JPH04292459A - Dielectric ceramic composition having high dielectric constant - Google Patents
Dielectric ceramic composition having high dielectric constantInfo
- Publication number
- JPH04292459A JPH04292459A JP3078461A JP7846191A JPH04292459A JP H04292459 A JPH04292459 A JP H04292459A JP 3078461 A JP3078461 A JP 3078461A JP 7846191 A JP7846191 A JP 7846191A JP H04292459 A JPH04292459 A JP H04292459A
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- Japan
- Prior art keywords
- ceramic composition
- dielectric
- capacitance
- dielectric constant
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims abstract description 40
- 239000000919 ceramic Substances 0.000 title claims abstract description 22
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 9
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 4
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 claims abstract description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910019704 Nb2O Inorganic materials 0.000 claims 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910001252 Pd alloy Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 150000001622 bismuth compounds Chemical class 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- 229910019639 Nb2 O5 Inorganic materials 0.000 description 1
- 229910017509 Nd2 O3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は高誘電率誘電体磁器組成
物に係り、特に広い温度範囲(−55℃〜+150℃)
にわたって、静電容量の変化が小さく、かつ誘電体損失
が小さい高誘電率誘電体磁器組成物に関する。[Industrial Application Field] The present invention relates to a high dielectric constant dielectric ceramic composition, particularly over a wide temperature range (-55°C to +150°C).
The present invention relates to a high dielectric constant dielectric ceramic composition that has a small change in capacitance and a small dielectric loss.
【0002】0002
【従来の技術】従来、誘電率が高く、その温度変化の小
さな誘電体磁器組成物として、チタン酸バリウム(Ba
TiO3 )にビスマス化合物、例えばBi2 O3
・2SnO2 やBi2 O3 ・2ZrO2 とTa
2 O5 やSm2 O3 等を添加して、その温度変
化率を小さくしたものが使用されている。[Prior Art] Conventionally, barium titanate (Ba
TiO3) with a bismuth compound, e.g. Bi2O3
・2SnO2 and Bi2O3 ・2ZrO2 and Ta
2 O5, Sm2 O3, etc. are added to reduce the rate of temperature change.
【0003】0003
【発明が解決しようとする課題】ところが、これらの成
分を含む組成物では誘電率を高くすると、静電容量の変
化率が大きくなり、誘電率を大きくするには、おのずと
限界があった。このためこれらの組成物をコンデンサに
使用した場合、小型で大容量を得ることは困難であった
。However, in compositions containing these components, increasing the dielectric constant increases the rate of change in capacitance, and there is a natural limit to increasing the dielectric constant. For this reason, when these compositions were used in capacitors, it was difficult to obtain large capacitance with a small size.
【0004】また前記の組成物のうち、ビスマス化合物
を含むものは焼成時にビスマス成分が蒸発し、磁器組成
物素体に屈曲を生じたりする問題点があった。Among the above-mentioned compositions, those containing a bismuth compound have the problem that the bismuth component evaporates during firing, resulting in bending of the porcelain composition body.
【0005】さらにビスマスを含有するチタン酸バリウ
ム系積層型磁器コンデンサを作成した場合、内部電極で
あるパラジウムまたは銀−パラジウム合金と誘電体の成
分であるビスマスが反応を起こし、電極としての機能を
失う。このため内部電極として高価な白金等の貴金属を
使用しなければならず、積層型磁器コンデンサのコスト
アップの要因となっていた。Furthermore, when a barium titanate multilayer ceramic capacitor containing bismuth is manufactured, the palladium or silver-palladium alloy that is the internal electrode reacts with bismuth, which is a dielectric component, and loses its function as an electrode. . For this reason, expensive noble metals such as platinum must be used for the internal electrodes, which has been a factor in increasing the cost of multilayer ceramic capacitors.
【0006】従って本発明の目的は広い温度範囲にわた
って静電容量変化が少なく、誘電体損失の小さい優れた
高誘電率磁器組成物を提供するものである。[0006] Accordingly, an object of the present invention is to provide an excellent high dielectric constant ceramic composition which exhibits little change in capacitance over a wide temperature range and low dielectric loss.
【0007】[0007]
【課題を解決するための手段】前期目的を達成するため
、本発明者は鋭意研究の結果、主成分として、BaTi
O3 :94.0〜99.0モル%Nb2 O5
: 0.5〜 3.0モル%CoO : 0
.5〜 3.0モル%に対して、添加物としてSrZr
O3 を0.2 〜7.0 重量%含有することにより
キュリー点が高温側にシフトすることを見出した。これ
により、静電容量の温度変化が少ない領域が拡がる。[Means for Solving the Problems] In order to achieve the above object, the inventors of the present invention have conducted extensive research and found that BaTi is the main component.
O3: 94.0 to 99.0 mol% Nb2 O5
: 0.5 to 3.0 mol% CoO : 0
.. 5 to 3.0 mol%, SrZr as an additive
It has been found that the Curie point shifts to the high temperature side by containing 0.2 to 7.0% by weight of O3. This expands the area where the capacitance changes little with temperature.
【0008】また必要に応じてNd2 O3 を0.5
重量%以下含有することにより特性が優れることを見
出した。[0008] Also, if necessary, add 0.5 Nd2 O3.
It has been found that the properties are excellent when the content is less than % by weight.
【0009】さらに、これらにMnOを0〜0.3 重
量%添加することにより焼結性が良くなり、特性が一層
向上することも見出した。Furthermore, it has been found that by adding 0 to 0.3% by weight of MnO to these materials, the sinterability is improved and the properties are further improved.
【0010】0010
【作用】本発明の組成の誘電体磁器組成物を用いること
によって、常温での比誘電率が2000〜4700とい
う高い値を示し、誘電体損失(tanδ)は1.2 %
以下という小さい値であり、静電容量の温度変化はEI
AJ(日本電子機械工業会規約)に規定する×7R特性
(−55℃〜+125℃の温度範囲で静電容量の変化が
25℃を基準にして±15%以内)を満足し、さらに×
8R特性(−55℃〜+150℃の温度範囲で静電容量
の変化が25℃を基準にして±15%以内)を満足する
すぐれた特性の高誘電率誘電体磁器組成物を得ることが
できた。[Function] By using the dielectric ceramic composition of the present invention, the dielectric constant at room temperature shows a high value of 2000 to 4700, and the dielectric loss (tan δ) is 1.2%.
It is a small value of less than EI, and the temperature change in capacitance is EI
It satisfies the ×7R characteristic (change in capacitance within ±15% with respect to 25°C in the temperature range of -55°C to +125°C) stipulated by AJ (Japan Electronics Industry Association regulations), and also ×
It is possible to obtain a high dielectric constant dielectric ceramic composition with excellent characteristics that satisfies the 8R characteristics (change in capacitance within ±15% with respect to 25°C in the temperature range of -55°C to +150°C). Ta.
【0011】[0011]
【実施例】本発明の一実施例を図1〜図3を参照しつつ
説明する。図1は本発明の誘電体磁器組成物の主成分の
三元組成図、図2は誘電体磁器組成物の製造工程図、図
3は静電容量の温度特性カーブを示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a ternary composition diagram of the main components of the dielectric ceramic composition of the present invention, FIG. 2 is a manufacturing process diagram of the dielectric ceramic composition, and FIG. 3 is a temperature characteristic curve of capacitance.
【0012】チタン酸バリウムの出発原料として高純度
のBaCO3 とTiO2 を1:1のモル比で調合し
、調合した出発原料を脱水・乾燥する(図2■参照)。Highly purified BaCO3 and TiO2 are prepared in a molar ratio of 1:1 as starting materials for barium titanate, and the prepared starting materials are dehydrated and dried (see FIG. 2).
【0013】次にこれらの原料を仮成形し、1000〜
1200℃で2時間安定にして化学反応を行わしめ、B
aTiO3 を形成する仮焼成を行う。得られたBaT
iO3 を例えばアトマイザー等で微粉砕する(図2■
参照)。[0013] Next, these raw materials are temporarily formed and
Stabilize at 1200°C for 2 hours to carry out a chemical reaction, and
Temporary firing is performed to form aTiO3. Obtained BaT
Finely pulverize iO3 using an atomizer, etc. (Figure 2)
reference).
【0014】このようにして得られたBaTiO3 粉
末、または溶液法にて調整して得られたBaTiO3
粉末、Nb2 O5 ,CoO,SrZrO3 ,Nd
2 O3 , MnOを、焼成後の組成が表1の如くに
なるように秤量する(図2■参照)。BaTiO3 powder thus obtained or BaTiO3 prepared by solution method
Powder, Nb2O5, CoO, SrZrO3, Nd
2 O3 and MnO are weighed so that the composition after firing is as shown in Table 1 (see Figure 2).
【0015】[0015]
【表1】[Table 1]
【0016】秤量した原料粉末を湿式混合した後、脱水
・乾燥する(図2■参照)。[0016] After the weighed raw material powders are wet-mixed, they are dehydrated and dried (see Figure 2).
【0017】これに有機バインダを適当量加え、約3t
on/cm2 の成形圧力で成形し、直径16.5mm
, 厚さ約0.6mm の円板状成形物を作成する。次
にこの成形物を1260℃〜1380℃で2時間安定に
して本焼成を行う(図2■参照)。[0017] Add an appropriate amount of organic binder to this, and make about 3 tons.
Molded at a molding pressure of on/cm2, diameter 16.5mm
, A disc-shaped molded product with a thickness of approximately 0.6 mm is created. Next, this molded product is stabilized at 1260° C. to 1380° C. for 2 hours and subjected to main firing (see FIG. 2).
【0018】得られた磁器組成物素体の両端面に銀電極
を焼きつけてコンデンサとする(図2■参照)。Silver electrodes are baked on both end faces of the obtained ceramic composition element to form a capacitor (see FIG. 2).
【0019】これらのコンデンサの各電気的特性、即ち
比誘電率(εs )、誘電体損失(tanδ)、絶縁抵
抗、静電容量の温度変化率をそれぞれ測定した。なお、
比誘電率、誘電体損失は、周波数1KHZ ,1V、室
温20℃の条件、絶縁抵抗は、DC,500V、室温2
0℃、1分後の条件での測定値を求め、静電容量の温度
変化率は、25℃における値に対する−55℃、+12
5℃、+150℃における値の変化率を求めている(図
2■参照)。Each of the electrical properties of these capacitors, ie, relative dielectric constant (εs), dielectric loss (tan δ), insulation resistance, and rate of change in capacitance with temperature, was measured. In addition,
The relative permittivity and dielectric loss are at a frequency of 1KHz, 1V, and a room temperature of 20°C.Insulation resistance is a DC, 500V, and a room temperature of 2
The measured value was obtained after 1 minute at 0°C, and the temperature change rate of capacitance was -55°C and +12 compared to the value at 25°C.
The rate of change in value at 5°C and +150°C is calculated (see Figure 2 ■).
【0020】各測定結果等を表1,表2に示す。The results of each measurement are shown in Tables 1 and 2.
【0021】[0021]
【表2】[Table 2]
【0022】ここで表1と表2の試料Noは共通であり
、同一の番号は同一の試料を示し、表1は各試料の組成
、表2は対応する試料の電気的特性等を示す。Here, the sample numbers in Tables 1 and 2 are the same; the same numbers indicate the same samples, Table 1 shows the composition of each sample, and Table 2 shows the electrical characteristics of the corresponding samples.
【0023】また、表1、表2において、×印を付した
試料No1,3−3,3−4,3−8,3−12,6,
8,10は本発明の範囲外であり、本発明の実施例との
比較のために示している。[0023] In addition, in Tables 1 and 2, sample Nos. 1, 3-3, 3-4, 3-8, 3-12, 6, and
8 and 10 are outside the scope of the present invention and are shown for comparison with examples of the present invention.
【0024】表1、表2から明らかな如く、本発明の誘
電体磁器組成物は常温での比誘電率が2000〜470
0と高い値を示し、誘電体損失は1.2 %以下という
小さい値であり、その静電容量の温度変化率はEIAJ
に規定する×7R特性、×8R特性を満足する。As is clear from Tables 1 and 2, the dielectric ceramic composition of the present invention has a dielectric constant of 2000 to 470 at room temperature.
0, the dielectric loss is a small value of 1.2% or less, and the temperature change rate of the capacitance is EIAJ.
Satisfies the ×7R characteristics and ×8R characteristics specified in .
【0025】図1は、本発明の誘電体磁器組成物の主成
分の組成を示す三元組成図であって、図1中の各点の番
号は表1、表2の試料Noと共通である。FIG. 1 is a ternary composition diagram showing the composition of the main components of the dielectric ceramic composition of the present invention, and the numbers of each point in FIG. 1 are the same as the sample numbers in Tables 1 and 2. be.
【0026】図1から、本発明の主成分は、点2,7,
5,9を結ぶ四辺形の内側の組成になることが明らかで
ある。From FIG. 1, the main components of the present invention are points 2, 7,
It is clear that the composition will be inside the quadrilateral connecting 5 and 9.
【0027】図3は表1、表2の各試料のうちの3つの
試料について、その静電容量の温度特性カーブを示す。FIG. 3 shows the capacitance temperature characteristic curves of three of the samples in Tables 1 and 2.
【0028】図3において、曲線Aは表1、表2の試料
No1に対応し、曲線A上の各点(Δ)は表1、表2の
静電容量の各温度における変化率に対応する。同様に、
点(・)を含む曲線Bは表1、表2における試料No3
−1、点(×)を含む曲線Cは表1、表2における試料
No3−3に対応する。In FIG. 3, curve A corresponds to sample No. 1 in Tables 1 and 2, and each point (Δ) on curve A corresponds to the rate of change of capacitance at each temperature in Tables 1 and 2. . Similarly,
Curve B including the point (・) is sample No. 3 in Tables 1 and 2.
Curve C including -1 and point (x) corresponds to sample No. 3-3 in Tables 1 and 2.
【0029】図3から明らかな如く、本発明の範囲の組
成の磁器組成物(曲線B、即ち試料No3−1)は静電
容量の温度変化率が広い温度範囲(−55℃〜+150
℃)で±15%以下と小さく、安定している。As is clear from FIG. 3, the porcelain composition having a composition within the range of the present invention (curve B, ie, sample No. 3-1) has a temperature change rate of capacitance over a wide temperature range (-55°C to +150°C).
°C), it is small and stable at less than ±15%.
【0030】次に、本発明の誘電体磁器組成物の組成範
囲の限定理由を説明する。BaTiO3 が94.00
モル%未満であると、比誘電率は2000以下と低く
なる(例えば、表1、表2の試料No6参照)。Next, the reason for limiting the composition range of the dielectric ceramic composition of the present invention will be explained. BaTiO3 is 94.00
If it is less than mol %, the dielectric constant will be as low as 2000 or less (see, for example, sample No. 6 in Tables 1 and 2).
【0031】BaTiO3 が99.0モル%を越える
と、誘電体損失が1.2 %を越えて大きくなり、静電
容量の温度変化率も大きくなる上、焼結性も悪化する(
例えば、表1、表2と図3の試料No1参照)。[0031] When BaTiO3 exceeds 99.0 mol%, the dielectric loss increases beyond 1.2%, the temperature change rate of capacitance increases, and the sinterability deteriorates (
For example, see Tables 1 and 2 and sample No. 1 in FIG. 3).
【0032】またNb2 O5 が0.50モル%未満
であると、誘電体損失が、1.2 %を越えて大きくな
り、静電容量の温度変化率も大きくなる上、焼結性も悪
化する(例えば、表1、表2と図3の試料No1参照)
。[0032] Furthermore, if Nb2O5 is less than 0.50 mol%, the dielectric loss increases beyond 1.2%, the temperature change rate of capacitance also increases, and sinterability deteriorates. (For example, see Table 1, Table 2 and sample No. 1 in Figure 3)
.
【0033】Nb2 O5 が3.0 モル%を越える
と、比誘電率が低くなったり(例えば表1、表2の試料
No6参照)、静電容量の温度変化率が大きくなる(例
えば、表1、表2の試料No8参照)。[0033] When Nb2O5 exceeds 3.0 mol%, the dielectric constant becomes low (see, for example, sample No. 6 in Tables 1 and 2), and the temperature change rate of capacitance becomes large (for example, as shown in Table 1). , see sample No. 8 in Table 2).
【0034】さらにCoOが0.5 モル%未満である
と、誘電体損失が1.2 %を越えて大きくなり、静電
容量の温度変化率も大きくなる上、焼結性も悪化する(
例えば、表1、表2と図3の試料No1参照)。Furthermore, if the CoO content is less than 0.5 mol %, the dielectric loss will increase to more than 1.2 %, the temperature change rate of capacitance will increase, and the sinterability will deteriorate (
For example, see Tables 1 and 2 and sample No. 1 in FIG. 3).
【0035】CoOが3.0 モル%を越えると、比誘
電率が2000以下と低くなったり(例えば、表1、表
2の試料No6参照)、静電容量の温度変化率が大きく
なったりする(例えば、表1、表2の試料No10参照
)。[0035] When CoO exceeds 3.0 mol%, the dielectric constant becomes as low as 2000 or less (see, for example, sample No. 6 in Tables 1 and 2), and the temperature change rate of capacitance becomes large. (For example, see sample No. 10 in Tables 1 and 2).
【0036】また、添加物のBaZrO3 が0.2
重量%未満では、静電容量の温度変化率が大きくなり、
×8R特性を満足しなくなる(例えば、表1、表2の試
料No3−4参照)。[0036] Also, the additive BaZrO3 is 0.2
If it is less than % by weight, the rate of change in capacitance with temperature becomes large;
×8R characteristics are no longer satisfied (for example, see sample No. 3-4 in Tables 1 and 2).
【0037】SrZrO3 が7.0 重量%を越える
と、静電容量の温度変化率が大きくなり、×8R特性を
満足しなくなる(例えば、表1、表2の試料No3−8
参照)。[0037] When SrZrO3 exceeds 7.0% by weight, the temperature change rate of capacitance becomes large and the x8R characteristic is no longer satisfied (for example, sample No. 3-8 in Tables 1 and 2
reference).
【0038】またNd2 O3 が上記組成に対して、
無添加でも使用上問題はないが(例えば、表1、表2の
試料No3参照)、0.5 重量%までの添加で焼結性
が良くなる(例えば表1、表2の試料No3−1,3−
2参照)。[0038] Furthermore, with respect to the above composition, Nd2O3
Although there is no problem in use without the addition (for example, see sample No. 3 in Tables 1 and 2), the sinterability improves with addition of up to 0.5% by weight (for example, sample No. 3-1 in Tables 1 and 2). ,3-
(see 2).
【0039】しかし、Nd2 O3 が0.5 重量%
を越えると、静電容量の温度変化率が大きくなり、×8
R特性を満足しなくなる(例えば、表1、表2と図3の
試料No3−3参照)。However, if Nd2O3 is 0.5% by weight
If it exceeds , the temperature change rate of capacitance increases and
The R characteristic is no longer satisfied (for example, see Table 1, Table 2, and sample No. 3-3 in FIG. 3).
【0040】MnOの添加は無添加でも、使用上問題は
ないが(例えば、表1、表2の試料No3−9参照)、
0.3 重量%までの添加で還元防止になり、誘電体損
失が改善され、焼結性も向上する(例えば、表1、表2
の3−10,3−11参照)。[0040] Even if MnO is not added, there is no problem in use (see, for example, sample No. 3-9 in Tables 1 and 2).
Addition of up to 0.3% by weight prevents reduction, improves dielectric loss, and improves sinterability (for example, Table 1, Table 2).
(See 3-10, 3-11).
【0041】MnOの添加量が0.3 重量%を越える
と、静電容量の温度変化率が大きくなり、焼結性は悪化
し、緻密な磁器が得られなくなる(例えば、表1、表2
の試料No3−12参照)。When the amount of MnO added exceeds 0.3% by weight, the temperature change rate of capacitance becomes large, sinterability deteriorates, and dense porcelain cannot be obtained (for example, Table 1, Table 2
(See sample No. 3-12).
【0042】なお原料中に含まれるアルカリ金属酸化物
または製造工程より混入する微量の不純物としてのSi
O2 ,Al2 O3 は特性を著しく悪化させること
はない。[0042] Furthermore, Si as an alkali metal oxide contained in the raw material or a trace amount of impurity mixed in during the manufacturing process.
O2 and Al2 O3 do not significantly deteriorate the characteristics.
【0043】[0043]
【発明の効果】本発明の誘電体磁器組成物は、比誘電率
が約2000〜4700という高い値を有し、誘電体損
失は1.2 %以下であり、静電容量の温度変化率はE
IAJで規定する×7R特性を満足するばかりでなく、
×8R特性も満足するすぐれた特性を有し、例えば自動
車のエンジンルーム等に使用可能な優れた高誘電率誘電
体磁器組成物を得ることができる。Effects of the Invention The dielectric ceramic composition of the present invention has a high dielectric constant of approximately 2000 to 4700, a dielectric loss of 1.2% or less, and a temperature change rate of capacitance of E
Not only does it satisfy the ×7R characteristics specified by IAJ,
It is possible to obtain an excellent dielectric ceramic composition with a high dielectric constant, which has excellent characteristics satisfying the x8R characteristic and can be used, for example, in the engine room of an automobile.
【0044】さらに、この誘電体磁器組成物中にパラジ
ウムまたは銀−パラジウム合金と反応し易いビスマスを
含有しないため、この組成物を誘電体層として積層コン
デンサを製造する場合、内部電極としてパラジウム単独
または銀−パラジウム合金の使用が可能となる。Furthermore, since this dielectric ceramic composition does not contain bismuth, which easily reacts with palladium or silver-palladium alloy, when manufacturing a multilayer capacitor using this composition as a dielectric layer, palladium alone or palladium may be used as the internal electrode. It becomes possible to use silver-palladium alloys.
【0045】従って、高価な白金または白金パラジウム
を用いる必要がなくなり、製品の大幅なコストダウンが
実現でき、工業上の利益ははかりしれないものがある。[0045] Therefore, there is no need to use expensive platinum or platinum-palladium, and a significant reduction in the cost of the product can be achieved, resulting in immeasurable industrial benefits.
【図1】本発明の誘電体磁器組成物の主成分三元組成図
である。FIG. 1 is a ternary composition diagram of the main components of the dielectric ceramic composition of the present invention.
【図2】本発明の実施例の製造工程説明図である。FIG. 2 is an explanatory diagram of the manufacturing process of an embodiment of the present invention.
【図3】各試料の静電容量の温度特性カーブである。FIG. 3 is a temperature characteristic curve of capacitance of each sample.
Claims (3)
5 : 0.5〜 3.0モル%CoO
: 0.5〜 3.0モル%に対して、添加物として
、SrZrO3 を0.2 〜7.0 重量%含有して
なることを特徴とする高誘電率誘電体磁器組成物。Claim 1: BaTiO3 as main component: 94.0 to 99.0 mol% Nb2O
5: 0.5-3.0 mol%CoO
: A high dielectric constant dielectric ceramic composition containing 0.2 to 7.0% by weight of SrZrO3 as an additive with respect to 0.5 to 3.0 mol%.
重量%以下含有することを特徴とする請求項1記載の
高誘電率誘電体磁器組成物。2. Adding 0.5 of Nd2O3 to the composition
2. The high dielectric constant dielectric ceramic composition according to claim 1, wherein the dielectric ceramic composition contains not more than % by weight.
以下含有することを特徴とする請求項1又は請求項2記
載の高誘電率誘電体磁器組成物。3. 0.3% by weight of MnO in the composition
The high dielectric constant dielectric ceramic composition according to claim 1 or 2, characterized in that it contains the following:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3078461A JPH04292459A (en) | 1991-03-18 | 1991-03-18 | Dielectric ceramic composition having high dielectric constant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3078461A JPH04292459A (en) | 1991-03-18 | 1991-03-18 | Dielectric ceramic composition having high dielectric constant |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04292459A true JPH04292459A (en) | 1992-10-16 |
Family
ID=13662667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3078461A Withdrawn JPH04292459A (en) | 1991-03-18 | 1991-03-18 | Dielectric ceramic composition having high dielectric constant |
Country Status (1)
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JP (1) | JPH04292459A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990029A (en) * | 1997-02-25 | 1999-11-23 | Tdk Corporation | High dielectric-constant dielectric ceramic composition, and its fabrication process |
US6226172B1 (en) | 1998-07-29 | 2001-05-01 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6403513B1 (en) | 1999-07-27 | 2002-06-11 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6544916B1 (en) | 1999-10-05 | 2003-04-08 | Tdk Corporation | Manufacture method of dielectric ceramic composition |
US6559084B1 (en) | 1999-07-21 | 2003-05-06 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6764976B2 (en) | 2000-12-25 | 2004-07-20 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US7262146B2 (en) | 2004-08-30 | 2007-08-28 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US7381464B2 (en) | 2004-11-30 | 2008-06-03 | Tdk Corporation | Dielectric ceramic composition and electronic device |
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-
1991
- 1991-03-18 JP JP3078461A patent/JPH04292459A/en not_active Withdrawn
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990029A (en) * | 1997-02-25 | 1999-11-23 | Tdk Corporation | High dielectric-constant dielectric ceramic composition, and its fabrication process |
US6226172B1 (en) | 1998-07-29 | 2001-05-01 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6559084B1 (en) | 1999-07-21 | 2003-05-06 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6699809B2 (en) | 1999-07-21 | 2004-03-02 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6403513B1 (en) | 1999-07-27 | 2002-06-11 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US6544916B1 (en) | 1999-10-05 | 2003-04-08 | Tdk Corporation | Manufacture method of dielectric ceramic composition |
US6764976B2 (en) | 2000-12-25 | 2004-07-20 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US7262146B2 (en) | 2004-08-30 | 2007-08-28 | Tdk Corporation | Dielectric ceramic composition and electronic device |
EP1916681A1 (en) | 2004-08-30 | 2008-04-30 | TDK Corporation | Dielectric ceramic composition and electronic device |
US7541305B2 (en) | 2004-08-30 | 2009-06-02 | Tdk Corporation | Dielectric ceramic composition and electronic device |
US7381464B2 (en) | 2004-11-30 | 2008-06-03 | Tdk Corporation | Dielectric ceramic composition and electronic device |
EP2003665A1 (en) | 2004-11-30 | 2008-12-17 | TDK Corporation | Dielectric ceramic composition with Core-Shell particles and electronic device |
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