JPH0429581Y2 - - Google Patents

Description

[Detailed description of the invention] (Field of industrial application) The present invention is a Hall element that is effectively used in motor rotation control, magnetic non-contact switches, etc., and in particular, it is composed of a magnetic substrate as the main body. The present invention relates to a Hall element having a configuration in which a small piece of a magnetic material for collecting magnetism is provided on a semiconductor film having a predetermined pattern formed on a substrate.

(Prior art) It has been known for a long time that a highly sensitive Hall element can be constructed by improving the magnetic concentrating effect, and this type of highly sensitive Hall element is made of glass, SiO2, etc. on a magnetic substrate, for example. _A semiconductor film having a predetermined pattern (for example,
A Hall element with a so-called sandwich-arch structure has already been provided, in which a thin film of InSb or InAs is formed, and a small piece of magnetic material for magnetization is fixed to a predetermined portion on the semiconductor film.

FIG. 8 is a diagram for explaining an example of the configuration of the Hall element having the above-mentioned sand-gerch structure. In the Hall element shown in FIG. 3 is an insulating film made of a thin glass film or a thin film of silicon dioxide, and 3 is a semiconductor film deposited in a predetermined pattern on the above-mentioned insulating film 2 by, for example, photolithography.

Reference numeral 13 denotes a ferrite chip, and this ferrite chip 13 is bonded by an adhesive layer 12 to a portion of the semiconductor film 3 having the above-mentioned predetermined pattern corresponding to the magnetically sensitive operating portion.

Further, 4 to 7 are formed into a predetermined pattern by photolithography, for example, on the insulating film 2 so as to be electrically connected to each end of the semiconductor film 3 having the predetermined pattern. The chip of the Hall element consisting of the above-mentioned parts is formed by connecting wires 8-11 between each of the above-mentioned electrodes 4-7 and the external terminals 14-17 formed by the lead frame by wire bonding.
After being electrically connected to the individual terminals by
The finished product is housed in the outer container 18 by molding using synthetic resin.

In the configuration example of the Hall element with the Sanderch structure described with reference to FIG. Alternatively, an insulating film 2 such as a thin film of silicon dioxide
It was said that a predetermined pattern of a semiconductor film such as InSb or InAs was formed on the insulating film 2.
For example, the magnetic support substrate that includes the main magnetic substrate (ferrite substrate 1) described above has a crystal structure similar to that of the constituent material of the semiconductor film, and A semiconductor film of a predetermined thickness is deposited by vacuum evaporation on a substrate with an extremely smooth surface made of a material with a lattice constant close to that of the constituent materials. to form an adhesion,
Next, after bonding the front side of the semiconductor film described above to the ferrite substrate 1 via an adhesive layer, the substrate described above is peeled off, and the semiconductor film is bonded onto the ferrite substrate 1 via an adhesive layer made of epoxy resin. Alternatively, a Hall element may be constructed by making a material with a material attached thereto and using it.

(Problems to be solved by the invention) The conventional Hall element explained with reference to FIG.
The four external terminals 14 to 17 provided so as to protrude outward from the outer container are of a double terminal type, two of which are provided separately on both sides of the external container. In addition to the two-terminal type mentioned above, Hall elements have traditionally been used in four types.
Various configurations are known, such as a single terminal type in which external terminals are provided only on one side of the external container, and a so-called mini-mold type.

By the way, conventional Hall elements, regardless of which of the various configurations mentioned above, are manufactured by mounting a Hall element chip on a lead frame to be used as an external terminal. Therefore, the surface of the lead frame and the surface of the semiconductor thin film in the Hall element are parallel to each other.

Therefore, when the surface of the semiconductor thin film in the Hall element is perpendicular to the direction of the magnetic field and the Hall element exhibits maximum detection sensitivity, the magnetic field is
The direction is perpendicular to the plane of 7.

Now, when detecting a magnetic field using a Hall element, the plane of the semiconductor thin film in the Hall element must be perpendicular to the magnetic field so that the Hall element can be used in a state where it exhibits maximum sensitivity. Normally, the mounting position of the Hall element is determined so that

As mentioned above, if the external terminal of a conventional Hall element, in which the surface of the lead frame and the surface of the semiconductor thin film in the Hall element are in a parallel relationship, is attached to a printed circuit board as is, The Hall element can detect the magnetic field with maximum detection sensitivity for magnetic fields in orthogonal directions, but the direction of the magnetic field that should be detected by the Hall element is in the printed circuit board. In some cases, the direction of the magnetic field to be detected by the Hall element is closer to the direction parallel to the surface of the printed circuit board than the direction perpendicular to the surface of the printed circuit board. In cases where the direction is closer to parallel to the surface of the printed circuit board than the direction parallel to the surface of the printed circuit board, a conventional Hall element in which the surface of the lead frame and the surface of the semiconductor thin film in the Hall element are parallel to each other, the external terminals of the It goes without saying that when the Hall element is attached to a printed circuit board in this state, the magnetic field cannot be detected in a good manner by the Hall element.

As mentioned above, an example of a case where the direction of the magnetic field to be detected by the Hall element is closer to the direction parallel to the surface of the printed circuit board than the direction perpendicular to the surface of the printed circuit board is In order to construct an ultra-thin DC brushless motor that uses the element as a generation element for a timing signal for switching the armature current, the outer periphery of the rotor is made of permanent magnets with a predetermined magnetization pattern. A DC brushless motor having a configuration as shown in FIG. 9 in which a Hall element is disposed on the side can be cited.

In FIG. 9, 19 is a rotor made of permanent magnets magnetized in a predetermined magnetization pattern in the circumferential direction, and 20 is a rotor made of a laminated iron plate 20a and a resin layer 20b. , resin layer 20b
It is a printed circuit board on which conductor material layers 21 and 22 of a predetermined pattern are formed, and 24 is a Hall element. In FIG. 9, illustrations and explanations of parts that are not necessary for explaining the problems related to the present invention are largely omitted. In FIG. 9, 21 is a winding pattern for the frequency generator, and 22 is a wiring pattern to be connected to the external terminal of the Hall element 24.

In the rotor 19 of the DC brushless motor configured as shown in FIG. Since the individual magnetic poles are formed in a magnetized manner such that the lines of magnetic force pass in the thickness direction (vertical direction in the figure), the rotor at the position of the Hall element 24 disposed on the outer side of the rotor 19 The direction of the leakage magnetic flux from 19 is approximately parallel to the surface of the printed circuit board 20.

Therefore, if the Hall element 24, which should be placed outside the rotor 19 in FIG. 9, is attached to the printed circuit board with the external terminals intact, as in the normal case described above, Rotor 19 to be detected by Hall element
Because the direction of leakage magnetic flux from the magnetic field, that is, the direction of the magnetic field in that part, is closer to the direction parallel to the surface of the printed circuit board than the direction perpendicular to the surface of the printed circuit board, some Hall elements may not be in good condition. Since the magnetic field cannot be detected, the manner in which the Hall element 24 is attached to the printed circuit board 20 in this case is such that the surface of the semiconductor film in the Hall element 24 is orthogonal to the leakage magnetic flux from the rotor 19. In order to attach the Hall element to a printed circuit board, for example, a hole is made in the printed circuit board into which the external terminal of the Hall element is inserted, and the external terminal of the Hall element is inserted into the hole and soldered. Another mounting method is also possible, but in order to improve manufacturing accuracy, such a mounting method cannot be used with a printed circuit board that has a structure of laminating a steel plate and an insulating film. When using a printed circuit board constructed by laminating layers, as shown in FIG. An attempt was made to make the surface of the semiconductor thin film in the element 24 perpendicular to the leakage magnetic flux from the rotor 19 to be detected by the Hall element, that is, the direction of the magnetic field in that part. However, when such a method is adopted, there is a problem in that the number of man-hours increases and the cost increases compared to the conventional method.

To solve the above problem, for example, the direction of the chip of the Hall element to be housed in the mini-mold package is rotated by a right angle compared to the case already described with reference to FIG. If it is then stored in a mini-mold package, it can be automatically mounted on a printed circuit board using a chip and mounter, and automation of soldering using a reflow oven becomes easy. However, as mentioned above, the direction of the Hall element chip to be housed in the mini mold package is rotated by a right angle compared to the case described above with reference to FIG. Such a solution cannot be adopted since it is almost impossible to accommodate it in a molded package.

(Means for Solving the Problems) The present invention is applied to a predetermined pattern of a semiconductor film formed on a magnetic support substrate that includes a main magnetic substrate, or on the semiconductor film described above. In a Hall element having a configuration in which a magnetic body for magnetic flux collection is provided on the formed protective film, the above-mentioned steps are performed starting from the portion corresponding to the main area at the center of the semiconductor film of the above-described predetermined pattern. A magnetism collecting magnetic material having a configuration that extends beyond one end of the magnetic material support substrate and occupies an outwardly protruding portion is provided asymmetrically with respect to the center of the pattern of the semiconductor film described above. By providing a Hall element, the above-mentioned conventional problems are solved.

(Example) Hereinafter, specific contents of the Hall element of the present invention will be explained in detail with reference to the accompanying drawings. FIG. 1 is a perspective view of an embodiment of the Hall element of the present invention, a of FIG. 2 is a plan view of an embodiment of the Hall element of the present invention shown in FIG. 1, and b of FIG. Fig. 2 is a longitudinal sectional side view taken along the line A-A at a, Fig. 3 is an example of a sensitivity characteristic curve, Figs. 5 to 7 are perspective views of other embodiments of the Hall element of the present invention.

In the Hall element of the present invention shown in FIG. 1, 1 is a ferrite substrate, 2 is an insulating film made of a thin glass film or a thin film of silicon dioxide formed on the ferrite substrate 1, and 2 is an insulating film formed on the ferrite substrate 1. 1 and the insulating film 2 constitute a magnetic support substrate MS. Reference numeral 3 denotes a semiconductor film (for example, a thin film of InSb or InAs) which is deposited in a predetermined pattern on the above-mentioned insulating film 2 by, for example, photolithography.

Mx is a magnetic material for magnetic flux collection, and a ferrite chip, for example, is used as the magnetic material Mx for magnetic flux collection. The magnetic material Mx for magnetic flux collection is extended from a portion corresponding to the central main region of the semiconductor film 3 of the above-described predetermined pattern in the Hall element beyond one end of the above-mentioned magnetic support substrate Ms. The magnetic material Mx for magnetic flux collection used in the Hall element shown in the embodiment shown in Fig. 1 is shown in Fig. 2. As is clear from the shown plan view and longitudinal side view, the main area at the center of the portion of the semiconductor film 3 which is a rectangular parallelepiped and has the above-mentioned predetermined pattern and corresponds to the magnetically sensitive operating part. The area from the corresponding part to one end of the magnetic support substrate Ms is bonded with an adhesive layer 12, and the end thereof protrudes outward from the end of the magnetic support substrate Ms. It is made to be.

Further, 4 to 7 are formed into a predetermined pattern by photolithography, for example, on the insulating film 2 so as to be electrically connected to each end of the semiconductor film 3 having the predetermined pattern. The chip of the Hall element consisting of the above-mentioned parts is formed by connecting wires 8-11 between each of the above-mentioned electrodes 4-7 and the external terminals 14-17 formed by the lead frame by wire bonding.
After being electrically connected to the individual terminals by
The finished product is housed in the outer container 18 by molding using synthetic resin.

In the Hall element with the Sanderch structure described with reference to FIG. The insulating film 2, such as a thin film of For example, as a magnetic material supporting substrate configured to include a magnetic material substrate (ferrite substrate 1), which has a crystal structure similar to that of the constituent material of the semiconductor film, and which has a crystal structure similar to that of the constituent material of the semiconductor film, A semiconductor film of a predetermined thickness is deposited and formed by vacuum evaporation on a substrate with an extremely smooth surface made of a substance with a lattice constant close to the lattice constant. Next, after bonding the front side of the semiconductor film described above to the ferrite substrate 1 via an adhesive layer, the substrate described above is peeled off, and the semiconductor film is bonded onto the ferrite substrate 1 via an adhesive layer made of epoxy resin. It is also possible to make one with a film attached and use it to construct a Hall element.

Further, other embodiments of the Hall element of the present invention shown in FIGS. 5 to 7 are a collection of the Hall elements of the embodiment of the present invention already described with reference to FIGS. This is an example of a Hall element equipped with a magnetic body Mx for magnetic flux collection having a shape different from that of the magnetic body Mx for magnetism. For example, a ferrite chip is used, and the magnetic material Mx for magnetic flux collection is connected to the magnetic material supporting substrate described above from a portion corresponding to the central main region of the semiconductor film 3 of the predetermined pattern in the Hall element. It is configured to have a shape that extends beyond one end of Ms and occupies the part that protrudes outward.

FIG. 3 is a characteristic curve diagram showing the sensitivity characteristics of the Hall element of the present invention having the configuration shown in FIG. 1 and the conventional Hall element shown in FIG. The characteristics shown in the figure are when a voltage of 1 volt is applied between the current terminals of the Hall element having the configuration shown in the first figure, and when the surface of the semiconductor film is at an angle perpendicular to the magnetic field in a magnetic field of 500 Gauss (the third figure). The voltage values obtained at the voltage terminals at each angle during one rotation from 0 degrees in the figure are shown, and the characteristics indicated by dotted lines in Figure 3 are between the current terminals of the Hall element with the conventional configuration shown in Figure 8. At each angle during one rotation from a state where the surface of the semiconductor film is perpendicular to the magnetic field (angle 0 degrees in Figure 3) in a 500 Gauss magnetic field with a voltage of 1 volt applied to Shows the voltage value obtained at the voltage terminal.

The sensitivity characteristics of the Hall element of the present invention shown by the solid curve in FIG. 3 and the conventional Hall element shown in FIG. 8 shown by the dotted curve in FIG. 3 are shown. As is clear from a comparison with the characteristic curve diagram, in the Hall element of the present invention, the area corresponds to the main area at the center of the part of the semiconductor film 3 having a predetermined pattern that corresponds to the magnetically sensitive operating part. The area between the part and one end of the magnetic support substrate Ms is bonded with an adhesive layer 12, and the end of the above-mentioned magnetic support substrate Ms is bonded so that the end thereof protrudes outward from the end of the magnetic support substrate Ms. It has a form that occupies a portion of the semiconductor film 3 having a predetermined pattern from a portion corresponding to the main area at the center to a portion protruding outward beyond one end of the magnetic support substrate. Since the magnetic body Mx for magnetic flux collection is provided asymmetrically with respect to the center of the pattern of the semiconductor film described above, the existence of the magnetic substance Mx for magnetic flux collection provided asymmetrically increases the maximum Since the direction of sensitivity changes, even if the direction of the magnetic field to the Hall element deviates from a direction perpendicular to the semiconductor film surface of the Hall element to a direction parallel to the semiconductor film surface, the magnetic field cannot be detected. This will now be explained with reference to FIG. 4.

Figure 4 shows permanent magnets with a predetermined magnetization pattern in order to construct an ultra-thin DC brushless motor that uses a Hall element as the element that generates the timing signal for switching the armature current. FIG. 2 is a diagram illustrating a case in which the Hall element of the present invention configured as described above is applied as a Hall element disposed on the outer peripheral side of a rotor according to the present invention.

In FIG. 4, 19 is a rotor made of permanent magnets magnetized in a predetermined magnetization pattern in the circumferential direction, and 20 is a rotor made of a laminated iron plate 20a and a resin layer 20b. , resin layer 20b
It is a printed circuit board on which conductor material layers 21 and 22 of a predetermined pattern are formed, and H is a Hall element of the present invention. In FIG. 4, as in FIG. 9 described above, illustrations and explanations of parts that are not necessary for explaining the problems related to the present invention are largely omitted. In FIG. 4, 21 is a winding pattern for the frequency generator, and 22 is a wiring pattern to be connected to the external terminal of the Hall element H.

In a rotor made of permanent magnets that are magnetized in a predetermined magnetization pattern, individual magnetic poles are formed in such a manner that lines of magnetic force pass through the thickness direction (vertical direction in the figure). The Hall element H disposed on the outside of the rotor 19 is given leakage magnetic flux from the rotor 19 that is approximately parallel to the surface of the printed circuit board 20, but the Hall element H of the present invention does not As shown in FIG. 3, even in the direction parallel to the surface of the semiconductor film of the DC circuit having the configuration shown in FIG. Occur.

(Effects of the invention) As is clear from the above detailed explanation, the Hall element of the invention has a predetermined pattern formed on a magnetic support substrate that includes a main magnetic substrate. In a Hall element having a configuration in which a magnetic material for collecting magnetic flux is provided on a semiconductor film or on a protective film formed on the semiconductor film, the central part of the semiconductor film in the predetermined pattern described above is A pattern of a semiconductor film including a magnetic material for magnetic flux collection having a form that occupies a portion corresponding to the region to a portion protruding outward beyond one end of the magnetic material supporting substrate. Since the Hall element of the present invention has a considerable size in the direction parallel to the surface of the semiconductor film, as shown in FIG. Because of its sensitivity, even when the direction of the magnetic field to be detected by the Hall element is closer to the direction parallel to the surface of the printed circuit board than the direction perpendicular to the surface of the printed circuit board, the Hall effect can be easily detected. It is capable of generating voltage, and according to the present invention, even if the Hall element is manufactured by attaching the chip of the Hall element with a lead frame in the same way as in the case of manufacturing a conventional Hall element, it is possible to manufacture the Hall element without the above-mentioned method. A Hall element that does not have the problems of the conventional one can be obtained, and the Hall element of the present invention satisfactorily solves all of the conventional problems mentioned above.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of an embodiment of the Hall element of the present invention, a of FIG. 2 is a plan view of an embodiment of the Hall element of the present invention, and b of FIG. 2 is an A in a of FIG. -A vertical side view at the A line position, Figure 3 is an example of the sensitivity characteristic curve, Figures 4 and 9 are side sectional views of a schematic configuration of a part of the DC brushless motor, and Figures 5 to 7 are FIG. 8 is a perspective view of another embodiment of the Hall element of the present invention, and FIG. 8 is a perspective view of a conventional Hall element. DESCRIPTION OF SYMBOLS 1... Ferrite substrate, 2... Insulating film made of a glass thin film or silicon dioxide thin film formed on the ferrite substrate 1, 3... Semiconductor film having a predetermined pattern, 4-7... Terminal electrode, 8-
11...Terminal electrode 4 by wire bonding
Connection wire connected to ~7, 13... Ferrite chip, 12... Adhesive layer, 14-17...
External terminal, 18...External container, MS...A magnetic support substrate formed by the ferrite substrate 1 and the insulating film 2,
Mx...Magnetic material for magnetic flux collection.

Claims (1)

[Scope of utility model registration request] Magnetic material for collecting magnetic fields is placed on a semiconductor film in a predetermined pattern formed on a magnetic support substrate that includes a main magnetic substrate, or on a protective film formed on the semiconductor film. In the Hall element having a configuration in which a body is provided, a portion of the semiconductor film having the predetermined pattern described above extends beyond one end of the magnetic material supporting substrate from a portion corresponding to the main area at the center of the semiconductor film. A Hall element in which a magnetic body for collecting magnetic flux is provided asymmetrically with respect to the center of the pattern of the semiconductor film described above, and has a shape that occupies a portion that protrudes in the opposite direction.