JPH04335913A - Heat treatment and chemical treatment device - Google Patents

Heat treatment and chemical treatment device

Info

Publication number
JPH04335913A
JPH04335913A JP10916091A JP10916091A JPH04335913A JP H04335913 A JPH04335913 A JP H04335913A JP 10916091 A JP10916091 A JP 10916091A JP 10916091 A JP10916091 A JP 10916091A JP H04335913 A JPH04335913 A JP H04335913A
Authority
JP
Japan
Prior art keywords
main body
chemical
chemical substances
gas
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10916091A
Other languages
Japanese (ja)
Inventor
Hikari Matsuzaki
松▲崎▼ 光
Saburo Osaki
大崎 三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Engineering Corp
Mitsubishi Electric Corp
Original Assignee
Renesas Semiconductor Engineering Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Engineering Corp, Mitsubishi Electric Corp filed Critical Renesas Semiconductor Engineering Corp
Priority to JP10916091A priority Critical patent/JPH04335913A/en
Publication of JPH04335913A publication Critical patent/JPH04335913A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To keep a pressure loss low and reduce a frequency of cleaning and replacing an air discharging pipe and the like by a method wherein non-reacted chemical substances in the discharged gas out of a main body of a reaction furnace are thermally decomposed and then removed. CONSTITUTION:Gas containing some chemical substances is fed into a main body 3 of a reaction furnace storing processed material and the processed material is applied with a predetermined thermal processing and a chemical processing under a process control system. A mechanism 10 for processing the non-reacted chemical substances is placed in the midway part of an air discharging pipe out of the main body of the reaction furnace. This processing mechanism is comprised of an outer combustion mechanism 14 for forcedly and thermally decomposing non-reacted gas containing some chemical substances after being processed at the main body of the reaction furnace and a dust collecting filter mechanism 12.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、熱処理および化学処理
後の気体中に含まれる未反応の化学物質を酸化反応する
ことで、該気体中の化学物質を反応しつくし、かつ反応
物質を排気ガス中から除去する熱処理機構を備えてなる
半導体製造装置等に用いられる熱処理および化学処理装
置に関する。
[Industrial Application Field] The present invention performs an oxidation reaction on unreacted chemical substances contained in the gas after heat treatment and chemical treatment, thereby completely reacting the chemical substances in the gas, and exhausting the reactants. The present invention relates to heat treatment and chemical treatment equipment used in semiconductor manufacturing equipment, etc., which is equipped with a heat treatment mechanism for removing gas from inside.

【0002】0002

【従来の技術】図3は従来の化学物質を含んだ気体を導
入することにより所定の熱処理および化学処理を施す半
導体製造装置等に用いられる熱処理および化学処理装置
を示す系統図であり、同図において1は被処理物に処理
を行なうための化学物質を含んだ気体、2はこの化学物
質で被処理物を処理する炉に導入し得るガス導入口、3
は被処理物を収容した反応炉本体、4はこの反応炉本体
3に装着されたガス排出口、6はガス排出口4に排気配
管5を介して接続された真空ポンプ、7は真空ポンプ6
に排気配管5を介して接続された排気ガス中の有害化学
物質を取り除く除害装置、8はこの除害装置7に接続さ
れた除害装置通過ガス排出口、9はこの除害装置通過ガ
ス排出口8から排出される処理後の排出ガス(気体)で
ある。このような装置において、所定の化学物質を含ん
だ気体1は、ガス導入口2から反応炉本体3に入り、所
定の熱処理および化学処理を施し、真空ポンプ6によっ
て排気される際に、未反応化学物質がガス排出口4周辺
より除害装置7に至るまでの配管5内に付着したり、真
空ポンプ6のオイル中に混入したりしながら、除害装置
7に送られる。また、この除害装置7を通過しながら処
理された排出ガス9は、除害装置通過ガス排出口8から
排気されている。
2. Description of the Related Art FIG. 3 is a system diagram showing a conventional heat treatment and chemical treatment equipment used in semiconductor manufacturing equipment, etc., which performs predetermined heat treatment and chemical treatment by introducing a gas containing a chemical substance. 1 is a gas containing a chemical substance for treating the object to be treated, 2 is a gas inlet that can be introduced into the furnace for treating the object with this chemical substance, and 3
Reference numeral 4 indicates a reactor main body containing the material to be treated, 4 a gas outlet installed in the reactor main body 3, 6 a vacuum pump connected to the gas outlet 4 via an exhaust pipe 5, and 7 a vacuum pump 6.
8 is an abatement device that removes harmful chemicals from the exhaust gas, which is connected to the abatement device 7 via an exhaust pipe 5; 8 is an abatement device-passing gas discharge port connected to the abatement device 7; 9 is a gas abatement device-passing gas outlet connected to the abatement device 7; This is exhaust gas (gas) discharged from the exhaust port 8 after processing. In such an apparatus, a gas 1 containing a predetermined chemical substance enters a reactor main body 3 through a gas inlet 2, undergoes predetermined heat treatment and chemical treatment, and is exhausted by a vacuum pump 6 to remove unreacted gas. The chemical substances are sent to the abatement device 7 while adhering to the inside of the piping 5 from around the gas outlet 4 to the abatement device 7 or mixed into the oil of the vacuum pump 6 . Furthermore, the exhaust gas 9 that has been treated while passing through the abatement device 7 is exhausted from the abatement device passing gas outlet 8 .

【0003】0003

【発明が解決しようとする課題】ところで、気相成長法
などで排出される高温の排気ガス9は、未反応の化学物
質を含んでいるため、排気配管5、該配管5途中に設け
られるバルブ等にこれらの化学物質が付着し、配管5を
目詰まりさせたり、バルブ動作を妨げたり、あるいは該
配管5途中に設けられている真空ポンプ6中のオイルを
汚染したりする。このため、このような高温気体を配管
5やバルブに導入する前に、予め気体中の未反応化学物
質を除去することが必要となっている。従来、この種の
化学物質を含んだ気体を用いる熱処理および化学処理装
置は、その装置の反応炉本体3から排出した未反応の化
学物質を自発的に除去したりその量を軽減したりする機
構を備えていないので、被析出器の上に析出したり、オ
イル中に混入した未反応物質により、装置の前後での圧
力損失が増えるという問題を生じている。このため、排
気配管5、バルブ等を取り外して洗浄したり、真空ポン
プ6のオイル交換等を行なったりすることが必要であり
、反応効率が低い化学物質を用いた場合にはこの洗浄、
交換の頻度が高くなるといった問題を避けられないもの
であった。本発明はこのような問題点を解消するために
なされたものであって、反応炉本体のガス排出口付近か
ら除害装置に至る排気配管、バルブ、真空ポンプ等の汚
染源である未反応化学物質を、化学的に除去したりその
量を軽減したりする機構を取り入れることで、高い除去
効率を得るとともに、本装置において圧力損失を低く保
ち、さらに構成部品の洗浄、交換等の頻度を低減できる
熱処理および化学処理装置を提供することを目的として
いる。
[Problems to be Solved by the Invention] By the way, the high-temperature exhaust gas 9 discharged by the vapor phase growth method, etc. contains unreacted chemical substances, so it is necessary to These chemical substances adhere to the pipes 5, clog the pipes 5, obstruct valve operation, or contaminate the oil in the vacuum pump 6 provided in the middle of the pipes 5. Therefore, before such high-temperature gas is introduced into the pipe 5 or the valve, it is necessary to remove unreacted chemical substances from the gas in advance. Conventionally, heat treatment and chemical processing equipment that uses gas containing chemical substances of this type has a mechanism that spontaneously removes or reduces the amount of unreacted chemical substances discharged from the reactor body 3 of the equipment. Since the system is not equipped with a system, there is a problem in that pressure loss before and after the system increases due to unreacted substances deposited on the precipitator or mixed into the oil. For this reason, it is necessary to remove and clean the exhaust pipe 5, valves, etc., and to change the oil of the vacuum pump 6. If a chemical substance with low reaction efficiency is used, this cleaning,
Problems such as increased frequency of replacement were unavoidable. The present invention has been made to solve these problems, and is aimed at eliminating unreacted chemical substances that are a source of contamination in the exhaust pipes, valves, vacuum pumps, etc. from the vicinity of the gas outlet of the reactor main body to the abatement device. By incorporating a mechanism to chemically remove or reduce the amount of , it is possible to obtain high removal efficiency, keep pressure loss low in this device, and further reduce the frequency of cleaning and replacement of component parts. Its purpose is to provide heat treatment and chemical treatment equipment.

【0004】0004

【課題を解決するための手段】本発明に係る熱処理およ
び科学処理装置では、TEOS等に代表される化学物質
を含んだ気体を導入し、熱処理および化学処理を施す反
応炉によって排出される未反応化学物質を完全に燃焼、
酸化させ、未反応化学物質を除去またはその量を軽減し
、反応炉本体のガス排出口付近から除害装置に至る排気
配管、バルブ、真空ポンプ等での圧力損失を低く保ち、
これらの部品の洗浄、交換等の頻度を低減し得るように
したものである。
[Means for Solving the Problems] In the heat treatment and chemical treatment apparatus according to the present invention, a gas containing a chemical substance such as TEOS is introduced, and unreacted gas discharged from the reactor for heat treatment and chemical treatment is introduced. Completely burns chemicals,
oxidize, remove or reduce the amount of unreacted chemical substances, and maintain low pressure loss in exhaust piping, valves, vacuum pumps, etc. from the vicinity of the gas outlet of the reactor main body to the abatement equipment.
This is designed to reduce the frequency of cleaning, replacing, etc. of these parts.

【0005】[0005]

【作用】本発明によれば、TEOS等に代表される化学
物質を含んだ気体は、反応炉本体により所定の処理を行
なうことで、未反応化学物質を含んだ気体として排出さ
れるが、この気体中に混在している未反応化学物質は、
外部燃焼機構および集塵機構を有する未反応化学物質処
理機構において外部燃焼機構によって、効率よく燃焼、
酸化され、粉末状の酸化物とされるとともに、この酸化
物は前記集塵機構によって集められて回収される。
[Operation] According to the present invention, a gas containing chemical substances such as TEOS is discharged as a gas containing unreacted chemical substances by performing prescribed processing in the reactor main body. Unreacted chemicals mixed in the gas are
The unreacted chemical substance processing mechanism has an external combustion mechanism and a dust collection mechanism.
It is oxidized into a powdered oxide, and this oxide is collected and recovered by the dust collecting mechanism.

【0006】[0006]

【実施例】図1および図2は本発明に係る半導体製造装
置等に用いられる熱処理および化学処理装置の一実施例
を示すものであり、これらの図において前述した図3と
同一または相当する部分には同一番号を付して説明は省
略する。さて、本発明によれば、反応炉本体3のガス排
出口4と真空ポンプ7の接続用排気配管5中に、外部燃
焼機構14および集塵用フィルタ機構15を備えた未反
応化学物質処理機構10を介在させて設けている。この
未反応化学物質処理機構10における外部燃焼機構14
および集塵用フィルタ機構15の構造は、図2に示した
ような構成とされている。これを詳細に説明すると、外
部燃焼機構14は、発熱体13により加熱される機構と
、酸素導入管12より流量制御された酸素を供給する機
構とを有し、反応炉本体3におけるガス排出口4付近に
接続されている。また、集塵用フィルタ機構15は、上
記外部燃焼機構14の下流側に接続して設けられている
。ここで、これらの外部燃焼機構14と集塵用フィルタ
機構15とは、ガス排出口4と真空ポンプ7における接
続用排気配管5に気密式継手フランジ11,11で連結
保持されており、これらは接続用配管5から取外し可能
になっている。また、外部燃焼機構14と集塵用フィル
タ機構15もフランジ11による連結構造を有し、全体
として気密性を保ち、しかも取外し可能な構造となって
いる。
[Embodiment] FIGS. 1 and 2 show an embodiment of a heat treatment and chemical processing apparatus used in semiconductor manufacturing equipment, etc. according to the present invention, and in these figures, parts that are the same as or corresponding to those in FIG. 3 described above are shown. are given the same numbers and their explanations will be omitted. Now, according to the present invention, an unreacted chemical substance processing mechanism includes an external combustion mechanism 14 and a dust collection filter mechanism 15 in the exhaust pipe 5 for connecting the gas outlet 4 of the reactor main body 3 and the vacuum pump 7. 10 are interposed therebetween. External combustion mechanism 14 in this unreacted chemical substance processing mechanism 10
The structure of the dust collecting filter mechanism 15 is as shown in FIG. To explain this in detail, the external combustion mechanism 14 has a mechanism that is heated by the heating element 13 and a mechanism that supplies oxygen at a controlled flow rate from the oxygen introduction pipe 12, and has a gas discharge port in the reactor main body 3. It is connected near 4. Further, the dust collection filter mechanism 15 is provided connected to the downstream side of the external combustion mechanism 14 . Here, the external combustion mechanism 14 and the dust collection filter mechanism 15 are connected and held to the gas outlet 4 and the connecting exhaust pipe 5 of the vacuum pump 7 by airtight joint flanges 11, 11. It can be removed from the connection piping 5. Further, the external combustion mechanism 14 and the dust collection filter mechanism 15 also have a connection structure using the flange 11, and have a structure that maintains airtightness as a whole and is removable.

【0007】そして、上述したような構成において、ガ
ス排出口4から排出される未反応化学物質を含む気体は
、外部燃焼機構14および集塵用フィルタ機構15を通
過して真空ポンプ7に導かれ、このとき未反応化学物質
が配管5内に付着するが、これは前記外部燃焼機構14
によって速やかに酸化反応が行われ、未反応化学物質は
粉末状となる。そして、この粉末状物質は、集塵用フィ
ルタ機構15を通過することにより、フィルタによって
除去されて下方に順次落下し、未反応化学物質処理機構
10の筐体内に集められて回収可能とされる。なお、集
塵用フィルタ機構15のフィルタは、上述した外部燃焼
機構14や処理機構10の筐体内から取外し可能になっ
ている。
[0007] In the above-described configuration, the gas containing unreacted chemical substances discharged from the gas outlet 4 passes through the external combustion mechanism 14 and the dust collection filter mechanism 15 and is led to the vacuum pump 7. At this time, unreacted chemical substances adhere to the inside of the pipe 5, but this is caused by the external combustion mechanism 14.
The oxidation reaction takes place quickly, and unreacted chemical substances become powdered. Then, by passing through the dust collection filter mechanism 15, this powdery substance is removed by the filter and sequentially falls downward, and is collected in the casing of the unreacted chemical substance processing mechanism 10 and can be recovered. . Note that the filter of the dust collection filter mechanism 15 can be removed from inside the housing of the external combustion mechanism 14 and the processing mechanism 10 described above.

【0008】なお、本発明は上述した実施例構造には限
定されず、装置各部の構造等を適宜変形、変更し得るこ
とは勿論であり、種々の変形例が考えられよう。たとえ
ば図2において外部燃焼機構14に流量設定された酸素
を導入するようにした場合を説明したが、酸素、水素の
両気体を2本の導入管で外部燃焼機構14に導入しても
、未反応化学物質を反応させ得ることは勿論である。 また、導入管12によりオゾンを導入しても、同様に未
反応化学物質を処理できることも言うまでもない。また
、発熱部において発熱体の代わりに、直火型ヒータを用
いてもよいことも明かであろう。
It should be noted that the present invention is not limited to the structure of the above-described embodiment, and it goes without saying that the structure of each part of the device can be modified or changed as appropriate, and various modifications may be considered. For example, in FIG. 2, a case has been described in which oxygen with a set flow rate is introduced into the external combustion mechanism 14, but even if both oxygen and hydrogen gases are introduced into the external combustion mechanism 14 through two introduction pipes, no Of course, reactive chemicals can be reacted. Furthermore, it goes without saying that even if ozone is introduced through the introduction pipe 12, unreacted chemical substances can be similarly treated. It is also clear that a direct-fired heater may be used in place of the heat generating element in the heat generating section.

【0009】[0009]

【発明の効果】以上説明したように本発明によれば、排
気配管、バルブおよび真空ポンプのオイルを汚染する未
反応の化学物質を、効率よく排気ガス中から除去する機
構を有しているため、除去効率の高い外部燃焼装置およ
び集塵用フィルタ機構を有する未反応化学物質処理機構
を持ちながら、その前後での圧力損失を低く保つことが
でき、外部燃焼機構以降の排気配管、バルブ、真空ポン
プ等の洗浄、交換の頻度を低減し得るという種々優れた
効果がある。
[Effects of the Invention] As explained above, the present invention has a mechanism for efficiently removing unreacted chemical substances that contaminate exhaust piping, valves, and vacuum pump oil from exhaust gas. Although it has an unreacted chemical substance processing mechanism with an external combustion device with high removal efficiency and a filter mechanism for dust collection, it is possible to maintain low pressure loss before and after the external combustion device, and the exhaust piping, valves, and vacuum after the external combustion device can be kept low. This has various excellent effects such as reducing the frequency of cleaning and replacing pumps and the like.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明に係る熱処理および化学処理装置の一実
施例を示す概略構成図である。
FIG. 1 is a schematic configuration diagram showing an embodiment of a heat treatment and chemical treatment apparatus according to the present invention.

【図2】図1における未反応化学物質処理機構の詳細を
示す構成図である。
FIG. 2 is a configuration diagram showing details of the unreacted chemical substance processing mechanism in FIG. 1;

【図3】従来の熱処理および化学処理装置の概略構成図
である。
FIG. 3 is a schematic configuration diagram of a conventional heat treatment and chemical treatment apparatus.

【符号の説明】[Explanation of symbols]

1    被処理物を処理するための化学物質を含んだ
気体2    ガス導入口 3    反応炉本体 4    ガス排出口 5    排気配管 6    真空ポンプ 7    除害装置 10    未反応化学物質処理装置 12    導入管 13    発熱体 14    外部燃焼機構 15    集塵用フィルタ機構
1 Gas containing chemical substances for treating the object to be treated 2 Gas inlet 3 Reactor main body 4 Gas outlet 5 Exhaust pipe 6 Vacuum pump 7 Harm removal device 10 Unreacted chemical substance processing device 12 Introductory pipe 13 Heating element 14 External combustion mechanism 15 Dust collection filter mechanism

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  被処理物が収容される反応炉本体と、
この反応炉本体内に化学物質を含んだ気体を導入するこ
とにより前記被処理物に所定の熱処理および化学処理を
施す処理制御系を備えた熱処理および化学処理装置にお
いて、前記反応炉本体での処理後の化学物質を含んだ未
反応の気体を強制的に熱分解するための外部燃焼機構を
設けたことを特徴とする熱処理および化学処理装置。
[Claim 1] A reactor main body in which a workpiece is housed;
In a heat treatment and chemical treatment apparatus equipped with a processing control system that performs predetermined heat treatment and chemical treatment on the object to be treated by introducing a gas containing a chemical substance into the reactor main body, the processing in the reactor main body is performed. A heat treatment and chemical treatment apparatus characterized by being provided with an external combustion mechanism for forcibly thermally decomposing unreacted gas containing chemical substances.
JP10916091A 1991-05-14 1991-05-14 Heat treatment and chemical treatment device Pending JPH04335913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10916091A JPH04335913A (en) 1991-05-14 1991-05-14 Heat treatment and chemical treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10916091A JPH04335913A (en) 1991-05-14 1991-05-14 Heat treatment and chemical treatment device

Publications (1)

Publication Number Publication Date
JPH04335913A true JPH04335913A (en) 1992-11-24

Family

ID=14503167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10916091A Pending JPH04335913A (en) 1991-05-14 1991-05-14 Heat treatment and chemical treatment device

Country Status (1)

Country Link
JP (1) JPH04335913A (en)

Similar Documents

Publication Publication Date Title
JP3280173B2 (en) Exhaust gas treatment equipment
JP5241982B2 (en) Method and apparatus for supplying gas phase reactants into a reaction chamber
EP1450936B1 (en) Method and apparatus for treating exhaust gas comprising a fluorine compound and carbon monoxide
EP0861683B1 (en) Process and apparatus for abating effluent gases
US8063262B2 (en) Hazardous gas abatement method
JP2013125810A (en) Film formation device and film formation method
JP3020948B1 (en) Adsorption type gas scrubber for treating gas generated during semiconductor manufacturing
JP3027303B2 (en) Method and apparatus for detoxifying exhaust gas discharged from a chemical vapor deposition apparatus using tetraethoxysilane as a source gas
JPH11168067A (en) Equipment for eliminating damage and damage elimination method of semiconductor manufacturing off-gas
JPH04335913A (en) Heat treatment and chemical treatment device
JP3215074B2 (en) Method and device for removing semiconductor manufacturing flue gas
JP3242875B2 (en) Exhaust gas abatement apparatus and exhaust gas abatement method
JP3272986B2 (en) Semiconductor manufacturing flue gas abatement system
JPH029408A (en) Dust trap
JP4491696B2 (en) Exhaust gas treatment equipment
JP2000153119A (en) Filter
JPH0635650B2 (en) Ultra high purity gas supply device
TWI669151B (en) Method and device for decompressing and harming exhaust gas
JPH0686661B2 (en) Vapor phase growth equipment
JPH11233444A (en) Exhaust duct equipment for semiconductor manufacturing device
KR200249752Y1 (en) Reaction chamber of waste-gas dust eliminating equipment.
KR20010045251A (en) System for disposol of waste gas
JPS63310618A (en) Fine particle collecting device for vacuum exhausting system
KR100284325B1 (en) Waste gas treatment system for atmospheric pressure equipment
KR200283870Y1 (en) Low pressure chemical vapour deposition device