JPH04330910A - Ceramic gas filter for manufacturing semiconductor - Google Patents
Ceramic gas filter for manufacturing semiconductorInfo
- Publication number
- JPH04330910A JPH04330910A JP12871991A JP12871991A JPH04330910A JP H04330910 A JPH04330910 A JP H04330910A JP 12871991 A JP12871991 A JP 12871991A JP 12871991 A JP12871991 A JP 12871991A JP H04330910 A JPH04330910 A JP H04330910A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas filter
- ceramic
- ceramic gas
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000011148 porous material Substances 0.000 claims abstract description 24
- 239000000843 powder Substances 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000001914 filtration Methods 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 13
- 238000011109 contamination Methods 0.000 abstract description 5
- 239000000565 sealant Substances 0.000 abstract description 5
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Filtering Materials (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、半導体製造関連の分野
で、ガス中に含まれる微細なダストの除去に用いられる
管状のセラミックガスフィルターに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tubular ceramic gas filter used in the field of semiconductor manufacturing to remove fine dust contained in gas.
【0002】0002
【従来の技術】管状のセラミックガスフィルターは、図
4に示すように、細粒からなる濾過層11と粗粒からな
る支持層12のいずれかの層を内側として積層した管状
に形成されており、その端面には、両層が露出した状態
となっている。2. Description of the Related Art A tubular ceramic gas filter is formed into a tubular shape in which either a filtration layer 11 made of fine particles and a support layer 12 made of coarse particles are stacked on the inside, as shown in FIG. , both layers are exposed on the end face.
【0003】このセラミックガスフィルターをモジュー
ル化し、支持層12側から濾過層11側へ被濾過ガスを
流して濾過する場合、被濾過ガスは、図4において矢印
で示すように、濾過層11を通ることなく支持層12を
通って端面から二次側(濾過された側)へ流れ、二次側
の濾過ガスを汚染する可能性がある。なぜならば、通気
量は、細孔径の2乗に比例して多くなるからである。When this ceramic gas filter is made into a module and the gas to be filtered is filtered by flowing from the support layer 12 side to the filtration layer 11 side, the gas to be filtered passes through the filtration layer 11 as shown by the arrow in FIG. There is a possibility that the gas flows from the end face to the secondary side (filtered side) through the support layer 12 and contaminates the filtered gas on the secondary side. This is because the amount of ventilation increases in proportion to the square of the pore diameter.
【0004】従来、かかる問題に対処するため、両端部
にガラスを含浸させた封止部を備える管状のセラミック
ガスフィルターが知られている。このセラミックガスフ
ィルターは、端部にガラス粉末を塗布し、加熱して含浸
させることによって製造されている。[0004] Conventionally, in order to cope with this problem, a tubular ceramic gas filter is known which has sealing portions impregnated with glass at both ends. This ceramic gas filter is manufactured by applying glass powder to the end and impregnating it by heating.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の管状のセラミックガスフィルターを半導体製造用ガ
スの濾過に使用する場合、ベーキング(脱ガス)した時
、又は使用中にガラスの成分であるアルカリ金属、アル
カリ土類金属等の蒸気圧の高い物質が蒸発し、二次側に
流れて濾過ガスを汚染し、これが半導体製品に対しての
汚染源となる可能性がある。[Problems to be Solved by the Invention] However, when the above-mentioned conventional tubular ceramic gas filter is used for filtering gas for semiconductor manufacturing, alkali metals, which are components of the glass, are removed during baking (degassing) or during use. Substances with high vapor pressure, such as alkaline earth metals, evaporate and flow to the secondary side, contaminating the filtered gas, which may become a source of contamination for semiconductor products.
【0006】そこで、本発明は、被濾過ガスの流入及び
封止剤の蒸発による二次側の汚染を防止可能な半導体製
造用セラミックガスフィルターの提供を目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a ceramic gas filter for semiconductor manufacturing that can prevent contamination of the secondary side due to the inflow of gas to be filtered and the evaporation of the sealant.
【0007】[0007]
【課題を解決するための手段】前記課題を解決するため
、本発明の半導体製造用モラミックガスフィルターは、
濾過層と支持層を積層した管状の半導体製造用セラミッ
クガスフィルターにおいて、両端部の細孔内に高純度の
セラミックス粉末粒子を付着させ、その部分の細孔径を
濾過層の細孔径と同等若しくはそれより小さくした封止
層を備えたものである。[Means for Solving the Problems] In order to solve the above problems, a moramic gas filter for semiconductor manufacturing of the present invention has the following features:
In a tubular ceramic gas filter for semiconductor manufacturing in which a filtration layer and a support layer are laminated, high-purity ceramic powder particles are attached to the pores at both ends, and the pore diameter of that part is equal to or smaller than the pore diameter of the filtration layer. It is equipped with a smaller sealing layer.
【0008】[0008]
【作用】上記手段においては、高純度のセラミックス粉
末粒子によって、封止層の通気量が濾過層の通気量と同
等若しくはそれより少なくなる。[Function] In the above means, the amount of ventilation in the sealing layer is equal to or smaller than the amount of ventilation in the filtration layer due to the high purity ceramic powder particles.
【0009】セラミックス粉末粒子としては、アルミナ
、ムライト、ジルコニア、チタニア等の酸化物系セラミ
ックス、又は炭化けい素、窒化けい素等の非酸化物系セ
ラミックス等があげられるが、母材と同じものを用いる
のが好ましく、かつアルカリ金属、アルカリ土類金属、
重金属等を含まないことが好ましい。Examples of ceramic powder particles include oxide ceramics such as alumina, mullite, zirconia, and titania, and non-oxide ceramics such as silicon carbide and silicon nitride. It is preferable to use an alkali metal, an alkaline earth metal,
Preferably, it does not contain heavy metals or the like.
【0010】0010
【実施例】以下、図面を参照して本発明の実施例を説明
する。図1は本発明の半導体製造用セラミックガスフィ
ルターの一実施例を示す半断面側面図である。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a half-sectional side view showing an embodiment of a ceramic gas filter for semiconductor manufacturing according to the present invention.
【0011】このセラミックガスフィルター1は、高純
度(99.99%)のアルミナ質セラミックスの細粒か
らなる濾過層2と、同様のセラミックスの粗粒からなる
支持層3を、濾過層2を内側にして積層した管状に形成
されており、その両端部には、支持層3の細孔内に両層
と同様のアルミナ質セラミックスの粉末粒子を付着させ
、細孔径を濾過層2の細孔径と同等の0.13μmとし
た封止層4が設けられている。This ceramic gas filter 1 has a filtration layer 2 made of fine particles of high purity (99.99%) alumina ceramics, and a support layer 3 made of coarse particles of the same ceramic, with the filtration layer 2 on the inside. Powder particles of alumina ceramics similar to those of both layers are attached to the pores of the support layer 3 at both ends thereof, and the pore diameter is adjusted to the pore diameter of the filtration layer 2. A sealing layer 4 having an equivalent thickness of 0.13 μm is provided.
【0012】次に、上記セラミックガスフィルター1の
製造方法について説明する。まず、粒度0.2μm、純
度99.99%のアルミナ粉末40重量部、水60重量
部をボールミル中で24時間解砕混合して高濃度のスラ
リーを得、この高濃度スラリー25重量部を水75重量
部に投入し、マグネティックスターラで攪拌して10重
量%のスラリーを得た。Next, a method for manufacturing the ceramic gas filter 1 will be explained. First, 40 parts by weight of alumina powder with a particle size of 0.2 μm and a purity of 99.99% and 60 parts by weight of water were crushed and mixed in a ball mill for 24 hours to obtain a highly concentrated slurry, and 25 parts by weight of this highly concentrated slurry was mixed with water. 75 parts by weight and stirred with a magnetic stirrer to obtain a 10% by weight slurry.
【0013】ついで、細孔径0.13μmの濾過層上に
細孔径2〜3μmの支持層を形成したアルミナ質セラミ
ックスからなる管状のフィルター素体の端部を、上記ス
ラリーに浸し、端部細孔部に毛細管現象でスラリーが染
み込んだら引き上げて乾燥した後、1200℃の温度で
焼成し、両端部に封止層を備えた管状のセラミックガス
フィルターを得た。Next, the end of a tubular filter body made of alumina ceramics, in which a support layer with a pore diameter of 2 to 3 μm is formed on a filtration layer with a pore diameter of 0.13 μm, is immersed in the slurry, and the end pores are removed. When the slurry seeped into the part by capillary action, it was pulled up and dried, and then fired at a temperature of 1200°C to obtain a tubular ceramic gas filter with sealing layers at both ends.
【0014】得られたセラミックガスフィルターの封止
層の細孔径を水銀圧入ポロシメーターで測定したところ
、図2に示すようになった。この測定結果から、封止層
の細孔径は、濾過層の細孔径と同様の0.13μmであ
ることがわかる。The pore diameter of the sealing layer of the obtained ceramic gas filter was measured using a mercury intrusion porosimeter, and the results were as shown in FIG. This measurement result shows that the pore diameter of the sealing layer is 0.13 μm, which is the same as the pore diameter of the filtration layer.
【0015】スラリーの調整は、水を溶媒として用いる
場合に限らず、メトローズ溶液やPVA溶液を溶媒とし
て用いてもよく、その粘性を調整することによってフィ
ルター素体に染み込ませる長さを制御できる。[0015] The preparation of the slurry is not limited to the case where water is used as a solvent, but a Metrose solution or a PVA solution may also be used as a solvent, and by adjusting its viscosity, the length of penetration into the filter body can be controlled.
【0016】スラリー濃度は、1〜35重量%が好まし
く、1重量%未満であると細孔への充填率が低くなって
効率が悪くなる一方、35重量%を超えるとフィルター
素体表面で目詰まりを起こし、細孔内に入り込まなくな
る。封止層の形成は、スラリーに浸す長さによって制御
できる。[0016] The slurry concentration is preferably 1 to 35% by weight; if it is less than 1% by weight, the filling rate into the pores will be low and the efficiency will be poor, while if it exceeds 35% by weight, it will be difficult to see the surface of the filter body. It becomes clogged and cannot enter the pores. Formation of the sealing layer can be controlled by the length of immersion in the slurry.
【0017】乾燥後の焼成は、材質によって異なるが、
濾過層を形成する際の焼成温度又はそれ以下の焼成温度
で行うのが好ましい。[0017] The firing process after drying varies depending on the material.
It is preferable to carry out the firing at a firing temperature equal to or lower than that used for forming the filter layer.
【0018】又、封止層は、支持層の端部の細孔径を濾
過層のそれと同等にして形成する場合に限らず、支持層
及び濾過層の端部の細孔径を濾過層の細孔径より小さく
して形成してもよい。Furthermore, the sealing layer is not limited to the case where the pore diameter at the end of the support layer is the same as that of the filtration layer; It may be formed smaller.
【0019】上述したセラミックガスフィルター1は、
図3に示すように、モジュール化されてサイズユニット
になる。このサイズユニットは、ステンレス鋼等により
円筒状に形成され、一端部(図3においては右端部)に
ガスの入口5、他端部(図3においては左端部)にガス
の出口6を有するハウジング7内に、一端部をふっ素樹
脂からなる脚付円板8により気密に封止されたセラミッ
クガスフィルター1を、その他端部にステンレス鋼から
なる円輪板9を当接した状態で収容して構成されている
。The above-mentioned ceramic gas filter 1 has the following features:
As shown in FIG. 3, it is modularized into size units. This size unit is a cylindrical housing made of stainless steel or the like, and has a gas inlet 5 at one end (the right end in FIG. 3) and a gas outlet 6 at the other end (the left end in FIG. 3). A ceramic gas filter 1 whose one end is hermetically sealed by a footed disc 8 made of fluororesin is housed in the chamber 7 with a circular plate 9 made of stainless steel in contact with the other end. It is configured.
【0020】上記サイズユニットにおいて、その入口5
から流入した被濾過ガスは、図示矢印のように、セラミ
ックガスフィルター1の支持層3から濾過層2を通りダ
ストを分離された濾過ガスは、二次側へ流れて出口6か
ら排出される。[0020] In the above-mentioned size unit, the inlet 5
The gas to be filtered flows from the support layer 3 of the ceramic gas filter 1 through the filtration layer 2 and the dust is separated from the support layer 3 of the ceramic gas filter 1, as shown by the arrow in the figure, and the filtered gas flows to the secondary side and is discharged from the outlet 6.
【0021】[0021]
【発明の効果】以上説明したように本発明によれば、高
純度のセラミック粉末粒子によって封止層の通気量が濾
過層の通気量と同等若しくはそれより少なくなるので、
被濾過ガスが支持層から直接二次側へ流入することがな
いと共に、従来のようにベーキング時、又は使用中に封
止剤が蒸発するようなことはなく、被濾過ガス及び封止
剤による二次側の汚染を防止でき、ひいてはセラミック
ガスフィルターからの半導体製品に対する汚染をなくす
ことができる。[Effects of the Invention] As explained above, according to the present invention, the air flow rate of the sealing layer is equal to or lower than the air flow rate of the filtration layer due to the high purity ceramic powder particles.
The gas to be filtered does not flow directly from the support layer to the secondary side, and the sealant does not evaporate during baking or during use, unlike conventional methods, and the gas to be filtered and the sealant do not evaporate. Contamination on the secondary side can be prevented, and contamination of semiconductor products from the ceramic gas filter can be eliminated.
【図1】本発明の半導体製造用セラミックガスフィルタ
ーの一実施例を示す半断面側面出である。FIG. 1 is a side view of a half cross section showing an embodiment of a ceramic gas filter for semiconductor manufacturing according to the present invention.
【図2】上記セラミックガスフィルターの封止層の細孔
径の測定結果を示す説明図である。FIG. 2 is an explanatory diagram showing the measurement results of the pore diameter of the sealing layer of the ceramic gas filter.
【図3】上記セラミックガスフィルターを用いたサイズ
ユニットの側断面図である。FIG. 3 is a side sectional view of a size unit using the ceramic gas filter.
【図4】通常のセラミックガスフィルターの側断面図で
ある。FIG. 4 is a side sectional view of a conventional ceramic gas filter.
1 セラミックガスフィルター 2 濾過層 3 支持層 4 封止層 1 Ceramic gas filter 2 Filtration layer 3 Support layer 4 Sealing layer
Claims (1)
体製造用セラミックガスフィルターにおいて、両端部の
細孔内に高純度のセラミックス粉末粒子を付着させ、そ
の部分の細孔径を濾過層の細孔径と同等若しくはそれよ
り小さくした封止層を備えることを特徴とする半導体製
造用セラミックガスフィルター。Claim 1: In a tubular ceramic gas filter for semiconductor manufacturing in which a filtration layer and a support layer are laminated, high-purity ceramic powder particles are attached to the pores at both ends, and the pore diameter of the part is adjusted to the pore size of the filtration layer. A ceramic gas filter for semiconductor manufacturing, characterized by comprising a sealing layer with a pore size equal to or smaller than the pore diameter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12871991A JP3213759B2 (en) | 1991-05-01 | 1991-05-01 | Size unit for semiconductor manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12871991A JP3213759B2 (en) | 1991-05-01 | 1991-05-01 | Size unit for semiconductor manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04330910A true JPH04330910A (en) | 1992-11-18 |
JP3213759B2 JP3213759B2 (en) | 2001-10-02 |
Family
ID=14991739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12871991A Expired - Fee Related JP3213759B2 (en) | 1991-05-01 | 1991-05-01 | Size unit for semiconductor manufacturing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3213759B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6210458B1 (en) * | 1997-12-26 | 2001-04-03 | Toshiba Ceramics Co., Ltd. | Gas filter module having two-part filter and method of producing the same |
-
1991
- 1991-05-01 JP JP12871991A patent/JP3213759B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6210458B1 (en) * | 1997-12-26 | 2001-04-03 | Toshiba Ceramics Co., Ltd. | Gas filter module having two-part filter and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
JP3213759B2 (en) | 2001-10-02 |
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