JPH0435076A - Magnetoresistance element and manufacture thereof - Google Patents
Magnetoresistance element and manufacture thereofInfo
- Publication number
- JPH0435076A JPH0435076A JP2139979A JP13997990A JPH0435076A JP H0435076 A JPH0435076 A JP H0435076A JP 2139979 A JP2139979 A JP 2139979A JP 13997990 A JP13997990 A JP 13997990A JP H0435076 A JPH0435076 A JP H0435076A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferromagnetic thin
- protective film
- substrate
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 62
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 9
- 239000000057 synthetic resin Substances 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 7
- 229920001721 polyimide Polymers 0.000 claims abstract description 7
- 229920006122 polyamide resin Polymers 0.000 claims abstract description 6
- 239000009719 polyimide resin Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 229920002614 Polyether block amide Polymers 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract 5
- 229910020598 Co Fe Inorganic materials 0.000 abstract 1
- 229910002519 Co-Fe Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 238000001514 detection method Methods 0.000 description 8
- 230000035939 shock Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、磁気抵抗素子及びその製造方法に関し、更に
詳しくは、磁気エンコーグ用の保護膜で被覆された磁気
抵抗素子及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magnetoresistive element and a method for manufacturing the same, and more particularly to a magnetoresistive element coated with a protective film for magnetic encoding and a method for manufacturing the same.
（従来の技術）
従来、磁気抵抗素子は、第２図に示される構造になって
いる。すなわち、ガラス、アルミナなどのセラミックス
などの基板」二に、Ｎｉ−Ｆｅ合金、Ｎ ｉ −Ｃｏ合
金などからなる強磁性薄ｌＩ＠２が形成され、その強磁
性薄膜２の」二に保護膜３が形成されている。保護膜３
としては、ケイ素酸化物をＣＶＤ法、スパッタリングな
どによって形成された１０〜３０１１ｍの膜厚のケイ素
酸化物層、あるいは、ポリイミド樹脂、エポキシ樹脂ま
たはポリアミド樹脂などの非透水性樹脂からなる膜厚５
〜１０μｍの薄膜が一般に広（用いられている。そして
強磁性薄膜２の端部には、半田４によりリード線５が接
続され、半田４による取付部は樹脂６で被覆されている
。(Prior Art) Conventionally, a magnetoresistive element has a structure shown in FIG. That is, a ferromagnetic thin lI@2 made of Ni-Fe alloy, Ni-Co alloy, etc. is formed on a substrate made of glass, ceramics such as alumina, etc., and a protective film 3 is formed on the ferromagnetic thin film 2. is formed. Protective film 3
For example, a silicon oxide layer with a thickness of 10 to 3011 m formed by CVD or sputtering of silicon oxide, or a film with a thickness of 5 m made of non-water permeable resin such as polyimide resin, epoxy resin or polyamide resin.
A thin film of ~10 .mu.m is generally used. Lead wires 5 are connected to the ends of the ferromagnetic thin film 2 with solder 4, and the parts to which the solder 4 is attached are covered with resin 6.
（発明が解決しようとする問題点）
しかしながら、ケイ素酸化物からなる保護膜３には、微
細なりラックやピンホールが存在するため、これらのク
ラックやピンホールを通して水分が侵入し、Ｎｉ−Ｃｏ
合金などからなる強磁性薄膜２が腐食されるという問題
があった。このため従来では保護膜３の膜厚な１０〜３
０μｍに厚くして微細なりラックやピンホールを減少さ
せて耐湿性を向上させることが行われているが、クラッ
クやピンホールを完全になくすことはできず依然として
水分により強磁性薄膜２が腐食されるという問題があっ
た。(Problems to be Solved by the Invention) However, since the protective film 3 made of silicon oxide has minute racks and pinholes, moisture enters through these cracks and pinholes, and the Ni-Co
There was a problem in that the ferromagnetic thin film 2 made of an alloy or the like was corroded. For this reason, in the past, the thickness of the protective film 3 was 10 to 3
Although attempts have been made to increase the thickness to 0 μm to reduce minute racks and pinholes to improve moisture resistance, cracks and pinholes cannot be completely eliminated and the ferromagnetic thin film 2 is still corroded by moisture. There was a problem that
また、保護膜３の膜厚を厚くすることは、強磁性薄膜２
と検知しようとする発磁体との距離が広がることになり
、検出出力が低下したり、金属からなる強磁性薄膜２と
セラミックスからなる基板１や保護膜３とは熱膨張率が
大きく異なるので熱衝撃により基板や保護膜３にクラッ
クが発生し易くなるなどの問題もあった。In addition, increasing the thickness of the protective film 3 means that the ferromagnetic thin film 2
This increases the distance between the magnet and the magnet to be detected, resulting in a decrease in detection output.The ferromagnetic thin film 2 made of metal and the substrate 1 and protective film 3 made of ceramics have significantly different coefficients of thermal expansion. There was also a problem that cracks were likely to occur in the substrate and the protective film 3 due to impact.
また、ポリイミド樹脂、エポキシ樹脂またはボッアミド
樹脂などの非透水性樹脂からなる保護膜３を強磁性薄膜
２上に形成させる場合には、大気中で樹脂を塗布するた
め、強磁性薄膜２上に吸着した水分子が樹脂により封入
され、その水分子によりまたは樹脂中に微量台まれる水
により、強磁性薄膜２が腐食されるという問題があった
。In addition, when forming the protective film 3 made of water-impermeable resin such as polyimide resin, epoxy resin, or boamide resin on the ferromagnetic thin film 2, since the resin is applied in the atmosphere, it is adsorbed onto the ferromagnetic thin film 2. There is a problem in that the ferromagnetic thin film 2 is corroded by the water molecules or by a small amount of water contained in the resin.
本発明は、上記問題点を解決し、耐湿性に優れ、保護膜
の膜厚を薄くすることによって検出出力を増大し、熱衝
撃によるクラックが発生しない磁気抵抗素子及びその製
造方法を提供することを目的とする。The present invention solves the above-mentioned problems, and provides a magnetoresistive element that has excellent moisture resistance, increases detection output by reducing the thickness of the protective film, and does not generate cracks due to thermal shock, and a method for manufacturing the same. With the goal.
（問題点を解決するだめの手段）
本発明の磁気抵抗素子は、基板と、該基板上に形成され
た強磁性薄膜と、該強磁性薄膜上に形成されたケイ素酸
化物（Ｓ ｉ Ｏ、、ただし０．５≦ｘ≦２）からなる
第一保護膜と、該第一保護膜上に形成された合成樹脂か
らなる第二保護膜とからなることを特徴とする。(Means for Solving the Problems) The magnetoresistive element of the present invention includes a substrate, a ferromagnetic thin film formed on the substrate, and a silicon oxide (S i O, , provided that 0.5≦x≦2), and a second protective film made of a synthetic resin formed on the first protective film.
本発明の磁気抵抗素子の製造方法は、強磁性薄膜が形成
された基板を真空中で１５０〜３５０℃で加熱する第一
工程と、該基板の該強磁性薄膜の上にケイ素酸化物（Ｓ
ｉ Ｏ，、ただし０．５≦ｘ≦２）の第一保護膜を形
成する第二工程と、該第一保護膜上に合成樹脂からなる
第二保護膜を形成する第三工程とからなることを特徴と
する。The method for manufacturing a magnetoresistive element of the present invention includes a first step of heating a substrate on which a ferromagnetic thin film is formed at 150 to 350°C in a vacuum, and a silicon oxide (S) layer on the ferromagnetic thin film of the substrate.
i O, where 0.5≦x≦2); a second step of forming a first protective film; and a third step of forming a second protective film made of synthetic resin on the first protective film. It is characterized by
本発明の磁気抵抗素子を第１図に基づいて説明する。ガ
ラス、アルミナなどのセラミックスなどからなる基板１
１上に、Ｎｉ−Ｆｅ合金、Ｃｏ−Ｆｅ合金などからなる
強磁性薄膜１２が形成されている。強磁性薄膜１２の端
部には、半田１４によりリード線１３が接続され、半田
１４による取付部は、樹脂で被覆されている。強磁性薄
膜１２の上には、ケイ素酸化物（Ｓ ｉ Ｏ、、ただし
０．５≦ｘ≦２）からなる第一保護膜１５が形成され、
強磁性薄膜１２を保護する。Ｘが０．５より小さい場合
には導電性を有するのでようになり、２より大きい場合
には酸素過剰となり好ましくない。好ましくは０．８≦
ｘ≦１．５である。The magnetoresistive element of the present invention will be explained based on FIG. Substrate 1 made of glass, ceramics such as alumina, etc.
A ferromagnetic thin film 12 made of a Ni--Fe alloy, a Co--Fe alloy, or the like is formed on the ferromagnetic film 1 . Lead wires 13 are connected to the ends of the ferromagnetic thin film 12 with solder 14, and the attachment portions with solder 14 are covered with resin. A first protective film 15 made of silicon oxide (S i O, where 0.5≦x≦2) is formed on the ferromagnetic thin film 12.
Protects the ferromagnetic thin film 12. If X is less than 0.5, the material has electrical conductivity, and if it is larger than 2, oxygen becomes excessive, which is not preferable. Preferably 0.8≦
x≦1.5.
また、第一保護膜Ｉ５の膜厚としては０．１〜１０μｍ
が好ましい。膜厚が０．１μｍより薄い場合には薄すぎ
て水分子が自由に透過するようになり、１０μｍより厚
い場合には強磁性薄膜１２と発磁体との距離が太き（な
るからである。Further, the thickness of the first protective film I5 is 0.1 to 10 μm.
is preferred. If the film thickness is less than 0.1 μm, it is too thin and water molecules can freely pass through it, and if it is thicker than 10 μm, the distance between the ferromagnetic thin film 12 and the magnetizing body becomes large.
更に好ましくは０．５〜２ｕｍである。More preferably, it is 0.5 to 2 um.
また第一保護層１５の上には、ポリイミド樹脂、エポキ
シ樹脂、ポリエーテルアミド樹脂またはナイロンなどの
ポリアミド樹脂等の合成樹脂からなる第二保護膜１６が
形成され、第一保護膜１５に生じた微細なりラックやピ
ンホールを被覆する。第二保護膜１６の膜厚は１〜１０
μｍが好ましい。膜厚がｌＬＬｍより薄い場合には耐水
性が悪くなり、１０μｍより厚い場合には強磁性薄膜１
２と発磁体との距離が大きくなるからである。Further, on the first protective layer 15, a second protective film 16 made of a synthetic resin such as polyimide resin, epoxy resin, polyetheramide resin, or polyamide resin such as nylon is formed. Covers minute racks and pinholes. The thickness of the second protective film 16 is 1 to 10
μm is preferred. If the film thickness is thinner than 1LLm, the water resistance will be poor, and if it is thicker than 10 μm, the ferromagnetic thin film 1
This is because the distance between No. 2 and the magnetizing body becomes large.
更に好ましくは１．５〜５ＬＬｍである。More preferably, it is 1.5 to 5 LLm.
本発明の磁気抵抗素子は、次のようにして製造される。The magnetoresistive element of the present invention is manufactured as follows.
第一工程として、先ず、強磁性薄膜１２が形成された基
板を、真空中において１５０〜３５０°Ｃて３０〜１２
０分間加熱して強磁性薄膜１２の表面に吸着している水
分子を脱着させる。次に、第二工程として、基板１１に
ＣＶＤ法あるいはスパッタリングにより、強磁性薄膜１
２上にケイ素酸化物（Ｓ ｉ Ｏ，、ただし０．５≦ｘ
≦２）からなる膜厚０１〜１０μｍの第一保護膜１５を
形成する。As the first step, first, the substrate on which the ferromagnetic thin film 12 is formed is heated in a vacuum at 150 to 350°C for 30 to 12 hours.
The water molecules adsorbed on the surface of the ferromagnetic thin film 12 are desorbed by heating for 0 minutes. Next, as a second step, a ferromagnetic thin film 1 is deposited on the substrate 11 by CVD or sputtering.
2 on silicon oxide (S i O, where 0.5≦x
≦2) and has a thickness of 01 to 10 μm.
ＣＶＤ法によるケイ素酸化物（Ｓ １０ｘ、ただし０．
５≦ｘ≦２）からなる第一保護膜１５の製造は、第一工
程により得られた基板１１を反応炉中に載置し、ここに
原料ガスとしてシラン（Ｓ ｉ Ｈ、）と酸素（０２）
の混合ガス及びアルゴン（Ａｒ）などのキャリヤガスを
流し、反応させればよい。Silicon oxide (S 10x, but 0.
5≦x≦2), the substrate 11 obtained in the first step is placed in a reaction furnace, and silane (S i H, ) and oxygen ( 02)
What is necessary is to flow a mixed gas of and a carrier gas such as argon (Ar) to cause a reaction.
スパッタリングによるケイ素酸化物（Ｓｉｎ、、ただし
０．５≦ｘ≦２）からなる第一保護膜１５の製造は、第
一工程により得られた基板１１と蒸着原材料としてケイ
素酸化物（Ｓ ｉ Ｏｙただし０．９＜ｙ＜１．１）を
容器内の所定位置に載置した後、ｌ Ｘ Ｉ Ｏ−３〜
Ｉ Ｘ １０−７Ｔｏｒｒの圧力まで排気し、スパッタ
リングを行えばよい。スパッタ電圧は５００〜３０００
Ｖ、スパッタ電流は５０〜３００ｍＡ、時間は０．１〜
２ｈｒである。The first protective film 15 made of silicon oxide (Sin, where 0.5≦x≦2) is manufactured by sputtering using the substrate 11 obtained in the first step and silicon oxide (SiOy, but not shown) as a vapor deposition raw material. 0.9<y<1.1) at a predetermined position in the container, l X I O-3~
Sputtering may be performed by evacuation to a pressure of I.times.10.sup.-7 Torr. Sputtering voltage is 500-3000
V, sputtering current is 50~300mA, time is 0.1~
It is 2 hours.
次に、第三工程として、第二工程により得られた第一保
護膜１５上にポリイミド樹脂、エポキシ樹脂、ポリエー
テルアミド樹脂またはナイロンなどのポリアミド樹脂等
の非透水性樹脂からなる膜厚ｌ〜１０μｍの第二保護膜
１６を均一に塗布または、薄膜を接着することにより形
成すればよい。Next, as a third step, a film of a non-water permeable resin such as a polyimide resin, an epoxy resin, a polyetheramide resin, or a polyamide resin such as nylon is formed on the first protective film 15 obtained in the second step to a thickness l~ It may be formed by uniformly applying the second protective film 16 of 10 μm or by adhering a thin film.
（作用）
第一工程において、強磁性薄膜１２が形成された基板１
１を加熱することにより、強磁性薄膜１２上に吸着した
水分子を脱着させることで、従来の強磁性薄膜層１２上
に吸着された水分による強磁性薄膜層１２の腐食が防止
できる。(Function) In the first step, the substrate 1 on which the ferromagnetic thin film 12 is formed
By heating the ferromagnetic thin film 1, water molecules adsorbed on the ferromagnetic thin film 12 are desorbed, thereby preventing corrosion of the ferromagnetic thin film layer 12 due to water adsorbed on the conventional ferromagnetic thin film layer 12.
また、ポリイミド、エポキシ樹脂、ポリエーテルアミド
樹脂またはポリアミド樹脂などの非透水性樹脂からなる
第二保護膜１６を第一保護膜１５上に形成したので、第
一保護膜１５の微細なりラックやピンホールを被覆でき
るので、大気中の水分子がクラックやピンホールを通し
て侵入することはな（、強磁性薄膜１２が腐食されるこ
とはない。また、樹脂中に含まれる微量の水分により強
磁性薄膜１２が腐食されることはない。In addition, since the second protective film 16 made of a water-impermeable resin such as polyimide, epoxy resin, polyetheramide resin, or polyamide resin is formed on the first protective film 15, minute racks and pins of the first protective film 15 are formed. Since the holes can be covered, water molecules in the atmosphere will not enter through cracks or pinholes (and the ferromagnetic thin film 12 will not be corroded). 12 will not be corroded.
また、第一保護膜１５の膜厚と第二保護膜１６の膜厚を
従来の磁気抵抗素子の保護膜の膜厚をより薄くしても従
来以上の耐湿性が得られるので、強磁性薄膜１２と検知
しようとする発磁体との距離が短くなり、大きな検出出
力が得られるようになる。Further, even if the thickness of the first protective film 15 and the second protective film 16 are made thinner than the protective films of the conventional magnetoresistive element, moisture resistance higher than that of the conventional magnetoresistive element can be obtained. The distance between 12 and the magnetic body to be detected is shortened, and a large detection output can be obtained.
更に、５ｉＯＸからなる第一保護膜１５を薄くし、その
外側に樹脂からなる第二保護膜１６を形成させることに
より熱衝撃により発生する熱応力を緩和し、基板１１や
第一保護膜１５のクラック発生を防止できる。Furthermore, by thinning the first protective film 15 made of 5iOX and forming a second protective film 16 made of resin on the outside thereof, thermal stress caused by thermal shock is alleviated, and the substrate 11 and the first protective film 15 are made thinner. Cracks can be prevented from occurring.
（実施例）
実施例１
膜厚がＯ，ｌｕｍのＮ１８７重量％、Ｆｅ１３重量％か
らなるＮｉ−Ｆｅ合金からなる強磁性薄膜が形成された
ガラスからなる基板を反応容器に入れ、Ｉ Ｘ ｌ ０
−５Ｔｏｒｒの圧力下で、３００°Ｃで６０分間加熱し
て加熱処理を行なった。(Example) Example 1 A substrate made of glass on which a ferromagnetic thin film made of a Ni-Fe alloy consisting of 187% by weight of N and 13% by weight of Fe with a film thickness of O.lum was formed was placed in a reaction vessel, and I
Heat treatment was performed by heating at 300° C. for 60 minutes under a pressure of −5 Torr.
次に、反応容器中にＳ ｉ Ｈ４と０□の混合ガスとキ
ャリヤガスとしてＡｒを送り込み、２５０℃、圧力１
ｘ １００−３ａｔで１時間反応を行なわせ、強磁性薄
膜層上に膜厚１μｍのＳｉＯからなる第一保護膜をＣＶ
Ｄ法で形成した。Next, a mixed gas of S i H4 and 0□ and Ar as a carrier gas were fed into the reaction vessel at 250°C and a pressure of 1.
Reaction was carried out at x 100-3at for 1 hour, and a first protective film made of SiO with a thickness of 1 μm was deposited on the ferromagnetic thin film layer by CVD.
It was formed by method D.
次に、第一保護膜が形成された基板を反応容器から取出
し、ポリエーテルアミド樹脂（日立化成工業■製、商品
名ＨＩＭＡＬ ＨＬ−１２１０）を厚さ２ＬＬｍに塗
布し、１８０°Ｃ１１時間で硬化させた。Next, the substrate on which the first protective film was formed was taken out from the reaction vessel, and polyetheramide resin (manufactured by Hitachi Chemical Co., Ltd., trade name: HIMAL HL-1210) was applied to a thickness of 2 LLm, and cured at 180°C for 11 hours. I let it happen.
上記方法により得られた磁気抵抗素子を３個用意し、８
０°Ｃ１相対湿度８０％で耐湿性試験をしたところ、強
磁性薄膜層が腐食されたものは０個であった。また、得
られた磁気抵抗素子を磁気エンコーダとして使用したと
ころ、検出出力は５６ｍＶであった。Three magnetoresistive elements obtained by the above method were prepared, and 8
When a moisture resistance test was conducted at 0° C. and 80% relative humidity, there were no samples in which the ferromagnetic thin film layer was corroded. Furthermore, when the obtained magnetoresistive element was used as a magnetic encoder, the detection output was 56 mV.
更に、得られた磁気抵抗素子３個を用意し、１５０°Ｃ
の恒温槽から室温に引き出して熱衝撃を加えたところ、
クラックが生じたものは０個であった。Furthermore, three of the obtained magnetoresistive elements were prepared and heated at 150°C.
When we pulled it out of a constant temperature bath to room temperature and applied a thermal shock,
There were no cracks.
また、得られた磁気抵抗素子３を２０００時間放置し、
基板上に吸着されていた水分や樹脂中の水分による強磁
性薄膜層の腐食の有無を試験したところ、強磁性薄膜層
が腐食されたものは０個であった。Further, the obtained magnetoresistive element 3 was left for 2000 hours,
When testing whether the ferromagnetic thin film layer was corroded by the moisture adsorbed on the substrate or the moisture in the resin, no ferromagnetic thin film layer was found to be corroded.
実施例２
第一保護膜をＣＶＤ法の代わりに、ケイ素酸化物（Ｓｉ
ｎ）をターゲットとして、圧力１×１０−３Ｔｏｒｒ、
電圧２５ ’００ ｖ、電流１５０ｍＡ、時間１時間で
スバ・ンクリングをして０５ＬＬｍのＳｉＯからなる第
一保護膜を形成したことを除いては、実施例１と同様に
して磁気抵抗素子を製造した。Example 2 The first protective film was formed using silicon oxide (Si
n) as a target, the pressure is 1 x 10-3 Torr,
A magnetoresistive element was manufactured in the same manner as in Example 1, except that the first protective film made of SiO of 0.5 LLm was formed by submerging at a voltage of 25'00 V, a current of 150 mA, and a time of 1 hour. .
得られた磁気抵抗素子を実施例１と同様にして試験した
ところ、耐湿性試験で強磁性薄膜層が腐食されたものは
３細巾Ｏ個であった。熱衝撃を加えて、クラックが生じ
たものは、３個中０個であった。検出出力は６３ｍＶで
あった。When the obtained magnetoresistive elements were tested in the same manner as in Example 1, the ferromagnetic thin film layer was corroded in 3 O pieces in the moisture resistance test. 0 out of 3 pieces developed cracks due to thermal shock. The detection output was 63 mV.
また、得られた磁気抵抗素子の、基板上に吸着されてい
た水分や樹脂中の水分による強磁性薄膜層の腐食の有無
を実施例１と同様にして試験したところ、強磁性薄膜層
が腐食されたものは３細巾Ｏ個であった。In addition, when testing the obtained magnetoresistive element for the presence or absence of corrosion of the ferromagnetic thin film layer due to moisture adsorbed on the substrate or moisture in the resin in the same manner as in Example 1, it was found that the ferromagnetic thin film layer was corroded. There were O pieces of 3 strips.
（比較例１）
実施例１で使用した基板上に、５１０４と０２の混合ガ
スとＡｒのキャリヤガスを反応容器に送り込み、温度２
５０″Ｃ１圧力Ｉ Ｘ １０−”ａｔｍで１時間反応さ
せて強磁性薄膜層上に膜厚１μｍのＳｉＯからなる保護
膜をＣＶＤ法で形成した。(Comparative Example 1) On the substrate used in Example 1, a mixed gas of 5104 and 02 and a carrier gas of Ar were sent into a reaction vessel, and the temperature was 2.
A reaction was carried out for 1 hour at a pressure of 50"C1 and a pressure of I.times.10-"atm, and a protective film of SiO having a thickness of 1 μm was formed on the ferromagnetic thin film layer by CVD.
得られた磁気抵抗素子を実施例１と同様にして耐湿性試
験をしたところ、強磁性薄膜層が腐食されたものは３個
中３個であった。熱衝撃を加えてクラックが生したもの
は、３個中２個であった。When the obtained magnetoresistive elements were subjected to a moisture resistance test in the same manner as in Example 1, the ferromagnetic thin film layer was corroded in three out of three. Two out of three pieces developed cracks due to thermal shock.
検出出力は５３ｍＶであった。The detection output was 53 mV.
（比較例２）
加熱処理を行なわずに、実施例１で使用した基板上に、
ポリエーテルアミド樹脂（日立化成工業■製、商品名Ｈ
ＩＭＡＬ ＨＬ−１２１０）を塗布し、硬化させて２
ＬＬｍの保護膜を形成した。(Comparative Example 2) On the substrate used in Example 1 without heat treatment,
Polyetheramide resin (manufactured by Hitachi Chemical Co., Ltd., product name H
Apply IMAL HL-1210) and cure it.
A protective film of LLm was formed.
得られた磁気抵抗素子を実施例１と同様にして耐湿性試
験をしたところ、強磁性薄膜層が腐食されたのは１個で
あった。また、得られた磁気抵抗素子を磁気エンコーダ
として使用したところ、検出出力は５９ｍＶであった。When the obtained magnetoresistive elements were subjected to a moisture resistance test in the same manner as in Example 1, the ferromagnetic thin film layer of one element was found to be corroded. Furthermore, when the obtained magnetoresistive element was used as a magnetic encoder, the detection output was 59 mV.
（比較例３）
実施例１で使用した基板上に、ケイ素酸化物（Ｓ ｉ
Ｏ）をターゲットとして圧力１×１０Ｔｏｒｒ、電圧２
５００Ｖ、時間２時間でスパッタリングをして１５ｕｍ
のＳｉＯからなる保護膜を形成した。(Comparative Example 3) Silicon oxide (Si
O) as a target, pressure 1 x 10 Torr, voltage 2
15um by sputtering at 500V for 2 hours
A protective film made of SiO was formed.
得られた磁気抵抗素子を実施例１と同様にして試験した
ところ、耐湿性試験で強磁性薄膜層が腐食されたものは
３個中２個であった。熱衝撃によリフラックが生じたも
のは３個中３個であった。When the obtained magnetoresistive elements were tested in the same manner as in Example 1, the ferromagnetic thin film layer was corroded in two out of three in the moisture resistance test. Three out of three samples suffered reflux due to thermal shock.
検出出力は２０ｍＶであった。The detection output was 20 mV.
（比較例４）
加熱処理を施さない実施例１の基板上にポリエーテルア
ミド樹脂（日立化成工業■製、ＨＩＭＡＬ ＨＬ−１
２１０）を塗布し、硬化させて５μｍの保護膜を形成し
た。(Comparative Example 4) A polyetheramide resin (manufactured by Hitachi Chemical Co., Ltd., HIMAL HL-1) was placed on the substrate of Example 1 which was not subjected to heat treatment.
210) was applied and cured to form a 5 μm protective film.
また得られた磁気抵抗素子の、基板上に吸着されていた
水分や樹脂中の水分による強磁性薄膜層の腐食の有無を
実施例１と同様にして試験したところ、強磁性薄膜層が
腐食されたものは３個中３個であった。In addition, when the obtained magnetoresistive element was tested for corrosion of the ferromagnetic thin film layer due to moisture adsorbed on the substrate or moisture in the resin, the ferromagnetic thin film layer was tested in the same manner as in Example 1. There were 3 out of 3 items.
（発明の効果）
以上の説明で明らかなように、本発明の磁気抵抗素子は
耐湿性に優れ、また保護膜の膜厚を薄くすることができ
るので強磁性薄膜層と発６Ｒ体との距離が短（なり、し
たがって検出出力が増大する。更にケイ素酸化物からな
る第一保護膜を薄（し、その」二に樹脂からなる第二保
護膜を形成したので、熱衝撃によって生じる熱応力を緩
和することがてきる。したがって基板や第一・保護膜に
クラックが発生しにくくなった。(Effects of the Invention) As is clear from the above explanation, the magnetoresistive element of the present invention has excellent moisture resistance, and since the thickness of the protective film can be made thin, the distance between the ferromagnetic thin film layer and the 6R emitter is In addition, the first protective film made of silicon oxide is made thinner, and the second protective film made of resin is formed on top of it, which reduces thermal stress caused by thermal shock. Therefore, cracks are less likely to occur in the substrate and the first protective film.
第１図は、従来の磁気抵抗素子の断面図、第２図は本発
明の磁気抵抗素子の断面図である。FIG. 1 is a sectional view of a conventional magnetoresistive element, and FIG. 2 is a sectional view of a magnetoresistive element of the present invention.
Claims (5)
強磁性薄膜上に形成されたケイ素酸化物（ＳｉＯ＿ｘ、
ただし０．５≦ｘ≦２）からなる第一保護膜と、該第一
保護膜上に形成された合成樹脂からなる第二保護膜とか
らなることを特徴とする磁気抵抗素子。(1) A substrate, a ferromagnetic thin film formed on the substrate, and a silicon oxide (SiO_x,
A magnetoresistive element comprising a first protective film made of a synthetic resin (0.5≦x≦2) and a second protective film made of a synthetic resin formed on the first protective film.
リエーテルアミド樹脂またはポリアミド樹脂である請求
項１記載の磁気抵抗素子。(2) The magnetoresistive element according to claim 1, wherein the synthetic resin is a polyimide resin, an epoxy resin, a polyetheramide resin, or a polyamide resin.
請求項１記載の磁気抵抗素子。(3) The magnetoresistive element according to claim 1, wherein the first protective film has a thickness of 0.1 to 10 μm.
項１記載の磁気抵抗素子。(4) The magnetoresistive element according to claim 1, wherein the second protective film has a thickness of 1 to 10 μm.
３５０℃で加熱する第一工程と、該基板の該強磁性薄膜
の上にケイ素酸化物（ＳｉＯ＿ｘ、ただし０．５≦ｘ≦
２）の第一保護膜を形成する第二工程と、該第一保護膜
上に合成樹脂からなる第二保護膜を形成する第三工程と
からなることを特徴とする磁気抵抗素子の製造方法。(5) The substrate on which the ferromagnetic thin film is formed is heated to
A first step of heating at 350°C and silicon oxide (SiO_x, where 0.5≦x≦
2) A method for manufacturing a magnetoresistive element, comprising a second step of forming a first protective film, and a third step of forming a second protective film made of synthetic resin on the first protective film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2139979A JPH0435076A (en) | 1990-05-31 | 1990-05-31 | Magnetoresistance element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2139979A JPH0435076A (en) | 1990-05-31 | 1990-05-31 | Magnetoresistance element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0435076A true JPH0435076A (en) | 1992-02-05 |
Family
ID=15258122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2139979A Pending JPH0435076A (en) | 1990-05-31 | 1990-05-31 | Magnetoresistance element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0435076A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0616317A2 (en) * | 1993-03-16 | 1994-09-21 | Sharp Kabushiki Kaisha | Thin film magnetic head and method of manufacturing the same |
| WO2004025745A1 (en) * | 2002-09-13 | 2004-03-25 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect element and production method and application method therefor |
| JP4846955B2 (en) * | 2000-04-06 | 2011-12-28 | 旭化成エレクトロニクス株式会社 | Magnetoelectric transducer |
-
1990
- 1990-05-31 JP JP2139979A patent/JPH0435076A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0616317A2 (en) * | 1993-03-16 | 1994-09-21 | Sharp Kabushiki Kaisha | Thin film magnetic head and method of manufacturing the same |
| EP0616317A3 (en) * | 1993-03-16 | 1995-06-14 | Sharp Kk | Thin film magnetic head and method of manufacturing the same. |
| JP4846955B2 (en) * | 2000-04-06 | 2011-12-28 | 旭化成エレクトロニクス株式会社 | Magnetoelectric transducer |
| WO2004025745A1 (en) * | 2002-09-13 | 2004-03-25 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect element and production method and application method therefor |
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