JPH04317491A - Cooling cylinder for single crystal pulling-up device - Google Patents
Cooling cylinder for single crystal pulling-up deviceInfo
- Publication number
- JPH04317491A JPH04317491A JP7884391A JP7884391A JPH04317491A JP H04317491 A JPH04317491 A JP H04317491A JP 7884391 A JP7884391 A JP 7884391A JP 7884391 A JP7884391 A JP 7884391A JP H04317491 A JPH04317491 A JP H04317491A
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- cooling
- single crystal
- inner cylinder
- emissivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 50
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 239000000498 cooling water Substances 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011800 void material Substances 0.000 abstract 2
- 230000001174 ascending effect Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101150000971 SUS3 gene Proteins 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、チョクラルスキー法に
よる単結晶引上装置に用いる冷却筒に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling cylinder used in a single crystal pulling apparatus using the Czochralski method.
【０００２】0002
【従来の技術】引上中の単結晶を速やかに冷却するため
に、冷却筒を用いる技術（特開平２−９７４７９号公報
、特開平２−９７４８１号公報等）があるが、従来法で
は、冷却効果が悪く、また冷却筒にＳｉＯが付着し、こ
れが成長して融液中に落下し、単結晶が多結晶化する原
因になることがあった。[Prior Art] In order to quickly cool down the single crystal being pulled, there is a technique using a cooling cylinder (Japanese Patent Laid-Open Nos. 2-97479, 2-97481, etc.), but in the conventional method, The cooling effect was poor, and SiO adhered to the cooling cylinder, which grew and fell into the melt, causing the single crystal to become polycrystalline.
【０００３】0003
【発明が解決しようとする課題】本発明は従来の単結晶
引上装置用冷却筒に改善を加え、さらに、効率のよい単
結晶引上装置用冷却筒を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to improve the conventional cooling cylinder for a single crystal pulling apparatus and to provide a cooling cylinder for a single crystal pulling apparatus that is more efficient.
【０００４】0004
【課題を解決するための手段】本発明は上記実情に鑑み
、単結晶引上装置用冷却筒において、冷却筒を、鏡面加
工した放射率の小さい外筒と、放射率の大きい冷却内筒
との二重構造としたことを特徴とする単結晶引上装置用
冷却筒である。前記冷却内筒の外面に金めっきを施すと
共に、前記外筒との間に空隙を設けるとさらに好適であ
る。[Means for Solving the Problems] In view of the above-mentioned circumstances, the present invention provides a cooling cylinder for a single crystal pulling device, in which the cooling cylinder has a mirror-finished outer cylinder with a low emissivity and an inner cooling cylinder with a high emissivity. This is a cooling cylinder for a single crystal pulling device characterized by having a double structure. It is more preferable that the outer surface of the cooling inner cylinder is plated with gold and that a gap is provided between the cooling inner cylinder and the outer cylinder.
【０００５】[0005]
【作用】本発明では上記構成により、冷却筒の外筒は外
部ヒータからの輻射熱を反射する一方、内筒は引上単結
晶からの輻射熱を効率よく吸熱する。溶融槽から上昇す
るＳｉＯガスは冷却筒に付着することなくＡｒガスと共
に排出される。冷却筒の引上装置内のヒータに面する側
（外筒）を放射率の小さい材料（ＳＵＳ、モリブデン他
を鏡面加工したもの）にし、インゴットに面する側（冷
却内筒）を放射率の大きい材料（Ｃｕ他）にする。鏡面
加工されたＳＵＳ等の放射率は０．１〜０．０１であり
、冷却内筒のＣｕ等は放射率が０．５程度（酸化面）で
ある。冷却内筒は水冷する。冷却筒の引上機内のヒータ
に対向する筒（外筒）と、引上単結晶に対面する筒（冷
却内筒）との間に空隙を設けると共にインゴットに対面
する筒（冷却内筒）の外側に金めっきし反射率を大きく
する。金の放射率は０．０１程度であるから外筒と冷却
内筒との間の放射伝熱量を少なくすることができる。According to the present invention, with the above structure, the outer cylinder of the cooling cylinder reflects the radiant heat from the external heater, while the inner cylinder efficiently absorbs the radiant heat from the pulled single crystal. The SiO gas rising from the melting tank is discharged together with the Ar gas without adhering to the cooling cylinder. The side of the cooling cylinder facing the heater in the pulling device (outer cylinder) is made of a material with low emissivity (SUS, molybdenum, etc. mirror-finished), and the side facing the ingot (cooling inner cylinder) is made of a material with low emissivity. Use a large material (Cu, etc.). The emissivity of mirror-finished SUS or the like is 0.1 to 0.01, and the emissivity of Cu or the like for the cooling inner cylinder is about 0.5 (oxidized surface). The cooling inner cylinder is water cooled. A gap is provided between the cooling cylinder that faces the heater in the pulling machine (outer cylinder) and the cylinder that faces the pulled single crystal (cooling inner cylinder), and the cylinder that faces the ingot (cooling inner cylinder). Gold plated on the outside to increase reflectance. Since the emissivity of gold is about 0.01, the amount of radiant heat transfer between the outer cylinder and the cooling inner cylinder can be reduced.
【０００６】[0006]
【実施例】図１は本発明の実施例のチョクラルスキー単
結晶引上装置の一部を示した。坩堝７内の融液８から単
結晶９を引上げる。単結晶９の周囲には冷却筒１が設け
られヒータ６から単結晶９への輻射を防ぐと共に冷却水
を通水して単結晶９を冷却する。冷却筒１は、ＳＵＳ３
０４の鏡面加工した外筒２と、螺旋状に巻いたＣｕ管か
らなる冷却内筒３との二重構造となっている。冷却内筒
３には冷却水１０を通水した。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a part of a Czochralski single crystal pulling apparatus according to an embodiment of the present invention. A single crystal 9 is pulled up from the melt 8 in the crucible 7. A cooling tube 1 is provided around the single crystal 9 to prevent radiation from the heater 6 to the single crystal 9 and to cool the single crystal 9 by passing cooling water therethrough. Cooling tube 1 is made of SUS3
It has a double structure consisting of an outer cylinder 2 with a mirror finish of 04 and a cooling inner cylinder 3 made of a spirally wound Cu tube. Cooling water 10 was passed through the cooling inner cylinder 3.
【０００７】図２は別の実施例で、符号６〜１０は図１
と同様である。外筒２はＳＵＳ３０４の鏡面加工した筒
とした。冷却内筒４は銅製の水冷二重筒とし、その外径
面に金めっき１１を施すと共に、外筒２との間に空隙５
を設けた。図２に示す冷却筒を用い、原料４５ｋｇ投入
しφ６インチのインゴットを引上製造した。冷却筒を用
いない従来例では引上速度６０ｍｍ／ｈであったが、実
施例ではその約１．５倍の引上速度となった。また冷却
筒を検査した結果、ＳｉＯの付着も認められなかった。FIG. 2 shows another embodiment, and numerals 6 to 10 refer to FIG.
It is similar to The outer cylinder 2 was a mirror-finished SUS304 cylinder. The cooling inner cylinder 4 is a water-cooled double cylinder made of copper, and its outer diameter surface is plated with gold 11, and there is a gap 5 between it and the outer cylinder 2.
has been established. Using the cooling cylinder shown in FIG. 2, 45 kg of raw material was introduced and an ingot with a diameter of 6 inches was pulled. In the conventional example without using a cooling cylinder, the pulling speed was 60 mm/h, but in the example, the pulling speed was about 1.5 times that. Further, as a result of inspecting the cooling cylinder, no adhesion of SiO was observed.
【０００８】[0008]
【発明の効果】本発明の冷却筒は、加熱装置からの輻射
熱を受けることが少なく、単結晶からの抜熱量が大きく
、かつＳｉＯの堆積が少なく引上速度の増大に寄与する
。Effects of the Invention The cooling cylinder of the present invention receives less radiant heat from the heating device, removes a large amount of heat from the single crystal, and deposits less SiO, contributing to an increase in the pulling rate.
【図１】本発明の実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the invention.
【図２】本発明の他の実施例の縦断面図である。FIG. 2 is a longitudinal sectional view of another embodiment of the invention.
１ 冷却筒 ２ 外筒 ３、４ 冷却内筒 ５ 空隙 ６ ヒータ ７ 坩堝 ８ 融液 ９ 引上単結晶 １０ 冷却水 １１ 金めっき 1 Cooling cylinder 2 Outer cylinder 3, 4 Cooling inner cylinder 5 Voids 6 Heater 7 Crucible 8 Melt liquid 9 Pulled single crystal 10 Cooling water 11 Gold plating
Claims (2)
冷却筒は、鏡面加工した放射率の小さい外筒と、放射率
の大きい冷却内筒との二重構造としたことを特徴とする
単結晶引上装置用冷却筒。1. A cooling cylinder for a single crystal pulling device, characterized in that the cooling cylinder has a double structure of a mirror-finished outer cylinder with low emissivity and an inner cooling cylinder with high emissivity. Cooling cylinder for single crystal pulling equipment.
を設けると共に前記冷却内筒の外面に金めっきを施した
ことを特徴とする請求項１記載の単結晶引上装置用冷却
筒。2. The cooling device for a single crystal pulling apparatus according to claim 1, wherein a gap is provided between the outer cylinder and the cooling inner cylinder, and an outer surface of the cooling inner cylinder is plated with gold. Tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7884391A JPH04317491A (en) | 1991-04-11 | 1991-04-11 | Cooling cylinder for single crystal pulling-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7884391A JPH04317491A (en) | 1991-04-11 | 1991-04-11 | Cooling cylinder for single crystal pulling-up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04317491A true JPH04317491A (en) | 1992-11-09 |
Family
ID=13673110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7884391A Withdrawn JPH04317491A (en) | 1991-04-11 | 1991-04-11 | Cooling cylinder for single crystal pulling-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04317491A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000344592A (en) * | 1999-04-01 | 2000-12-12 | Komatsu Electronic Metals Co Ltd | Device and method for producing single crystal ingot |
| KR20020045765A (en) * | 2000-12-11 | 2002-06-20 | 이 창 세 | Growing apparatus of a single crystal ingot |
| KR20030046718A (en) * | 2001-12-06 | 2003-06-18 | 주식회사 실트론 | Growing chamber of silicon ingot having a small diameter |
| US6733585B2 (en) | 2000-02-01 | 2004-05-11 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| JP2005247629A (en) * | 2004-03-04 | 2005-09-15 | Komatsu Electronic Metals Co Ltd | Cooler and ingot manufacturing apparatus |
| JP2013519617A (en) * | 2010-02-12 | 2013-05-30 | エルジー シルトロン インコーポレイテッド | Single crystal cooling apparatus and single crystal growth apparatus including the same |
-
1991
- 1991-04-11 JP JP7884391A patent/JPH04317491A/en not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1182280A4 (en) * | 1999-04-01 | 2008-08-20 | Komatsu Denshi Kinzoku Kk | Device and method for producing single-crystal ingot |
| EP1182280A1 (en) * | 1999-04-01 | 2002-02-27 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Device and method for producing single-crystal ingot |
| JP4498516B2 (en) * | 1999-04-01 | 2010-07-07 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Single crystal ingot manufacturing apparatus and method |
| JP2000344592A (en) * | 1999-04-01 | 2000-12-12 | Komatsu Electronic Metals Co Ltd | Device and method for producing single crystal ingot |
| US7727334B2 (en) | 2000-02-01 | 2010-06-01 | Sumco Techxiv Corporation | Apparatus for pulling single crystal by CZ method |
| US6977010B2 (en) | 2000-02-01 | 2005-12-20 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| US7244309B2 (en) | 2000-02-01 | 2007-07-17 | Sumco Techxiv Corporation | Apparatus for pulling single crystal by CZ method |
| US6733585B2 (en) | 2000-02-01 | 2004-05-11 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| US8002893B2 (en) | 2000-02-01 | 2011-08-23 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| KR20020045765A (en) * | 2000-12-11 | 2002-06-20 | 이 창 세 | Growing apparatus of a single crystal ingot |
| KR20030046718A (en) * | 2001-12-06 | 2003-06-18 | 주식회사 실트론 | Growing chamber of silicon ingot having a small diameter |
| JP2005247629A (en) * | 2004-03-04 | 2005-09-15 | Komatsu Electronic Metals Co Ltd | Cooler and ingot manufacturing apparatus |
| JP4606753B2 (en) * | 2004-03-04 | 2011-01-05 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Cooler and ingot manufacturing equipment |
| JP2013519617A (en) * | 2010-02-12 | 2013-05-30 | エルジー シルトロン インコーポレイテッド | Single crystal cooling apparatus and single crystal growth apparatus including the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980711 |