JP2923720B2 - Quartz crucible for pulling silicon single crystal - Google Patents
Quartz crucible for pulling silicon single crystalInfo
- Publication number
- JP2923720B2 JP2923720B2 JP4358254A JP35825492A JP2923720B2 JP 2923720 B2 JP2923720 B2 JP 2923720B2 JP 4358254 A JP4358254 A JP 4358254A JP 35825492 A JP35825492 A JP 35825492A JP 2923720 B2 JP2923720 B2 JP 2923720B2
- Authority
- JP
- Japan
- Prior art keywords
- bubble content
- glass layer
- crucible
- transparent glass
- quartz crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、多結晶シリコンを溶融
して単結晶シリコンを製造する際に用いられる石英ルツ
ボであって、単結晶化歩留りの良い石英ルツボに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz crucible used for producing polycrystalline silicon by melting polycrystalline silicon and having a good single-crystal yield.
【０００２】[0002]
【従来技術とその課題】半導体用シリコン単結晶は、現
在、主にチョクラルスキー法（ＣＺ法）により製造され
ている。該ＣＺ法では、多結晶シリコンを石英ルツボ内
部に充填し、約１４５０℃に加熱溶融して該溶融シリコ
ンからシリコン単結晶を引き上げる。この場合、使用す
るルツボの壁体（周壁及び底壁）中に気泡が存在する
と、上記加熱の際に該内部気泡が熱膨張してルツボ内表
面を部分的に剥離させる。剥離した石英小片が単結晶に
混入すると、製造されるシリコンの単結晶化歩留りが低
下する。そこで、従来、ルツボ壁体中の内部気泡を減少
することが試みられ、肉眼では殆ど内部に気泡が観察さ
れない石英ルツボが開発されている。しかしながら、こ
の種のルツボは、ルツボ壁体全体の平均気泡含有率は小
さいものの、ルツボ内表面付近に微小な気泡（マイクロ
バブル）が偏在しており、ルツボの加熱時に、該微小気
泡が熱膨張して前述と同様の問題が生じる。このため、
ルツボ内表面付近に内在する微小気泡を減少させること
によって単結晶化率を高めた石英ルツボが提案されてい
る。例えば、特公平１−１９７３８２号公報では、ルツ
ボ壁体の内周側部分の気泡含有率を０. １％以下に制御
することによって約７５％の単結晶化率が達成されてい
る。2. Description of the Related Art At present, silicon single crystals for semiconductors are mainly manufactured by the Czochralski method (CZ method). In the CZ method, polycrystalline silicon is filled in a quartz crucible, heated and melted at about 1450 ° C., and a silicon single crystal is pulled up from the molten silicon. In this case, if air bubbles are present in the wall (peripheral wall and bottom wall) of the crucible to be used, the internal air bubbles are thermally expanded at the time of the heating, and the inner surface of the crucible is partially peeled. When the exfoliated quartz pieces are mixed in the single crystal, the yield of single crystal to be produced of the silicon decreases. Therefore, conventionally, attempts have been made to reduce the internal bubbles in the crucible wall, and a quartz crucible in which bubbles are hardly observed inside with the naked eye has been developed. However, in this type of crucible, although the average bubble content of the entire crucible wall is small, minute bubbles (micro bubbles) are unevenly distributed near the inner surface of the crucible. As a result, the same problem as described above occurs. For this reason,
A quartz crucible has been proposed in which the rate of single crystallization is increased by reducing microbubbles existing near the inner surface of the crucible. For example, in Japanese Patent Publication No. 1-197382, a single crystallization ratio of about 75% is achieved by controlling the bubble content in the inner peripheral portion of the crucible wall to 0.1% or less.
【０００３】[0003]
【発明の解決課題】こような観点から、単結晶化率をさ
らに向上させるには、石英ルツボ内表面の気泡含有率を
さらに低減することが考えられる。しかし、石英ルツボ
の内表面全域にわたって気泡含有率を減少させるのは製
造コストの大幅な上昇を招き、製造装置の構造や制御の
複雑化が避けられない。このため、より経済的な方法で
製造され得る高単結晶化歩留りの石英ルツボが求められ
ていた。本発明は従来の上記課題を解決したシリコン単
結晶引上げ用石英ルツボを提供することを目的とする。From such a viewpoint, in order to further improve the single crystallization ratio, it is conceivable to further reduce the bubble content on the inner surface of the quartz crucible. However, reducing the bubble content over the entire inner surface of the quartz crucible causes a significant increase in manufacturing cost, and inevitably complicates the structure and control of the manufacturing apparatus. Therefore, there has been a demand for a quartz crucible having a high single crystallization yield that can be manufactured by a more economical method. An object of the present invention is to provide a quartz crucible for pulling a silicon single crystal which solves the above-mentioned conventional problems.
【０００４】[0004]
【課題の解決手段】シリコン単結晶引上げ用石英ルツボ
の上記問題点について検討した結果、関液ルツボの周壁
部分の気泡含有率よりも底面部分の気泡含有率がシリコ
ン単結晶の単結晶化率に大きな影響を与えることが判明
した。本発明はこの知見に基づき、石英ルツボの底面部
分の気泡含有率を重点的に低減することによって単結晶
化率を格段に向上させたものである。As a result of examining the above problems of the quartz crucible for pulling a silicon single crystal, the bubble content of the bottom portion of the quartz crucible is lower than the bubble content of the peripheral wall portion of the single crystal crucible. It has been found to have a significant effect. Based on this finding, the present invention has significantly improved the single crystallization rate by mainly reducing the bubble content in the bottom portion of the quartz crucible.
【０００５】[0005]
【発明の構成】本発明によれば以下のシリコン単結晶引
上げ用石英ルツボが提供される。 (1) 内表面に厚さ１mm以上の透明ガラス層を有し、内
周面部分の透明ガラス層の気泡含有率が０．５％以下で
あり、底面部分の透明ガラス層の気泡含有率が０．０１
％以下であるシリコン単結晶引上げ用石英ルツボ。 (2) 内周面部分の透明ガラス層の気泡含有率が０．５％
以下、内周面部分から底面部分に至る湾曲部分の透明ガ
ラス層の気泡含有率が０．１％以下、底面部分の透明ガ
ラス層の気泡含有率が０．０１％以下である上記石英ル
ツボ。 (3) 底面中心より半径の２／３以内の領域における透明
ガラス層の気泡含有率が０. ０１％以下であり、底面中
心より半径の２／３から半径の５／６に至る領域におけ
る透明ガラス層の気泡含有率が０. １％以下である上記
石英ルツボ。According to the present invention, the following quartz crucible for pulling a silicon single crystal is provided. (1) A transparent glass layer having a thickness of 1 mm or more on the inner surface, the bubble content of the transparent glass layer on the inner peripheral surface is 0.5% or less, and the bubble content of the transparent glass layer on the bottom surface is less than 0.5%. 0.01
% Or less for pulling a silicon single crystal. (2) The bubble content of the transparent glass layer on the inner peripheral surface is 0.5%
The quartz crucible according to the above, wherein the bubble content of the transparent glass layer at the curved portion from the inner peripheral surface portion to the bottom portion is 0.1% or less, and the bubble content of the transparent glass layer at the bottom portion is 0.01% or less. (3) The transparent glass layer has a bubble content of 0.01% or less in a region within 2/3 of the radius from the center of the bottom surface, and is transparent in a region extending from 2/3 of the radius to 5/6 of the radius from the center of the bottom surface. The above quartz crucible, wherein the glass layer has a bubble content of 0.1% or less.
【０００６】以下、図面を参照して本発明を詳細に説明
する。本発明の石英ルツボ１０は、図示するように、内
表面に厚さ１mm以上の透明ガラス層１１を有し、その立
設する内周面部分２０の透明ガラス層１１の気泡含有率
が０．５％以下であり、さらに底面部分３０の透明ガラ
ス層１１の気泡含有率が０．０１％以下である。また好
ましくは、該内周面部分から底面部分に至る湾曲部分４
０の透明ガラス層の気泡含有率が０．１％以下である。
なお、ここで気泡含有率とは、石英ルツボの一定面積(W
1)に対する気泡占有面積(W2)の比(W2/W2) をいう。ここ
で定義した気泡含有率は、光学的な検出手段を用いて非
破壊的に測定することができる。表面から一定深さに至
るまでの気泡含有率を測定するには、検出手段の焦点を
表面から深さ方向に走査すればよい。このような非破壊
的気泡含有率測定法は、例えば、特願平１−２２１５６
７号に詳述されている。Hereinafter, the present invention will be described in detail with reference to the drawings. As shown in the drawing, the quartz crucible 10 of the present invention has a transparent glass layer 11 having a thickness of 1 mm or more on its inner surface, and the bubble content of the transparent glass layer 11 of the inner peripheral surface portion 20 on which it stands is 0.1 mm. 5% or less, and the bubble content of the transparent glass layer 11 on the bottom surface portion 30 is 0.01% or less. Preferably, the curved portion 4 extending from the inner peripheral surface portion to the bottom surface portion is preferably used.
The transparent glass layer of No. 0 has a bubble content of 0.1% or less.
Here, the bubble content refers to a fixed area (W
The ratio (W2 / W2) of the bubble occupation area (W2) to 1). The bubble content defined herein can be measured non-destructively using optical detection means. In order to measure the bubble content from the surface to a certain depth, the focus of the detecting means may be scanned from the surface in the depth direction. Such a nondestructive bubble content measuring method is described in, for example, Japanese Patent Application No. 1-222156.
No. 7 describes in detail.
【０００７】シリコン単結晶の引上げでは、通常、石英
ルツボの内表面が内部に溜まっている溶融シリコンによ
って０. １〜０. ５mm程度溶損する。従って、この内表
面部分に気泡が存在するとルツボ内表面が剥離し、シリ
コン単結晶を引上げる際にその単結晶化を妨げる。そこ
で本発明では、石英ルツボ１０の基本的な構造として、
まずルツボ内表面全体を層厚１mm以上の透明なガラス層
１１によって形成し、両側周囲の内周面部分２０の気泡
含有率を０．５％以下に制限する。一般にガラス層中の
気泡含有量が増えるとガラス層が白濁して透明性を失
う。内周面部分を気泡含有率０．５％以下の透明ガラス
層とすれば上記問題をかなりの程度防止することができ
る。In pulling a silicon single crystal, the inner surface of the quartz crucible is usually melted by about 0.1 to 0.5 mm by molten silicon accumulated inside. Therefore, if air bubbles are present in the inner surface portion, the inner surface of the crucible is peeled off, which hinders the single crystallization of the silicon single crystal when it is pulled. Therefore, in the present invention, as a basic structure of the quartz crucible 10,
First, the entire inner surface of the crucible is formed by a transparent glass layer 11 having a layer thickness of 1 mm or more, and the bubble content of the inner peripheral surface portion 20 on both sides is limited to 0.5% or less. Generally, when the bubble content in the glass layer increases, the glass layer becomes cloudy and loses transparency. If the inner peripheral surface is made of a transparent glass layer having a bubble content of 0.5% or less, the above problem can be prevented to a considerable extent.
【０００８】さらに本発明の石英ルツボは、底面部分３
０の透明ガラス層１１の気泡含有率が０．０１％以下に
制限される。なお、好適な態様として、該内周面部分２
０から底面部分３０に至る湾曲部分４０の透明ガラス層
１１の気泡含有率を０．１％以下とし、底面部分３０の
透明ガラス層１１の気泡含有率を０．０１％以下に段階
的に制限しても良い。ここで上記底面部分３０とは、具
体的には、底面中心より半径の２／３以内の範囲であ
り、また内周面部分から底面部分に至る湾曲部分とは、
底面中心より半径の２／３から半径の５／６に至る範囲
とすれば良い。上記範囲３０、４０の気泡含有率を各々
０．１以下および０．０１以下に制限することによって
単結晶化歩留りが８０〜９０％以上まで改善される。Further, the quartz crucible of the present invention has a bottom portion 3
The bubble content of the transparent glass layer 11 of 0 is limited to 0.01% or less. In a preferred embodiment, the inner peripheral surface portion 2
The bubble content of the transparent glass layer 11 of the curved portion 40 extending from 0 to the bottom portion 30 is set to 0.1% or less, and the bubble content of the transparent glass layer 11 of the bottom portion 30 is limited stepwise to 0.01% or less. You may. Here, the bottom surface portion 30 is, specifically, a range within ２ of the radius from the center of the bottom surface, and a curved portion from the inner peripheral surface portion to the bottom surface portion.
The range may be from 2/3 of the radius to 5/6 of the radius from the bottom center. By limiting the bubble content in the above ranges 30 and 40 to 0.1 or less and 0.01 or less, respectively, the single crystallization yield is improved to 80 to 90% or more.
【０００９】本発明の石英ルツボは、回転モールディン
グ法により製造することができる。具体的には、底面部
分を段階的に加熱することによって得られる。即ち、回
転モールディング法において、原料の石英粉末を回転す
るモールド内周面に充填した後に、石英粉体の内表面全
体を加熱溶融し、さらに熱源を底部中心部に向かって降
ろして加熱し、脱気する。加熱時間や加熱温度、脱気時
の真空度等の具体的条件は原料の石英粉末、ルツボの口
径などの製造条件に応じて適宜定められる。The quartz crucible of the present invention can be manufactured by a rotary molding method. Specifically, it is obtained by heating the bottom portion stepwise. That is, in the rotary molding method, after the quartz powder as a raw material is filled into the inner peripheral surface of the rotating mold, the entire inner surface of the quartz powder is heated and melted, and the heat source is further lowered toward the center of the bottom and heated to remove the heat. I care. Specific conditions such as the heating time, the heating temperature, and the degree of vacuum at the time of degassing are appropriately determined according to the production conditions such as the raw material quartz powder and the diameter of the crucible.
【００１０】[0010]
【実施例１】口径16インチ のルツボ製造用モールドに石英
粉を充填後、モールドの中心軸上、底面より400mm 上方
（モールド上端面と同一レベル）の位置にアーク電極先
端部を設定し、200kW の電力で５分間通電して石英粉を
溶融した。次いで電極を200mm降下し、同じ電力で８分
間通電して底部中央部の石英を重点的に加熱し、通電中
にモールド側より６分間減圧して内面に透明ガラス層を
形成した。得られた石英ルツボについて気泡含有量を測
定した。また、この石英ルツボを用いてシリコン単結晶
の引上げを行なった。この結果を表１に示す。[Example 1] After filling a quartz powder into a mold for producing a crucible having a diameter of 16 inches, the tip of the arc electrode was set at a position 400 mm above the center axis of the mold and above the bottom surface (at the same level as the top end surface of the mold), and 200 kW For 5 minutes to melt the quartz powder. Next, the electrode was lowered by 200 mm and energized with the same power for 8 minutes to heat the quartz at the bottom center partly, and reduced the pressure from the mold side for 6 minutes during energization to form a transparent glass layer on the inner surface. About the obtained quartz crucible, the bubble content was measured. Further, a silicon single crystal was pulled using this quartz crucible. Table 1 shows the results.
【００１１】[0011]
【実施例２〜５】実施例１と同様にして、３種類の石英
ルツボを製造し、気泡含有量及びこれらのルツボをシリ
コン単結晶引上げに用いた場合の単結晶化歩留りを測定
した。結果を表１に示す。Examples 2 to 5 Three types of quartz crucibles were manufactured in the same manner as in Example 1, and the content of bubbles and the yield of single crystallization when these crucibles were used for pulling a silicon single crystal were measured. Table 1 shows the results.
【００１２】[0012]
【比較例１】口径16インチ ルツボ製造用モールドに石英粉
を充填後、モールドの中心軸上、底面より400 mm上方
（モールド上端面と同一レベル）の位置にアーク電極先
端部を設定し、300 kWの電力で１５分間通電して石英粉
を溶融し、通電中にモールド側より５分間減圧して内面
に透明ガラス層を形成した。得られた石英ルツボについ
て気泡含有量を測定した。また、この石英ルツボを用い
てシリコン単結晶の引上げを行なった。この結果を表１
に示す。[Comparative Example 1] After filling a quartz powder into a mold for producing a 16-inch crucible with quartz powder, set the tip of the arc electrode at a position 400 mm above the bottom axis on the center axis of the mold (at the same level as the top end face of the mold). The quartz powder was melted by supplying electricity for 15 minutes with a power of kW, and the pressure was reduced from the mold side for 5 minutes during the supply of electricity to form a transparent glass layer on the inner surface. About the obtained quartz crucible, the bubble content was measured. Further, a silicon single crystal was pulled using this quartz crucible. Table 1 shows the results.
Shown in
【比較例２】比較例１と同様にして石英ルツボを製造
し、気泡含有量及びこれらのルツボをシリコン単結晶引
上げに用いた場合の単結晶化歩留りを測定した。結果を
表１に示す。Comparative Example 2 Quartz crucibles were manufactured in the same manner as in Comparative Example 1, and the content of bubbles and the yield of single crystallization when these crucibles were used for pulling a silicon single crystal were measured. Table 1 shows the results.
【００１３】[0013]
【表１】 石英ルツボの底面部分、湾曲部分、内周部分の気泡含有率(%) と単結晶化率(%) 試料 底面部分 湾曲部分 内周部分 単結晶化率(%) 実施例１ 0.01 0.01 0.01 91 ２ 0.005 0.10 0.10 92 ３ 0.01 0.05 0.05 91 ４ 0.01 0.10 0.50 91 比較例１ 0.02 0.02 0.02 84 ２ 0.01 0.15 0.15 86 （注）底面部分は底面中心から半径の2/3 以内の範囲 湾曲部分は底面中心から半径の2/3 から5/6 の範囲Table 1 Bubble content (%) and single crystallization rate (%) of bottom, curved, and inner peripheral parts of quartz crucible Sample bottom part Curved part Inner peripheral part Single crystallization rate (%) Example 1 0.01 0.01 0.01 91 2 0.005 0.10 0.10 92 3 0.01 0.05 0.05 91 4 0.01 0.10 0.50 91 Comparative Example 1 0.02 0.02 0.02 84 2 0.01 0.15 0.15 86 (Note) The bottom part is within 2/3 of the radius from the bottom center. Range from 2/3 to 5/6 of the radius from the bottom center
【００１４】上記結果に示されるように、内表面全体を
平均して見た場合、例えば、比較例１のルツボは、実施
例４のルツボよりも気泡含有率が低いが、比較例１の単
結晶化率は８４％であるのに対して実施例４では９０％
を上回る単結晶化率が達成されており、本発明において
優れた効果が得られることが判る。他の実施例において
も、本発明の石英ルツボを使用した場合にはいずれも９
０％以上の単結晶化歩留りが示され、その効果は顕著で
ある。As shown by the above results, when the entire inner surface is averaged, for example, the crucible of Comparative Example 1 has a lower bubble content than the crucible of Example 4, but the crucible of Comparative Example 1 has The crystallization ratio is 84%, while that of Example 4 is 90%
Thus, it can be seen that a single crystallization ratio exceeding 0.1% was achieved, and excellent effects were obtained in the present invention. In the other examples, when the quartz crucible of the present invention was used, all of
A single crystallization yield of 0% or more is shown, and the effect is remarkable.
【００１５】[0015]
【発明の効果】本発明の石英ルツボを使用した場合、単
結晶化率が９０％を超える優れた効果を得ることができ
る。しかも、本発明のルツボの製造に際しては、ルツボ
底部中央部分を重点的に加熱して減圧脱気すればよいの
で、従来考えられていたようなルツボ全体について気泡
含有率を減少させる必要はなく、製造装置やその制御が
簡略である。従って、製造が容易であり、また製造コス
トの点で経済的に有利である。When the quartz crucible of the present invention is used, an excellent effect with a single crystallization ratio exceeding 90% can be obtained. Moreover, in the production of the crucible of the present invention, it is only necessary to heat the crucible bottom center part by focusing and degassing under reduced pressure, so it is not necessary to reduce the bubble content for the whole crucible as conventionally considered, The manufacturing apparatus and its control are simple. Therefore, it is easy to manufacture and economically advantageous in terms of manufacturing cost.
【図１】 本発明に係る石英ルツボの中央から側壁にか
けての概略断面図FIG. 1 is a schematic sectional view from the center to the side wall of a quartz crucible according to the present invention.
１０−石英ルツボ、１１−透明ガラス層、２０−内周面
部分 ３０−底面部分、４０−湾曲部分10-quartz crucible, 11-transparent glass layer, 20-inner peripheral portion 30-bottom portion, 40-curved portion
Claims (3)
有し、内周面部分の透明ガラス層の気泡含有率が０．５
％以下であり、底面部分の透明ガラス層の気泡含有率が
０．０１％以下であるシリコン単結晶引上げ用石英ルツ
ボ。1. A transparent glass layer having a thickness of 1 mm or more on the inner surface, wherein the bubble content of the transparent glass layer on the inner peripheral surface is 0.5%.
% Or less, and a quartz crucible for pulling a silicon single crystal, wherein the bubble content of the transparent glass layer on the bottom portion is 0.01% or less.
が０．５％以下、内周面部分から底面部分に至る湾曲部
分の透明ガラス層の気泡含有率が０．１％以下、底面部
分の透明ガラス層の気泡含有率が０．０１％以下である
請求項１の石英ルツボ。2. The bubble content of the transparent glass layer in the inner peripheral portion is 0.5% or less, and the bubble content of the transparent glass layer in the curved portion from the inner peripheral portion to the bottom portion is 0.1% or less. 2. The quartz crucible according to claim 1, wherein the bubble content of the transparent glass layer at the bottom portion is 0.01% or less.
おける透明ガラス層の気泡含有率が０. ０１％以下であ
り、底面中心より半径の２／３から半径の５／６に至る
領域における透明ガラス層の気泡含有率が０. １％以下
である請求項１の石英ルツボ。3. A region in which the bubble content of the transparent glass layer is 0.01% or less in a region within 2/3 of the radius from the center of the bottom surface, and ranges from 2/3 of the radius to 5/6 of the radius from the center of the bottom surface. 2. The quartz crucible according to claim 1, wherein the bubble content of the transparent glass layer is 0.1% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4358254A JP2923720B2 (en) | 1992-12-26 | 1992-12-26 | Quartz crucible for pulling silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4358254A JP2923720B2 (en) | 1992-12-26 | 1992-12-26 | Quartz crucible for pulling silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06191986A JPH06191986A (en) | 1994-07-12 |
| JP2923720B2 true JP2923720B2 (en) | 1999-07-26 |
Family
ID=18458337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4358254A Expired - Lifetime JP2923720B2 (en) | 1992-12-26 | 1992-12-26 | Quartz crucible for pulling silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2923720B2 (en) |
Cited By (1)
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|---|---|---|---|---|
| WO2009054529A1 (en) | 2007-10-25 | 2009-04-30 | Japan Super Quartz Corporation | Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5121226B2 (en) * | 2006-12-27 | 2013-01-16 | ジャパンスーパークォーツ株式会社 | Method for producing quartz glass crucible |
| JP4671999B2 (en) * | 2007-11-30 | 2011-04-20 | ジャパンスーパークォーツ株式会社 | Test method for quartz glass crucible |
| KR101156965B1 (en) * | 2008-07-03 | 2012-06-20 | 쟈판 스파 쿼츠 가부시키가이샤 | Method for producing vitreous silica crucible, vitreous silica crucible produced thereby and producing apparatus thereof |
| EP2141130B1 (en) | 2008-07-04 | 2011-09-28 | Japan Super Quartz Corporation | Method for producing vitreous silica crucible |
| US8286447B2 (en) | 2008-07-09 | 2012-10-16 | Japan Super Quartz Corporation | Method for producing quartz glass crucible |
| EP2143692A1 (en) | 2008-07-10 | 2010-01-13 | Japan Super Quartz Corporation | Method for producing quartz glass crucible |
| JP5069663B2 (en) | 2008-10-31 | 2012-11-07 | ジャパンスーパークォーツ株式会社 | Quartz glass crucible with multilayer structure |
| JP4987029B2 (en) | 2009-04-02 | 2012-07-25 | ジャパンスーパークォーツ株式会社 | Silica glass crucible for pulling silicon single crystals |
| JP5397857B2 (en) | 2009-10-20 | 2014-01-22 | 株式会社Ｓｕｍｃｏ | Method and apparatus for producing quartz glass crucible |
| JP5500687B2 (en) | 2010-12-02 | 2014-05-21 | 株式会社Ｓｕｍｃｏ | Method and apparatus for producing silica glass crucible |
| CN103113016B (en) * | 2013-01-31 | 2015-05-20 | 成都尤利特光电科技有限公司 | Quartz crucible for founding lanthanide series optical glass and method for founding lanthanide series optical glass slag clinker |
| JP6922982B2 (en) | 2017-07-04 | 2021-08-18 | 株式会社Sumco | Quartz glass crucible |
-
1992
- 1992-12-26 JP JP4358254A patent/JP2923720B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009054529A1 (en) | 2007-10-25 | 2009-04-30 | Japan Super Quartz Corporation | Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06191986A (en) | 1994-07-12 |
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