JPH04328296A - Manufacture of thin film light emitting element - Google Patents
Manufacture of thin film light emitting elementInfo
- Publication number
- JPH04328296A JPH04328296A JP3125420A JP12542091A JPH04328296A JP H04328296 A JPH04328296 A JP H04328296A JP 3125420 A JP3125420 A JP 3125420A JP 12542091 A JP12542091 A JP 12542091A JP H04328296 A JPH04328296 A JP H04328296A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous carbon
- hydrogenated amorphous
- light emitting
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000005977 Ethylene Substances 0.000 claims abstract description 7
- 239000012495 reaction gas Substances 0.000 claims abstract description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 abstract description 24
- -1 hydride carbon Chemical compound 0.000 abstract description 4
- 239000004698 Polyethylene Substances 0.000 abstract description 3
- 229920000573 polyethylene Polymers 0.000 abstract description 3
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、大面積ディスプレイ等
に用いることができる薄膜発光素子の製造方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film light emitting device that can be used for large area displays and the like.
【０００２】0002
【従来の技術】水素化非晶質半導体薄膜は、大面積化が
容易なこと、発光効率が高いこと等の特徴を有し、この
水素化非晶質半導体薄膜を用いた薄膜エレクトロルミネ
ッセンス（ＥＬ）素子が、大面積で且つ赤から青までの
光を目的に応じて出すＥＬ素子として研究されている。[Prior Art] Hydrogenated amorphous semiconductor thin films have the characteristics of being easy to increase in area and having high luminous efficiency.Thin film electroluminescence (EL) using this hydrogenated amorphous semiconductor thin film ) device is being researched as an EL device that has a large area and emits light from red to blue depending on the purpose.
【０００３】0003
【発明が解決しようとする課題】しかしながら、従来の
非晶質半導体薄膜ＥＬ素子では、青色発光の素子が得ら
れないという問題があった。青色発光の素子が得られな
い主な理由は次の通りである。即ち、従来は、発光層と
して、通常、バンドギャップが２．５〜３．３ｅＶの水
素化非晶質シリコンカーボン薄膜が用いられてきたが、
この水素化非晶質シリコンカーボン薄膜のバンドギャッ
プが青色発光を示すには狭く、このため、薄膜ＥＬ素子
を形成した際に青色発光が得られなかった。[Problems to be Solved by the Invention] However, conventional amorphous semiconductor thin film EL devices have a problem in that blue light emitting devices cannot be obtained. The main reasons why blue-emitting devices cannot be obtained are as follows. That is, conventionally, a hydrogenated amorphous silicon carbon thin film with a band gap of 2.5 to 3.3 eV has been used as a light emitting layer.
The bandgap of this hydrogenated amorphous silicon carbon thin film was too narrow to emit blue light, and therefore blue light could not be emitted when a thin film EL element was formed.
【０００４】このような事情から、広いバンドギャップ
を有し且つ高発光効率を示す材料の研究が行われ、その
結果、高周波プラズマ化学堆積法（ＰＣＶＤ法）を用い
、希釈されたエチレンガスを分解することによって、バ
ンドギャップが３．６ｅＶ以上で高発光効率を示す水素
化非晶質カーボン薄膜が開発された。そして、この水素
化非晶質カーボン薄膜を非晶質シリコン系薄膜ＥＬ素子
の発光層に用いて、青色発光する非晶質半導体薄膜ＥＬ
素子が実現された。しかしながら、それでも、その青色
純度はかなり悪かった（Ｙｏｓｈｉｈｉｒｏ Ｈａｍａ
ｋａｗａ ｅｔ ａｌ． ”Ｊｏｕｒｎａｌ ｏｆ Ｎ
ｏｎ−Ｃｒｙｓｔａｌｌｉｎｅ Ｓｏｌｉｄｓ” Ｖｏ
ｌ．１１５， １９８９， ｐ．１８０−１８２）。[0004] Under these circumstances, research has been conducted on materials that have a wide bandgap and exhibit high luminous efficiency, and as a result, diluted ethylene gas has been decomposed using radio frequency plasma chemical deposition (PCVD). As a result, a hydrogenated amorphous carbon thin film with a band gap of 3.6 eV or more and high luminous efficiency was developed. This hydrogenated amorphous carbon thin film is then used as a light-emitting layer of an amorphous silicon-based thin film EL device to create an amorphous semiconductor thin film EL device that emits blue light.
The device was realized. However, its blue purity was still quite poor (Yoshihiro Hama
Kawa et al. ”Journal of N
on-Crystalline Solids” Vo
l. 115, 1989, p. 180-182).
【０００５】そこで、本発明は、水素化非晶質カーボン
薄膜ＥＬ素子の青色純度の向上を目的としたものである
。[0005] Therefore, the present invention aims to improve the blue purity of a hydrogenated amorphous carbon thin film EL device.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明では、少なくとも一方が透明又は透光性であ
る２つの電極層を備え、これらの２つの電極層間に、バ
ンドギャップが３．５ｅＶ以上の絶縁性薄膜、水素化非
晶質カーボン薄膜及びバンドギャップが３．５ｅＶ以上
の絶縁性薄膜を順に設けた薄膜発光素子の製造方法にお
いて、前記非晶質カーボン薄膜を、高周波プラズマ化学
堆積法により、原料ガスとして実質的にエチレンガスの
みを用い、基板温度１００℃以下、反応ガス圧０．５Ｔ
ｏｒｒ以上の条件で製造する。[Means for Solving the Problems] In order to solve the above problems, the present invention includes two electrode layers, at least one of which is transparent or translucent, and has a band gap of 3 between these two electrode layers. In a method for manufacturing a thin film light emitting device, in which an insulating thin film with a band gap of .5 eV or more, a hydrogenated amorphous carbon thin film, and an insulating thin film with a band gap of 3.5 eV or more are sequentially provided, the amorphous carbon thin film is subjected to high frequency plasma chemistry. By the deposition method, substantially only ethylene gas is used as the raw material gas, the substrate temperature is 100°C or less, and the reaction gas pressure is 0.5T.
Manufactured under conditions of orr or higher.
【０００７】ここで、透明又は透光性の電極層は、薄膜
発光素子内で発生した光を外部に取り出すためのもので
あり、例えばＳｎＯ２ 膜、ＩＴＯ膜、半透明金属膜等
が用いられる。[0007] Here, the transparent or translucent electrode layer is for extracting the light generated within the thin film light emitting device to the outside, and for example, a SnO2 film, an ITO film, a semi-transparent metal film, etc. are used.
【０００８】また、バンドギャップが３．５ｅＶ以上の
絶縁性薄膜としては、酸化イットリウム、水素化非晶質
シリコン窒化薄膜等が用いられる。Further, as the insulating thin film having a band gap of 3.5 eV or more, yttrium oxide, hydrogenated amorphous silicon nitride thin film, etc. are used.
【０００９】[0009]
【作用】従来の水素化非晶質カーボン薄膜を発光層とす
る非晶質半導体薄膜ＥＬ素子において、純度の良い青色
発光が得られなかった理由は、本発明者らの実験に基づ
くと、次の通りであると考えられる。[Operation] Based on experiments conducted by the present inventors, the reason why blue light emission with good purity could not be obtained in the conventional amorphous semiconductor thin film EL device using a hydrogenated amorphous carbon thin film as the light emitting layer is as follows. This is considered to be the case.
【００１０】前述した論文に示されているように、水素
化非晶質カーボン薄膜ＥＬ素子の発光スペクトルには、
特徴的な３つのピークが現れる。まず第一に、波長６７
０ｎｍ付近に現れる赤色発光、第二に、５２０ｎｍ付近
に現れる緑色発光、最後に、４５０ｎｍ付近に現れる青
色発光である。従来の水素化非晶質カーボン薄膜ＥＬ素
子では、５２０ｎｍ付近の緑色発光のピークが一番強度
が大きく、４５０ｎｍ付近の青色発光のピークと６７０
ｎｍ付近の赤色発光のピークはその半分以下である。こ
の青色発光のピークの強度が小さいことが、青色純度の
悪い原因であった。そこで、青色純度を高めるためには
、この４５０ｎｍ付近の青色発光成分の強度を高めるこ
とが必要である。本発明者らは、この青色発光成分の源
となる膜中の結合構造を検討し、更に、その結合構造を
薄膜中に多量に作り付ける方法を見出した。As shown in the above-mentioned paper, the emission spectrum of a hydrogenated amorphous carbon thin film EL device has the following characteristics:
Three characteristic peaks appear. First of all, wavelength 67
The second is the red emission that appears around 0 nm, the second is the green emission that appears around 520 nm, and the last is the blue emission that appears around 450 nm. In conventional hydrogenated amorphous carbon thin film EL devices, the green emission peak near 520 nm has the highest intensity, and the blue emission peak near 450 nm and the 670 nm peak have the highest intensity.
The peak of red light emission near nm is less than half of that. The low intensity of this blue emission peak was the cause of poor blue purity. Therefore, in order to increase the blue purity, it is necessary to increase the intensity of this blue light emitting component around 450 nm. The present inventors investigated the bonding structure in the film that is the source of this blue light-emitting component, and further discovered a method for creating a large amount of the bonding structure in the thin film.
【００１１】本発明者らは、まず、ポリエチレンの電界
発光において、水素化非晶質カーボン薄膜と類似した４
５０ｎｍ付近の青色発光が得られていることに着目し（
宮入圭一他、「電子情報通信学会論文誌 Ｃ−ＩＩ」
Ｖｏｌ．Ｊ７３−Ｃ−ＩＩ、Ｎｏ．７、ｐｐ．４１
７−４２３）、水素化非晶質カーボン薄膜中のポリエチ
レン様結合構造について調べた。その結果、水素化非晶
質カーボン薄膜ＥＬ素子においても、やはり発光層であ
る水素化非晶質カーボン薄膜中のポリエチレン様結合構
造が４５０ｎｍ付近の青色発光を担っていることが明ら
かになった。The present inventors first discovered that in polyethylene electroluminescence, 4
We focused on the fact that blue light emission around 50 nm was obtained (
Keiichi Miyairi et al., “Transactions of the Institute of Electronics, Information and Communication Engineers C-II”
Vol. J73-C-II, No. 7, pp. 41
7-423), investigated the polyethylene-like bond structure in hydrogenated amorphous carbon thin films. As a result, it was revealed that even in the hydrogenated amorphous carbon thin film EL device, the polyethylene-like bond structure in the hydrogenated amorphous carbon thin film, which is the light emitting layer, is responsible for blue light emission around 450 nm.
【００１２】次に、本発明者らは、このポリエチレン様
結合構造を水素化非晶質カーボン薄膜中に多量に作り付
けることを目的として、水素化非晶質カーボン薄膜作製
条件の絞り込みを行った。その結果、高周波プラズマＣ
ＶＤ法を用いて、原料ガスを実質的にエチレンガスのみ
とし、基板温度を１００℃以下、反応ガス圧を０．５Ｔ
ｏｒｒ以上とした条件下で作製した水素化非晶質カーボ
ン薄膜中には、ポリエチレン様結合構造が多量に含まれ
ることを見出し、この水素化非晶質カーボン薄膜を非晶
質半導体薄膜ＥＬ素子に適用することによって、非常に
青色純度の高い非晶質半導体薄膜ＥＬ素子を作製するこ
とに成功した。ここで、水素化非晶質カーボン薄膜の作
製方法として高周波プラズマＣＶＤ法を用いた理由は、
この方法が、素子製造において、大面積での均一性及び
プロセス安定性等で最も優れた方法であるからである。Next, the present inventors narrowed down the conditions for producing a hydrogenated amorphous carbon thin film with the aim of incorporating a large amount of this polyethylene-like bonding structure into the hydrogenated amorphous carbon thin film. . As a result, high frequency plasma C
Using the VD method, the raw material gas is substantially only ethylene gas, the substrate temperature is 100°C or less, and the reaction gas pressure is 0.5T.
It was discovered that a hydrogenated amorphous carbon thin film produced under conditions of orr or higher contained a large amount of polyethylene-like bonding structure, and this hydrogenated amorphous carbon thin film was used in an amorphous semiconductor thin film EL device. By applying this method, we succeeded in producing an amorphous semiconductor thin film EL device with extremely high blue purity. Here, the reason why high frequency plasma CVD method was used as the method for producing the hydrogenated amorphous carbon thin film is as follows.
This is because this method is the most excellent method in terms of uniformity over a large area, process stability, etc. in device manufacturing.
【００１３】上述した条件中、基板温度を１００℃以下
とすると、薄膜中に多量に水素が存在するようになり、
上記ポリエチレン様結合構造の形成が促進される。また
、原料ガスとしてエチレンの実質１００％ガス（非希釈
ガス）を用い、更に反応ガス圧を０．５Ｔｏｒｒ以上と
すると、気相中での鎖状重合反応が促進され、膜中に多
量のポリエチレン様結合構造を形成することができる。
なお、水素化非晶質カーボン薄膜の安定堆積を実現する
ためには、基板温度を室温以上、反応ガス圧を２．０Ｔ
ｏｒｒ以下とすることが望ましい。Under the above conditions, if the substrate temperature is 100° C. or lower, a large amount of hydrogen will exist in the thin film,
Formation of the polyethylene-like bonding structure is promoted. In addition, when substantially 100% ethylene gas (non-diluent gas) is used as the raw material gas and the reaction gas pressure is set to 0.5 Torr or more, the chain polymerization reaction in the gas phase is promoted, and a large amount of polyethylene is contained in the film. A similar bonding structure can be formed. In addition, in order to achieve stable deposition of a hydrogenated amorphous carbon thin film, the substrate temperature must be kept above room temperature and the reaction gas pressure must be 2.0T.
It is desirable to set it to orr or less.
【００１４】[0014]
【実施例】以下、本発明の実施例を図面を参照して説明
する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【００１５】図１は、本発明の一実施例による水素化非
晶質カーボン薄膜ＥＬ素子の構造を示す概略図である。
ガラス基板１上にＳｎＯ２ を堆積して形成した透明電
極２の上に、まず、絶縁性薄膜３として、バンドギャッ
プ５．０ｅＶの非晶質シリコン窒化薄膜を平行平板型高
周波プラズマＣＶＤ装置を用い、３０００Å堆積した。
堆積条件は、ガス圧力０．４Ｔｏｒｒ、高周波出力２４
Ｗ、基板温度１８０℃、成膜ガス比 ＳｉＨ４ ：Ｎ
Ｈ３ ＝１：２０である。次に、水素化非晶質カーボン
薄膜４を、やはり平行平板型高周波プラズマＣＶＤ装置
により、１０００Å堆積した。堆積条件は、ガス圧力１
Ｔｏｒｒ、高周波出力１００Ｗ、基板温度５０℃、成膜
ガスＣ２ Ｈ４ １００％である。次に、絶縁性薄膜５
として、前記の絶縁性薄膜３と同じバンドギャップ５．
０ｅＶの非晶質シリコン窒化薄膜を３０００Å同条件で
堆積した。最後に、真空蒸着装置でクロムを蒸着し、電
極６とした。FIG. 1 is a schematic diagram showing the structure of a hydrogenated amorphous carbon thin film EL device according to an embodiment of the present invention. First, on a transparent electrode 2 formed by depositing SnO2 on a glass substrate 1, an amorphous silicon nitride thin film with a band gap of 5.0 eV is formed as an insulating thin film 3 using a parallel plate type high frequency plasma CVD apparatus. A thickness of 3000 Å was deposited. The deposition conditions were a gas pressure of 0.4 Torr and a high frequency output of 24
W, substrate temperature 180°C, film forming gas ratio SiH4:N
H3 = 1:20. Next, a hydrogenated amorphous carbon thin film 4 of 1000 Å was deposited using a parallel plate high frequency plasma CVD apparatus. The deposition conditions are gas pressure 1
Torr, high frequency output of 100 W, substrate temperature of 50° C., and film forming gas of C2 H4 of 100%. Next, the insulating thin film 5
The bandgap 5. is the same as that of the insulating thin film 3 described above.
A 0 eV amorphous silicon nitride thin film was deposited to a thickness of 3000 Å under the same conditions. Finally, chromium was vapor-deposited using a vacuum evaporator to form an electrode 6.
【００１６】図２に、本実施例で作製した水素化非晶質
カーボン薄膜ＥＬ素子の交流印加電圧１００Ｖ、印加電
圧周波数１ｋＨｚにおける発光スペクトルを示す。４５
０ｎｍの青色発光が、５２０ｎｍの緑色発光、６７０ｎ
ｍの赤色発光に比べ、非常に強くなっており、このこと
より、全体に占める青色発光の割合が増大しているのが
分かる。即ち、本発明の製造方法により、水素化非晶質
カーボン薄膜ＥＬ素子の発光スペクトルの青色純度が向
上する。FIG. 2 shows the emission spectrum of the hydrogenated amorphous carbon thin film EL device produced in this example at an applied AC voltage of 100 V and an applied voltage frequency of 1 kHz. 45
0nm blue emission, 520nm green emission, 670nm
It is much stronger than the red light emitted by m, and it can be seen that the proportion of blue light emitted in the whole is increasing. That is, the manufacturing method of the present invention improves the blue purity of the emission spectrum of the hydrogenated amorphous carbon thin film EL device.
【００１７】[0017]
【発明の効果】本発明によれば、水素化非晶質カーボン
薄膜ＥＬ素子において、発光層である水素化非晶質カー
ボン薄膜中に、青色発光の源となるポリエチレン様結合
構造を多量に作り付けることができ、その結果、水素化
非晶質カーボン薄膜ＥＬ素子の青色純度を向上させるこ
とができる。According to the present invention, in a hydrogenated amorphous carbon thin film EL device, a large amount of polyethylene-like bonding structure, which is a source of blue light emission, is created in the hydrogenated amorphous carbon thin film that is the light emitting layer. As a result, the blue purity of the hydrogenated amorphous carbon thin film EL device can be improved.
【００１８】このことにより、非晶質半導体薄膜ＥＬ素
子を用いたカラーディスプレイが可能になる。[0018] This enables a color display using an amorphous semiconductor thin film EL element.
【図１】本発明の一実施例による水素化非晶質カーボン
薄膜ＥＬ素子の構造を示す概略図である。FIG. 1 is a schematic diagram showing the structure of a hydrogenated amorphous carbon thin film EL device according to an embodiment of the present invention.
【図２】図１の水素化非晶質カーボン薄膜ＥＬ素子の発
光スペクトルを示すグラフである。FIG. 2 is a graph showing the emission spectrum of the hydrogenated amorphous carbon thin film EL device of FIG. 1;
１ ガラス基板 ２ 透明電極 ３ 絶縁性薄膜 ４ 水素化非晶質カーボン薄膜 ５ 絶縁性薄膜 ６ クロム電極 1 Glass substrate 2 Transparent electrode 3 Insulating thin film 4 Hydrogenated amorphous carbon thin film 5 Insulating thin film 6 Chromium electrode
Claims (1)
る２つの電極層を備え、これらの２つの電極層間に、バ
ンドギャップが３．５ｅＶ以上の絶縁性薄膜、水素化非
晶質カーボン薄膜及びバンドギャップが３．５ｅＶ以上
の絶縁性薄膜を順に設けた薄膜発光素子の製造方法にお
いて、前記非晶質カーボン薄膜を、高周波プラズマ化学
堆積法により、原料ガスとして実質的にエチレンガスの
みを用い、基板温度１００℃以下、反応ガス圧０．５Ｔ
ｏｒｒ以上の条件で製造することを特徴とする薄膜発光
素子の製造方法。Claim 1: Comprising two electrode layers, at least one of which is transparent or translucent, and between these two electrode layers, an insulating thin film with a band gap of 3.5 eV or more, a hydrogenated amorphous carbon thin film, and a hydrogenated amorphous carbon thin film are provided. In a method for manufacturing a thin film light emitting device in which insulating thin films having a band gap of 3.5 eV or more are sequentially provided, the amorphous carbon thin film is formed by a high frequency plasma chemical deposition method using substantially only ethylene gas as a raw material gas, Substrate temperature 100℃ or less, reaction gas pressure 0.5T
1. A method for manufacturing a thin film light emitting device, characterized in that the device is manufactured under conditions of orr or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3125420A JPH04328296A (en) | 1991-04-26 | 1991-04-26 | Manufacture of thin film light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3125420A JPH04328296A (en) | 1991-04-26 | 1991-04-26 | Manufacture of thin film light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04328296A true JPH04328296A (en) | 1992-11-17 |
Family
ID=14909667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3125420A Withdrawn JPH04328296A (en) | 1991-04-26 | 1991-04-26 | Manufacture of thin film light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04328296A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009123325A1 (en) * | 2008-03-31 | 2009-10-08 | 東京エレクトロン株式会社 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
| US8119545B2 (en) | 2008-03-31 | 2012-02-21 | Tokyo Electron Limited | Forming a silicon nitride film by plasma CVD |
-
1991
- 1991-04-26 JP JP3125420A patent/JPH04328296A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009123325A1 (en) * | 2008-03-31 | 2009-10-08 | 東京エレクトロン株式会社 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
| US8119545B2 (en) | 2008-03-31 | 2012-02-21 | Tokyo Electron Limited | Forming a silicon nitride film by plasma CVD |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980711 |