JPH04337638A - Protecting method of electronic parts - Google Patents

Abstract

PURPOSE:To reduce troubles caused by defects like microcrack, etc., of an electronic part. CONSTITUTION:A protective coat 15 such as silicon nitride film is formed by plasma CVD method on the external surface of a chip-type electronic part 12 mounted on the surface of a package base 11 and the sealing process of the chip-type electronic parts is conducted thereafter. Because the protective coat 5 protects the chip-type electronic part 12 by covering the part, the progress of defects like microcrack, etc., is suppressed, even if such defects exist, so that it is possible to reduce troubles caused by the microcrack, etc., and to improve reliability.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] This invention relates to a method for protecting electronic components, and more particularly, to a method for protecting electronic components that can reduce failures caused by microcracks that occur during assembly processes and which cannot be effectively inspected. be.

0002

2. Description of the Related Art In the case of many electronic parts, the manufacturing process includes an assembly process, and the reliability of the electronic parts may be lowered due to mechanical stress caused by the assembly process.

FIGS. 4 to 6 show some examples of assembly processes for chip-type semiconductor electronic components, and FIG. 4 shows the process of dividing a semiconductor wafer 1 into a large number of chip-type electronic components 2, in which a scriber, Mechanical stress is applied to the chip type electronic component 2 by the breaker.

FIG. 5 shows the process of bonding a chip electronic component 2 to a package by die bonding, and mechanical stress is applied to the chip electronic component 2 by the die bonder.

Further, FIG. 6 shows a wire bonding operation in which the electrodes of the chip type electronic component 2 and the external electrodes 4 of the package 3 are electrically connected by a metal wire 5 or the like, and mechanical stress is applied by the wire bonder.

As mentioned above, when mechanical stress is applied to the chip-type electronic component 2, defects such as cracks and chips occur, but defects that can be detected by visual inspection are usually eliminated by in-process inspection such as visual inspection. can.

[0007]

[Problems to be Solved by the Invention] However, there is a problem in that defects such as microcracks that are difficult to detect visually are overlooked and become a cause of product failure in the market.

Therefore, the present invention provides a method for protecting electronic components that can reduce failures caused by defects such as microcracks that occur during the assembly process and cannot be effectively inspected, and improve reliability. The purpose is to provide.

[0009]

[Means for Solving the Problems] In order to solve the above problems, the present invention forms a protective film on the outer surface of the electronic component before the sealing process of the electronic component mounted on the base surface of the package. This method was adopted.

0010

[Operation] After electronic components are mounted on the base surface of the package, a protective film is applied and formed on the outer surface of the electronic components using the plasma CVD method, and then a sealing process is performed to protect the electronic components. Protected by the film, even if microcracks exist, the occurrence of defects due to them can be suppressed and failures can be reduced.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to FIGS. 1 to 3 of the accompanying drawings.

The drawings show an example of wire bonding as an assembly process for chip-type electronic components, and as shown in FIG. Connected by metal wire 13.

A protective film 15, such as a silicon nitride film, is deposited on the outer surface of the chip-type electronic component 12 and the surface of the package base 11 using the plasma CVD method as shown by the arrows in the figure.

Materials used for forming the protective film 15 include:
For example, SiN, SiO, SiON, etc. can be used, and the plasma CVD method for forming the protective film 15 can easily form a thin film with good environmental resistance such as SiN, and has good step coverage and can be used to Furthermore, since the film formation temperature is relatively low, it has the advantage that it can be applied to assembly materials with low heat resistance.

After forming the protective film 15 as described above, the cap 16 is attached onto the package 11 so as to cover the chip type electronic component 12 as shown in FIG.
After that, as shown in FIG. 3, the protective film adhering to the external terminal 14 is removed by wet or dry etching.

Since the outer surface of the chip-type electronic component 12 sealed on the package 11 is protected by being covered with a protective film 15 such as a silicon nitride film, it is difficult to visually detect microcracks or the like during the assembly process. Protective film 1 prevents the progression of microcracks, etc. even if there are areas that cannot be prevented.
5, thereby reducing the occurrence of failures due to defects such as microcracks.

Although the illustrated embodiment shows sealing using the base 11 and cap 16, a molded package using a lead frame, for example, can be similarly handled.

[0018]

As described above, according to the present invention, a protective film is formed on the outer surface of the electronic component before being sealed on the base of the package. Even if there are defects that are difficult to eliminate, the protective film can suppress the progression of microcracks, etc., thereby reducing the occurrence of failures caused by defects such as microcracks, and improving the reliability of electronic components. can be done.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing a protective film forming step of the protection method of the present invention.

FIG. 2 is an explanatory diagram showing the sealing process of the protection method of the present invention.

FIG. 3 is an explanatory diagram showing a step of removing a protective film on an external electrode in the protection method of the present invention.

FIG. 4 is an explanatory diagram showing scribing of a semiconductor wafer.

FIG. 5 is an explanatory diagram showing die bonding of a chip-type electronic component.

FIG. 6 is an explanatory diagram showing a wire bond of a chip-type electronic component.

[Explanation of symbols]

11 Package base 12 Chip type electronic components 14 External electrode 15 Protective film 16 Package cap

Claims (2)

[Claims] 1. A method for protecting an electronic component, comprising forming a protective film on the outer surface of the electronic component before a sealing process for the electronic component mounted on the base surface of a package. 2. The method for protecting electronic components according to claim 1, wherein the protective film is formed by a plasma CVD method.