JPH02101158A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH02101158A JPH02101158A JP25076388A JP25076388A JPH02101158A JP H02101158 A JPH02101158 A JP H02101158A JP 25076388 A JP25076388 A JP 25076388A JP 25076388 A JP25076388 A JP 25076388A JP H02101158 A JPH02101158 A JP H02101158A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- filament
- anode
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 40
- 230000005291 magnetic effect Effects 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気記録材料等に用いられる薄膜形成用の正極
スパッタリンクンースを有するスパッタリング装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus having a positive electrode sputtering source for forming thin films used for magnetic recording materials and the like.
スパッタリングによる薄膜形成には、種々の方式があり
また多様の装置が用いられているが、生産性及び膜質の
向上を図る１、：めに現在マグネト［］ン型のスパッタ
リング装「・′スが主流どなって来でいる。There are various methods and devices used to form thin films by sputtering, but in order to improve productivity and film quality, there is currently a magneto-type sputtering system. It's becoming mainstream.
しかしながら、マグネ１〜【］ン３１１のスパッタリン
グ装置ではターゲットの損傷が局部的に発生ずるためタ
ーグツ１〜の利用効率が低い。又強磁性体ターグツ１〜
を用いる場合には該ターグツ１〜により磁界が影響を受
け、所望り−る磁界状態を良好に保つことが困難になる
ためターグツ１〜の厚みを薄くするか、もしくは磁場強
度を高くしなりればならないなどの欠員を有している。However, in the sputtering apparatus of the magnets 1 to 311, damage to the target occurs locally, so the utilization efficiency of the targets 1 to 311 is low. Also, ferromagnetic material 1~
When using a magnetic field, the magnetic field is affected by the magnetic field 1~, making it difficult to maintain the desired magnetic field condition. There are vacancies such as:
このような欠点を改狽できるものとしで三極スパッタリ
ングソースを用いＩこスパッタリング装置が注目され各
７ｊ面の応用が検１寸されている。A sputtering apparatus using a three-electrode sputtering source has attracted attention as a device capable of overcoming these drawbacks, and applications for each 7j plane have been investigated.
この＝ｉスパッタリングソースを具備したスパッタリン
グ装置は、例えば特開昭６１−２６１１１７６号舌に開
示され（いるように、ターゲット電極と、クーグツ１〜
の一側に配されＩＣＣフィンン１〜と、このフィラメン
１〜に対向したアノードとの三極を有し、かつ、前記ア
ノードと前記フイラメン１へ間の電界に直交する磁界を
生じる磁石を備え、さらに、二極スパッタリングソース
内にプラズマを閉じ込める適宜構造を右している。、Ｉ
、７ｊがつ（、スパッタ収量（率）を向］二さＵること
ができる。。A sputtering apparatus equipped with this =i sputtering source is disclosed, for example, in Japanese Patent Application Laid-Open No. 61-2611176 (as shown in Fig. 1).
It has three poles of an ICC fin 1~ arranged on one side and an anode facing the filament 1~, and includes a magnet that generates a magnetic field perpendicular to the electric field between the anode and the filament 1, Additionally, suitable structures are used to confine the plasma within the bipolar sputtering source. , I
, 7j can increase the sputter yield (rate).
（発明が解決しようどする課題）
しかしながら三極スパッタリングソースを用いたスパッ
タリング装置においＣム、フｒノメンｈに近い位置のタ
ーゲットの損１！２ （消耗）が大きく、この損傷の不
均一は他のマグネト（］ン型のスパッタリング装置にお
ける程ではないが、磁気記録月利の磁性体の成躾萌の再
現性にとつＣ問題となる。。(Problem to be solved by the invention) However, in a sputtering apparatus using a three-electrode sputtering source, the loss1!2 (wear) of the target located near the C and R is large, and this non-uniform damage is caused by other Although this is not as serious as in the case of a magneton-type sputtering apparatus, it is a problem C regarding the reproducibility of the formation of magnetic materials in magnetic recording.
近年、光磁気記録媒体や磁気記録月利の分野においで、
合金ターゲラｈ化が困難イヌ月１ｍｌでの要求から、ク
ーグツ１−どしての母料の中にチップ状の別月料を分散
配置した複合ターグツ１へがしばしば用いられるが」一
連した１０傷の不均一は、特にこの様なり−グツ１−を
用いたとぎに膜１！Ｉ竹のばらつきを生ずる原因となっ
ていた。In recent years, in the field of magneto-optical recording media and magnetic recording monthly interest rates,
Due to the difficulty in forming the alloy Targera H, due to the requirement of 1 ml, composite Targera 1 is often used, in which chip-shaped separate material is dispersed in the matrix of Kugutu 1, but a series of 10 scratches is used. The non-uniformity of the membrane 1 is especially noticeable when using the ``gutsu 1''. This was the cause of variations in the quality of bamboo.
本発明の目的は二極スパッタリングソースを備えた装置
において、従来以上にクーグツｉ−の部分消耗を防ぎ、
クーグツ１〜材利のＥｂ利用効率化を図ると共に成膜１
時の再現性を高めることのできるスパッタリング装置を
提供することにある、。The purpose of the present invention is to prevent partial wear of Kugutsu i- more than before in an apparatus equipped with a bipolar sputtering source.
Kugutsu 1 - Improving the efficiency of Eb utilization and film formation 1
The purpose of the present invention is to provide a sputtering device that can improve time reproducibility.
本発明の上記［１的は、薄膜が形成される基板に対向づ
−るように配置１胃されたターゲットと該ターグツ１へ
の一側に配されに）ｒシメントと該フイラメン１〜に対
向Ｊる側に説りられたアノードと、該アノードと前記フ
ィシメント間に発生する電界と直交りる磁界を発生づる
磁イ１とから成る×極スパッタリングソース４［１協し
たスパッタリング装「１においで、前式己ターグツ１〜
をクーグツ１−表面に沿って回ｉ１＋スさせるように構
成したことを特徴とするスパッタリング装（５によつＣ
′）１．成される。The above-mentioned target of the present invention is arranged so as to face the substrate on which the thin film is formed. A x-pole sputtering source 4 [1] consisting of an anode placed on the opposite side of the pipe and a magnet 1 generating a magnetic field orthogonal to the electric field generated between the anode and the fisciment. , Maeshiki Targutsu 1~
A sputtering device (5) characterized in that the sputtering device (5) is configured so that the
')1. will be accomplished.
以下、本発明の一実施態様を第１図及び第２図を用いて
説明する５゜
第１図は本発明の模式的構成図の側面図であり、第２図
は平面図である。Hereinafter, one embodiment of the present invention will be explained using FIGS. 1 and 2. FIG. 1 is a side view of a schematic configuration diagram of the present invention, and FIG. 2 is a plan view.
第１図に示ずように、真空チャンバー１内に、薄膜が形
成される基板３ど三極スパックリングソース４が、上下
に所定間隔をありで配されている。前記基板３は前記真
空ブ＼・ンバー１の１一方に設けられた基板ホルダー２
に支えられアースされている。前記三極スパッタリング
ソース１はそのほぼ中央に円盤状のターグツ１へりを右
し、前記ターグツ１〜５の一側にはタングステンあるい
はタンタル等からなりヂ１７ンバー外のフィシメン１〜
電源１１に接続されたフィラメン１−〇が設りられ、前
記フィラメン１〜６に対向りる側にはアノードバイアス
電ｍ１２によつで正電位にバイアスされで熱電子を誘導
するアノード７が設（）られ、アノード近傍にはガスボ
ンベ１０からのガス導入部９が設（）られており、更に
これら各部月は前記ターグツ１〜５の間口一部を残して
アルミニウムなどの導電体から成るカバー８で覆われた
構造となっている。As shown in FIG. 1, in a vacuum chamber 1, a substrate 3 on which a thin film is to be formed, and a triode sputtering source 4 are disposed vertically at a predetermined interval. The substrate 3 is mounted on a substrate holder 2 provided on one side of the vacuum chamber 1.
It is supported and grounded. The three-electrode sputtering source 1 has a disc-shaped target 1 at its center, and on one side of the target 1 to 5 there are 17 fibers made of tungsten or tantalum.
A filament 1-0 connected to a power source 11 is provided, and an anode 7 biased to a positive potential by an anode bias voltage m12 and inducing thermoelectrons is provided on the side opposite the filaments 1-6. A gas introduction part 9 from a gas cylinder 10 is provided near the anode, and each of these parts is covered with a cover 8 made of a conductive material such as aluminum, leaving a part of the frontage of the tags 1 to 5. The structure is covered with
また、前記アノード７と前記フィラメンｌ−６１７ｔ１
に発生する電界どはぼ直交Ｊる磁界を発生するように前
記ターゲット５の両側には第２図に示すように永久磁石
１６ａ 、 １６ｂ ｈ＜設（）られ−Ｃいる。この構
成によりプラズマの前記′：、極スパッタリングソース
４内への閉じ込めがより完全４ｒものとなり、極めでイ
■れた低温高速スパッタリングができる。Further, the anode 7 and the filament l-617t1
As shown in FIG. 2, permanent magnets 16a, 16b are installed on both sides of the target 5 to generate a magnetic field that is perpendicular to the electric field generated. With this configuration, the confinement of the plasma within the extremely high sputtering source 4 becomes more complete, and extremely low-temperature, high-speed sputtering can be performed.
−ト述の範囲においては従宋駁ｆｌｖｌど同様であるが
、本発明のＱ’：ｒ ｍは、このＪ： ）＜Ｉ−前記三
極スパックリングソース１において、前記ターグツ１〜
５を前記真空ヂトンバー１の外部に段りた駆動手段によ
り、回転Ｊるようにした構造にある。この回転構造は、
例えば前記クーグツ１−５の中心を支える軸１６が、適
当な回転比のギア１４ａ 、 １４ｂを介して間接的に
七−タ１５によって前記ターゲット５を水平に回転させ
る構造ど４丁つている。前記ターゲット５の回転数は４
？ｉに限定づるものではなく、電界及び磁界の強度や前
記ターグツｉ〜５の素材などの諸条件ににつて決定して
もよい。- In the above-mentioned range, it is the same as that of the Congo Song Dynasty, but the Q':rm of the present invention is this J:
5 is rotated by a driving means arranged outside the vacuum cutting bar 1. This rotating structure is
For example, the shaft 16 that supports the center of the target 1-5 has four structures that indirectly rotate the target 5 horizontally by a seventh gear 15 through gears 14a and 14b having an appropriate rotation ratio. The rotation speed of the target 5 is 4
? It is not limited to i, and may be determined based on various conditions such as the strength of the electric field and magnetic field and the material of the tags i to 5.
又、前記ギア１４ａ 、 １４ｂの代りに変速ギア等を
設りた構成とりることｂでさる。。Further, it is possible to adopt a configuration in which a speed change gear or the like is provided in place of the gears 14a and 14b. .
なお、前記ターグツｌ−５は、前記軸１６を介し一〇タ
ーゲッ１〜電源に繋げられているのＣ１前記を夕１５ど
前記ターグツ１〜電源とを絶縁りるために、前記ギア１
４ａ 、 １４ｂの少なくとも一方がしラミック等の絶
縁部材により構成されている。In addition, the target gear 1-5 is connected to the gear 1 in order to insulate the target 1 to the power source C1, which is connected to the target 1 to the power source via the shaft 16.
At least one of 4a and 14b is made of an insulating member such as lamic.
本態様のように構成されノζ装置によるスパッタリング
は、前記ガスボンベ１０から前記ガス導入部９を介して
前記三極スパッタリングソース１内（ご導入されたアル
ゴン等のガスが熱？ｈ了にＪ、゛、）Ｃプラズマ化され
、これが前記ターゲット５に印加される負の直流電圧、
若しくは負にバイアスされた高周波電力ににり前記ター
グツ１へ５をボンバードづる過程で行われる。この方法
ではプラズマが前記三極スパッタリングソース４内に殆
ど閉じ込められるので、高いスパッタ収ｆ６が効率良＜
１！１られる。ざらに、前記モータ１５によって前記タ
ーグツ１〜５を回転さＵることににす、前記ターゲット
５の各部分の前記フイラメンｉ−６に対Ｊる位置関係が
同じ条ｆ１どなり前記ターゲット５の不均一イに消耗を
回避づることができる、したがつ“Ｃ１前記クーグツ１
へ５の利用効率は従来に比へて極めて高くなり、又、前
記ターグツ１〜５の利用がイの仝而にて平均的に４ｆる
ことにより、特に複含月におい（、メ−； ＋Ａ ｉ、
ニス・１りる成膜の１１１現ｆ＋を向ＩＪることがて゛
さ る ３゜
〔発明の効果〕
上記の如く本発明のスパッタリング装″１１は、三極ス
パッタリングソースにおいて、クーゲットを回転さυる
機構を配設したのＣ、ターグツ１〜表面にＣ３４Ｊるス
パック条件が均一化でき、ターゲットの部分消耗が常に
ターグツ１〜の全面において均等に行われ、クーゲット
の部分層Ｊ［が防がれ、ターゲッｌ〜々Ａ斜のｌ「口利
用効率化が実現されてターグツ１ヘズ♂命が長くイより
、−］ススミ−ダウに貢献するＱとができ、さらに、タ
ーグツ１〜表面全域を均等にスパッタできることにより
成膜の再現性を高め、膜質の向−にを図ることがで゛ぎ
た。Sputtering with the apparatus configured as in this embodiment is performed when a gas such as argon is introduced into the triode sputtering source 1 from the gas cylinder 10 through the gas introduction section 9,゛,) A negative DC voltage that is turned into C plasma and applied to the target 5;
Alternatively, it may be carried out in the process of bombarding the target 1 with 5 using negatively biased high frequency power. In this method, since the plasma is mostly confined within the triode sputtering source 4, a high sputtering convergence f6 can be achieved with good efficiency.
1! I get 1. Roughly speaking, when the targets 1 to 5 are rotated by the motor 15, the positional relationship of each part of the target 5 with respect to the filament i-6 is the same as the line f1, so that the target 5 is rotated. It is possible to uniformly avoid wear and tear.
The usage efficiency of 5 has become extremely high compared to the past, and since the usage of the above-mentioned tags 1 to 5 is 4f on average in i,
3. [Effects of the Invention] As described above, the sputtering device 11 of the present invention rotates the Couget in the triode sputtering source. C34J is equipped with a mechanism to uniformize the spacking conditions on the surface of the target 1~, and the partial wear of the target is always performed evenly over the entire surface of the target 1~, preventing the partial layer J[ of the target 1~. , target l~~A diagonal l ``Efficiency in the use of the mouth has been realized, and the life of the target is longer than that of the target. By being able to perform sputtering quickly, it was possible to improve the reproducibility of film formation and improve the film quality.
第１図は本発明のスパッタリング装置の一実施例の模式
的構成図の側面図、第２図は第１図に示Ｊススバッタリ
ング装置におりる三極スパッタリングソースの概略型「
１１図Ｃある。
１・・・真空Ｊトンバー ２・・・基板ホルダ、３・
・・１；Ｌ 板、
４・・・三極スパッタリングソース、
５・・・ターグツ１〜、 ６川−ノイレメン１〜．
７・・・アノード、 ８・・・カバ９・・・ガ
ス導入部、 １０・・ガスボンへ、１１・・・フィ
ラメン１〜電源、
１２・・・アノードバイアス電汎）、
１３・・・ターグツ１〜電源、 １４ン＋ 、 １４ｂ
・・・１ｒア、１５・・・モータ、 １６ａ
、 ＩＧｂ・・・永久磁石５゜代 理 人 弁理士
（８１０７）仏−々木 Ｗ】 隆（他３名）
９〕FIG. 1 is a side view of a schematic configuration diagram of an embodiment of the sputtering apparatus of the present invention, and FIG.
There is 11 Figure C. 1... Vacuum J-ton bar 2... Substrate holder, 3...
...1; L plate, 4...triode sputtering source, 5...Tagutsu 1~, 6 River-Neuremen 1~.
7...Anode, 8...Cover 9...Gas introduction part, 10...To gas cylinder, 11...Filament 1 to power supply, 12...Anode bias electrical circuit), 13...Tagtsu 1 ~Power supply, 14n+, 14b
...1ra, 15...motor, 16a
, IGb...Permanent magnet 5° representative Patent attorney (8107) Butsugi W] Takashi (3 others) 9]
Claims (1)
ゲットと、該ターゲットの一側に配されたフィラメント
と該フィラメントに対向する側に設けられたアノードと
、該アノードと前記フィラメント間に発生する電界と直
交する磁界を発生する磁石とから成る三極スパッタリン
グソースを具備したスパッタリング装置において、前記
ターゲットをターゲット表面に沿って回転させるように
構成したことを特徴とするスパッタリング装置。A target disposed to face a substrate on which a thin film is formed, a filament disposed on one side of the target, an anode disposed on the side opposite the filament, and a target disposed between the anode and the filament. 1. A sputtering apparatus equipped with a three-pole sputtering source comprising an electric field and a magnet that generates a magnetic field perpendicular to the electric field, the sputtering apparatus being characterized in that the target is configured to rotate along the target surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25076388A JPH02101158A (en) | 1988-10-06 | 1988-10-06 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25076388A JPH02101158A (en) | 1988-10-06 | 1988-10-06 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02101158A true JPH02101158A (en) | 1990-04-12 |
Family
ID=17212678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25076388A Pending JPH02101158A (en) | 1988-10-06 | 1988-10-06 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02101158A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013241652A (en) * | 2012-05-21 | 2013-12-05 | Sumitomo Heavy Ind Ltd | Film deposition apparatus |
| US9771647B1 (en) * | 2008-12-08 | 2017-09-26 | Michael A. Scobey | Cathode assemblies and sputtering systems |
| US11479847B2 (en) | 2020-10-14 | 2022-10-25 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
-
1988
- 1988-10-06 JP JP25076388A patent/JPH02101158A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9771647B1 (en) * | 2008-12-08 | 2017-09-26 | Michael A. Scobey | Cathode assemblies and sputtering systems |
| US10801102B1 (en) | 2008-12-08 | 2020-10-13 | Alluxa, Inc. | Cathode assemblies and sputtering systems |
| JP2013241652A (en) * | 2012-05-21 | 2013-12-05 | Sumitomo Heavy Ind Ltd | Film deposition apparatus |
| US11479847B2 (en) | 2020-10-14 | 2022-10-25 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
| US11932932B2 (en) | 2020-10-14 | 2024-03-19 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
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