JPH04318168A - Ion composite cvd method and device therefor - Google Patents
Ion composite cvd method and device thereforInfo
- Publication number
- JPH04318168A JPH04318168A JP8554091A JP8554091A JPH04318168A JP H04318168 A JPH04318168 A JP H04318168A JP 8554091 A JP8554091 A JP 8554091A JP 8554091 A JP8554091 A JP 8554091A JP H04318168 A JPH04318168 A JP H04318168A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ion
- cvd
- ion implantation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000002131 composite material Substances 0.000 title claims description 4
- 150000002500 ions Chemical class 0.000 claims abstract description 64
- 239000010408 film Substances 0.000 claims abstract description 45
- 238000005468 ion implantation Methods 0.000 claims abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 11
- 230000007935 neutral effect Effects 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005086 pumping Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、イオン注入等のイオン
入射とＣＶＤを複合化させて成膜するイオン複合ＣＶＤ
法及びその装置に関するものである。[Industrial Application Field] The present invention is directed to ion composite CVD, which combines ion injection such as ion implantation and CVD to form a film.
It concerns the law and its devices.
【０００２】0002
【従来の技術】従来、数１０Åから数ｍｍの被膜を基板
上に堆積させる場合、例えば基板に半導体，金属化合物
等の被膜を形成したり、表面処理（硬質，耐蝕，耐熱，
耐摩耗処理）などを行う場合、ＰＶＤやＣＶＤ装置など
が使用されている。[Prior Art] Conventionally, when depositing a film with a thickness of several tens of Å to several mm on a substrate, for example, a film of a semiconductor, a metal compound, etc. is formed on the substrate, or a surface treatment (hardness, corrosion resistance, heat resistance,
When performing wear-resistant treatment, etc., PVD or CVD equipment is used.
【０００３】通常、イオン注入，イオンミキシングは、
イオン発生，イオン入射系が低圧力（１０−４ｔｏｒｒ
以下）を必要とするため、その成膜方法は、ＰＶＤ（物
理蒸着，スパッタリング）が使われている。[0003]Ion implantation and ion mixing are usually
Ion generation and ion injection systems are operated at low pressure (10-4 torr)
PVD (physical vapor deposition, sputtering) is used as the film forming method.
【０００４】図３は従来のイオンミキシング装置を示し
たもので、図において真空チャンバーａ内に基板ｂが配
置され、真空チャンバーａに基板ｂに向けてイオンを照
射するイオン源ｃが接続され、また真空チャンバーａ内
に真空蒸着用電子銃ｄが設けられ、電子銃ｄで蒸発され
た金属等の蒸気がイオン源ｃからのイオンでミキシング
されて基板ｂに蒸着されるようになっている。なお、ｅ
は真空排気装置である。FIG. 3 shows a conventional ion mixing device, in which a substrate b is placed in a vacuum chamber a, an ion source c for irradiating ions toward the substrate b is connected to the vacuum chamber a, Further, an electron gun d for vacuum deposition is provided in the vacuum chamber a, and the vapor of metal or the like evaporated by the electron gun d is mixed with ions from an ion source c and is deposited on the substrate b. In addition, e
is a vacuum evacuation device.
【０００５】他方、ＣＶＤ法は、種々の原料ガス（反応
ガス）を所定の温度に加熱された被処理物（例えば基板
）付近へ導き、その表面に気相から反応生成物を析出さ
せる方法で、これにより被処理物上に被膜が生成される
。半導体特性や被膜の結晶性，構造を制御するにはＣＶ
Ｄ法の方が良い場合がある。On the other hand, the CVD method is a method in which various raw material gases (reactive gases) are introduced near the object to be processed (for example, a substrate) heated to a predetermined temperature, and reaction products are deposited from the gas phase on the surface of the object. , whereby a film is formed on the object to be treated. CV is used to control semiconductor properties, film crystallinity, and structure.
There are cases where method D is better.
【０００６】[0006]
【発明が解決しようとする課題】ところで、イオン注入
，イオンミキシング法は、イオンの平均自由行程が十分
長くないと残留気体分子によって途中散乱され目標物（
基板等）にイオンを衝突させられないため、低圧力（１
０−４ｔｏｒｒ以下）を必要とする。他方ＣＶＤ法は、
一般に成膜圧力が常圧〜１０−２ｔｏｒｒ位と高く、例
えばダイヤモンド膜、ＳｉＣ，Ｓｉ膜では１〜５０ｔｏ
ｒｒ位が多く使われている。By the way, in ion implantation and ion mixing methods, if the mean free path of the ions is not long enough, they will be scattered on the way by residual gas molecules and will not reach the target (
Low pressure (1
(0-4 torr or less). On the other hand, the CVD method
Generally, the film forming pressure is high, ranging from normal pressure to 10-2 torr, for example, 1 to 50 torr for diamond films, SiC, and Si films.
The rr position is often used.
【０００７】従って、ＣＶＤ法とイオン注入やイオンミ
キシングを併用することはできず、それぞれ別個に成膜
を行うことしかなされていない。[0007] Therefore, it is not possible to use the CVD method together with ion implantation or ion mixing, and the only way to do this is to form a film separately for each.
【０００８】そこで、本発明は、このような事情を考慮
してなされたものであり、その目的は、ＣＶＤ法とイオ
ン注入等を併用できるイオン複合ＣＶＤ法及びその装置
を提供することにある。[0008] The present invention has been made in consideration of the above circumstances, and its object is to provide an ion composite CVD method and an apparatus therefor that can use CVD and ion implantation in combination.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明は低圧領域で基板にＣＶＤ法により薄膜を成
膜すると共に差圧調整手段を通してその成膜に高速イオ
ン注入，イオンミキシングあるいは高速中性粒子を入射
させて成膜する方法であり、また基板にＣＶＤ膜を形成
するためのＣＶＤ真空容器と、その真空容器に差動排気
部を介して接続され、ＣＶＤ成膜中の基板上の被膜に高
速イオン及び高速中性粒子を照射するためのイオン注入
装置とを備えた装置である。[Means for Solving the Problems] In order to achieve the above object, the present invention forms a thin film on a substrate in a low pressure region by the CVD method, and uses high-speed ion implantation, ion mixing, or This is a method of forming a film by injecting high-speed neutral particles into the substrate, and also includes a CVD vacuum chamber for forming a CVD film on a substrate, and a method connected to the vacuum chamber via a differential pump to form a CVD film on the substrate during CVD film formation. This device is equipped with an ion implantation device for irradiating the upper coating with high-speed ions and high-speed neutral particles.
【００１０】0010
【作用】上記構成によれば、低圧領域、例えば１０−３
〜１０−４ｔｏｒｒ以下の圧力領域でＣＶＤ法による成
膜を行っている基板に向けて高速イオンをイオン注入，
イオンミキシングの目的で入射させると、平均自由行程
（例えば１０−３〜１０−４ｔｏｒｒで５〜５０ｃｍ）
前後の距離イオンが進んで空間に存在するガス分子，
原子等で一部散乱されるが残りは散乱されずに基板上の
被膜へ到達してイオン注入，イオンミキシングがなされ
、また散乱されたイオンは、中性高速粒子となって基板
に衝突しこれもまた被膜に注入，ミキシングされること
となり高性能の被膜を得ることができる。またイオン注
入装置とＣＶＤ真空容器とはオリフィスなどで差圧調整
され、その間が差動排気されるため両者に圧力差があっ
ても支障がない。[Operation] According to the above configuration, the low pressure region, for example 10-3
High-velocity ions are implanted into a substrate on which a film is being formed by CVD in a pressure range of ~10-4 torr or less.
When injected for the purpose of ion mixing, the mean free path (for example, 5 to 50 cm at 10-3 to 10-4 torr)
Gas molecules existing in space with ions traveling forward and backward distance,
Some of the ions are scattered by atoms, etc., but the rest is not scattered and reaches the coating on the substrate for ion implantation and ion mixing, and the scattered ions become neutral high-speed particles that collide with the substrate. is also injected into the film and mixed, making it possible to obtain a high-performance film. Further, the pressure difference between the ion implantation device and the CVD vacuum vessel is adjusted by an orifice or the like, and the space between them is differentially evacuated, so there is no problem even if there is a pressure difference between the two.
【００１１】[0011]
【実施例】以下、本発明の一実施例を添付図面に基づい
て説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings.
【００１２】図１において、１はＣＶＤ真空容器を示し
、このＣＶＤ真空容器１には真空ポンプ２が接続されて
いる。In FIG. 1, reference numeral 1 indicates a CVD vacuum vessel, and a vacuum pump 2 is connected to this CVD vacuum vessel 1.
【００１３】ＣＶＤ真空容器１内には、基板３が配置さ
れ、またその基板３を適宜の温度に加熱する基板ヒータ
４が設けられ、またＣＶＤ真空容器１には、プラズマ源
５が接続されている。またＣＶＤ真空容器１には、容器
１内に種々の反応ガスを導入するためのＣＶＤガス供給
源８ａが接続されている。A substrate 3 is disposed inside the CVD vacuum chamber 1, and a substrate heater 4 for heating the substrate 3 to an appropriate temperature is provided.A plasma source 5 is connected to the CVD vacuum chamber 1. There is. Further, a CVD gas supply source 8a for introducing various reaction gases into the container 1 is connected to the CVD vacuum container 1.
【００１４】このＣＶＤ真空容器１には、イオン注入装
置６が接続される。イオン注入装置６は、イオン発生部
７と、そのイオン発生部７に種々のイオン源ガスを供給
するイオン源ガス供給源８ｂと、イオン発生部７の出口
に設けられたイオン引出し用加速電極９と、その加速電
源９と、イオン発生部７の出口ダクト１１に設けられた
真空ポンプ１２と、出口ダクト１２からのイオンを偏向
して質量分離を行う質量分離器１３と、質量分離器１３
とＣＶＤ真空容器１とを結びかつ出口に差圧調整手段で
あるオリフィス１４が設けられたイオン注入ダクト１５
からなる。また出口ダクト１１の上流側にも適宜オリフ
ィス１６が設けられる。An ion implantation device 6 is connected to this CVD vacuum chamber 1 . The ion implanter 6 includes an ion generating section 7, an ion source gas supply source 8b that supplies various ion source gases to the ion generating section 7, and an ion extraction accelerating electrode 9 provided at the exit of the ion generating section 7. , the acceleration power source 9, a vacuum pump 12 provided in the outlet duct 11 of the ion generating section 7, a mass separator 13 that deflects ions from the outlet duct 12 to perform mass separation, and a mass separator 13.
An ion implantation duct 15 connects the CVD vacuum vessel 1 and the ion implantation duct 15 and is provided with an orifice 14 serving as differential pressure adjustment means at the outlet.
Consisting of Further, an orifice 16 is appropriately provided on the upstream side of the outlet duct 11.
【００１５】尚オリフィス１１の開口は小さくしておけ
ば、ＣＶＤ真空容器１からＣＶＤガスがイオン注入装置
６側に流れても大した影響はない。またオリフィス１１
を二段にして中間からガス抜きをするか、この部分に薄
膜を張り、ＣＶＤガスは通過させずに、高エネルギーイ
オンは通過するように構成してもよい。Note that if the opening of the orifice 11 is kept small, even if the CVD gas flows from the CVD vacuum chamber 1 to the ion implantation device 6 side, there will be no major influence. Also, orifice 11
It is also possible to arrange the structure in two stages and vent the gas from the middle, or to apply a thin film to this part so that the CVD gas does not pass through but high-energy ions pass through.
【００１６】以上において、ＣＶＤ真空容器１内が真空
ポンプ２にて１０−３〜１０−４ｔｏｒｒ以下にされ、
その状態でＣＶＤガス供給源８ａからＣＶＤガスが容器
１内に供給されると、低圧ＣＶＤ法（例えば熱、プラズ
マ（直流放電，高周波放電，マイクロ波放電等）、光な
ど）で基板３上に成膜される。この低圧ＣＶＤ成膜を行
っている容器１内にイオン注入装置６より数ＫｅＶ〜数
ＭｅＶの高速イオンを導入し、成膜を行っている基板３
上の被膜にイオン又は中性粒子を衝突させて注入，ミキ
シングすることにより、被膜と基板３との密着性，被膜
の構造，電気特性が良好な被膜が形成できる。[0016] In the above, the inside of the CVD vacuum vessel 1 is brought to below 10-3 to 10-4 torr by the vacuum pump 2,
When CVD gas is supplied into the container 1 from the CVD gas supply source 8a in this state, it is applied onto the substrate 3 using a low pressure CVD method (for example, heat, plasma (DC discharge, high frequency discharge, microwave discharge, etc.), light, etc.). A film is formed. High-speed ions of several KeV to several MeV are introduced from the ion implantation device 6 into the container 1 where the low-pressure CVD film is being formed, and the substrate 3 where the film is being formed.
By bombarding the upper film with ions or neutral particles, implanting and mixing them, a film with good adhesion between the film and the substrate 3, good film structure, and good electrical properties can be formed.
【００１７】すなわち、高速イオンをイオン注入，イオ
ンミキシングの目的で基板３の被膜に入射させると、平
均自由行程（例えば１０−３〜１０−４ｔｏｒｒで５〜
５０ｃｍ） 前後の距離イオンが進んで空間に存在する
ガス分子，原子等で一部散乱されるが残りは散乱されず
に基板３上の被膜へ到達してイオン注入，イオンミキシ
ングがなされ、また散乱されたイオンは、中性高速粒子
となって基板３に衝突しこれもまた被膜に注入，ミキシ
ングされることとなり高性能の被膜を得ることができる
。That is, when high-speed ions are introduced into the coating of the substrate 3 for the purpose of ion implantation and ion mixing, the mean free path (for example, 5 to 5 at 10-3 to 10-4 torr)
50cm) As the ions advance forward and backward, some of them are scattered by gas molecules, atoms, etc. existing in the space, but the rest is not scattered and reaches the coating on the substrate 3, where ion implantation, ion mixing, and scattering occur again. The resulting ions become neutral high-speed particles that collide with the substrate 3, and are also injected into the coating and mixed, making it possible to obtain a high-performance coating.
【００１８】またイオンを注入するにおいて、イオン発
生部７内は１０−４〜１０−７ｔｏｒｒ台に保持する必
要があるが、ＣＶＤ真空容器１内の圧力が１０−３〜１
０−４ｔｏｒｒと低く、またイオン注入ダクト１５の出
口にオリフィス１４が設けられるため、差動排気が行え
、イオン発生部７内の圧力を支障なく保持できる。Furthermore, when implanting ions, it is necessary to maintain the inside of the ion generating section 7 at a level of 10-4 to 10-7 torr, but the pressure inside the CVD vacuum chamber 1 must be maintained at 10-3 to 1 torr.
Since the pressure is as low as 0-4 torr and the orifice 14 is provided at the exit of the ion implantation duct 15, differential pumping can be performed and the pressure within the ion generating section 7 can be maintained without any problem.
【００１９】以上において、基板３にダイアモンド薄膜
，ＳｉＣ，Ｓｉ薄膜等をＣＶＤ法で成膜中にＢ，Ｐなど
の不純物をイオン注入，ミキシングすることにより、Ｃ
ＶＤ中に不純物ガスを混入する場合に比べはるかにキャ
リア濃度（半導体特性）を正確に制御できる。また半導
体の一部（ａ−Ｓｉ，Ｓｉ，ダイヤモンド，ＳｉＣ，Ｇ
ｅその他）や高温セラミックス（ダイヤモンド，ＳｉＣ
，ＢＮなど）は、ＰＶＤよりＣＶＤプロセスの方が良質
な被膜化が可能であり、これとイオン注入，イオンミキ
シングを複合化させることにより高性能の被膜を得るこ
とができる。In the above, while forming a diamond thin film, SiC, Si thin film, etc. on the substrate 3 by the CVD method, impurities such as B and P are ion-implanted and mixed.
The carrier concentration (semiconductor characteristics) can be controlled much more accurately than when an impurity gas is mixed into the VD. Also, some semiconductors (a-Si, Si, diamond, SiC, G
etc.) and high-temperature ceramics (diamond, SiC
, BN, etc.) can be formed into a film of better quality by the CVD process than by the PVD process, and by combining this with ion implantation and ion mixing, a high-performance film can be obtained.
【００２０】図２は本発明の他の実施例を示し、図にお
いて、２１はＣＶＤ真空容器を示し、この真空容器２１
には真空排気装置２２が接続されている。FIG. 2 shows another embodiment of the present invention, in which 21 indicates a CVD vacuum vessel, and this vacuum vessel 21
A vacuum evacuation device 22 is connected to.
【００２１】ＣＶＤ真空容器２１内には、基板３が反応
容器２４に囲まれて設けられる。この反応容器２４には
、基板３を適宜の温度に加熱する補助ヒータ２５及びそ
の温度制御器２６が設けられ、また電磁場付加装置２７
や高周波等の発振器２８が設けられる。[0021] In the CVD vacuum vessel 21, a substrate 3 is provided surrounded by a reaction vessel 24. This reaction vessel 24 is provided with an auxiliary heater 25 for heating the substrate 3 to an appropriate temperature and its temperature controller 26, and an electromagnetic field applying device 27.
A high frequency oscillator 28 is provided.
【００２２】ＣＶＤ真空容器２１には、気体原料供給装
置２９からのＣＶＤ原料ガスをプラズマ化して基板３に
供給する複数のプラズマ生成容器３０，３１が接続され
る。このＣＶＤ真空容器２１には、オリフィス３２から
なる差動排気部３３を介してイオン注入装置３４が接続
される。イオン注入装置３４は、気体原料供給装置２９
からのイオン源ガスをイオン化するイオン発生部３５と
、そのイオン発生部３５の出口に設けられたイオン引出
し用加速電極３６と、イオン発生部３５の出口に設けら
れイオンを偏向して質量分離を行う質量分離器３７と、
質量分離器３７の出口に設けられた収束レンズ系３８と
、質量分離器３７とＣＶＤ真空容器２１とを結ぶイオン
注入ダクト３９からなり、そのダクト３９と質量分離器
３７とがオリフィス３２で接続されると共に質量分離器
３７側に差動排気系４０が接続されて差動排気部３３が
構成される。またイオン注入ダクト３９内にはイオンビ
ームＢを偏向する偏向系４１が設けられ、またそのイオ
ン注入ダクト３９の出口に臨んでスパッタターゲット４
２が設けられる。A plurality of plasma generation vessels 30 and 31 are connected to the CVD vacuum vessel 21, which convert CVD raw material gas from the gaseous raw material supply device 29 into plasma and supply the plasma to the substrate 3. An ion implantation device 34 is connected to this CVD vacuum chamber 21 via a differential pumping section 33 consisting of an orifice 32 . The ion implantation device 34 is connected to the gas source supply device 29
an ion generating section 35 that ionizes the ion source gas from the ion generating section 35; an ion extraction accelerating electrode 36 provided at the exit of the ion generating section 35; and an ion extraction accelerating electrode 36 provided at the exit of the ion generating section 35 that deflects ions and performs mass separation a mass separator 37 that performs
It consists of a converging lens system 38 provided at the exit of the mass separator 37 and an ion implantation duct 39 connecting the mass separator 37 and the CVD vacuum vessel 21, and the duct 39 and the mass separator 37 are connected by an orifice 32. At the same time, a differential pumping system 40 is connected to the mass separator 37 side, thereby forming a differential pumping section 33. Further, a deflection system 41 for deflecting the ion beam B is provided inside the ion implantation duct 39, and a sputter target 4 is provided facing the exit of the ion implantation duct 39.
2 is provided.
【００２３】以上において、ＣＶＤ真空容器２１内が真
空ポンプ２２にて１０−２〜１０−３ｔｏｒｒ以下にさ
れ、その状態でプラズマ生成容器３０，３１から適宜の
ＣＶＤプラズマガスが真空容器２１内に供給されると、
低圧ＣＶＤ法で基板３に成膜される。この低圧ＣＶＤ成
膜を行っている真空容器１内にイオン注入装置２６より
数ＫｅＶ〜数ＭｅＶの高速イオンビームＢを導入し、成
膜を行っている基板３上の被膜にイオン又は中性粒子を
衝突させて注入，ミキシングすることにより、被膜と基
板３との密着性，被膜の構造，電気特性が良好な被膜が
形成できる。In the above, the inside of the CVD vacuum vessel 21 is brought to 10 -2 to 10 -3 torr or less by the vacuum pump 22, and in that state, appropriate CVD plasma gas is supplied into the vacuum vessel 21 from the plasma generation vessels 30 and 31. When it is done,
A film is formed on the substrate 3 by a low pressure CVD method. A high-speed ion beam B of several KeV to several MeV is introduced from the ion implantation device 26 into the vacuum chamber 1 where this low-pressure CVD film is being formed, and ions or neutral particles are introduced into the film on the substrate 3 where the film is being formed. By colliding, injecting, and mixing, it is possible to form a film with good adhesion between the film and the substrate 3, good film structure, and good electrical properties.
【００２４】またイオンを注入するにおいて、イオン発
生部３５内は１０−４ｔｏｒｒ台以下に保持する必要が
あるが、ＣＶＤ真空容器２１内の圧力が１０−２〜１０
−３ｔｏｒｒと低く、またイオン注入ダクト３９には差
動排気部３３が設けられるため、イオン発生部３５内の
圧力を支障なく保持できる。Furthermore, when implanting ions, it is necessary to maintain the inside of the ion generating section 35 at a pressure of 10 -4 torr or less, but the pressure inside the CVD vacuum chamber 21 must be maintained at 10 -2 to 10 torr.
Since the pressure is as low as -3 torr and the ion implantation duct 39 is provided with the differential exhaust section 33, the pressure inside the ion generation section 35 can be maintained without any problem.
【００２５】[0025]
【発明の効果】以上要するに本発明によれば、基板にＣ
ＶＤ法で成膜を行っている被膜に高速イオンを注入する
ことでＣＶＤによる成膜とイオン注入，イオンミキシン
グを複合化させることができ、高性能の被膜を得ること
ができるという優れた効果を発揮する。Effects of the Invention In summary, according to the present invention, C
By implanting high-speed ions into a film formed by the VD method, it is possible to combine CVD film formation, ion implantation, and ion mixing, resulting in the excellent effect of obtaining a high-performance film. Demonstrate.
【図面の簡単な説明】[Brief explanation of drawings]
【図１】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of the present invention.
【図２】本発明の他の実施例を示す構成図である。FIG. 2 is a configuration diagram showing another embodiment of the present invention.
【図３】従来例を示す概略図である。FIG. 3 is a schematic diagram showing a conventional example.
１，２１ ＣＶＤ真空容器 ３ 基板 ３３ 差動排気部 ６，３４ イオン注入装置 1,21 CVD vacuum container 3 Board 33 Differential exhaust section 6,34 Ion implantation device
Claims (2)
を成膜すると共に差圧調整手段を通してその成膜に高速
イオン注入，イオンミキシングあるいは高速中性粒子を
入射させて成膜することを特徴とするイオン複合化ＣＶ
Ｄ法。[Claim 1] A thin film is formed on a substrate by the CVD method in a low pressure region, and the film is formed by high-speed ion implantation, ion mixing, or injection of high-speed neutral particles through differential pressure adjustment means. Ion complex CV
D method.
Ｄ真空容器と、その真空容器に差動排気部を介して接続
され、ＣＶＤ成膜中の基板上の被膜に高速イオン及び高
速中性粒子を照射するためのイオン注入装置とを備えた
ことを特徴とするイオン複合ＣＶＤ装置。[Claim 2] CV for forming a CVD film on a substrate
D A vacuum chamber and an ion implantation device connected to the vacuum chamber via a differential pumping section for irradiating a film on a substrate during CVD film formation with fast ions and fast neutral particles. Characteristics of ion composite CVD equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8554091A JPH04318168A (en) | 1991-04-17 | 1991-04-17 | Ion composite cvd method and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8554091A JPH04318168A (en) | 1991-04-17 | 1991-04-17 | Ion composite cvd method and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04318168A true JPH04318168A (en) | 1992-11-09 |
Family
ID=13861709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8554091A Pending JPH04318168A (en) | 1991-04-17 | 1991-04-17 | Ion composite cvd method and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04318168A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1593753A2 (en) * | 2004-05-03 | 2005-11-09 | Applied Materials, Inc. | Method for ion implantation |
| US7642180B2 (en) | 2000-08-11 | 2010-01-05 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
-
1991
- 1991-04-17 JP JP8554091A patent/JPH04318168A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7642180B2 (en) | 2000-08-11 | 2010-01-05 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| EP1593753A2 (en) * | 2004-05-03 | 2005-11-09 | Applied Materials, Inc. | Method for ion implantation |
| EP1593753A3 (en) * | 2004-05-03 | 2006-01-18 | Applied Materials, Inc. | Method for ion implantation |
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