KR200249752Y1 - Reaction chamber of waste-gas dust eliminating equipment. - Google Patents

Abstract

The present invention relates to a reaction chamber of a waste gas dust removing apparatus, and in the related art, there is a problem in that the waste gas purifying apparatus is damaged by dust because it cannot effectively remove dust from the apparatus for purifying waste gas.

Accordingly, the present invention, as shown in Figures 1 to 3, is to effectively remove dust and waste gas by rapidly supplying a large amount of silicon oxide by supplying oxygen to the toxic gas of the waste gas, the chamber 10, The heating chamber 16 is formed by forming the heating chamber 16 and the heating wire 24 is installed in the heating chamber 16 so that oxygen is heated by the heating wire 24 to flow into the chamber.

Therefore, by oxidizing SiH4 in the waste gas to rapidly generate silicon oxide (SiO2), it is possible to remove SiH4, which is a toxic gas in the waste gas, and to powder the silicon oxide (SiO2), which is a dust material, to make dust material in the waste gas. There is an effect that can be easily removed.

Description

Reaction chamber of waste-gas dust eliminating equipment

The present invention relates to a reaction chamber of a waste gas dust removal device, and in particular, waste gas dust removal for effectively removing dust and waste gas by rapidly supplying oxygen to the toxic gas of the waste gas to rapidly generate a large amount of silicon oxide. It relates to a reaction chamber of the device.

In the process in which waste gas is discharged during the production of the product, particularly in the semiconductor manufacturing process, for example, in a wafer processing process, various reaction gases are supplied and chemically reacted to the wafer in the chamber to perform an oxide film treatment on the upper surface of the wafer.

At this time, in the chamber, toxic gases, moisture, residual gases, and dusty silicon oxide in the form of dust are formed while being involved in the oxide film growth of the wafer.

Since such residual materials can seriously affect air pollution, the above-described waste gas purification process is essential in semiconductor manufacturing processes and the like.

In more detail, in the semiconductor manufacturing process, first, a wafer obtained by uniformly polishing a surface of a silicon rod, which is a silicon crystal, is introduced into a chamber, and a chamber is used to coat an epitaxial layer or an oxide film on a thin wafer of single crystal. Reaction gas is supplied into the chamber.

At this time, the gas reacted to the growth of the epitaxial layer is introduced into the chamber by the operation of the vacuum pump, and as the atoms are arranged in the form of new single crystals on the upper surface of the wafer, the new epitaxial layer expands or grows in the process. It will be located in the correct location.

On the other hand, when the oxide film is partially grown on the surface of the epitaxial layer, an oxide film is formed using oxygen gas, steam, or a mixed gas of oxygen and hydrogen.A silicon oxide layer is formed as the silicon is oxidized to form an impurity diffusion process. It protects the surface of the wafer and is used for the next process, photo etching.

In this way, a plurality of reaction gases are introduced into the chamber, which reacts to grow an epitaxial layer. At this time, the remaining waste gas after the reaction in the chamber is sucked out by the vacuum pump and discharged into the atmosphere.

However, various reaction gases are toxic to the atmosphere because they react with the growth of the epitaxial layer of the wafer in the chamber and produce toxic gases such as SiH4, moisture, dust silicon oxide and residual gases. A waste gas purifier was installed on the line from the vacuum pump to the atmosphere.

There is a dry method and a wet method used in the purification device, the dry method is a method of zeolite and burning (Burning), the wet method is a method of neutralizing the toxic gas by spraying water and washing liquid.

As described above, if the generation of waste gas is indispensable as in the semiconductor manufacturing process or the like, a purification treatment process for the treatment thereof is essential.

However, such a purification device has a problem that the efficiency is reduced by the dust contained in the waste gas.

That is, in the dry type purifier, silicon oxide discharged in a large amount was purified and sedimented or precipitated in the purifier. In the wet type, water and sludge reacted with water because the water was used as a washing liquid. Due to the blockage of the duct, there was a problem that the purification discharge line is blocked.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a reaction chamber of the waste gas dust removal device for removing the dust in the waste gas before the waste gas is sent to the purifier.

The present invention is to effectively remove dust and waste gas by rapidly supplying oxygen to the toxic gas of the waste gas to rapidly generate a large amount of silicon oxide. The chamber is provided with a double to form a heating chamber, By installing a heating wire, the oxygen is heated by the heating wire to flow into the chamber.

Therefore, the present invention reacts waste gas with oxygen to oxidize SiH 4 of waste gas to rapidly generate SiO 2, so that SiH 4, which is a toxic gas in the waste gas, can be removed and silicon oxide (SiO 2), which is a dust material, can be coagulated and removed. It is effective.

1 is an explanatory view showing a reaction chamber according to the present invention,

2 (a) is a cutaway perspective view showing a reaction chamber according to the present invention,

(B) is a cross-sectional explanatory diagram showing a reaction chamber according to the present invention,

3 is an explanatory view showing another embodiment of a heating chamber according to the present invention.

-Explanation of symbols for the main parts of the drawings-

10-chamber, 12-outer wall,

14-inner wall, 16-heating chamber,

18-oxygen supply, 20-inlet,

21-outlet, 22-valve,

24-heating wire, 26-heat pipe,

28-passageway, 30-passageway,

32-outlet, 34-collector,

36-pipe.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

The present invention provides a double chamber 10 of the outer wall 12 and the inner wall 14 so that the space formed by the outer wall 12 and the inner wall 14 becomes the heating chamber 16 and the heating chamber 16 In addition to the heating wire 24 is installed on the outer wall 12 of the heating chamber 16, the oxygen supply unit 18 is installed and the inner wall 14 of the heating chamber 16 is connected to the inside of the chamber 10, The inlet 20 of the waste gas is formed in the upper portion of the chamber 10, and the outlet 21 of the waste gas is formed in the lower portion of the chamber 10, while the waste gas is conveyed at high pressure to the outlet 21 side. It is a reaction chamber of the waste gas dust removing apparatus in which the valve 22 is formed.

Here, the heating chamber 16 is the heating wire 24 is inserted into the heat dissipation tube 26, the inner wall 14 is opened so that the upper end of the inner wall 14 is connected to the chamber 10 and the heating chamber 16 is connected to the inner wall 14 And a passage pipe 28 is installed between the outer wall 12.

In addition, the heating chamber 16 has a spiral passage 30 extending from the lower portion to the upper portion thereof, and the heating wire 24 is installed along the passage 30 so that the oxygen at the inlet 20 of the passage 30 is formed. The supply unit 18 is installed and a plurality of outlets 32 of the passage 30 is formed, characterized in that the outlet 32 is connected to the interior of the chamber (10).

Exemplary drawings, Figure 1 is an explanatory view showing a reaction chamber of the dust removal apparatus according to the present invention, Figures 2 and 3 are explanatory views showing a heating chamber, the present invention is a waste gas SiH4 by reacting the waste gas and oxygen By oxidizing and rapidly generating SiO 2, SiH 4, which is a toxic gas in the waste gas, was removed and at the same time, silicon oxide (SiO 2), which is a dust material, was coagulated and removed.

That is, since SiH4 + 2O2-> SiO2 + 2H2O, the toxic gas SiH4 in the waste gas becomes silicon oxide, and the silicon oxide produced here is agglomerated with the silicon oxide contained when the waste gas flows in, so that the collection is simplified. will be.

The reaction is carried out at a high temperature, the present invention for this purpose, the chamber 10 is provided so that the reaction can occur, the inlet 20 for introducing waste gas is formed on the upper part, the dust generated at the bottom An outlet 21 for discharging the gas is formed.

The chamber 10 is provided with a double of the outer wall 12 and the inner wall 14 to heat and supply oxygen, and a heating wire 24 in the heating chamber 16 which is a space formed by the outer wall 12 and the inner wall 14. The outer wall 12 is provided with an oxygen supply unit 18 so that oxygen introduced from the oxygen supply unit 18 is heated in the heating chamber 16 to flow into the chamber 10.

Therefore, the outer wall 12 of the heating chamber 16 is preferably heat-insulated, and the inner wall 14 of the heating chamber 16 is preferably set to a material having sufficient thermal conductivity because the reaction is a high temperature reaction.

On the other hand, in order to sufficiently heat the oxygen in the heating chamber 16, the heating wire 24 is installed in a heat dissipation tube surrounding the inner wall 14 to heat the oxygen introduced from the lower portion of the heating chamber 16. An upper end of the inner wall 14 is opened at an upper portion of the inner wall 14, and a passage tube 28 is provided to close the outer wall 12 so as to connect the inside of the heating chamber 16 and the chamber 10.

Therefore, the oxygen introduced into the heating chamber 16 downward is sufficiently heated by the heat dissipation tube, and then flows into the chamber 10 along the passage 30 between the passage tube 28 and the inner wall 14 to discharge waste gas. Will respond.

In another embodiment of the heating chamber 16, a passage 30 is formed spirally along the chamber 10, and the heating wire 24 is provided along the passage 30. As shown in FIG.

The inlet 20 of the passage 30 is formed in the lower portion of the heating chamber 16, which is connected to the oxygen supply unit 18, and oxygen introduced into the lower portion of the heating chamber 16 passes through the passage 30. As it moves along, it is sufficiently heated to be discharged from the outlet 32 of the upper portion of the heating chamber 16 to react quickly with the waste gas introduced into the inlet 20 of the chamber 10.

According to the present invention, the waste gas in the process rapidly generates silicon oxide dust while passing through the chamber 10, and agglomerates the dust into powder, that is, powder silicon silicon, which is easy to collect, to collect 34. It can be removed through a separate process using such as.

On the other hand, in order to easily move the waste gas and powder that passed through the chamber 10 in the discharge line, a gas valve 22 is provided at the outlet 21 side of the chamber 10.

The valve 22 is a gas induction device of a waste gas purifier, which has been filed by the applicant (20-1998-0025973), and is provided with a strong suction force and a discharge force by injecting high-pressure nitrogen gas, thereby The powder is sucked quickly and strongly discharged together with nitrogen gas to prevent the silicon oxide powder from sticking to the curved pipe 36 discharge line.

The valve 22 is preferably installed at each bent portion of the pipeline to prevent dust from sticking to the bent portion of the pipe 36.

On the other hand, even when the valve 22 is mounted, dust may be stuck to the bent portion of the pipeline during the operation stop of the apparatus. Therefore, in order to remove such dust, the pipe 36 may be detachably installed. .

Reference numeral 38 is a temperature sensor for detecting the heating temperature of oxygen, 40 is to detect this because the silicon oxide dust is stuck in the pipeline when the transport pressure of the waste gas discharged to the pressure sensor increases.

Reference numeral 42 is a gasket, and 44 is a flange.

Hereinafter, the operation of the present invention will be described.

The waste gas of the semiconductor process flows into the chamber 10 and oxygen is supplied to the chamber 10. At this time, the oxygen is heated and supplied by the heating wire 24 installed in the heating chamber 16. React with the waste gas.

In the chamber 10, the SiH 4 gas of the waste gas is rapidly transformed into silicon oxide dust and is quickly discharged by the pressure-feeding valve 22 and passed through the bent pipe 36 to a separate collecting part 34.

Collector 34 is to separate the powder and waste gas through a filter or a separate method.

As described above, the present invention provides a separate chamber, in which the oxygen is heated and supplied to the waste gas to react with the heated oxygen.

Therefore, by reacting the waste gas with oxygen to oxidize the SiH4 of the waste gas to rapidly generate SiO2, the effect of removing the toxic gas SiH4 in the waste gas and at the same time to remove the silicon oxide (SiO2) of the dust material. It is.

Claims (3)

The double chamber 10 of the outer wall 12 and the inner wall 14 is provided so that the space formed by the outer wall 12 and the inner wall 14 becomes the heating chamber 16, and a heating wire in the heating chamber 16. In addition to the 24, the oxygen supply unit 18 is installed on the outer wall 12 of the heating chamber 16, and the inner wall 14 of the heating chamber 16 is connected to the inside of the chamber 10. The inlet 20 of the waste gas is formed in the upper portion of the 10, and the outlet 21 of the waste gas is formed in the lower portion of the chamber 10, while the valve 22 for supplying the waste gas at high pressure to the outlet 21 side. Reaction chamber of the waste gas dust removal device is formed. According to claim 1, wherein the heating chamber 16 is the heating wire 24 is inserted into the heat dissipation tube, the inner wall 14 is opened so that the upper end of the inner wall 14 is connected to the chamber 10 and the heating chamber 16 is connected to the inner wall (14). Reaction chamber of the waste gas dust removal device, characterized in that the passage pipe 28 is installed between the outer wall and (12). The heating chamber (16) according to claim 1, wherein the heating chamber (16) is formed with a spiral passage (30) extending from the bottom to the upper portion, and the heating wire (24) is installed along the passage (30) to the inlet (20) of the passage (30). Reaction chamber of the waste gas dust removal device, characterized in that the oxygen supply unit 18 is installed in the plurality and the outlet 32 of the passage 30 is formed so that the outlet 32 is connected to the interior of the chamber 10 .