JPH0428680B2 - - Google Patents

Info

Publication number
JPH0428680B2
JPH0428680B2 JP62502091A JP50209187A JPH0428680B2 JP H0428680 B2 JPH0428680 B2 JP H0428680B2 JP 62502091 A JP62502091 A JP 62502091A JP 50209187 A JP50209187 A JP 50209187A JP H0428680 B2 JPH0428680 B2 JP H0428680B2
Authority
JP
Japan
Prior art keywords
tellurium
substrate
cadmium
source
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62502091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63503379A (ja
Inventor
Roorensu Esu Richiman
Jeemusu Dei Paasonsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS63503379A publication Critical patent/JPS63503379A/ja
Publication of JPH0428680B2 publication Critical patent/JPH0428680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02398—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H10P14/2912—
    • H10P14/2917—
    • H10P14/3432—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62502091A 1986-04-11 1987-02-24 テルルを含む物質の蒸着方法 Granted JPS63503379A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US851,004 1986-04-11
US06/851,004 US4828938A (en) 1986-04-11 1986-04-11 Method for depositing materials containing tellurium and product

Publications (2)

Publication Number Publication Date
JPS63503379A JPS63503379A (ja) 1988-12-08
JPH0428680B2 true JPH0428680B2 (show.php) 1992-05-14

Family

ID=25309699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62502091A Granted JPS63503379A (ja) 1986-04-11 1987-02-24 テルルを含む物質の蒸着方法

Country Status (6)

Country Link
US (1) US4828938A (show.php)
EP (1) EP0263141B1 (show.php)
JP (1) JPS63503379A (show.php)
DE (1) DE3774235D1 (show.php)
IL (1) IL81722A0 (show.php)
WO (1) WO1987006275A1 (show.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US5312983A (en) * 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
JP3263964B2 (ja) * 1992-01-31 2002-03-11 富士通株式会社 半導体装置形成用結晶とその製造方法
US8377341B2 (en) * 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
CN119220953A (zh) * 2024-10-09 2024-12-31 河北工业大学 一种常压化学气相沉积法生长多层及单层二碲化钨薄膜的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932592A (en) * 1953-06-22 1960-04-12 Angus E Cameron Method for producing thin films and articles containing same
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3825439A (en) * 1972-08-16 1974-07-23 Corning Glass Works Method for forming amorphous semiconductors
JPS5052927A (show.php) * 1973-09-10 1975-05-10
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
JPS528799A (en) * 1975-07-10 1977-01-22 Mitsubishi Electric Corp Traffic light system
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
US4445965A (en) * 1980-12-01 1984-05-01 Carnegie-Mellon University Method for making thin film cadmium telluride and related semiconductors for solar cells
SU1001234A1 (ru) * 1981-06-19 1983-02-28 Институт химии АН СССР Способ осаждени слоев полупроводниковых соединений типа А @ В @ из газовой фазы
EP0106537B1 (en) * 1982-10-19 1989-01-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Organometallic chemical vapour deposition of films
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4920068A (en) * 1986-04-02 1990-04-24 American Cyanamid Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Also Published As

Publication number Publication date
US4828938A (en) 1989-05-09
EP0263141A1 (en) 1988-04-13
JPS63503379A (ja) 1988-12-08
IL81722A0 (en) 1987-10-20
WO1987006275A1 (en) 1987-10-22
EP0263141B1 (en) 1991-10-30
DE3774235D1 (de) 1991-12-05

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