DE3774235D1 - Niederschlagsverfahren von tellur enthaltenden stoffen. - Google Patents

Niederschlagsverfahren von tellur enthaltenden stoffen.

Info

Publication number
DE3774235D1
DE3774235D1 DE8787902200T DE3774235T DE3774235D1 DE 3774235 D1 DE3774235 D1 DE 3774235D1 DE 8787902200 T DE8787902200 T DE 8787902200T DE 3774235 T DE3774235 T DE 3774235T DE 3774235 D1 DE3774235 D1 DE 3774235D1
Authority
DE
Germany
Prior art keywords
tellur
deposition method
containing substances
substances
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787902200T
Other languages
English (en)
Inventor
S Lichtmann
D Parsons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3774235D1 publication Critical patent/DE3774235D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02398—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE8787902200T 1986-04-11 1987-02-24 Niederschlagsverfahren von tellur enthaltenden stoffen. Expired - Fee Related DE3774235D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/851,004 US4828938A (en) 1986-04-11 1986-04-11 Method for depositing materials containing tellurium and product
PCT/US1987/000357 WO1987006275A1 (en) 1986-04-11 1987-02-24 Method for depositing materials containing tellurium

Publications (1)

Publication Number Publication Date
DE3774235D1 true DE3774235D1 (de) 1991-12-05

Family

ID=25309699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787902200T Expired - Fee Related DE3774235D1 (de) 1986-04-11 1987-02-24 Niederschlagsverfahren von tellur enthaltenden stoffen.

Country Status (6)

Country Link
US (1) US4828938A (de)
EP (1) EP0263141B1 (de)
JP (1) JPS63503379A (de)
DE (1) DE3774235D1 (de)
IL (1) IL81722A0 (de)
WO (1) WO1987006275A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US5312983A (en) * 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
JP3263964B2 (ja) * 1992-01-31 2002-03-11 富士通株式会社 半導体装置形成用結晶とその製造方法
US8377341B2 (en) * 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932592A (en) * 1953-06-22 1960-04-12 Angus E Cameron Method for producing thin films and articles containing same
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3825439A (en) * 1972-08-16 1974-07-23 Corning Glass Works Method for forming amorphous semiconductors
JPS5052927A (de) * 1973-09-10 1975-05-10
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
JPS528799A (en) * 1975-07-10 1977-01-22 Mitsubishi Electric Corp Traffic light system
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
EP0040939B1 (de) * 1980-05-27 1985-01-02 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Herstellung von Cadmium-Quecksilber-Telluriden
US4445965A (en) * 1980-12-01 1984-05-01 Carnegie-Mellon University Method for making thin film cadmium telluride and related semiconductors for solar cells
SU1001234A1 (ru) * 1981-06-19 1983-02-28 Институт химии АН СССР Способ осаждени слоев полупроводниковых соединений типа А @ В @ из газовой фазы
DE3379059D1 (en) * 1982-10-19 1989-03-02 Secr Defence Brit Organometallic chemical vapour deposition of films
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4920068A (en) * 1986-04-02 1990-04-24 American Cyanamid Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Also Published As

Publication number Publication date
JPH0428680B2 (de) 1992-05-14
EP0263141B1 (de) 1991-10-30
WO1987006275A1 (en) 1987-10-22
IL81722A0 (en) 1987-10-20
EP0263141A1 (de) 1988-04-13
JPS63503379A (ja) 1988-12-08
US4828938A (en) 1989-05-09

Similar Documents

Publication Publication Date Title
DK84488D0 (da) Overtraeksmetode
DE3783802D1 (de) Laufflaeche von luftreifen.
DE3786794D1 (de) Verahren zur vermehrung von knollen.
DE3853386D1 (de) Enantioselektive Reduktion von Ketonen.
FI865255A0 (fi) Kontinuerlig process foer behandling av en kolvaetechargestroem innehaollande merkaptaner.
FI872108A (fi) Process foer rening av avfallsvatten.
DE3765446D1 (de) Uebertragungsmaterial von musterungen.
DE3786928D1 (de) Verpackung von schleifmitteln.
ATE112172T1 (de) Targetformer von antitumor-methyltrithioagenzien.
DE3669543D1 (de) Ablagern von titanaluminiden.
NO870594D0 (no) Tinnholdige antigromalinger.
DE3670956D1 (de) Behandlung von fluessigkeiten.
NO870409L (no) Fremgangsmaate for spaltning av 1-aminoindaner.
DE3787102D1 (de) Extraktion von Probesubstanzen.
DE3685258D1 (de) Verwendung von pflanzenprotoplasten.
FI865084A (fi) Foerfarande foer rening av roekgaser.
DE3763363D1 (de) Anreicherung von fluechtigen verbindungen.
DE3761048D1 (de) Umsetzungsprodukte von bis-glycidylthioethern.
NO870829L (no) Immortalisering av primŸrceller.
DE3774235D1 (de) Niederschlagsverfahren von tellur enthaltenden stoffen.
DE3761377D1 (de) Verfahren zur aufarbeitung von 2-merkaptobenzthiazol enthaltenden teeren.
DE3782702D1 (de) Vorlaeufer von antihypercholesterinaemischen verbindungen.
DE3680129D1 (de) Beschichtungsverfahren.
DE3678122D1 (de) Herstellungsverfahren von diisopropylcarbinol.
FI863883A0 (fi) Anordning foer tillslutning av flaskhals.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee