11749555B2 (en) | 2018-12-07 | 2023-09-05 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
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