JPH04332181A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPH04332181A JPH04332181A JP3101592A JP10159291A JPH04332181A JP H04332181 A JPH04332181 A JP H04332181A JP 3101592 A JP3101592 A JP 3101592A JP 10159291 A JP10159291 A JP 10159291A JP H04332181 A JPH04332181 A JP H04332181A
- Authority
- JP
- Japan
- Prior art keywords
- film
- corrosion
- magnetoresistive element
- ferromagnetic
- ferromagnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 55
- 230000007797 corrosion Effects 0.000 claims abstract description 51
- 238000005260 corrosion Methods 0.000 claims abstract description 51
- 230000001681 protective effect Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 3
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 claims description 10
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000009966 trimming Methods 0.000 abstract description 36
- 239000010408 film Substances 0.000 description 138
- 238000000034 method Methods 0.000 description 14
- 239000010931 gold Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910000889 permalloy Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は磁気抵抗素子に係り、特
にトリミング部を有した磁気抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element, and more particularly to a magnetoresistive element having a trimming portion.
【０００２】一般に磁気抵抗素子は、その信頼性向上の
ために強磁性体膜よりなるパターン表面に保護膜を形成
しており、高湿雰囲気であってもパターンが腐食しない
よう保護している。Generally, in order to improve the reliability of a magnetoresistive element, a protective film is formed on the surface of a pattern made of a ferromagnetic film to protect the pattern from corrosion even in a high humidity atmosphere.
【０００３】また、磁気抵抗素子は、その用途（例えば
ブリッジ回路等）によって高精度なものが要求されてお
り、そのような場合には抵抗値或いは中点電位や不平衡
電圧を調整して特性の揃ったものとしている。[0003] Also, magnetoresistive elements are required to have high precision depending on their use (for example, bridge circuits, etc.), and in such cases, the characteristics can be adjusted by adjusting the resistance value, midpoint potential, or unbalanced voltage. It is assumed that the following is complete.
【０００４】通常、これらの調整には素子上でのトリミ
ングが採用されており、磁気抵抗素子パターン近傍に形
成されたトリミングパターンをレーザトリミングするこ
とにより上記調整を行っている。[0004] Normally, trimming on the element is employed for these adjustments, and the above adjustments are performed by laser trimming a trimming pattern formed near the magnetoresistive element pattern.
【０００５】[0005]
【従来の技術】図２に従来構成の磁気抵抗素子１の全体
平面を示す。この磁気抵抗素子１はバーバーポールタイ
プの磁気抵抗素子であり上部近傍位置には横一列に参照
符号２で示す複数のトリミング部が形成されている。図
３は複数あるトリミング部２の一つを拡大して示す図で
ある。同図において、３は磁気抵抗素子部（梨地で示す
のはバーバーポールを形成するための導体）であり、こ
の磁気抵抗素子部３の右端部近傍位置には電極部４，５
が形成されている。トリミング部２は、この一対の電極
部４，５を連通するよう形成されている。図３における
Ａ−Ａ断面を図４に示す。2. Description of the Related Art FIG. 2 shows an overall plan view of a magnetoresistive element 1 having a conventional structure. This magnetoresistive element 1 is a barber pole type magnetoresistive element, and a plurality of trimming portions indicated by reference numerals 2 are formed in a horizontal line near the top. FIG. 3 is an enlarged view of one of the plurality of trimming sections 2. As shown in FIG. In the figure, reference numeral 3 denotes a magnetoresistive element part (the conductor for forming the barber pole shown in matte finish), and electrode parts 4 and 5 are located near the right end of the magnetoresistive element part 3.
is formed. The trimming portion 2 is formed so as to communicate the pair of electrode portions 4 and 5. FIG. 4 shows a cross section taken along line A-A in FIG. 3.
【０００６】同図において、６はシリコン（Ｓｉ）基板
であり、その上部には酸化シリコン（ＳｉＯ２）膜７が
形成されており、更にその上部には例えばパーマロイ等
の強磁性膜８が形成されている。また、強磁性膜８の上
部にはバーバーポール状のタンタルモリブデン（ＴａＭ
ｏ）膜９と金（Ａｕ）膜１０が順次成膜されている。タ
ンタルモリブデン膜９は強磁性膜８と金膜１０との接合
性を向上させるために形成される膜であるため、タンタ
ルモリブデン膜９は金膜１０のパターンと同一のパター
ンとなるよう形成されている。更に上記各膜が形成され
たシリコン基板６上には保護膜１１として窒化シリコン
（ＳｉＮ）が形成されている。In the figure, 6 is a silicon (Si) substrate, on which a silicon oxide (SiO2) film 7 is formed, and on top of that a ferromagnetic film 8, such as permalloy, is formed. ing. Further, on the upper part of the ferromagnetic film 8, barber pole-shaped tantalum molybdenum (TaM) is provided.
o) Film 9 and gold (Au) film 10 are sequentially formed. Since the tantalum molybdenum film 9 is a film formed to improve the bonding property between the ferromagnetic film 8 and the gold film 10, the tantalum molybdenum film 9 is formed to have the same pattern as the gold film 10. There is. Furthermore, silicon nitride (SiN) is formed as a protective film 11 on the silicon substrate 6 on which the above films are formed.
【０００７】同図ではトリミング部２に既にトリミング
処理が行われた後の状態を示している。トリミング処理
は強磁性膜８に対して行われる処理であるが、前記した
ように強磁性膜８の上部には保護膜１１が形成されてい
るため、トリミング処理においては強磁性膜８と共に保
護膜１１も除去されてしまう。[0007] This figure shows the state after the trimming section 2 has already been subjected to trimming processing. The trimming process is a process performed on the ferromagnetic film 8. As mentioned above, since the protective film 11 is formed on the top of the ferromagnetic film 8, the protective film 11 is removed together with the ferromagnetic film 8 in the trimming process. 11 is also removed.
【０００８】[0008]
【発明が解決しようとする課題】上記のように、トリミ
ング処理においては強磁性膜８と共に保護膜１１も除去
されてしまうため、トリミング位置において強磁性膜８
は露出した状態となる（露出部分を図中矢印Ｂで示す）
。よって、この状態の磁気抵抗素子１が高温度雰囲気等
にさらされると、この露出した部分より強磁性膜８に腐
食が発生し、磁気抵抗素子１の特性が経時的に劣化する
という問題点があった。[Problems to be Solved by the Invention] As mentioned above, in the trimming process, the protective film 11 is removed together with the ferromagnetic film 8.
is exposed (the exposed part is indicated by arrow B in the figure)
. Therefore, when the magnetoresistive element 1 in this state is exposed to a high-temperature atmosphere, corrosion occurs in the ferromagnetic film 8 from this exposed portion, and the characteristics of the magnetoresistive element 1 deteriorate over time. there were.
【０００９】また、従来構成の磁気抵抗素子１では、ト
リミング部２は強磁性膜８の上部に直接保護膜１１が形
成された構成とされていた。しかるに、強磁性膜８と保
護膜１１の接合性はあまり良くなく、上記のように強磁
性膜８に腐食が発生すると、腐食は接合力の弱い強磁性
膜８と保護膜１１の界面を伝って拡大していく。そして
、最悪の場合には腐食はトリミング部２より電極部４，
５や磁気抵抗素子部３にまで拡大してゆき、パターンオ
ープナとなり抵抗値が無限大となり磁気抵抗素子として
機能しなくなるおそれがあるという問題点があった。Further, in the conventional magnetoresistive element 1, the trimming portion 2 has a structure in which the protective film 11 is directly formed on the ferromagnetic film 8. However, the bonding properties between the ferromagnetic film 8 and the protective film 11 are not very good, and when corrosion occurs in the ferromagnetic film 8 as described above, the corrosion propagates through the interface between the ferromagnetic film 8 and the protective film 11, which has weak bonding strength. and expand. In the worst case, corrosion will occur from the trimming part 2 to the electrode part 4,
5 and the magnetoresistive element portion 3, it becomes a pattern opener and the resistance value becomes infinite, causing the problem that there is a risk that it will no longer function as a magnetoresistive element.
【００１０】一方、上記の問題点を解決する手段として
、トリミング部におけるトリミング処理が行われる金属
を、パーマロイに代えてクロム（Ｃｒ）等のトリミング
のみを目的とした金属膜とすることが考えられる。しか
るに、この構造はパーマロイに比べて耐食性には優れる
ものの、クロムの蒸着，トリミングパターンの形成を磁
気抵抗素子部３と別個の工程で行わなければならないた
め、磁気抵抗素子の製造工程が複雑になるという問題点
がある。On the other hand, as a means to solve the above-mentioned problems, it is conceivable to use a metal film such as chromium (Cr) for the sole purpose of trimming, instead of permalloy, as the metal on which the trimming process is performed in the trimming part. . However, although this structure has superior corrosion resistance compared to permalloy, it complicates the manufacturing process of the magnetoresistive element because chromium vapor deposition and trimming pattern formation must be performed in a separate process from the magnetoresistive element part 3. There is a problem.
【００１１】本発明は上記の点に鑑みてなされたもので
あり、強磁性膜と保護膜の界面における腐食の拡大を防
止しうる磁気抵抗素子を提供することを目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide a magnetoresistive element capable of preventing the spread of corrosion at the interface between a ferromagnetic film and a protective film.
【００１２】0012
【課題を解決するための手段】上記課題を解決するため
に、本発明では、強磁性膜の上に保護膜を形成すると共
に、抵抗値を調整するためのトリミング部を設けてなる
磁気抵抗素子において、少なくともトリミング部近傍に
おける強磁性膜と保護膜との間に、強磁性膜と保護膜と
の双方に対して接合性の良好な材質よりなる耐腐食性膜
を形成したことを特徴とするものである。[Means for Solving the Problems] In order to solve the above problems, the present invention provides a magnetoresistive element in which a protective film is formed on a ferromagnetic film and a trimming portion is provided for adjusting the resistance value. A corrosion-resistant film made of a material having good bonding properties to both the ferromagnetic film and the protective film is formed between the ferromagnetic film and the protective film at least in the vicinity of the trimming part. It is something.
【００１３】また、上記強磁性膜をニッケル鉄とし、保
護膜を窒化膜とし、かつ耐腐食性膜をタンタル−モリブ
デン合金としたことを特徴とするものである。The present invention is also characterized in that the ferromagnetic film is made of nickel iron, the protective film is made of a nitride film, and the corrosion-resistant film is made of a tantalum-molybdenum alloy.
【００１４】更に、上記耐腐食性膜を１０〜１００Åの
厚さで形成したことを特徴とするものである。Further, the present invention is characterized in that the above-mentioned corrosion-resistant film is formed to have a thickness of 10 to 100 Å.
【００１５】[0015]
【作用】上記構成とされた磁気抵抗素子では、強磁性膜
と保護膜との間には耐腐食性膜が介装された構造となり
、かつ耐腐食性膜は強磁性膜及び保護膜の双方に対して
接合性が良好であるため、耐腐食性膜と強磁性膜及び耐
腐食性膜と保護膜の密着性は共に向上する。よって、ト
リミング部において保護膜がトリミング処理により除去
され強磁性膜が露出された構造となっても、腐食は耐腐
食性膜と強磁性膜との間に拡大することはなく、磁気抵
抗素子の特性劣化を防止及び信頼性の向上を図ることが
できる。[Operation] In the magnetoresistive element having the above structure, a corrosion-resistant film is interposed between the ferromagnetic film and the protective film, and the corrosion-resistant film is interposed between the ferromagnetic film and the protective film. Since the adhesion between the corrosion-resistant film and the ferromagnetic film and between the corrosion-resistant film and the protective film are both improved. Therefore, even if the protective film is removed in the trimming process and the ferromagnetic film is exposed, corrosion will not spread between the corrosion-resistant film and the ferromagnetic film, and the magnetoresistive element will be damaged. It is possible to prevent characteristic deterioration and improve reliability.
【００１６】[0016]
【実施例】次に本発明の実施例について図面と共に説明
する。図１は本発明の位置実施例である磁気抵抗素子２
０におけるトリミング部２１近傍の断面図である。尚、
磁気抵抗素子２０は、このトリミング部２１の構造を除
き図２，図３を用いて説明した従来の磁気抵抗素子１と
同一構成であるため、本実施例ではトリミング部２１の
断面のみ図示して説明を行うこととする。また、図２，
図３を用いて説明した従来の磁気抵抗素子１と同一構成
部分については同一符号を付すものとする。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a magnetoresistive element 2 which is a positional embodiment of the present invention.
FIG. 2 is a cross-sectional view of the vicinity of the trimming portion 21 at 0; still,
Since the magnetoresistive element 20 has the same configuration as the conventional magnetoresistive element 1 described using FIGS. 2 and 3 except for the structure of the trimming part 21, only the cross section of the trimming part 21 is shown in this example. Let me explain. Also, Figure 2,
Components that are the same as those of the conventional magnetoresistive element 1 described using FIG. 3 are given the same reference numerals.
【００１７】本実施例に係る磁気抵抗素子２０は、強磁
性膜８と保護膜１１の間に耐腐食性膜２２としてタンタ
ル−モリブデン合金膜を配設したことを特徴とするもの
である。まず、磁気抵抗素子２０の製造方法について説
明する。The magnetoresistive element 20 according to this embodiment is characterized in that a tantalum-molybdenum alloy film is provided as a corrosion-resistant film 22 between the ferromagnetic film 8 and the protective film 11. First, a method for manufacturing the magnetoresistive element 20 will be described.
【００１８】シリコン基板６には先ず酸化処理が行われ
、シリコン基板６の上面には酸化シリコン膜７が形成さ
れる。続いて、酸化シリコン膜７の上部には強磁性膜８
として、Ｎｉの含有量が８２±２％とされたＮｉＦｅパ
ーマロイが４００〜１２００Åの膜厚で蒸着される。
更に、強磁性膜８の上部には、密着性向上膜（耐腐食性
膜）２２として膜厚２００〜８００Åのタンタル−モリ
ブデン、及び導体幕１０として膜厚２０００〜８０００
Åの金（Ａｕ）またはアルミニウム（Ａｌ）が蒸着され
る。しかる後に、導体幕１０をパターニングし、次に導
体膜パターンと同一パターンに密着性向上膜２２をエッ
チングする。このエッチングの際、密着性向上膜２２は
１０〜１００Åの薄い膜厚が残るように行い、強磁性膜
８の表面が露出しないようにする。The silicon substrate 6 is first subjected to an oxidation treatment, and a silicon oxide film 7 is formed on the upper surface of the silicon substrate 6. Subsequently, a ferromagnetic film 8 is formed on the silicon oxide film 7.
As a result, NiFe permalloy with a Ni content of 82±2% is deposited to a thickness of 400 to 1200 Å. Further, on the top of the ferromagnetic film 8, a tantalum-molybdenum film with a thickness of 200 to 800 Å is formed as an adhesion improving film (corrosion resistant film) 22, and a film of tantalum-molybdenum with a thickness of 2000 to 8000 Å is formed as a conductor curtain 10.
Gold (Au) or aluminum (Al) of Å is deposited. Thereafter, the conductor curtain 10 is patterned, and then the adhesion improving film 22 is etched in the same pattern as the conductor film pattern. During this etching, the adhesion improving film 22 is etched so that a thin film thickness of 10 to 100 Å remains, so that the surface of the ferromagnetic film 8 is not exposed.
【００１９】ここで、密着性向上膜（耐腐食性膜）２２
の膜厚を薄くするのは、密着性向上膜２２が強磁性膜８
の検出処理（一般に磁気抵抗素子２０は加速センサ，角
度センサ等として用いられる）に極力悪影響を及ぼさな
いようにするのと、後述する腐食防止機能は、薄い密着
性向上膜２２でも十分に機能するからである。その後、
強磁性膜８が所定の形状にパターニングされることによ
り、磁気抵抗素子部３上にはバーバーポール状に導体膜
（金膜）１０が形成され、また電極４，５となる位置に
は電極が形成される。Here, the adhesion improving film (corrosion resistant film) 22
The reason why the film thickness is reduced is that the adhesion improving film 22 is a ferromagnetic film 8.
(The magnetoresistive element 20 is generally used as an acceleration sensor, an angle sensor, etc.) in the detection process (generally, the magnetoresistive element 20 is used as an acceleration sensor, an angle sensor, etc.). It is from. after that,
By patterning the ferromagnetic film 8 into a predetermined shape, a barber pole-shaped conductive film (gold film) 10 is formed on the magnetoresistive element section 3, and electrodes are formed at the positions that will become the electrodes 4 and 5. It is formed.
【００２０】上記のようにシリコン基板６上に各膜が形
成されると、続いて各膜が形成されたシリコン基板６の
上部全体を覆うよう保護膜１１として窒化シリコンが所
定の膜厚で形成される。従って、トリミング処理が実施
されるトリミング部２１では、シリコン基板６（正確に
は酸化シリコン膜７）上に、強磁性膜７，本発明の特徴
となる耐腐食性膜２２，保護膜１１が順次積層された構
造となっている。After each film is formed on the silicon substrate 6 as described above, silicon nitride is then formed to a predetermined thickness as a protective film 11 so as to cover the entire upper part of the silicon substrate 6 on which each film is formed. be done. Therefore, in the trimming section 21 where the trimming process is performed, the ferromagnetic film 7, the corrosion-resistant film 22, which is a feature of the present invention, and the protective film 11 are sequentially formed on the silicon substrate 6 (more precisely, the silicon oxide film 7). It has a layered structure.
【００２１】耐腐食性膜２２を構成するタンタル−モリ
ブデンは強磁性膜７を構成するパーマロイとの接合は良
好であり、かつタンタル−モリブデンは保護膜１１を構
成する窒化シリコンとの接合性も良好である。従って、
強磁性膜７と耐腐食性膜２２に密着性、及び耐腐食性膜
２２と保護膜１１との密着性は向上する。The tantalum-molybdenum forming the corrosion-resistant film 22 has good bonding properties with the permalloy forming the ferromagnetic film 7, and the tantalum-molybdenum bonding property with the silicon nitride forming the protective film 11 is also good. It is. Therefore,
The adhesion between the ferromagnetic film 7 and the corrosion-resistant film 22 and the adhesion between the corrosion-resistant film 22 and the protective film 11 are improved.
【００２２】図１は既にトリミング部２１にトリミング
処理が実施された状態を示しており、トリミング処理に
より保護膜１１は除去され、強磁性膜７のトリミングさ
れた部位は露出した状態となっている。しかるに、本実
施例に係る磁気抵抗素子２０は強磁性膜７と保護膜１１
が直接接合されてはおらず、強磁性膜７は耐腐食性膜２
２と接合している。従って、強磁性膜７に腐食が発生し
たとしても、強磁性膜７と耐腐食性膜２２との密着性は
強いため、腐食が強磁性膜７と耐腐食性膜２２との界面
に拡大するようなことはない。よって、強磁性膜７の腐
食はトリミング処理が実施された部位のみで止まり、そ
れ以上拡大するようなことはない。この程度の腐食は磁
気抵抗素子２０の特性に影響を大きく及ぼすものではな
いため、耐腐食性膜２２を形成することにより、磁気抵
抗素子２０の経時的な特性劣化を防止でき信頼性を向上
することができる。FIG. 1 shows a state in which the trimming process has already been performed on the trimming portion 21, and the protective film 11 has been removed by the trimming process, leaving the trimmed portion of the ferromagnetic film 7 exposed. . However, the magnetoresistive element 20 according to this embodiment has the ferromagnetic film 7 and the protective film 11.
are not directly bonded, and the ferromagnetic film 7 is the corrosion-resistant film 2.
It is joined with 2. Therefore, even if corrosion occurs in the ferromagnetic film 7, the corrosion will spread to the interface between the ferromagnetic film 7 and the corrosion-resistant film 22 because the adhesion between the ferromagnetic film 7 and the corrosion-resistant film 22 is strong. There is no such thing. Therefore, the corrosion of the ferromagnetic film 7 stops only in the area where the trimming process has been performed, and does not spread further. Since this degree of corrosion does not significantly affect the characteristics of the magnetoresistive element 20, by forming the corrosion-resistant film 22, the deterioration of the characteristics of the magnetoresistive element 20 over time can be prevented and reliability can be improved. be able to.
【００２３】本発明者は上記効果を確かめるため、従来
構成の磁気抵抗素子１と、本願発明の磁気抵抗素子２０
を用意し、夫々に対してＹＡＧ（Ｙｔｔｒｉｕｍ−Ａｌ
ｕｍｉｎｕｍ−Ｇａｒｎｅｔ）レーザによりレーザトレ
ミングを行い、その後、１２１℃，２気圧，２４時間で
ＰＣＴ（Ｐｒｅｓｓｕｒｅ Ｃｏｏｋｅｒ Ｔｅｓｔ：
高圧，高温，高湿の中で行う品質試験）を実施した。
その結果、従来構成の磁気抵抗素子１では磁気抵抗素子
部３まで腐食が進行したものが全体の７％あったのに対
して、本願発明の磁気抵抗素子２０では磁気抵抗素子部
３まで腐食が進行したものは全く発生しなかった。[0023] In order to confirm the above effects, the present inventors used a magnetoresistive element 1 having a conventional structure and a magnetoresistive element 20 of the present invention.
YAG (Yttrium-Al
PCT (Pressure Cooker Test:
Quality tests conducted under high pressure, high temperature, and high humidity were conducted. As a result, in 7% of the magnetoresistive elements 1 with the conventional structure, corrosion progressed to the magnetoresistive element part 3, whereas in the magnetoresistive element 20 of the present invention, corrosion occurred up to the magnetoresistive element part 3. None of the progressions occurred.
【００２４】また、上記のように本発明は強磁性膜８と
保護膜１１の間に耐腐食性膜２２を設けたことを特徴と
すが、この際、耐腐食性膜２２の材質として従来も強磁
性膜８と金膜１０の間に配設されていたタンタルモリブ
デン（ＴａＭｏ）を用いることにより、耐腐食性膜２２
の形成に際し、従来の製造工程に新たな工程を設けるこ
となく耐腐食性膜２２を形成することができた。よって
、製造工程を大きく変更することなく、上記のように多
大な効果を奏する耐腐食性膜２２を形成することができ
る。Furthermore, as described above, the present invention is characterized in that the corrosion-resistant film 22 is provided between the ferromagnetic film 8 and the protective film 11. Also, by using tantalum molybdenum (TaMo) disposed between the ferromagnetic film 8 and the gold film 10, the corrosion-resistant film 22
In forming the corrosion-resistant film 22, the corrosion-resistant film 22 could be formed without adding any new steps to the conventional manufacturing process. Therefore, it is possible to form the corrosion-resistant film 22 that exhibits the great effects as described above without significantly changing the manufacturing process.
【００２５】[0025]
【発明の効果】上述の如く本発明によれば、強磁性膜と
保護膜との間には耐腐食性膜が介装された構造となり、
かつ耐腐食性膜は強磁性膜及び保護膜の双方に対して接
合性が良好であるため、耐腐食性膜と強磁性膜及び耐腐
食性膜と保護膜の密着性は共に向上し、よってトリミン
グ部において保護膜がトリミング処理により除去され強
磁性膜が露出された構造となっても、腐食は耐腐食性膜
と強磁性膜との間に拡大することはなく、磁気抵抗素子
の特性劣化を防止及び信頼性の向上を図ることができる
等の特徴を有する。As described above, according to the present invention, a structure in which a corrosion-resistant film is interposed between a ferromagnetic film and a protective film is obtained.
In addition, since the corrosion-resistant film has good adhesion to both the ferromagnetic film and the protective film, the adhesion between the corrosion-resistant film and the ferromagnetic film and the corrosion-resistant film and the protective film both improve. Even if the protective film is removed by the trimming process and the ferromagnetic film is exposed in the trimmed part, corrosion will not spread between the corrosion-resistant film and the ferromagnetic film, and the characteristics of the magnetoresistive element will deteriorate. It has features such as being able to prevent problems and improve reliability.
【図１】本発明の一実施例である磁気抵抗素子のトリミ
ング部における断面を示す図である。FIG. 1 is a diagram showing a cross section of a trimmed portion of a magnetoresistive element according to an embodiment of the present invention.
【図２】従来における磁気抵抗素子の平面図である。FIG. 2 is a plan view of a conventional magnetoresistive element.
【図３】トリミング部近傍を拡大して示す図である。FIG. 3 is an enlarged view showing the vicinity of the trimming portion.
【図４】図３におけるＡ−Ａ線に沿う断面図である。FIG. 4 is a cross-sectional view taken along line AA in FIG. 3;
３ 磁気抵抗素子部 ４，５ 電極部 ６ シリコン基板 ７ 酸化シリコン膜 ８ 強磁性膜 １０ 金膜 １１ 保護膜 ２０ 磁気抵抗素子 ２１ トリミング部 ２２ 耐腐食性膜 3 Magnetoresistive element part 4, 5 Electrode part 6 Silicon substrate 7 Silicon oxide film 8 Ferromagnetic film 10 Gold film 11 Protective film 20 Magnetoresistive element 21 Trimming section 22 Corrosion-resistant film
Claims (3)
を形成すると共に、抵抗値を調整するためのトリミング
部（２１）を設けてなる磁気抵抗素子において、少なく
とも該トリミング部（２１）近傍における該強磁性膜（
８）と該保護膜（１１）との間に、該強磁性膜（８）と
該保護膜（１１）との双方に対して接合性の良好な材質
よりなる耐腐食性膜（２２）を形成したことを特徴とす
る磁気抵抗素子。[Claim 1] A protective film (11) on the ferromagnetic film (8).
In the magnetoresistive element, the ferromagnetic film (
8) and the protective film (11), a corrosion-resistant film (22) made of a material that has good bonding properties to both the ferromagnetic film (8) and the protective film (11) is provided. A magnetoresistive element characterized in that:
、かつ該保護膜（１１）は窒化膜であり、かつ該耐腐食
性膜（２２）はタンタル−モリブデン合金であることを
特徴とする請求項１の磁気抵抗素子。2. The ferromagnetic film (8) is nickel iron, the protective film (11) is a nitride film, and the corrosion-resistant film (22) is a tantalum-molybdenum alloy. The magnetoresistive element according to claim 1.
Åの厚さで形成されていることを特徴とする請求項１又
は２の磁気抵抗素子。3. The corrosion-resistant film (22) has a corrosion resistance of 10 to 100
3. The magnetoresistive element according to claim 1, wherein the magnetoresistive element is formed to have a thickness of .ANG.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3101592A JPH04332181A (en) | 1991-05-07 | 1991-05-07 | Magnetoresistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3101592A JPH04332181A (en) | 1991-05-07 | 1991-05-07 | Magnetoresistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04332181A true JPH04332181A (en) | 1992-11-19 |
Family
ID=14304657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3101592A Withdrawn JPH04332181A (en) | 1991-05-07 | 1991-05-07 | Magnetoresistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04332181A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7394086B2 (en) | 2003-07-18 | 2008-07-01 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
-
1991
- 1991-05-07 JP JP3101592A patent/JPH04332181A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7394086B2 (en) | 2003-07-18 | 2008-07-01 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
| US7633132B2 (en) | 2003-07-18 | 2009-12-15 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
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