JPH0431391Y2 - - Google Patents

Info

Publication number
JPH0431391Y2
JPH0431391Y2 JP10820586U JP10820586U JPH0431391Y2 JP H0431391 Y2 JPH0431391 Y2 JP H0431391Y2 JP 10820586 U JP10820586 U JP 10820586U JP 10820586 U JP10820586 U JP 10820586U JP H0431391 Y2 JPH0431391 Y2 JP H0431391Y2
Authority
JP
Japan
Prior art keywords
locking
split ring
small
hole
locking hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10820586U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314723U (instruction
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10820586U priority Critical patent/JPH0431391Y2/ja
Publication of JPS6314723U publication Critical patent/JPS6314723U/ja
Application granted granted Critical
Publication of JPH0431391Y2 publication Critical patent/JPH0431391Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Supports For Pipes And Cables (AREA)
  • Mutual Connection Of Rods And Tubes (AREA)
JP10820586U 1986-07-15 1986-07-15 Expired JPH0431391Y2 (instruction)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10820586U JPH0431391Y2 (instruction) 1986-07-15 1986-07-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10820586U JPH0431391Y2 (instruction) 1986-07-15 1986-07-15

Publications (2)

Publication Number Publication Date
JPS6314723U JPS6314723U (instruction) 1988-01-30
JPH0431391Y2 true JPH0431391Y2 (instruction) 1992-07-28

Family

ID=30985184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10820586U Expired JPH0431391Y2 (instruction) 1986-07-15 1986-07-15

Country Status (1)

Country Link
JP (1) JPH0431391Y2 (instruction)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPS6314723U (instruction) 1988-01-30

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