JPH04350162A - Planar magnetron sputtering electrode and method for controlling plasma - Google Patents

Abstract

PURPOSE:To increase the film forming rate by rotating a first magnet eccentrically to a second magnet contg. the first magnet. CONSTITUTION:A magnet provided on the back of a target 3 consisting of a film forming material is formed with a first magnet 1 and a second magnet 2 in a planar magnetron sputtering electrode 21, and the first magnet 1 is placed within the second magnet 2. The first magnet 1 is rotated eccentrically to the second magnet 2. A plasma control magnet is formed with the first magnet 1 and the second magnet 2. The position of plasma produced on the target 3 surface is controlled by rotating the first magnet 1 eccentrically to the second magnet 2. The target material is effectively utilized in this way.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering electrode for a sputtering apparatus, and more particularly to a method for enlarging the erosion area on a target surface and increasing the film formation rate.

0002

[Prior Art] A sputter electrode is disclosed in Japanese Patent Application Laid-Open No. 1983-1981, in which a magnet is rotated on the back side of a target to form a sputter film while moving plasma on the target.
It is described in Publication No. 7586.

0003

SUMMARY OF THE INVENTION The sputtering electrode disclosed in the above invention is one in which a magnet assembly consisting of a set of magnets is integrally rotated relative to a target. However, according to this method, as a result of rotation, the tar
Although the erosion area of the target is widened, the erosion area of the target at each moment (the area from which the film-forming particles fly out) is narrow, resulting in a low film-forming rate.

0004

[Means for solving the problem] The above purpose is to solve the problem by
A first magnet and a second magnet are placed on the back side of the target, the second magnet contains the first magnet, and the second magnet is arranged in a circle along the outer periphery of the target. This is achieved by rotating the magnet eccentrically with respect to the second magnet.

[0005]

[Operation] A first magnet and a second magnet are placed on the back side of a circular flat plate target, the second magnet contains the first magnet, and the second magnet is placed in a circular shape along the outer periphery of the target. and rotate the first magnet eccentrically with respect to the second magnet,
At a given instant in the magnet configuration (as shown in Figure 3), the magnetic field formed by the first and second magnets will be as shown by the magnetic field lines in Figure 3, and will be similar to the conventional sputter electrode (as shown in Figure 4). Compared to this, erosions 14 and 15 can be formed over a wider area of the target. As a result, sputtered particles are emitted from a wide area of the target, making it possible to form a film two to five times faster than with conventional sputtering electrodes for the same power density. Furthermore, by eccentrically rotating the first magnet, the erosion region spreads over almost the entire surface of the target, increasing the efficiency of target utilization.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of a sputter electrode according to the present invention. In FIG. 1, a first magnet 1 and a second magnet 2 are arranged on the back surface of a target 3, which is a film forming material. The target 3 is placed on a backing plate 4. The backing plate 4 is cooled by water flowing into the water channel 5, and prevents the target from overheating during sputtering. The first magnet 1 has a cylindrical shape, and the second magnet 2 has an annular shape and is attached to disks 6 and 7 made of magnetic material (for example, iron), respectively. The first magnet 1 and the second magnet 2 are magnetized in opposite directions. (In Figure 1, N and S are the N pole and S pole, respectively.
Shows poles. ) The second magnet contains the first magnet, and the first magnet is configured to be eccentrically rotated with respect to the second magnet 2 by a motor 9 via a rotating shaft 8. During film formation, the target 3 is applied with a negative high voltage (
Usually 200 to 1000 V) is applied. In FIG. 1, a power source for applying high voltage is omitted. Since a high voltage is applied to the casing 12, the motor 9 has electric insulators 13,1
It is fixed to the casing 12 via 3'. FIG. 2 shows a cross section taken along line AA in FIG. The second magnet 2 is a circular flat plate.
They are arranged in a circle along the outer periphery of the get 3. Figure 1
FIG. 5 shows the erosion of the target when the magnets are arranged as shown in FIG. There are two erosion parts, 14 and 15, 1
The parts indicated by 6 and 17 are not subjected to sputtering, but rather the sputtered particles are attached again. When the first magnet is rotated half a turn, the erosion pattern shown in FIG. 5 is reversed. That is, the first magnet is moved at an appropriate speed (preferably a speed that is several tenths of the time required for film formation).
When the target is rotated, almost the entire surface of the target is sputtered, forming an erosion region 18, as shown in FIG. As a result, the target material is used efficiently and economically. Furthermore, the fact that almost the entire surface of the target becomes the erosion area has the following advantages.

[0007] Sputtered film particles re-deposit in areas other than the erosion area, and at this time, a poor quality film is formed that occludes impurities, resulting in abnormal discharge on the target surface. Ta. Abnormal sputtering occurs locally on the target where the abnormal discharge occurs, and foreign matter is generated. In submicron LSIs, foreign matter is the biggest cause of yield reduction, and a sputter electrode that can form erosion on almost the entire surface is effective in suppressing abnormal discharge and reducing foreign matter.

[0008]

[Effects of the Invention] According to the present invention, since the erosion area of the target can be enlarged, the film formation rate can be improved.Furthermore, since sputtering can be performed from almost the entire surface of the target, the target material can be It can be used effectively.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a sputter electrode showing an embodiment of the present invention;

FIG. 2 is an AA cross-sectional view of the sputter electrode of the present invention shown in FIG.

FIG. 3 is an explanatory diagram showing erosion caused by the sputter electrode of the present invention;

FIG. 4 is an explanatory diagram showing erosion of a conventional sputter electrode,

[Figure 5] A cross-sectional view of the target erosion.

[Figure 6
] Another cross-sectional view of the target erosion.

[Explanation of symbols]

1...First magnet, 2...Second magnet, 3...Target, 4
...Backing plate 8...Rotating shaft, 9...Motor, 10...Belt, 11, 11'
...Gear, 12...Casing, 13, 13'...Insulator, 1
9... Anode, 20, 20'... Insulator, 21... Sputter electrode, 22... Coated substrate.

Claims (2)

[Claims] 1. In a planar magnetron sputtering electrode, a magnet disposed on the back surface of a target made of a film-forming material is composed of a first magnet and a second magnet, and the second magnet is the second magnet. 1. A planar magnetron sputtering electrode, characterized in that the first magnet includes a magnet, and the first magnet rotates eccentrically with respect to the second magnet. 2. A method for controlling the position of a plasma control magnet of a planar magnetron sputtering electrode, wherein the plasma control magnet includes a first magnet and a second magnet, and the second magnet is located opposite the first magnet. 1. A plasma control method comprising: controlling a position of plasma generated on a target surface by rotating the first magnet eccentrically with respect to the second magnet.