JPH04324956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04324956A
JPH04324956A JP9561891A JP9561891A JPH04324956A JP H04324956 A JPH04324956 A JP H04324956A JP 9561891 A JP9561891 A JP 9561891A JP 9561891 A JP9561891 A JP 9561891A JP H04324956 A JPH04324956 A JP H04324956A
Authority
JP
Japan
Prior art keywords
power supply
wirings
wiring
logic circuits
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9561891A
Other languages
Japanese (ja)
Inventor
Kiyohisa Kuwana
桑名 清久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP9561891A priority Critical patent/JPH04324956A/en
Publication of JPH04324956A publication Critical patent/JPH04324956A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To effectively use all chip so as to enable a semiconductor device to be lessened in size and cost by a method wherein the wiring region of a signal wiring which links logic circuits each other is reduced to the irreducible minimum, and the logic circuit region is enlarged as much as possible. CONSTITUTION:A power supply wiring or a grounding wiring 2 is partially bent at an obtuse angle and laid along logic circuits 1A, 1B, 1C,... connected together in series. The power supply wiring or the grounding wiring 2 is bent, and in result, a recess is formed on the side opposite to the logic circuits 1A, 1B, 1C,.... Then, signal wirings 5 which connect the logic circuits 1B and 1C together are provided in the recess concerned. By this setup, the wiring region of signal wirings can be reduced to the irreducible minimum, so that a semiconductor device can be miniaturized and lessened in cost.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、新規な配線パタ−ンを
有する半導体装置に関するもので、特に論理回路に接続
される複数の配線のパタ−ンとして使用される。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a novel wiring pattern, particularly for use as a pattern for a plurality of wirings connected to a logic circuit.

【0002】0002

【従来の技術】従来、論理回路に接続される複数の配線
は、例えば図4に示すようなパタ−ンで配線されている
。図4において、半導体基板上には、独立した複数個の
論理回路1A,1B,1C…が配列されている。複数個
の論理回路1A,1B,1C…に沿って電源配線(また
は接地配線)2が形成されている。また、例えば論理回
路1Aは、信号配線3により論理回路1Bに接続されて
いる。論理回路1Bは、信号配線4により論理回路1C
に接続されている。論理回路1Cは、信号配線5により
再び論理回路1Bに接続されている。ここで、信号配線
5は、論理回路1Bを迂回して配線しなければならず、
このため電源配線2上を通過する必要がある。従って、
信号配線5は、電源配線2上を通過する際に、例えば半
導体基板中に形成された拡散層配線や、電源配線2上に
形成されたポリシリコン配線などによって代替される。 なお、信号配線3〜5は、金属(例えばアルミニウム)
から構成される。
2. Description of the Related Art Conventionally, a plurality of wires connected to a logic circuit are wired in a pattern as shown in FIG. 4, for example. In FIG. 4, a plurality of independent logic circuits 1A, 1B, 1C, . . . are arranged on a semiconductor substrate. A power supply wiring (or ground wiring) 2 is formed along the plurality of logic circuits 1A, 1B, 1C, . . . . Further, for example, the logic circuit 1A is connected to the logic circuit 1B by a signal wiring 3. The logic circuit 1B is connected to the logic circuit 1C by the signal wiring 4.
It is connected to the. Logic circuit 1C is again connected to logic circuit 1B by signal wiring 5. Here, the signal wiring 5 must be routed bypassing the logic circuit 1B,
Therefore, it is necessary to pass over the power supply wiring 2. Therefore,
When the signal wiring 5 passes over the power supply wiring 2, it is replaced by, for example, a diffusion layer wiring formed in a semiconductor substrate, a polysilicon wiring formed on the power supply wiring 2, or the like. Note that the signal wirings 3 to 5 are made of metal (for example, aluminum).
It consists of

【0003】しかしながら、かかる場合、信号配線5は
、論理回路1Bを迂回して配線されるため、配線領域が
別途必要となり、チップ全体の面積に占める配線領域の
割合が増大するという欠点がある。しかも、図4におい
て、破線で囲んだ領域について検討すると、配線領域に
おいて何も形成されない空白領域Aが形成されてしまう
。この空白領域Aは、論理回路などを形成できないため
、無駄な領域となってしまう欠点がある。また、上記構
成の回路パタ−ンが連続的に形成されている場合には、
この空白領域Aは莫大なものとなり、無視することがで
きなくなる。
However, in such a case, since the signal wiring 5 is routed around the logic circuit 1B, a separate wiring area is required, which has the disadvantage that the ratio of the wiring area to the entire chip area increases. Moreover, when considering the area surrounded by the broken line in FIG. 4, a blank area A in which nothing is formed is formed in the wiring area. This blank area A has the disadvantage that it becomes a wasted area because a logic circuit or the like cannot be formed therein. In addition, when the circuit pattern with the above configuration is formed continuously,
This blank area A becomes enormous and cannot be ignored.

【0004】また、隣接する論理回路1Aと論理回路1
Bとの間隔Bは、図5に示すように、例えば電源配線2
上に形成されたポリシリコン配線6の最小間隔Cに制限
されてしまう欠点がある。これは、ポリシリコン配線6
の最上部と論理回路1Aとの距離D1 および最下部と
論理回路1Bとの距離D2 を一定距離だけ設けなけれ
ばならないことに起因する。このため、チップ全体の面
積に占める論理回路領域の割合が小さくなる欠点があり
、結果として製造コストの増大にもつながっていた。な
お、7,8はそれぞれ金属配線を示している。
[0004] Also, adjacent logic circuit 1A and logic circuit 1
For example, as shown in FIG.
There is a drawback that it is limited by the minimum interval C between the polysilicon interconnects 6 formed above. This is polysilicon wiring 6
This is due to the fact that the distance D1 between the top and the logic circuit 1A and the distance D2 between the bottom and the logic circuit 1B must be provided by a certain distance. This has the disadvantage that the ratio of the logic circuit area to the total area of the chip becomes small, which results in an increase in manufacturing costs. Note that 7 and 8 indicate metal wiring, respectively.

【0005】[0005]

【発明が解決しようとする課題】このように、従来は、
信号配線の数が増大するにつれて、チップ全体の面積に
占める配線領域の割合が増大することに加えて、論理回
路領域の拡大は事実上不可能に近い状態となっており、
半導体装置の小形化、低価格化の障害となる欠点があっ
た。
[Problem to be solved by the invention] In this way, conventionally,
As the number of signal lines increases, the proportion of the wiring area in the overall chip area increases, and it has become virtually impossible to expand the logic circuit area.
There were drawbacks that hindered the miniaturization and cost reduction of semiconductor devices.

【0006】本発明は、上記欠点を解決すべくなされた
ものであり、複数の論理回路を互いに接続する信号配線
の配線領域を最小限に抑えると共にいわゆる空白領域を
なくし、さらに論理回路領域をできる限り拡大すること
によって、チップ全体を有効に活用し、半導体装置の小
形化、低価格化を達成することを目的とする。
The present invention has been made in order to solve the above-mentioned drawbacks, and it is possible to minimize the wiring area of signal wiring connecting a plurality of logic circuits to each other, eliminate so-called blank areas, and further increase the logic circuit area. The aim is to effectively utilize the entire chip by expanding the size of the chip as much as possible, thereby achieving smaller size and lower cost of semiconductor devices.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、本発明の半導体装置は、直列接続された複数個の論
理回路と、前記複数個の論理回路に沿って配線され、そ
の一部が鈍角に屈曲している電源または接地配線と、前
記電源または接地配線上および前記電源または接地配線
の屈曲により前記複数個の論理回路側とは反対側に形成
された凹部に少なくとも配線され、一の論理回路と他の
論理回路とを接続する複数の信号配線とを備えている。
[Means for Solving the Problems] In order to achieve the above object, a semiconductor device of the present invention includes a plurality of logic circuits connected in series, a part of which is wired along the plurality of logic circuits, and a semiconductor device of the present invention. a power supply or ground wiring that is bent at an obtuse angle, and a recess formed on the power supply or ground wiring and on the side opposite to the plurality of logic circuits by the bend of the power supply or ground wiring; The logic circuit includes a plurality of signal wirings that connect the logic circuit and other logic circuits.

【0008】[0008]

【作用】上記構成によれば、電源または接地配線の一部
が鈍角に屈曲しており、かつその屈曲により前記複数個
の論理回路側とは反対側に形成される凹部に、一の論理
回路と他の論理回路とを接続する複数の信号配線が配線
されている。これにより、複数個の論理回路を互いに接
続する信号配線の配線領域を最小限に抑えることや、空
白領域をなくすことができ、チップ全体を有効に活用す
ることができる。
[Function] According to the above configuration, a part of the power supply or ground wiring is bent at an obtuse angle, and one logic circuit is placed in the recess formed on the opposite side of the plurality of logic circuits due to the bend. A plurality of signal wirings are wired to connect the logic circuit and other logic circuits. As a result, it is possible to minimize the wiring area of signal wirings that interconnect a plurality of logic circuits, eliminate blank areas, and effectively utilize the entire chip.

【0009】[0009]

【実施例】以下、図面を参照しながら本発明の一実施例
について詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

【0010】図1は、本発明の一実施例に係わる半導体
装置の回路パタ−ンを概略的に示すものである。図1に
おいて、説明をわかり易くするため、従来例である図4
に対応する部分には同じ符号を付すこととする。また、
電源配線2を基準として、論理回路が配置される側を内
側、その反対側を外側と称することとする。
FIG. 1 schematically shows a circuit pattern of a semiconductor device according to an embodiment of the present invention. In FIG. 1, in order to make the explanation easier to understand, FIG.
The same reference numerals are given to the corresponding parts. Also,
With the power supply wiring 2 as a reference, the side on which the logic circuit is arranged will be referred to as the inside, and the opposite side will be referred to as the outside.

【0011】半導体基板上には、独立した複数個の論理
回路1A,1B,1C…が信号配線3,4によって直列
に接続されている。複数個の論理回路1A,1B,1C
…に沿って電源配線2が配線されている。ここまでは、
従来と同様である。但し、電源配線2は、従来のように
、直線状に延びてはおらず、一部が鈍角に折り曲がって
いる。また、電源配線2の一部を折り曲げた結果、電源
配線2の外側には凹部が形成される。信号配線5は、こ
の凹部に配線されることとなり、従来存在していた無駄
な配線領域(空白領域)をなくすことができる。一方、
電源配線2の内側では、前記無駄な配線領域をそっくり
論理回路領域(例えば領域D)に取り入れることができ
る。これにより、無駄な配線領域をなくし、論理回路領
域を拡大することができる。
A plurality of independent logic circuits 1A, 1B, 1C, . . . are connected in series by signal wirings 3, 4 on the semiconductor substrate. Multiple logic circuits 1A, 1B, 1C
The power supply wiring 2 is wired along... So far,
Same as before. However, the power supply wiring 2 does not extend linearly as in the conventional case, but is partially bent at an obtuse angle. Furthermore, as a result of bending a portion of the power supply wiring 2, a recessed portion is formed on the outside of the power supply wiring 2. The signal wiring 5 is wired in this recessed portion, and the wasteful wiring area (blank area) that conventionally existed can be eliminated. on the other hand,
Inside the power supply wiring 2, the useless wiring area can be completely incorporated into the logic circuit area (for example, area D). This makes it possible to eliminate unnecessary wiring areas and expand the logic circuit area.

【0012】図1において、破線で囲んだ部分は、図4
の破線で囲んだ部分に相当するものである。つまり、本
発明では、電源配線の外側に形成されていた従来の空白
領域Aをなくし、論理回路領域に新たな領域Dを形成で
きる。
[0012] In FIG. 1, the part surrounded by a broken line is shown in FIG.
This corresponds to the part surrounded by the broken line. That is, in the present invention, the conventional blank area A formed outside the power supply wiring can be eliminated, and a new area D can be formed in the logic circuit area.

【0013】また、従来、電源配線上のポリシリコン配
線の最小間隔に制限されていた論理回路1Aと論理回路
1Bとの間隔Bは、例えば図2に示すような構成にする
ことでさらに縮めることができる。即ち、金属配線7の
幅は、ポリシリコン配線6の幅に比べ狭いことは、その
抵抗値から明らかである。そこで、論理回路1Aと論理
回路1Bの間に配線される複数の金属配線7の相互の間
隔を最小限に縮める。なお、複数の金属配線7は、階段
状に配線するのが効果的である。このようにすれば、論
理回路1Aと論理回路1Bとの間隔Bは、最大限で金属
配線7の最小間隔C´によって制限されることとなる。 つまり、論理回路1Aと論理回路1Bとの間隔は、従来
と比べ最大限でC−C´だけ縮めることができる。これ
により、さらに論理回路領域を拡大することができる。 なお、図2において、論理回路1Aの位置は、その論理
回路1Aの大きさや信号配線の数や電源の供給の仕方な
どにより、適切に選ぶことができる。
Furthermore, the distance B between the logic circuit 1A and the logic circuit 1B, which was conventionally limited to the minimum distance between the polysilicon wirings on the power supply wiring, can be further reduced by adopting a configuration as shown in FIG. 2, for example. Can be done. That is, it is clear from the resistance value that the width of the metal wiring 7 is narrower than the width of the polysilicon wiring 6. Therefore, the mutual spacing between the plurality of metal wires 7 wired between the logic circuit 1A and the logic circuit 1B is reduced to the minimum. Note that it is effective to wire the plurality of metal wires 7 in a stepwise manner. In this way, the distance B between the logic circuit 1A and the logic circuit 1B is limited to the maximum by the minimum distance C' between the metal wirings 7. In other words, the distance between the logic circuit 1A and the logic circuit 1B can be reduced by C-C' at the maximum compared to the conventional one. This allows the logic circuit area to be further expanded. In FIG. 2, the position of the logic circuit 1A can be appropriately selected depending on the size of the logic circuit 1A, the number of signal wirings, the method of supplying power, and the like.

【0014】[0014]

【発明の効果】以上、説明したように、本発明の半導体
装置によれば、次のような効果を奏する。
As described above, the semiconductor device of the present invention provides the following effects.

【0015】複数の論理回路を互いに接続する信号配線
の配線領域を最小限に抑えると共にいわゆる空白領域を
なくし、さらに論理回路領域をできる限り拡大すること
によって、チップ面積を十分に小さくでき(図3参照)
、半導体装置の小形化、低価格化を達成できる。
The chip area can be made sufficiently small by minimizing the wiring area of the signal lines that interconnect multiple logic circuits, eliminating so-called blank areas, and further expanding the logic circuit area as much as possible (FIG. 3). reference)
, miniaturization and cost reduction of semiconductor devices can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例に係わる半導体装置の平面パ
タ−ン図。
FIG. 1 is a plan pattern diagram of a semiconductor device according to an embodiment of the present invention.

【図2】本発明の他の実施例に係わる半導体装置の平面
パタ−ン図。
FIG. 2 is a planar pattern diagram of a semiconductor device according to another embodiment of the present invention.

【図3】本発明の効果を示す図。FIG. 3 is a diagram showing the effects of the present invention.

【図4】従来の半導体装置の平面パタ−ン図。FIG. 4 is a planar pattern diagram of a conventional semiconductor device.

【図5】従来の半導体装置の平面パタ−ン図。FIG. 5 is a planar pattern diagram of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1A,1B,1C…:論理回路、2:電源配線、3,4
,5:信号配線、6:ポリシリコン配線、7,8:金属
配線。
1A, 1B, 1C...: Logic circuit, 2: Power supply wiring, 3, 4
, 5: Signal wiring, 6: Polysilicon wiring, 7, 8: Metal wiring.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】  直列接続された複数個の論理回路と、
前記複数個の論理回路に沿って配線され、その一部が鈍
角に屈曲している電源または接地配線と、前記電源また
は接地配線の屈曲により前記複数個の論理回路側とは反
対側に形成された凹部に少なくとも配線され、一の論理
回路と他の論理回路とを接続する複数の信号配線とを具
備することを特徴とする半導体装置。
[Claim 1] A plurality of logic circuits connected in series;
A power supply or ground wiring that is wired along the plurality of logic circuits and a part of which is bent at an obtuse angle, and a power supply or ground wiring that is formed on the side opposite to the plurality of logic circuits by bending the power supply or ground wiring What is claimed is: 1. A semiconductor device comprising: a plurality of signal wires that are wired at least in a recessed portion and connect one logic circuit to another logic circuit.
【請求項2】  前記複数の信号配線は、前記電源また
は接地配線上に配線される複数のポリシリコン配線と、
前記電源または接地配線の屈曲により前記複数個の論理
回路側とは反対側に形成された凹部に配線される複数の
第1の金属配線と、一端が前記複数のポリシリコン配線
に接続され、他端が所定の論理回路に接続され、前記一
端側から前記他端側へ階段状に配線される複数の第2の
金属配線とから構成されていることを特徴とする請求項
1記載の半導体装置。
2. The plurality of signal wirings include a plurality of polysilicon wirings routed on the power supply or ground wiring;
a plurality of first metal wires wired in a recess formed on a side opposite to the plurality of logic circuits by bending the power supply or ground wire; one end connected to the plurality of polysilicon wires; 2. The semiconductor device according to claim 1, further comprising a plurality of second metal wirings whose ends are connected to a predetermined logic circuit and which are wired in a stepped manner from the one end side to the other end side. .
【請求項3】  前記複数の信号配線は、前記電源また
は接地配線下に形成される複数の拡散層配線と、前記電
源または接地配線の屈曲により前記複数個の論理回路側
とは反対側に形成された凹部に配線される複数の第1の
金属配線と、一端が前記複数の拡散層配線に接続され、
他端が所定の論理回路に接続され、前記一端側から前記
他端側へ階段状に配線される複数の第2の金属配線とか
ら構成されていることを特徴とする請求項1記載の半導
体装置。
3. The plurality of signal wirings are formed on a side opposite to the plurality of logic circuits by a plurality of diffusion layer wirings formed under the power supply or ground wiring and bending of the power supply or ground wiring. a plurality of first metal wirings wired in the recessed portions, one end of which is connected to the plurality of diffusion layer wirings;
2. The semiconductor according to claim 1, further comprising a plurality of second metal wirings whose other ends are connected to a predetermined logic circuit and which are wired in a stepped manner from the one end side to the other end side. Device.
【請求項4】  直列接続された複数個の論理回路と、
前記複数個の論理回路に沿って配線される電源または接
地配線と、前記電源または接地配線上に配線される複数
のポリシリコン配線と、一端が前記複数のポリシリコン
配線に接続され、他端が所定の論理回路に接続され、前
記一端側から前記他端側へ階段状に配線される複数の金
属配線とを具備することを特徴とする半導体装置。
[Claim 4] A plurality of logic circuits connected in series;
A power supply or ground wiring line that is routed along the plurality of logic circuits, a plurality of polysilicon wirings that are routed on the power supply or ground wiring, one end of which is connected to the plurality of polysilicon wirings, and the other end of which is connected to the plurality of polysilicon wirings; 1. A semiconductor device comprising: a plurality of metal wires connected to a predetermined logic circuit and wired in a stepped manner from the one end side to the other end side.
【請求項5】  直列接続された複数個の論理回路と、
前記複数個の論理回路に沿って配線される電源または接
地配線と、前記電源または接地配線下に形成される複数
の拡散層配線と、一端が前記複数の拡散層配線に接続さ
れ、他端が所定の論理回路に接続され、前記一端側から
前記他端側へ階段状に配線される複数の金属配線とを具
備することを特徴とする半導体装置。
[Claim 5] A plurality of logic circuits connected in series;
A power supply or ground line wired along the plurality of logic circuits, a plurality of diffusion layer wirings formed under the power supply or ground wirings, one end connected to the plurality of diffusion layer wirings, and the other end connected to the plurality of diffusion layer wirings. 1. A semiconductor device comprising: a plurality of metal wires connected to a predetermined logic circuit and wired in a stepped manner from the one end side to the other end side.
JP9561891A 1991-04-25 1991-04-25 Semiconductor device Withdrawn JPH04324956A (en)

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JP9561891A JPH04324956A (en) 1991-04-25 1991-04-25 Semiconductor device

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Application Number Priority Date Filing Date Title
JP9561891A JPH04324956A (en) 1991-04-25 1991-04-25 Semiconductor device

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JPH04324956A true JPH04324956A (en) 1992-11-13

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326192A (en) * 1993-05-13 1994-11-25 Nec Corp Automatically designing method for layout of lsi
US7402904B2 (en) 2004-08-23 2008-07-22 Kabushiki Kaisha Toshiba Semiconductor device having wires that vary in wiring pitch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326192A (en) * 1993-05-13 1994-11-25 Nec Corp Automatically designing method for layout of lsi
US7402904B2 (en) 2004-08-23 2008-07-22 Kabushiki Kaisha Toshiba Semiconductor device having wires that vary in wiring pitch

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