JPH04345026A - Plasma treating device - Google Patents

Abstract

PURPOSE:To increase the density of microwave excitation plasma and to improve a treating speed and a treating efficiency in a plasma treating device using the microwave excitation plasma. CONSTITUTION:Hg vapor encapsulating tubes 29a and 29b are provided on a quartz panel 23 constituting an upper cover of a treating chamber of a microwave plasma ashing device in a concentric circle form. A component, which is transmitted the panel 23 only, of a microwave mu which enters from the upper direction in the diagram excites directly plasma and a component, which enters the tubes 29a and 29b, of the microwave mu excites Hg vapor and generates ultraviolet rays hnu. These ultraviolet rays hnu contribute to a further excitation of the plasma and an activation of adsorbed chemical species on a wafer surface. It is possible to apply the same mechanism as the above also to an etching device. When the form and arrangement of the tubes 29a and 29b are newly contrived, the in-plane distribution of the incident power of the microwave can be also uniformized.

Description

[Detailed description of the invention]

0001

[Industrial Field of Application] The present invention relates to a plasma processing apparatus that performs various processing on substrates (wafers) to be processed in the manufacturing process of semiconductor devices, etc., and in particular aims at speeding up, high reliability, and uniformity of processing. The present invention relates to a plasma processing apparatus capable of processing.

0002

2. Description of the Related Art As semiconductor devices become more highly integrated and have higher performance, as seen in VLSI, ULSI, etc. in recent years, their design rules are becoming finer to submicron or even quarter micron. Under such fine design rules, the thickness of the various material layers that make up semiconductor devices has become extremely thin, making it less damaging than before in various processes such as dry etching. is becoming increasingly important. On the other hand, as devices become more highly integrated, chip areas are increasing, wafers are becoming larger in diameter, and high-mix, low-volume production is required, as typified by ASICs. From this background, it is expected that single-wafer type plasma processing equipment will become mainstream in the future. In order to ensure productivity equivalent to conventional batch-type equipment in single-wafer type equipment, it is essential to dramatically improve processing speed while maintaining low damage properties.

Taking dry etching as an example, the factors that are deeply involved in the etching rate are radical density, ion density, and ion incident energy. Among these, it is desired to keep the ion incident energy low from the viewpoint of reducing damage, so in order to increase the etching rate, it is necessary to increase the radical density and ion density, that is, to generate high-density plasma. Various methods have been proposed to generate high-density plasma, but the methods considered to be particularly practical are the magnetron type and the ECR (electron cyclotron resonance) type, which have already been applied to mass-produced machines. has been done. The magnetron type applies a magnetic field perpendicular to the electric field in a low gas pressure region of 0.05 Torr or less, where the mean free path of gas molecules is sufficiently long, causing electrons to move cycloidally in the plasma and confining them near the wafer. This method increases the efficiency of molecular dissociation. Increasing the magnetic field strength increases the plasma density and lowers the sheath voltage. On the other hand, in the ECR type, when the cyclotron angular frequency ωc of electrons moving cycloidally in a magnetic field matches the angular frequency ω of the microwave electric field (ECR condition is met), the electrons absorb microwave energy resonantly. This method uses the acceleration of gas molecules to increase the dissociation efficiency of gas molecules. The ECR condition is established at the point where a magnetic flux density of 875 Gauss is achieved for the microwave of 2.45 GHz (ECR position), and 10-5 Tor
High-density plasma can be generated even under a gas pressure as low as r.

0004

[Problems to be Solved by the Invention] However, in order to further improve the etching rate and to perform more thorough plasma processing due to the miniaturization of devices, higher plasma density or plasma processing efficiency than before is required. There are also cases where this is the case. A typical case is the etching of an aluminum (Al) based material layer and the ashing of a resist mask after etching. Al-based material layers are one of the most widely used materials for forming wiring in semiconductor devices, but as is well known, they suffer from corrosion that occurs after etching (after-corrosion).
How to prevent this is an important issue. The Al-based material layer is generally etched using a chlorine-based gas, as typified by the BCl3/Cl2 mixed gas disclosed in Japanese Patent Publication No. 59-22374. As a result, reaction products such as AlCl3 and AlOx Cly, decomposition products of chlorine gas, and the like remain in various forms on the surface of the wafer after etching. When these residual chlorine absorbs moisture in the air and forms electrolyte droplets, Al is eluted into the droplets and after-corrosion occurs.

Measures to prevent after-corrosion include (a) plasma cleaning using a fluorine-based gas such as CF4 or CHF3 to replace residual chlorine with fluorine, and (b) cleaning the inside of the etching equipment. After etching is completed, the wafer is transferred to the attached plasma ashing device without being exposed to the atmosphere, and the resist mask containing a large amount of residual chlorine is immediately removed (c
) After the etching is completed and before the wafer is exposed to the atmosphere, a carbon-based polymer is deposited on the surface of the wafer by performing plasma treatment using a deposition gas to block the intrusion of moisture; (d) O2 plasma treatment It is known to form a passive film of aluminum oxide (AlOx) on the surface of an Al-based material layer by ultraviolet irradiation, wet oxidation, etc. to cut off contact with atmospheric moisture.

However, in recent years, copper (Cu) has been added to Al-based materials to improve electromigration resistance, or wiring patterns have a barrier metal or anti-reflection film structure rather than a single-layer structure of Al-based materials. Factors that actually promote after-corrosion are increasing, such as the fact that they are now constructed with a laminated structure. These causes the formation of copper chloride with a low vapor pressure, the intrusion of chlorine into the interface between dissimilar material layers, and the formation of local batteries due to the joining of dissimilar metals. Even with the above-mentioned measures, after-corrosion occurs. prevention is becoming increasingly difficult.

[0007] These problems can be solved by further increasing the plasma density, increasing the plasma processing efficiency, or both in the various plasma treatments that have been carried out as conventional after-corrosion prevention measures. It is thought that it will be done. In other words, it is possible to promote the reaction of residual chlorine during resist ashing to change it into a volatile compound, or to further promote the formation of a passive film on the surface of an Al-based material pattern and to make the film denser. It would be good if it were possible. Improvements in plasma density and plasma processing efficiency are not limited to the above-mentioned patterning of Al-based material layers, but also lead to more complete processing and improved processing speed in various other processes. SUMMARY OF THE INVENTION In view of the above circumstances, it is an object of the present invention to provide a plasma processing apparatus capable of generating higher density plasma than ever before and increasing plasma processing efficiency.

[0008]

[Means for Solving the Problems] The plasma processing apparatus of the present invention is proposed to achieve the above-mentioned object, and uses plasma excited by microwaves in a processing chamber to treat a substrate to be processed. The plasma processing apparatus is provided with a gas filling means that is interposed on the propagation path of the microwave in the vicinity of the processing chamber and forms a gas layer, and is excited by a part of the energy of the microwave. The method is characterized in that ultraviolet rays generated from the gas layer and the microwaves are irradiated into the processing chamber.

[0009]

[Operation] In conventional plasma processing apparatuses, high plasma density has been achieved by devising a discharge mechanism such as a magnetron type or an ECR type. However, in order to further increase the plasma density or further improve the plasma processing efficiency, there is a limit to what can only be done on the discharge mechanism, and it is necessary to use an auxiliary mechanism. As such an auxiliary mechanism, the present inventor considered using a mechanism that generates ultraviolet rays. In the present invention, a gas sealing means for forming a suitable gas layer is used, and the gas filling means is arranged to be interposed on the microwave propagation path in the vicinity of the processing chamber. In this case, the microwave that is incident on the gas filling means on the propagation path is absorbed by gas molecules and excites them to generate ultraviolet rays. The ultraviolet rays generated from the gas molecules enter the processing chamber and further optically excite the chemical species in the plasma formed within the processing chamber, causing a new dissociation reaction. Alternatively, it enters the substrate to be processed and activates the chemical species adsorbed on its surface, or promotes the formation or desorption of reaction products. On the other hand, since the microwaves that have not passed through the gas filling means enter the processing chamber as they are, the plasma is excited by the microwaves in the same manner as in the conventional plasma processing apparatus.

[0010] As described above, when the plasma processing apparatus of the present invention is used, plasma is excited by both microwaves and ultraviolet rays, so that the plasma density can be greatly increased. Moreover, various treatments on the surface of the substrate to be processed can proceed efficiently by irradiation with ultraviolet rays. Moreover, since ultraviolet rays are generated using part of the microwave energy, there is no need to provide an independent power source for generating ultraviolet rays, and the plasma processing apparatus itself does not need to be enlarged.

[0011]

[Examples] Specific examples of the present invention will be described below.

Embodiment 1 This embodiment is an example in which the present invention is applied to construct a plasma processing apparatus that can perform etching of an Al-based material layer and ashing of a resist mask in a continuous process. This will be explained with reference to FIGS. 1, 2, and 4(a). As shown in FIG. 1, this apparatus includes a load cassette chamber 100 that stores wafers 8 before processing,
An RF bias-applying magnetic field microwave plasma etching device 101 that etches the system material layer, a microwave plasma ashing device 102 that ashes the resist mask, and an unload cassette chamber that stores the processed wafer 8. 103 are successively connected under high vacuum via gate valves.

The magnetic field microwave plasma etching apparatus 101 includes a magnetron 1 that generates microwaves with a frequency of 2.45 GHz, a rectangular waveguide 2 and a circular waveguide 3 that guide the microwaves, and a microwave plasma etching system that utilizes the microwaves. Te EC
A processing chamber 6 for internally generating ECR plasma by R discharge, a quartz panel 4 forming the ceiling of the processing chamber 6 and introducing microwaves, a part of the circular waveguide 3 and the quartz panel 4. A solenoid that is arranged so as to orbit around the 875 Gauss magnetic flux density.
a coil 5, a gas introduction pipe 10 for supplying etching gas into the processing chamber 6 from the direction of arrow B, a wafer susceptor 7 on which the wafer 8 is placed, and a
In order to apply F bias, it is composed of an RF power source 9 and the like connected via a blocking capacitor to block DC components. The inside of the processing chamber 6 is evacuated to a high vacuum in the direction of arrow A in the figure by a vacuum system (not shown). Further, the high vacuum state of the processing chamber 6 can be controlled independently from other parts by operating bellows-shaped gate valves 11a and 11b.

The above is the same as the general configuration of a general magnetic field microwave plasma etching apparatus, but in the present invention, the first Hg vapor-filled tube 12a and the second Hg vapor-filled tube are placed on the quartz panel 4. A Hg vapor filled pipe 12b is provided. The arrangement state of these is shown in FIG. 4(a). Both the first Hg vapor filled tube 12a and the second Hg vapor filled tube 12b are annular, but the second Hg vapor filled tube 12 has a smaller diameter.
a is fixed concentrically with respect to the center
a is arranged so as to be able to eccentrically rotate in the direction of arrow F. In view of the purpose of generating ultraviolet rays using part of the microwave energy, these two are arranged concentrically together like Hg vapor filled tubes 29a and 29b of the microwave plasma ashing device 102, which will be described later. It doesn't matter if it is done. However, the reason why one side is arranged eccentrically in this way is to make the in-plane distribution of the microwave incident power within the processing chamber 6 uniform by utilizing the microwave absorption by Hg vapor. Generally, the waveguide of a microwave plasma etching apparatus is often bent above the processing chamber, as shown in FIG. 1, due to installation space constraints. In this case, the distribution of the incident power of the microwave may become non-uniform due to the influence of the bent portion 2a, so in order to correct this, an auxiliary coil may be provided to generate a rotating magnetic field, or the present application Efforts have been made to improve the shape of the waveguide, as previously proposed in Japanese Patent Application No. 2-254617. However, if the arrangement of the Hg vapor-filled tubes 12a and 12b is arranged as described above, the incident power of the microwave can be corrected without making the device larger or more complicated. In the case shown in Fig. 1, the power tends to be high on the right side of the figure, so the first H
g The steam-filled tube 12a is moved toward the outer circumferential side on the right side.

On the other hand, the microwave plasma ashing device 102 includes a magnetron 21 that generates microwaves with a frequency of 2.45 GHz, a circular waveguide 22 that guides the microwaves, and a device for generating plasma using the microwaves. a processing chamber 24, a quartz panel 23 that constitutes the ceiling of the processing chamber 24 and introduces microwaves;
Etching gas is introduced into the processing chamber 2 from the direction of arrow D.
4, a wafer susceptor 25 on which the wafer 8 is placed, and the like. The inside of the processing chamber 24 is evacuated to a high vacuum in the direction of arrow C in the figure by a vacuum system (not shown). Further, the high vacuum state of the processing chamber 24 is controlled by the bellows-shaped gate valve 2.
By operating 8a and 28b, it can be controlled independently from other parts.

Further, the wafer susceptor 25 houses an infrared lamp 26 for heating the wafer 8 from the rear side during resist ashing, and the wafer mounting surface is made of quartz to transmit the infrared rays. It is composed of a plate 30. Heating the wafer during resist ashing is known in the art;
Japanese Patent No. 281331 discloses a technique in which, after etching an Al--Cu alloy layer, resist ashing is performed while the wafer is heated to 100° C. or higher in a downflow type plasma ashing device. This increases the vapor pressure of CuClx remaining on the wafer surface or
This method attempts to prevent after-corrosion by promoting the reaction between lx and active species to convert it into a compound with a lower vapor pressure, thereby thoroughly removing residual chlorine while removing the resist. However, this prior art uses a built-in heater in the wafer susceptor to heat the wafer, so it takes time to raise the temperature, making it difficult to achieve a practical throughput. On the other hand, the method of heating with an infrared lamp as described above can raise the temperature much more quickly than heating with a heater.

The above magnetic field microwave plasma etching device 101 and microwave plasma ashing device 1
A wafer transfer arm 12 that is rotatable in the direction of arrow E in the figure is disposed in the middle of 02.

The mechanism by which part of the microwave energy is used to generate ultraviolet light in such an apparatus will be explained with reference to FIG. 2. This mechanism includes a magnetic field microwave plasma etching device 101, a microwave plasma etching device 101,
This is common to all of the ashing devices 102, but for convenience of explanation, the latter device in which two annular Hg vapor-filled tubes 29a and 29b are arranged concentrically is shown here. The microwave μ, indicated by a thin arrow, propagates through the circular waveguide 22 (see FIG. 1) and reaches the quartz panel 2.
The light is incident from above 3. Here, the microwave μ incident on the exposed surface of the quartz panel 23 directly passes through the quartz panel 23 and reaches the processing chamber 24 (see FIG. 1), where it enters the gas supply pipe 27 (see FIG. 1). ) is dissociated by microwave discharge to generate plasma. On the other hand, Hg steam-filled tubes 29a and 29b
The microwave μ that is incident upon excites Hg molecules and generates ultraviolet light hν, which is indicated by a thick white arrow. This ultraviolet ray is actually emitted in all directions, but for convenience of illustration, only the component that passes through the quartz panel 23 and enters the processing chamber 24 (see FIG. 1) is depicted here. It is. This ultraviolet light hv also contributes to plasma excitation. In other words, since the plasma is excited by both the microwave μ and the ultraviolet light hν, it is possible to achieve even higher plasma density beyond the limit of plasma density due to the contrivance of the discharge mechanism. In addition, the ultraviolet light hv that has reached the wafer 8 activates various surface reactions and promotes the generation and desorption of reaction products, contributing to an improvement in plasma processing efficiency.

In such a configuration, the ultraviolet light hν is generated using part of the energy of the microwave μ, so that
There is no need to separately prepare a power source for generating ultraviolet rays hv. Furthermore, the Hg vapor filled tubes 29a and 29b are circular waveguides 2
Since it can be installed in the space within 2, the existing equipment will not be enlarged at all.

Embodiment 2 This embodiment is a modification of the gas filling means of the microwave plasma ashing apparatus 102 in Embodiment 1 described above. In this example, as shown in FIG. 3, a somewhat thick quartz panel 40 was used. The quartz panel 40 includes:
Annular cavities 41a and 41b are formed by hollowing out a portion in the thickness direction at the surface facing the wafer 8, and Hg vapor is sealed in the cavities 41a and 41b. This corresponds to the configuration in which the Hg vapor filled tubes 29a and 29b shown in FIG. 2 described above are built into the main body of the quartz panel 23. The mechanism of generating ultraviolet rays hv by microwave μ is the same as in Example 1.

Embodiment 3 This embodiment is a modification of the gas filling means of the magnetic field microwave plasma etching apparatus 101 in Embodiment 1 described above. In this embodiment, as shown in FIG. 4(b), a semicircular arc-shaped Hg vapor filling tube 12c is disposed on the outer circumferential side of the second Hg vapor introduction tube 12b on the inner circumferential side. In the state shown in FIG. 1, the power of the microwave tends to increase on the right side due to the influence of the bent part 2a of the rectangular waveguide 2. Therefore, as shown in FIG. The tube 12c is disposed on the right side of the center X to increase the amount of microwave absorption. In this case, Hg vapor filled tube 1
If 2c is arranged so as to be rotatable around the center X in the direction of arrow G in the figure, it is also possible to finely adjust the in-plane distribution of the incident power according to the microwave power.

Embodiment 4 This embodiment is still another modification of the gas filling means of the magnetic field microwave plasma etching apparatus 101 in Embodiment 1 described above. In this example, as shown in FIG. 4(c), Hg vapor filled tubes 12d to 12k are disposed on the outer circumferential side of the second Hg vapor filled tube 12b on the inner circumferential side. These eight Hg vapor filled tubes 12d to 12k are arranged so as to form a broken ring as a whole,
The length is longer as it is disposed on the right side in the figure. This is a contrivance to absorb extra microwaves on the right side and to make the generation of ultraviolet rays as uniform as possible within the plane. Moreover, if these Hg vapor filled tubes 12d to 12k are collectively rotated around the center X in the direction of the arrow H, the in-plane distribution of the incident power can be finely adjusted according to the microwave power.

A specific example of the configuration of the plasma processing apparatus according to the present invention has been described above.
Examples of etching and resist ashing processes will be described.

Process Example 1 The wafer 8 used in this process example has an Al-1% Si layer formed by sputtering or the like on a SiO2 interlayer insulating film, and a resist mask patterned into a predetermined shape is further formed on the Al-1% Si layer. It is something that is formed. In this process example, when etching an Al-1%Si layer to form an Al-based wiring pattern, the Al-1%S
Before over-etching the i-layer, the side walls of the Al-based wiring pattern are oxidized with O2 plasma to form an AlO
A passive film of x was formed. That is, first, the wafer 8 is set on the wafer susceptor 7 in the magnetic field microwave plasma etching apparatus 101 shown in FIG.
As an example, BCl3 flow rate is 60SCCM, Cl2 flow rate is 90SCCM, gas pressure is 2.1Pa (16mTorr),
Microwave power 850W, RF bias power 50
The Al-1%Si layer was etched to almost a just-etched state under the condition of W (2 MHz).

Next, as an example, the O2 flow rate is 200 SCC.
M, A under the conditions of gas pressure 2.1 Pa (16 mTorr), microwave power 850 W, and RF bias power 0 W.
The side walls of the l-based wiring pattern were oxidized to form a passive film made of AlOx (particularly Al2O3). Various techniques have been proposed in the past for passivating the sidewalls of Al-based wiring patterns through plasma oxidation.
In either case, it was not possible to form a passive film with sufficiently dense film quality. However, by using the plasma processing apparatus of the present invention, it is possible to uniformly generate plasma with a higher density than conventional methods using ultraviolet rays generated using part of the microwave energy, and a passive film with excellent film quality. was able to form.

Next, as an example, the BCl3 flow rate is 60SC.
CM, Cl2 flow rate 90SCCM, gas pressure 2.1Pa (
The above Al-
Over-etching of the 1% Si layer was performed. here,
In order to increase the selectivity to the underlying layer, the bias conditions are lowered compared to the steps up to just etching, making it easier for the anisotropy to decrease. With conventional technology, the passive film formed on the sidewalls of the pattern was not dense, so if over-etching was performed for a long time, the sidewalls of the pattern could not withstand the attack of radicals, resulting in shape abnormalities such as undercuts. Was. However, in this process example, the pattern sidewalls are protected by a dense passive film, so
Good anisotropic shape was maintained.

Next, the above-described wafer 8 is transferred to the microwave plasma ashing device 102, and as an example, the wafer 8 is
Flow rate 200SCCM, (CH3)2 CHOH (isopropanol) flow rate 20SCCM, gas pressure 159.6P
a (1.2 Torr), magnetron filament current 500 mA, and wafer temperature 200°C.
Ashed the mask. The composition of this ashing gas was previously proposed by the applicant in Japanese Patent Application No. 3-20635. (CH3)2CH
OH is aluminum oxychloride (AlOx Cly), which is an etching reaction product remaining on the wafer surface.
) with low vapor pressure (iso-OC3 H7) x
For example, O2 /CH3
This method is even more effective in removing residual chlorine than ashing using an OH mixed gas. In addition, in the plasma processing apparatus of the present invention, wafer heating is also used, the plasma density is increased by the generation of ultraviolet rays, and the surface reaction on the eight wafer surfaces is promoted by ultraviolet irradiation. For these reasons, resist ashing was performed extremely quickly and residual chlorine was thoroughly removed. The wafer 8 that had undergone the above process was taken out into the atmosphere.
The time it took for after-corrosion to occur was more than three times longer than for wafers that underwent a similar process using conventional plasma processing equipment that did not use UV irradiation.

Process Example 2 In this process example, before over-etching the Al-1%Si layer, residual chlorine was removed in the form of HCl by performing plasma treatment using a hydrogen-based gas. First, a wafer 8 similar to that used in process example 1 is set in a magnetic field microwave plasma etching apparatus 101, and as an example, a BCl3 flow rate of 60SCCM, Cl2
Flow rate 90SCCM, gas pressure 2.1Pa (16mTorr)
), microwave power of 850 W, and RF bias power of 50 W (2 MHz), the Al-1% Si layer was etched to almost a just-etched state.

Next, as an example, the Ar flow rate is 100SCCM.
, H2 flow rate 50SCCM, gas pressure 4Pa (30mTo
rr), under the conditions of microwave power 850W and RF bias power 0W, Al was applied to the side walls of the Al-based wiring pattern.
The remaining chlorine in the form of Clx, AlOx Cly, etc. was removed in the form of HCl. The removal of residual chlorine using this gas system was previously proposed by the applicant in Japanese Patent Application No. 3-71304. By removing residual chlorine from the sidewalls of the pattern in advance, even if re-deposit resulting from sputter removal of the underlying layer is deposited on the sidewalls of the pattern in a later over-etching step, the chlorine will not be trapped. In this process example, a high-density H plasma is formed with the assistance of ultraviolet rays, and HC
The production reaction of chlorine was promoted, and residual chlorine could be effectively removed.

Next, as an example, the BCl3 flow rate is 60SC.
CM, HCl flow rate 100SCCM, Cl2 flow rate 40S
CCM, gas pressure 2.1 Pa (16 mTorr), microwave power 850 W, RF bias power 30 W (2
The Al-1%Si layer was over-etched under the following conditions: (MHz). This over-etching did not cause any deterioration of the anisotropic shape. Furthermore, resist ashing was performed in the same manner as in Process Example 1. In this process example as well, the after-corrosion resistance of the wafer 8 was improved more than three times that of the conventional process.

Although the process examples of etching the Al-based material layer and resist ashing have been described above, there are various other processes in which the plasma processing apparatus of the present invention can be effectively utilized. For example, in trench etching, a subtrench may be formed at the corner of the trench bottom, but if ultraviolet irradiation is also used, the reaction probability increases in the center of the trench bottom due to the action of high-density plasma, and eventually The shape of the corner part can be corrected to a rounded shape.

[0032]

Effects of the Invention As is clear from the above explanation, the plasma processing apparatus of the present invention uses a part of microwave energy to generate ultraviolet rays from a gas layer interposed in the microwave propagation path. The structure is such that ultraviolet rays can be irradiated into the processing chamber together with microwaves. Therefore, it is possible to generate high-density plasma without increasing the size of the apparatus or reducing economic efficiency, and to promote reactions on the wafer surface, thereby significantly improving processing speed or processing efficiency compared to the conventional method. Furthermore, by carefully arranging the gas layer, the in-plane distribution of microwave incident power can be corrected, so that even large-diameter wafers can be processed uniformly. Therefore, the plasma processing apparatus of the present invention is promising as an apparatus for performing uniform, high-speed single-wafer processing while maintaining low damage properties on large-diameter wafers, and is particularly applicable to patterning of Al-based material layers. In this case, after-corrosion can be extremely effectively prevented.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view showing an example of a configuration of a plasma processing apparatus to which the present invention is applied and configured to perform etching of an Al-based material layer and ashing of a resist mask in a continuous process.

FIG. 2 is a partially cutaway view showing an example of the configuration of a gas filling means of a microwave plasma ashing device in the plasma processing device shown in FIG. 1, and a schematic perspective view illustrating the mechanism of generating ultraviolet light by microwave excitation. It is a diagram.

FIG. 3 is a partially cutaway view showing another example of the configuration of the gas filling means of the microwave plasma ashing device, and is a schematic perspective view illustrating a mechanism for generating ultraviolet rays by microwave excitation.

FIG. 4 is a schematic plan view showing three types of configuration examples of gas filling means of a magnetic field microwave plasma etching apparatus.

[Explanation of symbols]

1,21...Magnetron 2
...Rectangular waveguide 3, 22
...Circular waveguides 4, 23, 40...Quartz panels 6, 24...Processing chambers 7, 25
...Wafer susceptor 8
. . . Wafers 12a to 12j . . . Hg gas-filled tube 26 (of the magnetic field microwave plasma etching apparatus) . . . Infrared lamp 29a,
29b...Hg gas filled tube 30 (of the microwave plasma ashing device)...Quartz plates 41a, 41b
... Cavity part 101 ... Magnetic field microwave plasma etching device 102 ... Microwave plasma ashing device

Claims (1)

[Claims] 1. A plasma processing apparatus that processes a substrate to be processed using plasma excited by microwaves in a processing chamber, the plasma processing apparatus comprising: a plasma processing apparatus that processes a substrate to be processed using plasma excited by microwaves in a processing chamber; . A plasma processing apparatus comprising a gas sealing means for forming a gas layer, and irradiating the inside of the processing chamber with ultraviolet rays generated from the gas layer excited by a part of the energy of the microwave and the microwave.