JPH04305158A - Magnetic rotation detector - Google Patents
Magnetic rotation detectorInfo
- Publication number
- JPH04305158A JPH04305158A JP3069683A JP6968391A JPH04305158A JP H04305158 A JPH04305158 A JP H04305158A JP 3069683 A JP3069683 A JP 3069683A JP 6968391 A JP6968391 A JP 6968391A JP H04305158 A JPH04305158 A JP H04305158A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic flux
- magnetic
- poles
- detection part
- magnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 230000004907 flux Effects 0.000 claims abstract description 37
- 230000035699 permeability Effects 0.000 claims abstract description 9
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 15
- 230000005405 multipole Effects 0.000 abstract description 3
- 230000004304 visual acuity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000005415 magnetization Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- -1 manganese-aluminum Chemical compound 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】この発明は磁気式回転速度検出装
置に係り、特に高分解能を有する検出素子構造を備えた
新規な磁気式回転速度検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic rotation speed detection device, and more particularly to a novel magnetic rotation speed detection device equipped with a detection element structure having high resolution.
【0002】0002
【従来の技術】従来の磁気式回転速度検出装置は、特開
昭62−235523号公報及び特開昭62−2188
16号公報に開示されており、例えば図6に示すように
多極着磁磁石51を備える回転体52と多極着磁磁石5
1からのもれ磁束を検出する磁束検出手段53を回転体
52の軸方向とほぼ平行に配置し、多極着磁磁石51の
回転により交番的に変化する前記もれ磁束を検出する技
術である。[Prior Art] Conventional magnetic rotational speed detection devices are disclosed in Japanese Patent Laid-Open No. 62-235523 and Japanese Patent Laid-open No. 62-2188.
For example, as shown in FIG. 6, a rotating body 52 including a multipolar magnetized magnet 51 and a multipolar magnetized magnet 5
In this technology, a magnetic flux detection means 53 for detecting leakage magnetic flux from 1 is arranged substantially parallel to the axial direction of the rotating body 52, and the leakage magnetic flux that changes alternately due to the rotation of the multipolar magnetized magnet 51 is detected. be.
【0003】0003
【発明が解決しようとする課題】上記磁気式回転検出装
置の磁束検出手段53は、磁束密度の強度を計測する検
知部の検知素子の面を磁束と直交する方向に配置してい
たため、検知素子の大きさが着磁ピッチ間隔以下でない
と交番的な磁束密度の変化を検出することができず、着
磁ピッチ間隔を縮小して高分解能に回転角度を検知する
には、検知素子の大きさに制限があって困難であるとい
う問題点があった。[Problems to be Solved by the Invention] The magnetic flux detecting means 53 of the magnetic rotation detecting device has the detecting element of the detecting section for measuring the intensity of the magnetic flux density arranged in a direction perpendicular to the magnetic flux. It is not possible to detect alternating changes in magnetic flux density unless the size of the magnetization pitch is smaller than the magnetization pitch interval.In order to reduce the magnetization pitch interval and detect the rotation angle with high resolution, the size of the sensing element must be The problem was that there were restrictions and it was difficult.
【0004】この発明は、上記従来技術の問題点に着目
し高分解能を有する磁気式回転速度検出装置を提供する
ことを目的としている。SUMMARY OF THE INVENTION The present invention focuses on the problems of the prior art described above and aims to provide a magnetic rotation speed detection device having high resolution.
【0005】[0005]
【課題を解決するための手段】上記の目的を達成する手
段は、特許請求の範囲に記載されており、多極着磁磁石
からのもれ磁束と平行の方向に検知素子面を配列した検
知部を設け、この検知素子面に隣接する少なくとも片面
に高透磁率磁性層を積層することにより、前記検知素子
の厚み方向に通過する交番的な磁束強度の変化を検出す
るように構成した磁気式回転検出装置によって達成され
る。[Means for Solving the Problems] The means for achieving the above object is described in the claims, and includes a sensing device in which sensing element surfaces are arranged in a direction parallel to leakage magnetic flux from a multipolar magnetized magnet. A magnetic type configured to detect alternating changes in magnetic flux intensity passing in the thickness direction of the sensing element by laminating a high permeability magnetic layer on at least one side adjacent to the sensing element surface. This is achieved by a rotation detection device.
【0006】[0006]
【作用】上記の構成により、多極着磁磁石からのもれ磁
束は、もれ磁束と平行に検知素子面が配列されているか
ら、もれ磁束は検知素子面と直角の方向に横切ることな
く傾斜角をもって検知素子面を通過することになり、着
磁ピッチ間隔が小さくなっても、磁束密度の変化を捉え
ることができ、かつ高透磁率磁性材を積層した検知素子
によって、もれ磁束を集中的に検知素子面を通過させる
ようになるから、磁束密度の微小の変化を効果的に検出
することができる。[Function] With the above configuration, the leakage magnetic flux from the multi-pole magnetized magnet is prevented from crossing in the direction perpendicular to the detection element surface, since the sensing element surface is arranged parallel to the leakage magnetic flux. Even if the magnetization pitch becomes small, changes in the magnetic flux density can be detected even if the magnetization pitch is small, and leakage magnetic flux is prevented by the sensing element laminated with high permeability magnetic material. Since the magnetic flux passes through the sensing element surface in a concentrated manner, minute changes in magnetic flux density can be effectively detected.
【0007】[0007]
【実施例】以下、この発明を図面に基づいて説明する。
図1は、この発明の一実施例の構成を示す側面説明図で
あって、磁束密度の大きさを検知する検知部1は、多極
着磁磁石4のもれ磁束の方向と平行の方向に検知部1の
内部に形成した検知素子11の平面が配置されている。
換言すれば、多極着磁磁石4の着磁方向と検知素子11
の平面とは互いに直交している。検知部1は、検知素子
11とこれを保護する保護膜12と高透磁率磁性層13
と検知部1の全体をパッケージングする保護樹脂層3と
からなる。検知素子11は、例えばインジウム・アンチ
モン(InSb)の半導体性の磁気抵抗素子を使用し、
図2に示すようにアルミナやガラスなどの基板14と、
基板14の上にスパッタリングによる絶縁膜15とが形
成されている。この絶縁膜15は、基板14と検知素子
11と間に介在し、線膨張係数の差による応力発生に伴
う磁気抵抗素子の蒸着膜の剥離を防止するため、基板1
4と検知素子11の中間値の線膨張係数をもつ材質によ
り形成されている。この絶縁膜15の上に前記のような
検知素子11が蒸着法により形成されている。この検知
素子11は、例えば図3に示す配列になるようにパター
ニングされている。また検知素子11を形成した後に電
極16が蒸着法により形成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained below based on the drawings. FIG. 1 is an explanatory side view showing the configuration of an embodiment of the present invention, in which a detection unit 1 that detects the magnitude of magnetic flux density is arranged in a direction parallel to the direction of leakage magnetic flux of a multipolar magnetized magnet 4. A flat surface of the sensing element 11 formed inside the sensing portion 1 is disposed. In other words, the magnetization direction of the multipolar magnetized magnet 4 and the detection element 11
are perpendicular to each other. The detection unit 1 includes a detection element 11, a protective film 12 that protects the detection element 11, and a high permeability magnetic layer 13.
and a protective resin layer 3 that packages the entire detection section 1. The detection element 11 uses, for example, a semiconductor magnetoresistive element of indium antimony (InSb),
As shown in FIG. 2, a substrate 14 such as alumina or glass,
An insulating film 15 is formed on the substrate 14 by sputtering. This insulating film 15 is interposed between the substrate 14 and the sensing element 11, and is used to prevent the deposited film of the magnetoresistive element from peeling off due to the generation of stress due to the difference in coefficient of linear expansion.
4 and the sensing element 11. The sensing element 11 as described above is formed on this insulating film 15 by a vapor deposition method. The sensing elements 11 are patterned, for example, in the arrangement shown in FIG. Further, after forming the sensing element 11, the electrode 16 is formed by a vapor deposition method.
【0008】図1のように、検知素子11を保護するた
めの保護膜12、例えば酸化ケイ素(SiO2)をスパ
ッタリングにより薄膜状に被覆形成して検知部1を構成
し、さらに検知部1に隣接してケイ素鋼板等からなる高
透磁率磁性層13を配置する。高透磁率磁性層13は多
極着磁磁石4からのもれ磁束を集束し、集束した磁束が
検知部1を通過するように作用する。検知素子11は、
磁性半導体としてのホール素子でもよく、例えばガリウ
ム・ヒ素(GaAs)の単結晶からなるウエハが適用さ
れる。As shown in FIG. 1, a protective film 12 for protecting the sensing element 11, for example silicon oxide (SiO2), is formed by sputtering to form a thin film to constitute the sensing part 1, and furthermore, a protective film 12 for protecting the sensing element 11 is formed by sputtering. Then, a high permeability magnetic layer 13 made of a silicon steel plate or the like is arranged. The high permeability magnetic layer 13 acts to focus leakage magnetic flux from the multipolar magnetized magnet 4 and causes the focused magnetic flux to pass through the detection section 1 . The sensing element 11 is
A Hall element as a magnetic semiconductor may be used, and for example, a wafer made of a single crystal of gallium arsenide (GaAs) is used.
【0009】次に実施例の作用を図1に基づいて説明す
る。多極着磁磁石4はN極とS極が交互に着磁されてい
る。本発明は、高分解能の回転角度を検知する装置を提
供することを目的としているため、例えば多極着磁磁石
4の着磁ピッチ間隔は0.5mmとし、材質としては、
例えばマンガン・アルミニウム合金(MnAl)の微粉
末を圧縮成形したのち、着磁機により着磁したものであ
る。このような多極着磁磁石4からは磁力線10で示さ
れる磁束がN極からS極に向けて空中に放出される。Next, the operation of the embodiment will be explained based on FIG. The multipolar magnetized magnet 4 is magnetized alternately to have north and south poles. Since the present invention aims to provide a device that detects a rotation angle with high resolution, for example, the magnetization pitch interval of the multipolar magnetized magnet 4 is 0.5 mm, and the material is
For example, fine powder of manganese-aluminum alloy (MnAl) is compressed and then magnetized using a magnetizer. From such a multipolar magnetized magnet 4, magnetic flux indicated by lines of magnetic force 10 is emitted into the air from the north pole toward the south pole.
【0010】磁束密度を検知する検知部1に隣接して高
透磁率磁性層13が配置されているため、磁力線10は
この検知部1の方向に引きよせられる。回転体2の回転
により多極着磁磁石4のN極、S極は、検知部1に対し
て交番的に出現することになり、検知部1を通過する磁
束密度が変化し、検知部1はこれに最も近いN極からの
磁束を検知することになる。こうして検知部1は多極着
磁磁石4からの交番的もれ磁束の変化を検知し回転角度
を計測する。Since the high permeability magnetic layer 13 is disposed adjacent to the detection section 1 for detecting magnetic flux density, the lines of magnetic force 10 are drawn toward the detection section 1. Due to the rotation of the rotating body 2, the N and S poles of the multipolar magnetized magnet 4 appear alternately with respect to the detection unit 1, and the magnetic flux density passing through the detection unit 1 changes, and the magnetic flux density passing through the detection unit 1 changes. will detect the magnetic flux from the N pole closest to this. In this way, the detection unit 1 detects changes in the alternating leakage magnetic flux from the multipolar magnetized magnet 4 and measures the rotation angle.
【0011】図5に示すように、検知部1は例えばピッ
チ0.5mmごとに着磁された多極着磁磁石4からのも
れ磁束を検知するため検知部1の厚みは着磁ピッチ間隔
以下でなくてはならないから、検知部1は検知素子11
のみから形成されている。As shown in FIG. 5, the detecting section 1 detects the leakage magnetic flux from the multi-polar magnetized magnet 4 magnetized at a pitch of 0.5 mm, for example, so the thickness of the detecting section 1 is equal to the magnetizing pitch interval. The detection unit 1 must be the detection element 11.
It is formed from only.
【0012】また、多極着磁磁石4は製造費低減のため
必要部位にのみに配置し、回転体2の主体部は樹脂層5
によって形成されることがある。また必要に応じて多極
着磁磁石4を保護する保護層6を外表面に形成(図1参
照)してもよい。In addition, the multipolar magnetized magnet 4 is arranged only in necessary parts to reduce manufacturing costs, and the main body of the rotating body 2 is covered with a resin layer 5.
may be formed by Further, if necessary, a protective layer 6 for protecting the multipolar magnetized magnet 4 may be formed on the outer surface (see FIG. 1).
【0013】図3に示す検知素子11の配置を具体的に
実施する場合は、図4の等価回路のなかで作動増幅する
ことにより信号レベルを増大させることが可能である。When the arrangement of the sensing elements 11 shown in FIG. 3 is specifically implemented, it is possible to increase the signal level by performing operational amplification in the equivalent circuit shown in FIG.
【0014】[0014]
【発明の効果】本発明の実施により、回転体に配設した
着磁ピッチ間隔が狭い多極着磁磁石からのもれ磁束の交
番的変化を検出素子の厚み方向に通過させて集中的に検
知し、高分解能の回転角度検知が可能な磁気式回転検出
装置を提供することができる。[Effects of the Invention] By carrying out the present invention, alternating changes in leakage magnetic flux from a multipolar magnetized magnet with a narrow magnetization pitch disposed on a rotating body are passed through the thickness direction of the detection element and concentrated. It is possible to provide a magnetic rotation detection device capable of detecting a rotation angle with high resolution.
【図1】本発明の一実施例の構成を示す側面図である。FIG. 1 is a side view showing the configuration of an embodiment of the present invention.
【図2】本発明に係る検知素子の一実施例の構成を示す
斜視図である。FIG. 2 is a perspective view showing the configuration of an embodiment of a sensing element according to the present invention.
【図3】本発明の検知素子の配列パターンを示す図であ
る。FIG. 3 is a diagram showing an arrangement pattern of sensing elements of the present invention.
【図4】図3の作用の等価回路を示す図である。FIG. 4 is a diagram showing an equivalent circuit for the operation of FIG. 3;
【図5】他の実施例の回転体と検知素子の配置を示す斜
視図である。FIG. 5 is a perspective view showing the arrangement of a rotating body and a sensing element in another embodiment.
【図6】従来技術の斜視図である。FIG. 6 is a perspective view of the prior art.
1 検知部 2 回転体 3 保護樹脂層 4 多極着磁磁石 5 樹脂層 6 保護層 10 磁力線 11 検知素子 12 保護膜 13 高透磁率磁性層 14 基板 15 絶縁膜 16 電極 1 Detection part 2 Rotating body 3 Protective resin layer 4 Multipolar magnetized magnet 5 Resin layer 6 Protective layer 10 Magnetic field lines 11 Detection element 12 Protective film 13 High permeability magnetic layer 14 Substrate 15 Insulating film 16 Electrode
Claims (1)
記磁石からのもれ磁束密度の変化を検知して前記回転体
の回転速度を検出する磁気式回転検出装置において、前
記磁石からのもれ磁束と平行の方向に検知素子面を有す
る検知部と、前記検知素子面と隣接する面に設けた高透
磁率磁性層と、を備えることにより前記検知素子の厚み
方向に通過する交番的な磁束強度の変化を検出すること
を特徴とする磁気式回転検出装置。1. A magnetic rotation detection device in which a multipolar magnetized magnet is formed as a part of a rotating body, and the rotational speed of the rotating body is detected by detecting a change in leakage magnetic flux density from the magnet, comprising: By including a sensing portion having a sensing element surface in a direction parallel to the leakage magnetic flux from the magnet, and a high permeability magnetic layer provided on a surface adjacent to the sensing element surface, A magnetic rotation detection device characterized by detecting alternating changes in the intensity of passing magnetic flux.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3069683A JPH04305158A (en) | 1991-04-02 | 1991-04-02 | Magnetic rotation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3069683A JPH04305158A (en) | 1991-04-02 | 1991-04-02 | Magnetic rotation detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04305158A true JPH04305158A (en) | 1992-10-28 |
Family
ID=13409915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3069683A Pending JPH04305158A (en) | 1991-04-02 | 1991-04-02 | Magnetic rotation detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04305158A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008292466A (en) * | 2007-04-25 | 2008-12-04 | Aisin Seiki Co Ltd | Angle detector |
JP2009150732A (en) * | 2007-12-19 | 2009-07-09 | Asahi Kasei Electronics Co Ltd | Position detection device |
US8664943B2 (en) | 2010-07-07 | 2014-03-04 | Asahi Kasei Microdevices Corporation | Position detecting apparatus |
-
1991
- 1991-04-02 JP JP3069683A patent/JPH04305158A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008292466A (en) * | 2007-04-25 | 2008-12-04 | Aisin Seiki Co Ltd | Angle detector |
JP2009150732A (en) * | 2007-12-19 | 2009-07-09 | Asahi Kasei Electronics Co Ltd | Position detection device |
US8664943B2 (en) | 2010-07-07 | 2014-03-04 | Asahi Kasei Microdevices Corporation | Position detecting apparatus |
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