JPH04296037A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH04296037A JPH04296037A JP6144591A JP6144591A JPH04296037A JP H04296037 A JPH04296037 A JP H04296037A JP 6144591 A JP6144591 A JP 6144591A JP 6144591 A JP6144591 A JP 6144591A JP H04296037 A JPH04296037 A JP H04296037A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electrodes
- semiconductor manufacturing
- manufacturing device
- step coverage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】 本発明は半導体装置の製造工
程において、薄膜の膜厚異常を検出するための装置を備
えた製造装置に関し、とくに電極配線用スパッタ装置や
導電物質の成膜装置等の半導体製造装置に関する。[Field of Industrial Application] The present invention relates to manufacturing equipment equipped with a device for detecting abnormalities in the thickness of thin films in the manufacturing process of semiconductor devices, and in particular to manufacturing equipment such as sputtering equipment for electrode wiring and equipment for depositing conductive materials. Related to semiconductor manufacturing equipment.
【０００２】0002
【従来の技術】 スパッタ装置においては、ターゲッ
ト物質の使用回数が増えるに従い、ステップカバレージ
が劣化していく現象が起こる。図５はサンプル基板上に
形成された導電物質のカバレージの状態を示す図である
。
サンプル基板Ｓ上に形成されたＳｉＯ２ 上に導電物質
５が形成されている。図５（ａ）はカバレージが良好な
状態を示し、一方、図５（ｂ）はカバレージが不良な状
態を示している。（ｂ）に示すようにステップカバレー
ジが劣化すると導電物質が部分的に薄くなり抵抗の増大
や断線を引き起こすため、ステップカバレージの劣化を
防ぐ必要がある。2. Description of the Related Art In a sputtering apparatus, a phenomenon occurs in which step coverage deteriorates as the number of times a target material is used increases. FIG. 5 is a diagram showing the state of coverage of the conductive material formed on the sample substrate. A conductive material 5 is formed on SiO2 formed on a sample substrate S. FIG. 5(a) shows a state with good coverage, while FIG. 5(b) shows a state with poor coverage. As shown in (b), when the step coverage deteriorates, the conductive material becomes partially thin, causing an increase in resistance and disconnection, so it is necessary to prevent the step coverage from deteriorating.
【０００３】従来技術においては、たとえばスパッタ装
置の場合、ターゲットの寿命は、積算電力計によりその
使用時間を算出したり、またロット数の管理を行いその
使用枚数によって決めることが行われていた。また、よ
り厳密にターゲットの寿命を決めるにはターゲットの使
用時間とステップカバレージとの関係をあらかじめ調べ
ておき、その関係から問題のない範囲でターゲットを交
換することが行われてきた。[0003] In the prior art, for example, in the case of a sputtering apparatus, the life of a target is determined by calculating the usage time using an integrated wattmeter or by controlling the number of lots and determining the target life by the number of used targets. Furthermore, in order to more precisely determine the lifespan of a target, the relationship between the usage time of the target and the step coverage has been investigated in advance, and based on that relationship, the target has been replaced within a range that causes no problems.
【０００４】0004
【発明が解決しようとする課題】 ところで、上述し
た従来の技術では、ロットの管理を行ったり、積算電力
計を備える等の煩雑な工程があるという問題があった。
また、ステップカバレージの状態についても予測的にし
か判断できないという点でも問題があった。本発明は上
記の問題点を鑑み、サンプルのステップカバレージの状
態について各サンプル毎に迅速にかつ正確にその状態を
検出でき、不良ロットを最小限に抑えることのできる半
導体製造装置を提供することを目的とする。[Problems to be Solved by the Invention] However, the above-mentioned conventional technology has a problem in that it involves complicated steps such as managing lots and providing an integrating wattmeter. There is also a problem in that the state of step coverage can only be determined predictively. In view of the above problems, it is an object of the present invention to provide a semiconductor manufacturing apparatus that can quickly and accurately detect the step coverage state of each sample and minimize defective lots. purpose.
【０００５】[0005]
【課題を解決するための手段】 上記の目的を達成す
るために、実施例に対応する図１を参照しつつ説明する
と、本発明の半導体製造装置は、サンプル１に接触する
複数の電極３ａ，３ｂ，３ｃが配設されており、その各
電極間の抵抗値を測定する測定部９を備えたことによっ
て特徴づけられる。[Means for Solving the Problems] In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention will be described with reference to FIG. 1 corresponding to an embodiment. 3b and 3c, and is characterized by having a measuring section 9 for measuring the resistance value between the respective electrodes.
【０００６】[0006]
【作用】 サンプル１に接触して設けられた複数の電
極３ａ，３ｂ，３ｃについて各電極間の抵抗値を測定す
ると、ステップカバレージが悪くなった場合には、それ
が良好なときに比べて各電極間の抵抗値が増加するので
サンプルの膜厚異常を検出できる。[Operation] When the resistance value between each electrode is measured for the plurality of electrodes 3a, 3b, and 3c provided in contact with the sample 1, if the step coverage becomes poor, each Since the resistance value between the electrodes increases, abnormalities in the film thickness of the sample can be detected.
【０００７】[0007]
【実施例】 図１は本発明実施例の全体構成を示す図
であり、図２は図１のＸ−Ｙ断面図である。以下にこれ
らの図面を参照しながら、本発明実施例を詳細に説明す
る。サンプルホルダ２上にはサンプル１が載置されてお
り、電極３ａ，３ｂ，３ｃが島状に形成されている。各
々の電極には配線１２が施され、測定部９に接続されて
いる。これら複数の電極３ａ，３ｂ，３ｃはサンプル１
に接触させるが、電極はサイドデポあるいはデポアップ
時におけるサンプル１の支持を兼ねたものでもよい。こ
の電極はサンプル１が装着された時に自動的にサンプル
１に接触するようにしておく。なお、電極は、図４に示
すようにサンプル１を別のホルダ２ａを矢附の方向に移
動させ、電極３ｘ，３ｙをサンプル１上に接触させ、こ
のホルダ２ａで押さえ込む仕様のものでもよい。Embodiment FIG. 1 is a diagram showing the overall configuration of an embodiment of the present invention, and FIG. 2 is an XY cross-sectional view of FIG. 1. Embodiments of the present invention will be described in detail below with reference to these drawings. A sample 1 is placed on a sample holder 2, and electrodes 3a, 3b, and 3c are formed in an island shape. A wiring 12 is provided to each electrode and connected to the measuring section 9. These plurality of electrodes 3a, 3b, 3c are connected to the sample 1.
However, the electrode may also be used to support the sample 1 during side deposition or during deposition. This electrode is arranged to automatically come into contact with the sample 1 when the sample 1 is attached. Note that the electrodes may be of a specification in which the sample 1 is moved to another holder 2a in the direction of the arrow as shown in FIG. 4, the electrodes 3x and 3y are brought into contact with the sample 1, and the sample 1 is held down by the holder 2a.
【０００８】測定部９は、各々の電極間における抵抗値
の測定手段であり、電極３ａ，３ｂ，３ｃの端子８ａ，
８ｂ，８ｃが設けられている。以上の構成よりなる本発
明実施例の動作を以下に説明する。図３は本発明実施例
の測定部の要部回路図である。図３に示すように、各電
極の端子８ａ，８ｂ，８ｃはセレクタ７により電源１０
、電流計６の両端に接続される。これら３個の電極間の
測定を行う場合、セレクタ７は、端子８ａ−８ｂ間、端
子８ａ−８ｃ間、端子８ｂ−８ｃ間の３通り組合せを電
源１０、電流計６の両端に選択的に接続し、測定を行う
。The measuring section 9 is a means for measuring the resistance value between the respective electrodes, and is a means for measuring the resistance value between the electrodes 3a, 3b, 3c.
8b and 8c are provided. The operation of the embodiment of the present invention having the above configuration will be explained below. FIG. 3 is a circuit diagram of the main part of the measuring section according to the embodiment of the present invention. As shown in FIG. 3, the terminals 8a, 8b, 8c of each electrode
, are connected to both ends of the ammeter 6. When measuring between these three electrodes, the selector 7 selectively applies three combinations between the terminals 8a and 8b, between the terminals 8a and 8c, and between the terminals 8b and 8c to both ends of the power supply 10 and the ammeter 6. Connect and take measurements.
【０００９】なお、スパッタ装置の場合にはプラズマの
影響により、電位は不安定となり測定できないため、成
膜時においては電極３ａ，３ｂ，３ｃはグランドやサン
プルホルダ２と同じ電位に固定しておく。また、実際測
定を行った場合、図２に示すような段差１１のあるサン
プル１であれば抵抗値の差があるので抵抗値の変化を検
知するのは容易であるが、段差部が少なく、抵抗値の差
が小さい場合は、その差が検知しやすいようなモニタサ
ンプルを各ロット毎に１枚挿入し、そのモニタサンプル
と比較することにより抵抗値の変化を容易に検知するこ
とができる。[0009] In the case of a sputtering device, the potential becomes unstable due to the influence of plasma and cannot be measured, so the electrodes 3a, 3b, and 3c are fixed at the same potential as the ground and the sample holder 2 during film formation. . In addition, when actual measurements are performed, if sample 1 has a step 11 as shown in FIG. If the difference in resistance value is small, the change in resistance value can be easily detected by inserting one monitor sample for each lot so that the difference can be easily detected and comparing it with the monitor sample.
【００１０】上述した抵抗値の差は、ステップカバレー
ジが悪くなると、各電極間の抵抗値が増加するために生
ずるものである。このようにサンプル１の膜厚の異常が
検出された場合には、それにともないターゲットの寿命
もすぐに判断できることから、この時点で不良ロットを
防止できる。なお、本発明は以上説明したスパッタ装置
に限ることなく、たとえばＣＶＤ等の他の成膜装置を使
用した場合についても、導電膜を成膜した場合の膜厚異
常をサンプル毎に検知することができる。The above-mentioned difference in resistance value occurs because the resistance value between each electrode increases as the step coverage deteriorates. In this way, when an abnormality in the film thickness of sample 1 is detected, the lifetime of the target can be determined immediately, so that defective lots can be prevented at this point. Note that the present invention is not limited to the sputtering apparatus described above, and can also detect abnormalities in film thickness for each sample when a conductive film is formed, even when other film forming apparatuses such as CVD are used. can.
【００１１】[0011]
【発明の効果】 以上説明したように、本発明によれ
ば、薄膜に接触する複数の電極を配設し、各電極間の抵
抗値を測定する測定手段を備えたので、サンプルのステ
ップカバレージの状態について各サンプル毎に迅速にか
つ正確にその状態を検出でき、不良ロットを最小限に抑
えることができる。また、他の膜厚異常たとえば設定値
からの膜厚のずれ等も同時に検知することができる。こ
の結果、デバイス特性の優れた半導体装置を提供するこ
とができる。Effects of the Invention As described above, according to the present invention, a plurality of electrodes are arranged in contact with a thin film, and a measuring means for measuring the resistance value between each electrode is provided, so that step coverage of the sample can be improved. The condition of each sample can be detected quickly and accurately, and defective lots can be minimized. Further, other film thickness abnormalities, such as deviations in film thickness from a set value, can also be detected at the same time. As a result, a semiconductor device with excellent device characteristics can be provided.
【図１】 本発明実施例の全体構成を示す図[Figure 1] Diagram showing the overall configuration of an embodiment of the present invention
【図２】
図１のＸ−Ｙ断面図[Figure 2]
X-Y sectional view of Figure 1
【図３】 本発明実施例の測定部の要部回路図[Figure 3] Main part circuit diagram of the measurement section of the embodiment of the present invention
【図４
】 本発明の他の実施例の説明図[Figure 4
] Explanatory diagram of another embodiment of the present invention
【図５】 ステッ
プカバレージの説明図[Figure 5] Explanatory diagram of step coverage
１・・・・サンプル
２・・・・サンプルホルダ
３ａ，３ｂ，３ｃ，３ｘ，３ｙ・・・・電極８ａ，８ｂ
，８ｃ・・・・端子
９・・・・測定部1...Sample 2...Sample holder 3a, 3b, 3c, 3x, 3y...Electrode 8a, 8b
, 8c...terminal 9...measuring part
Claims (1)
おいて、上記薄膜に接触する複数の電極が配設されてい
るとともに、その各電極間の抵抗値を測定する測定手段
を備えたことを特徴とする半導体製造装置。1. An apparatus for manufacturing a thin film on a semiconductor substrate, characterized in that a plurality of electrodes are disposed in contact with the thin film, and a measuring means is provided for measuring the resistance value between each of the electrodes. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6144591A JPH04296037A (en) | 1991-03-26 | 1991-03-26 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6144591A JPH04296037A (en) | 1991-03-26 | 1991-03-26 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04296037A true JPH04296037A (en) | 1992-10-20 |
Family
ID=13171273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6144591A Pending JPH04296037A (en) | 1991-03-26 | 1991-03-26 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04296037A (en) |
-
1991
- 1991-03-26 JP JP6144591A patent/JPH04296037A/en active Pending
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