JPH04337380A - Heat-resistant photo-sensitive polyimide adhesive - Google Patents
Heat-resistant photo-sensitive polyimide adhesiveInfo
- Publication number
- JPH04337380A JPH04337380A JP20500891A JP20500891A JPH04337380A JP H04337380 A JPH04337380 A JP H04337380A JP 20500891 A JP20500891 A JP 20500891A JP 20500891 A JP20500891 A JP 20500891A JP H04337380 A JPH04337380 A JP H04337380A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- polyamic acid
- btda
- ppd
- hereinafter abbreviated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 44
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 44
- 229920001721 polyimide Polymers 0.000 title claims description 12
- 239000004642 Polyimide Substances 0.000 title claims description 10
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 16
- 150000004985 diamines Chemical class 0.000 claims abstract description 10
- 150000001412 amines Chemical class 0.000 claims abstract description 9
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 claims abstract description 9
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims abstract description 3
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 claims abstract description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000003868 ammonium compounds Chemical class 0.000 claims description 8
- 150000008064 anhydrides Chemical class 0.000 claims description 5
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 abstract 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 abstract 1
- 108010056230 butyloxycarbonyl-phenylalanyl-prolyl-arginine Proteins 0.000 abstract 1
- 239000002966 varnish Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000002904 solvent Substances 0.000 description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- -1 acid amide compound Chemical class 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000002313 adhesive film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000003504 photosensitizing agent Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical group C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、特にエレクトロニクス
分野における半導体素子の組立等に有用な、高耐熱であ
りなおかつ従来よりも少ない工程での加工が可能な耐熱
感光性ポリイミド接着剤及びその使用方法に関するもの
である。[Industrial Field of Application] The present invention relates to a heat-resistant photosensitive polyimide adhesive that is highly heat-resistant and can be processed in fewer steps than conventional adhesives, which is particularly useful in the assembly of semiconductor elements in the electronics field, and a method for using the same. It is related to.
【0002】0002
【従来の技術】近年半導体の高速化、高密度化の進行に
よりマルチチップモジュール等の新しい半導体装置が開
発されている。これは、多層回路を構成した基板上に複
数の半導体素子を実装し、極めて高密度の回路構成を可
能としたものである。この半導体素子の基板への実装時
には、両者の接着面内での回路の接続を伴う。そのため
、両者の接着剤として、回路接続用の半田処理に耐え得
る高い耐熱性(250℃以上)が必要とされている。
このような高い耐熱性を有する両者の接着剤として極め
て有用であるものとしてポリイミド系の樹脂が挙げられ
る。この樹脂は、熱分解温度が500℃以上と極めて高
く、半田実装時の高温に充分耐え得る高い耐熱性を有し
ている。2. Description of the Related Art In recent years, new semiconductor devices such as multi-chip modules have been developed as semiconductors become faster and more dense. This enables extremely high-density circuit configuration by mounting multiple semiconductor elements on a multilayer circuit board. When this semiconductor element is mounted on a substrate, circuits are connected within the adhesive surface between the two. Therefore, the adhesive for both is required to have high heat resistance (250° C. or higher) that can withstand the soldering process for circuit connection. Polyimide resins are extremely useful as such adhesives having high heat resistance. This resin has an extremely high thermal decomposition temperature of 500° C. or more, and has high heat resistance that can sufficiently withstand high temperatures during solder mounting.
【0003】さらに、両者の接着面内には配線用のコン
タクトホールを形成する必要がある。従来のポリイミド
系接着剤でのコンタクトホール形成にはフォトレジスト
を使用してのヒドラジンあるいはプラズマ照射等による
ホール部の樹脂除去を行う必要がある。しかしこれらの
加工工程はレジストの塗布あるいは除去等の新たな工程
の追加とともに、有害な薬品や特殊な装置を使用する煩
雑なものである。Furthermore, it is necessary to form a contact hole for wiring within the bonding surface between the two. To form a contact hole using a conventional polyimide adhesive, it is necessary to remove the resin from the hole portion by hydrazine or plasma irradiation using a photoresist. However, these processing steps are complicated and require the addition of new steps such as resist coating or removal, as well as the use of harmful chemicals and special equipment.
【0004】0004
【発明が解決しようとする課題】本発明の目的とすると
ころは、高い耐熱性を有するとともに易加工性をも合わ
せ持つ耐熱感光性ポリイミド接着剤を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat-resistant, photosensitive polyimide adhesive that has both high heat resistance and easy processability.
【0005】[0005]
【課題を解決するための手段】本発明は、(A)3,3
’,4,4’−ビフェニルテトラカルボン酸二酸無水物
(以下BPDAと略記)、3,3’,4,4’−ベンゾ
フェノンテトラカルボン酸二酸無水物(以下BTDAと
略記)、p−フェニレンジアミン(以下PPDと略記)
、1,3−ビス(3−アミノフェノキシ)ベンゼン(以
下APBと略記)を必須成分とする二酸無水物及びジア
ミンの組合せから合成されるポリアミド酸、(B)二量
化あるいは重合が可能な炭素−炭素二重結合を有するア
ミン、アンモニウム化合物あるいは酸アミド化合物の二
成分を必須成分とし、必要に応じて光増感剤等を添加し
た耐熱感光性ポリイミド接着剤である。[Means for Solving the Problems] The present invention provides (A) 3,3
',4,4'-biphenyltetracarboxylic dianhydride (hereinafter abbreviated as BPDA), 3,3',4,4'-benzophenonetetracarboxylic dianhydride (hereinafter abbreviated as BTDA), p-phenylene Diamine (hereinafter abbreviated as PPD)
, a polyamic acid synthesized from a combination of a dianhydride and a diamine containing 1,3-bis(3-aminophenoxy)benzene (hereinafter abbreviated as APB) as an essential component, (B) carbon capable of dimerization or polymerization; - It is a heat-resistant, photosensitive polyimide adhesive containing two essential components: an amine having a carbon double bond, an ammonium compound, or an acid amide compound, and a photosensitizer or the like added as necessary.
【0006】[0006]
【作用】本発明による接着剤の特徴の一つは、高耐熱性
を実現するためにポリイミド前駆体としてのポリアミド
酸構造を有している。これは、加熱硬化後には耐熱性に
優れたポリイミド構造に変化するものである。ところが
、一般的なポリイミドは、基板に対する接着性が小さい
。そこで、本発明においては上記BTDA、BPDA、
PPD及びAPBを必須成分とする二酸無水物及びジア
ミンの組み台わせを用いることにより、特に基板がシリ
コン、ガラス、アルミナ等の場合きわめて優れた接着強
度を得ている。[Operation] One of the characteristics of the adhesive according to the present invention is that it has a polyamic acid structure as a polyimide precursor in order to realize high heat resistance. After heat curing, this material changes into a polyimide structure with excellent heat resistance. However, general polyimide has poor adhesion to substrates. Therefore, in the present invention, the above-mentioned BTDA, BPDA,
By using a combination of diacid anhydride and diamine containing PPD and APB as essential components, extremely excellent adhesive strength is obtained, especially when the substrate is silicon, glass, alumina, etc.
【0007】これらBTDA、BPDA、PPD及びA
PBの仕込量は、望ましくはそれぞれ全二酸無水物に対
し70〜80モル%、15〜25モル%、全ジアミンに
対し60〜90モル%、10〜40%である。これらの
二酸無水物あるいはジアミンは、いずれの成分が上記の
割合をはずれても接着強度あるいは耐熱性が低下する。
また、全二酸無水物と全ジアミンの比は望ましくは0.
9〜1.1である。比がこの範囲から外れると樹脂の分
子量が低下し、ワニスの粘度が低下する、光加工時の感
度が低下する当の問題が発生しやすい。このポリアミド
酸は、上記の二酸無水物とジアミンを、好ましくは10
℃以上80℃以下の温度でN,N−ジメチルホルムアミ
ド、N,N−ジメチルアセトアミド、N−メチル−2−
ピロリドン等の溶媒中で開環重付加反応することによっ
て得ることができる。These BTDA, BPDA, PPD and A
The amount of PB to be charged is preferably 70 to 80 mol% and 15 to 25 mol%, and 60 to 90 mol% and 10 to 40%, respectively, based on the total diacid anhydride. If the proportion of any of these dianhydrides or diamines exceeds the above range, the adhesive strength or heat resistance will decrease. Further, the ratio of all diacid anhydrides to all diamines is desirably 0.
It is 9-1.1. When the ratio is out of this range, the molecular weight of the resin decreases, which tends to cause problems such as a decrease in the viscosity of the varnish and a decrease in sensitivity during optical processing. This polyamic acid preferably contains the above diacid anhydride and diamine at 10%
N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2- at a temperature of ℃ to 80℃
It can be obtained by ring-opening polyaddition reaction in a solvent such as pyrrolidone.
【0008】本発明の大きな特徴は、接着剤としての組
成中に二量化あるいは重合が可能な炭素−炭素二重結合
を有するアミン、アンモニウム化合物あるいは酸アミド
化合物と必要に応じての光増感剤等を添加し、感光性を
付与したことである。これにより、フォトレジストの新
たな塗布なしに、本樹脂へのマスクを通しての要除去部
以外の露光、現像による未露光部の樹脂の溶解除去とい
う単純かつ容易な工程によりコンタクトホールの加工が
可能となった。A major feature of the present invention is that an amine, ammonium compound, or acid amide compound having a dimerizable or polymerizable carbon-carbon double bond is included in the composition of the adhesive, and if necessary, a photosensitizer. etc., to impart photosensitivity. This makes it possible to process contact holes through a simple and easy process of exposing the resin through a mask to areas other than the areas that need to be removed, and developing to dissolve and remove the resin in the unexposed areas, without having to apply new photoresist. became.
【0009】樹脂の除去に使用する現像液も有機溶剤の
ため、ヒドラジン等のような有害性も有さず、環境汚染
の可能性も小さい。また、アミン、アンモニウム化合物
あるいは酸アミド化合物、光増感剤等は現像後の硬化時
に分解揮散し樹脂中に残存しないため、最終的にはポリ
イミド樹脂本来の高い接着性と耐熱性とを発現すること
ができる。Since the developer used to remove the resin is also an organic solvent, it does not have the same harmful effects as hydrazine and the like, and there is little possibility of environmental pollution. In addition, amines, ammonium compounds, acid amide compounds, photosensitizers, etc. decompose and volatilize during curing after development and do not remain in the resin, resulting in the high adhesiveness and heat resistance inherent to polyimide resins. be able to.
【0010】このようなアミン、アンモニウム化合物あ
るいは酸アミド化合物の例としては、メタクリル酸N,
N−ジメチル−3−プロピル、メタクリル酸N,N−ジ
メチル−2−エチル、メタクリル酸N,N−ジエチル−
3−プロピル、アクリル酸N,N−ジメチル−3−プロ
ピル、N,N−ジメチルアクリルアミド、N−メチルア
クリルアミド、アクリルアミド、メタクリルアミド、N
,メチロールアクリルアミド等をあげることができる。Examples of such amines, ammonium compounds or acid amide compounds include methacrylic acid N,
N-dimethyl-3-propyl, N,N-dimethyl-2-ethyl methacrylate, N,N-diethyl-methacrylate
3-propyl, N,N-dimethyl-3-propyl acrylate, N,N-dimethylacrylamide, N-methylacrylamide, acrylamide, methacrylamide, N
, methylol acrylamide, etc.
【0011】このようなアミン、アンモニウム化合物あ
るいは酸アミド化合物の添加量は、その種類にもよるが
、概ねポリアミド酸100重量部に対して1重量部以上
1000重量部以下が望ましい。1重量部未満では光加
工時に実用的な感度が得られず、1000重量部よりも
多いと接着剤ワニスの粘度が著しく低下し、良好な接着
剤フィルムや基板上への塗膜の形成が困難となる。[0011] The amount of such amine, ammonium compound or acid amide compound to be added depends on the type thereof, but is desirably 1 part by weight or more and 1000 parts by weight or less per 100 parts by weight of polyamic acid. If it is less than 1 part by weight, practical sensitivity cannot be obtained during optical processing, and if it is more than 1000 parts by weight, the viscosity of the adhesive varnish will decrease significantly, making it difficult to form a good adhesive film or coating on the substrate. becomes.
【0012】さらに、必要に応じてミヒラーズケトン等
の光増感剤等を系中に添加することによりより少ない露
光エネルギーでの光加工が可能となる。又、同時に系中
に熱重合禁止剤、レベリング剤等を添加することも可能
である。Furthermore, by adding a photosensitizer such as Michler's ketone to the system as necessary, optical processing can be performed with less exposure energy. It is also possible to simultaneously add a thermal polymerization inhibitor, a leveling agent, etc. to the system.
【0013】本発明による接着剤は、有機溶剤に溶解し
たワニス状あるいはフィルム状での使用が可能である。
この接着剤ワニスは、上記合成反応終了後のポリアミド
酸反応溶液中に上述のアミン、アンモニウム化合物ある
いは酸アミド化合物、必要に応じた増感剤等を添加、溶
解することにより得られる。さらに一部のアミン、アン
モニウム化合物あるいは酸アミド化合物については、ポ
リアミド酸の反応溶媒としての使用も可能で、より簡便
に接着剤ワニスを得ることができる。The adhesive according to the present invention can be used in the form of a varnish or a film dissolved in an organic solvent. This adhesive varnish can be obtained by adding and dissolving the above-mentioned amine, ammonium compound or acid amide compound, a sensitizer as required, etc. into the polyamic acid reaction solution after the completion of the above-mentioned synthesis reaction. Furthermore, some amines, ammonium compounds, or acid amide compounds can be used as a reaction solvent for polyamic acid, and adhesive varnish can be obtained more easily.
【0014】そしてこの接着剤ワニスを基板上へ塗布、
溶媒の蒸発、除去したい部分を覆う形のマスクを通して
の露光、現像、乾燥の後接着を要する別の基板を重ね合
わせ、加熱圧着させることにより接着を行うことができ
る。接着剤ワニスの塗布はスピンコーターやバーコータ
ー、ダイコーター等によって、溶媒の蒸発除去はホット
プレート上や熱風循環乾燥器中50〜150℃で行うこ
とが可能である。露光は紫外/可視光線、X線、電子線
、エキシマーレーザー等によって行うことができるが、
高圧水銀灯等からの紫外線の使用が好ましい。露光後、
有機溶媒により未露光部の接着剤塗膜を溶解除去する。[0014] Then, applying this adhesive varnish onto the substrate,
After evaporation of the solvent, exposure through a mask that covers the portion to be removed, development, and drying, adhesion can be performed by overlapping another substrate that requires adhesion and bonding under heat and pressure. The adhesive varnish can be applied using a spin coater, a bar coater, a die coater, etc., and the solvent can be removed by evaporation on a hot plate or in a hot air circulation dryer at 50 to 150°C. Exposure can be performed using ultraviolet/visible light, X-rays, electron beams, excimer lasers, etc.
Preferably, ultraviolet light is used, such as from a high-pressure mercury lamp. After exposure,
The adhesive coating in the unexposed areas is dissolved and removed using an organic solvent.
【0015】現像液としては、N,N−ジメチルホルム
アミド、N,N−ジメチルアセトアミド、N−メチル−
2−ピロリドン等のポリアミド酸をよく溶解する溶媒を
主成分として、そこに樹脂構造により適量のメチルアル
コール、エチルアルコール等の貧溶媒を添加したものを
用いる。現像後、メチルアルコール、エチルアルコール
等の溶媒でリンスすることによって光加工されたポリア
ミド酸の塗膜が得られる。熱風乾燥器等による最高温度
200〜300℃の乾燥の後接着を要する別の基板を重
ね合わせ、温度300〜400℃、圧力10〜100k
g/mm2で加熱圧着することにより高接着強度ととも
に高耐熱の接着が可能となる。As the developer, N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-
The main component is a solvent that dissolves polyamic acid such as 2-pyrrolidone well, and an appropriate amount of a poor solvent such as methyl alcohol or ethyl alcohol is added thereto depending on the resin structure. After development, a photoprocessed polyamic acid coating film is obtained by rinsing with a solvent such as methyl alcohol or ethyl alcohol. After drying at a maximum temperature of 200 to 300°C using a hot air dryer, etc., another substrate that requires adhesion is layered, and the temperature is 300 to 400°C and the pressure is 10 to 100K.
By heat-pressing at g/mm2, it becomes possible to bond with high adhesive strength and high heat resistance.
【0016】一方、この接着剤フィルムは、この接着剤
ワニスを基板上に塗布し、溶媒を蒸発させた後基板より
剥離させて得ることができる。一方、フィルム状での使
用の場合、まず接着剤フィルムを基板上に貼り合わせれ
ば、後の露光、現像、乾燥、別の基板を重ね合わせ、加
熱圧着に至る操作は、上記の接着剤ワニスを使用する場
合とまったく同等である。いずれの使用法でも接着後の
特性の差はなく、用途に応じた加工方法により耐熱性お
よび加工性にすぐれた接着が可能となる。On the other hand, this adhesive film can be obtained by applying this adhesive varnish onto a substrate, evaporating the solvent, and then peeling it off from the substrate. On the other hand, in the case of using it in film form, the adhesive film is first pasted onto the substrate, and the subsequent operations of exposure, development, drying, overlaying another substrate, and heat-pressing are performed using the adhesive varnish described above. It is exactly the same as when used. Regardless of the usage method, there is no difference in the properties after adhesion, and adhesion with excellent heat resistance and processability is possible depending on the processing method depending on the application.
【0017】[0017]
【実施例】以下実施例により本発明を具体的に説明する
が、本発明が以下の実施例に限定されないことはいうま
でもない。[Examples] The present invention will be specifically explained below with reference to Examples, but it goes without saying that the present invention is not limited to the following Examples.
【0018】(実施例1)
■ポリアミド酸ワニス(I)の合成
BPDA20.60g(0.07モル)、BTDA9.
67g(0.03モル)をN−メチル−2−ピロリドン
(以下NMPと略記)200mlに溶解したものにPP
D7.57g(0.07モル)、APB12.07g(
0.03モル)を系中温度20℃で添加し、乾燥窒素下
で3時間そのまま系中の温度を20℃に制御しながら攪
拌することによりワニス状の(I)が得られた。(Example 1) (1) Synthesis of polyamic acid varnish (I) 20.60 g (0.07 mol) of BPDA, 9.0 g (0.07 mol) of BTDA.
67g (0.03 mol) dissolved in 200ml of N-methyl-2-pyrrolidone (hereinafter abbreviated as NMP) was added with PP.
D7.57g (0.07mol), APB12.07g (
A varnish-like (I) was obtained by adding 0.03 mol) at a system temperature of 20°C and stirring under dry nitrogen for 3 hours while controlling the system temperature at 20°C.
【0019】■接着剤ワニス(II)の調製ポリアミド
酸ワニス(I)100重量部にメタクリル酸N,N−ジ
メチル−3−プロピル5重量部、ミヒラーズケトン1重
量部を添加、室温で攪拌、溶解させることにより接着剤
ワニス(II)を得た。■Preparation of adhesive varnish (II) Add 5 parts by weight of N,N-dimethyl-3-propyl methacrylate and 1 part by weight of Michler's ketone to 100 parts by weight of polyamic acid varnish (I), and stir and dissolve at room temperature. This gave adhesive varnish (II).
【0020】■シリコン板の接着
シリコン板上に接着剤ワニス(II)をディスペンス、
スピンコーターにより溶媒蒸発後の厚みが約15μmに
なるように均一に塗布した後熱風循環乾燥器中で80℃
60分加熱し溶媒を蒸発させた。次に配線接続部を覆う
マスクを通して高圧水銀灯からの紫外線を1000mJ
/cm2照射し、NMPとメタノールの混合溶媒中で2
分間浸漬し、未露光部の樹脂を溶解除去した後2−プロ
パノールでリンスした。このようにして接着剤パターン
の形成された基板を150℃60分、次いで250℃6
0分で乾燥した後もう一枚のシリコン基板を接着剤面に
のせ、350℃、50kg/cm2で5分間加熱圧着す
ることにより2枚の基板を接着した。■ Adhesion of silicone plate Dispense adhesive varnish (II) onto the silicone plate,
After the solvent was applied evenly using a spin coater so that the thickness after evaporation of the solvent was approximately 15 μm, it was dried at 80°C in a hot air circulation dryer.
The solvent was evaporated by heating for 60 minutes. Next, 1000mJ of ultraviolet rays from a high-pressure mercury lamp was applied through a mask covering the wiring connections.
/cm2 in a mixed solvent of NMP and methanol.
After dipping for a minute, the resin in the unexposed area was dissolved and removed, and then rinsed with 2-propanol. The substrate on which the adhesive pattern was formed in this way was heated at 150°C for 60 minutes, then at 250°C for 60 minutes.
After drying for 0 minutes, another silicon substrate was placed on the adhesive surface, and the two substrates were bonded together by heating and pressing at 350° C. and 50 kg/cm 2 for 5 minutes.
【0021】■接着強度の測定
上述のように接着した二枚のシリコン板を縦10mm横
5mmの直方体状に切り出し、その接着面に剪断力をか
けて、剥離を起こさせるのに必要な力を接着強度として
測定した。その結果、接着強度は670kg/mm2と
大きなものであった。■Measurement of adhesive strength The two silicon plates bonded as described above were cut into a rectangular parallelepiped shape of 10 mm long and 5 mm wide, and a shearing force was applied to the bonded surface to generate the force necessary to cause peeling. It was measured as adhesive strength. As a result, the adhesive strength was as high as 670 kg/mm2.
【0022】(実施例2)
■接着剤フィルム(III)の作製
ガラス板上に接着剤ワニス(III)を溶媒蒸発後厚み
が20μmになるようにディスペンス、スピンコーター
により均一に塗布した後、熱風循環乾燥器中100℃で
60分加熱し溶媒を蒸発させた後樹脂フィルムをガラス
板上より剥離させることにより接着剤フィルム(III
)が得られた。(Example 2) ■ Preparation of adhesive film (III) Adhesive varnish (III) was uniformly applied onto a glass plate using a dispenser and spin coater so that the thickness became 20 μm after evaporation of the solvent, and then hot air was applied. The adhesive film (III
)was gotten.
【0023】■シリコン板の接着
シリコン板に接着剤フィルム(III)を張り付け、次
に配線接続部を覆うマスクを通して高圧水銀灯からの紫
外線を1000mJ/cm2照射し、NMPとメタノー
ルの混合溶媒中で2分30秒間浸漬し、未露光部の樹脂
を溶解除去した後、2−プロパノールでリンスした。こ
のようにして接着剤パターンの形成された基板を150
℃で60分、次いで250℃で60分で乾燥した後もう
一枚のシリコン基板を接着剤面にのせ、350℃、50
kg/cm25分間加熱圧着することにより2枚の基板
を接着した。■Adhesion of silicon plate Adhesive film (III) is pasted on the silicon plate, then 1000 mJ/cm2 of ultraviolet light from a high-pressure mercury lamp is irradiated through a mask covering the wiring connection part, and 2 After dipping for 30 seconds to dissolve and remove the resin in the unexposed areas, the resin was rinsed with 2-propanol. The substrate on which the adhesive pattern was formed in this way was
After drying at ℃ for 60 minutes and then at 250℃ for 60 minutes, another silicon substrate was placed on the adhesive surface and dried at 350℃ for 50 minutes.
The two substrates were bonded together by heat-pressing at kg/cm for 25 minutes.
【0024】■接着強度の測定
上述のように接着した二枚のシリコン板の接着強度を実
施例1と同様の方法により測定した。その結果、接着強
度は550g/mm2とやはり大きなものであった。(2) Measurement of Adhesive Strength The adhesive strength of the two silicon plates bonded together as described above was measured in the same manner as in Example 1. As a result, the adhesive strength was as high as 550 g/mm2.
【0025】(比較例1)上記実施例1のポリアミド酸
(I)の合成において二酸無水物を全て同モルのピロメ
リト酸二無水物に、ジアミンを全て同モルの4,4’−
ジアミノジフェニルエーテルにそれぞれ置き換えた他は
上記実施例1と同等の操作を行った。しかし、2枚のシ
リコン板の接着強度は40kg/mm2と非常に小さい
ものでしかなかった。(Comparative Example 1) In the synthesis of polyamic acid (I) in Example 1, all dianhydrides were replaced with the same mole of pyromellitic dianhydride, and all diamines were replaced with the same mole of 4,4'-
The same operation as in Example 1 above was carried out except that each substance was replaced with diaminodiphenyl ether. However, the adhesive strength between the two silicon plates was only 40 kg/mm2, which was very low.
【0026】(比較例2)上記実施例1において接着剤
ワニス(II)を調製しない代わりにポリアミド酸ワニ
ス(I)をそのまま接着剤ワニスとして用いた。このと
き、実施例1における露光工程の前にフォトレジストの
塗布、プリベークの二工程を新たに追加し、現像工程の
代わりにO2/CF4プラズマ照射(圧力0.2Tor
r、出力200w、時間20分)による樹脂除去および
フォトレジストの除去なる二工程をやはり追加すること
によって実施例1と同等の接着を行うことができた。(Comparative Example 2) In Example 1, the adhesive varnish (II) was not prepared, but instead the polyamic acid varnish (I) was used as it was as the adhesive varnish. At this time, two new steps of photoresist coating and pre-bake were added before the exposure step in Example 1, and instead of the development step, O2/CF4 plasma irradiation (pressure 0.2 Torr) was added.
By adding the two steps of removing the resin and removing the photoresist using the following method (200 W, output: 200 W, time: 20 minutes), the same adhesion as in Example 1 could be achieved.
【0027】[0027]
【発明の効果】本発明によれば、高い耐熱性、高い接着
性及び良好な加工性を合わせ持つ耐熱感光性ポリイミド
接着剤を得ることができる。According to the present invention, it is possible to obtain a heat-resistant, photosensitive polyimide adhesive having high heat resistance, high adhesiveness, and good processability.
Claims (2)
ルテトラカルボン酸二酸無水物(以下BPDAと略記)
、3,3’,4,4’−ベンゾフェノンテトラカルボン
酸二酸無水物(以下BTDAと略記)、p−フェニレン
ジアミン(以下PPDと略記)、1,3−ビス(3−ア
ミノフェノキシ)ベンゼン(以下APBと略記)を必須
成分とする二酸無水物及びジアミンの組合せから合成さ
れるポリアミド酸、(B)二量化あるいは重合が可能な
炭素−炭素二重結合を有するアミン、アンモニウム化合
物あるいは酸アミド化合物の二成分を必須成分とする耐
熱感光性ポリイミド接着剤。Claim 1: (A) 3,3',4,4'-biphenyltetracarboxylic dianhydride (hereinafter abbreviated as BPDA)
, 3,3',4,4'-benzophenonetetracarboxylic dianhydride (hereinafter abbreviated as BTDA), p-phenylenediamine (hereinafter abbreviated as PPD), 1,3-bis(3-aminophenoxy)benzene ( Polyamic acid synthesized from a combination of dianhydride and diamine (hereinafter abbreviated as APB) as an essential component; (B) amine, ammonium compound, or acid amide having a carbon-carbon double bond that can be dimerized or polymerized; A heat-resistant, photosensitive polyimide adhesive that contains two chemical compounds as essential components.
、BTDAの全二酸無水物中における含量がそれぞれ7
0〜80モル%、15〜25モル%、PPDとAPBの
全ジアミン中における含量がそれぞれ60〜90モル%
、10〜40%であり、全酸無水物と全ジアミンの比が
0.9〜1.1であることを特徴とする請求項1記載の
耐熱感光性ポリイミド接着剤。[Claim 2] BPDA in polyamic acid (A)
, the content of BTDA in the total diacid anhydride is 7, respectively.
0 to 80 mol%, 15 to 25 mol%, the content of PPD and APB in the total diamine is 60 to 90 mol%, respectively.
, 10 to 40%, and the ratio of total acid anhydride to total diamine is 0.9 to 1.1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20500891A JPH04337380A (en) | 1991-05-15 | 1991-05-15 | Heat-resistant photo-sensitive polyimide adhesive |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20500891A JPH04337380A (en) | 1991-05-15 | 1991-05-15 | Heat-resistant photo-sensitive polyimide adhesive |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04337380A true JPH04337380A (en) | 1992-11-25 |
Family
ID=16499926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20500891A Pending JPH04337380A (en) | 1991-05-15 | 1991-05-15 | Heat-resistant photo-sensitive polyimide adhesive |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04337380A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204565B1 (en) | 1998-06-10 | 2001-03-20 | Nec Corporation | Semiconductor carrier and method for manufacturing the same |
WO2007004569A1 (en) * | 2005-07-05 | 2007-01-11 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
WO2011049011A1 (en) | 2009-10-19 | 2011-04-28 | 東レ株式会社 | Photosensitive adhesive composition, photosensitive adhesive sheet, and semiconductor devices using same |
WO2012002134A1 (en) | 2010-07-02 | 2012-01-05 | 東レ株式会社 | Photosensitive resin composition, photosensitive resin composition film, and semiconductor device using the photosensitive resin composition or the photosensitive resin composition film |
-
1991
- 1991-05-15 JP JP20500891A patent/JPH04337380A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204565B1 (en) | 1998-06-10 | 2001-03-20 | Nec Corporation | Semiconductor carrier and method for manufacturing the same |
WO2007004569A1 (en) * | 2005-07-05 | 2007-01-11 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US7851131B2 (en) | 2005-07-05 | 2010-12-14 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US8278024B2 (en) | 2005-07-05 | 2012-10-02 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US8293453B2 (en) | 2005-07-05 | 2012-10-23 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US8323873B2 (en) | 2005-07-05 | 2012-12-04 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US8445177B2 (en) | 2005-07-05 | 2013-05-21 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
US8673539B2 (en) | 2005-07-05 | 2014-03-18 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
WO2011049011A1 (en) | 2009-10-19 | 2011-04-28 | 東レ株式会社 | Photosensitive adhesive composition, photosensitive adhesive sheet, and semiconductor devices using same |
WO2012002134A1 (en) | 2010-07-02 | 2012-01-05 | 東レ株式会社 | Photosensitive resin composition, photosensitive resin composition film, and semiconductor device using the photosensitive resin composition or the photosensitive resin composition film |
US8946852B2 (en) | 2010-07-02 | 2015-02-03 | Toray Industries, Inc. | Photosensitive resin composition, photosensitive resin composition film, and semiconductor device using the photosensitive resin composition or photosensitive resin composition film |
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