JPH0431254Y2 - - Google Patents
Info
- Publication number
- JPH0431254Y2 JPH0431254Y2 JP1986064499U JP6449986U JPH0431254Y2 JP H0431254 Y2 JPH0431254 Y2 JP H0431254Y2 JP 1986064499 U JP1986064499 U JP 1986064499U JP 6449986 U JP6449986 U JP 6449986U JP H0431254 Y2 JPH0431254 Y2 JP H0431254Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- crucible
- transparent
- cylindrical body
- transparent quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は、チヨクラルスキー法による半導体用
シリコン単結晶の製造に使用される石英ガラス製
ルツボに関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a quartz glass crucible used for manufacturing silicon single crystals for semiconductors by the Czyochralski method.
（従来の技術とこの問題点）
従来、チヨクラルスキー法による半導体用シリ
コン単結晶の製造においては、第３図に示すよう
な石英ガラスルツボ１に原料となる多結晶シリコ
ンを入れ、外部より加熱融解して単結晶を引き上
げ成長させている。これに使用される石英ガラス
ルツボには、内部に微小な気泡を無数に含み、さ
らに外表面に未溶融結晶層を残存している、通常
半透明石英ガラスと呼ばれる材質のものが主に使
用されていた。このルツボは外表面より内方に向
かつて大部分は半透明石英ガラスであるが、内表
面より外方に向かつて数百ミクロンの厚さ部分に
は、製造方法により必然的に気泡の少ない透明石
英ガラス層が形成されている。(Conventional technology and this problem) Conventionally, in the production of silicon single crystals for semiconductors by the Czyochralski method, raw material polycrystalline silicon is placed in a quartz glass crucible 1 as shown in Figure 3, and heated from the outside. It is melted and pulled to grow a single crystal. The quartz glass crucible used for this purpose is usually made of a material called translucent quartz glass, which contains countless microscopic bubbles inside and has an unmolten crystal layer remaining on its outer surface. was. This crucible is mostly made of translucent quartz glass from the outer surface toward the inside, but from the inner surface toward the outside, a few hundred micrometers thick section is made of transparent glass with few bubbles due to the manufacturing method. A quartz glass layer is formed.
従来のチヨクラルスキー法においては、このよ
うなルツボを使用し、１本目の単結晶を成長させ
た後、さらに原料を追加して２本目以降の単結晶
を続けて成長させる方法を行うことがあり、この
場合には、２本目以降の結晶に転移の発生や不純
物の混入がおこりやすく、そのうえ酸素濃度の分
布が不均一であるなどの問題があつた。 In the conventional Czyochralski method, after growing the first single crystal using such a crucible, it is possible to add raw materials to continue growing the second and subsequent single crystals. In this case, there were problems such as occurrence of dislocation and contamination of impurities in the second and subsequent crystals, and in addition, the distribution of oxygen concentration was non-uniform.
このような問題を誘発する原因は、現在のとこ
ろ、１本目の成長によつてルツボ内表面が融液と
反応して侵食され、２本目以降の成長の際には、
半透明石英ガラス部分が露出するためと推定され
ている。このように半透明部分が露出すると、無
数の開放した気泡のためにルツボと原料融液との
接触面積が増大し、両者の反応が異常に促進さ
れ、この反応でアルカリ金属等の不純物、SiO2
およびSiOが融液中に溶け込み、引上単結晶の品
質が低下する。 At present, the cause of such problems is that the inner surface of the crucible reacts with the melt and erodes during the first growth, and when the second and subsequent growths occur,
It is presumed that this is because the translucent quartz glass part is exposed. When the semi-transparent part is exposed in this way, the contact area between the crucible and the raw material melt increases due to the countless open bubbles, and the reaction between the two is abnormally accelerated. This reaction causes impurities such as alkali metals, SiO 2
and SiO dissolve into the melt, reducing the quality of the pulled single crystal.
さらにルツボと原料のSiとの反応で生成した
SiOが、相対的に温度の低いルツボ上縁内表面に
凝結、析出、成長して落下し、結晶に混入して転
移の原因となる事象も問題となつていた。 Furthermore, the reaction between the crucible and the raw material Si produced
Another problem has been that SiO condenses, precipitates, grows, and falls on the inner surface of the upper edge of the crucible, where the temperature is relatively low, and mixes with the crystal, causing dislocation.
（問題点を解決するための手段と考案の効果）
半透明石英ガラスからなる有底円筒体の内側
に、これより短い透明石英ガラスからなる有底も
しくは非有底の円筒体を嵌合して融着一体化して
成るルツボであつて、該透明石英ガラス円筒体の
上縁をシリコン融液の最高液面より僅かに上側に
位置するように構成させた単結晶引上用石英ガラ
スルツボを要旨とするものである。(Effects of means and ideas for solving problems) A shorter cylindrical body made of transparent quartz glass with a bottom or without a bottom is fitted inside a cylindrical body with a bottom made of semi-transparent quartz glass. Summary of a quartz glass crucible for pulling a single crystal, which is an integrated fused crucible, and is configured such that the upper edge of the transparent quartz glass cylinder is located slightly above the highest liquid level of silicon melt. That is.
以下に本考案を図面によつて説明する。 The present invention will be explained below with reference to the drawings.
第１図に示す本考案のルツボにおいて、外側有
底円筒体２を形成する半透明石英ガラスとして
は、天然石英ガラスが使用される。このガラス
は、内部に無数の気泡を含んでいるので、ルツボ
の均熱性が高く保たれる。 In the crucible of the present invention shown in FIG. 1, natural quartz glass is used as the translucent quartz glass forming the outer bottomed cylindrical body 2. Since this glass contains countless air bubbles inside, the crucible maintains a high level of thermal uniformity.
内側有底円筒体３は外側有底円筒体２に密着嵌
合して加熱一体化されるが、円筒体３を形成する
透明石英ガラスとしては、アルカリ金属等の不純
物を実質的に全く含まず均一な材質の合成石英ガ
ラスが用いられる。このガラスは気泡を含まない
ので、前記の従来ルツボ１の場合のように異常に
早く融液に侵食されることはない。したがつてこ
の透明石英ガラスよりなる有底円筒体３の壁を
0.2〜５mmの肉厚とすることにより、従来より格
段に長期にわたり、不純物が少なく、均一な酸素
濃度をもつ高品質のシリコン単結晶を引き上げる
ことができる。その引上用融液の最高液面は、ル
ツボの大きさによつて異なるが、通常ルツボの上
縁より10〜50mm下側の位置にあり、本考案のルツ
ボにおいては、シリコン融液が外側の半透明石英
ガラスに接触しないように内側の透明石英ガラス
製円筒体３の上縁をその融液最高液面より僅かに
上側に位置するように構成させることが重要であ
る。本考案は、円筒体３の上端縁より上側を外側
の半透明石英ガラス円筒体単独の薄肉層で形成さ
せるとき、従来のルツボでは実質的に回避できな
かつた単結晶引き上げ操作の間に形成されるガス
状一酸化けい素（SiO）のルツボの上部内壁への
凝縮が効果的に防止できることの発見に基づいて
いる。ルツボの上部内壁に凝縮した一酸化けい素
は、ルツボ内へ落下して溶融シリコンを汚染し、
引き上げられるシリコン単結晶内の転移を発生さ
せるという不利益がもたらされるのであつて、ル
ツボ自体の上端部の微妙な構成の差がそのような
不都合を効果的に解消し得ることは全く以外なこ
とであつた。本考案のルツボが、かかる顕著に優
れた作用効果を奏する理由は明らかではないが、
外部熱源からの熱がルツボの上部内壁に、上昇す
るガス状一酸化けい素の凝縮を排除し得る微妙な
温度条件をつくり出しているものと推定される。
また内側有底筒状体は、第２図に示すように、非
有底円筒体４であつてもよい。 The inner bottomed cylindrical body 3 is closely fitted to the outer bottomed cylindrical body 2 and heated and integrated, but the transparent quartz glass forming the cylindrical body 3 does not contain substantially any impurities such as alkali metals. Synthetic quartz glass, which is a uniform material, is used. Since this glass does not contain air bubbles, it will not be eroded by the melt abnormally quickly as in the case of the conventional crucible 1 described above. Therefore, the wall of the bottomed cylindrical body 3 made of transparent quartz glass
By setting the thickness to 0.2 to 5 mm, high quality silicon single crystals with less impurities and a uniform oxygen concentration can be pulled for a much longer period of time than conventionally. The highest liquid level of the pulling melt varies depending on the size of the crucible, but is usually located 10 to 50 mm below the upper edge of the crucible. It is important that the upper edge of the inner transparent quartz glass cylinder 3 is positioned slightly above the highest melt level so as not to come into contact with the translucent quartz glass. In the present invention, when forming a thin layer of the outer semitransparent quartz glass cylinder above the upper edge of the cylinder 3, the formation is achieved during a single crystal pulling operation that could not be avoided in a conventional crucible. It is based on the discovery that condensation of gaseous silicon monoxide (SiO) on the upper inner wall of the crucible can be effectively prevented. Silicon monoxide condensed on the upper inner wall of the crucible falls into the crucible and contaminates the molten silicon.
This brings about the disadvantage of generating dislocations within the silicon single crystal being pulled, and it is completely out of the question that such a disadvantage can be effectively eliminated by subtle differences in the structure of the upper end of the crucible itself. It was hot. Although it is not clear why the crucible of the present invention exhibits such outstanding effects,
It is assumed that the heat from the external heat source creates delicate temperature conditions on the upper inner wall of the crucible that can preclude condensation of the rising gaseous silicon monoxide.
Further, the inner bottomed cylindrical body may be a non-bottomed cylindrical body 4, as shown in FIG.
第１，２図はそれぞれ本考案を例示する単結晶
引上用石英ガラスルツボの断面図を、第３図は従
来のルツボの断面図を示す。
１……石英ガラスルツボ、２……外側有底円筒
体、３，４……内側有底円筒体。
1 and 2 are cross-sectional views of a quartz glass crucible for pulling single crystals illustrating the present invention, and FIG. 3 is a cross-sectional view of a conventional crucible. 1... Quartz glass crucible, 2... Outer bottomed cylindrical body, 3, 4... Inner bottomed cylindrical body.
Claims (1)
に、これより短い透明石英ガラスからなる有底
もしくは非有底の円筒体を嵌合して融着一体化
して成るルツボであつて、該透明石英ガラス円
筒体の上縁をシリコン融液の最高液面より僅か
に上側に位置するように構成させたことを特徴
とする単結晶引上用石英ガラスルツボ。 ２ 前記半透明石英ガラスが天然石英ガラスより
なり、透明石英ガラスが剛性石英ガラスよりな
る実用新案登録請求の範囲第１項記載の石英ガ
ラスルツボ。 ３ 前記透明石英ガラス層の厚さが0.2〜５mmで
あることを特徴とする実用新案登録請求の範囲
第１項記載の石英ガラスルツボ。 ４ 前記透明石英ガラス層が、ルツボ上縁より10
〜50mmの部分より下方へ形成されていることを
特徴とする実用新案登録請求の範囲第１項記載
の石英ガラスルツボ。[Scope of Claim for Utility Model Registration] 1 A shorter cylindrical body made of transparent quartz glass with a bottom or without a bottom is fitted inside a cylindrical body with a bottom made of semi-transparent quartz glass and fused and integrated. A quartz glass crucible for pulling a single crystal, characterized in that the upper edge of the transparent quartz glass cylinder is positioned slightly above the highest liquid level of a silicon melt. 2. The quartz glass crucible according to claim 1, wherein the translucent quartz glass is made of natural quartz glass, and the transparent quartz glass is made of rigid quartz glass. 3. The quartz glass crucible according to claim 1, wherein the transparent quartz glass layer has a thickness of 0.2 to 5 mm. 4 The transparent quartz glass layer extends 10 mm from the upper edge of the crucible.
The quartz glass crucible according to claim 1, characterized in that the crucible is formed downward from a portion of ~50 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986064499U JPH0431254Y2 (en) | 1986-04-28 | 1986-04-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986064499U JPH0431254Y2 (en) | 1986-04-28 | 1986-04-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62175077U JPS62175077U (en) | 1987-11-06 |
| JPH0431254Y2 true JPH0431254Y2 (en) | 1992-07-28 |
Family
ID=30900710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986064499U Expired JPH0431254Y2 (en) | 1986-04-28 | 1986-04-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0431254Y2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729871B2 (en) * | 1987-12-03 | 1995-04-05 | 信越半導体 株式会社 | Quartz crucible for pulling single crystals |
| JP2003081689A (en) * | 2001-09-10 | 2003-03-19 | Kusuwa Kuorutsu:Kk | Synthetic quartz crucible and method of producing the same |
| JP5121760B2 (en) * | 2009-03-16 | 2013-01-16 | ジャパンスーパークォーツ株式会社 | Method of pulling a silicon single crystal |
| JP5289293B2 (en) * | 2009-12-14 | 2013-09-11 | 株式会社Ｓｕｍｃｏ | Quartz crucible for single crystal pulling |
| JP5289294B2 (en) * | 2009-12-14 | 2013-09-11 | 株式会社Ｓｕｍｃｏ | Quartz crucible for pulling silicon single crystal |
| JP5685894B2 (en) * | 2010-11-05 | 2015-03-18 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP5741163B2 (en) * | 2011-04-11 | 2015-07-01 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP5488519B2 (en) * | 2011-04-11 | 2014-05-14 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP5668717B2 (en) * | 2012-04-19 | 2015-02-12 | 信越半導体株式会社 | Method for producing silicon single crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213697A (en) * | 1983-05-20 | 1984-12-03 | Toshiba Ceramics Co Ltd | Pulling device for single crystal semiconductor |
-
1986
- 1986-04-28 JP JP1986064499U patent/JPH0431254Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213697A (en) * | 1983-05-20 | 1984-12-03 | Toshiba Ceramics Co Ltd | Pulling device for single crystal semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62175077U (en) | 1987-11-06 |
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